JPH0845823A - Exposure device and its method - Google Patents

Abstract

PURPOSE:To perform the exposure of a large-size substrate with high accuracy and high throughput by dividing a pattern formed in the substrate and moving the divided region relatively to the photomask of the substrate so that the divided region is located in the mask region of the photomask. CONSTITUTION:A pattern formed in a substrate is divided into 1/2 to 1/4. The divided regions are symmetrical to a line or a point to each other. At first, a substrate 2 is moved relatively to a photomask 10 so that the first divided region of the exposure regions of the transparent substrate 2 is located in the mask region of the photomask. The light from a light source for exposure is applied to the first divided region through the photomask 10 to perform the exposure of the first divided region.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus and method for making a color filter of a liquid crystal display (LCD), for example.

[0002]

2. Description of the Related Art Generally, exposure methods include a batch exposure method and a stepper (divided exposure) method. The batch exposure type exposure apparatus is mainly used for manufacturing a color filter of LCD, uses parallel light, and has a uniform illuminance distribution.
Good throughput. In this batch exposure type exposure apparatus, a proximity exposure apparatus in which a constant gap is provided between a glass substrate and a photomask is predominant in order to prevent a decrease in yield due to consumption and contamination of the photomask. . As the material of such a photomask, soda glass, low expansion glass or quartz is generally used. As such a batch exposure type exposure apparatus, there is one currently available for a glass substrate having an effective area of about 500 mm square at the maximum, and the resolution is 5 to 10 μm.
m, and the auto alignment accuracy is ± 2 μm or less. Further, in the batch exposure type exposure apparatus, the single exposure time may be as long as about 100 seconds.

On the other hand, a stepper type exposure apparatus is generally used for exposing a TFT side substrate of an LCD, and divides the entire exposure target area into several tens and sequentially exposes the divided areas. Such an exposure apparatus generally has a high resolution of about 3 μm, good reproducibility of alignment, and a seam deviation of 2.0 μm or less.

[0004]

However, in the above-mentioned batch exposure type exposure apparatus, when an attempt is made to expose a glass substrate having an effective area larger than 500 mm square, it is technically necessary to produce a photomask having a size corresponding to the glass substrate. Or there is a problem that it is economically difficult. That is, when soda glass of 500 mm square or more is selected as the material for the photomask, the thermal expansion coefficient α of the soda glass is as large as about 81 × 10 ⁻⁷ , so that only low accuracy can be obtained, and the warpage due to bending increases. It is difficult to handle. If low-expansion glass with a size of 500 mm square or more is selected as the material for the photomask, bubbles are generated during the production of the photomask, which is technically impossible. In addition, the material of the photomask is 500
If quartz glass with a size of mm square or more is selected, it will be very expensive, and moreover, it will be warped due to bending and it will be difficult to handle.

Further, the above-mentioned stepper type exposure apparatus has a problem that it is not suitable for exposure of a large glass substrate although it has a high resolution. That is, in order to obtain high resolution, it is necessary to reduce the exposure area, and the number of exposures increases accordingly. However, when exposing a large glass substrate having an effective area of about 500 mm square, high resolution is required. However, there is a problem in that the number of exposures becomes too large and the throughput becomes extremely low.

The present invention has been made in view of the above-mentioned problems of the prior art, and provides an exposure apparatus and method capable of performing exposure of a large glass substrate with high accuracy and high throughput.

[0007]

In order to solve the above-mentioned problems of the prior art and achieve the above-mentioned object, the exposure apparatus of the present invention is an exposure apparatus used for forming a predetermined pattern on a substrate. An apparatus comprising: a light source for exposure; and a photomask which is arranged with a constant gap with respect to the substrate and has a mask region having a size of ½ to ¼ of the entire exposure target region of the substrate, A moving unit that divides the entire exposure target region of the substrate in correspondence with the mask region and moves the substrate relative to the photomask so that the divided regions are sequentially located in the mask region. Have.

The moving means of the exposure apparatus of the present invention is preferably arranged such that after the first divided area is exposed, the second moving area is moved to the second area.
The substrate is moved in parallel with respect to the photomask so that the divided area of is located in the mask area.

Further, the moving means of the exposure apparatus of the present invention is preferably arranged such that after the first divided area is exposed,
The substrate is relatively rotated by about 180 ° about a predetermined point so that the divided area of 1 is located in the mask area.

Further, the photomask of the exposure apparatus of the present invention is preferably provided with marks for aligning each divided area of the substrate with the mask area of the photomask.

Further, the moving means of the exposure apparatus of the present invention preferably sets an area to be exposed when the first divided area is exposed by the photomask and when the second divided area is exposed. The transparent substrate is moved relative to the photomask so that there is a predetermined overlap.

The exposure method of the present invention is an exposure method performed to form a predetermined pattern on a substrate, and has a size of 1/2 to 1/4 of the entire exposure target area of the substrate. Using a photomask having a mask region, after exposing a first divided region having a size obtained by dividing the entire exposure target region corresponding to the mask region, the substrate is moved relative to the photomask. Exposing a second divided area of the entire exposure target area of the substrate.

In the exposure method of the present invention, preferably,
After exposing the first divided region, the substrate is moved in parallel relative to the photomask so that the second divided region is located in the mask region.

In the exposure method of the present invention, preferably,
After exposing the first divided region, the substrate is rotated about the predetermined point by about 180 ° with respect to the photomask so that the second divided region is located in the mask region.
Rotate relatively.

In the exposure method of the present invention, preferably,
The division area and the mask area are aligned by using the mark provided on the photomask.

Further, according to the exposure method of the present invention, a predetermined overlapping portion is formed in the exposed area when the first divided area is exposed by the photomask and when the second divided area is exposed. As described above, the substrate is moved relative to the photomask.

[0017]

In the method of the present invention using the exposure apparatus of the present invention,
For example, the photomask is arranged with a certain gap with respect to the substrate on which the pattern is to be formed. The pattern formed on the substrate is divided into 1/2 to 1/4, and the divided regions are line-symmetrical or point-symmetrical to each other. First,
The substrate is moved relative to the photomask by the moving means so that the first divided region of the exposure region of the transparent substrate is located in the mask region of the photomask. When the first divided region of the substrate is located in the mask region, the light from the light source for exposure is applied to the first divided region of the substrate through the photomask to expose the first divided region. When the exposure of the first divided region is completed, the substrate is relatively translated or moved 180 degrees around the symmetry point so that the second divided region of the entire exposed region of the substrate is located in the mask region of the photomask. ° Rotate and move. Then, light from the light source for exposure is applied to the second divided region of the substrate through the photomask to expose the second divided region. When there are two or more divided areas, this operation is repeated.

[0018]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An exposure apparatus and method therefor according to embodiments of the present invention will be described below. First Embodiment FIG. 1A is a front view of a color filter substrate manufactured by using the exposure apparatus and the method according to this embodiment, and FIG.
(B) is a side view thereof. As shown in FIGS. 1A and 1B, the color filter substrate 1 in this embodiment is composed of a glass substrate 2, a black matrix 3 and a color filter 4, and is located between the color filters 4. The black matrix 3 is formed on the glass substrate 2.

The color filter substrate 1 shown in FIG. 1 is, for example, an LCD substrate having a diagonal length of 35 inches (about 900 mm) and an aspect ratio of 16: 9, and a color filter 4 is arranged thereon. The size of the effective area 5 indicating the area is 450 mm (length) × 800 mm (width). Further, in the present embodiment, the pattern formed in the effective area 5 is symmetrical with respect to the center line 6 on the left and right lines.

In the present embodiment, in the production of the color filter substrate 1 shown in FIG. 1, when exposure is performed when the black matrix 3 and the color filter 4 are formed, the entire exposure target area is divided into left and right, and the left half And the right half are exposed separately.

First, a process of performing exposure for forming a black matrix on a glass substrate using the exposure apparatus and method of this embodiment will be described. 2A and 2B are views for explaining a step of performing exposure for forming the black matrix 3 on the glass substrate 2 by using the exposure apparatus and the method thereof according to the present embodiment, and FIG. Figure 2 (B)
Is a side view when exposing the right half of the substrate that becomes the effective area 5, and FIG. 2C is a side view when exposing the left half of the substrate that becomes the effective area 5. In this embodiment, FIG.
The glass substrate 2 is exposed using the photomask 10 shown in (A) to form the black matrix 3 shown in FIG.
The photomask 10 has a striped pattern corresponding to the shape of the black matrix formed on the glass substrate 2 within a range of 450 mm (length) × 400 mm (width) corresponding to the size of one half of the effective area 5. 10a is formed. That is, the photomask 10 is 450 mm
It has a mask area of (length) × 400 mm (width). The photomask 10 having such a size can be manufactured with high precision and relatively inexpensively in terms of the technology for manufacturing the photomask.
On the photomask 10, a pattern 10b for forming an alignment mark on the glass substrate 2 is formed outside the stripe-shaped pattern region.

In the exposure apparatus of this embodiment, the glass substrate 2 is moved in parallel in the direction of arrow 11 shown in FIG. 2A along a predetermined transfer path located below the photomask 10 by using the transfer device. Can be made. At this time, the glass substrate 2 is placed below the photomask 10 and
It is located at a fixed distance D from the lower surface of the. Interval D
Is preferably 0 mm to 0.05 mm.

In this embodiment, when exposing the glass substrate 2 to form the black matrix 3, first, as shown in FIGS. 2A and 2B, the photomask 1 is formed.
So that the right half of the glass substrate 2 is located below 0,
The glass substrate 2 is moved by the transfer device.

Next, the glass substrate 2 is irradiated with UV light through the photomask 10. A film 12 serving as a black matrix and a resist film 13 are sequentially formed on the glass substrate 2. Of the resist film 13 formed on the right half of the glass substrate 2, the pattern 1 of the photomask 10 is formed.
The portions corresponding to 0a and 10b are exposed.

Next, the glass substrate 2 is translated rightward in the direction of arrow 11 to the position shown by the chain double-dashed line in FIG. 2A and the position shown in FIG.
At this time, when the glass substrate 2 is positioned as shown in FIG. 2B and when the glass substrate 2 is positioned as shown in FIG. Arrow 1
Glass substrate 2 so that it overlaps in the direction of 1 by about 2 μm or more.
Translate.

Next, the glass substrate 2 is irradiated with UV light through the photomask 10. As a result, the glass substrate 2
A part of the resist film 13 formed on the left half of the photomask 10 corresponding to the patterns 10a and 10b of the photomask 10 is exposed.

As described above, in this embodiment, after the right half of the glass substrate 2 is exposed to form the black matrix, the glass substrate 2 is translated in the direction of the arrow 11 to move the glass substrate 2 in parallel. By performing the same exposure on the left half of the
Exposure for forming a black matrix is performed on the entire surface.

In this embodiment, as described above, the resist film 13 shown in FIG. 2 is exposed, the exposed portion of the resist film 13 is left, and the film 12 is etched using the remaining resist. As shown in FIG. 4, the black matrix 3 is formed on the glass substrate 2. That is,
In this embodiment, the resist film 13 functions as a negative type resist. At the same time, the film 12 is formed on the glass substrate 2 by the pattern 10b as shown in FIG.
Alignment marks 3a, 3b corresponding to the above are formed. The alignment marks 3a and 3b are aligned with the alignment marks 31 of the photomask 30 shown in FIG. 5 when forming the color filter on the glass substrate 2, as described later.

Next, a description will be given of a process of performing exposure for forming an R (red) color filter on the glass substrate by using the exposure apparatus and the method thereof of this embodiment. FIG. 5 and FIG. 6 are views for explaining a process of performing exposure for forming the color filter 4 on the glass substrate 2 by using the exposure apparatus and the method thereof according to the present embodiment, and FIG. FIG. 5B is a side view when exposing the right half of the substrate that becomes the effective area 5, and FIG. 5C is a side view when exposing the left half of the substrate that becomes the effective area 5. . In this embodiment, as shown in FIGS. 5 and 6, when the color filter 4 (see FIG. 1) is formed on the glass substrate 2, the photomask 3 is formed.
The glass substrate 2 is exposed using 0. At this time, the black matrix 3 has already been formed on the glass substrate 2, and the film 32 and the resist film 33 which will be the R color filter are sequentially formed on the black matrix 3. The photomask 30 has a size of 450 mm (vertical) × 400 mm (horizontal) corresponding to the size of one half of the effective area 5.
In this range, a striped pattern 30a corresponding to the shape of the color filter formed on the glass substrate 2 is formed. That is, the photomask 30 is 450 mm
It has a mask area of (length) × 400 mm (width). The photomask 30 having such a size can be manufactured with high accuracy and relatively inexpensively in terms of the technology for manufacturing the photomask.

A registration mark 31 is formed on the photomask 30, and the registration mark 31 and the registration marks 3a and 3b of the glass substrate 2 shown in FIG.
And are aligned. The photomask 30 is fixed in advance at a predetermined position.

As described above, in this embodiment, the glass substrate 2
Using a photomask 30 that is about half the size of the effective area 5, the entire exposure area of the glass substrate 2 is divided into two and exposed separately, as will be described later.

In the exposure apparatus of this embodiment, the glass substrate 2 is moved in parallel in the direction of arrow 34 shown in FIG. 5A along a predetermined transfer path located below the photomask 30 using the transfer device. Let

In this embodiment, when exposing the glass substrate 2 to form the color filter 4, first,
As shown in FIGS. 5A and 5B, the glass substrate 2 is moved by the transfer device so that the right half of the glass substrate 2 is located below the photomask 30. At this time, as shown in FIGS. 5A and 6, the alignment mark 3a located on the right half of the glass substrate 2 and the alignment mark 31 of the photomask 30 are aligned.

Next, the glass substrate 2 is irradiated with UV light through the photomask 30. As a result, as shown in FIG. 6A, a portion of the resist film 33 formed on the right half of the surface of the glass substrate 2 corresponding to the pattern 30a of the photomask 30 is exposed.

Next, the glass substrate 2 is translated rightward in the direction of the arrow 34 to the position indicated by the chain double-dashed line in FIG. 5A and the position shown in FIG. At this time, as shown in FIG. 6, the alignment mark 3b formed on the glass substrate 2 shown in FIG. 3 and the alignment mark 31 of the photomask 30 are aligned. Figure 5
When the glass substrate 2 is positioned as shown in (B),
As shown in FIG. 5C, when the glass substrate 2 is positioned, the UV light-shielding portions overlap by about 2 μm or more.

Next, the glass substrate 2 is irradiated with UV light through the photomask 30. As a result, as shown in FIG. 6B, a portion of the resist film 33 formed on the left half of the surface of the glass substrate 2 corresponding to the pattern 30a of the photomask 30 is exposed.

As described above, in this embodiment, after the left half of the glass substrate 2 is exposed to form the color filter, the glass substrate 2 is moved in parallel in the direction of the arrow 34, and the glass substrate 2 is moved. By performing the same exposure on the right half of the above, the exposure for forming the color filter is performed on the entire effective area 5 of the glass substrate 2.

In this embodiment, as described above, the resist film 33 shown in FIG. 5 is exposed, the exposed portion of the resist film 33 is left, and the film 32 is etched using the remaining resist. An R color filter is formed on the glass substrate 2. That is, in this embodiment, the resist film 33 functions as a negative type resist. In this embodiment, G (green) and B are added to the glass substrate 2.
The (blue) color filter is formed in the same manner as in the case of forming the R (red) color filter described above.
A color filter substrate 1 as shown in (A) and (B) is manufactured.

As described above, according to the exposure apparatus and the method therefor of the present embodiment, when the black matrix 3 and the color filter 4 are formed on the glass substrate 2, the area of the effective area 5 of the color filter substrate 1 to be manufactured is reduced. About half of the relatively small photomasks 10 and 30 are used. Therefore, highly accurate and inexpensive photomasks 10 and 30 can be used, the mask accuracy can be improved, and the exposure can be performed with high accuracy. Further, since the exposure apparatus and the method thereof according to the present embodiment relate to the improvement of the proximity exposure apparatus and the method thereof, the number of exposures can be significantly reduced and the throughput can be improved as compared with the case where the stepper type exposure is performed. Therefore, the exposure apparatus and method of this embodiment are particularly effective when exposing a large glass substrate.

Further, according to the exposure apparatus and the method therefor of the present embodiment, by using the photomasks 10 and 30 having an area half that of the effective area 5, the illumination area of the light source for exposure can be halved. The illuminance distribution can be improved. This also enables highly accurate exposure. Further, according to the exposure apparatus and the method therefor of the present embodiment, when the black matrix 3 is formed on the glass substrate 2, the alignment marks 3a and 3b are formed at predetermined positions. Therefore, the alignment marks 3a and 3b are formed. By using, the alignment between the glass substrate 2 and the photomask 30 can be performed with high accuracy.
Furthermore, according to the exposure apparatus and the method of the present embodiment,
Since the photomasks 10 and 30 are fixed and used, damage to the photomasks 10 and 30 can be avoided.

Second Embodiment In the above-mentioned first embodiment, the exposure apparatus and method used for producing a color filter substrate in which the pattern formed in the effective area is symmetrical with respect to the center line are described. However, in this embodiment, an exposure apparatus and a method therefor used for producing a color filter substrate in which a pattern formed in the effective area is point-symmetric with respect to the center point (intersection point of diagonal lines) of the glass substrate will be described. .

FIG. 7 is a front view for explaining a color filter substrate manufactured by using the exposure apparatus and the method according to this embodiment. As shown in FIG. 7, the color filter substrate 41 according to the present embodiment is the same as the color filter substrate shown in FIG. 1 except that the pattern formed in the effective area 5 is point-symmetric with respect to the center point 42. Same as the substrate. The side view of the color filter substrate 41 shown in FIG. 7 is the same as the side view of the color filter substrate 1 shown in FIG.

In the present embodiment, in the production of the color filter substrate 41 shown in FIG. 7, the black matrix 3 and the color filter 4 are formed as in the case of the first embodiment described above.
At the time of formation, the entire exposure target region is divided into two parts on the left and right, and the left half and the right half are separately exposed. However, in this embodiment, unlike the above-described first embodiment, the effective area 5
After exposing the right half of the
Is rotated by 180 ° in the plane direction with respect to the center, and the left half of the effective area 5 is exposed. The reason why the glass substrate 2 is rotated in this manner is that the pattern formed in the effective area 5 is point-symmetric with respect to the center point 42 of the glass substrate 2.

First, a description will be given of a process of performing exposure for forming a black matrix on a glass substrate by using the exposure apparatus and the method thereof according to this embodiment. FIG. 8 is a diagram for explaining a step of performing exposure for forming the black matrix 3 on the glass substrate 2 by using the exposure apparatus and the method thereof according to the present embodiment, and FIG. FIG. 8 (B)
Is a side view when exposing the right half of the substrate that becomes the effective area 5, and FIG. 8C is a side view when exposing the left half of the substrate that becomes the effective area 5. In this embodiment, FIG.
As shown in (A), a photomask 1 on which the same stripe-shaped pattern 10a as the photoresist 10 shown in FIG. 2 (A) described in the first embodiment is formed.
The glass substrate 2 is exposed using 0 to form the black matrix 3. Patterns 10b and 10c for forming alignment marks for the glass substrate 2 are provided outside the stripe-shaped pattern region of the photomask 10 of this embodiment.
Is formed. The pattern 10c is formed on the photomask 10 so as to be located on the right side of the pattern 10b by the width of two lateral pitches of the color filter to be formed later. The photomask 10 is fixed in advance at a predetermined position.

In the exposure apparatus of this embodiment, the glass substrate 2 is rotationally moved below the photomask 10 using the transfer device.

In this embodiment, when exposing the glass substrate 2 to form the black matrix 3, first, as shown in FIGS. 8A and 8B, the photomask 1 is formed.
So that the right half of the glass substrate 2 is located below 0,
The glass substrate 2 is moved by the transfer device.

Next, the glass substrate 2 is irradiated with UV light through the photomask 10. A film 12 serving as a black matrix and a resist film 13 are sequentially formed on the glass substrate 2. Of the resist film 13 formed on the right half of the glass substrate 2, the pattern 1 of the photomask 10 is formed.
The portions corresponding to 0a, 10b and 10c are exposed.

Next, the glass substrate 2 is moved 180 degrees from the center point 42 shown in FIG. 7 to the position shown by the chain double-dashed line in FIG. 8A and the position shown in FIG.
° Rotate and move. At this time, when the glass substrate 2 is positioned as shown in FIG. 8B and when the glass substrate 2 is positioned as shown in FIG. Overlap by about 2 μm or more in the lateral direction.

Next, the glass substrate 2 is irradiated with UV light through the photomask 10. As a result, the glass substrate 2
A portion of the resist film 13 formed on the left half of the photomask 10 corresponding to the patterns 10a, 10b, 10c of the photomask 10 is exposed. At this time, the glass substrate 2 is shown in FIG.
As shown in FIG. 8C, since the center point 42 shown in FIG. 7 is rotated by 180 ° from the position shown in FIG. A pattern symmetrical with respect to 42 can be formed on the left half of the glass substrate 2.

As described above, in this embodiment, the exposure for forming the black matrix can be performed on the entire effective area 5 of the glass substrate 2, and the central point 42 shown in FIG. A symmetrical pattern can be formed on the left half and the right half of the glass substrate 2.

In this embodiment, as in the case of the first embodiment, after exposing the resist film 13 as shown in FIG. 8, the exposed portion of the resist film 13 is left and the remaining resist is removed. The film 12 is etched using the black matrix 3 on the glass substrate 2 as shown in FIGS. At this time, at the same time, the glass substrate 2 is patterned by the film 12 as shown in FIG.
b, 10c, alignment marks 20b, 20c,
21b and 21c are formed. These alignment marks are used to align the photomask 30 and the glass substrate 2 shown in FIGS. 10 and 11 when forming a color filter on the glass substrate 2, as described later.

Next, a description will be given of a process of performing exposure for forming an R (red) color filter on the glass substrate by using the exposure apparatus and the method thereof according to this embodiment. 10 and 1
FIG. 1 is a diagram for explaining a process of performing exposure for forming a color filter 4 on a glass substrate 2 by using the exposure apparatus and the method thereof according to the present embodiment, and FIG. 10 (B) is a side view when exposing the right half of the substrate to be the effective area 5, and FIG. 10 (C) is the effective area 5.
3 is a side view when exposing the left half of the substrate to be exposed.
In this embodiment, as shown in FIGS. 10A and 11, it has the same size as the photomask 30 shown in FIG. 5A described in the first embodiment and is formed on the glass substrate 2. Striped patterns 30a corresponding to the shapes of the color filters are formed. In addition, as shown in FIGS. 10A and 11, the photomask 30 of the present embodiment has
The alignment mark 31 is formed, and when the glass substrate 2 shown in FIG. 9 is exposed to form a color filter, the alignment mark 31 and the alignment marks 20b and 21c shown in FIG. 9 are aligned with each other. . The photomask 30 is fixed in advance at a predetermined position.

In the exposure apparatus of this embodiment, the glass substrate 2 is rotationally moved below the photomask 30 using the transfer device.

In this embodiment, when exposing the glass substrate 2 to form the color filter 4, first,
As shown in FIGS. 10A and 10B, the photomask 30
The glass substrate 2 on which the black matrix 3 has already been formed is moved by the transporting device so that the right half of the glass substrate 2 is located below. At this time, as shown in FIG.
As shown in FIG. 11, the alignment mark 20b and the photomask 3 located on the right half of the glass substrate 2 shown in FIG.
By aligning the alignment mark 31 of 0, the glass substrate 2 and the photomask 30 are aligned.

Next, the glass substrate 2 is irradiated with UV light through the photomask 30. A black matrix 3, a film 32 serving as a color filter, and a resist film 33 are sequentially formed on the glass substrate 2, and are formed on the right half of the glass substrate 2 as shown in FIG. A part of a resist film 33 corresponding to the pattern 30a of the photomask 30 is exposed.

Next, by the carrying device, as shown in FIG.
As shown in FIG. 11, after the glass substrate 2 is rotated by 180 ° about the center point 42 shown in FIG. 7, the alignment mark 21c of the glass substrate 2 and the alignment mark 31 of the photomask 30 are aligned. So that the glass substrate 2
Is translated by a width of two pitches in the horizontal direction of the color filter. As a result, the glass substrate 2 is shown in FIG.
It moves to the position of the two-dot chain line shown in and the position shown in FIG. At this time, the portion where the UV light is shielded is divided between when the glass substrate 2 is positioned as shown in FIG. 10 (B) and when the glass substrate 2 is positioned as shown in FIG. 10 (C). Overlap about 2 μm or more.

Next, the glass substrate 2 is irradiated with UV light through the photomask 30. As a result, FIG.
As shown in FIG. 3, the pattern 30 of the photomask 30 in the resist film 33 formed on the left half of the glass substrate 2 is used.
The portion corresponding to a is exposed. At this time, as shown in FIGS.
Since it is rotated 180 ° about the center point 42 shown in FIG. 7 from the position shown in FIG. 7B, the pattern formed on the right half of the glass substrate 2 and the pattern point-symmetric with respect to the center point 42 are formed. It can be formed on the left half of the glass substrate 2.

As described above, in this embodiment, after the left half of the glass substrate 2 is exposed to form the color filter, the glass substrate 2 is rotated by 180 ° about the center point 42 shown in FIG. By moving and exposing the right half of the glass substrate 2 in the same manner, exposure for forming a color filter is performed on the entire effective area 5 of the glass substrate 2.

In this embodiment, the resist film 33 shown in FIG. 10 is exposed as described above, the exposed portion of the resist film 33 is left, and the film 32 is etched using the remaining resist. An R color filter is formed on the glass substrate 2. That is, in this embodiment, the resist film 33 functions as a negative type resist. In this embodiment, G (green) and B are added to the glass substrate 2.
The (blue) color filter is formed in the same manner as in the case of forming the R (red) color filter described above, and the color filter substrate 1 as shown in FIG. 7 is manufactured.

As described above, according to the exposure apparatus and the method of this embodiment, the pattern formed in the effective area of the color filter substrate 41 is point-symmetric with respect to the center point (intersection point of diagonal lines) of the glass substrate. In the manufacturing process, the glass substrate 2 can be exposed to light to form a black matrix and color filters. Further, according to the exposure apparatus and the method therefor of the present embodiment, it is possible to obtain the same effects as in the case of the first embodiment.

In the second embodiment described above, when the color filter 4 is formed on the left half of the glass substrate 2,
Although the case where the glass substrate 2 is translated by 2 pitches of the color filter after rotating the glass substrate 2 by 180 ° is illustrated, depending on the pattern formed on the glass substrate 2, after rotating the glass substrate 2 by 180 °, The exposure may be performed without performing the parallel movement. In this case, a pair of alignment marks may be formed on each of the right half and the left half of the glass substrate 2, as in the case of the first embodiment described above.

The invention is not limited to the embodiments described above.
For example, the exposure apparatus and method of the present invention expose the right half region of the glass substrate 2 and then expose the right half region of the glass substrate 2 so that the left half region of the glass substrate 2 is located in the mask region of the photomasks 10, 30. 30 may be translated or rotated. Further, in the exposure apparatus and method of the present invention, the entire exposure target area of the glass substrate 2 may be divided into three or four or more areas and exposure may be performed separately. Further, the pattern formed by the exposure apparatus and method of the present invention is not limited to the stripe pattern. Further, the pattern formed by the exposure apparatus and the method of the present invention may be, for example, a semiconductor device pattern in addition to the LCD black matrix and color filter.

[0063]

According to the exposure apparatus and method of the present invention, exposure can be performed using a photomask having a size of 1/2 to 1/4 of the pattern formed on the substrate. Therefore, using a highly accurate and inexpensive photomask,
Highly accurate exposure can be performed. Further, since the exposure apparatus and the method of the present invention perform the exposure by disposing the photomask with a constant gap to the substrate, the number of exposures can be significantly reduced as compared with the case of performing the exposure of the stepper method, Throughput can be improved. Therefore, the exposure apparatus and method of this embodiment are particularly effective when exposing a large substrate. Further, according to the exposure apparatus and the method of the present invention, 1/2 to 1 of the pattern formed on the substrate is used.
By using a photomask having an area of / 4, the illumination area of the light source for exposure can be halved and the illuminance distribution can be improved. This also enables highly accurate exposure. Further, according to the exposure apparatus and the method thereof of the present invention, if the photomask is fixed and used, the possibility of damaging the photomask can be reduced.

[Brief description of drawings]

FIG. 1 (A) is a front view of a color filter substrate manufactured by using an exposure apparatus and a method therefor according to a first embodiment of the present invention, and FIG. 1 (B) is a side view thereof.

FIG. 2 is a diagram for explaining a process of performing exposure for forming a black matrix on a glass substrate by using the exposure apparatus and the method thereof according to the first embodiment.
2A is a front view, FIG. 2B is a side view when exposing the right half of the substrate that becomes the effective area, and FIG. 2C is a side view when exposing the left half of the substrate that is the effective area. Is.

FIG. 3 is a diagram for explaining the arrangement of alignment marks formed on the glass substrate used in the first embodiment.

FIG. 4 is a side view illustrating a glass substrate having a black matrix according to the first embodiment.

FIG. 5 is a diagram for explaining a step of performing exposure for forming a color filter on a glass substrate by using the exposure apparatus and the method thereof according to the first embodiment, and FIG.
5B is a front view, FIG. 5B is a side view when exposing the right half of the substrate that becomes the effective area, and FIG. 5C is a side view when exposing the left half of the substrate that becomes the effective area.

FIG. 6 is a diagram for explaining a process of performing exposure for forming a color filter on a glass substrate by using the exposure apparatus and the method thereof according to the first embodiment.

FIG. 7 is a front view for explaining a color filter substrate manufactured using the exposure apparatus and the method therefor according to the second embodiment.

FIG. 8 is a diagram for explaining a step of performing exposure for forming a black matrix on a glass substrate by using the exposure apparatus and method according to the second embodiment.
8A is a front view, FIG. 8B is a side view when exposing the right half of the substrate that becomes the effective area, and FIG. 8C is a side view when exposing the left half of the substrate that is the effective area. Is.

FIG. 9 is a diagram for explaining a black matrix formed on a glass substrate in the second embodiment.

FIG. 10 is a diagram for explaining a process of performing exposure for forming a color filter on a glass substrate by using the exposure apparatus and the method thereof according to the second embodiment.
10A is a front view, FIG. 10B is a side view when exposing the right half of the substrate that becomes the effective area, and FIG. 10C is a side view when exposing the left half of the substrate that is the effective area. Is.

FIG. 11 is a diagram for explaining a step of performing exposure for forming a color filter on a glass substrate by using the exposure apparatus and the method thereof according to the second embodiment.

[Explanation of symbols]

1, 41 ... Color filter substrate 2 ... Glass substrate 3 ... Black matrix 3a, 3b, 20b, 20c, 21b, 21c ...
Alignment mark 4 ... Color filter 5 ... Effective area 10, 30 ... Photomask 12 ... Film 13 ... Resist film

Claims (10)

[Claims] 1. An exposure apparatus used when forming a predetermined pattern on a substrate, comprising: an exposure light source; and an exposure target area of the substrate, which is arranged with a constant gap from the substrate. A photomask having a mask region having a size of ½ to ¼, and the entire exposure target region of the substrate is divided corresponding to the mask region, and the divided regions are sequentially located in the mask region. An exposure apparatus having a moving means for moving the substrate relative to the photomask. 2. The moving means, after exposing the first divided area, moves the substrate relatively parallel to the photomask so that the second divided area is located in the mask area. The exposure apparatus according to claim 1. 3. The moving means, after exposing the first divided area, relatively moves the substrate about a predetermined point by about 180 ° so that the second divided area is located in the mask area. The exposure apparatus according to claim 1, wherein the exposure apparatus is rotated. 4. The exposure apparatus according to claim 1, wherein the photomask is provided with marks for aligning each of the divided areas of the substrate with the mask area of the photomask. 5. The moving means is configured so that there is a predetermined overlapping portion in the exposed area when the first divided area is exposed by the photomask and when the second divided area is exposed. The exposure apparatus according to claim 1, wherein the substrate is moved relative to the photomask. 6. An exposure method performed to form a predetermined pattern on a substrate, comprising: a photomask having a mask region having a size of 1/2 to 1/4 of the entire exposure target region of the substrate. After exposing the first divided region having a size obtained by dividing the entire exposure target region in correspondence with the mask region, the substrate is moved relative to the photomask, and the entire exposure target of the substrate is used. An exposure method for exposing a second divided area of the area. 7. The substrate is moved in parallel relative to the photomask so that the second divided region is located in the mask region after exposing the first divided region. The exposure method described in. 8. After exposing the first divided area, the substrate is rotated about 180 ° about a predetermined point with respect to the photomask so that the second divided area is located in the mask area. The exposure method according to claim 6, wherein the exposure method is relatively rotated. 9. The exposure method according to claim 6, wherein the divided area and the mask area are aligned using a mark provided on the photomask. 10. The substrate is arranged so that there is a predetermined overlap in the exposed area between when the first divided area is exposed by the photomask and when the second divided area is exposed. The exposure method according to claim 6, wherein the exposure method is moved relative to the photomask.