KR100431293B1 - Apparatus for manufacturing semiconductor device - Google Patents

Abstract

The present invention relates to a method for manufacturing a semiconductor device, comprising a baking upper lead having an upper exhaust pipe, a heating plate on which a wafer is mounted, and a baking lower lead disposed opposite to the baking upper lead with the heating plate interposed therebetween. In the method for manufacturing a semiconductor device comprising a baking step performed using a plasma ignition electrode is disposed on the inner surface of the baking upper lead, the heating and disturbance network, any one of the electric field or heating device on the inner surface of the baking upper lead Is disposed, and the baking lower lid includes a process of preventing and removing contaminants from adsorbing onto the wafer or on the wafer by using the equipment having the lower exhaust pipe disposed therein, and the contaminants in the baking equipment generated during the baking process. Insist on minimizing adsorption and removing adsorbed contaminants Prevent adhesion of contaminants on the fine circuit pattern, it is effective that process capability is improved such as to minimize contamination and subsequent cleaning of the process equipment.

Description

Equipment for manufacturing semiconductor device {APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE}

The present invention relates to a device for manufacturing a semiconductor device, and more particularly to a device for manufacturing a semiconductor device that can improve the processing capability of the etching and cleaning equipment by preventing contamination of the baking equipment during the process of highly integrated microcircuit process.

In general, in the manufacture of semiconductor devices, in order to form a fine pattern, a photolithography process of etching a lower layer thin film using a photosensitive polymer pattern as a mask is applied.

Referring to the baking process performed using the semiconductor device manufacturing equipment (shown in FIG. 1) according to the prior art applying the photolithography process as follows.

The baking process according to the prior art, as shown in Figure 1, includes a photosensitive film post-baking, post-exposure baking and post-development baking.

First, after the photoresist coating is baked, the wafer 5 mounted on the heating plate 6 on the upper lid 2 and the lower lid 7 provided with the bottom up exhaust pipe 1 as shown in FIG. Non-contact method to the wafer 5 for the purpose of alleviating the shear stress of the photosensitive film (not shown) rotated on the front surface and stabilizing the applied photosensitive film (not shown) thickness according to the continuous evaporation (3) of the photosensitive liquid dispersion solvent. ) By heating with heating plate (6).

In addition, post-exposure baking is performed for the purpose of eliminating post-exposure standing wave development and for implementing a pattern shape when using a chemically amplified photosensitive film.

In addition, the post-development baking is performed for the purpose of securing time stability of the pattern implemented by the photoresist and improving the etching resistance.

However, the manufacturing equipment of the semiconductor device according to the prior art has the following problems.

In the prior art, baking is frequently used for each application as described above, and organic contaminants in the baking equipment chamber due to evaporation of the dispersion solvent and the polymer material in the photoresist film (not shown) during the baking process for each purpose. Is inevitable, and there is a problem that the adsorbed or deposited contaminants adhere to the wafer.

In addition, the contamination causes damage to the highly integrated microcircuit pattern (not shown) on the wafer, and lowers the processing capability of the etching and cleaning equipment due to the subsequent process of the contaminated wafer.

Accordingly, the present invention has been made to solve the problems of the prior art, an object of the present invention is to minimize the adsorption of contaminants and to remove the adsorbed contaminants during baking of the photoresist to prevent the contamination of the pattern of the highly integrated microcircuit And to provide a semiconductor device manufacturing equipment that can minimize the pollution of the subsequent process equipment and improve the cleaning ability.

1 is a cross-sectional view of a manufacturing apparatus of a semiconductor device according to the prior art.

Figure 2 is a cross-sectional view of the manufacturing equipment of the semiconductor device according to the present invention.

Explanation of symbols on the main parts of the drawings

10: UPPER EXHAUST LINE

20: BAKING UPPER LID

40: Evaporation of Dispersion Solvent and Polymeric Materials (EVAPORATED SOLVENT AND POLYMER)

50: wafer (WAFER)

60: HEATING PLATE

70: BAKING UNDER LID

80: plasma ignition electrode (PLASMA IGNITION ELECTRODE)

90: HEATING AND AGITATION MESH

100: UNDER EXHAUST LINE

110: chamber

In order to achieve the above object, it is carried out using the equipment consisting of a baking upper lead with an upper exhaust pipe, a heating plate on which the wafer is mounted, and a baking lower lead disposed opposite the baking upper lead with the heating plate therebetween. In the manufacturing apparatus of a semiconductor device comprising a baking process, the manufacturing apparatus of a semiconductor device according to the present invention, by injecting oxygen into the equipment to generate a plasma, using the plasma to contaminate the equipment or on the wafer The material is decomposed and removed, and a high voltage is applied to the inner surface of the baking upper lead, and a plasma ignition electrode and a low voltage are applied to the inside of the equipment, so that the inside of the equipment is changed by electric field change and heat generation over time of heating and disturbance network. Decompose contaminants on the wafer and heat Heating and disturbing networks are respectively disposed to reduce the adsorption characteristics of contaminants in the equipment or on the wafer due to the temperature difference between the plate and the baking upper lid, and the baking lower lid is provided with contaminants in the equipment or on the wafer. It is characterized in that the lower exhaust pipe is disposed to prevent the adsorption.

Hereinafter, with reference to the accompanying drawings, manufacturing equipment for a semiconductor device according to the present invention will be described in detail.

2 is a cross-sectional view of a manufacturing apparatus of a semiconductor device according to the present invention.

As shown in FIG. 2, in the manufacturing of the semiconductor device according to the present invention, a wafer 50 (WAFER) coated with a photoresist film (not shown) is mounted on a heating plate 60 (HEATING PLATE) in a photolithography process. Baking is performed by transferring heat from the heating plate 60 to the wafer 50.

In this case, in order to prevent the dispersion solvent and the polymer component in the photoresist film (not shown) from the wafer 50 from being evaporated 40 to be attached to the baking upper lead 20, the baking upper lead 20 may be prevented. A certain amount of low voltage alternating electric field is applied to an electric field or a temperature raising device, preferably heating and disturbing network (90) installed on the side.

Then, the evaporated dispersion solvent and the polymer component are further decomposed by the electric field change and the heat generation over time of the heating and disturbing network 90, and the temperature difference between the heating plate 60 and the baking upper lead 20. The adsorption characteristics of the dispersion solvent and the polymer component are reduced.

In addition, a top down exhaust pipe 100 (Under EXHAUST LINE) 100 is installed on the baking bottom lid 70 in addition to the top bottom exhaust pipe 10 (upper exhaust line 10) installed in the top baking top lid 20, and the evaporated dispersion solvent. And since the fluid behavior of the polymer component is activated, the exhaust efficiency is increased.

For this reason, the adsorption of contaminants in the chamber 110 is minimized.

On the other hand, even by the above method, the adsorption of the pollutant to some extent is inevitable, and the contaminants are deposited as the number of times of use of the chamber 110 is repeated. Thus, a gas, preferably oxygen (0 ₂ ) gas, is injected into the chamber 110 to remove the adsorbed and deposited contaminants.

Subsequently, a plasma is generated in the chamber 110 by applying a high voltage to the plasma ignition electrode 80 disposed on the inner surface of the baking upper lead 20.

The plasma is generated several times to decompose the contaminants adsorbed and deposited in the chamber 110 and exhausted to the outside through the upper and lower exhaust pipes 10 and 100 to remove the contaminants.

On the other hand, instead of using the plasma as described above to remove the contaminants can be removed by spraying gaseous or liquid components.

Thereafter, a predetermined subsequent process is performed to complete the semiconductor device.

Various embodiments can be easily implemented as well as self-explanatory to those skilled in the art without departing from the principles and spirit of the present invention. Accordingly, the claims appended hereto are not limited to those already described above, and the following claims are intended to cover all of the novel and patented matters inherent in the invention, and are also common in the art to which the invention pertains. Includes all features that are processed evenly by the knowledgeable.

As described above, the semiconductor device manufacturing equipment according to the present invention has the following effects.

In the present invention, by minimizing the adsorption of contaminants in the baking equipment generated by the baking process and removing the adsorbed contaminants, it is possible to prevent the adhesion of contaminants on the highly integrated microcircuit patterns, and to minimize the contamination of the subsequent process equipment, and The process capability is improved.

Claims (2)

A semiconductor device comprising a baking process performed by using a device comprising a baking upper lead provided with an upper exhaust pipe, a heating plate on which a wafer is mounted, and a baking lower lead disposed to face the baking upper lead with the heating plate therebetween. In the manufacturing equipment of Oxygen is injected into the equipment to generate a plasma, and the plasma is used to decompose and remove contaminants in the equipment or on the wafer, Applying a high voltage to the inner surface of the baking upper lead, a plasma ignition electrode for generating a plasma in the equipment and a low voltage are applied to remove contaminants in the equipment or on the wafer by electric field change and heat generation over time of heating and disturbance network. Heating and disturbance networks are arranged, respectively, which decompose and degrade the adsorption properties of contaminants in the equipment or on the wafer due to the temperature difference between the heating plate and the baking top lid, And the lower exhaust pipe is disposed in the baking lower lead to prevent adsorption of contaminants in the equipment or on the wafer. delete