JPH08274176A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH08274176A
JPH08274176A JP7072815A JP7281595A JPH08274176A JP H08274176 A JPH08274176 A JP H08274176A JP 7072815 A JP7072815 A JP 7072815A JP 7281595 A JP7281595 A JP 7281595A JP H08274176 A JPH08274176 A JP H08274176A
Authority
JP
Japan
Prior art keywords
chips
chip
electrodes
semiconductor
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7072815A
Other languages
Japanese (ja)
Inventor
Katsura Ochi
桂 越智
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP7072815A priority Critical patent/JPH08274176A/en
Publication of JPH08274176A publication Critical patent/JPH08274176A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To easily sort a plurality of IC chips having different functions from each other even when the IC chips are arranged on the same substrate by measuring the drain-source voltages of specific transistors and recognizing the positions of the semiconductor chips on the semiconductor substrate from the voltage values, etc. CONSTITUTION: On a semiconductor substrate, electrodes 11 are provided at prefixed positions or the same position and a plurality of semiconductor chips having different functions which are actuated when a prescribed voltage is applied to the electrodes 11 and a prescribed input signal is supplied to the electrodes 11 are arranged in a plane. In such a semiconductor device, transistors having different characteristics or connections against each function are provided between the electrodes 11. The drain-source voltages V0 of the transistors are measured and the positions of the semiconductor chips arranged in the same plane are recognized from the voltage values or resistance values of resistance elements.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体装置に関し、特
に異なる機能を判別するのに有利な半導体装置に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a semiconductor device advantageous for discriminating different functions.

【0002】[0002]

【従来の技術】近年、LSI関連技術の発達により使用
者の希望する回路が、比較的自由にLSIとして実現で
きるようになった。また、大規模の回路を1チップ上に
集積することが可能となり、少量多品種の開発生産が求
められるようになっている。
2. Description of the Related Art In recent years, with the development of LSI-related technology, a circuit desired by a user can be realized relatively freely as an LSI. In addition, it becomes possible to integrate a large-scale circuit on one chip, and development and production of a large number of small-quantity products are required.

【0003】一般に、LSIは同一基板上に複数個のチ
ップを配列して同時に製造することで大量生産を行う製
造費用の低減を図ってきた。このような特徴を損なうこ
となく少量多品種の要求に対応する手段として、同一基
板上に機能の異るLSIを配置して製造する方法があ
る。特にマスタスライス方式の場合、製造工程の前工程
で基本セルをあらかじめ作り込んだ下地と呼ばれる半導
体基板上に、工程の後工程で配線接続を変えて機能の異
なる多種類のLSIを形成することができる。
In general, LSI has been attempted to reduce the manufacturing cost for mass production by arranging a plurality of chips on the same substrate and manufacturing them at the same time. As a means for responding to the demand for a small amount and a large variety of products without impairing such characteristics, there is a method of arranging and manufacturing LSIs having different functions on the same substrate. In particular, in the case of the master slice method, it is possible to form various types of LSIs having different functions by changing the wiring connections in the post process of the process on the semiconductor substrate called the base in which the basic cells are prefabricated in the pre process of the manufacturing process. it can.

【0004】次に、基板上へのLSIを1チップ毎に試
験を行う良否を選別する必要があり、自動化に対応した
チップの配列方法として、図3(a)に示すように同一
基板上には同一機能のLSIが配置される。しかし、前
述の特徴を活用するため複数種の機能のLSIを配置
し、自動化に対処する方法としては、列毎または行毎に
異なった機能のチップを配置する(図3(b)および図
3(c)参照)。
Next, it is necessary to judge whether the LSI on the substrate is tested on a chip-by-chip basis. As a chip arranging method corresponding to automation, as shown in FIG. LSIs having the same function are arranged. However, as a method of arranging LSIs having a plurality of types of functions in order to utilize the above-mentioned features and coping with automation, chips having different functions are arranged for each column or each row (FIGS. 3B and 3). (See (c)).

【0005】図3(b)に示す基板上の配置の場合、ま
ずチップA1をプロービングし試験を行う、次に横方向
移動量をチップA1とチップB1の横方向の寸法の和分
として移動し、チップA2をプロービングして試験を行
う。同様にしてチップA3の試験が終了すると、縦方向
にチップA3の縦方向の寸法だけ移動しチップA4の試
験を行う。チップA4について試験が完了すると、チッ
プB1をプロービングしチップA1〜A4の試験と同様
に順次試験を行う。
In the case of the arrangement on the substrate shown in FIG. 3B, the chip A1 is first probed and tested, and then the lateral movement amount is moved as the sum of the lateral dimensions of the chip A1 and the chip B1. , Chip A2 is probed and tested. Similarly, when the test of the chip A3 is completed, the chip A3 is moved in the vertical direction by the vertical dimension of the chip A3 to test the chip A4. When the test of the chip A4 is completed, the chip B1 is probed and the tests are sequentially performed in the same manner as the tests of the chips A1 to A4.

【0006】図3(c)に示す基板上の配置の場合は、
縦方向の移動量をチップA1とチップB1の縦方向の寸
法の和とし、横方向の移動量をチップA1の横方向の寸
法として順次試験を行う。図3(d)に示す基板上の配
置の場合は、n2 の配列とした場合であり、図3(b)
または図3(c)に示すチップの配列の場合と同様に、
横方向の移動量をチップA1とチップB1の横方向の寸
法の和とし、縦方向の移動量をチップA1とチップC1
の縦方向の寸法の和としてチップ(Ai ,Bi,Ci
i ,iは整数)の順で試験を行う。これらの場合、試
験の開始点を試験すべきチップにプロービングしていな
ければならなく、目視により行っていたため、マスタス
ライスのように高密度で似かよったLSIでは非常に困
難であった。
In the case of the arrangement on the substrate shown in FIG. 3 (c),
The test is sequentially performed by setting the vertical movement amount as the sum of the vertical dimensions of the chips A1 and B1 and the horizontal movement amount as the horizontal dimension of the chip A1. The arrangement on the substrate shown in FIG. 3 (d) is an n 2 arrangement, and the arrangement shown in FIG.
Alternatively, as in the case of the chip arrangement shown in FIG.
The horizontal movement amount is the sum of the horizontal dimensions of the chips A1 and B1, and the vertical movement amount is the chips A1 and C1.
Of the chips (A i , B i , C i ,
The test is performed in the order of D i , i is an integer. In these cases, the starting point of the test had to be probed on the chip to be tested, and it was done visually, so that it was very difficult for a high-density and similar LSI such as a master slice.

【0007】この欠点を解決するために、特開昭58−
176966号公報に、あらかじめ定められた位置にあ
る電極間に機能毎に異なる値を有する抵抗体を用いる半
導体装置が開示されている。
In order to solve this drawback, JP-A-58-58
Japanese Patent No. 176966 discloses a semiconductor device that uses a resistor having a value that differs for each function between electrodes located at predetermined positions.

【0008】[0008]

【発明が解決しようとする課題】しかしながら上述の公
知例では、あらかじめ定められた位置に抵抗を配置する
必要がある。LSIの差異を抵抗で判別するためには、
電流と電圧によって判別することになるが、この場合電
圧の判定可能範囲を0.1V程度とすると、電流を数m
A程度しても数KΩ程度の抵抗を必要とするため、大き
な範囲の面積が必要となる問題点があった。また、特定
の端子を必要とし、最も利用範囲の大きいマスタスライ
スの場合、トランジスタでほぼ敷き詰められているため
新たな領域を必要とする問題点もあった。
However, in the above-mentioned known example, it is necessary to dispose the resistor at a predetermined position. In order to distinguish the difference of LSI by resistance,
It will be determined by the current and the voltage. In this case, if the range in which the voltage can be determined is about 0.1 V, the current is several meters.
Even if it is about A, a resistance of about several KΩ is required, so that there is a problem that a large area is required. Further, in the case of the master slice which requires a specific terminal and has the largest usage range, there is a problem that a new area is required because it is almost covered with transistors.

【0009】[0009]

【課題を解決するための手段】本発明の半導体装置は、
半導体基板上に、あらかじめ定められた位置または、同
一の位置にある電極を有し、この電極に所定の電圧源と
入力信号を与えて所定の機能動作する半導体チップの異
なる機能を有する複数個が平面上に配置された半導体装
置において、前記電極間に前記機能毎に対して異なる特
性を有するトランジスタまたは接続の異る抵抗素子とを
備え、前記トランジスタのドレイン−ソース間の電圧を
測定し前記電圧値によりまたは前記抵抗素子の抵抗値に
より前記平面上に配置された半導体チップの前記半導体
基板上の位置を認識する構成である。
According to the present invention, there is provided a semiconductor device comprising:
A plurality of semiconductor chips each having an electrode at a predetermined position or at the same position on a semiconductor substrate, and having a predetermined voltage source and an input signal applied to the electrode and having different functions of a semiconductor chip performing a predetermined function are provided. In a semiconductor device arranged on a plane, a transistor having different characteristics for each function or a resistive element having different connection is provided between the electrodes, and a voltage between a drain and a source of the transistor is measured to measure the voltage. According to the value or the resistance value of the resistance element, the position on the semiconductor substrate of the semiconductor chip arranged on the plane is recognized.

【0010】[0010]

【作用】本発明の半導体装置は、あらかじめ定められた
位置に配置された抵抗を用いるのではなく、この余分に
用意された入出力端子の特性を利用して、異なる機能の
LSIを選別する。出力端子は、駆動能力を確保するた
め、多数のトランジスタの組み合わせで構成される。
In the semiconductor device of the present invention, instead of using resistors arranged at predetermined positions, the characteristics of the extra input / output terminals are used to select LSIs having different functions. The output terminal is composed of a combination of a large number of transistors in order to secure driving capability.

【0011】[0011]

【実施例】以下、本発明の実施例を図面を参照して説明
する。
Embodiments of the present invention will be described below with reference to the drawings.

【0012】図1(a)は、本発明の一実施例の半導体
装置の出力回路のトランジスタの構成を示す。出力回路
は駆動能力を確保するため複数個のトランジスタ(P1
〜Pn,N1〜Nn)の組み合わせにより構成されてい
る。このトランジスタの組み合わせにより出力端子11
から電流(I)を注入したときの電圧降下V0が異な
る。例えばMOS型トランジスタの場合、トランジスタ
PnとトランジスタNnで構成するインバータ21のト
ランジスタNnの1個あたりの電圧降下V0は約0.7
Vとなり、図1(b)に示す出力回路をトランジスタ2
個で構成した場合の電圧降下は約1.4Vとなることか
ら、それぞれのチップの違いを判別することができる。
FIG. 1A shows a structure of a transistor of an output circuit of a semiconductor device according to an embodiment of the present invention. The output circuit has a plurality of transistors (P1
.About.Pn, N1 to Nn). Output terminal 11 by this combination of transistors
The voltage drop V0 when the current (I) is injected is different. For example, in the case of a MOS transistor, the voltage drop V0 per one transistor Nn of the inverter 21 composed of the transistor Pn and the transistor Nn is about 0.7.
V, and the output circuit shown in FIG.
Since the voltage drop in the case of being composed of individual pieces is about 1.4 V, the difference between the chips can be discriminated.

【0013】本発明の半導体装置は、チップAは図1
(b)に示す出力回路を有し、チップBは図1(c)の
出力回路タイプを有する。
In the semiconductor device of the present invention, the chip A is shown in FIG.
The chip B has the output circuit shown in FIG. 1B, and the chip B has the output circuit type shown in FIG.

【0014】拡散工程および配線工程を終えた半導体基
板から良品チップを選別する場合、チップAおよびチッ
プBのそれぞれについて電気的特性を試験を行う。この
時、チップAについてはチップAに適合した試験条件で
試験を行い、チップBについてはチップBに適合した試
験条件で試験を行わなければならない。そこで、試験を
行うチップがAであるかBであるかをあらかじめ判別し
ておき、判別された結果に基づいてそれぞれの試験条件
で試験を行う。
When selecting non-defective chips from the semiconductor substrate that has undergone the diffusion process and the wiring process, the electrical characteristics of each of the chips A and B are tested. At this time, the chip A must be tested under the test conditions compatible with the chip A, and the chip B must be tested under the test conditions compatible with the chip B. Therefore, whether the chip to be tested is A or B is determined in advance, and the test is performed under each test condition based on the determined result.

【0015】図2にこの試験の流れを示す。まず、特定
の端子に接続された本発明によるトランジスタの電圧降
下を測定し、チップAかチップBかろ判別する。次にそ
れぞれに適した測定条件での試験を行い、良否の判定を
行う。このような流れのテストプログラムを自動テスタ
に設定しておくことにより、1つの工程での良否が判別
でいる。また、自動的にチップの判別を行うため、目視
で開始点を設定す必要がなくなり、同一基板上に不規則
に配置された2種類のチップでも開始点を指定すること
なく試験を行うことができる。
FIG. 2 shows the flow of this test. First, the voltage drop of the transistor according to the present invention connected to a specific terminal is measured to determine whether it is chip A or chip B. Next, a test is performed under measurement conditions suitable for each, and the quality is judged. By setting the test program having such a flow in the automatic tester, it is possible to judge the quality in one process. In addition, since the chips are automatically identified, it is not necessary to visually set the starting point, and even two types of chips randomly arranged on the same substrate can be tested without specifying the starting point. it can.

【0016】この実施例は、特定の端子の出力のトラン
ジスタ構成が異なるものとしたもの、または、空き端子
のトランジスタを用いたものである。
In this embodiment, the transistor configuration of the output of a specific terminal is different, or the transistor of an empty terminal is used.

【0017】マスタスライスのLSIは不特定多数のユ
ーザの回路を構成でき、出力端子において駆動能力の異
なる出力の構成が一致する可能性は非常に少ないことを
利用し、チップA,チップBにおいて同じ端子でも駆動
能力の異なる端子が存在する。従って、信号線として使
用する出力端子を用いてチップの判別を行う。
The LSI of the master slice can configure circuits of an unspecified number of users, and it is very unlikely that the configurations of outputs having different driving capabilities match at the output terminals. Some terminals have different driving capabilities. Therefore, the chip is identified using the output terminal used as the signal line.

【0018】ここではA,Bの2種類のチップについて
実施例を示しているが、トランジスタの組み合わせ、出
力端子の組み合わせにより多種類のチップについても対
応が可能である。また、不規則な配置に対しても対応が
可能である。
Although the embodiment is shown here for two types of chips A and B, various types of chips can be dealt with by combining transistors and combining output terminals. It is also possible to deal with irregular arrangements.

【0019】[0019]

【発明の効果】これらの説明で明らかなように本発明を
用いれば、同一基板上に異なる機能を有する複数のIC
チップを配しても容易に選別することができ、製造費用
の低減や検査の自動化に資する効果は大である。
As is apparent from the above description, by using the present invention, a plurality of ICs having different functions on the same substrate.
Even if chips are arranged, they can be easily selected, and the effects of reducing manufacturing costs and automating inspection are great.

【0020】例えば、1枚のウェハーで100個のチッ
プが取れ、チップA,チップB,およびチップCの良品
がそれぞれ30個,30個,40個必要な場合、従来の
方法であれば、3枚のウェハーを必要としたが、本発明
による方法では、1枚のウェハーでよいことになる。ま
た、抵抗を追加する方法の場合、少なくとも2本の端子
が抵抗用の端子のために使用できなくなったが、本発明
は空き端子を用いることにより端子の有効利用が可能と
なる。
For example, when 100 chips can be obtained from one wafer and 30, 30, 40 and non-defective products of chips A, B, and C are required, respectively, in the conventional method, 3 chips can be obtained. Although one wafer was required, the method according to the invention will only require one wafer. Further, in the case of the method of adding the resistance, at least two terminals cannot be used for the resistance terminals, but the present invention enables the effective use of the terminals by using the empty terminals.

【図面の簡単な説明】[Brief description of drawings]

【図1】CMOS型LSIにおける本発明の実施例の出
力端子の等価回路図である。
FIG. 1 is an equivalent circuit diagram of an output terminal of an embodiment of the present invention in a CMOS type LSI.

【図2】本発明の実施例をプロービングテストする場合
の流れ図である。
FIG. 2 is a flow chart when a probing test is performed on an embodiment of the present invention.

【図3】複数種の機能を持つチップ配列の例である。FIG. 3 is an example of a chip arrangement having a plurality of types of functions.

【符号の説明】[Explanation of symbols]

11 出力端子 21〜23 出力回路 P1,P2 P型MOSトランジスタ N1,N2 N型MOSトランジスタ A1〜An,B1〜Bn,C1〜Cn,D1,D2
LSI
11 output terminals 21-23 output circuit P1, P2 P-type MOS transistor N1, N2 N-type MOS transistor A1-An, B1-Bn, C1-Cn, D1, D2
LSI

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 半導体基板上に、あらかじめ定められた
位置または、同一の位置にある電極を有し、この電極に
所定の電圧源と入力信号を与えて所定の機能動作する半
導体チップの異なる機能を有する複数個が平面上に配置
された半導体装置において、前記電極間に前記機能毎に
対して異なる特性を有するトランジスタまたは接続の異
る抵抗素子とを備え、前記トランジスタのドレイン−ソ
ース間の電圧を測定し前記電圧値によりまたは前記抵抗
素子の抵抗値により前記平面上に配置された半導体チッ
プの前記半導体基板上の位置を認識することを特徴とす
る半導体装置。
1. A semiconductor chip having electrodes at predetermined positions or at the same position on a semiconductor substrate, and a predetermined voltage source and an input signal are applied to the electrodes to perform predetermined functions and different functions of a semiconductor chip. A plurality of semiconductor devices arranged on a plane, each of which has a transistor having different characteristics for each function or a resistive element having a different connection between the electrodes, and a voltage between a drain and a source of the transistor. Is measured and the position on the semiconductor substrate of the semiconductor chip arranged on the plane is recognized based on the voltage value or the resistance value of the resistance element.
JP7072815A 1995-03-30 1995-03-30 Semiconductor device Pending JPH08274176A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7072815A JPH08274176A (en) 1995-03-30 1995-03-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7072815A JPH08274176A (en) 1995-03-30 1995-03-30 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH08274176A true JPH08274176A (en) 1996-10-18

Family

ID=13500298

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7072815A Pending JPH08274176A (en) 1995-03-30 1995-03-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH08274176A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006054387A1 (en) * 2004-10-28 2006-05-26 Sharp Kabushiki Kaisha Camera shake correcting device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5244178A (en) * 1975-10-06 1977-04-06 Hitachi Ltd Semiconductor integrated circuit device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5244178A (en) * 1975-10-06 1977-04-06 Hitachi Ltd Semiconductor integrated circuit device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006054387A1 (en) * 2004-10-28 2006-05-26 Sharp Kabushiki Kaisha Camera shake correcting device

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