JPH08306817A - Semiconductor device and its manufacture - Google Patents

Abstract

PURPOSE: To facilitate machining of a thin type semiconductor device and reduce the cost. CONSTITUTION: A wiring pattern 11 of a semiconductor device is formed on the surface of a P.W.B(printed wiring board) 10, and a penetrating hole 12 and a penetrating hole for resin flow are formed on the center and the end part of the P.W.B 10. The penetrating hole 12 exposes a pad of a mounted semiconductor element 20 when viewed from the surface of the P.W.B 10. The semiconductor element 20 is fixed on the back of the P.W.B 10 so as to expose the pad which is connected with the wiring pattern 11 via a wire passing the penetrating hole 12. After the semiconductor element 20 is mounted, resin sealing is performed, and both surfaces of the semiconductor element 20 are sealed with resin 30 flowing in the penetrating hole for resin flow.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is used as a thin semiconductor device such as a thin IC memory card module, and is used in a printed wiring board (Printed Wiring Board;
The above) relates to a semiconductor device in which a semiconductor element is mounted by surface mounting and a manufacturing method thereof.

[0002]

2. Description of the Related Art Conventionally, techniques in such a field include:
For example, there is one shown in the following documents. Reference: Japanese Patent Laid-Open No. 55-56647. Among semiconductor integrated circuits used for wrist watches, cameras, IC cards, etc., an extremely thin package structure having a thickness of about 0.5 to 2 mm is required. ing. In the conventional semiconductor device, a semiconductor element is mounted at a predetermined position of a lead frame and resin sealing is performed, or as shown in the above-mentioned document, a P.P. W. A semiconductor element such as a semiconductor integrated circuit is directly mounted on the B.B. W. After connecting to the metal wiring on B with a wire, it is sealed with epoxy resin or the like. That is, a chip-on-board package is shown in the above document. P.
W. A pattern serving as a terminal to the outside is formed on the surface of B. W. It is connected to the bonding pattern formed on the back surface of B through a through hole. The semiconductor element is P.P. W. The back surface of the semiconductor element is fixed to the bottom surface of the semiconductor element by using an adhesive, and W. The pad formed on the surface not in contact with B.P. W. It is connected to the B bonding pattern by a wire. After the pad of the semiconductor element is connected to the surrounding bonding pattern, the semiconductor element is sealed and molded with resin to complete the semiconductor device.

[0003]

However, the conventional semiconductor device has the following problems. In a semiconductor device using a lead frame, the thickness and area of the entire semiconductor device are large. Further, according to the method disclosed in the above-mentioned document, the P.I. W. Since it was necessary to form a pattern on the two front and back surfaces of B, it was necessary to use a double-sided board having a structure in which copper foil was attached to the front and back surfaces, and it was also necessary to process and form a predetermined number of through holes. Furthermore, in order to reduce the thickness of the semiconductor element mounting portion, P. W. It was also necessary to apply spot facing to B. That is, there are major problems in terms of processing and cost, and technically satisfactory products cannot be obtained.

[0004]

In order to solve the above problems, the first to fifth inventions are directed to a surface mount type semiconductor device having a package structure in which a semiconductor element having a terminal for contact is mounted. P. W. B, a semiconductor element, a conductive material, and a sealing material are provided. P. W.
B has a wiring pattern formed on the surface and has a through hole. The semiconductor element is formed so that the terminal is located at the position of the through hole. W. It is arranged on the back surface of B and has a structure in which a conductive material connects the terminal of the semiconductor element and the extending portion of the wiring pattern. The sealing material is configured to seal the wiring pattern extending portion, the through hole, the conductive material, and the semiconductor element.
4th and 5th invention is provided on the wiring pattern in the 1st-3rd invention, and the conductor for connecting the wiring pattern to another board | substrate is provided.

The sixth to ninth inventions take the following method in a method of manufacturing a surface mount type semiconductor device having a package structure in which a semiconductor element having a contact terminal is mounted. That is, the P.P. W. B is formed with a through hole for exposing the terminals of the semiconductor element when the semiconductor element is fixed later.
The P. W. The semiconductor element is fixed to the back surface of B at a position where the terminal of the semiconductor element is exposed from the through hole. Then, the terminal and the extending portion of the wiring pattern are connected by a conductive material, and the wiring pattern extending portion, the through hole, the conductive material, and the semiconductor element are arranged in the sealing material. In a ninth aspect of the invention, a conductor for connecting the wiring pattern to another substrate is fixed on the wiring pattern of the sixth to eighth aspects of the invention.

[0006]

According to the first to fifth aspects of the invention, the semiconductor device is constructed as described above. W. A wiring pattern is formed on the surface of B. The P. W. The terminals of the semiconductor element arranged on the back surface of B are made of a conductive material passing through the through hole. W. It is connected to the extended portion of the wiring pattern formed on the surface of B. That is, the wiring pattern and the terminals of the semiconductor element are connected by the conductive material without drawing the outer shape of the semiconductor element. Signals are transmitted and received in the semiconductor element via the wiring pattern and the conductive material. The wiring pattern extension, the through hole, the conductive material, and the semiconductor element are protected by the sealing material. According to the fourth and fifth inventions, the semiconductor device according to the first to third inventions is connected to another substrate by the fixed conductor on the wiring pattern. That is, the semiconductor element is connected to another substrate without using the lead frame.

According to the sixth to ninth inventions, the semiconductor element is fixed to the back surface of the printed wiring board having the wiring pattern formed on the front surface. At this time, the terminal of the semiconductor element is connected to the P. W. Exposed on the surface of B. The terminal exposed on the surface and the extending portion of the wiring pattern are connected by a conductive material. After the connection, the wiring pattern extending portion, the through hole, the conductive material, and the semiconductor element are sealed with a sealing material.
That is, the semiconductor device of the first to fifth inventions is manufactured. According to the ninth invention, the conductor is fixed on the wiring pattern in the sixth to eighth inventions. That is, the semiconductor devices of the fourth and fifth inventions are manufactured.

[0008]

First Embodiment FIG. 1 is a sectional view of a semiconductor device showing a first embodiment of the present invention. This semiconductor device includes a P.P. W. B
10 is used and its P. W. The wiring pattern 11 is formed on the surface of B10. P. W. The semiconductor element 20 is mounted on the back surface of B10. P. W. A through hole 12 is provided in the center of B10, and the terminal of the semiconductor element 20 and the wiring pattern 11 are connected by a wire passing through the through hole 12. The front surface and the back surface of the semiconductor element 20 and the through hole 12 are sealed with the sealing resin 30. Figure 2
(1) to (3) are P.s.
W. It is a figure which shows B, a semiconductor element, and an adhesive material. FIG. W. B is a top view of the semiconductor element, and FIG. W. An adhesive material for fixing the semiconductor element to B is shown. P. W. B10 is constituted by using a base material such as glass epoxy, and the P. W. B
Wiring patterns 11 to be eight terminals are formed on the surface of 10. In addition, P. W. A through hole 12 for exposing a terminal of a semiconductor element is provided in the central portion of B10, and further,
Two through holes 13 for resin circulation, which will be described later, are provided in the end portion. Each pattern 11 is formed so as to extend near the outer periphery of the through hole 12. Semiconductor device 20
Pads 21 which are eight terminals for bonding are formed in the central portion of the surface of the. In addition, the semiconductor element 20 is a P.O. W. The adhesive 22 for fixing to B10 is in the form of a thin film.
W. It is formed in a frame shape as shown in FIG. 2C so that it can be fixed to B.

Next, a procedure for manufacturing the semiconductor device of FIG. 1 will be described with reference to the drawings. 3 (1) and 3 (2) are views showing a manufacturing method (1) of the semiconductor device using FIG. 2, FIG. 3 (1) is a top view, and FIG. It is a figure. Note that, in FIG. 3, elements common to those in FIG. 2 are denoted by common reference numerals. First, the semiconductor element 2
0 using the adhesive 22. W. It adheres to the back side of B10. At this time, each pad 2 on the surface of the semiconductor element 20
1 is the P. W. When viewed from the front surface side of B10, it is arranged so as to be exposed through the through hole 12, and as shown by the broken line in FIG. 3 (1), the periphery of the upper portion of the semiconductor element 20 is covered with a frame-shaped adhesive 22. W. It is fixed to the back surface of B10. Then, each pad 21 is connected to each pattern 11 by a wire 23 which is a conductive material. That is, P. W. B1
As shown in FIG. 3B, each pad 21 at the position on the back side of P. 0 is connected to the P.P. W. It is connected to each pattern 11 on the surface of B10.

4 (1) to 4 (3) are views showing a method of manufacturing a semiconductor device (part 2) using FIG. 2, FIG. 4 (1) is a top view, and FIG. 4 (2). Is a sectional view thereof, and FIG. 3C is a rear view thereof. In addition, in FIG.
Elements common to those in FIG. 2 are designated by common reference numerals.
Each pad 21 and P. W. After the patterns 11 on the surface of B10 are respectively connected, sealing molding is performed with an epoxy resin or the like. The extending portion of the wiring pattern 11, the through hole 12, the wire 23, and the semiconductor element 20 are sealed by the sealing molding. At the time of this sealing molding, for example, P. W. B
The resin 30 injected from the surface side of 10 passes through the through hole 13. Therefore, P. W. The resin also spreads on the back surface of B10, and the semiconductor element 20 is completely covered at once, as shown in FIG. That is, P. W. On the surface side of B10, the through hole 1
2, 13 and the wires 23, pads 21 and the like are covered with resin 30. W. On the back side of B10, the semiconductor element 20
Is entirely covered with the resin 30.

As described above, in the first embodiment, the P.O. W. Since the semiconductor device is configured by using B10 and the pad 21 and the wiring pattern 11 are connected through the through hole 12, the P.B. W. B10 is improved with a single-sided substrate instead of a double-sided substrate. Therefore, the pattern formation is facilitated and the through hole is not required, and
W. The manufacturing cost of B10 can be reduced. Further, even if the element size is expanded with the increase in the function of the semiconductor element or the size is reduced with the innovation of the forming technology of the semiconductor element, there is a follow-up property, and various elements are shared by the common P.P. W.
The structure of B10 can be used. Furthermore, P.
W. Since B10 itself can be formed thinly and with high precision,
The thickness of the entire semiconductor device can be made sufficiently thin. In addition, P. W. The required area of B10 is substantially determined by the area of the region in which the plurality of pads 21 are formed and the outer shape of the through hole 12. That is, it is not necessary to extend the wire 23 from the outer shape of the semiconductor device 20 to the outside.
1 formed P.I. W. It is also possible to make the area of B10 smaller than the area of the semiconductor element 20, and the area of the entire semiconductor device becomes small.

Second Embodiment FIGS. 5 (1) to 5 (3) show a semiconductor device according to a second embodiment of the present invention. W. It is a figure which shows B, a semiconductor element, and an adhesive material. FIG. W. B is a top view of the semiconductor element, and FIG.
W. An adhesive material for fixing the semiconductor element to B is shown. As shown in FIG. W. B40 is composed of a base material such as glass epoxy, and the P. W. Wiring patterns 41 that serve as a plurality of terminals are formed on the surface of B40. Each pattern 41 constitutes a part of the terminal of the semiconductor device, and is formed on both sides of the through hole 42 so as to be arranged substantially evenly. In addition, P. W. An oblong exposure through hole 42 formed in a straight line is provided at the center of B40. Those patterns 41 and through holes 4
A bus bar 43 is formed between the two. The bus bar 43 is insulation-coated with a solder resist (not shown) made of an insulating material. P. W. Figure 5 mounted on B40
A plurality of pads 51 for bonding are formed in a row at the center of the surface of the semiconductor element 50 of (2). This structure has become mainstream in large capacity memory devices in recent years. O. It is a pad array specification conforming to the C (Lead On Chip) mounting structure. If the semiconductor element 50 is a P. W.
The adhesive 52 for fixing to the B40 is a thin film, and the periphery of the upper portion of the semiconductor element 50 is made of P. W. B4
It is formed in a frame shape so that it can be fixed to 0.

6 (1) to 6 (3) are views showing a method of manufacturing a semiconductor device using FIG. 5. Referring to FIG. W. A procedure for manufacturing a semiconductor device in which the semiconductor element 50 is mounted on B40 will be described. In addition, in FIG.
The same parts as those in FIG. 5 are designated by the same reference numerals. First, the semiconductor element 50 is bonded to the P. W. B4
Stick to the backside of 0. At this time, each pad 51 on the surface of the semiconductor element 50 is W. When viewed from the front surface side of B40, it is arranged so as to be exposed through the through hole 42.
As indicated by the broken line in the figure, the periphery of the upper portion of the semiconductor element 50 is a frame-shaped adhesive 52, which is formed of P. W. It is fixed to the back surface of B10. Subsequently, each pad 51 is connected to each of the plurality of patterns 41 by a wire 53. That is, FIG.
As in (1), P. W. Each pad 51 on the back side of B40 is connected to each pattern 41 by a plurality of wires 53 passing through the through holes 42. At this time,
Bonding over the bus bar is performed, but the bus bar 43
Is covered with solder resist, so the wire 53
Short-circuit troubles due to drooping are prevented.

Next, sealing molding with the epoxy resin 60 is performed. At the time of sealing molding of resin, P. W. The resin 60 injected from the front surface side of B40 causes P. W. On the front surface side of B10, the through hole 42, the wire 53, and the pad 52
Etc. are covered with resin 60 as shown in FIG. 6 (2). Then, as shown in FIG. 6C, a spherical conductor 61 that functions as a terminal is formed into a pattern 41 with solder paste or the like.
Temporarily fix to. Thereby, the semiconductor device is completed. As the conductor 61, for example, solder is used. Figure 7
FIG. 8 is a diagram showing a mounting mode of the semiconductor device manufactured in FIG. 6, and elements common to FIG. 5 are denoted by common reference numerals. In the completed semiconductor device, the spherical conductor 6
The temporarily fixed side of 1 is placed opposite to the other substrate 70, and the semiconductor device is mounted on the substrate 70 by a method such as reflow mounting using a solder paste. As described above, in this embodiment, the pad 51 is formed using the through hole 42.
Since the pattern 41 is connected to the L. O. C (Lead
On-chip) A semiconductor device having a pad array conforming to the mounting structure is compared to the case where a lead frame is used.
A far smaller and thinner semiconductor device can be obtained. If a semiconductor element whose surface is completely coated by means of polyimide coating or the like is used, P. W. Equivalent to B40 or P. W. It is possible to mount a semiconductor element having a size larger than B40. That is, a chip size or under chip size package is also possible.

Further, since the bus bar 43 is covered with the solder resist, the short-circuit trouble at the time of bonding over the bus bar can be prevented. On the other hand, as compared with the case where the lead frame is used, W. The degree of freedom of patterning at B40 is far greater. That is, since the semiconductor device is connected to the substrate 70 by using a plurality of conductors 61 that are independent of the bus bar 43 without using the lead frame, the bus bar is purposely wire-bonded as in the case of the lead frame. There is no need to set it near the swing point. Therefore, for example, the bus bar 43 can be set through the outside of the pattern 41. Therefore, it is not necessary to pay attention to the loop control for the wiring route of the wire 53, which is advantageous in terms of production. On the other hand, since the spherical conductor 61 is temporarily fixed on the pattern 41, B.B. has recently been attracting attention as a new mounting form of a multi-pin LSI such as a CPU or a logic circuit around it. G. When mixedly mounted on the same substrate 70 together with A (Ball Grid Array), the solder reflow conditions can be adjusted.

Third Embodiment FIG. 8 is a structural diagram of a semiconductor device showing a third embodiment of the present invention. Elements common to those in FIG. 5 are designated by common reference numerals. The P. W. B80 is the P. B. used in the second embodiment. W. P.B.
W. B, two through holes 81 through which the sealing resin 60 circulates are newly provided, and the other patterns 41 and the through holes 42 are formed by P.P. W. It has the same configuration as B40. Also,
P. W. The semiconductor element 50 mounted on the B80 also has the same structure as that of the second embodiment. Also in the case of manufacturing the semiconductor device shown in FIG. W. The pad 51 fixed to a predetermined position on the back surface side of the B80 with an adhesive 52 and exposed on the surface of the through hole 42 is connected to the pattern 41 by a wire 53 passing through the through hole 42. After the pad 51 and the pattern 41 are connected,
For example, P. W. Resin sealing with the resin 60 is performed from the front surface side of B80. The front and back surfaces of the semiconductor element 50 are completely covered by the resin sealing as shown in FIG. That is, at the time of resin sealing, the through hole 44 allows the resin 60 to flow. Therefore, the P.P. W. B8
The exposed portion of the semiconductor element 50 when viewed from the surface of the semiconductor element 50 and the wire 53 are covered with the resin 60A. W. B8
The exposed portion of 0 from the back surface is covered with resin 60B. As described above, in this embodiment, the P.I. W. B80 constitutes a semiconductor device. Therefore, the exposed portion of the semiconductor element 50 can be covered with the resin all at once, and the semiconductor device having the effect of the second embodiment can be provided with more reliable moisture resistance. .

Fourth Embodiment FIG. 9 is a structural diagram of a semiconductor device showing a fourth embodiment of the present invention. Elements common to those in FIG. 5 are designated by common reference numerals. The semiconductor device of the present embodiment is provided with the projection 62 which provides a predetermined clearance between the substrates 70 when mounted on another substrate 70 in the semiconductor device of the second embodiment.
This semiconductor device has the same P.V. W. B4
The semiconductor element 50 is mounted on the memory cell 0. The plurality of spherical conductors 61 are also temporarily fixed on the pattern 41 as in the second embodiment. P. of the semiconductor element 50 W. The part exposed on the surface of B40 and the wire 53 are made of resin 60 as shown in FIG.
It is sealed with. On the sealed resin 60, a protrusion 62 made of the same epoxy resin as the resin 60 is provided. The method of manufacturing this semiconductor device is the same as that of the second embodiment, and the protrusions 62 are formed simultaneously at the time of resin sealing. FIG. 10 is a diagram showing the semiconductor device of FIG. 9 mounted on another substrate. When the semiconductor device is mounted on another substrate 70, the projection 62 supports the semiconductor device and the distance between the semiconductor device and the substrate 70 becomes a desired value H. As described above, since the protrusion 62 is provided in this embodiment, the resin 60 of the semiconductor device is provided.
A desired clearance can be set between the substrate 70 and the substrate 70. Therefore, the accuracy of the mounting dimensions is improved, and the structure is effective for cleaning the flux after mounting.

The present invention is not limited to the above embodiment, and various modifications can be made. The following are examples of such modifications. (1) In the above embodiment, P. W. B10.40 and 80 are made of glass epoxy, and resins 30 and 60 are made of epoxy resin. However, these materials should be excellent in insulation and moisture resistance, and can be made of other materials. Is. (2) The conductor 61 may also be connectable to the substrate 70. The alloy is not limited to the solder, and other alloys having excellent conductivity and workability can be used. (3) The fourth embodiment has a structure in which the projection 62 is provided on the semiconductor device of the second embodiment. However, even if the projection is provided in the third embodiment, the fourth embodiment You can expect the same effect as.

[0019]

As described above in detail, according to the first to fifth inventions, the P.I. W. B is provided with a through hole, and P.
W. The terminals of the semiconductor element arranged on the back surface of B are made of a conductive material passing through the through hole. W. It is configured to be connected to the wiring pattern formed on the surface of B. Therefore, the wiring pattern and the terminals of the semiconductor element are connected by the conductive material without drawing the outer shape of the semiconductor element. Therefore, P. W. B
Since it is not necessary to configure the substrate with a double-sided substrate, a thin semiconductor device can be obtained without spot facing. In addition, there is no need for through hole processing. Furthermore, since the connection can be made regardless of the size of the semiconductor element, it is possible to reduce the size of the semiconductor device as a whole and to form a semiconductor device which can follow the size change of the semiconductor element. That is, the processing of the semiconductor device can be facilitated and the cost can be reduced. According to the fourth and fifth inventions, since the conductor for connecting to another substrate is provided on the wiring pattern in the first to third inventions, the L.L. O. A semiconductor device that is smaller and thinner than the C structure can be formed, and
The flexibility of the pattern increases, which is advantageous in terms of production. Also,
B. Implementation of recent CPUs, logic circuits, etc. G. A and
A semiconductor device that can be mounted on the same substrate can be configured.

According to the sixth to ninth inventions, the P.P. W. A through hole is formed in B.
W. A semiconductor element is fixed on the back surface of B at a position where the terminal is exposed from the through hole, and the terminal and the extended portion of the wiring pattern are connected by a conductive material. Then, the wiring pattern extending portion, the through hole, the conductive material, and the semiconductor element are arranged in the sealing material. Therefore, the semiconductor device of the first to fifth inventions can be easily realized. Therefore, the entire semiconductor device can be downsized, and the cost can be reduced. According to the ninth invention, since the conductor for connecting to another substrate is fixed on the wiring pattern of the sixth to eighth inventions, the semiconductor device of the fourth and fifth inventions can be realized. Therefore, L. O. A semiconductor device that is smaller and thinner than the C structure can be formed, and the degree of freedom of patterns is increased, which is advantageous in terms of production. In addition, the B.I. G. A
With this, a semiconductor device that can be mounted on the same substrate can be manufactured.

[Brief description of drawings]

FIG. 1 is a cross-sectional view of a semiconductor device showing a first embodiment of the present invention.

2 is a diagram illustrating a configuration of P.I. W. It is a figure which shows B, a semiconductor element, and an adhesive material.

FIG. 3 is a method of manufacturing a semiconductor device using FIG. 2 (No. 1).
FIG.

FIG. 4 is a method for manufacturing a semiconductor device using the method shown in FIG. 2 (No. 2).
FIG.

FIG. 5 is a diagram showing a structure of a P.V. W. It is a figure which shows B, a semiconductor element, and an adhesive material.

FIG. 6 is a diagram showing the method of manufacturing the semiconductor device using FIG. 5;

FIG. 7 is a diagram showing a mounting form of the semiconductor device manufactured in FIG. 6;

FIG. 8 is a structural diagram of a semiconductor device showing a third embodiment of the present invention.

FIG. 9 is a structural diagram of a semiconductor device showing a fourth embodiment of the present invention.

FIG. 10 is a diagram showing the semiconductor device of FIG. 9 mounted on another substrate.

[Explanation of symbols]

 10, 40, 80 P.I. W. B 11,41 Wiring pattern 12,42 Through hole (for exposure) 13,81 Through hole (for resin distribution) 20,50 Semiconductor element 21,51 Pad 22,52 Adhesive 23,53 Wire 30,60,60A, 60B Resin 62 protrusion

Claims (9)

[Claims] 1. A surface-mounted semiconductor device having a package structure in which a semiconductor element having a contact terminal is mounted, and a printed wiring board having a wiring pattern formed on its surface and having a through hole, and the through hole. The semiconductor element arranged on the back surface of the printed wiring board so that the terminal is located at a position, a conductive material connecting the terminal and the extended portion of the wiring pattern, the wiring pattern extended portion and the penetrating portion. A semiconductor device comprising: a hole, the conductive material, and a sealing material that seals the semiconductor element. 2. The printed wiring board has a resin through hole formed at a location different from the through hole, and the wiring pattern extending portion, the through hole, the conductive material, and the semiconductor element are formed. The semiconductor device according to claim 1, wherein the front surface and the back surface are simultaneously sealed with a resin. 3. The printed wiring board is provided with a bus bar for the semiconductor element on a surface thereof, and an upper portion of the bus bar is covered with an insulating material which insulates from the conductive material. The semiconductor device described. 4. The semiconductor device according to claim 1, further comprising a conductor fixed on the wiring pattern for connecting the wiring pattern to another substrate. 5. The terminal of the semiconductor element, the extending portion of the wiring pattern, the through hole, and the conductive material are covered with a sealing resin, and an upper portion of the sealing resin is covered with the other material. The semiconductor device according to claim 4, further comprising a protrusion that maintains a distance between the substrate and the substrate at a predetermined size. 6. A method of manufacturing a surface mount semiconductor device having a package structure in which a semiconductor element having a contact terminal is mounted, the semiconductor element being fixed to a printed wiring board having a wiring pattern formed on the surface thereof. Forming a through hole for exposing the terminal of the semiconductor element, and fixing the semiconductor element to a position on the back surface of the printed wiring board where the terminal is exposed from the through hole, the terminal and the wiring A semiconductor device, characterized in that the extending portion of the pattern is connected by a conductive material, and the wiring pattern extending portion, the through hole, the conductive material and the semiconductor element are arranged in a sealing material. Manufacturing method. 7. The printed wiring board is provided with resin through holes at locations different from the through holes, the terminals and the extending portions of the wiring pattern are connected by a conductive material, and then the wiring is provided. 7. The method of manufacturing a semiconductor device according to claim 6, wherein the pattern extending portion, the through hole, the conductive material, and the front surface and the back surface of the semiconductor element are simultaneously sealed with resin. 8. A bus bar for the semiconductor element is formed on a surface of the printed wiring board, and an insulating coating for insulating the conductive material from the bus bar is provided on an upper portion of the bus bar. 6. The method for manufacturing a semiconductor device according to 6 or 7. 9. The method of manufacturing a semiconductor device according to claim 6, wherein a conductor for connecting the wiring pattern to another substrate is fixed on the wiring pattern.