JPH087757A - Manufacture of cathode-ray tube - Google Patents
Manufacture of cathode-ray tubeInfo
- Publication number
- JPH087757A JPH087757A JP6134031A JP13403194A JPH087757A JP H087757 A JPH087757 A JP H087757A JP 6134031 A JP6134031 A JP 6134031A JP 13403194 A JP13403194 A JP 13403194A JP H087757 A JPH087757 A JP H087757A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- ray tube
- conductive
- cathode ray
- conductive thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
- H01J9/205—Applying optical coatings or shielding coatings to the vessel of flat panel displays, e.g. applying filter layers, electromagnetic interference shielding layers, anti-reflection coatings or anti-glare coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
- H01J9/22—Applying luminescent coatings
- H01J9/227—Applying luminescent coatings with luminescent material discontinuously arranged, e.g. in dots or lines
- H01J9/2278—Application of light absorbing material, e.g. between the luminescent areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2209/00—Apparatus and processes for manufacture of discharge tubes
- H01J2209/01—Generalised techniques
- H01J2209/012—Coating
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
- Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は陰極線管の製造方法に関
し、更に詳細には、陰極線管のフェースパネルの表面に
導電性反射防止膜を形成する陰極線管の製造方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a cathode ray tube, and more particularly to a method of manufacturing a cathode ray tube in which a conductive antireflection film is formed on the surface of a face panel of the cathode ray tube.
【０００２】[0002]
【従来の技術】陰極線管は作動時に数十ＫＶの高電圧が
印加されるため、フェースパネルの表面が静電気を帯び
易く、人体が触れた場合に衝撃を与えたり、塵埃が吸着
堆積して画面が見にくくなる等の問題があった。2. Description of the Related Art Since a high voltage of several tens of KV is applied to a cathode ray tube during operation, the surface of the face panel is likely to be charged with static electricity, which gives a shock when touched by a human body or dust is adsorbed and deposited on the screen. There was a problem that it became difficult to see.
【０００３】これらの問題を解決するため、スピンコー
ティング法、スプレー法やディップコーティング法を利
用してフェースパネルの表面に導電性膜を形成する方法
が提案されている（例えば、特開昭５４−１２５５０
号、特開昭６１−１１８９４６号、特開昭６３−１２４
３３１号、特開昭６４−３５８３５号、特開平３−４３
９４２号公報など）。In order to solve these problems, a method of forming a conductive film on the surface of the face panel by using a spin coating method, a spray method or a dip coating method has been proposed (for example, Japanese Patent Laid-Open No. 54-54). 12550
JP-A-61-118946, JP-A-63-124
331, JP-A-64-35835, and JP-A-3-43.
942 publication).
【０００４】例えば、特開平３−４３９４２号公報に
は、シリカゾル溶液に、アンチモンをドープした酸化す
ずの微粒子を分散させ、更に金属硝酸塩または金属硫酸
塩の１種又は２種以上を添加した液を塗布、焼成するこ
とによって、陰極線管のフェースパネル面に導電性膜を
形成することが記載されている。For example, in Japanese Patent Laid-Open No. 3-43942, antimony-doped tin oxide fine particles are dispersed in a silica sol solution, and a solution containing one or more metal nitrates or metal sulfates is further applied. It is described that a conductive film is formed on the face panel surface of the cathode ray tube by firing.
【０００５】また、特開昭６４−３５８３５号公報に
は、スプレー法によりシリカ形成剤と酸化インジウムを
少なくとも含む膜を陰極線管のフェースパネル面に凹凸
に形成し、反射光を散乱し、同時に導電性を得ることが
記載されている。Further, in Japanese Patent Application Laid-Open No. 64-35835, a film containing at least a silica forming agent and indium oxide is formed on a face panel surface of a cathode ray tube in a concavo-convex manner by a spray method to scatter reflected light and simultaneously conduct electricity. It is described to obtain sex.
【０００６】一方、図３は二層膜をスピンコーティング
方式とＣＶＤ法を併用して導電性反射防止膜を形成する
要領を例示的に説明するものであって、まず、フェース
パネル１Ａの表面にＣＶＤ法によって酸化すず〔ＳｎＯ
2 〕を主成分とする導電性薄膜１０Ａを形成した後、陰
極線管１の内部に電子銃を組み込み、陰極線管１の内部
を真空にする。次にモータ４によって回転駆動される治
具３上に、陰極線管１を取り付け、ノズル２からフェー
スパネル１Ａの表面にシリケートの加水分解物をエチル
アルコール等の有機溶剤で希釈した薄膜形成用原料液９
を塗布し、回転により発生する遠心力を利用して上記原
料液９をフェースパネル１Ａの表面全域に展延させ、そ
の後、焼成炉（図示省略）中に導入し、比較的高温の焼
成温度、例えば２５０℃の温度で焼成処理することによ
り原料液９を硬化させて低屈折率薄膜１０Ｂを形成す
る。これによって酸化すず〔ＳｎＯ2 〕からなる導電性
薄膜１０Ａとシリケートの加水分解物からなる低屈折率
薄膜１０Ｂとで構成され、導電性薄膜１０Ａと低屈折率
薄膜１０Ｂとの屈折率の差により反射光を干渉させるこ
とを利用した導電性反射防止膜１０が形成される。On the other hand, FIG. 3 exemplifies a procedure for forming a conductive antireflection film by using a spin coating method and a CVD method in combination with a two-layer film. First, on the surface of the face panel 1A. Tin oxide by the CVD method [SnO
2 ] is formed as a main component, and then an electron gun is incorporated into the cathode ray tube 1 to evacuate the inside of the cathode ray tube 1. Next, the cathode ray tube 1 is mounted on the jig 3 which is rotationally driven by the motor 4, and the raw material liquid for thin film formation in which the hydrolyzate of silicate is diluted with an organic solvent such as ethyl alcohol from the nozzle 2 to the surface of the face panel 1A. 9
Is applied, and the raw material liquid 9 is spread over the entire surface of the face panel 1A by utilizing the centrifugal force generated by the rotation, and then introduced into a baking furnace (not shown) to set a relatively high baking temperature, For example, the low-refractive-index thin film 10B is formed by curing the raw material liquid 9 by baking at a temperature of 250 ° C. As a result, the conductive thin film 10A made of tin oxide [SnO 2 ] and the low-refractive index thin film 10B made of a hydrolyzate of silicate are reflected, and reflected by the difference in refractive index between the conductive thin film 10A and the low-refractive index thin film 10B. The conductive antireflection film 10 utilizing the interference of light is formed.
【０００７】[0007]
【発明が解決しようとする課題】フェースパネル１Ａ面
に低屈折率薄膜１０Ｂを形成した陰極線管１を焼成炉中
に導入し、膜硬化のための焼成処理を施こす場合、焼成
温度を高めると低屈折率薄膜１０Ｂの接着強度は向上す
る。しかしながら、内部が真空である陰極線管１を高温
に加熱すると陰極線管１の内壁に吸着していたガスが放
出されて電子銃に付着し、その電子放出特性を悪化させ
てしまうので、２５０℃を超える温度に加熱できない。When the cathode ray tube 1 having the low-refractive index thin film 10B formed on the face panel 1A is introduced into a firing furnace and subjected to a firing treatment for film hardening, the firing temperature is raised. The adhesive strength of the low refractive index thin film 10B is improved. However, when the cathode ray tube 1 having a vacuum inside is heated to a high temperature, the gas adsorbed on the inner wall of the cathode ray tube 1 is released and adheres to the electron gun, deteriorating its electron emission characteristics. It cannot be heated to over temperature.
【０００８】低屈折率薄膜１０Ｂの形成手段としては上
記スピンコーティング法の外にディップコーティング法
があるが、何れのコーティング方式を採用した場合に
も、後続の焼成工程で低屈折率薄膜１０Ｂの接着強度を
高めるためには焼成温度を高目に設定する必要があり、
陰極線管１の電子放出特性の維持と両立させることが困
難であった。As a means for forming the low refractive index thin film 10B, there is a dip coating method in addition to the above spin coating method. Whichever coating method is adopted, the low refractive index thin film 10B is adhered in the subsequent baking step. To increase the strength, it is necessary to set the firing temperature higher.
It was difficult to achieve compatibility with the maintenance of the electron emission characteristics of the cathode ray tube 1.
【０００９】[0009]
【課題を解決するための手段】上記課題を解決するため
の手段として本発明方法は、酸化すず〔ＳｎＯ2 〕を主
成分とする導電性薄膜をフェースパネルの表面に形成し
た陰極線管の表面処理工程で、前記導電性薄膜の表面
に、シリケート加水分解物と、硝酸又は塩酸又は硫酸の
群から選ばれた微量の無機強酸と有機溶剤との希釈液か
らなるコーティング材溶液を塗布し、その後の焼成処理
により低屈折率薄膜を形成し、前記フェースパネルの表
面に前記導電性薄膜及び低屈折率薄膜からなる導電性反
射防止膜を形成することを特徴とする。As a means for solving the above problems, the method of the present invention is a surface treatment of a cathode ray tube in which a conductive thin film containing tin oxide [SnO 2 ] as a main component is formed on the surface of a face panel. In the step, the surface of the conductive thin film, a silicate hydrolyzate, and a coating material solution consisting of a dilute solution of a small amount of a strong inorganic acid selected from the group of nitric acid or hydrochloric acid or sulfuric acid and an organic solvent, and then A low refractive index thin film is formed by baking, and a conductive antireflection film including the conductive thin film and the low refractive index thin film is formed on the surface of the face panel.
【００１０】また、酸化すず〔ＳｎＯ2 〕を主成分とす
る導電性薄膜をフェースパネルの表面に形成した陰極線
管の表面処理工程で、前記導電性薄膜の表面に、シリケ
ート加水分解物と、酸性フッ化アンモニウム又はフッ化
水素酸の群から選ばれた微量の酸と、有機溶剤との希釈
液からなるコーティング材溶液を塗布し、その後の焼成
処理により低屈折率薄膜を形成し、前記フェースパネル
の表面に前記導電性薄膜及び低屈折率薄膜からなる導電
性反射防止膜を形成することを特徴とする。Further, in the surface treatment step of the cathode ray tube in which the conductive thin film containing tin oxide [SnO 2 ] as a main component is formed on the surface of the face panel, the surface of the conductive thin film is treated with a silicate hydrolyzate and an acid. A coating material solution consisting of a dilute solution of an organic solvent and a trace amount of acid selected from the group of ammonium fluoride or hydrofluoric acid is applied, and a low-refractive-index thin film is formed by subsequent baking treatment. A conductive antireflection film including the conductive thin film and the low refractive index thin film is formed on the surface of the.
【００１１】更に、酸化すず〔ＳｎＯ2 〕を主成分とす
る導電性薄膜をフェースパネルの表面に形成した陰極線
管の表面処理工程で、前記導電性薄膜の表面を酸性フッ
化アンモニウム又はフッ化水素酸の群から選ばれた酸の
希釈溶液で処理した上で、シリケート加水分解物を有機
溶剤で希釈したコーティング材溶液を塗布し、その後の
焼成処理により低屈折率薄膜を形成し、前記フェースパ
ネルの表面に前記導電性薄膜及び低屈折率薄膜からなる
導電性反射防止膜を形成することを特徴とする。Further, in the surface treatment step of the cathode ray tube in which a conductive thin film containing tin oxide [SnO 2 ] as a main component is formed on the surface of the face panel, the surface of the conductive thin film is treated with ammonium acid fluoride or hydrogen fluoride. After treatment with a dilute solution of an acid selected from the group of acids, a coating material solution prepared by diluting a silicate hydrolyzate with an organic solvent is applied, and a low-refractive-index thin film is formed by subsequent baking treatment. A conductive antireflection film including the conductive thin film and the low refractive index thin film is formed on the surface of the.
【００１２】また、前記酸化すず〔ＳｎＯ2 〕を主成分
とする導電性薄膜をＣＶＤ法により形成し、必要に応じ
て前記コーティング材溶液を塗布後、２５０℃以下の温
度で焼成処理することを特徴とする。It is also possible to form a conductive thin film containing tin oxide [SnO 2 ] as a main component by a CVD method, apply the coating material solution, if necessary, and perform a baking treatment at a temperature of 250 ° C. or lower. Characterize.
【００１３】[0013]
【作用】本発明方法では、コーティング材溶液中に微量
の無機強酸もしくはフッ化水素酸等を添加することによ
り導電性薄膜と低屈折率薄膜との結合力が強化される。
また、コーティング材溶液の塗布に先立って、導電性薄
膜の表面をフッ化水素酸等の希釈溶液により処理するこ
とにより、導電性薄膜と低屈折率薄膜との結合力が強化
される。これら方法により、後続の焼成工程で焼成温度
を高めなくても、高強度の導電性反射防止膜が形成され
る。In the method of the present invention, the binding force between the conductive thin film and the low refractive index thin film is strengthened by adding a small amount of a strong inorganic acid or hydrofluoric acid to the coating material solution.
Further, prior to applying the coating material solution, the surface of the conductive thin film is treated with a dilute solution of hydrofluoric acid or the like, so that the binding force between the conductive thin film and the low refractive index thin film is strengthened. By these methods, a high-strength conductive antireflection film is formed without increasing the firing temperature in the subsequent firing step.
【００１４】[0014]
【実施例】以下、図１及び図２を参照しながら本発明の
三つの実施例を説明する。尚、図３と同一の構成部材は
原則として同一の参照番号で表示し、重複事項に関して
は説明を省略する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Three embodiments of the present invention will be described below with reference to FIGS. Note that, in principle, the same components as those in FIG. 3 are denoted by the same reference numerals, and the description of the overlapping matters will be omitted.
【００１５】第１の実施例においては、図１に示すよう
に陰極線管１のフェースパネル１Ａの表面に、酸化すず
〔ＳｎＯ2 〕を主成分とする導電性薄膜１０ＡをＣＶＤ
法にて形成した後、低屈折率薄膜１０Ｂを形成する。こ
の低屈折率薄膜１０Ｂの形成は、導電性薄膜１０Ａの表
面に、スピンコーティング方式でシリケート加水分解物
１重量部、エチルアルコール９８重量部、及び硝酸０．
０２重量部からなるコーティング材溶液５を塗布し、そ
の後、陰極線管１を焼成炉中に導入し、１８０℃で２０
分間焼成処理を施こすことにより行なわれる。上記コー
ティング材溶液５が硬化することによって、フェースパ
ネル１Ａの表面全域に均一な膜厚を持った、導電性薄膜
１０Ａ及び低屈折率薄膜１０Ｂからなる導電性反射防止
膜１０が生成される。In the first embodiment, as shown in FIG. 1, a conductive thin film 10A containing tin oxide [SnO 2 ] as a main component is formed on the surface of the face panel 1A of the cathode ray tube 1 by CVD.
Then, the low refractive index thin film 10B is formed. The low refractive index thin film 10B was formed by spin coating on the surface of the conductive thin film 10A in an amount of 1 part by weight of a silicate hydrolyzate, 98 parts by weight of ethyl alcohol, and 0.
The coating material solution 5 consisting of 02 parts by weight is applied, and then the cathode ray tube 1 is introduced into a firing furnace and heated at 180 ° C. for 20 hours.
It is carried out by applying a baking treatment for a minute. When the coating material solution 5 is cured, the conductive antireflection film 10 including the conductive thin film 10A and the low refractive index thin film 10B having a uniform film thickness is formed on the entire surface of the face panel 1A.
【００１６】無機強酸、例えば上記硝酸は、酸化すず
〔ＳｎＯ2 〕を主成分とする導電性薄膜１０Ａと、上記
シリケート加水分解物を主成分とする低屈折率薄膜１０
Ｂとの結合力を高めることによって、焼成処理時に低屈
折率薄膜１０Ｂの硬化を促進させる。この結果、焼成処
理を比較的低温（１８０℃）で実施しているにも拘ら
ず、最終的に形成される導電性反射防止膜１０は、従来
品の約３倍に相当する耐摩擦強度を取得することが可能
となる。The strong inorganic acid such as nitric acid is a conductive thin film 10A containing tin oxide [SnO 2 ] as a main component and a low refractive index thin film 10 containing the above silicate hydrolyzate as a main component.
By increasing the bonding force with B, the curing of the low refractive index thin film 10B is promoted during the firing process. As a result, the conductive antireflection film 10 to be finally formed has a friction resistance strength equivalent to about three times that of the conventional product, even though the baking treatment is performed at a relatively low temperature (180 ° C.). It becomes possible to acquire.
【００１７】無機強酸としては上記硝酸のほか、塩酸ま
たは硫酸が使用可能であり、その添加量は上記コーティ
ング材溶液１００重量部中０．００１〜０．０８重量部
を占めるように調節する。As the strong inorganic acid, hydrochloric acid or sulfuric acid can be used in addition to the above nitric acid, and the addition amount thereof is adjusted so as to occupy 0.001 to 0.08 part by weight in 100 parts by weight of the coating material solution.
【００１８】一方、第２の実施例においては、ＣＶＤ法
にて形成された導電性薄膜１０Ａと低屈折率薄膜１０Ｂ
との結合力を高める媒体として前述した実施例の無機強
酸の代りに、酸性フッ化アンモニウムまたはフッ化水素
酸の群から選ばれた酸を使用する。その酸の添加量は、
シリケート加水分解物を主成分とするコーティング材溶
液１００重量部中０．００１〜０．１５重量部を占める
ように調節する。この場合、焼成温度が１８０℃に設定
さているにも拘らず最終的に形成される導電性反射防止
膜１０は、従来品の約２倍に相当する耐摩擦強度を取得
することが可能となる。On the other hand, in the second embodiment, the conductive thin film 10A and the low refractive index thin film 10B formed by the CVD method are used.
An acid selected from the group of ammonium acid fluoride or hydrofluoric acid is used instead of the strong inorganic acid of the above-mentioned embodiment as a medium for enhancing the binding force with. The amount of acid added is
It is adjusted so as to occupy 0.001 to 0.15 parts by weight in 100 parts by weight of a coating material solution containing a silicate hydrolyzate as a main component. In this case, the conductive antireflection film 10 that is finally formed, despite the firing temperature being set to 180 ° C., can obtain a friction resistance strength equivalent to about twice that of the conventional product. .
【００１９】上述した二つの実施例が無機強酸もしくは
酸の添加により導電性薄膜１０Ａと低屈折率薄膜１０Ｂ
との結合力の強化を利用することによって比較的低温の
焼成処理条件下でも導電性反射防止膜１０の耐摩擦強度
を高めようとしたのに対し、以下の実施例では、コーテ
ィング材溶液の塗布に先立って酸化すず〔ＳｎＯ2 〕を
主成分とする導電性薄膜１０Ａの表面を酸性フッ化アン
モニウムまたはフッ化水素酸の希釈溶液で洗浄すること
によって、上記導電性薄膜１０Ａの表面を活性化し、こ
れによって上記導電性薄膜１０Ａと低屈折率薄膜１０Ｂ
との結合力を強め、焼成温度の低下を可能にするもので
ある。The above-mentioned two embodiments are the conductive thin film 10A and the low refractive index thin film 10B obtained by adding an inorganic strong acid or acid.
While it was attempted to increase the friction resistance of the conductive antireflection film 10 even under a relatively low temperature baking treatment condition by utilizing the strengthening of the binding force with the coating material solution, in the following examples, the coating material solution was applied. Prior to the above, the surface of the conductive thin film 10A containing tin oxide [SnO 2 ] as a main component is washed with a diluted solution of ammonium acid fluoride or hydrofluoric acid to activate the surface of the conductive thin film 10A. Thereby, the conductive thin film 10A and the low refractive index thin film 10B
It strengthens the binding force with and enables the firing temperature to be lowered.
【００２０】具体的には、図２（Ａ）に示すように陰極
線管１のフェースパネル１Ａの表面に酸化すず〔ＳｎＯ
2 〕を主成分とする導電性薄膜１０ＡをＣＶＤ法により
形成した後、その表面にバフ６等による研磨加工を施こ
し、ミクロンオーダーのダストを除去する。その後、図
２（Ｂ）に示すように、スポンジ７にフッ化水素酸もし
くは酸性フッ化アンモニウムを有機溶剤で希釈した溶液
５Ａを滲み込ませ、このスポンジ７で第１の導電性薄膜
１０Ａの表面を拭うことにより活性化する。Specifically, as shown in FIG. 2A, tin oxide [SnO] is formed on the surface of the face panel 1A of the cathode ray tube 1.
2 ] is formed by a CVD method, and then the surface thereof is polished by a buff 6 or the like to remove micron-order dust. Then, as shown in FIG. 2B, the sponge 7 is soaked with a solution 5A prepared by diluting hydrofluoric acid or ammonium acid fluoride with an organic solvent, and the sponge 7 is used to surface the first conductive thin film 10A. Activate by wiping.
【００２１】次いで、図２（Ｃ）に示すように導電性薄
膜１０Ａの表面を水８で洗浄し、その後、図２（Ｄ）に
示すようにシリケート加水分解物を有機溶剤で希釈した
コーティング溶液５を上記導電性薄膜１０Ａの上に塗布
し、スピンコーティングにより展延させて低屈折率薄膜
１０Ｂを形成する。Next, as shown in FIG. 2 (C), the surface of the conductive thin film 10A is washed with water 8, and then, as shown in FIG. 2 (D), a coating solution prepared by diluting a silicate hydrolyzate with an organic solvent. 5 is applied on the conductive thin film 10A and spread by spin coating to form a low refractive index thin film 10B.
【００２２】最後に陰極線管１を焼成炉中に導入し、１
８０℃の温度で２０分間焼成処理を施こす。コーティン
グ材溶液５が硬化することによって、フェースパネル１
Ａの表面全域に均一な膜厚を持った導電性薄膜１０Ａと
低屈折率薄膜１０Ｂからなる導電性反射防止膜１０が形
成される。Finally, the cathode ray tube 1 was introduced into the firing furnace, and 1
A baking treatment is performed at a temperature of 80 ° C. for 20 minutes. When the coating material solution 5 is cured, the face panel 1
A conductive antireflection film 10 including a conductive thin film 10A having a uniform film thickness and a low refractive index thin film 10B is formed on the entire surface of A.
【００２３】尚、活性化材として使用するフッ化水素酸
もしくは酸性フッ化アンモニウムの濃度は、希釈材とし
て使用される有機溶剤の１００重量部のうち、フッ化水
素酸０．５〜１重量部、酸性フッ化アンモニウム５〜２
０重量部を占めるように調節する。更に詳細に説明する
と、フッ化水素酸の濃度が０．５重量部、酸性フッ化ア
ンモニウムの濃度が５重量部をそれぞれ下回ると、導電
性薄膜１０Ａの活性化に長時間を要し、また、上記フッ
化水素酸の濃度が１重量部、酸性フッ化アンモニウムの
濃度が２０重量部をそれぞれ上回ると、導電性薄膜１０
Ａの膜厚が部分的に変化して外観が均一でなくなる。The concentration of hydrofluoric acid or ammonium acid fluoride used as the activator is 0.5 to 1 part by weight of hydrofluoric acid in 100 parts by weight of the organic solvent used as the diluent. , Acidic ammonium fluoride 5-2
Adjust to occupy 0 parts by weight. More specifically, when the concentration of hydrofluoric acid is less than 0.5 parts by weight and the concentration of ammonium acid fluoride is less than 5 parts by weight, it takes a long time to activate the conductive thin film 10A. When the concentration of hydrofluoric acid exceeds 1 part by weight and the concentration of ammonium acid fluoride exceeds 20 parts by weight, the conductive thin film 10
The film thickness of A partially changes and the appearance is not uniform.
【００２４】[0024]
【発明の効果】本発明方法によれば、コーティング材溶
液中に微量の無機強酸もしくはフッ化水素酸等を添加す
ることにより、低屈折率薄膜の導電性薄膜との結合力が
強化される。また、コーティング材溶液の塗布に先立っ
て、導電性薄膜の表面をフッ化アンモニウム等の希釈溶
液により処理することにより、導電性薄膜に対する低屈
折率薄膜の結合力が強化される。これらの方法により、
後続の焼成工程で焼成温度を高めなくても、導電性反射
防止膜の強度が良好な水準に維持され、高い耐摩擦強度
が確保される。According to the method of the present invention, the binding force between the low refractive index thin film and the conductive thin film is strengthened by adding a small amount of a strong inorganic acid or hydrofluoric acid to the coating material solution. Further, prior to the application of the coating material solution, the surface of the conductive thin film is treated with a dilute solution of ammonium fluoride or the like, whereby the binding force of the low refractive index thin film to the conductive thin film is strengthened. By these methods,
Even if the firing temperature is not increased in the subsequent firing step, the strength of the conductive antireflection film is maintained at a good level and high friction resistance is secured.
【図１】本発明方法の実施装置例を示す部分断面を含む
正面図FIG. 1 is a front view including a partial cross section showing an example of an apparatus for carrying out a method of the present invention.
【図２】（Ａ）（Ｂ）（Ｃ）（Ｄ）は本発明方法の他の
実施装置例を示す正面図2 (A), (B), (C) and (D) are front views showing another embodiment of the method of the present invention.
【図３】従来方法を説明するための陰極線管及びスピン
コーティング装置を示す部分断面を含む正面図FIG. 3 is a front view including a partial cross section showing a cathode ray tube and a spin coating apparatus for explaining a conventional method.
１ 陰極線管 １Ａ フェースパネル ５ コーティング材溶液 １０ 導電性反射防止膜 １０Ａ 導電性薄膜 １０Ｂ 低屈折率薄膜 1 Cathode Ray Tube 1A Face Panel 5 Coating Material Solution 10 Conductive Antireflection Film 10A Conductive Thin Film 10B Low Refractive Index Thin Film
Claims (5)
電性薄膜をフェースパネルの表面に形成した陰極線管の
表面処理工程で、前記導電性薄膜の表面に、シリケート
加水分解物と、硝酸又は塩酸又は硫酸の群から選ばれた
微量の無機強酸と有機溶剤との希釈液からなるコーティ
ング材溶液を塗布し、その後の焼成処理により低屈折率
薄膜を形成し、前記フェースパネルの表面に前記導電性
薄膜及び低屈折率薄膜からなる導電性反射防止膜を形成
することを特徴とする陰極線管の製造方法。1. A surface treatment process of a cathode ray tube in which a conductive thin film containing tin oxide [SnO 2 ] as a main component is formed on a surface of a face panel, and a silicate hydrolyzate and nitric acid are formed on the surface of the conductive thin film. Alternatively, a coating material solution consisting of a dilute solution of a small amount of a strong inorganic acid selected from the group of hydrochloric acid or sulfuric acid and an organic solvent is applied, and a low-refractive index thin film is formed by a subsequent baking treatment, and the surface of the face panel A method of manufacturing a cathode ray tube, comprising forming a conductive antireflection film composed of a conductive thin film and a low refractive index thin film.
電性薄膜をフェースパネルの表面に形成した陰極線管の
表面処理工程で、前記導電性薄膜の表面に、シリケート
加水分解物と、酸性フッ化アンモニウム又はフッ化水素
酸の群から選ばれた微量の酸と、有機溶剤との希釈液か
らなるコーティング材溶液を塗布し、その後の焼成処理
により低屈折率薄膜を形成し、前記フェースパネルの表
面に前記導電性薄膜及び低屈折率薄膜からなる導電性反
射防止膜を形成することを特徴とする陰極線管の製造方
法。2. A surface treatment process of a cathode ray tube in which a conductive thin film containing tin oxide [SnO 2 ] as a main component is formed on the surface of a face panel, and a silicate hydrolyzate and an acidic substance are added to the surface of the conductive thin film. A coating material solution consisting of a dilute solution of an organic solvent and a trace amount of acid selected from the group of ammonium fluoride or hydrofluoric acid is applied, and a low-refractive-index thin film is formed by subsequent baking treatment. A method of manufacturing a cathode ray tube, characterized in that a conductive antireflection film comprising the conductive thin film and a low refractive index thin film is formed on the surface of.
電性薄膜をフェースパネルの表面に形成した陰極線管の
表面処理工程で、前記導電性薄膜の表面を酸性フッ化ア
ンモニウム又はフッ化水素酸の群から選ばれた酸の希釈
溶液で処理した上で、シリケート加水分解物を有機溶剤
で希釈したコーティング材溶液を塗布し、その後の焼成
処理により低屈折率薄膜を形成し、前記フェースパネル
の表面に前記導電性薄膜及び低屈折率薄膜からなる導電
性反射防止膜を形成することを特徴とする陰極線管の製
造方法。3. A surface treatment process of a cathode ray tube in which a conductive thin film containing tin oxide [SnO 2 ] as a main component is formed on the surface of a face panel, and the surface of the conductive thin film is treated with ammonium acid fluoride or hydrogen fluoride. After treatment with a dilute solution of an acid selected from the group of acids, a coating material solution prepared by diluting a silicate hydrolyzate with an organic solvent is applied, and a low-refractive-index thin film is formed by subsequent baking treatment. A method of manufacturing a cathode ray tube, characterized in that a conductive antireflection film comprising the conductive thin film and a low refractive index thin film is formed on the surface of.
る導電性薄膜をＣＶＤ法により形成することを特徴とす
る請求項１、２又は３記載の陰極線管の製造方法。4. The method of manufacturing a cathode ray tube according to claim 1, wherein the conductive thin film containing tin oxide [SnO 2 ] as a main component is formed by a CVD method.
０℃以下の温度で焼成処理することを特徴とする請求項
４記載の陰極線管の製造方法。5. After applying the coating material solution, 25
The method for producing a cathode ray tube according to claim 4, wherein the firing treatment is performed at a temperature of 0 ° C. or lower.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6134031A JP2790042B2 (en) | 1994-06-16 | 1994-06-16 | Manufacturing method of cathode ray tube |
| KR1019950015339A KR100196975B1 (en) | 1994-06-16 | 1995-06-12 | Method of manufacturing cathode ray tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6134031A JP2790042B2 (en) | 1994-06-16 | 1994-06-16 | Manufacturing method of cathode ray tube |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH087757A true JPH087757A (en) | 1996-01-12 |
| JP2790042B2 JP2790042B2 (en) | 1998-08-27 |
Family
ID=15118762
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6134031A Expired - Lifetime JP2790042B2 (en) | 1994-06-16 | 1994-06-16 | Manufacturing method of cathode ray tube |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2790042B2 (en) |
| KR (1) | KR100196975B1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100385544B1 (en) * | 1996-09-18 | 2003-08-14 | 주식회사 엘지이아이 | Method for manufacturing cathode ray tube |
| KR100329558B1 (en) * | 1999-03-31 | 2002-03-20 | 김순택 | Surface treating layer, preparing method and display device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0585714A (en) * | 1991-09-30 | 1993-04-06 | Korukooto Eng Kk | Production of alcohol-base silica sol which silica coating film can be formed by low temperature baking |
| JPH0660809A (en) * | 1992-08-04 | 1994-03-04 | Matsushita Electron Corp | Manufacture of picture tube |
-
1994
- 1994-06-16 JP JP6134031A patent/JP2790042B2/en not_active Expired - Lifetime
-
1995
- 1995-06-12 KR KR1019950015339A patent/KR100196975B1/en not_active IP Right Cessation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0585714A (en) * | 1991-09-30 | 1993-04-06 | Korukooto Eng Kk | Production of alcohol-base silica sol which silica coating film can be formed by low temperature baking |
| JPH0660809A (en) * | 1992-08-04 | 1994-03-04 | Matsushita Electron Corp | Manufacture of picture tube |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2790042B2 (en) | 1998-08-27 |
| KR960002457A (en) | 1996-01-26 |
| KR100196975B1 (en) | 1999-06-15 |
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