JPH01217915A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH01217915A JPH01217915A JP4509288A JP4509288A JPH01217915A JP H01217915 A JPH01217915 A JP H01217915A JP 4509288 A JP4509288 A JP 4509288A JP 4509288 A JP4509288 A JP 4509288A JP H01217915 A JPH01217915 A JP H01217915A
- Authority
- JP
- Japan
- Prior art keywords
- film
- resist
- metal film
- oxide film
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000000059 patterning Methods 0.000 claims abstract description 12
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000003513 alkali Substances 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 239000012670 alkaline solution Substances 0.000 abstract description 7
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 abstract description 4
- 239000006087 Silane Coupling Agent Substances 0.000 abstract description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 3
- 239000012298 atmosphere Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 3
- 239000000853 adhesive Substances 0.000 abstract description 2
- 230000001070 adhesive effect Effects 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000006073 displacement reaction Methods 0.000 abstract 1
- 239000003607 modifier Substances 0.000 abstract 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 abstract 1
- 238000005728 strengthening Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 12
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003623 enhancer Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000012779 reinforcing material Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、半導体装置の製造方法に関し、特にフォトリ
ソグラフィ手法に用いられるレジストパターニング技術
の改善に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for manufacturing a semiconductor device, and particularly to an improvement in resist patterning technology used in photolithography.
［従来の技術〕
半導体装置の製造方法において、半導体基板上に所望の
素子パターンや配線パターンなどを形成するパターニン
グ技術は最も重要な技術の１つとなっている。このパタ
ーニング技術は、パターニングすべき層の上にレジスト
を塗布し、これを露光現像してレジストパターンマスク
を形成し、その後、このレジストパターンを下層に転写
して所望の素子パターンなどを形成する方法である。以
下、アルミニウムなどの金属膜をレジストを用いてパタ
ーニングする構成について図を用いて説明する。[Prior Art] In a method of manufacturing a semiconductor device, a patterning technique for forming a desired element pattern, wiring pattern, etc. on a semiconductor substrate is one of the most important techniques. This patterning technology involves applying a resist onto the layer to be patterned, exposing and developing it to form a resist pattern mask, and then transferring this resist pattern to the lower layer to form a desired element pattern, etc. It is. Hereinafter, a configuration for patterning a metal film such as aluminum using a resist will be described with reference to the drawings.
まず、第２Ａ図に示すように、半導体基板１の表面上に
スパッタリング法などを用いてアルミニウム（Ａ ｆＬ
）の金属膜２を形成する。このとき、Ａｌｌ金属膜２の
表面には、Ａｌｌ酸化膜やスパッタリング雰囲気ガスの
汚染物質などからなる酸化膜３が膜厚数１０〜数１００
Ａ程度形成されている。First, as shown in FIG. 2A, aluminum (A fL
) is formed. At this time, on the surface of the All metal film 2, an oxide film 3 made of an All oxide film or a contaminant of the sputtering atmosphere gas is formed with a thickness of several tens to several hundreds of layers.
It is formed to the extent of A.
次に、金属膜２とその上に塗布されるレジストとの密着
を強化するために密着強化剤としてＨＭＤＳ（ヘキサメ
チルジシラザン）などのシランカップリング剤を塗布、
乾燥させる。Next, in order to strengthen the adhesion between the metal film 2 and the resist applied thereon, a silane coupling agent such as HMDS (hexamethyldisilazane) is applied as an adhesion enhancer.
dry.
さらに、第２Ｂ図に示すように、半導体基板１上のＡＱ
、金属膜２の表面上に直接レジストを滴下し、半導体基
板１をスピンさせて均一な膜厚のレジスト膜４を形成す
る。Furthermore, as shown in FIG. 2B, the AQ on the semiconductor substrate 1 is
, a resist is dropped directly onto the surface of the metal film 2, and the semiconductor substrate 1 is spun to form a resist film 4 having a uniform thickness.
その後、レジスト膜４は露光現像処理され、所望のレジ
ストパターンに形成される。Thereafter, the resist film 4 is exposed and developed to form a desired resist pattern.
なお、上記工程において、密着剤の塗布工程は特に必要
とされない場合もある。Note that in the above steps, the step of applying an adhesive may not be particularly required.
［発明が解決しようとする課題］
このように、従来のレジストの塗布工程においては、半
導体基板１上に形成されたＡＩ金属膜２の表面上に直接
レジストを塗布し、レジスト膜４を形成していた。した
がって、Ａｌｌ金属膜２とレジスト膜４との間にはＡｌ
ｌ酸化膜や汚染層からなる酸化膜３が必ず存在していた
。この酸化膜３はレジスト膜４との弱結合層となりレジ
スト膜４とＡｍ金属膜２との界面での密着劣化を引き起
こした。このために、この後のレジスト膜４のバターニ
ング工程やＡｍ金属膜２のパターニング工程において、
レジスト膜４のパターンマスクがずれたり欠落したりし
、これによってＡ１１ｌ金属膜２に形成されるパターン
の精度が低下するなどの問題を引き起こしていた。[Problems to be Solved by the Invention] As described above, in the conventional resist coating process, a resist is directly coated on the surface of the AI metal film 2 formed on the semiconductor substrate 1 to form the resist film 4. was. Therefore, there is Al between the All metal film 2 and the resist film 4.
An oxide film 3 consisting of an oxide film or a contamination layer was always present. This oxide film 3 became a weak bonding layer with the resist film 4, causing deterioration of the adhesion at the interface between the resist film 4 and the Am metal film 2. For this reason, in the subsequent patterning process of the resist film 4 and patterning process of the Am metal film 2,
The pattern mask of the resist film 4 is shifted or missing, which causes problems such as a decrease in the accuracy of the pattern formed on the A11l metal film 2.
したがって、本発明は上記のような問題点を解決するた
めになされたもので、バターニングすべき金属膜とその
上に形成されるレジスト膜との密着力を強化し、形成す
べきパターンの精度が低下することのない半導体装置の
製造方法を提供することを目的とする。Therefore, the present invention has been made to solve the above-mentioned problems, and aims to strengthen the adhesion between the metal film to be patterned and the resist film formed thereon, thereby improving the accuracy of the pattern to be formed. An object of the present invention is to provide a method for manufacturing a semiconductor device that does not cause a decrease in performance.
［課題を解決するための手段］
本発明は、基板上に堆積された金属膜の表面上にレジス
トを塗布した後、露光現像処理を行ない所望のレジスト
パターンを形成するレジストバターニング工程を備えた
半導体装置の製造方法であって、前記金属膜表面をアル
カリ液を用いて洗浄した後、レジストを塗布することを
特徴としている。[Means for Solving the Problems] The present invention includes a resist buttering step in which a resist is applied on the surface of a metal film deposited on a substrate, and then exposed and developed to form a desired resist pattern. The method for manufacturing a semiconductor device is characterized in that a resist is applied after the surface of the metal film is cleaned using an alkaline solution.
［作用］
本発明においては、半導体基板上に堆積された金属膜の
表面をアルカリ液を用いて洗浄し、金属膜の表面に形成
された酸化膜などを除去している。[Operation] In the present invention, the surface of a metal film deposited on a semiconductor substrate is cleaned using an alkaline solution to remove an oxide film formed on the surface of the metal film.
したがって、従来この酸化膜の存在によって弱められて
いたレジストと金属膜との密着結合力が改善され、レジ
スト膜と金属膜とがずれたりあるいはレジストが欠落し
たりするのを防止することができる。Therefore, the adhesive bonding force between the resist and the metal film, which was conventionally weakened by the presence of the oxide film, is improved, and it is possible to prevent the resist film and the metal film from shifting or from missing the resist.
［実施例］ 以下、本発明の一実施例を図を用いて説明する。[Example] An embodiment of the present invention will be described below with reference to the drawings.
まず、第１Ａ図に示すように、半導体基板１上にスパッ
タリング法などを用いてＡｌｌ金属膜２を形成する。こ
のとき、Ａｍ金属膜２の表面上には、Ａｌｌ酸化膜やス
パッタリング雰囲気中のガスによる汚染物質などからな
る酸化膜３が膜厚数１０〜数１００Ａ程度形成されてい
る。First, as shown in FIG. 1A, an All metal film 2 is formed on a semiconductor substrate 1 using a sputtering method or the like. At this time, on the surface of the Am metal film 2, an oxide film 3 made of an All oxide film or a contaminant caused by gas in the sputtering atmosphere is formed to a thickness of about several tens to several hundred angstroms.
次に、第１Ｂ図に示すように、この酸化膜３が表面に形
成された半導体基板１をＴＭＡＲ（テトラメチルアンモ
ニウムハイドロオキサイド）などのアルカリ溶液中で洗
浄し、Ａｍ金属膜２の表面に形成された酸化膜３を除去
する。Next, as shown in FIG. 1B, the semiconductor substrate 1 on which the oxide film 3 is formed is cleaned in an alkaline solution such as TMAR (tetramethylammonium hydroxide), and the oxide film 3 is formed on the surface of the Am metal film 2. The removed oxide film 3 is removed.
そして、第１Ｃ図に示すように、酸化膜３が除去された
Ａｍ金属膜２の表面に、この表面上に塗布されるレジス
トとの密着力を強化するための密着強化材として、ＨＭ
ＤＳなどのシランカップリング剤を塗布し乾燥処理する
。その後、半導体基板１のＡｆＬ金属膜２の表面上にレ
ジストを滴下し、スピンさせて均一な膜厚を有するレジ
スト膜４を形成する。Then, as shown in FIG. 1C, HM is applied to the surface of the Am metal film 2 from which the oxide film 3 has been removed as an adhesion reinforcing material to strengthen the adhesion with the resist coated on this surface.
Apply a silane coupling agent such as DS and dry. Thereafter, a resist is dropped onto the surface of the AfL metal film 2 of the semiconductor substrate 1 and spun to form a resist film 4 having a uniform thickness.
さらに、レジスト膜４を露光現像し、所望のパターン形
状を有するレジストバターニングマスクを形成する。Furthermore, the resist film 4 is exposed and developed to form a resist patterning mask having a desired pattern shape.
なお、上記の製造工程において密着強化剤の塗布工程は
必ずしも必要とされない。Note that the step of applying an adhesion enhancer is not necessarily required in the above manufacturing process.
なお、上記実施例では、半導体基板上にＡＱ金属膜を堆
積させる際に、その表面に同時に形成される酸化膜の洗
浄除去工程を例として説明したが、これに限定されるこ
となく、たとえば次のような工程に対しても本発明を適
用することができる。In addition, in the above embodiment, the cleaning and removal process of the oxide film formed on the surface of the semiconductor substrate at the same time when depositing the AQ metal film on the semiconductor substrate was explained as an example. The present invention can also be applied to processes such as.
すなわち、Ａ〔金属膜の上に形成されたレジスト膜を１
度除去した後、再度レジスト膜を塗布してバターニング
を行なう場合がある。このとき、レジスト膜の除去には
０２ （酸素）プラズマアッシング法などを使用するが
、Ａｌｔ金属膜の表面はこの時に生じる０□イオンにさ
らされ厚い酸化膜が形成される。したがって、この後再
度レジストを塗布する前に、本発明におけるアルカリ液
洗浄工程を挾むことによって、表面上の酸化膜を除去し
レジストとの密着力を改善することができる。That is, A [the resist film formed on the metal film is 1
After removing the resist film, a resist film may be applied again and patterning may be performed. At this time, a 02 (oxygen) plasma ashing method or the like is used to remove the resist film, and the surface of the Alt metal film is exposed to the 0□ ions generated at this time, forming a thick oxide film. Therefore, by performing the alkaline cleaning step of the present invention before applying the resist again, the oxide film on the surface can be removed and the adhesion with the resist can be improved.
また、上記実施例では、レジストとの密着力を改善させ
る対象としてＡｕ金属膜を用いて説明したが、これに限
ることなくたとえば、ＭＯ（モリブデン）、Ｗ（タング
ステン）、Ｔｉ（チタン）などの金属膜に対しても本発
明を適用することができる。Further, in the above embodiment, the Au metal film was used as the target for improving the adhesion with the resist, but the present invention is not limited to this, and examples include, for example, MO (molybdenum), W (tungsten), Ti (titanium), etc. The present invention can also be applied to metal films.
さらに、上記実施例では、金属膜表面に形成された酸化
膜を除去するための溶剤としてＴＭＡＲなどのアルカリ
溶液を用いたが、これに限定されることなく、金属膜表
面に形成される酸化膜を除゛去し得る溶液であれば他の
ものであっても構わない。Further, in the above embodiment, an alkaline solution such as TMAR was used as a solvent for removing the oxide film formed on the surface of the metal film, but the oxide film formed on the surface of the metal film is not limited to this. Any other solution may be used as long as it can remove the .
［発明の効果コ
以上のように、本発明によれば金属膜表面に形成される
酸化膜をアルカリ溶液を用いて除去した後レジストを塗
布するように構成されているので、レジストを用いたバ
ターニング工程において金属膜表面とレジストとのずれ
やレジストの欠落などを防止することができパターン精
度の高い安定した半導体装置の製造を可能とすることが
できる。[Effects of the Invention] As described above, according to the present invention, the oxide film formed on the surface of the metal film is removed using an alkaline solution, and then the resist is applied. In the coating process, misalignment between the metal film surface and the resist, loss of the resist, etc. can be prevented, and it is possible to stably manufacture semiconductor devices with high pattern accuracy.
第１Ａ図、第１Ｂ図および第１Ｃ図は、本発明の一実施
例を示す半導体装置のレジストバターニング工程を示す
断面図である。
また、第２Ａ図および第２Ｂ図は、従来の半導体装置の
レジストバターニング工程を示す断面図である。
図において、２は金属膜、３は酸化膜、４はレジスト膜
を示している。
なお、各図中、同一符号は同一または相当部分を示す。FIGS. 1A, 1B, and 1C are cross-sectional views showing a resist patterning process for a semiconductor device according to an embodiment of the present invention. Further, FIGS. 2A and 2B are cross-sectional views showing a resist patterning process of a conventional semiconductor device. In the figure, 2 is a metal film, 3 is an oxide film, and 4 is a resist film. In each figure, the same reference numerals indicate the same or corresponding parts.
Claims (1)
した後、露光現像処理を行ない所望のレジストパターン
を形成するレジストパターニング工程を備えた半導体装
置の製造方法において、前記金属膜の表面をアルカリ液
を用いて洗浄した後、前記レジストを塗布することを特
徴とする、半導体装置の製造方法。In a semiconductor device manufacturing method comprising a resist patterning step in which a resist is applied on the surface of a metal film deposited on a substrate and then exposed and developed to form a desired resist pattern, the surface of the metal film is treated with an alkali. 1. A method of manufacturing a semiconductor device, comprising applying the resist after cleaning with a liquid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4509288A JP2580681B2 (en) | 1988-02-25 | 1988-02-25 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4509288A JP2580681B2 (en) | 1988-02-25 | 1988-02-25 | Method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01217915A true JPH01217915A (en) | 1989-08-31 |
| JP2580681B2 JP2580681B2 (en) | 1997-02-12 |
Family
ID=12709668
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4509288A Expired - Fee Related JP2580681B2 (en) | 1988-02-25 | 1988-02-25 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2580681B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004304170A (en) * | 2003-03-19 | 2004-10-28 | Hoya Corp | Method of manufacturing reflection mask, and method of manufacturing semiconductor device |
| JP2016017998A (en) * | 2014-07-04 | 2016-02-01 | 豊田合成株式会社 | Method for manufacturing semiconductor device and method for forming resist pattern |
-
1988
- 1988-02-25 JP JP4509288A patent/JP2580681B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004304170A (en) * | 2003-03-19 | 2004-10-28 | Hoya Corp | Method of manufacturing reflection mask, and method of manufacturing semiconductor device |
| JP4521753B2 (en) * | 2003-03-19 | 2010-08-11 | Ｈｏｙａ株式会社 | Reflective mask manufacturing method and semiconductor device manufacturing method |
| JP2016017998A (en) * | 2014-07-04 | 2016-02-01 | 豊田合成株式会社 | Method for manufacturing semiconductor device and method for forming resist pattern |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2580681B2 (en) | 1997-02-12 |
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