JPH08325054A - Low dielectric loss body - Google Patents
Low dielectric loss bodyInfo
- Publication number
- JPH08325054A JPH08325054A JP7133557A JP13355795A JPH08325054A JP H08325054 A JPH08325054 A JP H08325054A JP 7133557 A JP7133557 A JP 7133557A JP 13355795 A JP13355795 A JP 13355795A JP H08325054 A JPH08325054 A JP H08325054A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric loss
- low dielectric
- present
- powder
- sintered body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Inorganic Insulating Materials (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、高周波で使用される回
路基板やマイクロ波用誘電体等として使用される低誘電
損失体に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a low dielectric loss element used as a circuit board used at high frequencies, a dielectric material for microwaves and the like.
【０００２】[0002]
【従来の技術】近年、例えば自動車電話、コードレステ
レホン、パーソナル無線、衛星放送受信機の実用化に伴
い、マイクロ波領域での回路素子として誘電体磁器が広
く使用されている。2. Description of the Related Art In recent years, with the practical use of car telephones, cordless telephones, personal radios, and satellite broadcast receivers, for example, dielectric ceramics have been widely used as circuit elements in the microwave region.
【０００３】このようなマイクロ波用誘電体磁器は主に
共振器に用いられるが、そこに要求される特性として、
小型化の要求に対して比誘電率が大きいこと、高周波で
の誘電損失（ｔａｎδ）が小さいこと、言い換えればＱ
値が大きいことが主として挙げられる。しかし、より高
周波数域（周波数１ＧＨｚ以上）で使用する場合、用い
られる電波の波長が短波長（ミリ波）であるため、加工
精度等の点からむしろ誘電率１０〜２０程度の低い誘電
率の材料が必要となることが知られている。Such a microwave dielectric ceramic is mainly used for a resonator, and the required characteristics are as follows.
Large relative permittivity and small dielectric loss (tan δ) at high frequency in response to the demand for miniaturization, in other words, Q
A large value is mainly mentioned. However, when used in a higher frequency range (frequency of 1 GHz or more), since the wavelength of the radio wave used is a short wavelength (millimeter wave), it is rather low dielectric constant of about 10 to 20 from the viewpoint of processing accuracy. It is known that materials are needed.
【０００４】そこで、このような低誘電率の誘電体磁器
のうち、高周波電子回路の導波体としてアルミナ磁器が
注目されている。Therefore, among such dielectric ceramics having a low dielectric constant, alumina ceramics have been attracting attention as a waveguide for a high frequency electronic circuit.
【０００５】しかしながら、従来のアルミナ磁器はＡｌ
2 Ｏ3 の含有率９９．９％以上の焼結体であり、誘電率
（ε）が約１０の優れた特性を有するが、このようなＡ
ｌ2Ｏ3 含有率の高いアルミナ磁器は１８００℃以上で
焼成する必要があり、量産性に乏しいという問題点があ
った（特公昭６３−６６７９５号、特公平２−１１１０
号公報等参照）。However, the conventional alumina porcelain is Al
It is a sintered body having a content of 2 O 3 of 99.9% or more, and has excellent characteristics of a dielectric constant (ε) of about 10.
Alumina porcelain having a high l 2 O 3 content needs to be fired at 1800 ° C. or higher, and has a problem of poor mass productivity (Japanese Patent Publication No. 63-66795, Japanese Patent Publication No. 2-1110).
No.
【０００６】そこで、焼成温度を下げるために、アルミ
ナに種々の添加物を加えることが行われているが、焼成
温度を満足できる程度に低下させるためには添加量が多
くなり、誘電損失（ｔａｎδ）が高くなるという問題が
あった。Therefore, in order to lower the firing temperature, various additives have been added to alumina. However, in order to lower the firing temperature to a satisfactory level, the addition amount is increased and the dielectric loss (tan δ). ) Was high.
【０００７】一方、上述のアルミナ磁器においても、高
周波における誘電損失（ｔａｎδ）を低くすることが求
められているが、満足なものは得られていなかった。On the other hand, also in the above-mentioned alumina porcelain, it is required to reduce the dielectric loss (tan δ) at high frequencies, but satisfactory results have not been obtained.
【０００８】[0008]
【課題を解決するための手段】本発明者は、上記の問題
について検討を重ねた結果、主成分であるＡｌ2 Ｏ3に
Ｙ2 Ｏ3 を０．５重量％以上含有させることにより、７
〜９ＧＨｚの高周波数域において誘電損失（ｔａｎδ）
を１×１０-4以下にできるとともに、焼成温度を１５０
０〜１７００℃として容易に製造できることを見出し、
本発明に至った。Means for Solving the Problems As a result of repeated studies on the above-mentioned problems, the present inventor has found that the main component Al 2 O 3 contains Y 2 O 3 in an amount of 0.5% by weight or more.
Dielectric loss (tan δ) in the high frequency range up to 9 GHz
With a possible to 1 × 10 -4 or less, the firing temperature 150
Found that it can be easily manufactured at 0 to 1700 ° C,
The present invention has been completed.
【０００９】即ち、本発明の低誘電損失体はＡｌ2 Ｏ3
を主成分とし、Ｙ2 Ｏ3 を０．５重量％以上含有するア
ルミナ質焼結体であり、特にＡｌ2 Ｏ3 結晶相の粒界中
にＹ2 Ｏ3 もしくはＹ2 Ｏ3 とＡｌ2 Ｏ3 の化合物、即
ちＹ2 Ｏ3 ・Ａｌ2 Ｏ3 、２Ｙ2 Ｏ3 ・Ａｌ2 Ｏ3 、３
Ｙ2 Ｏ3 ・５Ａｌ2 Ｏ3 が存在することを特徴とする。That is, the low dielectric loss element of the present invention is Al 2 O 3
Is an alumina sintered body containing 0.5% by weight or more of Y 2 O 3 as a main component, and particularly Y 2 O 3 or Y 2 O 3 and Al 2 are contained in the grain boundary of the Al 2 O 3 crystal phase. Compounds of O 3 , that is, Y 2 O 3 .Al 2 O 3 , 2Y 2 O 3 .Al 2 O 3 , 3,
It is characterized by the presence of Y 2 O 3 .5Al 2 O 3 .
【００１０】ここで、Ｙ2 Ｏ3 を０．５重量％以上含有
させたのは、Ｙ2 Ｏ3 を添加することによって、不可避
不純物、特にＭｇＯ等の周期律表２ａ族元素のアルミナ
への固溶を抑制し、格子欠陥の生成を防止し、誘電損失
を低下させるためであり、また１５００〜１７００℃に
て焼成可能とするためである。ただし、Ｙ2 Ｏ3 の含有
量が多くなると比誘電率が高くなりすぎるため、Ｙ2 Ｏ
3 含有量は９０重量％以下とする。特に、Ｙ2 Ｏ3 含有
量を１〜８０重量％の範囲とすれば比誘電率を２０以下
に抑制することができ好適である。Here, Y 2 O 3 is contained in an amount of 0.5% by weight or more because the addition of Y 2 O 3 prevents inevitable impurities, particularly MgO and other elements of Group 2a of the periodic table from being added to alumina. This is because solid solution is suppressed, lattice defects are prevented from being generated, dielectric loss is reduced, and firing at 1500 to 1700 ° C. is possible. However, since Y 2 content of O 3 is increased when the relative dielectric constant becomes too high, Y 2 O
3 Content is 90% by weight or less. Particularly, if the Y 2 O 3 content is in the range of 1 to 80% by weight, the relative dielectric constant can be suppressed to 20 or less, which is preferable.
【００１１】また、Ａｌ2 Ｏ3 結晶の粒界中にＹ2 Ｏ3
もしくはＹ2 Ｏ3 とＡｌ2 Ｏ3 の化合物、即ちＹ2 Ｏ3
・Ａｌ2 Ｏ3 、２Ｙ2 Ｏ3 ・Ａｌ2 Ｏ3 、３Ｙ2 Ｏ3 ・
５Ａｌ2 Ｏ3 を存在させたのは、焼結体全体の誘電損失
を低くするためである。Further, Y 2 O 3 is contained in the grain boundary of the Al 2 O 3 crystal.
Alternatively, a compound of Y 2 O 3 and Al 2 O 3 , that is, Y 2 O 3
・ Al 2 O 3 , 2Y 2 O 3・ Al 2 O 3 , 3Y 2 O 3・
The presence of 5Al 2 O 3 is to reduce the dielectric loss of the entire sintered body.
【００１２】本発明のアルミナ質焼結体には、上記以外
の成分として、ＳｉＯ2 を１×１０-6〜０．２重量％、
好適には１×１０-6〜０．０４重量％、Ｆｅ2 Ｏ3 を１
×１０-6〜０．１重量％、好適には１×１０-6〜０．０
３重量％、Ｎａ2 Ｏを１×１０-6〜０．２重量％、好適
には１×１０-6〜０．０８重量％の範囲で含有すること
が好ましい。これらの成分を上記範囲で含有することに
よって、誘電損失を低くすることができる。In the alumina-based sintered body of the present invention, as a component other than the above, SiO 2 is 1 × 10 −6 to 0.2% by weight,
Preferably 1 × 10 −6 to 0.04 wt%, Fe 2 O 3 is 1
× 10 −6 to 0.1% by weight, preferably 1 × 10 −6 to 0.0
3% by weight and Na 2 O are preferably contained in the range of 1 × 10 −6 to 0.2% by weight, and more preferably 1 × 10 −6 to 0.08% by weight. By including these components in the above range, the dielectric loss can be reduced.
【００１３】また、本発明のアルミナ質焼結体の平均結
晶粒子径は２〜８０μｍの範囲内とすることが好まし
い。The average crystal grain size of the alumina sintered body of the present invention is preferably in the range of 2 to 80 μm.
【００１４】本発明の低誘電損失体をなすアルミナ質焼
結体の製造方法は、まず純度９９．８％以上、平均粒子
径２μｍ以下のＡｌ2 Ｏ3 粉末に、純度９９．８％以
上、平均粒子径０．５〜５μｍのＹ2 Ｏ3 粉末を０．５
重量％以上添加し、これに例えばイソプロピルアルコー
ル等の有機溶媒を加え、ボールミル等で混合粉砕する。
得られたスラリーを所定温度で加熱し乾燥した後、パラ
フィンワックス等のバインダーを添加し、加熱混合して
混合粉末を得る。In the method for producing an alumina-based sintered body which constitutes the low dielectric loss body of the present invention, first, Al 2 O 3 powder having a purity of 99.8% or more and an average particle diameter of 2 μm or less is used, and a purity of 99.8% or more, Y 2 O 3 powder having an average particle size of 0.5 to 5 μm is added to 0.5
It is added by weight% or more, and an organic solvent such as isopropyl alcohol is added thereto, and mixed and pulverized by a ball mill or the like.
The obtained slurry is heated at a predetermined temperature and dried, then a binder such as paraffin wax is added and mixed by heating to obtain a mixed powder.
【００１５】得られた粉末を公知の成形方法、例えばプ
レス成形により成形し、これを例えば大気中において１
５００〜１７００℃の範囲内の焼成温度で０．５〜５時
間焼成し、アルミナ質焼結体を得ることができる。得ら
れたアルミナ質焼結体にはＡｌ2 Ｏ3 結晶相あるいはＡ
ｌ2 Ｏ3 結晶相とＹ2 Ｏ3 結晶相もしくは３Ｙ2 Ｏ3・
５Ａｌ2 Ｏ3 結晶相が存在し、その粒界中にＹ2 Ｏ3 も
しくはＹ2 Ｏ3 とＡｌ2 Ｏ3 の化合物、即ちＹ2 Ｏ3 ・
Ａｌ2 Ｏ3 、２Ｙ2 Ｏ3 ・Ａｌ2 Ｏ3 、３Ｙ2Ｏ3 ・５
Ａｌ2 Ｏ3 が存在する。The obtained powder is molded by a known molding method, for example, press molding, and this is subjected to 1
By firing at a firing temperature in the range of 500 to 1700 ° C for 0.5 to 5 hours, an alumina-based sintered body can be obtained. The obtained alumina-based sintered body contains Al 2 O 3 crystal phase or A
l 2 O 3 crystal phase and Y 2 O 3 crystal phase or 3Y 2 O 3
5Al 2 O 3 crystal phase exists, and Y 2 O 3 or a compound of Y 2 O 3 and Al 2 O 3 , ie, Y 2 O 3
Al 2 O 3 , 2Y 2 O 3 · Al 2 O 3 , 3Y 2 O 3 · 5
Al 2 O 3 is present.
【００１６】次に、本発明者は、イットリア・アルミニ
ウム・ガーネット（ＹＡＧ）を主成分とする焼結体であ
って、その粒界中にＡｌ2 Ｏ3 、Ｙ2 Ｏ3 、もしくはＹ
2 Ｏ3 とＡｌ2 Ｏ3 の化合物、即ちＹ2 Ｏ3 ・Ａｌ2 Ｏ
3 、２Ｙ2 Ｏ3 ・Ａｌ2 Ｏ3を存在させることにより、
７〜９ＧＨｚでの誘電損失（ｔａｎδ）が１×１０-4以
下である低誘電損失体を得られることを見出した。Next, the inventor of the present invention is a sintered body containing yttria aluminum garnet (YAG) as a main component and has Al 2 O 3 , Y 2 O 3 or Y in its grain boundaries.
Compound of 2 O 3 and Al 2 O 3 , that is, Y 2 O 3 .Al 2 O
3, by the presence of 2Y 2 O 3 · Al 2 O 3,
It has been found that a low dielectric loss body having a dielectric loss (tan δ) at 7 to 9 GHz of 1 × 10 −4 or less can be obtained.
【００１７】さらには、上記ＹＡＧを主成分とする焼結
体に透光性を持たせ、７〜９ＧＨｚでの誘電損失（ｔａ
ｎδ）が１×１０-4以下である低誘電損失体を得ること
ができる。Furthermore, the sintered body containing YAG as a main component is made to have a light-transmitting property, and the dielectric loss (ta) at 7 to 9 GHz is obtained.
It is possible to obtain a low dielectric loss element having nδ) of 1 × 10 −4 or less.
【００１８】このような焼結体は、Ａｌ2 Ｏ3 ４２．９
％とＹ2 Ｏ3 ５７．１％とした原料粉末を成形し、１７
５０〜１９００℃の真空中または還元性雰囲気中で焼成
することにより透光性を有するＹＡＧ焼結体が得られ
る。透光性を有するほどであるから、その表面や内部に
ボイドは極めて少なく、格子欠陥が少ないために誘電損
失の低い焼結体とできるのである。Such a sintered body is made of Al 2 O 3 42.9.
% And Y 2 O 3 57.1% to form a raw material powder,
A YAG sintered body having translucency can be obtained by firing in a vacuum at 50 to 1900 ° C. or in a reducing atmosphere. Since it has a light-transmitting property, it has extremely few voids on its surface and inside and has few lattice defects, so that a sintered body with low dielectric loss can be obtained.
【００１９】また、Ｙ2 Ｏ3 とＡｌ2 Ｏ3 からなるガー
ネット構造の焼結体は、ほとんどが立方晶のＹＡＧ結晶
であり、わずかに存在する粒界成分は過剰のＡｌ
2 Ｏ3 、Ｙ2 Ｏ3 またはこれらの化合物であるため、前
述の不可避不純物、特にＭｇＯ等の周期律表第２ａ族元
素のアルミナへの固溶を抑制し、格子欠陥の生成を防止
して誘電損失の低下を可能としているのである。Most of the garnet structure sintered bodies composed of Y 2 O 3 and Al 2 O 3 are cubic YAG crystals, and a slight amount of grain boundary component is excessive Al.
Since it is 2 O 3 , Y 2 O 3 or a compound thereof, it suppresses the solid solution of the above-mentioned unavoidable impurities, particularly elements of Group 2a of the Periodic Table, such as MgO, in alumina, and prevents the generation of lattice defects. It is possible to reduce the dielectric loss.
【００２０】さらに、本発明のＹＡＧ焼結体は、上述し
たアルミナ質焼結体の場合と同量のＳｉＯ2 、Ｆｅ2 Ｏ
3 、Ｎａ2 Ｏを含有することが好ましく、これらの成分
を含有することによって、誘電損失を低くすることがで
きる。Furthermore, the YAG sintered body of the present invention has the same amount of SiO 2 and Fe 2 O as those of the above-mentioned alumina sintered body.
It is preferable to contain 3 , Na 2 O, and by containing these components, the dielectric loss can be reduced.
【００２１】以上のような本発明の低誘電損失体は、高
周波で使用される回路基板やマイクロ波用誘電体等とし
て使用することができる。The low dielectric loss body of the present invention as described above can be used as a circuit board used at high frequencies, a dielectric body for microwaves, or the like.
【００２２】[0022]
【実施例】以下本発明の実施例を詳細に説明する。Embodiments of the present invention will be described below in detail.
【００２３】実施例１ 純度９９．８％、平均粒子径０．５μｍのＡｌ2 Ｏ3 粉
末と、純度９９．９％、平均粒子径１μｍのＹ2 Ｏ3 粉
末を表１に示す割合で添加し、これをイソプロピルアル
コールからなる有機溶媒と、アルミナボール１００ｇと
ともにポリエチレン製ポットに入れ、４８時間混合粉砕
した。得られたスラリーを８０℃で加熱し乾燥した後８
０メッシュの篩いを通し、パラフィンワックスからなる
バインダーを添加し、加熱混合した後４０メッシュの篩
いを通して原料粉末を得た。 Example 1 Al 2 O 3 powder having a purity of 99.8% and an average particle size of 0.5 μm and Y 2 O 3 powder having a purity of 99.9% and an average particle size of 1 μm were added at the ratios shown in Table 1. Then, this was put in a polyethylene pot together with an organic solvent consisting of isopropyl alcohol and 100 g of alumina balls, and mixed and pulverized for 48 hours. After heating the obtained slurry at 80 ° C. and drying, 8
After passing through a 0 mesh sieve, a binder made of paraffin wax was added, mixed by heating, and then passed through a 40 mesh sieve to obtain a raw material powder.
【００２４】得られた粉末を圧力１０００ｋｇ／ｃｍ2
で成形し、直径６０ｍｍ、厚さ２ｍｍに成形し、これを
表１に示す温度で焼成した。このようにして得られた焼
結体をアセトンにて１０分間超音波洗浄した後、自然乾
燥させて試料とした。The obtained powder is pressed at a pressure of 1000 kg / cm 2.
And a diameter of 60 mm and a thickness of 2 mm, which were fired at the temperatures shown in Table 1. The thus obtained sintered body was ultrasonically cleaned with acetone for 10 minutes and then naturally dried to obtain a sample.
【００２５】得られた試料を空洞共振器法により、ネッ
トワクアナライザー（ＨＰ−８７５７Ｃ）、シンセサイ
ズドスイーパー（ＨＰ−８７５７Ｃ）で測定周波数８〜
９ＧＨｚにおいて誘電率および誘電損失（ｔａｎδ）を
測定した。The obtained sample was measured by a cavity resonator method with a network analyzer (HP-8757C) and a synthesized sweeper (HP-8757C) at a frequency of 8 to 10.
Dielectric constant and dielectric loss (tan δ) were measured at 9 GHz.
【００２６】結果を表１に示すように、Ｙ2 Ｏ3 含有量
が０．５重量％未満の場合（Ｎｏ．１，２）は誘電損失
が非常に高いことが判る。これに対し、０．５重量％以
上のＹ2 Ｏ3 を含有させた本発明実施例（Ｎｏ．３〜
９）では、焼成温度が１５５０〜１７００℃と低く、誘
電率が１０〜２２で、ＧＨｚ帯における誘電損失も１．
０×１０-4以下と低いことがわかる。As shown in Table 1, the results show that the dielectric loss is very high when the Y 2 O 3 content is less than 0.5% by weight (Nos. 1 and 2). On the other hand, the inventive examples (No. 3 to 3 ) containing 0.5% by weight or more of Y 2 O 3
In 9), the firing temperature was as low as 1550 to 1700 ° C., the dielectric constant was 10 to 22, and the dielectric loss in the GHz band was 1.
It can be seen that it is as low as 0 × 10 −4 or less.
【００２７】また、本発明実施例の試料をＸ線回折によ
り確認し、熱リン酸でケミカルエッチングした後、波長
分散型マイクロアナライザーを用いて局所分析を行った
ところ、Ａｌ2 Ｏ3 結晶相が存在し、粒界中にＹ2 Ｏ3
もしくはＡｌ2 Ｏ3 とＹ2 Ｏ3 の化合物、即ちＹ2 Ｏ3
・Ａｌ2 Ｏ3 、２Ｙ2 Ｏ3 ・Ａｌ2 Ｏ3 、３Ｙ2 Ｏ3・
５Ａｌ2 Ｏ3 が存在することを確認した。Further, the samples of the present invention examples was confirmed by X-ray diffraction, after chemical etching with hot phosphoric acid, was subjected to local analysis using wavelength dispersive microanalyzer, Al 2 O 3 crystalline phase Exists, and Y 2 O 3 exists in the grain boundary.
Alternatively, a compound of Al 2 O 3 and Y 2 O 3 , that is, Y 2 O 3
・ Al 2 O 3 , 2Y 2 O 3・ Al 2 O 3 , 3Y 2 O 3・
It was confirmed that 5Al 2 O 3 was present.
【００２８】[0028]
【表１】 [Table 1]
【００２９】実施例２ 純度９９．８％、平均粒子径０．５μｍのＡｌ2 Ｏ3 粉
末を４２．９重量％と純度９９．９％、平均粒子径１μ
ｍのＹ2 Ｏ3 粉末を５７．１重量％を混合し、これにイ
ソプロピルアルコールからなる溶媒とアルミナボールを
加えてポリエチレン製ポットに入れ、４８時間混合粉砕
した。得られたスラリーを８０℃に乾燥し、１０００〜
１４００℃で仮焼してＹＡＧを生成した。この粉末をメ
ッシュパス後、イソプロピルアルコールからなる溶媒と
アルミナボールを加えてポリエチレン製ポットに入れ２
４時間粉砕した。得られたスラリーを８０℃で乾燥しメ
ッシュパス後、バインダーを加えて圧力１０００ｋｇ／
ｃｍ2 で成形し、表２のＮｏ．１０に示す温度で焼成し
て試料を得た。 Example 2 42.9% by weight of Al 2 O 3 powder having a purity of 99.8% and an average particle diameter of 0.5 μm, a purity of 99.9% and an average particle diameter of 1 μ
57.1 wt% of Y 2 O 3 powder of m was mixed, the solvent consisting of isopropyl alcohol and alumina balls were added thereto, and the mixture was put into a polyethylene pot and mixed and pulverized for 48 hours. The obtained slurry is dried at 80 ° C.
It was calcined at 1400 ° C to produce YAG. After passing this powder through a mesh, add a solvent consisting of isopropyl alcohol and alumina balls and put in a polyethylene pot.
Crushed for 4 hours. The obtained slurry is dried at 80 ° C., passed through a mesh, and a binder is added to the mixture to give a pressure of 1000 kg /
cm 2 and No. 2 in Table 2 was used. A sample was obtained by firing at the temperature shown in FIG.
【００３０】この試料に対し、実施例１と同様にして誘
電率、誘電損失（ｔａｎδ）を測定した結果を表２に示
すように、７〜９ＧＨｚにおける誘電損失（ｔａｎδ）
が１．０×１０-4以下であることがわかる。The dielectric constant and dielectric loss (tan δ) of this sample were measured in the same manner as in Example 1, and as shown in Table 2, the dielectric loss (tan δ) at 7 to 9 GHz is shown.
Is 1.0 × 10 −4 or less.
【００３１】また、この試料をＸ線回折により確認し、
実施例１と同様の局所分析を行ったところ、ＹＡＧ結晶
相が存在し、粒界中にＹ2 Ｏ3 、Ａｌ2 Ｏ3 、Ｙ2 Ｏ3
・Ａｌ2 Ｏ3 、２Ｙ2 Ｏ3 ・Ａｌ2 Ｏ3 が存在すること
を確認した。したがって、ＹＡＧ結晶を主成分とし、そ
の粒界中にＹ2 Ｏ3 、Ａｌ2 Ｏ3 、もしくはＹ2 Ｏ3と
Ａｌ2 Ｏ3 の化合物が存在することによって誘電損失を
低くできることがわかる。Further, this sample was confirmed by X-ray diffraction,
When the same local analysis as in Example 1 was performed, a YAG crystal phase was present, and Y 2 O 3 , Al 2 O 3 , and Y 2 O 3 were present in the grain boundaries.
It was confirmed that Al 2 O 3 and 2Y 2 O 3 .Al 2 O 3 were present. Therefore, it can be seen that the dielectric loss can be reduced by using YAG crystal as a main component and containing Y 2 O 3 , Al 2 O 3 , or a compound of Y 2 O 3 and Al 2 O 3 in the grain boundary.
【００３２】[0032]
【表２】 [Table 2]
【００３３】実施例３ それぞれ純度９９．８％、ＢＥＴ比表面積５ｍ2 ／ｇ、
平均粒子径１．０μｍのＡｌ2 Ｏ3 粉末を４２．９重量
％とＹ2 Ｏ3 粉末を５７．１重量％を混合し、これにイ
ソプロピルアルコールからなる溶媒とアルミナボールを
加えてポリエチレン製ポットに入れ、回転ミルで２４時
間混合粉砕した。得られたスラリーを乾燥しメッシュパ
スした後、１０００〜１４００℃で仮焼し、その後再び
イソプロピルアルコールを加えて回転ミルで２４時間粉
砕した。得られたスラリーを乾燥しメッシュパス後、バ
インダーを加えて金型プレス及び冷間静水圧プレスを用
い、生密度２．５ｇ／ｃｍ3 以上の２５．４×２５．４
×２ｍｍの成形体を作り、真空炉にて１７５０〜１９０
０℃で真空焼成し、上記表２中のＮｏ．１１〜１３の試
料を得た。 Example 3 Purity: 99.8%, BET specific surface area: 5 m 2 / g,
42.9% by weight of Al 2 O 3 powder having an average particle diameter of 1.0 μm and 57.1% by weight of Y 2 O 3 powder were mixed, and a solvent made of isopropyl alcohol and an alumina ball were added to the mixture to make a polyethylene pot. , And mixed and pulverized with a rotary mill for 24 hours. The obtained slurry was dried and passed through a mesh, then calcined at 1000 to 1400 ° C., isopropyl alcohol was added again, and the mixture was pulverized by a rotary mill for 24 hours. The obtained slurry is dried and passed through a mesh, and then a binder is added thereto and a mold press and a cold isostatic press are used to obtain a raw density of 2.5 g / cm 3 or more and 25.4 × 25.4.
Make a molded body of × 2mm, and 1750-190 in a vacuum furnace
Vacuum firing was performed at 0 ° C., and No. 1 in Table 2 above was used. 11 to 13 samples were obtained.
【００３４】これらの試料のうち、Ｎｏ．１３は焼成温
度が高すぎて溶融してしまった。残りのＮｏ．１１，１
２の試料を実施例１と同様の方法で誘電率、誘電損失を
測定したところ、いずれも誘電損失が０．５×１０-4以
下と極めて低くすることができた。Of these samples, No. No. 13 was melted because the firing temperature was too high. The remaining No. 11,1
When the dielectric constant and the dielectric loss of the sample No. 2 were measured in the same manner as in Example 1, the dielectric loss was 0.5 × 10 −4 or less, which was extremely low.
【００３５】また、この試料を実施例１と同様にして局
所分析したところ、ＹＡＧ結晶相が存在し、粒界中にＹ
2 Ｏ3 、Ａｌ2 Ｏ3 、Ｙ2 Ｏ3 ・Ａｌ2 Ｏ3 、２Ｙ2 Ｏ
3 ・Ａｌ2 Ｏ3 が存在することを確認した。A local analysis of this sample was carried out in the same manner as in Example 1. As a result, a YAG crystal phase was present and Y was present in the grain boundaries.
2 O 3 , Al 2 O 3 , Y 2 O 3 · Al 2 O 3 , 2Y 2 O
It was confirmed that 3 · Al 2 O 3 was present.
【００３６】さらに、これらの焼結体は透光性を有して
おり、光透過性を求められるような用途に使用すること
ができる。Further, these sintered bodies have a light-transmitting property and can be used in applications where light-transmitting properties are required.
【００３７】[0037]
【発明の効果】以上のように本発明によれば、Ａｌ2 Ｏ
3 を主成分とし、０．５重量％以上のＹ2 Ｏ3 を含有す
る焼結体であって、Ａｌ2 Ｏ3 結晶相の粒界中にＹ2 Ｏ
3 もしくはＡｌ2 Ｏ3 とＹ2 Ｏ3 の化合物を存在させる
ことによって、７〜９ＧＨｚにおける誘電損失（ｔａｎ
δ）が１．０×１０-4以下であるような低誘電損失体を
得ることができる。As described above, according to the present invention, Al 2 O
3 as a main component, a sintered body containing Y 2 O 3 more than 0.5 wt%, in the grain boundaries of Al 2 O 3 crystalline phase Y 2 O
3 or the presence of a compound of Al 2 O 3 and Y 2 O 3 causes dielectric loss (tan) at 7 to 9 GHz.
A low dielectric loss element having a δ) of 1.0 × 10 −4 or less can be obtained.
【００３８】また本発明によれば、イットリア・アルミ
ニウム・ガーネット（ＹＡＧ）を主成分とする焼結体で
あって、該ＹＡＧ結晶相の粒界中にＡｌ2 Ｏ3 、Ｙ2 Ｏ
3 、もしくはＡｌ2 Ｏ3 とＹ2 Ｏ3 の化合物を存在させ
ることによって、７〜９ＧＨｚにおける誘電損失（ｔａ
ｎδ）が１．０×１０-4以下であるような低誘電損失体
を得ることができる。According to the present invention, a sintered body containing yttria aluminum garnet (YAG) as a main component, wherein Al 2 O 3 and Y 2 O are contained in the grain boundaries of the YAG crystal phase.
3 or a compound of Al 2 O 3 and Y 2 O 3 is present, the dielectric loss (ta
It is possible to obtain a low dielectric loss element having nδ) of 1.0 × 10 −4 or less.
【００３９】したがって、本発明の低誘電損失体は、高
周波で使用される回路基板やマイクロ波用誘電体等とし
て好適に用いることができる。Therefore, the low dielectric loss body of the present invention can be suitably used as a circuit board used at high frequencies, a microwave dielectric body, or the like.
Claims (2)
上のＹ2 Ｏ3 を含有する焼結体であって、Ａｌ2 Ｏ3 結
晶相の粒界にＹ2 Ｏ3 もしくはＡｌ2 Ｏ3 とＹ2 Ｏ3 の
化合物が存在し、７〜９ＧＨｚにおける誘電損失（ｔａ
ｎδ）が１．０×１０-4以下であることを特徴とする低
誘電損失体。1. A sintered body containing Al 2 O 3 as a main component and containing 0.5% by weight or more of Y 2 O 3 , wherein Y 2 O 3 or Y 2 O 3 is present at a grain boundary of an Al 2 O 3 crystal phase. A compound of Al 2 O 3 and Y 2 O 3 exists, and the dielectric loss (ta
n δ) is 1.0 × 10 −4 or less, a low dielectric loss body.
（ＹＡＧ）を主成分とする焼結体であって、ＹＡＧ結晶
相の粒界にＡｌ2 Ｏ3 、Ｙ2 Ｏ3 、もしくはＡｌ2 Ｏ3
とＹ2 Ｏ3 の化合物が存在し、７〜９ＧＨｚにおける誘
電損失（ｔａｎδ）が１．０×１０-4以下であることを
特徴とする低誘電損失体。損失体。2. A sintered body containing yttria aluminum garnet (YAG) as a main component, wherein Al 2 O 3 , Y 2 O 3 or Al 2 O 3 is present at grain boundaries of the YAG crystal phase.
And a compound of Y 2 O 3 are present, and the dielectric loss (tan δ) at 7 to 9 GHz is 1.0 × 10 −4 or less, a low dielectric loss body. Lost body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13355795A JP3339989B2 (en) | 1995-05-31 | 1995-05-31 | Low dielectric loss material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13355795A JP3339989B2 (en) | 1995-05-31 | 1995-05-31 | Low dielectric loss material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08325054A true JPH08325054A (en) | 1996-12-10 |
| JP3339989B2 JP3339989B2 (en) | 2002-10-28 |
Family
ID=15107599
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13355795A Expired - Fee Related JP3339989B2 (en) | 1995-05-31 | 1995-05-31 | Low dielectric loss material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3339989B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6916559B2 (en) | 1997-02-26 | 2005-07-12 | Kyocera Corporation | Ceramic material resistant to halogen plasma and member utilizing the same |
| US7022636B2 (en) | 2001-10-03 | 2006-04-04 | Kyocera Corporation | Ceramic member for semiconductor manufacturing equipment |
| US7691765B2 (en) | 2005-03-31 | 2010-04-06 | Fujifilm Corporation | Translucent material and manufacturing method of the same |
| CN115073161A (en) * | 2022-06-14 | 2022-09-20 | 重庆翰博显示科技研发中心有限公司 | Preparation method of composite ceramic |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62132765A (en) * | 1985-12-03 | 1987-06-16 | 株式会社デンソー | Manufacture of high insulation high alumina base ceramic composition |
| JPS62270460A (en) * | 1986-05-19 | 1987-11-24 | 日本特殊陶業株式会社 | Colored ceramic composition |
| JPS63236213A (en) * | 1987-03-24 | 1988-10-03 | 住友金属鉱山株式会社 | Dielectric ceramic |
| JPH06191929A (en) * | 1992-12-25 | 1994-07-12 | Kyocera Corp | Alumina-based sintered compact |
-
1995
- 1995-05-31 JP JP13355795A patent/JP3339989B2/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62132765A (en) * | 1985-12-03 | 1987-06-16 | 株式会社デンソー | Manufacture of high insulation high alumina base ceramic composition |
| JPS62270460A (en) * | 1986-05-19 | 1987-11-24 | 日本特殊陶業株式会社 | Colored ceramic composition |
| JPS63236213A (en) * | 1987-03-24 | 1988-10-03 | 住友金属鉱山株式会社 | Dielectric ceramic |
| JPH06191929A (en) * | 1992-12-25 | 1994-07-12 | Kyocera Corp | Alumina-based sintered compact |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6916559B2 (en) | 1997-02-26 | 2005-07-12 | Kyocera Corporation | Ceramic material resistant to halogen plasma and member utilizing the same |
| US7022636B2 (en) | 2001-10-03 | 2006-04-04 | Kyocera Corporation | Ceramic member for semiconductor manufacturing equipment |
| US7691765B2 (en) | 2005-03-31 | 2010-04-06 | Fujifilm Corporation | Translucent material and manufacturing method of the same |
| CN115073161A (en) * | 2022-06-14 | 2022-09-20 | 重庆翰博显示科技研发中心有限公司 | Preparation method of composite ceramic |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3339989B2 (en) | 2002-10-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1117708C (en) | Low temp. sinterable and low loss dielectric ceramic compositions and method thereof | |
| KR100365294B1 (en) | Low temperature sinterable and low loss dielectric ceramic compositions and method of thereof | |
| KR100567322B1 (en) | Dielectric ceramic composition of forsterite system for microwave and millimeter-wave application and method for forming the same | |
| JPH11106255A (en) | Dielectric ceramic composition and its production | |
| JPH08325054A (en) | Low dielectric loss body | |
| JP5134819B2 (en) | High frequency dielectric ceramics | |
| JP3131058B2 (en) | Alumina sintered body | |
| Xu et al. | Dielectric ceramics with TiO2 rich compositions in Bi2O3–TiO2 system | |
| JP5247561B2 (en) | Dielectric ceramics and dielectric resonator | |
| JP2002121066A (en) | Alumina-based sintered compact and method of producing the same | |
| JPH11130528A (en) | Dielectric ceramic composition and dielectric resonator produced by using the composition | |
| JP3311928B2 (en) | Alumina sintered body for high frequency | |
| JPWO2004106261A1 (en) | High frequency porcelain composition, method for producing the same, and planar high frequency circuit | |
| JP2003146752A (en) | Dielectric ceramic composition | |
| JP3359427B2 (en) | High frequency dielectric ceramic composition | |
| JP3125590B2 (en) | High frequency dielectric ceramic composition | |
| KR100487204B1 (en) | Microwave dielectric ceramic composition and method for manufacturing the same | |
| JP3330024B2 (en) | High frequency dielectric ceramic composition | |
| JP3777075B2 (en) | Dielectric porcelain | |
| JPH10330165A (en) | Dielectric substance ceramic for high frequency | |
| JP3309047B2 (en) | Dielectric porcelain composition | |
| JP3340019B2 (en) | High frequency dielectric ceramic composition | |
| CN116803947A (en) | Low-dielectric-constant titanate microwave dielectric ceramic and preparation method and application thereof | |
| JP5349146B2 (en) | Dielectric ceramics and dielectric resonator | |
| JPH10101425A (en) | Piezoelectric porcelain composition |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080816 Year of fee payment: 6 |
|
| LAPS | Cancellation because of no payment of annual fees |