JPH0159734B2 - - Google Patents
Info
- Publication number
- JPH0159734B2 JPH0159734B2 JP56135825A JP13582581A JPH0159734B2 JP H0159734 B2 JPH0159734 B2 JP H0159734B2 JP 56135825 A JP56135825 A JP 56135825A JP 13582581 A JP13582581 A JP 13582581A JP H0159734 B2 JPH0159734 B2 JP H0159734B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- gas
- plasma etching
- etching
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000007789 gas Substances 0.000 claims description 35
- 238000001020 plasma etching Methods 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 17
- 229920002120 photoresistant polymer Polymers 0.000 description 15
- 239000000758 substrate Substances 0.000 description 11
- 239000011521 glass Substances 0.000 description 9
- 239000011651 chromium Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Description
【発明の詳細な説明】
〔概要〕
プラズマエツチング装置の改善に関し、
試料面の局部箇所をエツチングできるようにす
ることを目的とし、
真空に排気される密閉容器中の電圧の印加され
る一電極とその対向電極となる試料設置台とを備
え、一電極にはエツチングガスを電極表面までそ
れぞれ独立して供給する複数のエツチングガス供
給路が設けられていることを特徴とする。[Detailed Description of the Invention] [Summary] Regarding the improvement of a plasma etching device, the purpose of this invention is to enable etching of a localized portion of a sample surface. The present invention is characterized in that it is equipped with a sample installation stand serving as a counter electrode, and that one electrode is provided with a plurality of etching gas supply paths that independently supply etching gas to the electrode surface.
本発明は半導体装置などの製造方法に用いられ
るプラズマエツチング装置の改善に関するもので
ある。
The present invention relates to improvements in plasma etching equipment used in methods of manufacturing semiconductor devices and the like.
例えば、半導体装置のICやLSI等を製造する場
合、製造工程で一般にフオトマスクが用いられて
おり、そのフオトマスクを作製する場合、まずガ
ラス基板上にクロム（Cr）等の金属膜を蒸着法
によつて被着し、次いで、基板上に例えばネガ型
のホトレジスト膜を塗布したのち、所定パターン
に該ホトレジスト膜を電子ビーム露光法等によつ
て露光し、更に、未露光部分のホトレジスト膜を
ホトレジスト膜除去液で除去して所定パターンの
ホトレジスト膜を形成する。次いで、そのパター
ンニングしたホトレジスト膜をマスクにして下部
のCr膜の下要部分をエツチング除去し、所定の
Cr膜パターンをもつたマスクパターンをガラス
基板上に作製している。
For example, when manufacturing semiconductor devices such as ICs and LSIs, photomasks are generally used in the manufacturing process, and when making a photomask, a metal film such as chromium (Cr) is first deposited on a glass substrate by vapor deposition. Then, after coating a negative type photoresist film on the substrate, the photoresist film is exposed in a predetermined pattern by electron beam exposure method or the like, and then the unexposed portions of the photoresist film are covered with a photoresist film. A photoresist film with a predetermined pattern is formed by removing with a removal solution. Next, using the patterned photoresist film as a mask, the essential parts of the lower Cr film are removed by etching.
A mask pattern with a Cr film pattern is fabricated on a glass substrate.
ここに、このCr膜の不要部分をエツチング除
去するエツチング装置としてプラズマエツチング
装置を使用しており、そのようなプラズマエツチ
ング装置の概要は真空に排気される密閉容器内に
電圧（例えば、13.56MHZの高周波電圧）を印加
する一電極とその対向電極とを平行に対向して配
置し、一電極の対向面に多数のガス噴出孔を設
け、他方の対向電極の対向面には試料（フオトマ
スク）を載置して、前記ガス噴出孔から四塩化炭
素（CCl4）ガスなどのエツチングガスを噴出し、
そのガスをプラズマ化してCr膜をエツチングし
ている。従つて、対向電極は試料設置台を兼ねて
おり、一方の一電極は、通常、電極内部を空洞に
して対向面に多数のガス噴出孔を設けた構成にな
つている。 Here, a plasma etching device is used as an etching device to remove unnecessary portions of this Cr film. One electrode that applies a high-frequency voltage (high-frequency voltage) and its counter electrode are placed parallel to each other, facing each other, and a large number of gas ejection holes are provided on the opposing surface of one electrode, and a sample (photomask) is placed on the opposing surface of the other counter electrode. and blowing out an etching gas such as carbon tetrachloride (CCl 4 ) gas from the gas blowing hole,
The gas is turned into plasma to etch the Cr film. Therefore, the counter electrode also serves as a sample mounting table, and one of the electrodes usually has a structure in which the inside of the electrode is hollow and a large number of gas ejection holes are provided on the opposing surface.
ところで、上記のようなマスクの製造工程にお
いて、微細な空気中の塵や、あるいは、Cr膜を
エツチングする際に除去された膜残渣がガラス基
板へ再付着するといつた現象が生じ、それが異物
になつて正規のマスクパターンを害する不具合を
生じる場合がある。
By the way, in the manufacturing process of the above-mentioned mask, a phenomenon occurs in which fine dust in the air or film residue removed when etching the Cr film re-adheres to the glass substrate, which can lead to foreign matter. This may cause problems that damage the regular mask pattern.
そこで、これらの異物を除去してフオトマスク
を再生する方法が採られているが、それには上記
に説明した通常のプラズマエツチング装置を用い
ており、その再生方法は異物のあるガラス基板の
全面に、例えばポジ型のホトレジスト膜を塗布し
たのち、前記異物が付着している部分上のホトレ
ジスト膜を局部的に露光し、その露光したレジス
ト膜部分を現像除去して異物を露出させ、該異物
のみをCCl4ガスをプラズマ化して、プラズマエ
ツチングによつて除去していた。 Therefore, a method has been adopted to remove these foreign substances and regenerate the photomask, but this uses the ordinary plasma etching equipment described above. For example, after applying a positive photoresist film, the photoresist film on the part where the foreign matter is attached is locally exposed to light, and the exposed resist film part is developed and removed to expose the foreign matter, and only the foreign matter is removed. CCl 4 gas was turned into plasma and removed by plasma etching.
しかし、このような再生方法はガラス基板全面
をプラズマエツチングする方法であるから、プラ
ズマエツチングの際に正規のマスクパターンを被
覆しているホトレジスト膜が変質して硬化し、そ
の硬化したホトレジスト膜をレジスト除去剤で除
去しようとしても除去できないという問題を生じ
ている。 However, since this regeneration method involves plasma etching the entire surface of the glass substrate, the photoresist film covering the regular mask pattern changes in quality and hardens during plasma etching, and the hardened photoresist film is used as a resist. The problem arises that even if an attempt is made to remove it with a remover, it cannot be removed.
本発明はこのような問題点を解消させ、試料の
エツチングしたい局部箇所のみ選択的にエツチン
グ除去して、他の被覆したレジスト膜に悪影響を
与えないようにすることを目的とした新規な構造
のプラズマエツチング装置を提供するものであ
る。 The present invention solves these problems and has a novel structure for selectively etching away only the local portions of the sample that are desired to be etched, without adversely affecting other coated resist films. A plasma etching apparatus is provided.
その課題は、真空に排気される密閉容器中に電
圧の印加される一電極とその対向電極となる試料
設置台とを備え、一電極にはエツチングガスを電
極表面までそれぞれ独立して供給する複数のエツ
チングガス供給路が設けられているプラズマエツ
チング装置によつて解決される。
The challenge was to equip a closed container that is evacuated with one electrode to which a voltage is applied and a sample mounting stand that serves as the opposite electrode, and one electrode to which multiple etching gases are supplied independently to the electrode surface. This problem is solved by a plasma etching apparatus provided with an etching gas supply path of 1.
即ち、本発明は、一電極の試料対向面に配置し
た複数のガス噴出孔をそれぞれ独立したガス供給
路に連結して、ガス噴出孔を個別に開閉制御でき
るような構成にする。そうすれば、試料の所定箇
所に対向したガス噴出孔のみを選択的に開口し
て、その所定箇所のみをエツチング処理すること
ができて、被覆したレジスト膜を変質して硬化さ
せることが少なく、フオトマスクの収率向上など
の効果が得られる。
That is, in the present invention, a plurality of gas ejection holes arranged on the sample-facing surface of one electrode are connected to independent gas supply paths, so that opening and closing of the gas ejection holes can be controlled individually. By doing so, it is possible to selectively open only the gas ejection holes facing a predetermined location on the sample and perform the etching process on only that predetermined location, which reduces the possibility of deterioration and hardening of the coated resist film. Effects such as improved photomask yield can be obtained.
以下、図面を参照して本発明を詳細に説明す
る。
Hereinafter, the present invention will be explained in detail with reference to the drawings.
第１図は本発明にかかるプラズマエツチング装
置の概略図で、第２図は該装置を構成する電極の
対向面から見た平面図で、第２図はガス噴出孔の
配置を示している図である。 FIG. 1 is a schematic diagram of a plasma etching apparatus according to the present invention, FIG. 2 is a plan view of the plasma etching apparatus as viewed from the opposing surface of the electrodes, and FIG. 2 is a diagram showing the arrangement of gas nozzles. It is.
図示のように、本発明にかかるプラズマエツチ
ング装置はベルジヤー等の密閉容器１内に円板状
の銅などからなる金属製の電極２と同じく円板状
の銅からなる金属製の試料設置台３（対向電極）
とを対向配置しており、その電極２の対向面にエ
ツチングガスを噴射する多数のガス噴出孔４Ａ，
４Ｂ，４Ｃ，４Ｄ…が配設されて、そのガス噴出
孔はガラス基板（試料）の全面をエツチングでき
るような所定位置に複数個が配設されている。こ
のガス噴出孔４Ａ，４Ｂ，４Ｃ，４Ｄ…はそれぞ
れ電極２の側面または背面から密閉容器１の外部
へ延びて、密閉容器１の外部でソレノイドバルブ
を付設したガス供給路１０Ａ，１０Ｂ，１０Ｃ，
１０Ｄ…に個々に連結しており、このソレノイド
バルブを開閉することによつて個々のガス噴出孔
からエツチングガスを噴射することができる構成
である。 As shown in the figure, the plasma etching apparatus according to the present invention includes a closed container 1 such as a bell gear, and a metal electrode 2 made of disk-shaped copper or the like, and a metal sample mounting stand 3 made of disk-shaped copper. (Counter electrode)
are arranged facing each other, and a large number of gas injection holes 4A, which inject etching gas onto the opposing surface of the electrode 2,
4B, 4C, 4D, . . . are arranged, and a plurality of gas ejection holes are arranged at predetermined positions such that the entire surface of the glass substrate (sample) can be etched. These gas ejection holes 4A, 4B, 4C, 4D, .
10D..., and by opening and closing these solenoid valves, etching gas can be injected from each gas ejection hole.
さて、正規マスクパターン５と不要な膜残渣や
塵などの異物６とが被着したガラス基板７（試
料；再生フオトマスク）が作製されると、従来と
同じく、それを再生するためにガラス基板７上
に、例えばポジ型のホトレジスト膜８を塗布し
て、異物６の上面のホトレジスト膜を局部的に露
光し、さらに現像してホトレジスト膜を除去して
異物のみを露出させる。そのガラス基板７を第１
図に示すプラズマエツチング装置の試料設置台３
上に載せて、密閉容器１内を排気バルブ９を通し
て10-5Torr程度の真空度まで排気する。 Now, when the glass substrate 7 (sample; recycled photomask) on which the regular mask pattern 5 and foreign matter 6 such as unnecessary film residue and dust are adhered is produced, the glass substrate 7 is prepared in order to reproduce it, as in the past. For example, a positive type photoresist film 8 is applied thereon, the photoresist film on the upper surface of the foreign object 6 is locally exposed, and further developed to remove the photoresist film and expose only the foreign object. The glass substrate 7 is
Sample installation stand 3 of the plasma etching apparatus shown in the figure
The inside of the sealed container 1 is evacuated through the exhaust valve 9 to a degree of vacuum of about 10 -5 Torr.
次いで、例えば、ガス噴出孔４Ｄに連結したガ
ス供給路１０Ｄのみのソレノイドバルブを開け、
その他のガス供給路のソレノイドバルブを閉じ、
ガス噴出孔４ＤのみよりCCl4ガスを噴射して電
極２と試料支持台３の間に高周波電圧を印加し、
噴射したCCl4ガスをプラズマ化させて、そのガ
スプラズマによつて異物６のみをプラズマエツチ
ングして除去する。 Next, for example, open the solenoid valve of only the gas supply path 10D connected to the gas jet hole 4D,
Close the solenoid valves of other gas supply lines,
CCl 4 gas is injected only from the gas injection hole 4D and a high frequency voltage is applied between the electrode 2 and the sample support 3,
The injected CCl 4 gas is turned into plasma, and only the foreign matter 6 is plasma-etched and removed by the gas plasma.
このようにすれば、従来のような正規のマスク
パターン５を被覆しているホトレジスト膜８を変
質して硬化させることなく、フオトマスクを収率
良く再生することができる。 In this way, the photomask can be regenerated with good yield without deteriorating and hardening the photoresist film 8 covering the regular mask pattern 5 as in the prior art.
なお、本発明にかかるプラズマエツチング装置
は上記に説明したようなフオトマスクの再生に用
いるだけでなく、一電極の対向面に配置したガス
噴射孔のすべてを開口すれば試料全面をプラズマ
エツチングすることができて、通常のプラズマエ
ツチング装置としても利用できるものである。 The plasma etching apparatus according to the present invention can be used not only for regenerating photomasks as described above, but also for plasma etching the entire surface of a sample by opening all of the gas injection holes arranged on the opposing surface of one electrode. It can also be used as a normal plasma etching device.
以上の説明から明らかなように、本発明にかか
るプラズマエツチング装置はフオトマスクを収率
良く再生することができる装置であるが、このよ
うなプラズマエツチング装置はフオトマスク以外
にも半導体基板の局部エツチングなどに利用する
ことができ、エツチングガスの種類を変えれば、
アルミニウムのような配線膜や、二酸化シリコン
のような絶縁膜なども局部箇所のみ選択的にエツ
チングできて、フオトマスク以外の半導体装置の
製造方法全搬に適用して、その収率を向上するこ
とができる効果のあるものである。
As is clear from the above description, the plasma etching apparatus according to the present invention is an apparatus that can regenerate photomasks with high yield, but such plasma etching apparatus can also be used not only for photomasks but also for local etching of semiconductor substrates. If you change the type of etching gas,
Wiring films such as aluminum and insulating films such as silicon dioxide can be etched selectively in localized areas, and can be applied to all semiconductor device manufacturing methods other than photomasks to improve yields. It is effective.
第１図は本発明にかかるプラズマエツチング装
置の概略図、第２図は電極の対向面から見た平面
図である。
図において、１は密閉容器、２は電極、３は試
料設置台（対向電極）、４Ａ，４Ｂ，４Ｃ，４Ｄ
…はガス噴出孔、５はマスクパターン、６は異
物、７はガラス基板（試料）、８はホトレジスト
膜、９は排気バルブ、１０Ａ，１０Ｂ，１０Ｃ，
１０Ｄ…はガス供給路を示している。
FIG. 1 is a schematic diagram of a plasma etching apparatus according to the present invention, and FIG. 2 is a plan view of the plasma etching apparatus as seen from the opposing surface of the electrodes. In the figure, 1 is a sealed container, 2 is an electrode, 3 is a sample installation stand (counter electrode), 4A, 4B, 4C, 4D
... is a gas ejection hole, 5 is a mask pattern, 6 is a foreign object, 7 is a glass substrate (sample), 8 is a photoresist film, 9 is an exhaust valve, 10A, 10B, 10C,
10D... indicates a gas supply path.
Claims (1)
れる一電極とその対向電極となる試料設置台とを
備え、一電極にはエツチングガスを電極表面まで
それぞれ独立して供給する複数のエツチングガス
供給路が設けられていることを特徴とするプラズ
マエツチング装置。1 A sealed container that is evacuated is equipped with one electrode to which a voltage is applied and a sample mounting stand serving as the counter electrode, and one electrode is equipped with a plurality of etching gases that independently supply etching gas to the electrode surface. A plasma etching apparatus characterized in that a supply path is provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13582581A JPS5837924A (en) | 1981-08-28 | 1981-08-28 | Plasma etching apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13582581A JPS5837924A (en) | 1981-08-28 | 1981-08-28 | Plasma etching apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5837924A JPS5837924A (en) | 1983-03-05 |
| JPH0159734B2 true JPH0159734B2 (en) | 1989-12-19 |
Family
ID=15160667
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13582581A Granted JPS5837924A (en) | 1981-08-28 | 1981-08-28 | Plasma etching apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5837924A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56118208A (en) * | 1980-02-22 | 1981-09-17 | Furukawa Electric Co Ltd | Aerial transmission line |
| JPH0810689B2 (en) * | 1986-12-22 | 1996-01-31 | 東京エレクトロン株式会社 | Ashing processing device |
| JP2894658B2 (en) * | 1992-01-17 | 1999-05-24 | 株式会社東芝 | Dry etching method and apparatus |
| JP2009241862A (en) * | 2008-03-31 | 2009-10-22 | Sumitomo (Shi) Construction Machinery Co Ltd | Heat exchange device for construction machine |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5684478A (en) * | 1979-12-10 | 1981-07-09 | Matsushita Electronics Corp | Apparatus for plasma treatment |
-
1981
- 1981-08-28 JP JP13582581A patent/JPS5837924A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5684478A (en) * | 1979-12-10 | 1981-07-09 | Matsushita Electronics Corp | Apparatus for plasma treatment |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5837924A (en) | 1983-03-05 |
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