JPH0825830B2 - シリコン単結晶の製造装置 - Google Patents

シリコン単結晶の製造装置

Info

Publication number
JPH0825830B2
JPH0825830B2 JP2-513976A JP51397690A JPH0825830B2 JP H0825830 B2 JPH0825830 B2 JP H0825830B2 JP 51397690 A JP51397690 A JP 51397690A JP H0825830 B2 JPH0825830 B2 JP H0825830B2
Authority
JP
Japan
Prior art keywords
single crystal
silicon single
silicon
manufacturing apparatus
crystal manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2-513976A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO1991005891A1 (ja
JPH0825830B1 (cg-RX-API-DMAC7.html
Inventor
芳延 島
健治 荒木
寛 神尾
真 鈴木
Original Assignee
東芝セラミックス株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東芝セラミックス株式会社 filed Critical 東芝セラミックス株式会社
Priority to JP2-513976A priority Critical patent/JPH0825830B2/ja
Publication of JPWO1991005891A1 publication Critical patent/JPWO1991005891A1/ja
Publication of JPH0825830B1 publication Critical patent/JPH0825830B1/ja
Publication of JPH0825830B2 publication Critical patent/JPH0825830B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP2-513976A 1989-10-16 1990-10-12 シリコン単結晶の製造装置 Expired - Lifetime JPH0825830B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2-513976A JPH0825830B2 (ja) 1989-10-16 1990-10-12 シリコン単結晶の製造装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP1-268800 1989-10-16
JP26880089 1989-10-16
JP2-513976A JPH0825830B2 (ja) 1989-10-16 1990-10-12 シリコン単結晶の製造装置

Publications (3)

Publication Number Publication Date
JPWO1991005891A1 JPWO1991005891A1 (ja) 1991-10-03
JPH0825830B1 JPH0825830B1 (cg-RX-API-DMAC7.html) 1996-03-13
JPH0825830B2 true JPH0825830B2 (ja) 1996-03-13

Family

ID=26548488

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2-513976A Expired - Lifetime JPH0825830B2 (ja) 1989-10-16 1990-10-12 シリコン単結晶の製造装置

Country Status (1)

Country Link
JP (1) JPH0825830B2 (cg-RX-API-DMAC7.html)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NO148267C (no) * 1981-06-16 1983-09-07 Norsk Hydro As Diafragma for vannelektrolyse
JPH0633218B2 (ja) * 1987-12-08 1994-05-02 日本鋼管株式会社 シリコン単結晶の製造装置

Also Published As

Publication number Publication date
JPH0825830B1 (cg-RX-API-DMAC7.html) 1996-03-13

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