KR100329558B1 - Surface treating layer, preparing method and display device - Google Patents
Surface treating layer, preparing method and display device Download PDFInfo
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- KR100329558B1 KR100329558B1 KR1019990011256A KR19990011256A KR100329558B1 KR 100329558 B1 KR100329558 B1 KR 100329558B1 KR 1019990011256 A KR1019990011256 A KR 1019990011256A KR 19990011256 A KR19990011256 A KR 19990011256A KR 100329558 B1 KR100329558 B1 KR 100329558B1
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- surface treatment
- film
- treatment film
- display element
- substrate
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- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000004381 surface treatment Methods 0.000 claims abstract description 41
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000011248 coating agent Substances 0.000 claims abstract description 21
- 238000000576 coating method Methods 0.000 claims abstract description 21
- 238000010304 firing Methods 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000005507 spraying Methods 0.000 claims abstract description 14
- 239000000203 mixture Substances 0.000 claims abstract description 13
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 13
- 238000006068 polycondensation reaction Methods 0.000 claims abstract description 11
- 239000007864 aqueous solution Substances 0.000 claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 claims abstract description 10
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims abstract description 7
- 230000002378 acidificating effect Effects 0.000 claims abstract description 6
- 239000007809 chemical reaction catalyst Substances 0.000 claims abstract description 6
- 150000001875 compounds Chemical class 0.000 claims abstract description 4
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 12
- 239000003638 chemical reducing agent Substances 0.000 claims description 6
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical group O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 claims description 4
- -1 silica compound Chemical class 0.000 claims description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 14
- 239000007788 liquid Substances 0.000 description 10
- 239000007921 spray Substances 0.000 description 10
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 8
- 229910008051 Si-OH Inorganic materials 0.000 description 8
- 229910006358 Si—OH Inorganic materials 0.000 description 8
- 230000003667 anti-reflective effect Effects 0.000 description 7
- 150000002736 metal compounds Chemical class 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 235000019441 ethanol Nutrition 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 230000004313 glare Effects 0.000 description 4
- 239000012046 mixed solvent Substances 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000006722 reduction reaction Methods 0.000 description 3
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 150000007530 organic bases Chemical class 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/86—Vessels; Containers; Vacuum locks
- H01J29/88—Vessels; Containers; Vacuum locks provided with coatings on the walls thereof; Selection of materials for the coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
- H01J9/205—Applying optical coatings or shielding coatings to the vessel of flat panel displays, e.g. applying filter layers, electromagnetic interference shielding layers, anti-reflection coatings or anti-glare coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2229/00—Details of cathode ray tubes or electron beam tubes
- H01J2229/863—Passive shielding means associated with the vessel
- H01J2229/8635—Antistatic shielding
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
Abstract
본 발명은 표시소자용 표면처리막, 그 제조방법 및 그 방법에 따라 제조된 표면처리막을 구비하고 있는 것을 특징으로 하는 표시소자를 개시한다. 상기 표면처리막의 제조방법은 (a) 기판 표면을 예열한 다음, 실리케이트계 표면처리 조성물을 코팅하는 단계; (b) 실리케이트계 표면처리 조성물이 코팅되어 있는 상기 기판에 실리카계 화합물의 중축합 반응 촉매인 순수, 산성 또는 염기성 수용액을 분사하는 단계; 및 (c) 상기 (b)단계에서 얻어지는 기판을 소성하는 단계를 포함하는 것을 특징으로 하는 표시소자용 표면처리막의 제조방법을 포함하고 있다. 본 발명에 따르면, 저온소성공정으로도 도전성 및 막경도 특성이 우수한 표면처리막을 형성할 수 있다. 따라서 고온소성과정에서 수반되는 여러 가지 문제점을 해결할 수 있는 동시에 제조비용 및 시간이 절감된다.The present invention discloses a display device comprising a surface treatment film for a display element, a method of manufacturing the same, and a surface treatment film manufactured according to the method. The method of manufacturing the surface treatment film includes (a) preheating a substrate surface and then coating a silicate-based surface treatment composition; (b) spraying a pure, acidic or basic aqueous solution which is a polycondensation reaction catalyst of a silica-based compound on the substrate coated with the silicate-based surface treatment composition; And (c) firing the substrate obtained in step (b). According to the present invention, it is possible to form a surface treatment film having excellent conductivity and film hardness properties even at a low temperature baking process. Therefore, various problems associated with high temperature firing process can be solved and manufacturing cost and time can be saved.
Description
본 발명은 표시소자에 관한 것으로서, 보다 상세하기로는 표시소자의 디스플레이면에 형성하는 표면처리막과, 이 표면처리막을 저온 소성공정에서 치밀화된 상태로 제조하는 방법과, 상기 표면처리막을 채용하고 있는 표시소자에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a display element, and more particularly, a surface treatment film formed on a display surface of a display element, a method of manufacturing the surface treatment film in a densified state in a low temperature baking process, and the surface treatment film. It relates to a display element.
표시소자, 특히 음극선관의 디스플레이면에는 정전기 방지, 외광 반사 방지, 전자파 차폐, 색감향상 등의 기능을 부여하기 위한 표면처리막을 형성하는 것이 일반적이다. 표면처리막은 그 막의 특성 차이에 따라 논-글래어 대전방지막(non-glare antistatic layer)과 반사방지 대전방지막(anti-reflective antistatic layer)으로 크게 나눌 수 있다.On the display surface of a display element, especially a cathode ray tube, it is common to form a surface treatment film for imparting antistatic, external light reflection, electromagnetic shielding, color enhancement, and the like. The surface treatment film can be roughly divided into a non-glare antistatic layer and an anti-reflective antistatic layer according to the difference in properties of the film.
논-글래어 대전방지막은 주성분인 실리카졸을 스프레이 코팅하여 형성시킨 1층 코팅막이고, 반사방지 대전방지막은 도전막과 실리카막으로 구성된 이층 스핀코팅막 상부에 실리카를 스프레이 코팅하여 형성시킨 3층 코팅막이다. 표시소자중에서 음극선관의 디스플레이면에 표면처리막을 형성하는 방법은 다음과 같다.The non-glare antistatic film is a one-layer coating film formed by spray coating a main component, silica sol, and the anti-reflective antistatic film is a three-layer coating film formed by spray coating silica on a two-layer spin coating film composed of a conductive film and a silica film. . The method of forming the surface treatment film on the display surface of the cathode ray tube among the display elements is as follows.
먼저 요구되는 기능을 발휘하기에 적절한 물질을 함유하고 있는 졸을 스프레이 또는 스핀 코팅하여 막을 형성한 다음, 200 내지 300℃로 조절된 소성로에서 열처리하는 공정에 의해 형성된다. 이와 같이 200 내지 300℃의 고온에서 소성하게 되면, 코팅막에 존재하는 미립자들이 치밀하게 결합되어 있는 망목 구조의 표면처리막을 형성할 수 있다. 그러나, 플라스틱과 같이 내열성이 약하거나 열에 의하여 변성되는 제품 등에 적용하기가 곤란하고 코팅설비를 손상시킬 우려가 있다. 또한, 폭축 발생의 위험성을 배제할 수 없을 뿐만 아니라, 고온 열처리로 인하여 냉각에 과다한 비용 및 시간이 소요되는 문제점이 있다.A film is first formed by spraying or spin coating a sol containing a material suitable for exerting the required function to form a film, and then heat-treating in a kiln controlled at 200 to 300 캜. When firing at a high temperature of 200 to 300 ℃ as described above, it is possible to form a surface treatment film of the mesh structure in which the fine particles present in the coating film is tightly bonded. However, it is difficult to apply to a product having a low heat resistance, such as plastic or modified by heat, and there is a risk of damaging the coating equipment. In addition, the risk of deflation may not be excluded, and there is a problem that excessive cost and time are required for cooling due to the high temperature heat treatment.
본 발명이 이루고자 하는 기술적 과제는 상기 문제점을 해결하기 위하여 저온소성공정으로도 치밀화된 망목구조를 갖는 표시소자용 표면처리막을 제공하는 것이다.SUMMARY OF THE INVENTION The present invention has been made in an effort to provide a surface treatment film for a display device having a dense mesh structure even in a low temperature baking process in order to solve the above problems.
본 발명이 이루고자 하는 다른 기술적 과제는 상기 표면처리막을 제조하는 방법을 제공하는 것이다.Another object of the present invention is to provide a method of manufacturing the surface treatment film.
본 발명이 이루고자 하는 또 다른 기술적 과제는 상기 방법에 따라 제조된 표면처리막을 구비하고 있는 표시소자를 제공하는 것이다.Another object of the present invention is to provide a display device having a surface treatment film manufactured according to the above method.
상기 과제를 이루기 위하여 본 발명에서는, (a) 기판 표면을 예열한 다음, 실리케이트계 표면처리 조성물을 코팅하는 단계; (b) 실리케이트계 표면처리 조성물이 코팅되어 있는 상기 기판에 실리카계 화합물의 중축합 반응 촉매인 순수, 산성 또는 염기성 수용액을 분사하는 단계; 및 (c) 상기 (b)단계에서 얻어지는 기판을 소성하는 단계를 포함하는 것을 특징으로 하는 표시소자용 표면처리막의 제조방법을 제공한다.In order to achieve the above object, in the present invention, (a) preheating the substrate surface, and then coating a silicate-based surface treatment composition; (b) spraying a pure, acidic or basic aqueous solution which is a polycondensation reaction catalyst of a silica-based compound on the substrate coated with the silicate-based surface treatment composition; And (c) firing the substrate obtained in step (b).
상기 (b)단계에서, 실리카계 화합물의 중축합 반응 촉매에는 환원제를 더 부가할 수 있다. 이와 같이 환원제를 더 부가하는 경우는 표면처리 조성물에 전자파 차폐를 위하여 금속 이온을 부가하는 경우이다.In the step (b), a reducing agent may be further added to the polycondensation reaction catalyst of the silica compound. In this case, the addition of the reducing agent is a case where metal ions are added to the surface treatment composition for shielding electromagnetic waves.
본 발명의 다른 과제는 상기 방법에 의하여 제조된 표면처리막에 의하여 이루어진다.Another object of the present invention is achieved by a surface treatment film produced by the above method.
본 발명의 또 다른 과제는 상기 표면처리막을 채용하고 있는 표시소자에 의하여 이루어진다. 여기에서 표시소자는 음극선관이 바람직하다.Another object of the present invention is achieved by a display element employing the surface treatment film. The display element is preferably a cathode ray tube.
상기 표면처리 조성물은 당해 기술분야에서 통상적으로 사용되는 표면처리 조성물이다. 이러한 표면처리 조성물을 코팅하는 방법도 통상적으로 사용하는 방법을 사용하며 특별히 제한되지 않는다.The surface treatment composition is a surface treatment composition commonly used in the art. The method of coating such a surface treatment composition also uses a conventional method and is not particularly limited.
이하, 본 발명에 따른 표면처리막 제조방법에 대하여 설명하기로 한다.Hereinafter, a method for manufacturing a surface treatment film according to the present invention will be described.
먼저, 기판 표면을 소정온도로 예열한다. 표면처리막이 형성되는 표시소자가 음극선관인 경우, 예열온도는 50 내지 100℃, 바람직하기로는 80 내지 100℃이다.First, the substrate surface is preheated to a predetermined temperature. When the display element on which the surface treatment film is formed is a cathode ray tube, the preheating temperature is 50 to 100 ° C, preferably 80 to 100 ° C.
이어서, 예열된 기판 표면에 순수, 산성 수용액 또는 염기성 수용액을 분사하는데, 스프레이 건(spray gun)을 이용하는 것이 바람직하다. 이렇게 스프레이 건을 이용하면 예열된 기판 표면에 미세한 액적을 분사시킬 수 있게 되고, 이 미세한 액적들이 기판에 닿자마자 기화한다.A spray gun is then preferably used to spray pure, acidic or basic aqueous solution onto the preheated substrate surface. This spray gun allows the spraying of fine droplets onto the preheated substrate surface, which vaporizes as soon as the droplets touch the substrate.
실리케이트계 표면처리 조성물에 전자파 차폐를 위한 금속 화합물이 부가되는 경우에는, 상기 실리카계 화합물의 중축합반응 촉매에는 상기 금속 화합물을 환원시키기 위하여 환원제를 더 첨가할 수 있다. 여기에서 환원제로는 포르말린, 히드라진 등을 사용한다.When a metal compound for shielding electromagnetic waves is added to the silicate surface treatment composition, a reducing agent may be further added to the polycondensation reaction catalyst of the silica compound to reduce the metal compound. Herein, formalin, hydrazine, or the like is used as the reducing agent.
그 후, 상기 기판을 소성처리한다. 이 때 소성온도는 80 내지 200℃, 특히 100 내지 150℃가 바람직하다.Thereafter, the substrate is calcined. At this time, the firing temperature is preferably 80 to 200 ° C, particularly 100 to 150 ° C.
본 발명에 따른 표면처리막의 제조방법은, 상술한 바와 같이 기판 표면에 순수, 산성 수용액 또는 염기성 수용액을 분사하고 이를 기화시켜 실리카계 화합물의 중축합 반응 또는 금속 화합물의 환원반응을 소성공정전에 일어나게 함으로써 종래의 고온 소성공정 대신 저온 소성공정에서도 치밀화된 망상 구조를 갖는 표면처리막을 형성한 데 그 특징이 있다. 이러한 특징과 관련한 본 발명의 원리는 다음과 같이 설명된다.Method for producing a surface treatment film according to the present invention, by injecting a pure, acidic aqueous solution or basic aqueous solution to the surface of the substrate as described above and vaporizing it to cause the polycondensation reaction of the silica-based compound or the reduction reaction of the metal compound to occur before the firing process It is characterized by forming a surface treatment film having a densified network structure in a low temperature firing process instead of the conventional high temperature firing process. The principle of the present invention in connection with this feature is explained as follows.
상술한 바와 같이, 표면처리막은 표면처리 조성물을 디스플레이면에 코팅하여 막을 형성한 다음, 이를 소성하여 형성된다. 상기 막은 Si-OH와 Si-OR간 또는 Si-OH와 Si-OH간의 중축합에 의하여 Si-O-Si 결합이 생성되면서 막질이 치밀화되고, 금속 화합물이 환원되어 석출됨으로써 대전방지, 외광반사 및 전자파 차폐 기능을 갖는 표면처리막으로서의 기능을 발휘할 수 있게 된다.As described above, the surface treatment film is formed by coating the surface treatment composition on the display surface to form a film and then firing the film. The film is densified as Si-O-Si bonds are produced by polycondensation between Si-OH and Si-OR or between Si-OH and Si-OH, and the metal compound is reduced to precipitate, thereby preventing antistatic, external light reflection and The function as a surface treatment film which has an electromagnetic wave shielding function can be exhibited.
상술한 Si-OH와 Si-OR 또는 Si-OH와 Si-OH간의 중축합반응과 금속 화합물의 환원 반응은 일정온도 이상의 소성처리에 의하여 가속화된다. 본 발명에서는 표면 처리 조성물이 코팅된 막에 순수, 산성 수용액 또는 염기성 수용액을 분사한 다음, 기화시키면 Si-OR이 Si-OH로 변환되어 중축합반응속도가 촉진될 뿐만 아니라, Si-OH와 Si-OH간의 중축합반응도 촉진된다. 그리고 표면처리 조성물이 금속 화합물을 포함하고 있는 경우는 금속 화합물의 환원반응을 촉진시킨다.The polycondensation reaction between Si-OH and Si-OR or Si-OH and Si-OH and the reduction reaction of the metal compound described above are accelerated by the calcination treatment above a certain temperature. In the present invention, spraying pure, acidic aqueous solution or basic aqueous solution onto the surface-coated film and then vaporizing the Si-OR is converted to Si-OH not only promotes the polycondensation reaction rate, but also Si-OH and Si The polycondensation reaction between -OH is also promoted. If the surface treatment composition contains a metal compound, the reduction reaction of the metal compound is promoted.
상기 염기성 수용액은 유기 염기와 물을 혼합하여 제조된다. 이 때 유기 염기로는 물과 섞일 수 있는 염기라면 모두 다 사용가능한데, 아민계 화합물을 사용하는 것이 바람직하다.The basic aqueous solution is prepared by mixing an organic base and water. In this case, any base that can be mixed with water may be used as the organic base, but it is preferable to use an amine compound.
본 발명에 따른 표시소자용 표면처리막은 표시소자 특히 음극선관의 정전기방지막, 전자파 차폐막 및 외광반사막으로서 사용가능하다.The surface treatment film for display elements according to the present invention can be used as an antistatic film, an electromagnetic wave shielding film and an external light reflecting film of a display device, in particular a cathode ray tube.
이하, 본 발명을 실시예를 들어 상세히 설명하기로 하되, 본 발명이 하기 실시예로만 한정되는 것은 아니다.Hereinafter, the present invention will be described in detail with reference to Examples, but the present invention is not limited only to the following Examples.
<실시예 1><Example 1>
에틸 알콜 160.5g, 메틸 알콜 123g 및 안티몬 도핑된 티타늄 산화물(Atimony doped Titanium Oxide: ATO) 미립자를 혼합하고, 여기에 테트라에틸오르토실리케이트 13.5g과 순수 29g을 첨가하여 반응시켰다. 이어서, 60℃에서 1시간동안 숙성하여 졸을 준비하였다.160.5 g of ethyl alcohol, 123 g of methyl alcohol and fine particles of Antimony doped Titanium Oxide (ATO) were mixed, and 13.5 g of tetraethylorthosilicate and 29 g of pure water were added thereto to react. Subsequently, the sol was prepared by aging at 60 ° C. for 1 hour.
깨끗하게 세정된 15" 모니터용 음극선관을 예열하여 음극선관의 표면온도를 약 100℃로 조절한 다음, 상기 졸을 스프레이 코팅하였다.A clean, cleaned 15 "monitor cathode ray tube was preheated to adjust the surface temperature of the cathode ray tube to about 100 ° C. and then the sol was spray coated.
이와 별도로, 순수가 담긴 용기에 스프레이 건(spray gun)을 연결하여 미세한 순수 액적이 분사될 수 있는 장치를 마련하였다. 이 장치를 이용하여 음극선관 표면상에 순수 액적을 분사하였다. 이로써 순수는 음극선관 표면에서 수증기로 기화되었다.Separately, a spray gun was connected to a container containing pure water to prepare a device capable of spraying fine pure liquid droplets. Pure water droplets were injected onto the surface of the cathode ray tube using this apparatus. Thus, pure water was vaporized with water vapor at the surface of the cathode ray tube.
그 후, 수증기 처리된 음극선관을 약 120℃로 소성하여 논-글레어 대전방지막을 얻었다.Thereafter, the steam-treated cathode ray tube was fired at about 120 ° C. to obtain a non-glare antistatic film.
상기 논-글레어 대전방지막의 저항은 6×109Ω/□이었고, 연필경도는 9H였다.The resistance of the non-glare antistatic film was 6 × 10 9 Pa / s, and the pencil hardness was 9H.
<실시예 2><Example 2>
입경이 약 80㎚인 주석 도핑된 인듐 산화물(Tin doped Indium Oxide: ITO) 미립자 2.5g을 메탄올 20g, 에탄올 67.5g 및 부탄올 10g의 혼합용매에 분산시켜 도포액 A를 제조하였다.Coating solution A was prepared by dispersing 2.5 g of tin doped indium oxide (ITO) particles having a particle diameter of about 80 nm in a mixed solvent of 20 g of methanol, 67.5 g of ethanol, and 10 g of butanol.
테트라에틸오르토실리케이트 4.5g을 메탄올 30g, 에탄올 50g, 부탄올 12g 및 순수 4g의 혼합용매에 혼합한 다음, 실온에서 약 24시간동안 교반하여 도포액 B를 제조하였다.4.5 g of tetraethylorthosilicate was mixed with a mixed solvent of 30 g of methanol, 50 g of ethanol, 12 g of butanol, and 4 g of pure water, followed by stirring at room temperature for about 24 hours to prepare a coating solution B.
깨끗하게 세정된 17" 모니터용 음극선관을 약 90rpm으로 회전시키면서 상기 도포액 A 50㏄를 붓고, 음극선관의 회전속도를 약 150rpm으로 상승시켰다. 그리고 나서, 도포액 A가 코팅된 음극선관에 도포액 B 60㏄를 붓고 도포액 A와 동일한 방법으로 도포하였다. 이어서, 상기 음극선관을 100℃로 예열한 다음, 실리카를 스프레이 코팅하였다.The coating liquid A 50 kPa was poured while the clean 17 "monitor cathode ray tube was rotated at about 90 rpm, and the rotation speed of the cathode ray tube was increased to about 150 rpm. Then, the coating liquid was coated on the cathode ray tube coated with the coating liquid A. P 60 B was poured and applied in the same manner as coating liquid A. The cathode ray tube was then preheated to 100 ° C., and then silica coated with silica.
이와 별도로, 순수가 담긴 용기에 스프레이 건(spray gun)을 연결하여 미세한 순수 액적이 분사될 수 있는 장치를 마련하였다. 이 장치를 이용하여 음극선관 표면상에 순수 액적을 분사하였다. 이로써 순수는 음극선관 표면에서 수증기로 기화되었다.Separately, a spray gun was connected to a container containing pure water to prepare a device capable of spraying fine pure liquid droplets. Pure water droplets were injected onto the surface of the cathode ray tube using this apparatus. Thus, pure water was vaporized with water vapor at the surface of the cathode ray tube.
그 후, 수증기 처리된 음극선관을 약 150℃로 소성하여 반사방지 대전방지막을 형성하였다.Thereafter, the steam-treated cathode ray tube was fired at about 150 ° C. to form an antireflective antistatic film.
상기 반사방지 대전방지막의 저항은 1.0×105Ω /□이었고, 연필경도는 9H였다.The resistance of the antireflective antistatic film was 1.0 × 10 5 Pa / □, and the pencil hardness was 9H.
<실시예 3><Example 3>
입경이 약 80㎚인 ITO 미립자 2.5g을 메탄올 20g, 에탄올 67.5g 및 부탄올 10g의 혼합용매에 분산시켜 도포액 A를 제조하였다.2.5 g of ITO fine particles having a particle size of about 80 nm were dispersed in a mixed solvent of 20 g of methanol, 67.5 g of ethanol, and 10 g of butanol to prepare a coating solution A.
테트라에틸오르토실리케이트 4.5g과 질산은 0.0036g을 메탄올 30g, 에탄올 50g, 부탄올 12g 및 순수 4g의 혼합용매에 혼합한 다음, 실온에서 약 24시간동안 교반하여 도포액 B를 제조하였다.4.5 g of tetraethylorthosilicate and 0.0036 g of silver nitrate were mixed in a mixed solvent of 30 g of methanol, 50 g of ethanol, 12 g of butanol, and 4 g of pure water, followed by stirring at room temperature for about 24 hours to prepare a coating solution B.
깨끗하게 세정된 17" 모니터용 음극선관을 약 90rpm으로 회전시키면서 상기 도포액 A 50㏄를 붓고, 음극선관의 회전속도를 약 150rpm으로 상승시켰다. 그리고 나서, 도포액 A가 코팅된 음극선관에 도포액 B 60㏄를 붓고 도포액 A와 동일한 방법으로 도포하였다. 이어서, 상기 음극선관을 100℃로 예열한 다음, 실리카를 스프레이 코팅하였다.The coating liquid A 50 kPa was poured while the clean 17 "monitor cathode ray tube was rotated at about 90 rpm, and the rotation speed of the cathode ray tube was increased to about 150 rpm. Then, the coating liquid was coated on the cathode ray tube coated with the coating liquid A. P 60 B was poured and applied in the same manner as coating liquid A. The cathode ray tube was then preheated to 100 ° C., and then silica coated with silica.
이와 별도로, 히드라진 수용액이 담긴 용기에 스프레이 건(spray gun)을 연결하여 미세한 히드라진 수용액 액적이 분사될 수 있는 장치를 마련하였다. 이 장치를 이용하여 음극선관 표면상에 히드라진 수용액 액적을 분사하였다.Separately, a spray gun was connected to a container containing an aqueous hydrazine solution to prepare a device capable of spraying fine hydrazine solution droplets. Using this apparatus, droplets of aqueous hydrazine solution were sprayed onto the surface of the cathode ray tube.
그 후, 음극선관을 150∼200℃로 소성하여 반사방지 대전방지막을 형성하였다.Thereafter, the cathode ray tube was baked at 150 to 200 캜 to form an antireflective antistatic film.
상기 반사방지 대전방지막의 저항은 5.0×103Ω /□이었고, 연필경도는 9H였다.The resistance of the antireflective antistatic film was 5.0 × 10 3 Pa / □, and the pencil hardness was 9H.
<비교예 1>Comparative Example 1
순수 액적을 스프레이 분사하는 과정을 거치지 않고 소성온도가 250℃인 것을 제외하고는, 실시예 1과 동일한 방법에 따라 실시하였다.The same process as in Example 1 was carried out except that the firing temperature was 250 ° C. without undergoing spray spraying of pure water droplets.
상기 과정에 따라 제조된 안티-글레어막의 저항은 7.0×109Ω /□이었고, 연필경도는 8H였다.The resistance of the anti-glare film prepared according to the above procedure was 7.0 × 10 9 Pa / □, and the pencil hardness was 8H.
<비교예 2>Comparative Example 2
순수 액적을 스프레이 분사하는 과정을 거치지 않고 소성온도가 250℃인 것을 제외하고는, 실시예 2와 동일한 방법에 따라 실시하였다.The same process as in Example 2 was carried out except that the firing temperature was 250 ° C. without undergoing spray spraying of pure water droplets.
상기 과정에 따라 제조된 안티-글레어막의 저항은 1.3×105Ω /□이었고, 연필경도는 8H였다.The resistance of the anti-glare film prepared according to the above procedure was 1.3 × 10 5 Pa / □, and the pencil hardness was 8H.
<비교예 3>Comparative Example 3
히드라진 수용액 액적을 스프레이 분사하는 과정을 거치지 않고 소성온도가 250℃인 것을 제외하고는, 실시예 3과 동일한 방법에 따라 실시하였다.The firing was carried out according to the same method as in Example 3, except that the firing temperature was 250 ° C. without undergoing spray spraying of the hydrazine aqueous solution droplets.
상기 과정에 따라 제조된 반사방지 대전방지막의 저항은 7.5×103Ω /□이었고, 연필경도는 8H였다.The antireflective antistatic film prepared according to the above procedure was 7.5 × 10 3 × / □, and the pencil hardness was 8H.
이상에서 살펴본 바와 같이, 상기 실시예 1-3에 따라 제조된 표면처리막은대응하는 비교예 1-3의 경우에 비하여 훨씬 낮은 온도에서 소성처리하고서도 저항 및 막경도(연필경도) 특성이 보다 우수하였다.As described above, the surface treatment film prepared according to Example 1-3 had better resistance and film hardness (pencil hardness) characteristics even after firing at a much lower temperature than that of the corresponding Comparative Example 1-3. .
본 발명에 따르면, 저온소성공정으로도 도전성 및 막경도 특성이 우수한 표면처리막을 형성할 수 있다. 따라서 고온소성과정에서 수반되는 여러 가지 문제점을 해결할 수 있는 동시에 제조비용 및 시간이 절감된다.According to the present invention, it is possible to form a surface treatment film having excellent conductivity and film hardness properties even at a low temperature baking process. Therefore, various problems associated with high temperature firing process can be solved and manufacturing cost and time can be saved.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR910016880A (en) * | 1990-03-31 | 1991-11-05 | 김정배 | Anti-glare and antistatic transparent coating composition, method for manufacturing the same, and image display coating the coating composition |
| JPH04218247A (en) * | 1990-05-14 | 1992-08-07 | Hitachi Ltd | Cathode ray tube and manufacture thereof |
| KR930014743A (en) * | 1991-12-20 | 1993-07-23 | 김정배 | Manufacturing method of coating film of cathode ray tube |
| JPH05198261A (en) * | 1991-07-10 | 1993-08-06 | Samsung Display Devices Co Ltd | Manufacture of cathode-ray tube |
| KR960002457A (en) * | 1994-06-16 | 1996-01-26 | 가네꼬 히사시 | Method of manufacturing cathode ray tube |
| KR19980086911A (en) * | 1997-05-12 | 1998-12-05 | 나카네 히사시 | Method of Forming Silica Film on Substrate Surface |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR910016880A (en) * | 1990-03-31 | 1991-11-05 | 김정배 | Anti-glare and antistatic transparent coating composition, method for manufacturing the same, and image display coating the coating composition |
| JPH04218247A (en) * | 1990-05-14 | 1992-08-07 | Hitachi Ltd | Cathode ray tube and manufacture thereof |
| JPH05198261A (en) * | 1991-07-10 | 1993-08-06 | Samsung Display Devices Co Ltd | Manufacture of cathode-ray tube |
| KR930014743A (en) * | 1991-12-20 | 1993-07-23 | 김정배 | Manufacturing method of coating film of cathode ray tube |
| KR960002457A (en) * | 1994-06-16 | 1996-01-26 | 가네꼬 히사시 | Method of manufacturing cathode ray tube |
| KR19980086911A (en) * | 1997-05-12 | 1998-12-05 | 나카네 히사시 | Method of Forming Silica Film on Substrate Surface |
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