JPH0831735A - Manufacture of part by photolithography of shapeless substrate - Google Patents

Abstract

PURPOSE:To utilize a shapeless substrate effectively by a method wherein a large substrate is used as it is first, coated uniformly with a resist, and cloven to the shapeless substrate having required size and used after the large substrate is heated and dried. CONSTITUTION:A large substrate 2 is employed as it is, and coated uniformly with a resist by using spinner. The resist is applied, and heated and dried by a heating furnace. The creeping and spreading of the resist are also observed in the edge section 3 of the large substrate 2, but a uniform section is made remarkably larger than the edge section of a small shapeless substrate at an area ratio with the uniform section. The large substrate 2 is cloven by the line of an axis X-X' and an axis Y-Y', thus acquiring the shapeless substrate 1. When the small shapeless substrate 1 exists near the center of the original large substrate 2, the edge section 3 is removed, and the whole peripheries are formed in a cleaving section 4, thus equalizing all resists, then effectively utilizing the shapeless substrate 1.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a manufacturing method relating to an experiment or a prototype, and is intended to improve the yield when manufacturing parts such as sensors and electrodes by photolithography on a relatively small semiconductor substrate or semi-insulating substrate. Manufacturing method.

[0002]

2. Description of the Related Art Conventionally, a lift-off method or an etching method such as vapor deposition of a metal thin film, coating or stripping of a resist on a relatively small semiconductor substrate or semi-insulating substrate (hereinafter collectively referred to as "substrate") is used. Parts such as sensors and electrodes are manufactured by the photolithography process performed by. In the case of mass production, several or hundreds of objects are arranged in a matrix on one large substrate (wafer), and at the same time, after manufacturing through processes such as resist coating and mask printing, cleavage is performed. Select one by one.

However, it is uneconomical to make one or two prototypes on a large substrate when making them for experiments or trial production. Therefore, one large substrate is divided into small ones and is formed using small irregularly shaped substrates, but this method has a problem in resist coating.

A method of applying a resist will be described with reference to FIG. A resist 8 is applied to the amorphous substrate 1 by using a spinner 5 having a rotating portion 6 in the central portion. There is a suction hole (7) at the central position of the rotating portion 6 of the spinner 5, and the suction substrate (7) sucks the amorphous substrate 1 by suction. Figure 2
As shown in (A), the amorphous substrate 1 is placed on the rotating part 6 of the spinner 5 to be adsorbed, the resist 8 is placed on the upper part of the amorphous substrate 1, and the rotating part 6 is rotated to move the resist 8 to the amorphous substrate. Apply evenly on 1.

In the next step, although not shown, the amorphous substrate 1 to which the resist 8 is uniformly applied is dried (baked) for about 30 minutes in a heating furnace at about 90 ° C., and then baked. A separately prepared mask pattern is positioned on the upper surface of the substrate 1 and exposed. The exposed resist portion is peeled off with a peeling solution, leaving the other resist portion, and is manufactured in the photolithography step which proceeds to the next step.

By the way, the following problems occur in the process of applying the resist 8. As shown in FIG. 2B, when the rotating part 6 of the spinner 5 rotates, the resist 8 spreads to the front, rear, left and right of the amorphous substrate 1 by centrifugal force and is applied uniformly, but the edge of the amorphous substrate 1 ( The resist 8 rises at the edge portion 3. This is because the resist 8 is sent from the center to the surroundings by centrifugal force, but the edge 8 has no place to go to the resist 8 and accumulates and rises on the edge 3.

As a result, in the conventional method, as shown in FIG. 3, the resist 8 is generally uniformly applied to the central portion of the upper surface of the amorphous substrate 1, but the edge portion 3 rises and the resist 8 is formed later. It often hindered the process. Photolithography in a later step, that is, exposure of the mask pattern,
In the processes such as peeling, vapor deposition and peeling of a metal thin film, the width of the wiring or the groove is often uneven, and the wire or groove is often broken, resulting in failure. Also, in order to eliminate failures, only a small portion of the substrate near the center could be used.

[0008]

DISCLOSURE OF THE INVENTION The present invention has a relatively small amount of resist swelling at the edge portion of the above-mentioned amorphous substrate when it is formed on a small amorphous substrate used during development or trial production, and the amorphous substrate is The present invention provides a method for manufacturing a component by photolithography, which effectively utilizes the above.

[0009]

In order to achieve the above object, the present invention first uses one large substrate (wafer) as it is to uniformly apply a resist, and then heats it in a heating furnace at about 90 ° C. It is dried by heating for 30 minutes and then cleaved into an amorphous substrate of a required size for use.

Therefore, since the cleaved portion has no resist swelling, and the amorphous substrate only in the central portion has no edge portion, there is no resist swelling portion, the amorphous substrate is effectively used, and the yield is improved. . Hereinafter, examples will be described in detail.

[0011]

DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is an illustration of an embodiment of the present invention. Using one large substrate (wafer) 2 shown in FIG. 1A as it is, the resist 8 is uniformly applied using the spinner 5 shown in FIG. After applying the resist 8, it is heated and dried in a heating furnace. Although swelling of the resist 8 is still seen at the edge portion 3 of the large substrate 2, the area ratio between the uniform portion and the swelling portion is much larger in the uniform portion than in the case of the small amorphous substrate 1.

This large substrate 2 is used by cleaving it into a small amorphous substrate 1 as required. For example, FIG. 1 (A)
The large substrate 2 shown in Fig. 1 is cleaved along the line of the axis XX 'and the axis YY' to obtain the amorphous substrate 1 as shown in Fig. 1B. In the periphery of the amorphous substrate 1, the resist 8 rises only on the edge portion 3 of the original substrate 2, and the other side is the cleavage portion 4, so the resist 8 is uniformly applied.

Assuming that the small irregular-shaped substrate 1 is located near the center of the original large substrate 2, the edge portion 3 is eliminated and the entire periphery becomes the cleavage portion 4, so that all the resists 8 are uniform. Has become. Therefore, there is no problem in manufacturing in the subsequent process by photolithography.

[0014]

As described above, according to the present invention, the resist 8 is uniformly applied when manufacturing parts such as sensors and electrodes on the small irregular-shaped substrate 1 by a photolithography process in a trial manufacture or the like. Therefore, the parts can be easily manufactured by photolithography, the accuracy can be improved, and the yield can be improved, so that the technical effect thereof is great.

[Brief description of drawings]

FIG. 1 is an explanatory diagram of an embodiment of the present invention, and FIG.
1 is a state diagram in which resist is applied to a large substrate 2, and FIG.
(B) is a state diagram in which a large substrate 2 is cleaved into a small amorphous substrate 1.

2 is an explanatory view of a spinner 5 for uniformly applying a resist 8 to an amorphous substrate 1 or a substrate 2, and FIG. 2 (A) shows that the amorphous substrate 1 is placed on a rotating part 6 of the spinner 5, FIG. 2B is a state diagram in which the resist 8 is placed on, and FIG. 2B is a state diagram of the resist 8 on the amorphous substrate 1 after the rotation unit 6 is rotated.

FIG. 3 is a diagram showing a state in which a resist 8 is applied to the amorphous substrate 1 by a conventional method.

[Explanation of symbols]

 1 amorphous substrate 2 substrate 3 edge part 4 cleaved part 5 spinner 6 rotating part 7 adsorption hole 8 resist

Claims (1)

[Claims] 1. A method for manufacturing a component on a small amorphous substrate (1) by a photolithography process, wherein a resist (8) is uniformly applied using a large substrate (2), and the resist (8) is uniformly applied. Large substrate (2) applied to
And then heat-drying and then cleaving it into an amorphous substrate (1) of a required size, and using the cleaved amorphous substrate (1) to manufacture parts by a photolithography process, A method for manufacturing a component by photolithography of a substrate.