JPH0832118A - Light emitting diode - Google Patents

Light emitting diode

Info

Publication number
JPH0832118A
JPH0832118A JP6166774A JP16677494A JPH0832118A JP H0832118 A JPH0832118 A JP H0832118A JP 6166774 A JP6166774 A JP 6166774A JP 16677494 A JP16677494 A JP 16677494A JP H0832118 A JPH0832118 A JP H0832118A
Authority
JP
Japan
Prior art keywords
chip
hole
emitting diode
led
wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6166774A
Other languages
Japanese (ja)
Inventor
Kazuyoshi Tsuji
和義 辻
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP6166774A priority Critical patent/JPH0832118A/en
Publication of JPH0832118A publication Critical patent/JPH0832118A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch

Abstract

PURPOSE:To provide a chip type light emitting diode which has a high luminance density despite of its simple structure and can be easily carried by suction. CONSTITUTION:In a light emitting diode provided with a light reflecting case 1, the case 1 has a chip hole 1a formed in the shape of an inverted truncated cone for fitting light emitting diode chip and a wire hole 1b which is communicated with part of the hole 1a and used for passing wire bonding wires.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は光反射ケースを有する発
光ダイオード(LED)の形状に関し、詳しくはその光
反射ケースの形状に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the shape of a light emitting diode (LED) having a light reflecting case, and more particularly to the shape of the light reflecting case.

【0002】[0002]

【従来の技術】従来のチップ型LEDの形状としては、
図3(a)に示すようなものがある。図3(a)は樹脂
封止前のLEDの斜視説明図であり、LEDチップ取り
付け用の切頭四角錘状のチップ孔1aが貫通して形成さ
れた光反射ケース1と、LEDチップ3がダイボンディ
ング及びワイヤボンディングされたプリント基板2から
なり、光反射ケース1とプリント基板2が接着剤等で固
着された後、チップ孔1aにエポキシ等の樹脂が注入さ
れて完成したLEDとなる。
2. Description of the Related Art As the shape of a conventional chip type LED,
There is one as shown in FIG. FIG. 3 (a) is a perspective explanatory view of the LED before resin sealing. The LED chip 3 and the light reflection case 1 formed by penetrating a truncated square pyramidal chip hole 1 a for mounting the LED chip are shown. The printed board 2 is die-bonded and wire-bonded. After the light reflection case 1 and the printed board 2 are fixed to each other with an adhesive or the like, a resin such as epoxy is injected into the chip hole 1a to complete the LED.

【0003】図3の従来例では、光反射ケース1のチッ
プ孔1aは逆切頭四角錐状を呈し、一方側(基板側)か
ら他方側(開放側)に放射状に拡開しており、基板側に
はプリント基板2が固着されている。プリント基板2の
固着面にはLEDチップ3をボンディングするために一
対のパッド5a及び5bが形成されており、各パッドの
一端はそれぞれチップ型LEDの電極5となっている。
各パッドはLEDチップ3からの光の光反射性を良くす
るために金メッキが施されると共に、できるだけ広く形
成されている。パッド5aにはLEDチップ3がダイボ
ンディングされ、LEDチップ3とパッド5bはワイヤ
4によるワイヤボンディングにより接続される。LED
チップ3及びワイヤ4を含めて、チップ孔1aがエポキ
シ樹脂等の封止樹脂6で封止されて、チップ型LEDが
形成される。
In the conventional example shown in FIG. 3, the chip hole 1a of the light reflection case 1 has an inverted truncated quadrangular pyramid shape and is radially expanded from one side (substrate side) to the other side (open side). The printed board 2 is fixed to the board side. A pair of pads 5a and 5b for bonding the LED chip 3 are formed on the fixed surface of the printed board 2, and one end of each pad serves as an electrode 5 of the chip-type LED.
Each pad is plated with gold to improve the light reflectivity of the light from the LED chip 3 and is formed as wide as possible. The LED chip 3 is die-bonded to the pad 5a, and the LED chip 3 and the pad 5b are connected by wire bonding with the wire 4. LED
The chip hole 1a including the chip 3 and the wire 4 is sealed with a sealing resin 6 such as an epoxy resin to form a chip LED.

【0004】尚、図3(b)及び図3(c)は図3
(a)のLEDを樹脂封止した時のY3−Y4における
断面の異なる状態を示しており、図3(b)は封止樹脂
が光反射ケース1の開放側平面よりも陥没している場
合、図3(c)は封止樹脂が光反射ケース1の開放側平
面よりも突出している場合を示している。
3 (b) and 3 (c) are shown in FIG.
FIG. 3B shows a state where the cross section of Y3-Y4 is different when the LED of FIG. 3A is resin-sealed, and FIG. 3B shows the case where the sealing resin is depressed from the open side plane of the light reflection case 1. 3C shows the case where the sealing resin projects from the open side plane of the light reflection case 1.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、上記の
ようなチップ型LEDでは、封止樹脂6を光反射ケース
1のチップ孔1aに注入した時に、封止樹脂6の注入量
によって図3(b)及び図3(c)に示すように封止樹
脂6の開放側面が光反射ケース1の開放側平面と同一の
平面にならないことが多く、LED完成後に図4に示す
ような吸着ノズル9により吸着して搬送する場合に、図
3(b)の場合には吸着ノズル9が開放側平面と位置ず
れすることがあること、図3(c)の場合には吸着ノズ
ル9の吸着面と光反射ケース1の開放側平面が密着しな
いことがあること等の理由により、吸着ノズル9に空気
が流入してチップ型LEDを吸着できないことがあると
いう問題がある。
However, in the chip type LED as described above, when the sealing resin 6 is injected into the chip hole 1a of the light reflection case 1, the amount of the injection of the sealing resin 6 is changed as shown in FIG. ) And as shown in FIG. 3 (c), the open side surface of the sealing resin 6 often does not become the same plane as the open side plane of the light reflection case 1, and after the LED is completed, the suction nozzle 9 as shown in FIG. In the case of suction and conveyance, the suction nozzle 9 may be displaced from the open side plane in the case of FIG. 3B, and in the case of FIG. There is a problem that air may flow into the suction nozzle 9 and the chip type LED may not be adsorbed due to the fact that the open side plane of the reflection case 1 may not come into close contact.

【0006】また、チップ孔1a内でワイヤボンディン
グも行うためにチップ孔1aの開口部が大きくなって光
反射ケース1の大きさとほぼ同程度の大きさにしかなら
ず、LEDのチップ孔1aを小さくして輝度密度を上げ
る事もできなかった。更に、外形が単純な四角形なの
で、外形によりLEDの極性を見分ける事ができないた
め、極性を示すためのマーキングまたはインデックス等
をつける必要があった。
Further, since wire bonding is also performed in the chip hole 1a, the opening of the chip hole 1a becomes large and the size is almost the same as the size of the light reflection case 1. Therefore, the chip hole 1a of the LED is made small. It was not possible to increase the brightness density. Further, since the outer shape is a simple quadrangle, the polarity of the LED cannot be discriminated by the outer shape, and it is necessary to add markings or indexes for indicating the polarity.

【0007】そこで本発明は、簡単な構造で有りながら
これらの問題を解決し、輝度密度が高く、しかも吸着に
よる搬送が容易に可能なチップ型LEDを提供すること
を目的とする。
Therefore, an object of the present invention is to solve these problems while having a simple structure, and to provide a chip-type LED which has a high luminance density and can be easily transported by adsorption.

【0008】[0008]

【課題を解決するための手段】上述の問題を解決するた
めに、請求項1の記載に係わる発光ダイオードは、光反
射ケースを有する発光ダイオードにおいて、光反射ケー
スは発光ダイオードチップ取り付け用の逆切頭円錐状の
チップ孔を有すると共に、チップ孔の一部につながるワ
イヤボンディングのワイヤを通すためのワイヤ孔を設け
た事を特徴とする。また、請求項2の記載に係わる発光
ダイオードは、チップ型発光ダイオードであることを特
徴とする。
In order to solve the above problems, the light emitting diode according to claim 1 is a light emitting diode having a light reflecting case, wherein the light reflecting case is a reverse cut for mounting a light emitting diode chip. It is characterized in that it has a conical tip hole and a wire hole for passing a wire for wire bonding connected to a part of the tip hole. The light emitting diode according to claim 2 is a chip type light emitting diode.

【0009】[0009]

【作用及び効果】本発明のような光反射ケースの形状を
とることにより、チップ孔を小さな逆切頭円錘状にで
き、光反射ケースの開放側の吸着平面を従来に比べて広
く取れるので、吸着ノズルの多少の位置ずれに関係なく
LEDを容易に吸着できるようになる。また、チップ孔
をほぼ円形状に形成できるので、封止樹脂の形状を容易
に凸レンズ状または凹レンズ状にすることができると共
に、LEDチップと光反射ケースの反射面との距離を近
づけることができるので、輝度密度を容易に上げる事が
できるようになる。ワイヤ孔が有るので、外形によりL
EDの極性を容易に見分けられるので、極性を示すため
のマーキングまたはインデックス等が不要になるという
効果が有る。ワイヤ孔により樹脂量が調整できるので、
光反射ケースの開放側の平面から樹脂が突出しないよう
することが容易にできる。更に、パッドを金メッキしな
いでも良いのでプリント基板の金メッキの工程を省略で
きるという効果がある。
By taking the shape of the light reflecting case as in the present invention, the chip hole can be made into a small inverted truncated cone shape, and the adsorption plane on the open side of the light reflecting case can be made wider than in the conventional case. Therefore, the LED can be easily sucked regardless of the slight displacement of the suction nozzle. In addition, since the chip hole can be formed in a substantially circular shape, the shape of the sealing resin can be easily made into a convex lens shape or a concave lens shape, and the distance between the LED chip and the reflection surface of the light reflection case can be reduced. Therefore, the brightness density can be easily increased. Since there is a wire hole, L depending on the outer shape
Since the polarity of the ED can be easily identified, there is an effect that a marking or index for indicating the polarity is unnecessary. Since the amount of resin can be adjusted by the wire hole,
It is easy to prevent the resin from protruding from the flat surface on the open side of the light reflection case. Furthermore, since the pads need not be gold-plated, there is an effect that the step of gold-plating the printed circuit board can be omitted.

【0010】[0010]

【実施例】以下、本発明の一実施例を図1を参照しなが
ら詳細に説明する。尚、本明細書では全図面を通して、
同一または同様の構成要素には同一の符号を付してい
る。図1は本発明によるチップ型発光ダイオード(LE
D)素子の構造例を示し、図1(a)はLEDの組立前
の斜視説明図である。この図面において、LEDは光反
射ケース1とLEDチップ3が設置されたプリント基板
2とからなる。光反射ケース1はLEDチップ3を取り
付けるために一方側(基板側)から他方側(開放側)に
放射状に拡開した逆切頭円錐状のチップ孔1a及びチッ
プ孔1aにつながるワイヤボンディングのワイヤを通す
ためのほぼ三角柱状のワイヤ孔1bを貫通して形成され
ている。プリント基板2はLEDチップ3がダイボンデ
ィング及びワイヤボンディングされるものであり、プリ
ント基板2上にLEDチップ3をダイボンディング及び
ワイボンディングしてから、光反射ケース1及びプリン
ト基板2が接着剤等により固着され、チップ孔1a及び
ワイヤ孔1bにエポキシ等の封止樹脂6が注入されてチ
ップ型LEDとなる。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described in detail below with reference to FIG. Throughout the drawings, in this specification,
The same or similar components are designated by the same reference numerals. FIG. 1 shows a chip type light emitting diode (LE) according to the present invention.
D) shows a structural example of the element, and FIG. 1A is a perspective explanatory view before assembly of the LED. In this drawing, the LED comprises a light reflection case 1 and a printed circuit board 2 on which an LED chip 3 is installed. The light reflection case 1 has a reverse frusto-conical chip hole 1a radially expanded from one side (substrate side) to the other side (open side) for mounting the LED chip 3 and a wire bonding wire connected to the chip hole 1a. It is formed so as to penetrate through a wire hole 1b having a substantially triangular prism shape for passing through. The LED chip 3 is die-bonded and wire-bonded to the printed circuit board 2. After the LED chip 3 is die-bonded and wire-bonded onto the printed circuit board 2, the light reflection case 1 and the printed circuit board 2 are bonded by an adhesive or the like. It is fixed, and the sealing resin 6 such as epoxy is injected into the chip hole 1a and the wire hole 1b to form a chip type LED.

【0011】本実施例のチップ型LEDの大きさは長さ
約3mm、幅約2mm、高さ約1.5mmで、チップ孔
1aは開放側の直径が約0.8mmから約1.6mm、
基板側の直径はLEDチップ3がダイボンディングでき
るだけの大きさをした逆切頭円錐状をしている。このよ
うに、チップ孔1aの大きさを従来に比べて小さくでき
るので、光反射ケース1の開放側の吸着平面を従来に比
べて広く取れるようになっている。
The size of the chip type LED of this embodiment is about 3 mm in length, about 2 mm in width and about 1.5 mm in height, and the diameter of the chip hole 1a on the open side is about 0.8 mm to about 1.6 mm.
The diameter on the substrate side is an inverted frustoconical shape that is large enough for the LED chip 3 to be die-bonded. In this way, the size of the chip hole 1a can be made smaller than in the conventional case, so that the adsorption plane on the open side of the light reflection case 1 can be made wider than in the conventional case.

【0012】光反射ケース1はチタン等を含有した反射
型グレードの液晶ポリマ等を成分としており、発光光の
色にかかわらず反射効率の良い白色をしていることが多
い。チップ孔1aは逆切頭円錐状の光反射面によりLE
Dチップ3の発光光を反射するように形成され、ワイヤ
孔1bはほぼ三角柱状をしており、チップ孔1aとの連
結部はワイヤ4が位置ずれしても容易に通せる幅を有し
ている。
The light-reflecting case 1 contains a liquid crystal polymer of a reflection type containing titanium or the like as a component, and often has a white color with good reflection efficiency regardless of the color of emitted light. The tip hole 1a is LE with an inverted frustoconical light reflecting surface.
The wire hole 1b is formed so as to reflect the light emitted from the D chip 3, and the wire hole 1b has a substantially triangular prism shape. The connecting portion with the chip hole 1a has a width that allows the wire 4 to easily pass through even if the wire 4 is displaced. ing.

【0013】エポキシ樹脂系の基材からなるプリント基
板2の固着面には、ボンディングのために一対のパッド
5a及び5bが形成されており、各パッドの一端はそれ
ぞれチップ型LEDの電極5となっている。パッド5a
及び5bは、光反射性を良くするために金メッキが施さ
れると共に、LEDチップ3からの光の反射率を上げる
ためにできるだけ広く形成されている。パッド5aは少
なくともその一部がチップ孔1aの下面に位置し、パッ
ド5a上にはLEDチップ3が金や銀、または半田等の
導電性ペーストによりダイボンディングされ、パッド5
bは少なくともその一部がワイヤ孔1bの下面に位置
し、LEDチップ3とパッド5bは直径が数10μmの
金やアルミニウムからなるワイヤ4によるワイヤボンデ
ィングにより接続されている。この状態のプリント基板
2と光反射ケース1の基板側とが接着剤等により固着さ
れた後、LEDチップ3及びワイヤ4を含めて、チップ
孔1a及びワイヤ孔1bはエポキシ樹脂等の封止樹脂6
により封止されてLEDが完成する。
A pair of pads 5a and 5b are formed for bonding on the fixing surface of the printed circuit board 2 made of an epoxy resin base material, and one end of each pad serves as the electrode 5 of the chip type LED. ing. Pad 5a
And 5b are plated with gold to improve the light reflectivity, and are formed as wide as possible to increase the reflectance of the light from the LED chip 3. At least a part of the pad 5a is located on the lower surface of the chip hole 1a, and the LED chip 3 is die-bonded onto the pad 5a with a conductive paste such as gold, silver, or solder.
At least a part of b is located on the lower surface of the wire hole 1b, and the LED chip 3 and the pad 5b are connected by wire bonding with a wire 4 made of gold or aluminum having a diameter of several tens of μm. After the printed board 2 and the board side of the light reflection case 1 in this state are fixed by an adhesive or the like, the chip hole 1a and the wire hole 1b including the LED chip 3 and the wire 4 are sealed with epoxy resin or the like. 6
Then, the LED is completed.

【0014】図1(b)は図1(a)のLEDを、エポ
キシ樹脂等の封止樹脂6により凸レンズ状に封止した時
のY1−Y2における断面を示している。尚、図1の実
施例ではワイヤ孔1bの形状はほぼ三角柱状で基板に対
して垂直に形成されているが、図2(a)及び図2
(b)の各上面図に示すような形状であっても良い。図
2(a)のワイヤ孔1bはほぼ四角形で、プリント基板
2から離れるに従って開口部が小さくなっていくような
形状をしており、図2(b)のワイヤ孔1bは図1の実
施例とは逆方向に広がった三角形もしくは台形で、プリ
ント基板2から離れるに従って開口部が大きくなってい
くような形状を呈している。ワイヤ孔1bの開放面での
形状及びその孔の広がり方の組み合わせは任意で構わな
い。
FIG. 1B shows a cross section taken along line Y1-Y2 when the LED of FIG. 1A is sealed in a convex lens shape with a sealing resin 6 such as an epoxy resin. In the embodiment shown in FIG. 1, the wire hole 1b has a substantially triangular prism shape and is formed perpendicularly to the substrate.
The shape shown in each top view of FIG. The wire hole 1b of FIG. 2 (a) is substantially quadrangular and has a shape such that the opening becomes smaller as it is farther from the printed circuit board 2, and the wire hole 1b of FIG. 2 (b) is the same as the embodiment of FIG. It has a triangular shape or a trapezoidal shape that is widened in the opposite direction, and has a shape in which the opening becomes larger as the distance from the printed circuit board 2 increases. The combination of the shape of the wire hole 1b on the open surface and the way in which the hole spreads may be arbitrary.

【0015】また、上述の説明ではプリント基板2にL
EDチップ3をダイボンディングしてからパッド5bと
のワイヤボンディングを行い、その後に光反射ケース1
とプリント基板2を固着しているが、両者を固着した後
でLEDチップ3のダイボンディング及びパッド5bと
のワイヤボンディングを行い樹脂封止しても良い。更
に、光反射ケース1の基板側のチップ孔1aの大きさ
は、LEDチップ3をダイボンディングできるだけの大
きさがあれば良く、パッド5aによる光反射を行わない
で、光反射ケース1のチップ孔1aの反射面による光反
射だけで従来の輝度を得ることができるので、パッド5
a及び5bを必ずしも金メッキしなくても良い。
In the above description, the printed circuit board 2 has L
The ED chip 3 is die-bonded and then wire-bonded to the pad 5b, and then the light reflection case 1
Although the printed circuit board 2 and the printed circuit board 2 are fixed to each other, resin bonding may be performed after the both are fixed to each other by performing die bonding of the LED chip 3 and wire bonding with the pad 5b. Further, the size of the chip hole 1a on the substrate side of the light reflection case 1 may be any size as long as the LED chip 3 can be die-bonded, and the chip hole of the light reflection case 1 is not performed by the light reflection by the pad 5a. Since the conventional brightness can be obtained only by the light reflection by the reflecting surface of 1a, the pad 5
The a and 5b do not necessarily need to be gold-plated.

【0016】本実施例ではチップ型LEDについてのみ
説明しているが、光反射ケース1を有していれば、リー
ドフレーム上にLEDチップ3をダイボンディングする
ようなプリント基板2を使用しないリード端子付きのL
EDで有っても構わない。
Although only the chip type LED is described in the present embodiment, if the light reflection case 1 is provided, the lead terminal which does not use the printed board 2 for die-bonding the LED chip 3 on the lead frame. L with
It may be ED.

【図面の簡単な説明】[Brief description of drawings]

【図1】(a)本発明における光反射ケース及びプリン
ト基板の斜視説明図である。 (b)図1(a)の実施例を樹脂封止した後のY1−Y
2における断面図である。
FIG. 1A is a perspective explanatory view of a light reflection case and a printed circuit board according to the present invention. (B) Y1-Y after resin sealing of the embodiment of FIG.
It is sectional drawing in 2.

【図2】(a)本発明の光反射ケースの異なる形状の上
面図例である。 (b)本発明の光反射ケースの他の異なる形状の上面図
例である。
FIG. 2 (a) is an example of a top view of a different shape of the light reflection case of the present invention. (B) It is an example of a top view of another different shape of the light reflection case of the present invention.

【図3】(a)従来例を示す樹脂封止前の斜視説明図で
ある。 (b)図3(a)の従来例を樹脂封止した後のY3−Y
4における断面図の例である。 (c)図3(a)の従来例を樹脂封止した後のY3−Y
4における断面図の他の例である。
FIG. 3A is a perspective explanatory view showing a conventional example before resin sealing. (B) Y3-Y after resin sealing of the conventional example of FIG.
4 is an example of a sectional view of FIG. (C) Y3-Y after resin sealing of the conventional example of FIG.
4 is another example of the cross-sectional view of FIG.

【図4】図3(b)を吸着ノズルで吸着する時の断面説
明図である。
FIG. 4 is an explanatory cross-sectional view of FIG. 3B when adsorbing with a suction nozzle.

【符号の説明】[Explanation of symbols]

1:光反射ケース 1a:チップ孔 1b:ワイヤ孔 2:プリント基板 3:LEDチップ 4:ワイヤ 5:LED電極 6:封止(エポキシ)樹脂 1: Light reflection case 1a: Chip hole 1b: Wire hole 2: Printed board 3: LED chip 4: Wire 5: LED electrode 6: Encapsulation (epoxy) resin

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 光反射ケースを有する発光ダイオードに
おいて、前記光反射ケースは発光ダイオードチップ取り
付け用の逆切頭円錐状のチップ孔を有すると共に、前記
チップ孔の一部につながるワイヤボンディングのワイヤ
を通すためのワイヤ孔を設けた事を特徴とする発光ダイ
オード。
1. A light-emitting diode having a light-reflecting case, wherein the light-reflecting case has an inverted frustoconical chip hole for mounting a light-emitting diode chip, and a wire bonding wire connected to a part of the chip hole. A light emitting diode characterized by having a wire hole for passing therethrough.
【請求項2】 前記発光ダイオードは、チップ型発光ダ
イオードであることを特徴とする請求項1に記載の発光
ダイオード。
2. The light emitting diode according to claim 1, wherein the light emitting diode is a chip type light emitting diode.
JP6166774A 1994-07-19 1994-07-19 Light emitting diode Pending JPH0832118A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6166774A JPH0832118A (en) 1994-07-19 1994-07-19 Light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6166774A JPH0832118A (en) 1994-07-19 1994-07-19 Light emitting diode

Publications (1)

Publication Number Publication Date
JPH0832118A true JPH0832118A (en) 1996-02-02

Family

ID=15837444

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6166774A Pending JPH0832118A (en) 1994-07-19 1994-07-19 Light emitting diode

Country Status (1)

Country Link
JP (1) JPH0832118A (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001036147A (en) * 1999-07-22 2001-02-09 Nichia Chem Ind Ltd Light emitting diode
WO2001043205A1 (en) * 1999-12-09 2001-06-14 Rohm Co., Ltd. Light-emitting chip device with case and method of manufacture thereof
WO2001045180A1 (en) * 1999-12-17 2001-06-21 Rohm Co., Ltd. Light-emitting chip device with case
JP2002374005A (en) * 2001-04-10 2002-12-26 Toshiba Corp Optical semiconductor device
EP1385217A3 (en) * 2002-07-25 2005-04-20 Matsushita Electric Works, Ltd. Photoelectric device-part
JP2005244259A (en) * 2005-05-23 2005-09-08 Nichia Chem Ind Ltd Light emitting diode
JP2009506527A (en) * 2005-08-24 2009-02-12 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Electrical contact system for light emitting diodes and laser diodes with color converter
JP2010283291A (en) * 2009-06-08 2010-12-16 Panasonic Electric Works Co Ltd Light emitting device
JP2013529841A (en) * 2010-06-16 2013-07-22 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング Optoelectronic element
KR101309761B1 (en) * 2007-03-29 2013-09-17 서울반도체 주식회사 Light emitting element
KR101309766B1 (en) * 2007-03-29 2013-09-23 서울반도체 주식회사 Light emitting diode
JP2014007203A (en) * 2012-06-21 2014-01-16 Panasonic Corp Mounting substrate, manufacturing method thereof and led module
JP2014057060A (en) * 2012-09-13 2014-03-27 Lg Innotek Co Ltd Light emitting element and lighting system having the same
JP2017157683A (en) * 2016-03-02 2017-09-07 ローム株式会社 Led light-emitting device and manufacturing method thereof

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001036147A (en) * 1999-07-22 2001-02-09 Nichia Chem Ind Ltd Light emitting diode
WO2001043205A1 (en) * 1999-12-09 2001-06-14 Rohm Co., Ltd. Light-emitting chip device with case and method of manufacture thereof
WO2001045180A1 (en) * 1999-12-17 2001-06-21 Rohm Co., Ltd. Light-emitting chip device with case
JP2002374005A (en) * 2001-04-10 2002-12-26 Toshiba Corp Optical semiconductor device
EP1385217A3 (en) * 2002-07-25 2005-04-20 Matsushita Electric Works, Ltd. Photoelectric device-part
JP2005244259A (en) * 2005-05-23 2005-09-08 Nichia Chem Ind Ltd Light emitting diode
JP2009506527A (en) * 2005-08-24 2009-02-12 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Electrical contact system for light emitting diodes and laser diodes with color converter
KR101309766B1 (en) * 2007-03-29 2013-09-23 서울반도체 주식회사 Light emitting diode
KR101309761B1 (en) * 2007-03-29 2013-09-17 서울반도체 주식회사 Light emitting element
JP2010283291A (en) * 2009-06-08 2010-12-16 Panasonic Electric Works Co Ltd Light emitting device
JP2013529841A (en) * 2010-06-16 2013-07-22 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング Optoelectronic element
US8759862B2 (en) 2010-06-16 2014-06-24 Osram Opto Semiconductors Gmbh Optoelectronic component
EP2583319B1 (en) * 2010-06-16 2019-08-07 OSRAM Opto Semiconductors GmbH Optoelectronic component
JP2014007203A (en) * 2012-06-21 2014-01-16 Panasonic Corp Mounting substrate, manufacturing method thereof and led module
JP2014057060A (en) * 2012-09-13 2014-03-27 Lg Innotek Co Ltd Light emitting element and lighting system having the same
JP2017157683A (en) * 2016-03-02 2017-09-07 ローム株式会社 Led light-emitting device and manufacturing method thereof

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