JPH08321405A - Electronic element and its production - Google Patents

Electronic element and its production

Info

Publication number
JPH08321405A
JPH08321405A JP7127919A JP12791995A JPH08321405A JP H08321405 A JPH08321405 A JP H08321405A JP 7127919 A JP7127919 A JP 7127919A JP 12791995 A JP12791995 A JP 12791995A JP H08321405 A JPH08321405 A JP H08321405A
Authority
JP
Japan
Prior art keywords
ceramic body
insulating coating
external electrode
ceramic
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7127919A
Other languages
Japanese (ja)
Inventor
Hidehiro Inoue
英浩 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP7127919A priority Critical patent/JPH08321405A/en
Publication of JPH08321405A publication Critical patent/JPH08321405A/en
Pending legal-status Critical Current

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  • Details Of Resistors (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Thermistors And Varistors (AREA)

Abstract

PURPOSE: To obtain an electronic device which can be produced easily and at a low cost and is superior in reliability. CONSTITUTION: An outer electrode 2 made mainly of Ag is formed on both end parts of a ceramic base body 1 respectively, and an insulation film 11 is formed on the surface of the body 1, leaving the electrode 2 thereon as it is by means of the pad printing method. At this time, since one main surface of the body 1 and an approximately half area of two sides thereof are coated with insulation film material through every printing, the entire coating can be completed by two printing operations. Then, an Ni plating film 3 and Sn plating film 4 are formed on the surface of the electrode 2. The film 11 is made of inorganic material such as glass, etc., or organic material such as epoxy resin, etc.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、電子素子、特にセラミ
ック素体の表面に外部電極を設けた電子素子及びその製
造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic device, and more particularly to an electronic device having an external electrode provided on the surface of a ceramic body and a method for manufacturing the same.

【0002】[0002]

【従来の技術】セラミック素体を備えた電子素子、例え
ばサーミスタ素子やバリスタ素子の製造方法として、セ
ラミックウェハーの両主面にガラス被膜を形成した後、
ウェハーを製品サイズ毎にチップ状にカットし、このチ
ップ状セラミック素体の側面部にガラス被膜を形成した
後、次に、セラミック素体の端部に外部電極をディップ
法により形成し、さらにこの外部電極上に半田くわれ防
止のためにNiめっき、Sn(又は半田)めっきを順次
行なう方法が知られている(例えば、特開平4−334
001号公報参照)。
2. Description of the Related Art As a method of manufacturing an electronic element having a ceramic body, such as a thermistor element or a varistor element, after forming a glass coating on both main surfaces of a ceramic wafer,
After cutting the wafer into chips for each product size and forming a glass coating on the side surface of the chip-shaped ceramic body, next, an external electrode is formed at the end of the ceramic body by the dip method, and further A method is known in which Ni plating and Sn (or solder) plating are sequentially performed on the external electrodes to prevent solder nicks (for example, JP-A-4-334).
(See Japanese Patent Publication No. 001).

【0003】また、これとは別に、チップ状セラミック
素体をガラスペースト中に浸漬してセラミック素体全体
にガラス被膜を形成した後、セラミック素体の端部に外
部電極をディップ法により形成し、さらにこの外部電極
上にNiめっき、Sn(半田)めっきを順次行なう方法
が知られている(例えば、特開平5−283206、特
開平6−61008号公報参照)。
Separately from this, the chip-shaped ceramic body is dipped in a glass paste to form a glass coating on the entire ceramic body, and then external electrodes are formed on the end portions of the ceramic body by a dipping method. Further, a method is known in which Ni plating and Sn (solder) plating are sequentially performed on the external electrodes (see, for example, JP-A-5-283206 and JP-A-6-61008).

【0004】[0004]

【発明が解決しようとする課題】従来の技術で述べたも
ののうち前者においては、セラミック素体の側面部への
ガラス被膜形成にスクリーン印刷法を採用しているた
め、セラミック素体の稜線部分において、ガラス被膜が
確実に形成できず、セラミック素体が露出することがあ
った。そしてNiめっきあるいはSnめっき時にめっき
膜が稜線部分に析出し、外部電極間のショート不良が発
生することがあった。また、セラミックウェハーをチッ
プ状にカットする際にはガラス被膜やセラミックウェハ
ーの割れ等を防止するためダイシングカット法を採用し
ているが、これにより製造コストも高価であった。
In the former of those described in the prior art, since the screen printing method is adopted for forming the glass film on the side surface of the ceramic body, the ridge line portion of the ceramic body is used. In some cases, the glass film could not be reliably formed and the ceramic body was exposed. In addition, a plating film may be deposited on the ridge portion during Ni plating or Sn plating, causing a short circuit between external electrodes. Further, when the ceramic wafer is cut into chips, a dicing cut method is used to prevent cracking of the glass coating or the ceramic wafer, but this also leads to high manufacturing costs.

【0005】また、後者においては、外部電極を焼成す
る際に、外部電極とセラミック素体の間に挟まれている
ガラス被膜が外部電極中へ一部拡散するものの、全ては
拡散せず、外部電極とセラミック素体との電気接合不良
が発生するおそれがあった。そこで、本発明の目的は、
製造コストが安価で製造し易く、かつ信頼性の優れた電
子素子及びその製造方法を提供することにある。
Further, in the latter, when the external electrode is fired, the glass coating sandwiched between the external electrode and the ceramic body partially diffuses into the external electrode, but not all diffuses, There is a possibility that defective electrical bonding between the electrode and the ceramic body may occur. Therefore, the purpose of the present invention is to
An object of the present invention is to provide an electronic device having a low manufacturing cost, easy to manufacture, and excellent in reliability, and a manufacturing method thereof.

【0006】[0006]

【課題を解決するための手段】以上の目的を達成するた
め、本発明に係る電子素子は、セラミック素体の表面に
外部電極及び絶縁被膜が設けられており、この絶縁被膜
が無機質材又は有機質材からなることを特徴とする。無
機質材としてはガラス等が使用され、有機質材としては
エポキシ系、フェノール系、アクリル系、メラミン系、
アルキッド系等の樹脂が使用される。そして、セラミッ
ク素体としては正特性サーミスタ素体や負特性サーミス
タ素体やバリスタ素体等が使用される。
In order to achieve the above object, an electronic element according to the present invention is provided with an external electrode and an insulating coating on the surface of a ceramic body, and the insulating coating is an inorganic material or an organic material. It is made of wood. As the inorganic material, glass or the like is used, and as the organic material, epoxy-based, phenol-based, acrylic-based, melamine-based,
An alkyd resin or the like is used. As the ceramic body, a positive characteristic thermistor element body, a negative characteristic thermistor element body, a varistor element body or the like is used.

【0007】また、本発明に係る電子素子の製造方法
は、セラミック素体の表面に外部電極及び絶縁被膜を形
成する工程を備え、絶縁被膜を形成する際にパッド印刷
法を採用することを特徴とする。さらに、本発明に係る
電子素子の製造方法は、外部電極の表面にめっき膜を設
けることを特徴とする。
Further, the method of manufacturing an electronic element according to the present invention comprises a step of forming an external electrode and an insulating coating on the surface of the ceramic body, and adopts a pad printing method when forming the insulating coating. And Furthermore, the method for manufacturing an electronic element according to the present invention is characterized in that a plating film is provided on the surface of the external electrode.

【0008】[0008]

【作用】本発明に係る電子素子は、外部電極を残してセ
ラミック素体表面を絶縁被膜にて覆っているため、めっ
き膜は外部電極上のみに析出する。また、本発明に係る
電子素子の製造方法は、パッド印刷法によって絶縁被膜
を形成するため、図4に示すように、1回の印刷で一つ
の主面全面と二つの側面の略半分の領域に絶縁被膜材が
付与され、印刷作業が低減される。さらに、外部電極の
表面にめっき膜を形成することにより、電子素子を回路
基板等に半田付けする際、めっき膜が外部電極の半田く
われを抑える。
In the electronic device according to the present invention, the surface of the ceramic body is covered with an insulating coating, leaving the external electrodes, so that the plating film is deposited only on the external electrodes. In addition, in the method for manufacturing an electronic device according to the present invention, since the insulating coating is formed by the pad printing method, as shown in FIG. 4, one main surface and one half of the two side surfaces are formed by one printing. The insulating coating material is applied to the printing material to reduce printing work. Furthermore, by forming a plating film on the surface of the external electrode, when the electronic element is soldered to a circuit board or the like, the plating film suppresses soldering of the external electrode.

【0009】[0009]

【実施例】以下、本発明に係る電子素子及びその製造方
法の実施例について添付図面を参照して説明する。各実
施例は電子素子としてサーミスタを例にして説明する。 [第1実施例、図1〜図10]図1に示すように、サー
ミスタはセラミック素体1と、このセラミック素体1の
両端部に設けられた外部電極2と、外部電極2の表面に
設けられたNiめっき膜3及びSn(あるいは半田)め
っき膜4と、セラミック素体1の表面に設けられた絶縁
被膜11とを備えている。
Embodiments of an electronic device and a method of manufacturing the same according to the present invention will be described below with reference to the accompanying drawings. Each embodiment will be described by taking a thermistor as an example of the electronic element. [First Embodiment, FIGS. 1 to 10] As shown in FIG. 1, a thermistor comprises a ceramic body 1, external electrodes 2 provided at both ends of the ceramic body 1, and a surface of the external electrode 2. The Ni plating film 3 and the Sn (or solder) plating film 4 are provided, and the insulating coating 11 provided on the surface of the ceramic body 1.

【0010】セラミック素体1は、正特性サーミスタ素
体、あるいは負特性サーミスタ素体のいずれであっても
よい。絶縁被膜11はガラス等の無機質材やエポキシ系
ソルダーレジストインク等の有機質材が用いられる。こ
の絶縁被膜11を、予め外部電極2が形成されたセラミ
ック素体1の外部電極2を除く表面に形成しておくこと
により、絶縁被膜11が形成されたセラミック素体1に
対してめっき膜を形成しても外部電極2の表面以外の部
分にはめっき膜が形成されないことになる。また、この
絶縁被膜11はサーミスタが回路基板等へ半田付けされ
る際に、半田付け用フラックスがセラミック素体1内部
に侵入するのを防止する効果も有している。
The ceramic body 1 may be either a positive characteristic thermistor element body or a negative characteristic thermistor element body. The insulating coating 11 is made of an inorganic material such as glass or an organic material such as an epoxy solder resist ink. By forming the insulating coating 11 on the surface of the ceramic body 1 on which the external electrodes 2 are formed excluding the external electrodes 2, a plating film is formed on the ceramic body 1 on which the insulating coating 11 is formed. Even if it is formed, the plating film is not formed on the portion other than the surface of the external electrode 2. The insulating coating 11 also has an effect of preventing the soldering flux from entering the inside of the ceramic body 1 when the thermistor is soldered to a circuit board or the like.

【0011】次に、図1に示したサーミスタの製造方法
について説明する。図2に示すセラミック素体1を準備
する。このセラミック素体1は、以下の手順にて製作さ
れる。Mn,Ni,Co,Cu等の化合物をバインダ剤
と共に混練してスラリー状としたものを、ドクターブレ
ード法にてシート状に成形後、所定のサイズにカットし
てグリーンシートとする。このグリーンシートを複数枚
積み重ねて圧着した後、チップ状にカットする。第1実
施例の場合、2.1mm×1.5mm×1.3mmのサ
イズとした。次に、このチップを1300℃の温度で1
時間焼成してセラミック素体1を得る。第1実施例の場
合、1.7mm×1.2mm×1.0mmのサイズのセ
ラミック素体を得た。この後、セラミック素体1をバレ
ル研磨して角隅部分及び稜線部分を丸くする。
Next, a method of manufacturing the thermistor shown in FIG. 1 will be described. The ceramic body 1 shown in FIG. 2 is prepared. The ceramic body 1 is manufactured by the following procedure. Compounds such as Mn, Ni, Co and Cu are kneaded together with a binder agent to form a slurry, which is then formed into a sheet by the doctor blade method and then cut into a predetermined size to obtain a green sheet. After stacking a plurality of these green sheets and pressing them together, they are cut into chips. In the case of the first embodiment, the size is 2.1 mm × 1.5 mm × 1.3 mm. Next, this chip is placed at a temperature of 1300 ° C.
The ceramic body 1 is obtained by firing for a time. In the case of the first example, a ceramic body having a size of 1.7 mm × 1.2 mm × 1.0 mm was obtained. After that, the ceramic body 1 is barrel-polished to round the corners and the ridges.

【0012】次に、図3に示すように、セラミック素体
1の両端部に外部電極2を設ける。外部電極2は、Ag
又はAg−Pd合金を主成分としガラスを固着剤とした
導電性ペーストをディップ法により塗布、乾燥した後、
約800℃の温度にて焼成することにより形成した。次
に、図4に示すように、セラミック素体1の上部に絶縁
被膜11を設ける。絶縁被膜11はパッド印刷法により
塗布後、乾燥される。ここに、パッド印刷法を図5〜図
7を参照して説明する。図5に示すように、鋼鉄製の板
(サイズは1.2mm×2.4mm×0.1mm)の上
面に深さが約0.03mmの凹部20aを設けた凹版2
0を準備する。この凹版20の上面に絶縁被膜材11を
塗布し、ブレード26で凹版20の凹部20aに詰まっ
た以外の余分な絶縁被膜材11を掻き取る。
Next, as shown in FIG. 3, external electrodes 2 are provided on both ends of the ceramic body 1. The external electrode 2 is Ag
Alternatively, after a conductive paste containing Ag-Pd alloy as a main component and glass as a binder is applied by a dip method and dried,
It was formed by firing at a temperature of about 800 ° C. Next, as shown in FIG. 4, an insulating coating 11 is provided on the ceramic body 1. The insulating coating 11 is applied by the pad printing method and then dried. Here, the pad printing method will be described with reference to FIGS. As shown in FIG. 5, an intaglio plate 2 having a recess 20a having a depth of about 0.03 mm provided on the upper surface of a steel plate (size: 1.2 mm × 2.4 mm × 0.1 mm).
Prepare 0. The insulating coating material 11 is applied to the upper surface of the intaglio plate 20, and the blade 26 scrapes off the excess insulating coating material 11 other than the one clogged in the recess 20 a of the intaglio plate 20.

【0013】次に、図6に示すように、表面が凸状曲面
のシリコンゴムからなるパッド28を下降させて、凹部
20aに充填された絶縁被膜材11をパッド28の表面
に転写させ、ついでパッド28を上昇させる。次に、図
7に示すように、セラミック素体1の上方からパッド2
8を下降させて、パッド28の表面に転写されている絶
縁被膜材11をセラミック素体1に押し付けることによ
り、セラミック素体1に絶縁被膜材11を再転写する。
このとき、パッド28の弾力性と柔軟性を利用して、1
回の操作でセラミック素体1の主面及び側面の略上半分
に絶縁被膜材11が付与される。
Next, as shown in FIG. 6, the pad 28 made of silicon rubber having a convex curved surface is lowered to transfer the insulating coating material 11 filled in the concave portion 20a onto the surface of the pad 28, and then, The pad 28 is raised. Next, as shown in FIG. 7, the pad 2 is inserted from above the ceramic body 1.
By lowering 8 and pressing the insulating coating material 11 transferred to the surface of the pad 28 against the ceramic body 1, the insulating coating material 11 is retransferred to the ceramic body 1.
At this time, by utilizing the elasticity and flexibility of the pad 28,
The insulating coating material 11 is applied to substantially the upper half of the main surface and the side surface of the ceramic body 1 by a single operation.

【0014】このように、パッド印刷法は、スクリーン
印刷法と異なり、1回の操作でセラミック素体1の主面
だけでなく側面にも絶縁被膜11を形成することができ
るので、印刷作業を低減することができる。また、パッ
ド印刷法によればセラミック素体1の稜線部分にも絶縁
被膜11が確実に形成されるため、後述の外部電極2上
へのめっき膜3,4形成の際に、めっき膜が稜線部分に
析出する心配がなくなり、外部電極2間のショートを防
止することができる。
As described above, unlike the screen printing method, the pad printing method can form the insulating coating 11 not only on the main surface of the ceramic body 1 but also on the side surfaces thereof in a single operation. It can be reduced. Further, according to the pad printing method, the insulating coating film 11 is surely formed even on the ridgeline portion of the ceramic body 1. Therefore, when the plated films 3 and 4 are formed on the external electrode 2 which will be described later, the plated film is ridgelined. It is possible to prevent short-circuiting between the external electrodes 2 without worrying about deposition on the part.

【0015】さらに、スクリーン印刷法では印刷面に平
滑性が要求されるので、外部電極2が形成されたセラミ
ック素体1上は印刷することができなかった。外部電極
2の膜厚分だけセラミック素体1の表面に凹凸が生じる
からである。これに対して、パッド印刷法は凹凸面上へ
の印刷が可能であるので、外部電極2が形成されたセラ
ミック素体1上にも絶縁被膜11を形成することができ
る。さらに、パッド印刷法は、粘度の高い絶縁被膜材を
採用することができ、セラミック素体1の稜線部分にも
絶縁被膜11を形成させ易い。また、パッド印刷法では
凹版20の凹部20aの寸法を設計変更することによ
り、絶縁被膜11のサイズを精度良く変更することがで
き、外部電極2と絶縁被膜11が重ならないようにする
こともできる。
Further, since the screen printing method requires smoothness on the printing surface, it is impossible to print on the ceramic body 1 on which the external electrodes 2 are formed. This is because irregularities are formed on the surface of the ceramic body 1 by the film thickness of the external electrode 2. On the other hand, since the pad printing method can print on the uneven surface, the insulating coating 11 can be formed also on the ceramic body 1 on which the external electrodes 2 are formed. Further, in the pad printing method, an insulating coating material having a high viscosity can be adopted, and the insulating coating 11 can be easily formed on the ridgeline portion of the ceramic body 1. In the pad printing method, the size of the insulating coating 11 can be accurately changed by changing the design of the size of the recess 20a of the intaglio 20, and the external electrode 2 and the insulating coating 11 can be prevented from overlapping. .

【0016】次に、図8ないし図10に示すように、セ
ラミック素体1の下部にパッド印刷法により絶縁被膜1
1を塗布後、乾燥する。次に、絶縁被膜11の材料とし
て、ガラスペーストを採用した場合には約600℃の温
度で焼成し、エポキシ系UV硬化型ソルダーレジストイ
ンクを採用した場合には、高圧水銀灯を約5分間照射し
て硬化させる。
Next, as shown in FIGS. 8 to 10, the insulating coating 1 is formed on the lower portion of the ceramic body 1 by a pad printing method.
After applying No. 1, it is dried. Next, when glass paste is used as the material of the insulating coating 11, it is fired at a temperature of about 600 ° C. When epoxy-based UV-curable solder resist ink is used, it is irradiated with a high pressure mercury lamp for about 5 minutes. To cure.

【0017】次に、図1に示すように、外部電極2上に
電解Niめっき膜3、ついで電解Sn(あるいは半田)
めっき膜4を形成する。これらのめっき膜3,4は、サ
ーミスタを回路基板等に半田付けする際に、外部電極2
を半田くわれから保護する。なお、外部電極2上にめっ
き膜を必らずしも形成する必要はない。ただし、めっき
膜を形成しない場合には、外部電極2の材料の金属成分
として、Agの替わりに半田くわれに対して強いAg−
Pd合金を採用するのが好ましい。
Next, as shown in FIG. 1, an electrolytic Ni plating film 3 and then electrolytic Sn (or solder) are formed on the external electrodes 2.
The plating film 4 is formed. These plating films 3 and 4 are used for the external electrodes 2 when the thermistor is soldered to a circuit board or the like.
Protects the solder from scratches. It is not always necessary to form a plating film on the external electrode 2. However, in the case where the plating film is not formed, the metal component of the material of the external electrode 2 is Ag-strong instead of Ag, which is strong against soldering.
It is preferable to employ a Pd alloy.

【0018】[第2実施例、図11〜図14]第2実施
例は、絶縁被膜材の粘度が比較的高い場合の例について
説明する。図11に示すように、サーミスタはセラミッ
ク素体31と、このセラミック素体31の両端部に設け
られた外部電極32と、外部電極32の表面に設けられ
たNiめっき膜33及びSnめっき膜34と、セラミッ
ク素体31の表面に設けられた絶縁被膜41とを備えて
いる。この絶縁被膜41を、予めセラミック素体31の
表面に形成しておくことにより、外部電極の表面以外の
部分にはめっき膜が形成されないことになる。
[Second Embodiment, FIGS. 11 to 14] In the second embodiment, an example in which the insulating coating material has a relatively high viscosity will be described. As shown in FIG. 11, the thermistor includes a ceramic body 31, external electrodes 32 provided on both ends of the ceramic body 31, and a Ni plating film 33 and a Sn plating film 34 provided on the surface of the external electrode 32. And an insulating coating 41 provided on the surface of the ceramic body 31. By forming the insulating coating 41 on the surface of the ceramic body 31 in advance, the plating film is not formed on the portions other than the surface of the external electrode.

【0019】次に、図11に示したサーミスタの製造方
法について説明する。図12に示すバレル研磨処理した
セラミック素体31を準備する。このセラミック素体3
1は前記第1実施例のセラミック素体1と同様の手順に
て製作される。セラミック素体31の上部に絶縁被膜4
1を設ける。絶縁被膜41はパッド印刷法により塗布さ
れた後、乾燥される。次に、図13に示すように、セラ
ミック素体31の下部にパッド印刷法により絶縁被膜1
1を塗布した後、乾燥する。
Next, a method of manufacturing the thermistor shown in FIG. 11 will be described. A ceramic body 31 subjected to barrel polishing shown in FIG. 12 is prepared. This ceramic body 3
1 is manufactured by the same procedure as the ceramic body 1 of the first embodiment. Insulating film 4 on top of the ceramic body 31
1 is provided. The insulating coating 41 is applied by the pad printing method and then dried. Next, as shown in FIG. 13, the insulating coating 1 is formed on the lower portion of the ceramic body 31 by a pad printing method.
After applying No. 1, it is dried.

【0020】次に、図14に示すように、セラミック素
体31の両端部に導電性ペーストをディップ法にて塗
布、乾燥した後、約800℃の温度で焼成することによ
り外部電極32を形成する。このとき、絶縁被膜11も
同時に焼成される。次に、図11に示すように、外部電
極32上に電解Niめっき膜33、ついで電解Snめっ
き膜34を形成する。
Next, as shown in FIG. 14, a conductive paste is applied to both ends of the ceramic body 31 by a dipping method, dried, and then baked at a temperature of about 800 ° C. to form the external electrodes 32. To do. At this time, the insulating coating 11 is also fired at the same time. Next, as shown in FIG. 11, an electrolytic Ni plating film 33 and then an electrolytic Sn plating film 34 are formed on the external electrodes 32.

【0021】以上の方法において、前記第1実施例の作
用効果に加えて、外部電極32を焼成する時に絶縁被膜
41も併せて焼成するので、製造工程が簡略になり、さ
らに、製造コストの低減を図ることができる。
In the above method, in addition to the effects of the first embodiment, since the insulating coating 41 is also baked when the external electrode 32 is baked, the manufacturing process is simplified and the manufacturing cost is reduced. Can be achieved.

【0022】[他の実施例]なお、本発明に係る電子素
子及びその製造方法は前記実施例に限定するものではな
く、その要旨の範囲内で種々に変形することができる。
[Other Embodiments] The electronic device and the method for manufacturing the same according to the present invention are not limited to the above embodiments, but can be variously modified within the scope of the invention.

【0023】セラミック素体は外部電極と絶縁被膜にて
完全に覆われていなくてもよい。すなわち、図15に示
すように、外部電極52と絶縁被膜53との間にセラミ
ック素体51が露出するものであってもよい。また、セ
ラミック素体は、正特性サーミスタ素体や負特性サーミ
スタ素体以外に、バリスタ素体等であってもよい。さら
に、有機質材からなる絶縁被膜として、エポキシ系のU
V硬化型ソルダーレジストインク以外に、フェノール
系、アクリル系、メラミン系、アルキッド系等のインク
であってもよいし、熱硬化型のインクであってもよい。
The ceramic body may not be completely covered with the external electrodes and the insulating coating. That is, as shown in FIG. 15, the ceramic body 51 may be exposed between the external electrode 52 and the insulating coating 53. Further, the ceramic body may be a varistor body or the like in addition to the positive characteristic thermistor body and the negative characteristic thermistor body. Furthermore, as an insulating coating made of organic material, epoxy-based U
In addition to the V-curable solder resist ink, a phenol-based ink, an acrylic-based ink, a melamine-based ink, an alkyd-based ink, or a thermosetting ink may be used.

【0024】[0024]

【発明の効果】以上の説明で明らかなように、本発明に
よれば、無機質材又は有機質材からなる絶縁被膜にて外
部電極を残してセラミック素体表面を覆っているので、
めっき膜は外部電極上にのみに析出させることができ
る。そして、電子素子を回路基板等に半田付けする際に
は、半田付け用フラックスかセラミック素体内部に侵入
するのをこの絶縁被膜が防止するので、電子素子の特性
や信頼性の低下を招かない。
As is apparent from the above description, according to the present invention, the surface of the ceramic body is covered with the insulating film made of the inorganic material or the organic material while leaving the external electrodes.
The plating film can be deposited only on the external electrode. When the electronic element is soldered to the circuit board or the like, the insulating coating prevents the soldering flux or the ceramic element body from entering the inside of the ceramic element body, so that the characteristics and reliability of the electronic element are not deteriorated. .

【0025】また、パッド印刷法によって絶縁被膜を形
成した場合には、1回の印刷で一つの主面全面と二つの
側面の略半分の領域に絶縁被膜を形成することができる
ので、印刷作業を低減することができる。また、パッド
印刷法によれば、セラミック素体の稜線部分にも絶縁被
膜を確実に形成することができるので、めっき膜が稜線
部分に析出せず、外部電極間のショート不良が発生する
こともない。そして、パッド印刷法は凹凸面上への印刷
が可能であるので、外部電極が形成されて表面が平滑で
ないセラミック素体上にも絶縁被膜を形成することがで
きる。
Further, when the insulating coating is formed by the pad printing method, the insulating coating can be formed in the entire area of one main surface and approximately half the areas of the two side surfaces by one printing. Can be reduced. Further, according to the pad printing method, the insulating coating can be surely formed even on the ridgeline portion of the ceramic body, so that the plating film does not deposit on the ridgeline portion and a short circuit defect between the external electrodes may occur. Absent. Further, since the pad printing method can print on the uneven surface, it is possible to form the insulating coating even on the ceramic body on which the external electrodes are formed and the surface is not smooth.

【0026】さらに、外部電極の表面にめっき膜を形成
することにより、電子素子を回路基板等に半田付けする
際、外部電極はめっき膜によって半田くわれから保護さ
れ、高信頼性の電子素子が得られる。
Furthermore, by forming a plating film on the surface of the external electrode, when the electronic element is soldered to a circuit board or the like, the external electrode is protected from being soldered by the plating film, and a highly reliable electronic element is provided. can get.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に係る電子素子の第1実施例を示す断面
図。
FIG. 1 is a sectional view showing a first embodiment of an electronic device according to the present invention.

【図2】図1に示した電子素子の製造手順を示す斜視
図。
FIG. 2 is a perspective view showing a manufacturing procedure of the electronic device shown in FIG.

【図3】図2に続く製造手順を示す斜視図。FIG. 3 is a perspective view showing a manufacturing procedure following that of FIG. 2;

【図4】図3に続く製造手順を示す斜視図。FIG. 4 is a perspective view showing a manufacturing procedure following that of FIG. 3;

【図5】パッド印刷法を説明するための断面図。FIG. 5 is a sectional view for explaining a pad printing method.

【図6】図5に続くパッド印刷法を説明するための断面
図。
FIG. 6 is a sectional view for explaining the pad printing method following FIG. 5;

【図7】図6に続くパッド印刷法を説明するための断面
図。
FIG. 7 is a sectional view for explaining the pad printing method following FIG. 6;

【図8】図4に続く製造手順を示す斜視図。FIG. 8 is a perspective view showing a manufacturing procedure following that of FIG. 4;

【図9】図8のIX−IX断面図。9 is a sectional view taken along line IX-IX in FIG.

【図10】図8のX−X断面図。10 is a sectional view taken along line XX of FIG.

【図11】本発明に係る電子素子の第2実施例を示す断
面図。
FIG. 11 is a sectional view showing a second embodiment of the electronic device according to the present invention.

【図12】図11に示した電子素子の製造手順を示す斜
視図。
12 is a perspective view showing a manufacturing procedure of the electronic element shown in FIG.

【図13】図12に続く製造手順を示す斜視図。FIG. 13 is a perspective view showing a manufacturing procedure following that of FIG. 12;

【図14】図13に続く製造手順を示す斜視図。FIG. 14 is a perspective view showing a manufacturing procedure following that of FIG. 13;

【図15】他の実施例を示す断面図。FIG. 15 is a cross-sectional view showing another embodiment.

【符号の説明】[Explanation of symbols]

1…セラミック素体 2…外部電極 3,4…めっき膜 11…絶縁被膜 31…セラミック素体 32…外部電極 33,34…めっき膜 41…絶縁被膜 51…セラミック素体 52…外部電極 53…絶縁被膜 DESCRIPTION OF SYMBOLS 1 ... Ceramic element 2 ... External electrode 3,4 ... Plating film 11 ... Insulating film 31 ... Ceramic element 32 ... External electrode 33, 34 ... Plating film 41 ... Insulating film 51 ... Ceramic element 52 ... External electrode 53 ... Insulation Film

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 H01C 17/00 H01C 17/00 A ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification number Office reference number FI technical display location H01C 17/00 H01C 17/00 A

Claims (9)

【特許請求の範囲】[Claims] 【請求項1】 電気的機能を有するセラミック素体と、 前記セラミック素体の表面に設けられた外部電極と、 前記セラミック素体の表面に設けられた、無機質材又は
有機質材からなる絶縁被膜と、 を備えたことを特徴とする電子素子。
1. A ceramic element body having an electrical function, an external electrode provided on the surface of the ceramic element body, and an insulating coating made of an inorganic material or an organic material provided on the surface of the ceramic element body. An electronic device comprising:
【請求項2】 セラミック素体が、正特性サーミスタ素
体又は負特性サーミスタ素体又はバリスタ素体のいずれ
かであることを特徴とする請求項1記載の電子素子。
2. The electronic element according to claim 1, wherein the ceramic body is either a positive characteristic thermistor element body, a negative characteristic thermistor element body, or a varistor element body.
【請求項3】 セラミック素体の表面に外部電極を形成
する工程と、 前記セラミック素体の表面にパッド印刷法にて絶縁被膜
を形成する工程と、 を備えたことを特徴とする電子素子の製造方法。
3. An electronic element comprising: a step of forming external electrodes on the surface of a ceramic body; and a step of forming an insulating coating on the surface of the ceramic body by a pad printing method. Production method.
【請求項4】 セラミック素体の表面に外部電極を形成
した後、前記外部電極を残して前記セラミック素体の表
面に絶縁被膜を形成することを特徴とする請求項3記載
の電子素子の製造方法。
4. The method of manufacturing an electronic device according to claim 3, wherein after forming an external electrode on the surface of the ceramic body, an insulating coating is formed on the surface of the ceramic body while leaving the external electrode. Method.
【請求項5】 外部電極が形成されるべき部分を残して
セラミック素体の表面に絶縁被膜を形成した後、前記セ
ラミック素体の表面に外部電極を形成することを特徴と
する請求項3記載の電子素子の製造方法。
5. The external electrode is formed on the surface of the ceramic body after forming an insulating coating on the surface of the ceramic body, leaving a portion where the external electrode is to be formed. Of manufacturing electronic device of.
【請求項6】 外部電極の表面にめっき膜を設けること
を特徴とする請求項3,4又は5記載の電子素子の製造
方法。
6. The method of manufacturing an electronic element according to claim 3, wherein a plating film is provided on the surface of the external electrode.
【請求項7】 絶縁被膜が無機質材又は有機質材からな
ることを特徴とする請求項3,4,5又は6記載の電子
素子の製造方法。
7. The method of manufacturing an electronic element according to claim 3, 4, 5 or 6, wherein the insulating coating is made of an inorganic material or an organic material.
【請求項8】 セラミック素体が電気的機能を有するこ
とを特徴とする請求項3,4,5,6又は7記載の電子
素子の製造方法。
8. The method for manufacturing an electronic element according to claim 3, 4, 5, 6 or 7, wherein the ceramic body has an electric function.
【請求項9】 セラミック素体が、正特性サーミスタ素
体又は負特性サーミスタ素体又はバリスタ素体のいずれ
かであることを特徴とする請求項3,4,5,6,7又
は8記載の電子素子の製造方法。
9. The ceramic body is either a positive characteristic thermistor body, a negative characteristic thermistor body or a varistor body, and the ceramic body is characterized in that Manufacturing method of electronic device.
JP7127919A 1995-05-26 1995-05-26 Electronic element and its production Pending JPH08321405A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7127919A JPH08321405A (en) 1995-05-26 1995-05-26 Electronic element and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7127919A JPH08321405A (en) 1995-05-26 1995-05-26 Electronic element and its production

Publications (1)

Publication Number Publication Date
JPH08321405A true JPH08321405A (en) 1996-12-03

Family

ID=14971890

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7127919A Pending JPH08321405A (en) 1995-05-26 1995-05-26 Electronic element and its production

Country Status (1)

Country Link
JP (1) JPH08321405A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008306086A (en) * 2007-06-11 2008-12-18 Ngk Spark Plug Co Ltd Thermistor element and manufacturing method of thermistor element
JP2021028947A (en) * 2019-08-09 2021-02-25 株式会社村田製作所 Electronic component and manufacturing method of the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008306086A (en) * 2007-06-11 2008-12-18 Ngk Spark Plug Co Ltd Thermistor element and manufacturing method of thermistor element
JP2021028947A (en) * 2019-08-09 2021-02-25 株式会社村田製作所 Electronic component and manufacturing method of the same

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