JPH08316265A - Wire bonder - Google Patents

Wire bonder

Info

Publication number
JPH08316265A
JPH08316265A JP7121220A JP12122095A JPH08316265A JP H08316265 A JPH08316265 A JP H08316265A JP 7121220 A JP7121220 A JP 7121220A JP 12122095 A JP12122095 A JP 12122095A JP H08316265 A JPH08316265 A JP H08316265A
Authority
JP
Japan
Prior art keywords
wire
ultraviolet
ultraviolet rays
lead
metal thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7121220A
Other languages
Japanese (ja)
Other versions
JP3473000B2 (en
Inventor
Nobuyuki Monjiyushirou
信之 文殊四郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Original Assignee
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Semiconductor Manufacturing Co Ltd, Kansai Nippon Electric Co Ltd filed Critical Renesas Semiconductor Manufacturing Co Ltd
Priority to JP12122095A priority Critical patent/JP3473000B2/en
Publication of JPH08316265A publication Critical patent/JPH08316265A/en
Application granted granted Critical
Publication of JP3473000B2 publication Critical patent/JP3473000B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7865—Means for transporting the components to be connected
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85053—Bonding environment
    • H01L2224/85054—Composition of the atmosphere
    • H01L2224/85065—Composition of the atmosphere being reducing
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85053—Bonding environment
    • H01L2224/85054—Composition of the atmosphere
    • H01L2224/85075—Composition of the atmosphere being inert
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/1016—Shape being a cuboid
    • H01L2924/10162—Shape being a cuboid with a square active surface
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

PURPOSE: To obtain a wire bonder by which an organic substance stuck to a region to which a metal thin wire is connected is decomposed and removed and by which a good connection can be executed without confining a contamination into a bonding region by a method wherein an ultraviolet irradiation apparatus which radiates ultraviolet rays is added to the region to which the metal thin wire is connected. CONSTITUTION: An electrode on a semiconductor pellet 6 and the free end part of a lead which is arranged so as to be adjacent to the semiconductor pellet 6 are compression-bonded sequentially by a metal thin wire by means of a bonding tool 12 so as to be connected electrically. In such a wire bonder, an ultraviolet irradiation apparatus 13 is added to a part to which the metal thin wire is connected. For example, an ultraviolet irradiation apparatus 13 is constituted of an ultraviolet light source 14, of a reflecting mirror 15 which reflects ultraviolet rays to one direction so as to be condensed, of a light guide 16 which guides light advancing to one direction and of a housing 17 which covers the ultraviolet rays so as not to be leaked to parts other than a desired part. A mercury lamp which generates ultraviolet rays in a wavelength region of 320 to 400nm is used for the ultraviolet light source 13.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は半導体装置の製造に用い
られるワイヤボンダに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonder used for manufacturing a semiconductor device.

【０００２】[0002]

【従来の技術】リードフレームを用いた半導体装置の一
例を図３から説明する。図において、１は薄い金属帯板
をプレスまたはエッチングにより成形したリードフレー
ムで、図示例では平行配置された３本一組のリード２の
中間部と外端部とをそれぞれ平行配置されたタイバ３及
び連結条４にて連結一体化したもので、図示省略するが
このリード２は多数組連接されている。５は中央のリー
ド２ａの内端に接続された放熱板で、他のリード２ｂ、
２ｃは放熱板５の近傍に配置されている。2. Description of the Related Art An example of a semiconductor device using a lead frame will be described with reference to FIG. In the figure, reference numeral 1 denotes a lead frame formed by pressing or etching a thin metal strip, and in the illustrated example, a tie bar 3 in which an intermediate portion and an outer end portion of a set of three leads 2 arranged in parallel are arranged in parallel. Also, although not shown in the drawing, a large number of sets of the leads 2 are connected to each other by being connected and integrated by the connecting strip 4. Reference numeral 5 is a heat dissipation plate connected to the inner end of the center lead 2a.
2c is arranged near the heat sink 5.

【０００３】６は放熱板５にマウントされた半導体ペレ
ットで、図示省略するが表面に多数の電極が形成されて
いる。７は半導体ペレット６上の電極とリード２ｂ、２
ｃとを電気的に接続した金属細線で、半導体ペレット６
上の電極とリード２に対して接続性の良好な金属が選択
され、一般的に金、銅、アルミニウムなどが用いられて
いる。８は半導体ペレット６を含むリードフレーム１上
の主要部分を被覆した樹脂を示す。Reference numeral 6 is a semiconductor pellet mounted on the heat dissipation plate 5, and a large number of electrodes are formed on the surface, though not shown. 7 is an electrode on the semiconductor pellet 6 and leads 2b, 2
The semiconductor pellet 6 is a thin metal wire electrically connected to c.
A metal having good connectivity with the upper electrode and the lead 2 is selected, and gold, copper, aluminum or the like is generally used. Reference numeral 8 denotes a resin which covers the main part on the lead frame 1 including the semiconductor pellet 6.

【０００４】このリードフレーム１は長尺の帯板を成形
して必要に応じてめっき処理され、その過程で酸洗脱
脂、水洗処理が行われ、所定長さに切断されて多数枚一
組に積層されて、半導体ペレット６をマウントするマウ
ント工程に供給され、続いて、半導体ペレット６上の電
極とリード２とを金属細線７にて接続するワイヤボンデ
ィング工程に供給され、さらにリードフレーム１上の主
要部分を樹脂被覆する樹脂モールド工程に送られる。樹
脂被覆後、樹脂８から露呈したリード２の連結部即ちタ
イバ３や連結条４などの不要部分が切断除去され個々の
半導体装置に分離される。この半導体装置の半導体ペレ
ット６上の電極とリード２の電気的な接続はボンディン
グツールを用いてなされる。This lead frame 1 is formed into a long strip and is plated if necessary. In the process, pickling and degreasing and rinsing are performed, and the lead frame 1 is cut into a predetermined length to be set into a large number. It is stacked and supplied to the mounting step of mounting the semiconductor pellets 6, and then to the wire bonding step of connecting the electrodes on the semiconductor pellets 6 and the leads 2 with the thin metal wires 7, and further to the lead frame 1. It is sent to a resin molding process for coating the main part with resin. After the resin coating, the connecting portion of the lead 2 exposed from the resin 8, that is, an unnecessary portion such as the tie bar 3 and the connecting strip 4 is cut and removed to be separated into individual semiconductor devices. The electrodes on the semiconductor pellets 6 of the semiconductor device and the leads 2 are electrically connected by using a bonding tool.

【０００５】図４はワイヤボンダの一例を示す。図にお
いて、図３と同一符号は同一物を示し重複する説明は省
略する。図中９は半導体ペレット６がマウントされたリ
ードフレーム１をガイドしピッチ送りするガイドレー
ル、１０はガイドレール９上の所定位置で放熱板５を固
定するクランパ、１１はガイドレール９の側方からガイ
ドレール９上に延び、先端部が上下動並びに水平動する
ホーンで、このホーン１１は超音波振動子（図示せず）
が固定され先端部に超音波振動を伝達する。１２はホー
ン１１の先端部に固定されたボンディングツールで、ス
プール（図示せず）から導出された金属細線７をガイド
し、その下端で金属細線７の先端を半導体ペレット６上
の電極に、その中間部をリード２にそれぞれ押圧して電
気的に接続する。FIG. 4 shows an example of a wire bonder. In the figure, the same symbols as those in FIG. 3 indicate the same things, and duplicate explanations are omitted. In the figure, 9 is a guide rail for guiding and pitch-feeding the lead frame 1 on which the semiconductor pellets 6 are mounted, 10 is a clamper for fixing the heat dissipation plate 5 at a predetermined position on the guide rail 9, and 11 is a side of the guide rail 9. A horn which extends on the guide rail 9 and whose tip moves vertically and horizontally. This horn 11 is an ultrasonic transducer (not shown).
Is fixed and transmits ultrasonic vibration to the tip. Reference numeral 12 denotes a bonding tool fixed to the tip of the horn 11, which guides the thin metal wire 7 led out from a spool (not shown), and the tip of the thin metal wire 7 is guided to the electrode on the semiconductor pellet 6 at its lower end. The intermediate portions are pressed against the leads 2 to be electrically connected.

【０００６】このボンディングツール１２は、図示例で
はその下端位置の異なる２つの脚片１２ａ、１２ｂを下
方に突出させ、短い脚片１２ａにはその外壁から他の脚
片１２ｂの下端に向かう貫通孔１２ｃを穿設し、他の脚
片１２ｂの下端には貫通孔１２ｃから延長したガイド溝
１２ｄが形成されている。金属細線７はボンディングツ
ール１２の貫通孔１２ｃを通りその先端部がガイド溝１
２ｄに収容され、半導体ペレット６の電極に金属細線７
の先端部を超音波振動を付与しつつ圧着接続し、金属細
線７を繰り出しつつボンディングツール１２をリード２
上に移動させ超音波振動を付与しつつ金属細線７の中間
部をリード２に圧着し、金属細線７の接続部より外方を
切断して一つのボンディング作業を完了する。In this bonding tool 12, two leg pieces 12a and 12b having different lower end positions are projected downward in the illustrated example, and a short leg piece 12a has a through hole extending from its outer wall to the lower end of another leg piece 12b. 12c is bored, and a guide groove 12d extending from the through hole 12c is formed at the lower end of the other leg piece 12b. The thin metal wire 7 passes through the through hole 12c of the bonding tool 12 and its tip is guided by the guide groove 1.
2d, the thin metal wire 7 is attached to the electrode of the semiconductor pellet 6.
The tip portion of the bonding tool 12 is crimped and connected while applying ultrasonic vibration, and the bonding tool 12 is lead 2 while feeding the thin metal wire 7.
While moving upward and applying ultrasonic vibration, the middle part of the metal thin wire 7 is pressure-bonded to the lead 2, and the outside of the connection part of the metal thin wire 7 is cut to complete one bonding operation.

【０００７】ボンディングツール１２により接続予定部
に押圧され加圧された金属細線７は超音波振動により接
触界面が摩擦し合い接触領域を共晶状態にして両者を接
続する。この作業を他の電極とリード２に対しても行
い、一つの半導体ペレット６に対するボンディング作業
を完了する。The metal thin wire 7 pressed and pressed by the bonding tool 12 at the planned connection portion is rubbed at the contact interface by ultrasonic vibration, and the contact area is eutectic to connect them. This operation is also performed on the other electrodes and the leads 2 to complete the bonding operation for one semiconductor pellet 6.

【０００８】[0008]

【発明が解決しようとする課題】ところで、半導体装置
は起動、停止の繰返しにより温度上昇、降下を繰り返す
が、この温度の変化により半導体ペレット６や金属細線
７を被覆した樹脂８も熱膨張、収縮を繰り返し、金属細
線７の両端部は樹脂８から膨張、収縮応力を受ける。こ
のとき、金属細線７の接合強度の弱い部分が剥離して接
合面積が減少すると残った接合部分に応力が集中し、接
合界面に亀裂を生じると、動作電流による発熱も加わり
きわめて短時間で断線し、信頼性の面から問題となる。By the way, the semiconductor device repeatedly rises and falls in temperature due to repeated start-up and shut-down, but due to this change in temperature, the semiconductor pellet 6 and the resin 8 coating the fine metal wires 7 also thermally expand and contract. By repeating the above, both ends of the thin metal wire 7 receive expansion and contraction stress from the resin 8. At this time, when the portion of the thin metal wire 7 with weak bonding strength is peeled off and the bonding area is reduced, stress concentrates on the remaining bonding portion, and if cracks occur at the bonding interface, heat is generated by the operating current and the wire breaks in an extremely short time. However, there is a problem in terms of reliability.

【０００９】金属細線としてアルミニウムを用いたもの
では線径の細い（１１０μｍ）場合と、線径の太い（４
００μｍ）場合とを比較すると線径の細い方が不良の発
生する割合が高かった。これは、線径が太いと接続面積
も増大するため、部分的な剥離が生じても致命的な不良
にまで至らないためと考えられる。そのため、パワーサ
イクル試験により所定の電流でのオン、オフ動作が所定
回数の繰り返しに耐えられるか検査して信頼性の確認を
しているが、この検査で不良となったものを調べてみる
と、金属細線７の断線の状態から、金属細線７とリード
２の接続部分が有機物（脂肪分など）で汚染していたも
のと推定されるものが全数量に対して０．００１％〜
０．０１％の割合で含まれていた。In the case where aluminum is used as the thin metal wire, the wire diameter is thin (110 μm) and the wire diameter is thick (4
(00 μm), the smaller the wire diameter, the higher the rate of occurrence of defects. It is considered that this is because if the wire diameter is large, the connection area also increases, and even if partial peeling occurs, a fatal defect does not occur. Therefore, the power cycle test inspects whether the on / off operation at a predetermined current can withstand a predetermined number of repetitions to confirm the reliability, but when checking the one that became defective in this inspection, From the broken state of the thin metal wire 7, it is estimated that the connecting portion between the thin metal wire 7 and the lead 2 was contaminated with organic matter (such as fat) from 0.001% to the total quantity.
It was contained at a rate of 0.01%.

【００１０】この原因として、リードフレーム１の取扱
いには通常手袋を着用しているが、放熱板５とリード２
の間に段差があるリードフレームでは積層されたリード
フレーム１の分離が困難で素手でリードフレームを持っ
たり、見かけ上は清潔に見えても有機物が付着し汚染し
た手袋を使用したことなどが考えられる。また、金属細
線７も製造の際に潤滑油が使用されており、スプールに
巻きとられるまでに十分洗浄されているが、検知限界以
下で潤滑油が残留していることも考えられる。このよう
に表面が汚染された金属細線７とリード２とをボンディ
ングツール１２にて接続する際に、超音波接合段階では
接合面が高温となり、大部分の汚染物は分解気化して除
去されるが、この前に金属細線７はボンディングツール
１２により圧潰され汚染物質が接合領域内の閉じ込めら
れるため、極微量の汚染物質でも接続に重大な障害とな
るものと考えられる。The reason for this is that although the gloves are usually worn to handle the lead frame 1, the heat sink 5 and the leads 2 are
It is difficult to separate the stacked lead frame 1 with a lead frame with a step between them, and it is possible that you used bare hands to hold the lead frame, or you used gloves that were contaminated with organic substances even if they looked clean. To be In addition, the thin metal wire 7 also uses a lubricating oil at the time of manufacturing and is sufficiently washed before being wound on the spool, but it is conceivable that the lubricating oil remains below the detection limit. When connecting the metal wires 7 whose surfaces are contaminated in this way and the leads 2 with the bonding tool 12, the joint surface becomes hot at the ultrasonic bonding stage, and most of the contaminants are decomposed and vaporized and removed. However, before this, the thin metal wires 7 are crushed by the bonding tool 12 and the contaminants are confined in the bonding region, so it is considered that even a trace amount of contaminants will seriously hinder the connection.

【００１１】しかしながら、このように推定される原因
による不良の発生度合がきわめて低いこともあってこれ
らの原因を全て解消することは困難であった。このよう
な問題を解決するものとして、金属細線７をリード２に
接続した後、リード２上の接続部に紫外線硬化性樹脂を
塗布し、この紫外線硬化性樹脂に紫外線を照射して硬化
させ、さらに樹脂８にて被覆するようにした半導体装置
が知られている。（特開平０３−２２９４３３号公報参
照） これによれば、金属細線７が紫外線硬化性樹脂にてリー
ド２に固定されているため外皮樹脂８の熱膨張、収縮の
影響を受けにくく電気的接続を確実にするという問題は
解決できるが、紫外線硬化性樹脂の供給と紫外線照射に
よる硬化の作業が必要で、これらの作業はワイヤボンデ
ィング作業が終了した後に行う必要があり作業空間と作
業時間が余分に必要であるという問題があった。However, it is difficult to eliminate all of these causes because the degree of occurrence of defects due to such presumed causes is extremely low. In order to solve such a problem, after connecting the thin metal wire 7 to the lead 2, an ultraviolet curable resin is applied to the connection portion on the lead 2, and the ultraviolet curable resin is irradiated with ultraviolet rays to be cured, Further, a semiconductor device is known in which it is covered with a resin 8. According to this, since the thin metal wire 7 is fixed to the lead 2 by the ultraviolet curable resin, the outer skin resin 8 is less susceptible to the thermal expansion and contraction, and the electrical connection is made. Although the problem of making sure can be solved, it is necessary to supply the ultraviolet curable resin and to cure it by irradiating it with ultraviolet rays, and it is necessary to perform these operations after the wire bonding work is completed. There was a problem that it was necessary.

【００１２】また、金属細線の接続予定部に予め還元性
ガス、例えば水素ガスの炎を吹き付け、リードフレーム
１表面の酸化膜を含む汚染物質を除去してリードフレー
ム１の金属素地を露呈させ、金属細線を直接的にリード
フレームと接触させることも知られている。（特開昭５
６−９３３３８号公報参照） しかしながら、この方法では、空気中で燃焼した水素か
ら水を生じ、リードフレーム１の表面を濡らすだけでな
く、設備の可動部分に錆を生じさせるという問題があ
り、設備の点検保守が煩雑になるという問題もあった。Further, a flame of reducing gas, for example, hydrogen gas is blown to the portion of the thin metal wire to be connected in advance to remove contaminants including oxide film on the surface of the lead frame 1 to expose the metal base of the lead frame 1. It is also known to directly contact a thin metal wire with a lead frame. (JP-A-5
However, in this method, there is a problem that not only the surface of the lead frame 1 is wetted by water generated from hydrogen burned in the air, but also rust is generated in a movable part of the equipment. There was also a problem that the inspection and maintenance of was complicated.

【００１３】[0013]

【課題を解決するための手段】本発明は上記課題の解決
を目的として提案されたもので、半導体ペレット上の電
極とこの半導体ペレットに近接配置されたリードの遊端
部とを金属細線によりボンディングツールにて順次圧着
して電気的に接続するワイヤボンダにおいて、上記金属
細線が接続される部分に紫外線を照射する紫外線照射装
置を付加したことを特徴とするワイヤボンダを提供す
る。紫外線照射されるリード表面には非酸化性ガスを供
給することによりより効果を高めることができる。この
場合、非酸化性ガスを紫外線によりイオン化することに
より、より一層の効果を得ることができる。SUMMARY OF THE INVENTION The present invention has been proposed for the purpose of solving the above-mentioned problems, and an electrode on a semiconductor pellet and a free end portion of a lead arranged in the vicinity of the semiconductor pellet are bonded with a fine metal wire. A wire bonder in which an ultraviolet irradiation device that irradiates ultraviolet rays is added to a portion to which the metal thin wire is connected, in a wire bonder that is sequentially crimped by a tool and electrically connected. The effect can be further enhanced by supplying a non-oxidizing gas to the surface of the lead irradiated with ultraviolet rays. In this case, further effects can be obtained by ionizing the non-oxidizing gas with ultraviolet rays.

【００１４】[0014]

【作用】リードフレーム上の金属細線が接続される部分
に紫外線を照射するようにしたから、金属細線が接続さ
れる領域に付着した有機物が分解除去され、汚染物が接
合領域に閉じ込められることなく良好な接続ができる。[Function] Since the portion of the lead frame to which the thin metal wire is connected is irradiated with ultraviolet rays, the organic substances adhering to the region to which the thin metal wire is connected are decomposed and removed, and the contaminants are not trapped in the bonding area. Good connection is possible.

【００１５】[0015]

【実施例】以下に本発明の実施例を図１から説明する。
図において、図３及び図４と同一部分には同一符号を付
し重複する説明を省略する。図中、１３は本発明の特徴
部分である紫外線照射装置で、ガイドレール９上のボン
ディング作業領域の手前に配置され、リード２のボンデ
ィング予定部に紫外線を照射する。この紫外線照射装置
１３は紫外線光源１４と、紫外線を一方向に反射して集
光する反射ミラー１５と、一方向に進行する光をガイド
する光ガイド１６と、紫外線光が所望部分以外に漏れな
いようにカバーするハウジング１８とからなる。紫外線
光源１４は３２０ｎｍ〜４００ｎｍの波長領域の紫外線
を発生する水銀灯が用いられる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT An embodiment of the present invention will be described below with reference to FIG.
In the figure, the same parts as those in FIGS. 3 and 4 are designated by the same reference numerals, and the duplicated description will be omitted. In the figure, reference numeral 13 denotes an ultraviolet irradiation device which is a characteristic part of the present invention, which is arranged in front of the bonding work area on the guide rail 9 and irradiates an intended bonding portion of the lead 2 with ultraviolet light. The ultraviolet irradiation device 13 includes an ultraviolet light source 14, a reflection mirror 15 that reflects and collects ultraviolet light in one direction, a light guide 16 that guides light traveling in one direction, and the ultraviolet light does not leak to portions other than desired portions. And a housing 18 for covering. As the ultraviolet light source 14, a mercury lamp that emits ultraviolet light in the wavelength range of 320 nm to 400 nm is used.

【００１６】このように、リードフレーム１のリード２
の金属細線７が接続される部分に紫外線光源１４からの
紫外線を集中させることにより、リード２表面に付着し
た有機物などの汚染物質を活性化し揮発性ガスに分解し
て除去することができる。このとき、リード２上の紫外
線照射領域に非酸化性ガスを供給すると、活性化した汚
染物質から生じた分解ガスが非酸化性ガスにより搬送さ
れリード２表面から速やかに除去できリード２への再付
着を防止できる。図２は紫外線照射装置１３の他の実施
例を示す。図において、図３、図４、図１と同一部分に
は同一符号を付し重複する説明は省略する。In this way, the lead 2 of the lead frame 1
By concentrating the ultraviolet light from the ultraviolet light source 14 on the portion to which the thin metal wire 7 is connected, contaminants such as organic substances attached to the surface of the lead 2 can be activated and decomposed into a volatile gas to be removed. At this time, if a non-oxidizing gas is supplied to the UV irradiation area on the lead 2, the decomposed gas generated from the activated pollutant is conveyed by the non-oxidizing gas and can be quickly removed from the surface of the lead 2, and the re-adhesive gas to the lead 2 is regenerated. Adhesion can be prevented. FIG. 2 shows another embodiment of the ultraviolet irradiation device 13. In the figure, the same parts as those in FIG. 3, FIG. 4 and FIG.

【００１７】図において、１８ａ、１８ｂ、１８ｃはそ
れぞれ光源１４から放出され反射ミラー１５によって集
光された紫外線をガイドする光ガイドで、図示例ではプ
リズムとミラーが用いられ、プリズム１８ａは光源１４
からの光を直交する反対方向に反射し、第１ミラー１８
ｂ、１８ｂによりハウジング１７の平行する筒部（ダク
ト）１７ａ、１７ａを通る同一方向に反射させ、さらに
第２ミラー１８ｃ、１８ｃにより互いに対向する方向に
光りの向きを変え、ハウジング１７（ダクト１７ａ、１
７ａ）の外端部より紫外線を放出し、リード２の金属細
線７が接続される領域に照射する。この装置では、ハウ
ジング１７の反射ミラー１５背面にガス供給口１９を設
け、このガス供給口１９から非酸化性ガス、例えばアル
ゴンガスを供給する。In the figure, 18a, 18b and 18c are light guides for guiding the ultraviolet rays emitted from the light source 14 and condensed by the reflection mirror 15. In the illustrated example, a prism and a mirror are used, and the prism 18a is the light source 14.
Light from the first mirror 18
b and 18b, the light is reflected in the same direction passing through the parallel cylindrical portions (ducts) 17a and 17a of the housing 17, and the second mirrors 18c and 18c change the direction of light to the opposite direction, and the housing 17 (duct 17a, 1
Ultraviolet rays are emitted from the outer end of 7a), and the area of the lead 2 to which the thin metal wire 7 is connected is irradiated. In this apparatus, a gas supply port 19 is provided on the rear surface of the reflection mirror 15 of the housing 17, and a non-oxidizing gas such as argon gas is supplied from the gas supply port 19.

【００１８】この非酸化性ガスは、ハウジング１７内を
通り、ダクト１７ａ外端の開口部１７ｂ、１７ｂから放
出されるが、ダクト１７ａ内を移動する間に紫外線に曝
されイオン化する。イオン化したガスは、リード２表面
に付着した汚染物質が活性化することにより生じた分解
したガスと結合しやすく、汚染物質の分解を促進しボン
ディング作業までにリード２表面から汚染物質を完全に
除去することができる。この紫外線照射装置１３はワイ
ヤボンディングポジションに配置することにより、金属
細線７の表面に付着した汚染物質の分解除去もでき、ボ
ンディング品質をより良好にできる。本発明を適用する
ことにより、パワーサイクル試験での不良率が低減し、
不良の内容を調べてみるとリード２または金属細線７の
汚染によるものとみられる不良は皆無であった。This non-oxidizing gas passes through the inside of the housing 17 and is discharged from the openings 17b, 17b at the outer end of the duct 17a. While being moved inside the duct 17a, it is exposed to ultraviolet rays and ionized. The ionized gas is easy to combine with the decomposed gas generated by the activation of the pollutant adhering to the surface of the lead 2 and accelerates the decomposition of the pollutant to completely remove the pollutant from the surface of the lead 2 before the bonding work. can do. By disposing this ultraviolet irradiation device 13 at the wire bonding position, it is possible to decompose and remove the contaminants adhering to the surface of the thin metal wire 7, and to improve the bonding quality. By applying the present invention, the defect rate in the power cycle test is reduced,
Examining the contents of the defects, there were no defects that could be attributed to contamination of the leads 2 or the thin metal wires 7.

【００１９】尚、ボンディングツール１２は金属細線７
の引き回し方向がほぼ同一方向のものに限定されるた
め、半導体ペレット６表面の全方向に金属細線７を接続
する必要のある場合には、キャピラリ状のボンディング
ツールを用いることができる。また、光ガイド１６はプ
リズムや反射ミラーの組み合わせあるいは光ファィバを
用いることができる。また、図示例では光源１４をガイ
ドレール９の上方に配置しているが、ガイドレール９の
側方に配置して、光をリード２上に導くようにしてもよ
い。さらには、図示例では紫外線照射装置１３を一箇所
設けたがワイヤボンディングポジションを含む複数ポジ
ションにそれぞれ設けることもできる。また非酸化性ガ
スは、アルゴンだけでなく、窒素ガスなどの不活性ガ
ス、水素ガスなどの還元性ガス、あるいはこれらの混合
ガスを用いることができる。The bonding tool 12 is a thin metal wire 7.
Since the drawing directions are limited to the substantially same directions, when it is necessary to connect the thin metal wires 7 in all directions on the surface of the semiconductor pellet 6, a capillary-shaped bonding tool can be used. Further, the light guide 16 can use a combination of prisms and reflection mirrors or an optical fiber. Further, although the light source 14 is arranged above the guide rail 9 in the illustrated example, it may be arranged on the side of the guide rail 9 to guide the light onto the lead 2. Further, in the illustrated example, the ultraviolet irradiation device 13 is provided at one place, but it may be provided at a plurality of positions including the wire bonding position. As the non-oxidizing gas, not only argon but also an inert gas such as nitrogen gas, a reducing gas such as hydrogen gas, or a mixed gas thereof can be used.

【００２０】[0020]

【発明の効果】以上のように本発明によれは、リードフ
レームの取り扱う際に誤ってリードを汚染したり、金属
細線に極微量の潤滑油が残留していても、リードの金属
細線を接続する領域から汚染物質を分解し除去できるか
ら、良好なボンディングが可能となり、リードフレーム
の取り扱いも容易となる。またワイヤボンダのガイドレ
ールに沿って紫外線照射装置を配置するだけでよいか
ら、余分な作業空間と作業時間とが不要で、簡単な設備
を付加するだけで半導体装置の信頼性を高めることがで
きる。As described above, according to the present invention, even when the lead frame is erroneously contaminated when the lead frame is handled, or even if a very small amount of lubricating oil remains on the metal thin wire, the metal thin wire of the lead is connected. Since contaminants can be decomposed and removed from the area to be bonded, good bonding can be performed and the lead frame can be easily handled. Further, since it is only necessary to dispose the ultraviolet irradiation device along the guide rail of the wire bonder, an extra work space and work time are unnecessary, and the reliability of the semiconductor device can be improved by adding simple equipment.

【図面の簡単な説明】[Brief description of drawings]

【図１】 本発明の実施例を示すワイヤボンダの正断面
図FIG. 1 is a front sectional view of a wire bonder showing an embodiment of the present invention.

【図２】 本発明の他の実施例を示すワイヤボンダの要
部平面図FIG. 2 is a plan view of a main part of a wire bonder showing another embodiment of the present invention.

【図３】 リードフレームを用いた半導体装置の一例を
示す一部断面斜視図FIG. 3 is a partial cross-sectional perspective view showing an example of a semiconductor device using a lead frame.

【図４】 図３半導体装置の製造に用いられるワイヤボ
ンダの一例を示す側断面図FIG. 4 is a side sectional view showing an example of a wire bonder used for manufacturing a semiconductor device.

【符号の説明】[Explanation of symbols]

２ リード ６ 半導体ペレット ７ 金属細線 １２ ボンディングツール １３ 紫外線照射装置 １４ 紫外線光源 １７ａ ダクト １７ｂ ダクト開口部 １９ 非酸化性ガス供給口 2 Lead 6 Semiconductor pellet 7 Metal fine wire 12 Bonding tool 13 UV irradiation device 14 UV light source 17a Duct 17b Duct opening 19 Non-oxidizing gas supply port

Claims (3)

【特許請求の範囲】[Claims] 【請求項１】半導体ペレット上の電極とこの半導体ペレ
ットに近接配置されたリードの遊端部とを金属細線によ
りボンディングツールにて順次圧着して電気的に接続す
るワイヤボンダにおいて、 上記金属細線が接続される部分に紫外線を照射する紫外
線照射装置を付加したことを特徴とするワイヤボンダ。1. A wire bonder in which an electrode on a semiconductor pellet and a free end of a lead arranged in the vicinity of the semiconductor pellet are sequentially crimped by a bonding tool with a metal thin wire to electrically connect them, wherein the metal thin wire is connected. A wire bonder characterized in that an ultraviolet irradiation device for irradiating ultraviolet rays is added to a portion to be exposed. 【請求項２】紫外線照射されるリード表面に非酸化性ガ
スを供給し接触させる非酸化性ガス供給部を設けたこと
を特徴とする請求項１に記載のワイヤボンダ。2. The wire bonder according to claim 1, further comprising a non-oxidizing gas supply unit for supplying and contacting a non-oxidizing gas on the surface of the lead irradiated with ultraviolet rays. 【請求項３】非酸化性ガスを供給するダクト内に紫外線
光源からの光を供給し、ダクト外端部を金属細線が接続
される部分に開口させ、紫外線及び紫外線によりイオン
化された非酸化性ガスを前記開口部より供給するように
したことを特徴とする請求項２に記載のワイヤボンダ。3. A non-oxidizing agent ionized by ultraviolet rays and ultraviolet rays by supplying light from an ultraviolet light source into a duct for supplying a non-oxidizing gas, opening the outer end portion of the duct to a portion to which a thin metal wire is connected. The wire bonder according to claim 2, wherein gas is supplied from the opening.
JP12122095A 1995-05-19 1995-05-19 Wire bonder Expired - Fee Related JP3473000B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12122095A JP3473000B2 (en) 1995-05-19 1995-05-19 Wire bonder

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12122095A JP3473000B2 (en) 1995-05-19 1995-05-19 Wire bonder

Publications (2)

Publication Number Publication Date
JPH08316265A true JPH08316265A (en) 1996-11-29
JP3473000B2 JP3473000B2 (en) 2003-12-02

Family

ID=14805871

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12122095A Expired - Fee Related JP3473000B2 (en) 1995-05-19 1995-05-19 Wire bonder

Country Status (1)

Country Link
JP (1) JP3473000B2 (en)

Also Published As

Publication number Publication date
JP3473000B2 (en) 2003-12-02

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