JPH0831735A - Manufacture of part by photolithography of shapeless substrate - Google Patents
Manufacture of part by photolithography of shapeless substrateInfo
- Publication number
- JPH0831735A JPH0831735A JP18985594A JP18985594A JPH0831735A JP H0831735 A JPH0831735 A JP H0831735A JP 18985594 A JP18985594 A JP 18985594A JP 18985594 A JP18985594 A JP 18985594A JP H0831735 A JPH0831735 A JP H0831735A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- resist
- shapeless
- large substrate
- photolithography
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】この発明は、実験あるいは試作に
係わる製造方法で、比較的小さい半導体基板あるいは半
絶縁体基板上にセンサや電極等の部品をフォトリソグラ
フィにより製造する場合の歩留まり向上のための製造方
法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a manufacturing method relating to an experiment or a prototype, and is intended to improve the yield when manufacturing parts such as sensors and electrodes by photolithography on a relatively small semiconductor substrate or semi-insulating substrate. Manufacturing method.
【0002】[0002]
【従来の技術】従来から、比較的小さい半導体基板や半
絶縁体基板(以下、総称して「基板」という)上に金属
薄膜の蒸着、レジストの塗布や剥離等をリフト・オフ法
やエッチング法によって行うフォトリソグラフィの工程
により、センサや電極等の部品を製造している。多量生
産の場合には、1枚の大きな基板(ウエハ)上に数拾個
あるいは数百個の物を行列に配列し、同時にレジストの
塗布やマスク印刷等の工程を経て製造した後、へき開し
て1つ1つ選別する。2. Description of the Related Art Conventionally, a lift-off method or an etching method such as vapor deposition of a metal thin film, coating or stripping of a resist on a relatively small semiconductor substrate or semi-insulating substrate (hereinafter collectively referred to as "substrate") is used. Parts such as sensors and electrodes are manufactured by the photolithography process performed by. In the case of mass production, several or hundreds of objects are arranged in a matrix on one large substrate (wafer), and at the same time, after manufacturing through processes such as resist coating and mask printing, cleavage is performed. Select one by one.
【0003】しかしながら実験あるいは試作のために作
成する場合には、大きな基板に試作品を1つか2つ作成
することは不経済なことである。そこで1枚の大きい基
板を小さく分割した不定形の小さな基板を用いて作成す
るが、この方法ではレジストの塗布に問題があった。However, it is uneconomical to make one or two prototypes on a large substrate when making them for experiments or trial production. Therefore, one large substrate is divided into small ones and is formed using small irregularly shaped substrates, but this method has a problem in resist coating.
【0004】図2を用いて、レジストの塗布方法につい
て説明する。中央部に回転部6を有するスピンナ5を用
いて不定形基板1にレジスト8を塗布する。このスピン
ナ5の回転部6の中央位置には吸着穴(7)があり、真
空ポンプで吸引し、不定形基板1を吸着する。図2
(A)に示すように、不定形基板1をスピンナ5の回転
部6に置いて吸着し、レジスト8を不定形基板1の上部
に載せ、回転部6を回転させてレジスト8を不定形基板
1上に均一に塗布する。A method of applying a resist will be described with reference to FIG. A resist 8 is applied to the amorphous substrate 1 by using a spinner 5 having a rotating portion 6 in the central portion. There is a suction hole (7) at the central position of the rotating portion 6 of the spinner 5, and the suction substrate (7) sucks the amorphous substrate 1 by suction. Figure 2
As shown in (A), the amorphous substrate 1 is placed on the rotating part 6 of the spinner 5 to be adsorbed, the resist 8 is placed on the upper part of the amorphous substrate 1, and the rotating part 6 is rotated to move the resist 8 to the amorphous substrate. Apply evenly on 1.
【0005】次の工程では、レジスト8を均一に塗布し
た不定形基板1を、図示していないが、約90度Cの加
熱炉で30分程加熱乾燥(ベーキング)させ、その後ベ
ーキングした不定形基板1の上面に、別に準備したマス
クパターンを位置決めして付し、露光する。その露光さ
れたレジスト部分を剥離液で剥離し、他のレジスト部分
は残して、次の工程へと進むフォトリソグラフィの工程
で製造する。In the next step, although not shown, the amorphous substrate 1 to which the resist 8 is uniformly applied is dried (baked) for about 30 minutes in a heating furnace at about 90 ° C., and then baked. A separately prepared mask pattern is positioned on the upper surface of the substrate 1 and exposed. The exposed resist portion is peeled off with a peeling solution, leaving the other resist portion, and is manufactured in the photolithography step which proceeds to the next step.
【0006】ところで、このレジスト8の塗布過程で次
のような問題が生じる。図2(B)に示すように、スピ
ンナ5の回転部6が回転すると、レジスト8は遠心力で
不定形基板1の前後左右に広がり均一に塗布されていく
が、不定形基板1のエッジ(端部)部3でレジスト8が
盛り上がってくる。これはレジスト8が中央部から遠心
力で周囲に送られるが、エッジ部3ではレジスト8の行
き場が無くなり、エッジ部3に溜まり盛り上がるからで
ある。By the way, the following problems occur in the process of applying the resist 8. As shown in FIG. 2B, when the rotating part 6 of the spinner 5 rotates, the resist 8 spreads to the front, rear, left and right of the amorphous substrate 1 by centrifugal force and is applied uniformly, but the edge of the amorphous substrate 1 ( The resist 8 rises at the edge portion 3. This is because the resist 8 is sent from the center to the surroundings by centrifugal force, but the edge 8 has no place to go to the resist 8 and accumulates and rises on the edge 3.
【0007】その結果従来の方法では、図3に示すよう
に、不定形基板1上面の中央部は、レジスト8が全般的
には均一に塗布されているが、エッジ部3では盛り上が
り、後の工程に支障をきたすことが多かった。後の工程
のフォトリソグラフィ、つまりマスクパターンの露光、
剥離、金属薄膜の蒸着や剥離等の工程において、配線あ
るいは溝の幅にむらが出来たり、断線したりショートし
たりして失敗することが往々にして生じていた。また失
敗を無くすためには、中央部付近のわずかな基板部分し
か使用できなかった。As a result, in the conventional method, as shown in FIG. 3, the resist 8 is generally uniformly applied to the central portion of the upper surface of the amorphous substrate 1, but the edge portion 3 rises and the resist 8 is formed later. It often hindered the process. Photolithography in a later step, that is, exposure of the mask pattern,
In the processes such as peeling, vapor deposition and peeling of a metal thin film, the width of the wiring or the groove is often uneven, and the wire or groove is often broken, resulting in failure. Also, in order to eliminate failures, only a small portion of the substrate near the center could be used.
【0008】[0008]
【発明が解決しようとする課題】この発明は、開発や試
作時に用いる小さい不定形基板での作成において、前述
の不定形基板のエッジ部でのレジストの盛りの部分が比
較的少なく、不定形基板を有効に利用する、フォトリソ
グラフィによる部品製造方法を提供するものである。DISCLOSURE OF THE INVENTION The present invention has a relatively small amount of resist swelling at the edge portion of the above-mentioned amorphous substrate when it is formed on a small amorphous substrate used during development or trial production, and the amorphous substrate is The present invention provides a method for manufacturing a component by photolithography, which effectively utilizes the above.
【0009】[0009]
【課題を解決するための手段】上記目的を達成するため
に、この発明は初めに1枚の大きな基板(ウエハ)をそ
のまま用いてレジストを均一に塗布し、約90度Cの加
熱炉で約30分間加熱乾燥し、その後に必要な大きさの
不定形基板にへき開して用いるものである。In order to achieve the above object, the present invention first uses one large substrate (wafer) as it is to uniformly apply a resist, and then heats it in a heating furnace at about 90 ° C. It is dried by heating for 30 minutes and then cleaved into an amorphous substrate of a required size for use.
【0010】従って、へき開した部分はレジストの盛り
上がりが無く、しかも中央部分のみの不定形基板はエッ
ジ部が無いためレジストの盛り上がり部分は皆無とな
り、不定形基板は有効に利用され、歩留まりが向上し
た。以下、実施例について詳細に説明する。Therefore, since the cleaved portion has no resist swelling, and the amorphous substrate only in the central portion has no edge portion, there is no resist swelling portion, the amorphous substrate is effectively used, and the yield is improved. . Hereinafter, examples will be described in detail.
【0011】[0011]
【実施例】図1は本発明の一実施例の説明図である。図
1(A)に示す1枚の大きな基板(ウエハ)2をそのま
ま用い、図2のスピンナ5を用いてレジスト8を均一に
塗布する。レジスト8を塗布後に加熱炉で加熱乾燥させ
る。大きな基板2のエッジ部3ではやはりレジスト8の
盛り上がりが見られるが、均一部分と盛り上がり部分と
の面積比は、小さな不定形基板1のときと比べて均一部
分が格段に大きくなる。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is an illustration of an embodiment of the present invention. Using one large substrate (wafer) 2 shown in FIG. 1A as it is, the resist 8 is uniformly applied using the spinner 5 shown in FIG. After applying the resist 8, it is heated and dried in a heating furnace. Although swelling of the resist 8 is still seen at the edge portion 3 of the large substrate 2, the area ratio between the uniform portion and the swelling portion is much larger in the uniform portion than in the case of the small amorphous substrate 1.
【0012】この大きな基板2を必要に応じた小さな不
定形基板1にへき開して使用する。例えば、図1(A)
に示す大きな基板2を軸X−X’と軸Y−Y’の線でへ
き開し、図1(B)のような不定形基板1を得る。この
不定形基板1の周辺は元の基板2のエッジ部3にのみレ
ジスト8が盛り上がり、他の辺はへき開部4であるので
レジスト8は均一に塗布されている。This large substrate 2 is used by cleaving it into a small amorphous substrate 1 as required. For example, FIG. 1 (A)
The large substrate 2 shown in Fig. 1 is cleaved along the line of the axis XX 'and the axis YY' to obtain the amorphous substrate 1 as shown in Fig. 1B. In the periphery of the amorphous substrate 1, the resist 8 rises only on the edge portion 3 of the original substrate 2, and the other side is the cleavage portion 4, so the resist 8 is uniformly applied.
【0013】この小さな不定形基板1が、元の大きな基
板2の中央付近にあったものとすると、エッジ部3が無
くなり、全ての周辺がへき開部4となるので、全てのレ
ジスト8が均一となっている。よってその後のフォトリ
ソグラフィによる工程での製造に問題点はなくなる。Assuming that the small irregular-shaped substrate 1 is located near the center of the original large substrate 2, the edge portion 3 is eliminated and the entire periphery becomes the cleavage portion 4, so that all the resists 8 are uniform. Has become. Therefore, there is no problem in manufacturing in the subsequent process by photolithography.
【0014】[0014]
【発明の効果】以上説明したように、この発明による
と、試作等で小さな不定形基板1にフォトリソグラフィ
による工程でセンサや電極等の部品を製造するとき、レ
ジスト8が均一に塗布されているので、フォトリソグラ
フィによる部品製造が容易になり、精度もとれ、歩留ま
りも向上するので、その技術的効果は大である。As described above, according to the present invention, the resist 8 is uniformly applied when manufacturing parts such as sensors and electrodes on the small irregular-shaped substrate 1 by a photolithography process in a trial manufacture or the like. Therefore, the parts can be easily manufactured by photolithography, the accuracy can be improved, and the yield can be improved, so that the technical effect thereof is great.
【図1】本発明の一実施例の説明図であり、図1(A)
は大きな基板2にレジストを塗布した状態図で、図1
(B)は大きな基板2を小さな不定形基板1にへき開し
た状態図である。FIG. 1 is an explanatory diagram of an embodiment of the present invention, and FIG.
1 is a state diagram in which resist is applied to a large substrate 2, and FIG.
(B) is a state diagram in which a large substrate 2 is cleaved into a small amorphous substrate 1.
【図2】不定形基板1あるいは基板2にレジスト8を均
一に塗布するスピンナ5の説明図であり、図2(A)は
スピンナ5の回転部6上に不定形基板1を置き、その上
にレジスト8を載せた状態図であり、図2(B)は回転
部6を回転した後の不定形基板1上のレジスト8の状態
図である。2 is an explanatory view of a spinner 5 for uniformly applying a resist 8 to an amorphous substrate 1 or a substrate 2, and FIG. 2 (A) shows that the amorphous substrate 1 is placed on a rotating part 6 of the spinner 5, FIG. 2B is a state diagram in which the resist 8 is placed on, and FIG. 2B is a state diagram of the resist 8 on the amorphous substrate 1 after the rotation unit 6 is rotated.
【図3】従来の方法で不定形基板1にレジスト8を塗布
した状態図である。FIG. 3 is a diagram showing a state in which a resist 8 is applied to the amorphous substrate 1 by a conventional method.
1 不定形基板 2 基板 3 エッジ部 4 へき開部 5 スピンナ 6 回転部 7 吸着穴 8 レジスト 1 amorphous substrate 2 substrate 3 edge part 4 cleaved part 5 spinner 6 rotating part 7 adsorption hole 8 resist
Claims (1)
グラフィによる工程で部品を製造する方法において、 大きな基板(2)を用いてレジスト(8)を均一に塗布
し、 レジスト(8)を均一に塗布した上記大きな基板(2)
を加熱乾燥し、 その後に必要な大きさの不定形基板(1)にへき開し、 へき開した上記不定形基板(1)でもってフォトリソグ
ラフィによる工程で部品を製造する、ことを特徴とする
不定形基板のフォトリソグラフィによる部品製造方法。1. A method for manufacturing a component on a small amorphous substrate (1) by a photolithography process, wherein a resist (8) is uniformly applied using a large substrate (2), and the resist (8) is uniformly applied. Large substrate (2) applied to
And then heat-drying and then cleaving it into an amorphous substrate (1) of a required size, and using the cleaved amorphous substrate (1) to manufacture parts by a photolithography process, A method for manufacturing a component by photolithography of a substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18985594A JPH0831735A (en) | 1994-07-20 | 1994-07-20 | Manufacture of part by photolithography of shapeless substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18985594A JPH0831735A (en) | 1994-07-20 | 1994-07-20 | Manufacture of part by photolithography of shapeless substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0831735A true JPH0831735A (en) | 1996-02-02 |
Family
ID=16248315
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18985594A Withdrawn JPH0831735A (en) | 1994-07-20 | 1994-07-20 | Manufacture of part by photolithography of shapeless substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0831735A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5928526A (en) * | 1997-04-29 | 1999-07-27 | Stellex Microwave Systems, Inc. | Method for manufacturing a substrate having an irregular shape |
-
1994
- 1994-07-20 JP JP18985594A patent/JPH0831735A/en not_active Withdrawn
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5928526A (en) * | 1997-04-29 | 1999-07-27 | Stellex Microwave Systems, Inc. | Method for manufacturing a substrate having an irregular shape |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20011002 |