JPH0846083A - Hybrid integrated circuit device - Google Patents
Hybrid integrated circuit deviceInfo
- Publication number
- JPH0846083A JPH0846083A JP17918894A JP17918894A JPH0846083A JP H0846083 A JPH0846083 A JP H0846083A JP 17918894 A JP17918894 A JP 17918894A JP 17918894 A JP17918894 A JP 17918894A JP H0846083 A JPH0846083 A JP H0846083A
- Authority
- JP
- Japan
- Prior art keywords
- conductive pad
- conductive
- shape
- integrated circuit
- circuit device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05553—Shape in top view being rectangular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4007—Surface contacts, e.g. bumps
Landscapes
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は混成集積回路装置に関
し、特に銅(Cu)の配線パターンにボンディング性を
考慮してニッケル(Ni)膜を施した際、このNiによ
る髭が原因である短絡の発生防止に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a hybrid integrated circuit device, and in particular, when a nickel (Ni) film is formed on a copper (Cu) wiring pattern in consideration of bonding property, short circuit caused by the beard due to Ni is caused. It is related to prevention of occurrence of.
【0002】[0002]
【従来の技術】一般に混成集積回路装置には、低抵抗で
あるが故にCuをよく使うことがある。しかしこのCu
は、酸化されやすくまた熱伝導率が大きいことからボン
ディング性が悪い等の欠点を有し、そのために表面にN
iを施すことが一般的である。これらの公知技術とし
て、特願平5−295722号が詳しく、例えば図4を
参照して以下に説明して行く。例えば絶縁性を有する基
板(1)に所望の回路を達成するための導電路(2)が
形成され、この導電路(2)またはこれと一体でなる導
電パッドに半導体チップやチップ抵抗等が実装され、ま
たこの半導体チップと導電パッドの間等に金属細線によ
って電気的接続が達成され、前記回路が実現されてい
る。2. Description of the Related Art Generally, Cu is often used in a hybrid integrated circuit device because of its low resistance. But this Cu
Has a drawback in that it is apt to be oxidized and has a high thermal conductivity and thus has a poor bonding property.
It is common to apply i. Japanese Patent Application No. 5-295722 is a detailed known technology, and will be described below with reference to FIG. 4, for example. For example, a conductive path (2) for achieving a desired circuit is formed on an insulating substrate (1), and a semiconductor chip, a chip resistor, etc. are mounted on the conductive path (2) or a conductive pad integrated with the conductive path (2). In addition, electrical connection is achieved between the semiconductor chip and the conductive pad by a thin metal wire, and the circuit is realized.
【0003】ここでは基板(1)としてはAl金属によ
り成り、表面を陽極酸化して酸化アルミニウム(3)を
生成し、導電路との接着性を考えエポキシ系の樹脂
(4)がその全面に被着されている。前記構成におい
て、Cu(5)の酸化防止や金属細線のボンディング性
を考慮してその表面にNi(6)がメッキされている。Here, the substrate (1) is made of Al metal, the surface is anodized to form aluminum oxide (3), and an epoxy resin (4) is formed on the entire surface in consideration of adhesiveness with a conductive path. It is covered. In the above structure, Ni (6) is plated on the surface in consideration of the oxidation prevention of Cu (5) and the bonding property of the fine metal wire.
【0004】一方、エッチングとしては、ドライエッチ
とウェットエッチングの2通りが有るがスループットを
考えてウェットがその主流となっている。一般に数μm
〜数十μmの金属をドライで行った場合、数時間以上か
かるものが、シャワー式のウェットエッチングで行えば
数分〜数十分程度でエッチングできるからである。特に
全面またはその一部のCuに、Niを被着し、塩化第2
鉄(FeCl3)のエッチャントでウェットエッチング
をした場合、Cuの方がエッチングレートが大きいた
め、図4のようにNiの庇(7)が形成される。On the other hand, there are two types of etching, dry etching and wet etching, but wet is the mainstream in consideration of throughput. Generally several μm
This is because, when a metal having a thickness of up to several tens of μm is dried, it takes several hours or more, but a shower-type wet etching can be performed in a few minutes to several tens of minutes. In particular, Ni is deposited on the entire surface or a part of Cu to form a second chloride.
When wet etching is performed with an etchant of iron (FeCl3), since Cu has a higher etching rate, Ni eaves (7) are formed as shown in FIG.
【0005】[0005]
【発明が解決しようとする課題】製造工程中において、
レジストゴミやその他のゴミが付着するための除去、お
よびNi表面が平らであるためボンディング性の向上を
考えてブラッシングが行われる。つまりこのブラッシン
グによりゴミは除去され、Niの表面は粗面になる。[Problems to be Solved by the Invention] During the manufacturing process,
Brushing is performed in consideration of removal of resist dust and other dust to be attached and improvement of bonding property because the Ni surface is flat. In other words, this brushing removes dust and the surface of Ni becomes rough.
【0006】しかし図4のようにNiに庇が設けられて
いるため、ブラシの毛足がこの庇に当り、Niヒゲ
(8)を生成し、導電路(2)間の短絡を発生させた
り、膜剥がれ等を発生させていた。また図3は、前記混
成集積回路装置の高密度実装のために導電パッドを近接
させた時の概略図である。パッドサイズによっても異な
るが矢印でしめした間隔は、パッドの側辺と配線の間隔
を示し約100μmに設定してある。しかし導電パッド
にも庇が形成されており、やはり髭が発生し短絡してし
まう問題があった。しかも大電流用導体回路では、Cu
箔の厚さが必要とされ、導体厚さに伴いNi髭の幅が大
きくなり、短絡も多発する問題があった。つまり電流値
によりCu(5)の膜厚が35μm、70μm及び10
5μmと異なり、前記ウェットエッチングでパターン化
した場合庇の長さは、約5μm、10μmおよび15μ
mと長くなってゆく。従って大電流で高密度の混成集積
回路装置を達成しようとする場合、この髭による短絡が
非常に大きな問題となる。However, as shown in FIG. 4, since the eaves are provided on the Ni, the bristles of the brush hit the eaves to generate Ni beards (8), which causes a short circuit between the conductive paths (2). , Film peeling and the like occurred. Further, FIG. 3 is a schematic view when conductive pads are brought close to each other for high-density mounting of the hybrid integrated circuit device. Although it depends on the pad size, the interval indicated by the arrow indicates the interval between the side of the pad and the wiring and is set to about 100 μm. However, the eaves are also formed on the conductive pads, and there is a problem that whiskers are generated and short circuits occur. Moreover, in the conductor circuit for large current, Cu
There is a problem that the thickness of the foil is required, the width of the Ni whiskers increases with the thickness of the conductor, and short circuits frequently occur. That is, depending on the current value, the film thickness of Cu (5) is 35 μm, 70 μm and 10 μm.
Unlike 5 μm, the length of the eaves when patterned by the wet etching is about 5 μm, 10 μm and 15 μm.
It becomes longer with m. Therefore, when attempting to achieve a high-current, high-density hybrid integrated circuit device, this short circuit due to whiskers becomes a very serious problem.
【0007】[0007]
【課題を解決するための手段】本発明は前述の課題に鑑
みて成され、第1として、導電パッドを、形状が非直線
により構成された形状にする事で解決するものである。
第2に、前記導電パッドの形状を、円または楕円にする
ことで解決するものである。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and the first problem is to solve the problem by forming the conductive pad into a non-linear shape.
Secondly, the problem is solved by making the shape of the conductive pad into a circle or an ellipse.
【0008】[0008]
【作用】第1に、電パッドの形状を、非直線で形成する
事により、ブラシの毛足の当接領域を点にする事がで
き、当接による膜剥がれを防止できる。たとえば図1に
於いて、ブラシの回転方向が、紙面の上下方向に回転す
るとすれば、バッドの側辺が直線であれば、この側辺
は、常時毛足と当接している。従って膜剥がれの原因と
なる力が常時Niに働くが、パッドの形状が非直線であ
れば、当接領域は一点となるので、膜剥がれの原因とな
る力は大幅に小さくできる。しかもパッドを円にすれ
ば、図1に示す矢印Aの所が一番最短距離で、それ以外
はこの距離Aよりも長くなる。従って、Aの長さの髭が
発生しても、短絡するところは矢印の所であり、それ以
外の所は短絡を防止できる効果がある。First, by forming the shape of the electric pad to be non-linear, the contact area of the bristles of the brush can be set as a point, and film peeling due to contact can be prevented. For example, in FIG. 1, assuming that the brush rotates in the vertical direction of the paper, if the side of the pad is a straight line, this side is always in contact with the bristle. Therefore, the force that causes the film peeling always acts on Ni, but if the shape of the pad is non-linear, there is only one contact area, so the force that causes the film peeling can be greatly reduced. Moreover, if the pad is formed into a circle, the position of the arrow A shown in FIG. 1 is the shortest distance, and other than that, it is longer than this distance A. Therefore, even if a beard having a length of A occurs, the short circuit is at the position of the arrow, and the other parts are effective in preventing the short circuit.
【0009】第2に、導電パッドの形状を円または楕円
とすることで、前述したように毛足の接触は点接触とな
り、しかも面積が確保できるため金属細線のワイヤーボ
ンディングも可能となる。Secondly, by making the shape of the conductive pad a circle or an ellipse, the contact of the fluff is point contact as described above, and since the area can be secured, wire bonding of fine metal wires is also possible.
【0010】[0010]
【実施例】以下に本発明の混成集積回路装置を図1およ
び図2を参照しながら説明する。まず図4に示すよう
に、少なくともその表面が絶縁性を有する基板(1)が
あり、この上には導電路(2)が形成される。この基板
(1)は、ここではAl基板よりなり、その表面は陽極
酸化により酸化アルミニウム(3)が生成され、更に導
電路(2)との接着性を考えて、エポキシ系の樹脂
(4)が被膜されている。しかし少なくとも表面が絶縁
処理されていればよく、他の方法(例えばスパッタリン
グ等)で直接導電路を成膜できるのであれば、セラミッ
ク、プリント基板またはガラス基板等に導電材料を被着
して良い。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A hybrid integrated circuit device according to the present invention will be described below with reference to FIGS. First, as shown in FIG. 4, there is a substrate (1) at least the surface of which has an insulating property, on which a conductive path (2) is formed. This substrate (1) is made of an Al substrate here, aluminum oxide (3) is produced on the surface by anodic oxidation, and the epoxy resin (4) is considered in consideration of the adhesiveness with the conductive path (2). Is coated. However, at least the surface should be insulated, and if a conductive path can be directly formed by another method (for example, sputtering), a conductive material may be deposited on a ceramic, a printed circuit board, a glass substrate or the like.
【0011】前記導電路(2)は、2層構造で成り、下
層の第1の導電路(5)は、例えばCuよりなる金属で
形成され、ここでは35μmの厚さでこの導電路(2)
の主となる。また第1の導電路(5)上には、数μm〜
10μm程度、実際ここでは5μmのNiより成る第2
の導電路(6)が被着されている。また図は、ボンディ
ング性や高密度を考えて、ボンディングパッドが一領域
に集積した状態のものを示したものである。The conductive path (2) has a two-layer structure, and the lower first conductive path (5) is made of a metal such as Cu. Here, the conductive path (2) has a thickness of 35 μm. )
Become the master of. Further, on the first conductive path (5), several μm to
The second is made of Ni of about 10 μm, actually 5 μm here.
Of the conductive paths (6) are applied. Further, the figure shows a state in which the bonding pads are integrated in one region in consideration of the bonding property and the high density.
【0012】本発明の第1の特徴は、導電パッド(1
0)の形状、つまり非直線で成る形状にある。従来の導
電パッドの形状は、図3に示すように方形状であり、こ
の方形形状の相対向する側辺と平行な方向にブラシが回
転すると、この平行な側辺に当接する確率は非常に高い
が、例えば円や楕円の形状であれば、ブラシの回転方向
がどの方向であれ、当接する領域は一点であり、従来の
形状よりもブラシの毛足の当接確率をかなり低下させる
ことができる。A first feature of the present invention is that the conductive pad (1
0), that is, a non-linear shape. The conventional conductive pad has a rectangular shape as shown in FIG. 3, and when the brush rotates in a direction parallel to the opposite sides of this rectangular shape, the probability of contact with the parallel sides is very high. Although it is high, if it is in the shape of a circle or an ellipse, there is only one contact area regardless of the brush rotation direction, and the contact probability of the bristles of the brush can be significantly reduced compared to the conventional shape. it can.
【0013】また図1に示すように、矢印Aの間隔は、
導電パッドと右隣の配線の最短距離を示すものである。
髭はどこに発生するか不明だが、この矢印の所に発生す
る髭が距離Aよりも短ければ、他のパッド周辺の距離
は、其れよりも長いために全く問題ない。また矢印Aの
箇所以外は、右隣の配線からどんどん離れていくので、
髭の長さにも依るが隣の配線との接触は減少する。Further, as shown in FIG. 1, the distance between the arrows A is
It shows the shortest distance between the conductive pad and the wiring on the right side.
It is unknown where the beard occurs, but if the beard generated at this arrow is shorter than the distance A, the distance around the other pads is longer than that and there is no problem. Also, except for the part indicated by the arrow A, it is getting more and more away from the wiring on the right,
Depending on the length of the beard, contact with the adjacent wiring is reduced.
【0014】次に製造方法を簡単に説明する。まず金属
基板(1)を用意し、その表面を陽極酸化して酸化アル
ミニウム(3)を形成し、エポキシ系の樹脂(4)を成
膜した後、この樹脂の接着性を利用して、全面にCu箔
(5)をプレス接着し、更にこの全表面にNi層(6)
をメッキにより成膜している。続いて、ホトリソグラフ
ィ技術により、導電路(2)を形成する領域にホトレジ
ストを成膜し、被エッチング面に常時新しいエッチャン
トが供給されるようにしてウェットエッチングする。こ
の新しいエッチャントを被エッチング面に供給すると同
時に、反応物を取り除くためにエッチャントに流れを与
える方式を、ここでは強制供給法と仮称する。この方法
は、シャワー、液層内を循環させる方法等色々考えら
れ、ここで従来方法のエッチャントは塩化第2鉄であ
り、強制循環方式としてシャワーを採用した。塩化第2
鉄のエッチングレートRは、R(Cu)>R(Ni)で
あるため、図4にも示したような庇(7)ができた状態
で第1の導電路(5)と第2の導電路(6)が形成され
る。Next, the manufacturing method will be briefly described. First, a metal substrate (1) is prepared, the surface thereof is anodized to form aluminum oxide (3), an epoxy resin (4) is formed, and then the entire surface of the metal substrate is used by utilizing the adhesiveness of this resin. Cu foil (5) is press-bonded to the surface, and Ni layer (6) is further formed on the entire surface.
Is formed by plating. Then, a photoresist is formed in a region where the conductive path (2) is to be formed by photolithography, and wet etching is performed so that a new etchant is constantly supplied to the surface to be etched. The method of supplying this new etchant to the surface to be etched and at the same time giving a flow to the etchant to remove the reactant is tentatively referred to as a forced supply method. This method can be variously considered, such as a shower and a method of circulating in a liquid layer. Here, the etchant of the conventional method is ferric chloride, and the shower was adopted as a forced circulation method. Second chloride
Since the etching rate R of iron is R (Cu)> R (Ni), the first conductive path (5) and the second conductive path (5) can be formed with the eaves (7) as shown in FIG. A path (6) is formed.
【0015】最後には、説明を簡単にするが、Ni膜の
粗面化および塵の除去のためにブラッシングを行って
も、従来の構造と異なり、膜剥がれを無くすことができ
る。その後、図面では省略したが、チップ抵抗、半導体
チップ等が固着され、必要箇所に金属細線(11)ワイ
ヤーボンドされて所定の回路が達成される。更に必要に
よってリードの接続や樹脂モールドまたはケースの取り
つけが行われて完成される。Finally, to simplify the explanation, even if brushing is performed for roughening the Ni film and removing dust, the film peeling can be eliminated unlike the conventional structure. After that, although not shown in the drawing, a chip resistor, a semiconductor chip, and the like are fixed, and a metal thin wire (11) is wire-bonded to a necessary portion to achieve a predetermined circuit. If necessary, leads are connected and a resin mold or a case is attached to complete the process.
【0016】[0016]
【発明の効果】以上の説明からも明らかなように、第1
に、導電パッドを非直線で形成することにより、ブラシ
の毛足は一点でしか当接しないため、従来の方形形状と
比較して大幅にNi髭を抑止できる。また実施例では説
明を省略したが、従来構造において、非直線で形成して
も効果はある。つまり庇は形成されているが、毛足の当
接領域は一点であるため、髭の発生は抑止できる。As is apparent from the above description, the first
In addition, by forming the conductive pad in a non-straight line, since the bristles of the brush contact only at one point, Ni whiskers can be significantly suppressed as compared with the conventional square shape. Further, although the description is omitted in the embodiment, it is effective even if the conventional structure is formed in a non-straight line. In other words, although the eaves are formed, the contact area of the fluff is only one point, so that the beard can be prevented from occurring.
【0017】また円形の導電パッドであるため最短距離
は一点であり、それ以外はだんだんと遠くなるため、短
絡の確率が距離が長くなるにつれて小さくなる。第2
に、形状として、円や楕円を用いれば、比較的大きな面
積を必要とするボンデイングエリアを確保することがで
きるので、良好にワイヤーボンディングする事ができ
る。Further, since it is a circular conductive pad, the shortest distance is one point, and other points are gradually longer, so that the probability of short circuit becomes smaller as the distance becomes longer. Second
In addition, if a circle or an ellipse is used as the shape, a bonding area that requires a relatively large area can be secured, so that good wire bonding can be performed.
【図1】本発明の実施例を説明する図である。FIG. 1 is a diagram illustrating an example of the present invention.
【図2】図1の導電パッドを採用したパターン図であ
る。FIG. 2 is a pattern diagram in which the conductive pad of FIG. 1 is adopted.
【図3】従来の導電パッドの図である。FIG. 3 is a diagram of a conventional conductive pad.
【図4】従来の問題点を説明する斜視図である。FIG. 4 is a perspective view illustrating a conventional problem.
1 基板 2 導電路 5 第1の導電路 6 第2の導電路 10 導電パッド 11 金属細線 1 Substrate 2 Conductive Path 5 First Conductive Path 6 Second Conductive Path 10 Conductive Pad 11 Thin Metal Wire
───────────────────────────────────────────────────── フロントページの続き (72)発明者 坂野 純 大阪府守口市京阪本通2丁目5番5号 三 洋電機株式会社内 (72)発明者 高草木 貞道 大阪府守口市京阪本通2丁目5番5号 三 洋電機株式会社内 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Jun Sakano 2-5-5 Keihan Hondori, Moriguchi-shi, Osaka Sanyo Electric Co., Ltd. (72) Inventor Sadamichi Takasagi 2-chome, Keihanhondori, Moriguchi-shi, Osaka No. 5 Sanyo Electric Co., Ltd.
Claims (2)
と、この基板の表面に形成された銅より成る第一の導電
路および導電パッドと、前記導電路と電気的に接続され
て前記基板に固着された受動素子および能動素子と、少
なくとも受動素子または能動素子のいずれか一方と前記
導電パッドを電気的に接続する金属細線とを少なくとも
有する混成集積回路装置に於いて、 前記導電パッドは、形状が非直線により構成された形状
であることを特徴とした混成集積回路装置。1. A substrate having at least a surface of insulation, a first conductive path and a conductive pad made of copper formed on the surface of the substrate, and electrically connected to the conductive path and fixed to the substrate. A passive element and an active element, and at least one of the passive element or the active element and a thin metal wire that electrically connects the conductive pad, the conductive pad has a shape A hybrid integrated circuit device having a shape constituted by non-linear lines.
によりなる請求項1記載の混成集積回路装置。2. The hybrid integrated circuit device according to claim 1, wherein the conductive pad has a shape of a circle or an ellipse.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17918894A JP2989478B2 (en) | 1994-07-29 | 1994-07-29 | Hybrid integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17918894A JP2989478B2 (en) | 1994-07-29 | 1994-07-29 | Hybrid integrated circuit device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0846083A true JPH0846083A (en) | 1996-02-16 |
JP2989478B2 JP2989478B2 (en) | 1999-12-13 |
Family
ID=16061483
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17918894A Expired - Lifetime JP2989478B2 (en) | 1994-07-29 | 1994-07-29 | Hybrid integrated circuit device |
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JP (1) | JP2989478B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EA029310B1 (en) * | 2012-10-24 | 2018-03-30 | Мицубиси Хэви Индастриз Инвайронментал Энд Кемикал Инджиниринг Ко., Лтд. | Device for monitoring inside of high-temperature furnace, and system for monitoring inside of high-temperature furnace provided with same |
-
1994
- 1994-07-29 JP JP17918894A patent/JP2989478B2/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EA029310B1 (en) * | 2012-10-24 | 2018-03-30 | Мицубиси Хэви Индастриз Инвайронментал Энд Кемикал Инджиниринг Ко., Лтд. | Device for monitoring inside of high-temperature furnace, and system for monitoring inside of high-temperature furnace provided with same |
Also Published As
Publication number | Publication date |
---|---|
JP2989478B2 (en) | 1999-12-13 |
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