JPH08288190A - Article handling member, its manufacturing method, housing container, and article handling device - Google Patents

Abstract

PURPOSE: To provide an article handling technology for retaining an article in a clean and pure state and at the same time for preventing electrostatic breakdown of the retained sheet-shaped article. CONSTITUTION: In a conductive vacuum uptake spin head 21 which is placed to a motor shaft 24 being grounded via a grounding terminal 25 and is rotated by allowing a semiconductor wafer 20 to be sucked and fixed on a wafer uptake surface 28 where a wafer uptake groove 28a which is sucked via a vacuum exhaust port 29 is engraved, the reverse side of a base material 22 is improved by a desired method and then a conductive resin coating is formed. Then, a conductive resin coating 23 is constituted of a conductive resin material which does not contain a metal constituent, the surface resistance of the conductive resin coating 23 is controlled to, for example, 10<6> (Ω/sq.)-10<11> (Ω/sq.), and static electricity electrified to a semiconductor wafer 20 being placed on the wafer uptake surface 28 is gradually discharged via the conductive resin coating 23 and the grounding terminal 25.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a handling technique and a holding technique for articles such as plate-like objects, and particularly semiconductors in semiconductor manufacturing industry, liquid crystal substrate manufacturing industry, magnetic disk manufacturing industry, multilayer wiring board manufacturing industry and the like. The present invention relates to a technique effectively applied to a technique for removing an obstacle caused by static electricity of a plate-like object in handling and holding a plate-like object such as a wafer, a liquid crystal substrate, a magnetic disk, and a multilayer wiring substrate.

[0002]

2. Description of the Related Art Conventionally, in the semiconductor manufacturing industry, in the liquid crystal substrate manufacturing industry, magnetic disk manufacturing industry, and multilayer wiring board manufacturing industry, various plate-like materials such as semiconductor wafers, liquid crystal substrates, magnetic disks, and multilayer wiring boards have been manufactured. Handling or holding,
Attitude control technology is widely used.

Regarding semiconductor wafer processing steps in the semiconductor manufacturing industry, impurity doping processing steps by ion implantation and CVD (Chemic) by plasma
al Vapor Deposition) film forming process,
A semiconductor element is formed on a semiconductor wafer through a cleaning process, a high speed rotation drying process, and the like. In these processes, the semiconductor wafer, which is an insulator, is charged with static electricity of 1 (KV) to 20 (KV).

Due to the static electricity charged on the semiconductor wafer, the semiconductor element is destroyed by the problem of particles adhering to the charged semiconductor wafer due to the electrostatic force and the discharge current flowing on the semiconductor wafer when the charged semiconductor wafer is discharged. There is a problem.

This problem becomes more and more apparent as the degree of integration of semiconductor products increases year by year and the size of semiconductor patterns decreases.

Similarly, a TFT (Thin Film T
anistor) and LCD (Liquid Crys)
A similar problem occurs in a liquid crystal substrate composed of a Tal Display).

Conventionally, UCS has been used as a countermeasure against these static electricity.
As disclosed in the literature such as "22nd VLSI Ultra Clean Technology Workshop" edited by Semiconductor Substrate Technology Study Group (published December 19, 1993), measures against static electricity on semiconductor wafers and TFT liquid crystal substrates As a static neutralization of the atmosphere by an ionizer or as a wafer handling means, carbon-fiber-containing poly-ether-ether-ketone (Poly-Ether Et
A conductive plastic semiconductor wafer handler using a material such as "her ketone" controls the surface resistance value of the surface in contact with the semiconductor wafer within a predetermined range to change the static electricity charged on the semiconductor wafer to a discharge current value within the predetermined range. Means for preventing destruction of a semiconductor element due to electrostatic discharge have been put into practical use while controlling discharge.

Further, in the technique disclosed in JP-A-59-142226, it is made of antimony-containing tin oxide,
A technique for preventing static electricity is disclosed by applying a transparent synthetic resin paint containing a conductive fine powder having a particle diameter of 0.2 μm or less to a transparent plastic product and then buffing the surface.

[0009]

The present inventors have clarified that the above-mentioned prior art has various problems as described below. Examining the problems in semiconductor wafer manufacturing, static elimination of the atmosphere with an ionizer caused problems such as the ion life time of the ionized atmosphere,
The ionized atmosphere is blocked by the electrical shield wall,
The problem of not reaching a plate-like object such as a semiconductor wafer occurs,
There is a problem that static electricity charged on a plate-like object such as a semiconductor wafer is not removed.

On the other hand, in the case of a semiconductor wafer handler molded product made of a conductive plastic using carbon fiber-containing poly-ether-ether-ketone material, a thin insulating film of poly- An ether / ether / ketone coating is formed.

FIG. 11 shows a principle diagram in the case of using this wafer handler molded product to eliminate static electricity from a plate-like object such as a charged semiconductor wafer.

As shown in FIG. 11, a semiconductor wafer handler molded product made of a conductive plastic using a poly-ether-ether-ether-ketone material containing carbon fiber is used. It is electrically connected to the earth ground terminal 3 through the carbon fiber layer formed inside the product.

In this basic circuit model, when the semiconductor wafer 1 is sucked by the wafer suction unit 2, a suction presence / absence switch 4 that opens / closes depending on the presence / absence of suction is formed. When the semiconductor wafer 1 is sucked by the wafer suction unit 2, the suction presence switch 4 is closed, and the contact resistance 5 is formed between the semiconductor wafer 1 and the wafer suction unit 2.

The carbon fiber layer formed inside the wafer handler molded product is electrically grounded to ground, and when the semiconductor wafer 1 is contact-supported and handled, the surface of the wafer handler molded product is treated with polyether ether. Since the ketone insulation film is formed,
A contact capacitor 6 is formed between the semiconductor wafer 1 and the carbon fiber layer via the ether / ketone insulating film.

The film thickness of the polyether ether ether ketone film formed on the surface of this wafer handler molded product is
The film thickness cannot be controlled due to the molding conditions of the mold.

As a result, when handling a plate-like object such as the semiconductor wafer 1, a contact resistance 5 (electrical grounding provided on the semiconductor wafer and the wafer handler carbon fiber layer) is generated between the semiconductor wafer 1 and the wafer handler which are in contact with each other. (The electrical resistance value between them) and the semiconductor wafer 1 and the poly-ether-ether-ketone insulating coating, the capacitance of the contact capacitor 6 formed between the carbon fiber layers fluctuates.

Further, the surface resistance value of the wafer suction portion 2 of the semiconductor wafer handler which comes into contact with the plate-like object such as the semiconductor wafer 1 is the surface resistance value of the poly-ether-ether-ketone coating itself, which is 10 ¹⁵ (Ω). / Sq.) To 10 ¹⁶ (Ω /
sq. ).

Further, since the molding is performed by molding, the surface roughness of the wafer adsorbing portion 2 of the wafer handler is rough, and particles are accumulated on the uneven portion of the surface, and when the semiconductor wafer 1 is handled, it enters the uneven portion. It has become clear that there arises a problem that particles are transferred and attached to the semiconductor wafer 1.

In addition, since the film thickness of the poly-ether-ether-ketone coating formed on the surface of the wafer handler molded product cannot be controlled, the wafer suction portion 2 that comes into contact with the semiconductor wafer 1 is processed to reduce the surface roughness. It was revealed that when the unevenness is reduced, the poly-ether-ether-ketone coating layer is broken and the carbon fiber is exposed.

As a result, it became clear that when handling a plate-like object such as the semiconductor wafer 1, the exposed carbon fibers were missing and adhered onto the semiconductor wafer 1 to act as particles.

Further, the carbon fiber itself contains M
When metal components such as g, Ca, Al and Fe are contained in the order of ppm and carbon fibers of this type adhere to the semiconductor wafer 1, movable metal ions or the like are generated when heat treatment is performed in a diffusion furnace or the like, It was revealed that the characteristics of the semiconductor device are deteriorated.

In addition, since the semiconductor wafer 1 and the carbon fiber layer are in direct contact with each other, the carbon fiber layer is passed through and electrically short-circuited directly to the ground terminal 3, so that the contact resistance 5 has a resistance value of 10 ^3. (Ω / sq.)-1
0 ⁵ (Ω / sq.) And the capacitance of the contact capacitor 6 is also reduced.

As a result, when the semiconductor wafer 1 charged to several KV is handled, the semiconductor wafer 1 is instantly discharged, the discharge current increases, and the semiconductor element is destroyed.

On the other hand, in the method of applying the conductive polymer, since the adhesion between the conductive polymer and the base is low, there is a concern that the coating film may be lifted up. To solve this concern, for example, undercoating or the like may be performed. There is a problem that it is necessary to add an extra step and the step becomes complicated.

Therefore, an object of the present invention is to hold an article such as a semiconductor wafer in a clean and highly pure state without contaminating an article such as a semiconductor wafer to be held with a metal component or the like. It is to provide an article handling technology capable of handling.

Further, another object of the present invention is to control the surface resistance value of the contact member within a predetermined range when holding an article such as a semiconductor wafer so that the discharge current value from the held article such as a semiconductor wafer is controlled. It is an object of the present invention to provide an article handling technique capable of controlling a predetermined range to prevent a problem such as destruction of a semiconductor element due to electrostatic damage generated when static electricity charged in an article such as a semiconductor wafer is discharged.

Still another object of the present invention is to provide an article handling member capable of realizing antistatic protection on an object to be contacted by a simple manufacturing process.

Still another object of the present invention is to provide a storage container which does not contaminate or damage a contacted object.

Still another object of the present invention is to provide a storage container capable of preventing electrostatic charge on a contacting object and preventing electrostatic breakdown due to gradual discharge from the charged object. .

Still another object of the present invention is to provide a storage container capable of realizing antistatic protection on an object to be contacted by a simple manufacturing process.

The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

[0032]

Of the inventions disclosed in the present application, a representative one will be briefly described below.
It is as follows.

That is, in the article handling member of the present invention, the surface of the base material having a desired shape is modified, and the surface of the base material is coated with a conductive polymer or a mixture of a conductive polymer and a curable resin. It will be.

The storage container of the present invention is formed by modifying the surface of a base material having a desired shape and coating the surface of the base material with a conductive polymer or a mixture of a conductive polymer and a curable resin. It is a thing.

Further, in the article handling apparatus of the present invention, the surface resistance value of the surface of a contact member for holding a plate-like object such as a semiconductor wafer or a container for storing a chemical solution or the like is set within a range in which gradual discharge is possible. A means for electrically controlling the surface of the contact member whose surface resistance value is controlled as well as grounding is provided. The surface resistance value is, for example, 10 ⁶ (Ω / s
q. ) To 10 ¹¹ (Ω / sq.).

Further, at least the surface material of the contact member for holding a plate-like object such as a semiconductor wafer is made of a conductive resin material containing no metal component, and has a surface resistance value of 10 ⁶ (Ω).
/ Sq. ) To 10 ¹¹ (Ω / sq.).

As the surface material of the contact member for holding a plate-like object such as a semiconductor wafer, a conductive resin material containing no metal component is used, and the surface resistance value is 10 ⁶ (Ω / sq.) To 10 ¹¹ (Ω).
/ Sq. The following means are conceivable as a method for controlling within the range.

(1) A molding material in which a conductive resin material containing no metal component is evenly dispersed in a base resin material is used, and a plate-like object such as a semiconductor wafer is held using this molding material. Mold the contact member.

(2) A molding material in which a conductive resin material containing no metal component and a photo-curing agent containing no metal component are evenly dispersed in a resin material as a base is prepared, and this molding material is used. A contact member that holds a plate-like object such as a semiconductor wafer is formed.

The molded contact member is irradiated with light in the wavelength band that cures the photo-curing agent used to make the contact member, and the contact member that holds a plate-like object such as a semiconductor wafer is cured.

(3) A molding material in which a conductive resin material containing no metal component and a photo-curing agent containing no metal component are evenly dispersed in a resin material serving as a base is prepared, and this molding material is used. A contact member that holds a plate-like object such as a semiconductor wafer is formed.

The molded contact member is irradiated with light in a wavelength band that cures the photo-curing agent used to make the contact member, and the contact member holding a plate-like object such as a semiconductor wafer is cured.

The surface of the hardened contact member for holding a plate-like object such as a semiconductor wafer is processed to have a surface roughness Ra of 0.2 (μm) or less.

(4) A contact member for holding a plate-like object such as a semiconductor wafer is coated with a coating material in which a conductive resin material containing no metal component is evenly dispersed using a photocuring agent containing no metal component. The surface of the base material is coated, and the coated film is irradiated with light in a wavelength band for curing the photo-curing agent, and the coated film is photo-cured.

(5) The base material surface of the contact member for holding a plate-like object such as a semiconductor wafer is modified by plasma treatment, and the modified base material surface is coated with a photo-curing agent containing no metal component. A conductive resin material that does not contain a metal component is evenly dispersed on the surface of the base material of the contact member that holds a plate-like object such as a semiconductor wafer, and the coated film is cured with a photo-curing agent. The coated film is photo-cured by irradiating light in the wavelength band.

(6) The base material surface of the contact member for holding a plate-like object such as a semiconductor wafer is processed to have a surface roughness Ra of 0.2 (μm) or less, and the processed base material surface of the contact member is processed. A coating material in which a conductive resin material containing no metal component is evenly dispersed using a photocuring agent containing no metal component is coated on the surface of the base material of the contact member that holds a plate-like object such as a semiconductor wafer. Then
The coated film is irradiated with light in the wavelength band for curing the photo-curing agent, and the coated film is photo-cured.

(7) Using a photocuring agent containing no metal component, a conductive resin material containing no metal component is uniformly dispersed on the surface of the base material of the contact member for holding a plate-like object such as a semiconductor wafer. The coating material is coated on the surface of the base material of the contact member that holds a plate-shaped object such as a semiconductor wafer, and the coated coating is photocured by irradiating it with light in a wavelength band for curing the photocuring agent. The surface of the photocured coating is processed to have a surface roughness Ra of 0.2 (μm) or less.

[0048]

According to the article handling member and storage container of the present invention described above, the surface of the base material is modified before coating the conductive polymer or the mixture of the conductive polymer and the curable resin. The adhesion between the material and the conductive polymer is improved.
Further, for the purpose of improving the adhesion, it is not necessary to perform an extra step such as undercoating, and the manufacturing process can be simplified.

According to the article handling apparatus for semiconductor wafers and the like of the present invention, the surface resistance value of the contact member for directly holding the plate-like object such as semiconductor wafer is 10 ⁶
(Ω / sq.) To 10 ¹¹ (Ω / sq.) Is controlled, and means for electrically grounding the surface of the controlled contact member is provided. By holding the article handling apparatus according to the present invention, it is always 10 ⁶ (Ω / sq.) To 10 ¹¹ (Ω / s).
q. ) Is connected to the electrical grounding part via the surface resistance value controlled in the range, the static electricity charged on the plate-like object such as a semiconductor wafer can be gradually discharged, and the discharge current causes the destruction of the semiconductor element. The discharge current value does not occur, and the electrostatic breakdown of the semiconductor element can be reliably prevented.

Further, in the present invention, the surface resistance value of the contact member itself for holding a plate-like object such as a semiconductor wafer is 10 ⁶ (Ω /
sq. ) To 10 ¹¹ (Ω / sq.), The contact member always holds a plate-like object such as a semiconductor wafer regardless of the thickness of the surface layer of the contact member holding a plate-like object such as a semiconductor wafer. Surface resistance value of 10 ⁶ (Ω / sq.)
It can be controlled to -10 ¹¹ (Ω / sq.).

Further, according to the present invention, the surface resistance value of the contact member for holding a plate-like object such as a semiconductor wafer is 10 ⁶ (Ω / s).
q. ) To 10 ¹¹ (Ω / sq.),
Since it is made of a conductive resin material that does not contain metal components, when holding a plate-like object such as a semiconductor wafer, it will be rubbed from the article handling device to a plate-like object such as a semiconductor wafer. Even if the contact member holding the
A foreign substance containing a metal component such as g, Ca, Al, or Fe is not attached, and the characteristics of the semiconductor element are not deteriorated by movable metal ions or the like.

As another means, in the present invention, the surface of the base material of the contact member for holding a plate-like object such as a semiconductor wafer is subjected to plasma treatment to expose the active surface, and a conductive resin material containing no metal component is used. Since it can be coated, the surface of various resin base materials can be coated with a conductive resin material containing no metal component, and the surface resistance value of a contact member that holds a plate-like object such as a semiconductor wafer is 10 ⁶ (Ω /Sq.)-10 ¹¹ (Ω / s
q. ) Can be controlled.

In the present invention, the surface of the base material that holds a plate-like object such as a semiconductor wafer is processed to have a surface roughness Ra of 0.2 (μm) or less, and the surface is made of a conductive material containing no metal component. The configured surface resistance value is 10 ⁶ (Ω / sq.) To 10 ¹¹ (Ω
/ Sq. ), The additional step of forming an undercoating film for the purpose of improving the difficulty of coating the undercoating film is unnecessary, and the surface resistance value of 10 can be obtained by a simple process.
The film thickness of the film controlled to ⁶ (Ω / sq.) To 10 ¹¹ (Ω / sq.) Can be controlled to a predetermined dimensional value.

Further, the surface resistance value is 10 ⁶ (Ω / s
q. ) To 10 ¹¹ (Ω / sq.) Can be formed with a desired film thickness, so that the surface of the contact member holding a plate-like object such as a semiconductor wafer has a surface roughness Ra of 0.2 (μm) or less. The surface of the contact member that holds a plate-like object such as a semiconductor wafer without exposing the surface of the base material of the holding means always has a surface resistance value of 10 ⁶ (Ω / sq.) To 10 ¹¹
It can be composed of a conductive resin material containing no metal component controlled to (Ω / sq.).

Examples of the conductive resin material containing no metal component used in the present invention include a coating material containing a conductive polymer and a resin binder. Examples of conductive polymers include polyaniline, polythiophene, and polypyrrole.

As a result, the unevenness of the surface of the contact member that holds the plate-like object such as the semiconductor wafer becomes small, so that the contact state between the surface of the contact member and the plate-like object such as the semiconductor wafer is improved, and the electrostatically charged semiconductor A plate-shaped object such as a wafer can be uniformly discharged to a contact member that holds a plate-shaped object such as a semiconductor wafer.

Further, when particles are accumulated on the irregularities on the surface of the contact member and the plate-like object such as a semiconductor wafer is handled, the particles that have entered the irregularity on the surface of the contact member are changed to the plate-like object such as a semiconductor wafer. Transfer adhesion is reduced.

Further, in the present invention, the surface of the contact member for holding a plate-like object such as a semiconductor wafer is cured with a photo-curing agent, so that the scratch resistance when the plate-like object such as a semiconductor wafer is held is improved. Therefore, when handling a plate-like object such as a semiconductor wafer, a part of the contact member will not be removed and will not adhere to the semiconductor wafer as particles.

An example of the results of evaluating the action and effect of the present invention will be described with reference to FIGS. 7 and 8. FIG. 7 shows FIG.
5 is a flowchart of a process of forming a conductive resin film on the substrate shown in FIG.

Specifically, a conductive resin film is formed on the substrate by the following steps.

(1) A substrate 7 having a plate thickness of 10 (mm) is manufactured by processing a poly-ether-ether-ketone material.
During this processing, the surface on which the conductive resin film 8 is formed is
Surface roughness Ra is processed to 0.2 (μm) or less (step 8)
01).

(2) The half surface of the substrate 7 which does not require the formation of the conductive resin film 8 is masked (step 802).

(3) A photocurable conductive resin coating 9 containing no metal component, for example, conductive polyaniline and a photocurable resin as main components is dip-coated on the side of the substrate 7 which is not masked (step). 803).

(4) The mask masked on the half surface of the substrate 7 is removed (step 804).

(5) The photocurable conductive resin coating material 9 containing no metal component is irradiated with light to be cured, and a conductive resin film 8 having a film thickness of 3 μm is formed on the substrate 7 as shown in FIG. (Step 805).

(6) The surface roughness Ra = 0.2 is obtained by lapping the surface of the conductive resin film 8 formed on the substrate 7 shown in FIG.
Processing is performed to (μm) or less (step 806).

(7) At the measurement points on the substrate 7 and the conductive resin film 8 shown in FIG. 8, the surface resistance value and the scratch resistance are evaluated (step 807).

[0068]

[Table 1]

Specifically, (i) the surface resistance value was measured by a surface resistance measuring instrument, and (ii) the scratch resistance was measured by a steel wool abrasion resistance tester;
The scratch condition was evaluated by reciprocating 100 times (kg / cm ² ).

The evaluation results thus evaluated are shown in Table 1. This, as shown in Table 1 results, the surface resistance value at the measurement point on the substrate ^{7, 10 12 (Ω / sq} .) Indicates, 10 ⁶ (Ω / sq at the measurement point on the conductive resin film 8. ) Got. The surface resistance value on the conductive resin film 8 is controlled to 10 ⁶ (Ω / sq.) To 10 ¹¹ (Ω / sq.) By controlling the distribution amount of the conductive resin material containing no metal component. I have confirmed that I can do it.

Next, another example of the function and effect of the present invention will be described with reference to FIGS. FIG. 9 shows a processing flow for forming a conductive resin film on the perfluoroalkoxy vinyl ether (PFA) plate shown in FIG.

Specifically, a conductive resin film is formed on the substrate by the following steps.

Before examining the processing flow shown in FIG. 9, a conductive resin paint containing no metal component is dip-coated in the processing flow for forming a conductive resin film on the substrate shown in FIG. 7 on the substrate. However, due to the difficulty of coating, a conductive resin paint containing no metal component could not be coated.

As a solution to this problem, the surface of the substrate is treated and activated before the dip coating of the photocurable conductive resin coating material 9 containing no metal component, so that the surface of the substrate to be treated does not contain the metal component. It was revealed that the curable conductive resin paint 9 can be dip coated.

As one means for activating the substrate surface, it has been clarified that the substrate surface can be subjected to plasma treatment by corona discharge to dip-coat the substrate with the photocurable conductive resin coating 9 containing no metal component. It was

The process of forming the conductive resin film on the substrate will be described with reference to FIG.

(1) Perfluoro / alkoxy / vinyl /
The ether material is processed to manufacture the substrate 10 having a plate thickness of 10 (mm). In this processing, the surface on which the conductive resin film 11 is formed is processed to have a surface roughness Ra of 0.2 (μm) or less (step 1001).

(2) The surface of the substrate 10 is subjected to plasma surface treatment by corona discharge (step 1002).

(3) The half surface of the substrate 10 on which the conductive resin film 11 is not formed is masked (step 1003).

(4) The photocurable conductive resin paint 9 containing no metal component is dip-coated on the unmasked substrate 10 side (step 1004).

(5) The mask masked on the half surface of the substrate 10 is removed (step 1005).

(6) The coating film is irradiated with light to be cured, and
As shown by 0, a conductive resin film 11 having a film thickness of 3 μm is formed on the substrate 10 (step 1006).

(7) The surface of the conductive resin film 11 formed on the substrate 10 shown in FIG. 10 is lapped and processed to have a surface roughness Ra of 0.2 (μm) or less (step 100).
7).

(8) At the measurement points on the substrate 10 and the conductive resin film 11 shown in FIG. 10, the surface resistance value and the scratch resistance are evaluated (step 1008).

Specifically, (i) the surface resistance value was measured by a surface resistance measuring instrument, and (ii) the scratch resistance was measured by a steel wool abrasion tester;
The state of scratches was evaluated by reciprocating 100 times (kg / cm ² ).

[0086]

[Table 2]

The evaluation results thus evaluated are shown in Table 2.
Shown in As the results show, the surface resistance value was 10 ¹⁴ (Ω / sq.) At the measurement point on the substrate 10 and 10 ⁶ (Ω / sq.) At the measurement point on the conductive resin film 11. Reached

The surface resistance value on the conductive resin film 11 is
1 according to the amount of conductive resin material that does not contain metal components
It has been confirmed that it is possible to control from 0 ⁶ (Ω / sq.) To 10 ¹¹ (Ω / sq.).

Next, the relationship between the surface resistance value and electrostatic breakdown will be examined in detail. With the progress of higher integration, higher speed, and lower power consumption of semiconductor devices, the miniaturization of element structures and the miniaturization of wiring are advanced, and semiconductor element destruction due to static electricity becomes apparent. This obstacle causes discharge when the charged object comes into contact with the semiconductor element, resulting in destruction of the semiconductor element.

There are two types of breakdown of semiconductor elements due to static electricity, "depending on voltage" and "depending on current." To prevent the breakdown of semiconductor elements due to static electricity, reduction of charging potential and electrostatic energy To reduce the discharge current value.

The charging potential (voltage) is dominant in the breakdown of the semiconductor element mainly due to the breakdown of the insulating film used in the semiconductor element structure. For example, MOS
The withstand voltage of the silicon oxide film used as the gate oxide film of the semiconductor device having the structure is 0.1 (V / Å). Table 3 shows the withstand voltage level against the electrostatic charge potential of a typical semiconductor element which is weak against static electricity.

[0092]

[Table 3]

On the other hand, as a phenomenon in which a semiconductor element is destroyed depending on a current, there is a disconnection failure of a circuit. This phenomenon is an obstacle that the discharge energy due to electrostatic charging is changed into Joule heat, holes are formed in the circuit, and metal components are melted and evaporated.

In a ULSI semiconductor device having a design rule of 0.3 μm using CMOS and bipolar technology, the allowable value of discharge energy due to electrostatic charging is set to 20 (μJ).

From such a background, the present inventors have developed a plate-shaped wafer holding means (contact area; about 2) having different surface resistance values.
cm ² ) and 1000V electrostatically charged φ5 inch Si
The maximum discharge energy of 10 (μ
The charging potential of the Si wafer after sec) was evaluated. The evaluation results are shown in Table 4.

[0096]

[Table 4]

From the results of Tables 3 and 4, in order to prevent the destruction of the semiconductor element due to the charged static electricity, the surface resistance value of the member contacting the semiconductor wafer is 10 ⁷ (Ω / s).
q. ) To 10 ⁸ (Ω / sq.) Is optimal.

However, in order to obtain a stable surface resistance value of a member in contact with a semiconductor wafer, the surface resistance value of 10 ⁶ (Ω / sq.) To 10 is imposed due to the restriction of the current conductive film manufacturing technology.
¹¹ (Ω / sq.) Is the economically commensurate control limit.

If economically permitted, for example, by adding a screening inspection means, the surface resistance value of the member contacting the semiconductor wafer can be reduced to 10 ⁷ (Ω / sq.).
It is possible to control to -10 ⁸ (Ω / sq.).
That is, the surface resistance value is 10 ⁷ (Ω / sq.) To 10 ⁸
It is more desirable to control to (Ω / sq.).

On the other hand, the surface roughness of the contact member will be examined in detail. When the plate-shaped object is held by the holding means for holding the plate-shaped object such as a semiconductor wafer, the number and size of particles transferred and attached from the holding means to the plate-shaped object are determined by the surface roughness of the contact member surface. To be done. Specifically, the size of particles that enter the irregularities on the surface of the contact member that holds the plate-like object is determined by the surface roughness of the surface of the contact member.

Ideally, it is necessary to minimize the contact area between the surface of the contact member and the plate, and also to minimize the surface roughness of the surface of the contact member that contacts the plate. As a means for minimizing the surface roughness of the contact member that comes into contact with the plate-like object, it is necessary to subject the surface of the contact member to precision surface processing such as buffing. It is generally known that the higher the hardness of the processed surface of the object to be polished, the smaller the surface roughness.

In order to minimize the surface roughness by subjecting the surface of the resin material to precision surface processing such as buffing, it is necessary to set the hardness of the processed surface to H level or higher in terms of pencil hardness.

As illustrated in Table 5, the vinyl chloride surface does not contain a metal component used in the present invention,
For example, by coating a photocurable conductive resin material and photocuring it, the surface hardness is B to H to 2H in pencil hardness.
It can be improved to some extent.

Furthermore, when the above-mentioned photocurable conductive resin material used in the present invention was photocured with a pencil hardness of about H to 2H and then buffed, a photocurable type resin coated on vinyl chloride was obtained. As for the surface roughness of the coating film of the conductive resin material, it was expected that the center line average surface roughness Ra = 0.2 (μm) or less could be achieved.

Further, it can be easily estimated that the surface hardness of the conductive resin material containing no metal component can be increased to 2H or more in pencil hardness by optimizing the compounding ratio of the conductive component and the curing material.

On the other hand, the surface roughness considered in the present invention is the result of evaluation using the current buffing technique,
It can be easily estimated that the surface roughness of the center line average surface roughness Ra = 0.1 (μm) or less, which is equivalent to that of metal materials, can be realized with the development of processing technology.

[0107]

[Table 5]

[0108]

Embodiments of the present invention will now be described in detail with reference to the drawings.

(Embodiment 1) FIG. 1 is a sectional view showing an example of an article handling apparatus according to an embodiment of the present invention, and FIG.
It is a flow chart which shows an example of the manufacturing process. In this embodiment, as an example of the article handling apparatus, a case where the article handling apparatus is applied to a conductive spin chuck used in a photoresist coating processing apparatus will be described.

First, the structure of the conductive spin chuck will be described with reference to FIG.

The conductive vacuum adsorption spin head 21 for adsorbing the semiconductor wafer 20 has, for example, a base material 22 made of poly-ether-ether-ketone material and a surface resistance value of 10
^The conductive resin film 23 controlled to ⁶ (Ω / sq.) To 10 ¹¹ (Ω / sq.) Is formed. If there is no economic constraint such as yield in the manufacturing process of the conductive resin film 23, the surface resistance value of the conductive resin film 23 is 10 ⁷ (Ω / sq.) To 10 ⁸ (as described above). Ω / s
q. ) Is more desirable.

When forming the conductive resin film 23, the base material 22 is modified in advance by, for example, corona discharge treatment, plasma treatment, radiation irradiation treatment, electromagnetic wave irradiation treatment, etc. to make it easy to apply. After that, a method of coating a desired resin or the like can be used.

The conductive vacuum adsorption spin head 21 is
It is electrically connected to a conductive motor shaft 24 of a motor (not shown) through a conductive resin film 23.

The motor shaft 24 is connected to the earth ground terminal 25.
Is electrically connected to. The conductive vacuum suction spin head 21 and the motor shaft 24 are provided with a vacuum exhaust hollow hole 26, and the vacuum exhaust 27 is performed by a vacuum exhaust device (not shown).

A wafer suction surface 28 for sucking the semiconductor wafer 20 is provided with a wafer suction groove 28a, and a vacuum exhaust port 29 is provided at the bottom of the wafer suction groove 28a.
The conductive resin coating 23 is formed on the entire surface of the conductive vacuum suction spin head 21 including the wafer suction surface 28 and the wafer suction groove 28a.

A dripping nozzle 51 is hung above the center of the conductive vacuum adsorption spin head 21, and the base end of the dripping nozzle 51 is connected to a sealed chemical solution container 60 (storage container). It is submerged below the liquid surface of the photoresist liquid 70 stored inside the chemical liquid container 60. Chemical solution container 6
A pressurizing pipe 52 is connected to 0, and pressurizes the liquid surface of the photoresist liquid 70, thereby pumping the photoresist liquid 70 to the tip portion of the dropping nozzle 51.

In this case, the chemical solution container 60 has a base material 61 made of, for example, polypropylene, perfluoroalkoxy vinyl ether, polytrifluoroethylene, etc.
For example, a conductive resin coating 62 obtained by applying a conductive resin and hardening after being modified by corona discharge treatment, plasma treatment, radiation irradiation treatment, electromagnetic wave irradiation treatment, etc. is formed on the entire surface. The conductive resin coating 62 is grounded via the ground terminal 63.

The dropping nozzle 51 and the pressurizing pipe 52 are also provided.
Is a structure in which the surface of a base material made of perfluoroalkoxy vinyl ether is covered with a conductive resin film 53 obtained by applying and curing a photocurable conductive coating material containing no metal component. ing.

As a method of forming the conductive resin coating 62 and the conductive resin coating 53, the resin itself of the material may be a resin having conductivity, or, for example, A
By introducing a Lewis acid such as sF ₃ or BF ₃ or a halogen molecule such as I ₂ or Br ₂ into the coating at a desired concentration by a method such as ion implantation or vapor phase diffusion, the conductive resin coating 62 The surface resistance value may be controlled to a desired value.

As a result, the photoresist liquid 70 supplied to the semiconductor wafer 20 from the chemical liquid container 60 through the dropping nozzle 51 is prevented from being charged, and electrostatic breakdown of the semiconductor element on the semiconductor wafer 20 is prevented, and at the same time, the chemical liquid container. 6
0, prevention of adhesion of particles due to charging of the surface of the dropping nozzle 51 and the pressurizing pipe 52, and further, the chemical liquid container 6
The malfunction of a control device (not shown) that controls the supply of the photoresist liquid 70 from 0 to the semiconductor wafer 20 is prevented.

An outline of a method of manufacturing the conductive spin chuck of this embodiment illustrated in FIG. 1 will be described with reference to the flowchart of FIG.

This manufacturing method is a method of imitating the shape by an injection molding method using a molding die, and is manufactured by the following steps.

(1) In order to mold the base material 22 shown in FIG. 1, a molding tablet made of, for example, poly-ether-ether-ketone is supplied to the injection molding device (step 201).

(2) The base material 22 shown in FIG. 1 is molded with an injection mold (step 202).

(3) A portion not requiring the conductive resin coating 23 shown in FIG.
For example, a photo-curable conductive resin paint containing conductive polyaniline and a photo-curable resin as main components is dip-coated. After dip coating, the masking is removed (step 203).

(4) Conductive resin coating 23 shown in FIG. 1 in which a photocurable conductive resin coating containing no metal component is dipped.
The dip coating film corresponding to is irradiated with light to cure the dip coating film (step 204).

(5) The conductive resin film 23 on the wafer suction surface 28 shown in FIG.
Is processed to have a surface roughness Ra of 0.2 μm or less (step 205).

The conductive vacuum adsorption spin head 21 is manufactured by the above manufacturing process.

In the case of a photo-curable conductive resin coating material containing no metal component, the higher the amount of the component for increasing the conductivity, the lower the hardness after curing by light irradiation, the surface resistance value is 10 ⁶ (Ω / sq.)-10 ¹¹ (Ω / s
q. ) (Desirably 10 ⁷ (Ω / sq.) To 10 ⁸ (Ω
/ Sq. It is conceivable that sufficient hardness for controlling the surface roughness to Ra = 0.2 μm or less cannot be obtained by controlling the surface roughness to Ra) of 0.2 μm or less.

In this case, in this embodiment, as illustrated in the flow chart of FIG. 12, in the photo-curable conductive resin coating material containing no metal component, the amount of the component for enhancing the conductivity is suppressed and the amount of the component after curing is reduced. A surface resistance value of 10 ⁶ (Ω / sq.) To 10 ^{11 is obtained} by ensuring a required hardness, repeating coating and curing, and increasing the film thickness of the conductive resin film 23.
(Ω / sq.) (Desirably 10 ⁷ (Ω / sq.) To 1
It is controlled to 0 ⁸ (Ω / sq.)).

Next, a method of removing the electric charge charged on the semiconductor wafer 20 by using the conductive vacuum adsorption spin head 21 will be described with reference to FIG.

As a concrete example, an example in which the conductive vacuum adsorption spin head 21 shown in FIG. 1 is used in a photoresist coating apparatus will be described.

When the semiconductor wafer 20 is vacuum-sucked on the wafer suction surface 28 of the conductive vacuum suction spin head 21, it is rotated at a predetermined rotation speed by a motor (not shown).

During the rotation, the photoresist liquid 70 composed of an organic substance is discharged from the dropping nozzle 51 to the semiconductor wafer 2
0 drops.

When the photoresist liquid 70 is dropped onto the semiconductor wafer 20, the semiconductor wafer 20 vacuum-sucked by the conductive vacuum suction spin head 21 is rotated at a predetermined high-speed rotation by a motor, and the semiconductor wafer 20 is transferred onto the semiconductor wafer 20. Forming a photoresist film.

In this processing step, the semiconductor wafer 20 is always
Has a surface resistance of 10 ⁶ (Ω / s
q. ) To 10 ¹¹ (Ω / sq.), The motor shaft 24 is electrically connected to the earth ground terminal 25 through the conductive resin film 23. Semiconductor wafer 2
Since 0 is vacuum-sucked and the contacting wafer suction surface 28 is processed to have a surface roughness of Ra = 0.2 μm or less, the electrical contact resistance value between the semiconductor wafer 20 and the wafer suction surface 28 is constant. are doing.

Thus, the semiconductor wafer 2 which is an insulator
0 rotates, and the semiconductor wafer 20
Even if charged, the surface resistance value is 10 ⁶ (Ω / sq.) To 1
Since discharge is performed through the conductive resin film 23 controlled to 0 ¹¹ (Ω / sq.), Even if the semiconductor wafer 20 is charged to several KV, the discharge current is controlled to several hundred mA and the earth ground terminal. The discharge potential can be gradually reduced to 25, and the charge potential of the semiconductor wafer 20 can be controlled to around 100V.

(Embodiment 2) FIG. 3 is a sectional view showing an example of the structure of an article handling apparatus according to another embodiment of the present invention.
FIG. 4 is an enlarged cross-sectional view showing a part thereof, FIG. 5 is a plan view thereof, and FIG. 6 is a flowchart showing an example of the manufacturing process thereof. In the case of the present embodiment, a case where the present invention is applied to a conductive wafer handler will be described as an example of an article handling apparatus.

The construction of the conductive wafer handler of this embodiment will be described with reference to FIGS. 3, 4 and 5. As shown in FIG. 3, the semiconductor wafer 40 has a conductive wafer handler unit 4
Held by 1. The conductive wafer handler unit 41 is
The semiconductor wafer 40 is provided with a supporting pin portion 42 that projects from the mounting surface of the semiconductor wafer 40 and a guide portion 43 that guides the semiconductor wafer 40.

As shown in FIG. 5, the support pin portion 42 supports the semiconductor wafer 40 by three-point support, and the guide portion 43 has an arc shape, and the semiconductor wafer 40 is dropped into the support pin portion 42. It is configured to guide you at times.

As shown in FIG. 4, in the conductive wafer handler portion 41, a coat film 45 made of, for example, perfluoroalkoxy vinyl ether copolymer is formed on a base material 44 made of a conductor such as aluminum, and the coat film 45 is formed. In addition, the surface resistance value is 10 ⁶ (Ω / sq.) To 10 ¹¹ (Ω /
sq. ) Controlled conductive resin film 46 is formed. As described above, if economically permitted, the surface resistance value is 10 ⁷ (Ω / sq.) To 10 ⁸ (Ω / s).
q. ) Is more desirable.

The conductive wafer handler portion 41 is mechanically connected to the drive link 48 and the drive motor 49 via conductive mounting bolts 47, and is also electrically connected to the drive link 48 and the drive motor 49 via a ground terminal 49a. Electrically grounded.

Next, a schematic process for manufacturing the conductive wafer handler portion 41 of this embodiment will be described with reference to the flowchart of FIG.

(1) The base material 44 is machined into a handler shape (step 701).

(2) Base material 4 machined into a handler shape
4 is coated with a perfluoro / alkoxy / vinyl / ether resin material to form a coat film 45 (step 702).

(3) Perfluoro / alkoxy / vinyl /
Plasma surface treatment by corona discharge is applied to the coat film 45 coated with the ether resin material to activate the coat film 45 (step 703).

(4) The coating film 45 activated by the plasma surface treatment is dip-coated with a conductive polyaniline powder containing no metal component and a photo-curable conductive resin paint containing a polyfunctional acrylate as a main component to obtain a surface resistance. Value 1
The conductive resin film 46 of 0 ⁶ (Ω / sq.) To 10 ¹¹ (Ω / sq.) Is formed (step 704).

(5) The conductive resin coating 46, which is dip-coated with the photocurable conductive resin coating, is irradiated with light having a wavelength for photocuring the photocurable conductive resin coating to cure the conductive resin coating 46. (Step 705).

(6) Photocuring, conductive resin coating 46
The support pin portion 42 and the guide portion 43, which come into contact with the semiconductor wafer 40, are lapped to have a surface roughness Ra = 0.2.
Processing is performed so that the thickness is less than or equal to μm (step 706).

Next, the operation of handling the semiconductor wafer 40 by the conductive wafer handler section 41 of this embodiment will be described.

The drive motor 49 is driven to drive the drive link 4
The conductive wafer handler portion 41 is moved to the position of the semiconductor wafer 40 via the connector 8, and the semiconductor wafer 40 is dropped onto the support pin portion 42 using the guide portion 43 as a guide.

When the semiconductor wafer 40 is charged,
Surface resistance of 10 ⁶ (Ω / sq.) To 10 ¹¹ (Ω / s)
q. ) Is electrically grounded through the conductive resin film 46 controlled by the above method. The electric potential charged on the semiconductor wafer 40 has a surface resistance value of 10 ⁶ (Ω / sq.) To 10 ¹¹ (Ω
/ Sq. ) Is gradually discharged through the conductive resin film 46 controlled to), so that the discharge current is controlled to hundreds of tens (mA) and discharge is performed. Therefore, it is possible to avoid electrostatic breakdown of the semiconductor element formed on the semiconductor wafer 40 due to a large current flowing through the semiconductor wafer 40 due to the rapid discharge.

Further, since the support pin portion 42 and the guide portion 43 which are in contact with the semiconductor wafer 40 are removed from the charge, the adhesion of particles is prevented, and the area is lapped so that the surface roughness Ra = 0. Since it is processed to have a thickness of 0.2 μm or less, particles are not accumulated, and foreign matter is reliably prevented from adhering to the semiconductor wafer 40. As a result, it is possible to prevent a decrease in the yield of semiconductor elements on the semiconductor wafer 20 due to the adhesion of foreign matter.

(Embodiment 3) FIG. 13 is a perspective view showing an example of the structure of a storage container according to an embodiment of the present invention.
4 is a sectional view of a part thereof.

In this embodiment, as an example of the storage container, a case of applying to a wafer cassette used in a semiconductor device manufacturing process will be described.

The wafer cassette of this embodiment is, for example,
A base material 110B made of polyethylene is molded into a shape illustrated in FIG. 13 by a processing method such as injection molding, extrusion molding, and cutting molding, and the polyethylene wafer cassette 11 is formed.
0 (hereinafter, simply referred to as the cassette 110). That is, the cassette 110 is provided with a plurality of guide protrusions 111 facing each other at desired intervals on the inner peripheral surface of the side wall thereof, and the wafer 1100 is provided in the holding groove 112 having a predetermined width between the adjacent guide protrusions 111. It has a structure in which it is held by inserting the outer peripheral portion thereof. A bottom plate 113 is provided on the bottom surface of the cassette 110, and the wafer 1100 abuts on the bottom plate 113 by its own weight and is stored. Further, a draining hole 114 is opened in the center of the bottom plate 113.

In this case, the coating 110A is formed on the surface of the cassette 110 of this embodiment by the following method so as to have a predetermined thickness.

That is, first, corona discharge treatment (treatment condition: 20 kV, 30 minutes) is applied to the surface of the base material 110B.

After that, a photocurable conductive resin coating material containing 5 wt% of conductive polyaniline was set on the base material 110B at a pulling rate of 10 (cm / min) and applied by a dip coating method, and then at room temperature. After being naturally dried for 1 hour, the coating 110A was formed by irradiating with ultraviolet light (wavelength: 254 nm) for 3 hours to form a coating 110A, thereby forming a cassette 110. The thickness of this coating 110A is 30μ
m, and the surface resistance value was 10 ⁷ Ω.

As a result of such processing, the surface of the cassette 110 of the present embodiment has a wafer 1100 as shown in FIG.
Coating 110A on the surface in contact with the base material 110B inside
It has a two-layer structure. In order to evaluate the discharge characteristic of static electricity to this cassette 110, static electricity of 7 kV was applied and charged, and then the time until the voltage was attenuated to 50 V by contact with the ground electrode was measured and it was 3 seconds. there were. That is, according to the cassette 110 of this embodiment,
When the wafer 1100 charged with a high voltage is loaded, the electric charge of the wafer 1100 can be gradually discharged, and electrostatic breakdown of a semiconductor device structure (not shown) formed on the wafer 1100 can be prevented.

The cassette 110 of this embodiment and a cassette of the same material which is not subjected to static electricity countermeasures have a dust concentration of 0.5 μm.
After left in the atmosphere of 500 (pieces / m ³ ) for 1 hour, the particles adhering to the surface of the cassette 110 were measured and found to be 0 (pieces / cm ² ). The number of particles adhering was smaller than that of 50 (particles / cm ² ), and the effect of suppressing particle adhesion was confirmed by the cassette 110 of this embodiment in which the conductive coating 110A was formed as a countermeasure against static electricity.

Since the conductive polymer is applied to the surface of the base material 110B by the dip coating method, the conductive coating 110A can be easily formed on the entire surface of the cassette 110 having a complicated shape.

Further, in the case of the present embodiment, the corona discharge treatment is applied to the surface of the base material 110B prior to the application of the conductive polymer to change the surface to the easy application property. The conductive polymer can be applied to 110B with good adhesion. Further, for the purpose of improving the difficulty of coating the surface of the base material 110B, an extra step such as undercoating is unnecessary, and the steps are simplified.

(Example 4) In the case of Example 4, a base material 120B made of a perfluoroalkoxy vinyl ether copolymer was used, and a product made of a perfluoroalkoxy vinyl ether copolymer having a shape as illustrated in FIG. 13 was used. A cassette 120 (hereinafter simply referred to as a cassette 120) is manufactured,
The coating 120A is formed as follows.

That is, 5 wt% of conductive polyaniline was used.
The photocurable conductive coating material containing the base material 120B, which was previously subjected to corona discharge treatment (treatment condition: 20 kV, 30 minutes), was set to a pulling rate of 5 (cm / min) and applied by a dip coating method. After that, it was naturally dried at room temperature for 1 hour, and then irradiated with ultraviolet light (wavelength: 254 nm) for 3 hours to be cured to form a coating 120A, which was used as a cassette 120. The thickness of this coating 120A is 40μ.
m, and the surface resistance value was 10 ⁷ Ω / sq.

In order to evaluate the discharge characteristic of static electricity, 10 kV of static electricity was applied to this cassette 120,
After charging, the time taken until the voltage was attenuated to 100 V by contacting the ground electrode was 2 seconds. That is, according to the cassette 120 of this embodiment, when the wafer 1100 charged with high voltage is loaded, the wafer 110
It is possible to gradually discharge the electric charge of 0, and it is possible to prevent electrostatic breakdown of the semiconductor element structure (not shown) formed on the wafer 1100.

25 pieces of silicon wafers having a diameter of 125 mm were loaded in the cassette 120 of the present embodiment and the cassette 120 of the same material as that against which static electricity was not taken, and the dust concentration was set.
After leaving for 1 hour in an atmosphere of 0.5 μm or more and 50 (pieces / m ³ ), the particles adhering to the wafer surface were measured using a face plate inspection device. The number of wafers manufactured was 2 (pieces / wf), and the number of wafers loaded in a cassette that had not been subjected to static electricity measures was 20 (pieces / wf). The present embodiment has taken a countermeasure against static electricity by forming a conductive coating 120A. The effect of suppressing particle adhesion to the wafer surface by using the example cassette 120 was confirmed.

Further, in the case of the present embodiment, the corona discharge treatment is applied to the surface of the base material 120B prior to the application of the conductive polymer to change the surface to the easy application property. The conductive polymer can be applied to 120B with good adhesion. Further, for the purpose of improving the difficulty of coating the surface of the base material 120B, an extra step such as undercoating is unnecessary, and the steps are simplified.

The method of making the base material 120B having a hard coating property easy to coat is not limited to the corona discharge treatment described above, but oxygen plasma or nitrogen plasma treatment may be performed, for example.

(Embodiment 5) In the case of Embodiment 5, a base material 130B made of polyetheretherketone resin is used to form a cassette 130 made of polyetheretherketone resin having a shape as shown in FIG. , Simply referred to as cassette 130), and coated 13 as follows.
0A is formed.

That is, first, corona discharge treatment (treatment condition: 20 kV, 30 minutes) is applied to the surface of the base material 130B.

Thereafter, a thermosetting conductive paint containing 7 wt% of conductive polyaniline was applied to the base material 130B at a pulling rate of 2 (cm / min) by the dip coating method, and then at room temperature. After air-drying for 1 hour, heat treatment in a circulating hot air dryer (treatment condition: 120
C., 2 hours) and cured to coat 130A
Was formed. The coating 130A had a thickness of 60 μm and a surface resistance value of 10 ⁸ Ω.

With respect to the cassette 130 of this embodiment,
To evaluate the discharge characteristics of static electricity, static electricity of 20 kV was applied and charged, and then the ground electrode was contacted and the voltage was set to 1
When the time to decay to 00 V was measured, it was 4 seconds. That is, according to the cassette 130 of the present embodiment, when the wafer 1100 charged with a high voltage is loaded, the electric charge of the wafer 1100 can be gradually discharged, and the semiconductor element (not shown) formed on the wafer 1100 is shown. The electrostatic breakdown of the structure can be prevented.

Twenty-five silicon wafers having a diameter of 125 mm were loaded in the cassette 130 of the present embodiment and a cassette of the same material as that against static electricity, and the dust concentration was 0.5 μm or more 20
After being left in an atmosphere of 0 (pieces / m ³ ) for 1 hour, particles adhering to the wafer surface were measured using a face plate inspection device, and as a mean value, they were loaded in the cassette 130 of this embodiment in which countermeasures against static electricity were taken. 1 (piece / w
f), which is 10 (pieces / wf) for a wafer loaded in a cassette that has not been subjected to static electricity measures, and the cassette 130 of this embodiment in which the coating 130A is formed as a countermeasure against static electricity.
It was confirmed that the effect of suppressing particle adhesion on the wafer surface by using

Further, in the case of the present embodiment, the corona discharge treatment is applied to the surface of the base material 130B prior to the application of the conductive polymer to change the surface to the easy application property. The conductive polymer can be applied to 130B with good adhesion. Further, for the purpose of improving the difficulty of coating the surface of the base material 130B, an extra step such as undercoating is unnecessary, and the steps are simplified.

Example 6 In the case of Example 6, as shown in FIG. 13, a base material 140B made of aluminum whose surface is coated with a polyphenylene sulfide resin and which is subjected to a stain-proofing treatment with aluminum is used. An aluminum cassette 140 (hereinafter, simply referred to as a cassette 140) having a different shape is manufactured, and the coating 140 is performed as follows.
A is formed.

That is, first, corona discharge treatment (treatment condition: 20 kV, 30 minutes) is applied to the surface of the base material 140B.

After that, a thermosetting conductive coating material containing 6 wt% of conductive polyaniline was applied to the base material 140B at a pulling rate of 2 (cm / min) by a dip coating method, and then at room temperature. After air-drying for 1 hour, heat treatment in a circulating hot air dryer (treatment condition: 120
C., 2 hours), and then coating 1 by curing the coating film
40A was formed. The thickness of this coating 140A is 60μ
m, and the surface resistance value was 10 ⁸ Ω.

In order to evaluate the discharge characteristic of static electricity to this cassette 140, static electricity of 5 kV was applied and charged, and then the ground electrode was contacted to measure the time until the voltage decays to 100 V. It was 0.5 seconds. That is, according to the cassette 140 of this embodiment, when the wafer 1100 charged with high voltage is loaded, the wafer 1100
It becomes possible to gradually discharge the electric charge of the wafer 1
It is possible to prevent electrostatic breakdown of a semiconductor element structure (not shown) formed in 100.

Twenty-five silicon wafers having a diameter of 125 mm were loaded in the cassette 140 of the present embodiment and a cassette of the same material as that against static electricity, and the dust concentration was 0.5 μm or more.
After being left for 1 hour in an atmosphere of 0 (pieces / m ³ ), the particles adhering to the wafer surface were measured using a face plate inspection device, and as an average value, they were loaded into the cassette 140 of this embodiment against static electricity. 1 (piece / w for wafer)
f), which is 10 (pieces / wf) for the wafer loaded in the cassette that does not take measures against static electricity, and the effect of suppressing particle adhesion to the wafer surface by measures against static electricity was confirmed.

Further, in the case of the present embodiment, the corona discharge treatment is applied to the surface of the base material 140B prior to the application of the conductive polymer to change the surface to the easy application property. The conductive polymer can be applied to 140B with good adhesion. Further, for the purpose of improving the difficulty of coating the surface of the base material 140B, an extra step such as undercoating is not necessary, and the steps are simplified.

(Embodiment 7) In the case of Embodiment 7, a base material 150B made of a polyethersulfone resin is used to form a cassette 150 made of a polyethersulfone resin having a shape as illustrated in FIG. A cassette 150) is manufactured and a coating 150A is formed as follows.

That is, first, corona discharge treatment (treatment condition: 20 kV, 30 minutes) is applied to the surface of the base material 150B.

After that, an X-ray curable conductive coating material containing 6 wt% of conductive polyaniline was applied to the base material 150B at a pulling rate of 2 (cm / min) and applied by the dip coating method. After air-drying for 1 hour at room temperature, X-rays with a wavelength of 0.1 nm (energy, about 10 kev)
Was irradiated for 20 seconds to cure the coating film to form coating 150A. The coating 150A had a thickness of 30 μm and a surface resistance value of 10 ⁸ Ω / sq.

To this cassette 150, in order to evaluate the discharge characteristics of static electricity, 10 kV static electricity was applied,
After charging, the ground electrode was contacted and the time until the voltage was attenuated to 100 V was measured and found to be 5 seconds. That is, according to the cassette 150 of this embodiment, when the wafer 1100 charged with high voltage is loaded, the wafer 1100
It becomes possible to gradually discharge the electric charge of the wafer 1
It is possible to prevent electrostatic breakdown of a semiconductor element structure (not shown) formed in 100.

Twenty-five silicon wafers with a diameter of 125 mm were loaded in the cassette 150 of the present embodiment and a cassette of the same material as that against which static electricity was not taken, and the dust concentration was 0.5 μm or more.
After leaving for 1 hour in an atmosphere of 0 (pieces / m ³ ), particles adhering to the wafer surface were measured using a face plate inspection device, and as a mean value, a coating 150 A was formed to prevent static electricity. The number of wafers loaded in the example cassette 150 is 3 (pieces / wf), and the number of wafers loaded in a cassette that does not have a static electricity countermeasure is 20 (pieces / wf).
wf), and the effect of suppressing particle adhesion to the wafer surface by the countermeasure against static electricity was confirmed.

Further, a rubbing test was carried out on this coating 150A using steel wool, but no scratches were visually observed and scratch resistance was confirmed.

Further, in the case of the present embodiment, the corona discharge treatment is applied to the surface of the base material 150B prior to the application of the conductive polymer to change the surface to the easy application property. The conductive polymer can be applied to 150B with good adhesion. Further, for the purpose of improving the difficulty of coating the surface of the base material 150B, an extra step such as undercoating is not necessary, and the steps are simplified.

(Embodiment 8) In the case of this embodiment 8, a base material 170B made of polyetheretherketone resin is used to form a polytetrafluoroethylene cassette 170 (hereinafter referred to as a cassette) having a shape as illustrated in FIG. (Hereinafter simply referred to as the cassette 170), and the coating 170A is formed as follows.

That is, first, electromagnetic wave processing (processing condition: frequency = 2.45 GHz, output = 10 W, processing time = 30 minutes)
Is applied to the surface of the base material 170B made of polytetrafluoroethylene.

Then, a photocurable conductive coating material containing 3 wt% of conductive polyaniline was applied to the base material 170B at a pulling rate of 5 (cm / min) by a dip coating method, and then at room temperature. After being naturally dried for 1 hour, the coating 170A was formed by irradiating with ultraviolet light (wavelength: 365 nm) for 2 hours and curing. This coating 170A has a thickness of 30 μm and a surface resistance value of 10 ⁹ Ω / s.
It was q.

With respect to the cassette 170 of this embodiment,
In order to evaluate the discharge characteristics of static electricity, a static electricity of 15 kV was applied and charged, and then the ground electrode was contacted and the voltage was 5
When the time to decay to 0 V was measured, it was 10 seconds. That is, according to the cassette 170 of the present embodiment, when the wafer 1100 charged with a high voltage is loaded, the electric charge of the wafer 1100 can be gradually discharged, and the semiconductor element (not shown) formed on the wafer 1100. The electrostatic breakdown of the structure can be prevented.

Twenty-five silicon wafers having a diameter of 125 mm were loaded in the cassette 170 of this embodiment and a cassette of the same material as that against static electricity, and the dust concentration was 0.5 μm or more.
After being left in an atmosphere of 0 (pieces / m ³ ) for 1 hour, particles adhering to the wafer surface were measured using a face plate inspection device. 3 (pieces / w
f), 25 (pieces / wf) for a wafer loaded in a cassette that has not been subjected to static electricity measures, and the cassette 170 of this embodiment in which the coating 170A is formed as a countermeasure against static electricity.
It was confirmed that the effect of suppressing particle adhesion on the wafer surface by using

Further, in the case of the present embodiment, the electromagnetic wave treatment is applied to the surface of the base material 170B prior to the application of the conductive polymer, so that the surface is changed to the easily applied property.
The conductive polymer can be applied to the base material 170B with good adhesion. Further, for the purpose of improving the difficulty of coating the surface of the base material 170B, an extra step such as undercoating is unnecessary, and the steps are simplified.

(Example 9) In the case of this Example 9, a base material 180B made of a perfluoroalkoxy vinyl ether copolymer was used to produce a perfluoroalkoxy vinyl ether copolymer having a shape as illustrated in FIG. A cassette 180 (hereinafter simply referred to as a cassette 180) is manufactured,
The coating 180A is formed as follows.

That is, first, radiation processing (processing condition: wavelength = 0.1 nm, energy = about 10 keV, processing time =
60 seconds) is applied to the surface of the base material 180B.

Thereafter, a thermosetting coating material containing 3 wt% of conductive polyaniline was applied to the base material 180B at a pulling rate of 10 (cm / min) by a dip coating method, and then at 40 ° C. After being dried in a circulating warm air dryer for 30 minutes, it was irradiated with ultraviolet light (wavelength: 254 nm) for 2 hours and cured to form a coating 180A. The coating 180A had a thickness of 20 μm and a surface resistance value of 10 ¹⁰ Ω / sq.

With respect to the cassette 180 of this embodiment,
In order to evaluate the discharge characteristics of static electricity, 10 kV of static electricity was applied and charged, and then the ground electrode was contacted and the voltage was 5
When the time to decay to 0 V was measured, it was 30 seconds. That is, according to the cassette 180 of the present embodiment, when the wafer 1100 charged with a high voltage is loaded, the electric charge of the wafer 1100 can be gradually discharged, and a semiconductor element (not shown) formed on the wafer 1100. The electrostatic breakdown of the structure can be prevented.

Twenty-five silicon wafers each having a diameter of 125 mm were loaded into the cassette 180 of this embodiment and a cassette of the same material as that against static electricity, and the dust concentration was 0.5 μm or more.
After being left in an atmosphere of 00 (pieces / m ³ ) for 1 hour, the particles adhering to the wafer surface were measured using a face plate inspection device, and the average value was loaded into the cassette 180 of this embodiment in which countermeasures against static electricity were taken. The number of wafers is 10 (pieces / wf), and the number of wafers loaded in a cassette that has not been subjected to static electricity measures is 60 (pieces / wf).
It was confirmed that 80 was used to suppress the particle adhesion to the wafer surface.

Further, in the case of this embodiment, the surface of the base material 180B is subjected to a radiation treatment prior to the application of the conductive polymer, so that the surface is changed to the easily applied property.
The conductive polymer can be applied to the base material 180B with good adhesion. Further, for the purpose of improving the difficulty of coating the surface of the base material 180B, an extra step such as undercoating is not necessary, and the steps are simplified.

(Embodiment 10) FIG. 15 is a perspective view showing an example of the structure of a storage container according to Embodiment 10 of the present invention.
FIG. 16 is a sectional view thereof.

In the case of the tenth embodiment, a base material 160B made of a desired resin is used to form a cassette case 160 as shown in FIG.
0) is formed and a conductive coating 160A is formed.

The cassette case 160 of this embodiment is composed of a cup-shaped main body 161 composed of a base material 160B and a base material 160B similarly, and a cap-shaped lid fitted into the main body 161 to form a sealed space inside. It is composed of a body 162. On the upper surface of the lid 162, for example, a management area 16 in which a bar code or the like is set and an ID card or the like is held
3 is provided and is used for identification and operation management of wafers and cassettes stored inside.

The purpose of using such a cassette case 160 is to house therein the cassette 110 to the cassette 150 illustrated in the above-described third to seventh embodiments, for example, in which the wafer 1100 is loaded. This is to prevent external particles from adhering during transportation and storage.

Then, for each of the main body 161 and the lid 162, the surface of the base material 160B is modified by using the materials and conditions exemplified in the above-mentioned Examples 3 to 9, and then the conductive coating 160A is formed. To form. Thereby, the main body 161
Also, the inner and outer surfaces of the lid 162 are prevented from being charged, and the adhesion of particles due to the charging is reduced. Therefore, the wafer 1 is placed inside the cassette case 160 of this embodiment.
By accommodating the cassettes 110 to 150 holding 100, it is possible to reliably prevent particles from adhering to the internal wafer 1100, as in the above-described third to ninth embodiments. In addition, even when the wafer 1100 and the cassettes 110 to 150 are charged,
The wafer 1100 and the cassettes 110 to 150
It is possible to prevent the electrostatic breakdown of the wafer 1100 by realizing the gradual discharge of static electricity in the above.

Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the embodiments, and various modifications can be made without departing from the scope of the invention. Needless to say.

For example, the target plate-like material is not limited to the semiconductor wafer exemplified in the above-mentioned embodiments, but can be widely applied to precise surface treatment of TFT glass substrates, optical disks, reticles and the like.

Further, for example, in the description of each of the above-mentioned embodiments, the case where the conductive polymer is applied to the surface of the desired base material has been described. However, the conductive polymer is provided in a desired ratio with respect to a desired resin. A raw material obtained by mixing the above may be molded to obtain a storage container having desired conductivity. In this case, by considering the affinity between the conductive polymer to be used and the resin of the base material, it is necessary to mix materials that are not compatible with the base material resin, such as conductive powders and fibers of conventional metals and carbon. There is no concern about the contamination of the wafer due to the above.

The storage container of the present invention is not limited to the wafer cassette described in the embodiment, but is made of an insulating resin such as a liquid crystal display (TFT) cassette, a cassette case, metal, or ceramics. It can be applied to impart conductivity to various types of cassettes.

Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the spirit of the invention. It goes without saying that it is possible.

[0211]

Advantageous effects obtained by typical ones of the inventions disclosed in the present application will be briefly described.
It is as follows.

That is, according to the article handling member, the article handling apparatus and the manufacturing method thereof of the present invention, when holding an article such as a semiconductor wafer, the article such as a semiconductor wafer to be held is contaminated with a metal component or the like. It is possible to obtain an effect that it can be maintained in a clean and highly pure state without being used.

Further, according to the article handling member, the article handling apparatus and the manufacturing method thereof of the present invention, when holding an article such as a semiconductor wafer, the surface resistance value of the contact member is controlled within a predetermined range and the held semiconductor is held. An effect that a discharge current value from an article such as a wafer can be controlled within a predetermined range to prevent problems such as semiconductor element destruction due to electrostatic damage that occurs when static electricity charged in an article such as a semiconductor wafer is discharged. Is obtained.

Further, according to the article handling member, the article handling apparatus, and the method of manufacturing the same of the present invention, it is possible to obtain the effect that it is possible to realize the prevention of static charge on the contacted object in a simple manufacturing process.

Further, according to the storage container of the present invention, it is possible to obtain the effect that the contacting object is not contaminated or damaged.

Further, according to the storage container of the present invention, it is possible to prevent the contacting object from being charged, and to prevent the electrostatic breakdown due to the gradual discharge from the charged object.

Further, according to the storage container of the present invention, it is possible to obtain the effect that it is possible to realize the prevention of static charge on the contacted object by a simple manufacturing process.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing an example of an article handling device according to an embodiment of the present invention.

FIG. 2 is a flowchart showing an example of the manufacturing process.

FIG. 3 is a cross-sectional view showing an example of the configuration of an article handling device according to another embodiment of the present invention.

FIG. 4 is a cross-sectional view showing a part of the device in an enlarged manner.

FIG. 5 is a plan view thereof.

FIG. 6 is a flowchart showing an example of the manufacturing process.

FIG. 7 is a flowchart showing an example of processing for forming a conductive resin film on a substrate.

FIG. 8 is a conceptual diagram showing an example of a state in which a conductive resin film is formed on a substrate.

FIG. 9 is a flowchart showing an example of a process of forming a conductive resin film on a substrate.

FIG. 10 is a conceptual diagram showing an example of a state in which a conductive resin film is formed on a substrate.

FIG. 11 is a circuit model diagram showing an example of an electrostatic discharge process on a semiconductor wafer.

FIG. 12 is a flowchart showing a modified example of the step of forming the conductive resin coating film illustrated in the flowchart of FIG.

FIG. 13 is a perspective view showing an example of the configuration of a storage container according to an embodiment of the present invention.

FIG. 14 is a sectional view of a part thereof.

FIG. 15 is a perspective view showing an example of the configuration of a storage container according to another embodiment of the present invention.

FIG. 16 is a sectional view of a part thereof.

[Explanation of symbols]

1 Semiconductor Wafer 2 Wafer Adsorption Part 3 Earth Ground Terminal 4 Adsorption Presence Switch 5 Contact Resistance 6 Contact Capacitor 7 Substrate 8 Conductive Resin Film 9 Photocurable Conductive Resin Paint 10 Substrate 11 Conductive Resin Film 20 Semiconductor Wafer 21 Conductive Vacuum Adsorption spin head 22 Base material 23 Conductive resin film 24 Motor shaft 25 Earth ground terminal 26 Vacuum exhaust hollow hole 27 Vacuum exhaust 28 Wafer suction surface 28a Wafer suction groove 29 Vacuum exhaust port 40 Semiconductor wafer 41 Conductive wafer handler part 42 Support Pin part 43 Guide part 44 Base material 45 Coat film 46 Conductive resin film 47 Mounting bolt 48 Drive link 49 Drive motor 49a Ground terminal 51 Drop nozzle 52 Pressurizing pipe 53 Conductive resin film 60 Chemical liquid container (storage container) 61 Base material 62 Conductive resin coating 63 Ground terminal 70 photoresist liquid 110 cassette (made of polyethylene) 110A coating 110B base material 111 guide protrusion 112 holding groove 113 bottom plate 114 drain hole 120 cassette (made of perfluoroalkoxy vinyl ether copolymer) 120A coating 120B base material 130 cassette (polyether ether ketone resin) 130A coating 130B base material 140 cassette (made of aluminum) 140A coating 140B base material 150 cassette (made of polyethersulfone resin) 150A coating 150B base material 160 cassette case 160A coating 160B base material 161 main body 162 lid body 163 management area 170 cassette (Polytetrafluoroethylene) 170A coating 170B base material 180 cassette (made of perfluoroalkoxy vinyl ether copolymer) 180A coating 80B base material 1100 wafer

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification code Internal reference number FI Technical display location H01L 23/60 9470-5G H05F 3/02 L H05F 3/02 0333-3E B65D 85/38 R H01L 23/56 B (72) Inventor Masahiro Mitsuishi 8-7-301 Uchidehama, Otsu, Shiga Prefecture (72) Inventor Ken Inoue 2-2-22-104 Wakayamadai, Shimamoto-cho, Mishima-gun, Osaka Prefecture (72) Inventor Suezaki Minato 2-15-1, Miyatacho, Takatsuki City, Osaka Prefecture

Claims (16)

[Claims] 1. An article handling, characterized in that a surface of a base material having a desired shape is modified and the surface of the base material is coated with a conductive polymer or a mixture of a conductive polymer and a curable resin. Element. 2. The article handling member according to claim 1, wherein the surface of the base material is modified by using corona discharge. 3. The article handling member according to claim 1, wherein the surface of the base material is modified by plasma treatment. 4. The article handling member according to claim 1, wherein the surface of the base material is modified by irradiation with radiation. 5. The article handling member according to claim 1, wherein the surface of the base material is modified by irradiation of electromagnetic waves. 6. The article handling according to claim 1, wherein a photocurable conductive polymer or a photocurable resin is used as the conductive polymer or curable resin with which the surface of the base material is coated. Element. 7. The article handling according to claim 1, wherein a radiation curable conductive polymer or a radiation curable resin is used as the conductive polymer or the curable resin with which the surface of the base material is coated. Element. 8. The article handling according to claim 1, wherein a thermosetting conductive polymer or a thermosetting resin is used as the conductive polymer or the curable resin with which the surface of the base material is coated. Element. 9. A storage container, characterized in that a surface of a base material having a desired shape is modified, and the surface of the base material is coated with a conductive polymer or a mixture of a conductive polymer and a curable resin. . 10. The storage container is a wafer cassette for storing semiconductor wafers.
The described storage container. 11. The storage container according to claim 9, wherein the storage container is a reticle cassette for storing a reticle. 12. The storage container according to claim 9, wherein the storage container is a liquid crystal display cassette that stores a liquid crystal display substrate. 13. The storage container according to claim 9, wherein the storage container is a drug container for storing a desired drug. 14. An article handling apparatus having the article handling member according to claim 1, 2, 3, 4, 5, 6, 7 or 8. 15. A first method for modifying a surface of a base material having a desired shape.
And a second step of coating the surface of the base material with a conductive polymer or a mixture of a conductive polymer and a curable resin. 16. The surface of the base material is modified in at least one of corona discharge, plasma treatment, irradiation of radiation, and irradiation of electromagnetic waves in the first step. 15. The method for manufacturing the article handling member according to item 15.