JPH08304108A - Magnetic sensor - Google Patents

Magnetic sensor

Info

Publication number
JPH08304108A
JPH08304108A JP7138915A JP13891595A JPH08304108A JP H08304108 A JPH08304108 A JP H08304108A JP 7138915 A JP7138915 A JP 7138915A JP 13891595 A JP13891595 A JP 13891595A JP H08304108 A JPH08304108 A JP H08304108A
Authority
JP
Japan
Prior art keywords
substrate
magnetic sensor
thermal conductivity
magnetic
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7138915A
Other languages
Japanese (ja)
Inventor
Misao Ichikawa
操 市川
Tokio Sekiguchi
時雄 関口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nidec Advanced Motor Corp
Original Assignee
Nidec Servo Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nidec Servo Corp filed Critical Nidec Servo Corp
Priority to JP7138915A priority Critical patent/JPH08304108A/en
Publication of JPH08304108A publication Critical patent/JPH08304108A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To prevent any thermal ill effect, and obtain a proper mid-point voltage by providing a ceramics substrate with a large thermal conductivity and forming a magnetic resistance effect element (MR element) thereon. CONSTITUTION: A ceramics substrate 9 with a large thermal conductivity is used instead of a glass substrate with a small thermal conductivity. A thin glass layer 10 is formed on the substrate 9 to smooth the surface thereof, and the sensor pattern of MR elements is formed on the layer 10. Thus, since a heat generated due to self-heating of elements 6 themselves is transmitted to the layer 10 and is radiated well through the substrate 9, a magnetic sensor, whose mid-point voltage fluctuation is reduced, can be obtained.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は磁気センサ、特に、その
表面に設けた磁気抵抗効果素子(以下MR素子という)
の抵抗変化を電気信号に変換し、回転体の速度、位置を
検出する磁気エンコーダ用磁気センサに関するものであ
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic sensor, and more particularly to a magnetoresistive effect element (hereinafter referred to as MR element) provided on the surface thereof.
The present invention relates to a magnetic sensor for a magnetic encoder, which converts the resistance change of (1) into an electric signal and detects the speed and position of a rotating body.

【0002】[0002]

【従来の技術】図3は磁気エンコーダを示し、1は磁気
ドラム、2はこの磁気ドラム1上に記録した一定記録波
長の信号である磁気情報、3は回転軸、4は上記磁気ド
ラム1と一定の間隙を介して対向配置されている磁気セ
ンサである。
2. Description of the Related Art FIG. 3 shows a magnetic encoder, 1 is a magnetic drum, 2 is magnetic information which is a signal of a constant recording wavelength recorded on the magnetic drum 1, 3 is a rotation axis, and 4 is the magnetic drum 1. The magnetic sensors are arranged to face each other with a certain gap.

【0003】図4及び図5は従来の磁気エンコーダ用磁
気センサ4を示し、5は非磁性体の絶縁基板、例えばガ
ラス基板、6はこのガラス基板5上に形成した厚さ20
0〜500ÅのNiFe,NiCo等の強磁性薄膜の異
方性MR素子、6´は上記MR素子6に連なる幅の広い
電流通路、7は上記MR素子6を保護するための保護
膜、8は端子部であって、上記従来の磁気センサ4にお
いては、上記MR素子6からフルブリッジ2相出力を得
るようにしている。
4 and 5 show a conventional magnetic sensor 4 for a magnetic encoder, 5 is a non-magnetic insulating substrate such as a glass substrate, and 6 is a thickness 20 formed on the glass substrate 5.
An anisotropic MR element of a ferromagnetic thin film of NiFe, NiCo or the like of 0 to 500Å, 6'is a wide current path connected to the MR element 6, 7 is a protective film for protecting the MR element 6, and 8 is In the conventional magnetic sensor 4, which is a terminal portion, a full bridge two-phase output is obtained from the MR element 6.

【0004】[0004]

【発明が解決しようとする課題】然しながら、上記MR
素子センサの感磁部のパターンピッチが非常に狭い場合
には隣接するMR素子間で各々自己発熱するが、基板で
あるガラスは熱伝導率が小さいため、ガラス基板を介し
ての熱放散が少なく、温度上昇により電気抵抗が変化
し、中点電圧変動を引き起こすという欠点があった。
However, the above-mentioned MR
When the pattern pitch of the magnetically sensitive portion of the element sensor is very narrow, each adjacent MR element self-heats, but since the glass that is the substrate has a low thermal conductivity, there is little heat dissipation through the glass substrate. However, there is a drawback that the electric resistance changes due to the temperature rise, which causes the midpoint voltage fluctuation.

【0005】かかる温度変化を防止すべくセンサパター
ン上にダミーの発熱抵抗体を設け、温度変化をキャンセ
ルする方法もあるがこの方法でも充分ではなかった。
There is also a method of canceling the temperature change by providing a dummy heating resistor on the sensor pattern in order to prevent the temperature change, but this method is not sufficient.

【0006】本発明は上記の欠点を除くようにしたもの
である。
The present invention eliminates the above drawbacks.

【0007】[0007]

【課題を解決するための手段】本発明の磁気センサは、
熱伝導率の大きいセラミックス基板と、このセラミック
ス基板上に形成された磁気抵抗効果素子とより成る。
The magnetic sensor of the present invention comprises:
It is composed of a ceramic substrate having a high thermal conductivity and a magnetoresistive effect element formed on the ceramic substrate.

【0008】また、本発明の磁気センサは、熱伝導率の
大きいセラミックス基板と、このセラミックス基板上に
形成されたガラス層と、このガラス層上に形成された磁
気抵抗効果素子とより成る。
Further, the magnetic sensor of the present invention comprises a ceramic substrate having a high thermal conductivity, a glass layer formed on the ceramic substrate, and a magnetoresistive effect element formed on the glass layer.

【0009】[0009]

【実施例】以下図面によって本発明の実施例を説明す
る。
Embodiments of the present invention will be described below with reference to the drawings.

【0010】本発明の磁気センサにおいては、図1及び
図2に示すように、熱伝導率の小さいガラス基板5の代
わりに熱伝導率の大きいセラミックス基板9を用いる。
In the magnetic sensor of the present invention, as shown in FIGS. 1 and 2, a ceramic substrate 9 having a high thermal conductivity is used instead of the glass substrate 5 having a low thermal conductivity.

【0011】また、MR素子6のための磁性膜の成膜を
容易にするために、一般に凹凸のあるセラミックス基板
9の表面を平滑にする目的で上記セラミックス基板9上
に薄いガラス層10を形成し、その上にMR素子6のセ
ンサパターンを形成する。
In order to facilitate the formation of a magnetic film for the MR element 6, a thin glass layer 10 is generally formed on the ceramic substrate 9 for the purpose of smoothing the surface of the ceramic substrate 9 having irregularities. Then, the sensor pattern of the MR element 6 is formed thereon.

【0012】本発明の磁気センサは上記のような構成で
あるから、各MR素子同士の自己発熱が生じても熱は薄
いガラス層10を伝わり、セラミックス基板9を介して
良好に放熱されるため、中点電圧変動の少ない設計値通
りの磁気センサとなし得る。
Since the magnetic sensor of the present invention has the above-described structure, even if the MR elements self-heat, the heat is transmitted through the thin glass layer 10 and is radiated well through the ceramic substrate 9. The magnetic sensor can be made to have the designed value with little fluctuation of the midpoint voltage.

【0013】なお、上記実施例では2相出力を得るパタ
ーン配置について述べたが、ピッチ、パターン配置、出
力相数を問わず同様の作用効果が得られる。
In the above embodiment, the pattern arrangement for obtaining the two-phase output is described, but the same operation and effect can be obtained regardless of the pitch, the pattern arrangement and the number of output phases.

【0014】[0014]

【発明の効果】上記のように本発明の磁気センサによれ
ば、熱的悪影響を防止でき、良好な中点電圧が得られる
という大きな利益がある。
As described above, according to the magnetic sensor of the present invention, there is a great advantage that a thermal adverse effect can be prevented and a good midpoint voltage can be obtained.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の磁気センサの正面図である。FIG. 1 is a front view of a magnetic sensor of the present invention.

【図2】図1に示す磁気センサのB−B線拡大断面図で
ある。
2 is an enlarged cross-sectional view of the magnetic sensor shown in FIG. 1 taken along the line BB.

【図3】磁気エンコーダの説明用斜視図である。FIG. 3 is a perspective view for explaining a magnetic encoder.

【図4】従来の磁気センサの正面図である。FIG. 4 is a front view of a conventional magnetic sensor.

【図5】図4に示す磁気センサのA−A線拡大断面図で
ある。
5 is an enlarged cross-sectional view taken along the line AA of the magnetic sensor shown in FIG.

【符号の説明】[Explanation of symbols]

1 磁気ドラム 2 磁気情報 3 回転軸 4 磁気センサ 5 ガラス基板 6 異方性MR素子 6´ 電流通路 7 保護膜 8 端子部 9 セラミックス基板 10 ガラス層 1 Magnetic Drum 2 Magnetic Information 3 Rotational Axis 4 Magnetic Sensor 5 Glass Substrate 6 Anisotropic MR Element 6'Current Path 7 Protective Film 8 Terminal Section 9 Ceramics Substrate 10 Glass Layer

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 熱伝導率の大きいセラミックス基板と、
このセラミックス基板上に形成された磁気抵抗効果素子
とより成ることを特徴とする磁気センサ。
1. A ceramic substrate having high thermal conductivity,
A magnetic sensor comprising a magnetoresistive effect element formed on the ceramic substrate.
【請求項2】 熱伝導率の大きいセラミックス基板と、
このセラミックス基板上に形成されたガラス層と、この
ガラス層上に形成された磁気抵抗効果素子とより成るこ
とを特徴とする磁気センサ。
2. A ceramic substrate having high thermal conductivity,
A magnetic sensor comprising a glass layer formed on the ceramic substrate and a magnetoresistive effect element formed on the glass layer.
JP7138915A 1995-05-15 1995-05-15 Magnetic sensor Pending JPH08304108A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7138915A JPH08304108A (en) 1995-05-15 1995-05-15 Magnetic sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7138915A JPH08304108A (en) 1995-05-15 1995-05-15 Magnetic sensor

Publications (1)

Publication Number Publication Date
JPH08304108A true JPH08304108A (en) 1996-11-22

Family

ID=15233123

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7138915A Pending JPH08304108A (en) 1995-05-15 1995-05-15 Magnetic sensor

Country Status (1)

Country Link
JP (1) JPH08304108A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9234738B2 (en) 2010-11-18 2016-01-12 Mitsubishi Electric Corporation Rotation-angle detection device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9234738B2 (en) 2010-11-18 2016-01-12 Mitsubishi Electric Corporation Rotation-angle detection device

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