JPH08316636A - Semiconductor device - Google Patents

Abstract

PURPOSE: To provide a semiconductor device which can be mounted in a small mounting area on a mounting board without giving any damage to the semiconductor element. CONSTITUTION: A semiconductor carrier 3 is folded and a semiconductor element 1 is put between the two parts of the folded semiconductor carrier 3. A semiconductor electrode 2 of the semiconductor element 1 is directly junctioned to a connecting electrode 4 formed on a first major surface of the semiconductor carrier 3. An external electrode (a) 6 is formed on the surface, which is the second major surface of the semiconductor carrier 3, facing in the same direction of an electrode forming surface of the semiconductor 1. An external electrode (b) 7 is formed on the surface facing in the same direction of the rear of the electrode forming surface of the semiconductor 1. These external electrodes (a) 6 and (b) 7 are electrically connected with the connecting electrode 4 by conductive wire and via formed in the semiconductor carrier 3.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to an improved technique for a semiconductor element protecting member for protecting a semiconductor element and electrically connecting the semiconductor element and an external device.

[0002]

2. Description of the Related Art Conventionally, for example, a QFP package or a PGA package is used to electrically connect a semiconductor element to an external device (including a semiconductor element and electronic parts such as a capacitor, a resistor, an inductor other than the semiconductor element). It has been performed that the semiconductor device is mounted in such a package and mounted on a mounting substrate, or the semiconductor element is directly mounted on the mounting substrate like a flip chip method.

[0003]

However, when the semiconductor element is housed and mounted in the package, the package is provided with a connecting portion for electrically and mechanically connecting the semiconductor element and the package, and the package and the external device. Since it has connection terminals (leads) for making connections, its overall size is larger than that of semiconductor elements, and as a result,
There is a problem that the mounting area (that is, the area required for the package on the mounting board) becomes extremely large. In addition, the package is expensive and the cost is high. On the other hand, in the method of directly mounting the semiconductor element on the substrate such as the flip chip method, it is possible to mount the semiconductor element on the substrate with a mounting area almost equal to the area of the semiconductor element. There is a problem that the element may be damaged. Furthermore, in both methods, when the number of external devices to be electrically connected to the semiconductor element increases, the mounting components (semiconductor element, external device) on the mounting board can be mounted only in a planar manner, so that the number of mounting components is reduced. There is a problem that the occupied area of the device (mixed circuit device) obtained accordingly increases.

The present invention has been made to solve the above problems, and it is an object of the present invention to provide a semiconductor device which can be mounted on a mounting board without damaging a semiconductor element and with a small mounting area. To aim.

[0005]

In a semiconductor device according to the present invention, a semiconductor element and a first main surface of a bendable insulating substrate material are formed with a first electrode, and a second main surface is formed with the first electrode. A semiconductor element protection member formed by forming a second electrode electrically connected to the first electrode, and forming the electrode of the semiconductor element on the first main surface of the insulating substrate material. The first electrode is directly connected to the electrode of the semiconductor element by bending so as to form a first area facing the surface and a second area facing the back surface of the electrode formation surface of the semiconductor element. The second electrode is used as an electrode for electrical connection with the outside.

In the above structure, the second electrode is
It is preferable that the second main surface is provided in two or more regions having different arrangement relations with respect to the electrode formation surface of the semiconductor element.

In the above structure, the second electrode is
It is provided in each of a first region of the second main surface that faces the same direction as the electrode formation surface of the semiconductor element and a second region that faces the same direction as the back side surface of the electrode formation surface of the semiconductor device. Is preferred.

In the above structure, it is preferable that the foldable insulating substrate material is a flexible resin substrate. A polyimide resin substrate, for example, is used as the flexible resin substrate.

In the above structure, the foldable insulating substrate material is a substrate made of a resin-impregnated organic nonwoven fabric material, and the semiconductor element protecting member is made of a substrate made of the resin-impregnated organic nonwoven fabric material. It is preferably a double-sided or multilayer printed wiring board. As the substrate made of the resin-impregnated organic nonwoven fabric material, for example, a sheet substrate made of aramid fiber impregnated with epoxy resin or polyimide resin, a sheet substrate made of paper impregnated with phenol resin, or the like can be used.

In the above structure, it is preferable that the space between the semiconductor element and the semiconductor element protection member and the space around the semiconductor element are filled with an insulator. As the insulator, for example, thermosetting resin such as epoxy resin, polybutadiene resin, phenol resin, and polyimide resin can be used.

In the above structure, it is preferable that a filler having high thermal conductivity is added to the insulator. As the filler having high thermal conductivity, fine particles of a metal such as aluminum, a metal oxide such as alumina or aluminum nitride, or a nitride can be used.

In the above structure, it is preferable that a heat radiation member is sandwiched between the semiconductor element and the semiconductor element protection member. As the heat dissipation member, for example, a plate-shaped or fin-shaped member made of a metal oxide or nitride having a high thermal conductivity such as alumina or aluminum nitride can be used.

In the above structure, it is preferable that another electronic component different from the semiconductor element is mounted on the second main surface of the semiconductor element protecting member. Further, in the semiconductor device according to the present invention, a plurality of the semiconductor devices are stacked and the upper and lower semiconductor devices are electrically connected to each other by the second electrodes.

[0014]

According to the above-mentioned structure of the semiconductor device of the present invention, the semiconductor element and the first main surface of the foldable insulating substrate material are provided with the first electrode, and the second main surface is provided with the first electrode. A semiconductor element protection member formed by forming a second electrode electrically connected to the first electrode, and forming the electrode of the semiconductor element on the first main surface of the insulating substrate material. The first electrode is directly connected to the electrode of the semiconductor element by bending so as to form a first area facing the surface and a second area facing the back surface of the electrode formation surface of the semiconductor element. Since the second electrode is used as an electrode for electrical connection with an external device, the mounting work can be performed without damaging the semiconductor element, and the mounting area on the mounting board is smaller than that of the semiconductor element. Only slightly larger than the area, high density Implementation is possible.

As a preferred example of the above structure, the second electrode is provided in two or more regions having different positional relations with respect to the electrode formation surface of the semiconductor element on the second main surface. Since a plurality of semiconductor devices can be connected and mounted on a mounting board, the device is highly practical in terms of high density.

As a preferred example of the above structure, the second electrode has a first region in the second main surface which faces the same direction as the electrode forming surface of the semiconductor element, and an electrode forming surface of the semiconductor element. Since the semiconductor device is provided in each of the back surface and the second region that faces the same direction, a plurality of semiconductor devices are used to mount the semiconductor device on the mounting substrate in a direction perpendicular to the substrate surface.
Alternatively, they can be stacked and mounted in the horizontal direction, and the mounting area of the entire device can be made extremely small.

As a preferred example of the above structure, when the foldable insulating plate member is a flexible resin substrate,
It is easy to fold and improves the workability of mounting work, and it is practical in terms of cost.

As a preferred example of the above construction, the foldable insulating plate material is a substrate made of a resin-impregnated organic nonwoven fabric material, and the semiconductor element protecting member is made of a substrate made of the resin-impregnated organic nonwoven fabric material. The multi-layer printed wiring board has many wiring layers and power supply layers formed in the semiconductor element protection member, is excellent in heat dissipation and is practical in terms of high density.

As a preferred example of the above structure, when a space between the semiconductor element and the semiconductor element protecting member and a space around the semiconductor element are filled with an insulator, mechanical strength is excellent. Will be things.

As a preferred example of the above constitution, when a filler having high thermal conductivity is added to the insulator,
It has excellent heat dissipation in addition to mechanical strength. As a preferred example of the configuration, when a heat dissipation member is sandwiched between the semiconductor element and the semiconductor element protection member,
It has excellent heat dissipation. As a preferred example of the above configuration, when another electronic component different from the semiconductor element is mounted on the second main surface of the semiconductor element protection member, it can be effectively used as a hybrid circuit device.

Further, according to the above-mentioned structure of the semiconductor device of the present invention, a plurality of the semiconductor devices are stacked, and the semiconductor devices located above and below are electrically connected to each other by the second electrodes. Due to this, it is possible to obtain a semiconductor device in which a plurality of semiconductor elements are mounted on a mounting substrate in a mounting area equal to the mounting area of one semiconductor element.

[0022]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. (Embodiment 1) FIG. 1 is a sectional view showing the structure of a semiconductor device according to Embodiment 1 of the present invention.
The semiconductor electrode 2 is formed on the first main surface of the
Are directly connected (joined) to the connection electrode 4 formed on the first main surface of the semiconductor carrier 3 by the conductive adhesive 5. An external electrode (a) is provided on the second main surface of the semiconductor carrier 3.
6, external electrodes (b) 7 are formed, and these are electrically connected to the connection electrodes 4. The space between the semiconductor element 1 and the semiconductor carrier 3 and the space around the semiconductor element 1 are filled with an insulator 8 made of, for example, an epoxy resin. Here, the semiconductor carrier 3 is formed by bending a flexible resin substrate made of, for example, a polyimide resin as a main body to form the connection electrode 4, the external electrode (a) 6, and the external electrode (b) 7. 4 is electrically connected to the external electrode (a) 6 and the external electrode (b) 7 by wiring (not shown) formed on the surface or inside of the semiconductor carrier (flexible resin substrate) 3 and via (FIG. Not shown). The external electrode (a) 6 and the external electrode (b) 7 are arranged at the same projection position on the second main surface (outer surface) of the semiconductor carrier 3 with the semiconductor element 1 interposed therebetween.

In such a semiconductor device of this embodiment, since the electrode 2 of the semiconductor element 1 is directly connected to the connection electrode 4 of the semiconductor carrier 3, the semiconductor carrier 3 can have a smaller area than that of the conventional package. As a result, the mounting area on the mounting board is slightly larger than the area of the semiconductor element, and high-density mounting becomes possible. Moreover, unlike the flip-chip method, the semiconductor element can be mounted on the mounting substrate without directly handling it, so that the semiconductor element is not damaged. Further, the semiconductor carrier (flexible resin substrate) 3 is cheaper than the package, and the device cost can be reduced. Further, for example, in the case of a semiconductor element such as a memory element that needs to electrically connect a plurality of memory elements through a common terminal, a plurality of semiconductor devices are stacked on a mounting board (circuit board),
The external electrodes (a) 6 and the external electrodes of the semiconductor device located above and below
(b) By connecting 7 directly, a plurality of semiconductor elements can be electrically connected without using wiring, and a plurality of semiconductor elements can be mounted in the mounting area of one semiconductor element.

(Embodiment 2) FIG. 2 is a sectional view showing the structure of a semiconductor device according to Embodiment 2 of the present invention.
The same reference numerals as those in FIG. 1 indicate the same or corresponding portions. In the device of Example 1, the external electrode (b) 7 is the semiconductor element 1 on the second main surface (outer surface) of the semiconductor carrier 3.
A surface facing the same direction as the back surface of the electrode formation surface of, that is,
Although provided on the upper surface of the device, in the device of this embodiment, the external electrode (b) 7 is a surface facing the same direction as the side surface of the semiconductor element 1 on the second main surface (outer surface) of the semiconductor carrier 3. That is, it is provided on the side surface of the device.

In such a semiconductor device of this embodiment, since a plurality of devices mounted on the mounting substrate (circuit board) can be connected by connecting the external electrodes (b) 7 on the side surfaces of each device, Wiring layers for electrical connection between devices on the mounting board (circuit board) can be reduced, and high-density mounting can be performed.

(Embodiment 3) FIG. 3 is a sectional view showing the structure of a semiconductor device according to Embodiment 2 of the present invention.
The same reference numerals as those in FIG. 1 indicate the same or corresponding portions. The semiconductor device according to the present embodiment has a configuration obtained by combining the configurations of the devices according to the first and second embodiments, and a plurality of semiconductor devices can be connected in the vertical direction and the horizontal direction on the mounting substrate. , 2 can be mounted at a higher density than that of the device.

(Embodiment 4) FIG. 4 is a sectional view showing the structure of a semiconductor device according to Embodiment 4 of the present invention.
The same reference numerals as those in FIG. 1 indicate the same or corresponding portions. The semiconductor devices of Examples 1 to 3 are configured by bending the semiconductor carrier 3 into a structure that sandwiches the semiconductor element 1 with one side surface of the semiconductor element 1 interposed therebetween. The carrier 3 is bent into a structure sandwiching the semiconductor element 1 via the two side surfaces of the semiconductor element 1, and the semiconductor element 1 on the second main surface (outer surface) of the semiconductor carrier 3 is the same as the device of the first embodiment. The external electrode (b) 7 is provided on the surface facing the same direction as the back side of the electrode forming surface, that is, the upper surface of the device.

In the device of this embodiment as described above, the same effect as that of the device of the first embodiment can be obtained, and the connection electrode 4, the external electrode (a) 6 and the external electrode (b) 7 are connected by wiring or wiring. The work for electrically connecting vias is facilitated.

(Embodiment 5) FIG. 5 is a sectional view showing the structure of a semiconductor device according to Embodiment 5 of the present invention.
The same reference numerals as those in FIG. 1 indicate the same or corresponding portions. In the semiconductor device of the present embodiment, the semiconductor carrier 3 is bent into a structure in which the semiconductor element 1 is sandwiched via the two side surfaces of the semiconductor element 1 in the same manner as the device of the fourth embodiment. Semiconductor element 1 on the surface (outer surface)
The external electrodes (b) 7 are provided on the respective surfaces facing the same direction as the two side surfaces of the device, that is, on the two side surfaces of the device.

In such a semiconductor device of this embodiment, since the external electrodes (b) 7 are provided on the two side surfaces of the device, the external electrodes (b) 7 are provided on the mounting substrate as compared with the device of the second embodiment. By directly connecting the external electrodes (b) 7 to each other, the number of devices that can be connected and mounted can be increased.

(Embodiment 6) FIG. 6 is a sectional view showing the structure of a semiconductor device according to Embodiment 6 of the present invention.
The same reference numerals as those in FIG. 1 indicate the same or corresponding portions. The semiconductor device of the present embodiment has a configuration obtained by combining the configurations of the devices of the fourth and fifth embodiments, and since a plurality of semiconductor devices can be connected vertically and laterally on the mounting substrate, the semiconductor device of the fourth embodiment is described. , 5 can be mounted at a higher density than that of the devices of FIGS.

In the first to sixth embodiments, the semiconductor carrier is bent so as to sandwich the semiconductor element via one or two side surfaces of the semiconductor element, and one or two side surfaces of the semiconductor element are formed on the outer side surfaces thereof. The external electrodes are provided on one or two surfaces respectively facing the same direction. In the present invention, the semiconductor carrier is bent so as to sandwich the semiconductor element via three or more side surfaces of the semiconductor element, and the semiconductor element on the outer surface thereof is bent. It is also possible to provide external electrodes on three or more surfaces that face the same direction as the three or more side surfaces, respectively. In this case, work for electrically connecting the connection electrode and the external electrode by wiring or vias. Will be even easier.

Further, in the first to sixth embodiments, the flexible resin substrate is used as the main body substrate of the semiconductor carrier. However, in the present invention, other insulating materials that can be folded and sandwich the semiconductor element as the main body substrate of the semiconductor carrier are used. It is also possible to use a flexible substrate, for example, a sheet substrate made of aramid fiber impregnated with epoxy resin or polyimide resin, a sheet substrate made of paper impregnated with phenol resin, or the like. When a multilayer wiring board is formed using a sheet substrate made of an organic non-woven fabric impregnated with these resins, the substrate can have a plurality of wiring layers, and therefore electrodes that can be connected (connection electrodes, external electrodes)
Can be increased, and since the substrate can be provided with a plurality of power supply layers, the resistance to electrical noise is improved and the heat dissipation is improved.

In the first to sixth embodiments, the semiconductor electrode and the connection electrode are directly joined by using a conductive adhesive, but in the present invention, the semiconductor electrode and the connection electrode are soldered or another conductive joining material. It is also possible to directly bond by using.

In the first to sixth embodiments, the semiconductor electrode and the connection electrode are directly joined, but in the present invention, the semiconductor electrode and the connection electrode are wire-bonded or TAB (tape automate).
It is also possible to connect by d bonding). However, in this case, the device is slightly larger than the structure in which the semiconductor electrode and the connection electrode are directly joined.

Further, in the first to sixth embodiments, the space between the semiconductor element and the semiconductor carrier and the space around the semiconductor element are filled with epoxy resin as an insulator to enhance the strength of the device. However, in the present invention, it is not always necessary to fill such an insulating material. When the insulating material is filled with metal particles such as aluminum or metal oxides or nitride particles having high thermal conductivity such as alumina or aluminum nitride, which are added to the insulating material, the strength of the device can be increased. , Heat dissipation is improved.

Further, according to the present invention, a plate-shaped or fin-shaped member made of a metal oxide or a nitride having a high thermal conductivity such as alumina or aluminum nitride is sandwiched between the semiconductor element and the semiconductor carrier, and heat is applied. The radiation property can be further improved.

Further, in the first to sixth embodiments, only one semiconductor element is sandwiched by the semiconductor carrier, but in the present invention, it is also possible to sandwich two or more semiconductor elements or semiconductor elements and other electronic parts. Yes, a multi-chip module or the like can be configured.

Further, according to the present invention, a semiconductor element or another electronic component different from the semiconductor element is provided on the outer surface of the semiconductor carrier,
For example, a capacitor, a resistor, an inductor, etc. can be provided, and in this case, a small hybrid circuit device can be effectively used.

[0040]

According to the semiconductor device of the present invention, the first electrode is formed on the semiconductor element and the first main surface of the bendable insulating substrate material, and the first electrode is formed on the second main surface. A member for protecting a semiconductor element, in which a second electrode electrically connected to the electrode is formed, and the insulating substrate material is provided on the first main surface thereof on the electrode forming surface of the semiconductor element. Bending so as to form a first region facing each other and a second region facing the back surface of the electrode formation surface of the semiconductor element, and directly connecting the first electrode to the electrode of the semiconductor element, By using the second electrode as an electrode for electrically connecting to an external device, the mounting work can be performed without damaging the semiconductor element, and the mounting area on the mounting substrate is smaller than the area of the semiconductor element. Only slightly larger size, high density mounting It becomes ability.

Further, according to the semiconductor device of the present invention, a plurality of the semiconductor devices are stacked, and the semiconductor devices located above and below are electrically connected to each other by the second electrodes. It is possible to obtain a semiconductor device in which a plurality of semiconductor elements are mounted on a mounting substrate in a mounting area equal to the mounting area of one semiconductor element.

[Brief description of drawings]

FIG. 1 is a sectional view showing a configuration of a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a sectional view showing the structure of a semiconductor device according to a second embodiment of the present invention.

FIG. 3 is a sectional view showing the configuration of a semiconductor device according to a third embodiment of the present invention.

FIG. 4 is a sectional view showing a configuration of a semiconductor device according to a fourth embodiment of the present invention.

FIG. 5 is a sectional view showing a configuration of a semiconductor device according to a fifth embodiment of the present invention.

FIG. 6 is a sectional view showing the structure of a semiconductor device according to a sixth embodiment of the present invention.

[Explanation of symbols]

 1 Semiconductor Element 2 Semiconductor Electrode 3 Semiconductor Carrier 4 Connection Electrode 5 Conductive Adhesive 6 External Electrode a 7 External Electrode b 8 Insulator

Claims (10)

[Claims] 1. A semiconductor element, a first electrode formed on a first main surface of a bendable insulating substrate material, and a first electrode electrically connected to the first electrode on a second main surface. A semiconductor element protection member having two electrodes formed thereon, the insulating substrate material having a first region facing the electrode forming surface of the semiconductor element on the first main surface thereof; The device is bent to form a second region facing the back surface of the electrode formation surface of the device, the first electrode is directly connected to the electrode of the semiconductor device, and the second electrode is electrically connected to the outside. Device used as an electrode for electrical connection. 2. The second electrode is provided in two or more regions of the second main surface, which have different positional relationships with respect to the electrode formation surface of the semiconductor element. Semiconductor device. 3. A first electrode in which the second electrode faces the same direction as an electrode formation surface of the semiconductor element in the second main surface.
2. The semiconductor device according to claim 1, wherein the semiconductor device is provided in each of the region and the second region facing the same direction as the back surface of the electrode formation surface of the semiconductor element. 4. The semiconductor device according to claim 1, wherein the bendable insulating substrate material is a flexible resin substrate. 5. A double-sided or multi-layer structure in which the foldable insulating substrate material is a substrate made of a resin-impregnated organic nonwoven fabric material, and the semiconductor element protecting member is made of a substrate made of the resin-impregnated organic nonwoven fabric material. The semiconductor device according to claim 1, which is a printed wiring board. 6. The semiconductor device according to claim 1, wherein a space between the semiconductor element and the semiconductor element protection member and a space around the semiconductor element are filled with an insulating material. 7. The semiconductor device according to claim 6, wherein a filler having a high thermal conductivity is added to the insulator. 8. The semiconductor device according to claim 1, wherein a heat dissipation member is sandwiched between the semiconductor element and the semiconductor element protection member. 9. The semiconductor device according to claim 1, wherein another electronic component different from the semiconductor element is mounted on the second main surface of the semiconductor element protection member. 10. A semiconductor device in which a plurality of the semiconductor devices according to claim 3 are stacked, and the semiconductor devices located above and below are electrically connected to each other by the second electrodes.