JPH08250021A - Manufacturing method for surface conduction electron emitting element and manufacture thereof - Google Patents

Abstract

PURPOSE: To accurately process the irregular conductive thin film of the surface conduction electron emitting element at the high speed by processing the conductive thin film while a focal point against the surface of the conductive thin film is being adjusted based on information on the surface irregularities of the conductive thin film. CONSTITUTION: A specimen 12 is set in a XY direction scanning mechanism 11, and the output of a laser oscillator 1 is set to a desired value by a control computer 13. Control signals are sent to a position control mechanism 9 from the control computer 13 in such a way that the XY direction scanning mechanism 11 is moved in accordance with a processing pattern. A laser beam 1a for measuring irregularities on the surface of the specimen is projected into optical sensors 8a and 8b, and the position control mechanism 9 selects a signal out of signals from the two optical sensors while the drive direction of the XY direction scanning mechanism 11 is being recognized. By this constitution, irregularities on the surface of the specimen is detected, and processing can thereby be carried out, in which each focal point of a laser beam 1b is aligned to irregularities on the surface of the specimen with an elevating mechanism 10 finely moved.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for manufacturing a surface conduction electron-emitting device using laser light.

[0002]

2. Description of the Related Art Conventionally, two types of electron emitters, a thermoelectron source and a cold cathode electron source, are known. The cold cathode electron source includes a field emission type (hereinafter abbreviated as FE type), a metal / insulating layer / metal type (hereinafter abbreviated as MIM type), a surface conduction type electron emitting device, and the like. Examples of FE type are WP Dyke & WWDolan, "F
ield emission ", Advance in Electron Physics, 8 89
(1956) or CASpindt, "Physical Properties of
thin-film field emission cathodes with molybdeniu
m ", J. Appl. Phys., 47 5248 (1976) and the like are known.

As an example of the MIM type, CAMead, "Operati
on tunneling emission devices ", J.Appl.Phys., 32 6
46 (1961) and the like are known.

As an example of the surface conduction electron-emitting device type,
MIElinson, Radio Eng. ElectronPhys., 10 1290 (196
5) etc. The surface conduction electron-emitting device utilizes a phenomenon in which electron emission occurs when a current is applied to a thin film having a small area formed on a substrate in parallel with the film surface. As the surface conduction electron-emitting device, one using a SnO ₂ thin film by Erinson et al., One using an Au thin film [G. Dittmer: "Thin Solid Films", 9 317 (1972)], I
n ₂ O ₃ / SnO ₂ thin film [M. Hartwell and
CGFonstad: "IEEE Trans. ED Conf", 519 (1975)], by carbon thin film [Hisa Araki et al .: Vacuum, Vol. 26, Vol.
No. 1, p. 22 (1983)] and the like are reported.

As a typical device configuration of these surface conduction electron-emitting devices, the above-mentioned M. The Hartwell device configuration is shown in FIG.

As shown in FIG. 15, the surface conduction electron-emitting device includes a substrate 1041 and a conductive thin film 1044 formed by sputtering a metal oxide thin film formed on the substrate 1041 into an H-shaped pattern by photolithography or the like. Then, the electron emitting portion 1045 is formed by an energization process called energization forming described later. The element electrode spacing L in the figure
Is set to 0.5 to 1 mm, and W'is set to 0.1 mm. Note that the position and shape of the electron emission portion 1045 are not definitive, and thus are shown as schematic diagrams.

Conventionally, in these surface conduction electron-emitting devices, the electron-emitting portion 1045 has generally been formed by conducting an energization process called energization forming in advance on the conductive thin film 1044 before emitting electrons. That is, the energization forming means a DC voltage or a very slow rising voltage, for example, 1 V across the conductive thin film 1044.
This is to form an electron-emitting portion 1045 in which the conductive thin film is locally destroyed, deformed, or denatured by applying and energizing about / minute, and which is in an electrically high resistance state. In the electron emitting portion 1045, a crack is generated in a part of the conductive thin film 1044, and electrons are emitted from the vicinity of the crack. The surface conduction electron-emitting device that has been subjected to the energization forming process is one in which a voltage is applied to the conductive thin film 1044 and a current is passed through the device so that electrons are emitted from the electron-emitting portion 1045.

Since the surface conduction electron-emitting device described above has a simple structure and is easy to manufacture, it has an advantage that a large number of devices can be arrayed over a large area. Therefore, various applications that can make full use of this feature are being researched. For example, a display device such as a charged beam source or an image forming apparatus can be used.

[0009]

One of the features of the surface conduction electron-emitting device as described above is that the structure is simple. In the conventional pattern formation of the conductive thin film,
This was performed using vacuum film formation, photolithography, and etching technology, which are one of the usual semiconductor manufacturing technologies.

In addition, there is a case where the laser processing is applied to the pattern formation of the conductive thin film, but it is necessary to process the sample surface having irregularities with high accuracy and at high speed.

When processing a sample surface having irregularities with a laser with high precision, it is necessary to focus the laser on the sample surface. In the conventional laser processing machine, the focus of the laser is often adjusted by focusing the CCD camera based on the image information obtained by the CCD camera or the like. Therefore, the focus adjustment speed is limited, and it is difficult to adjust the focus while processing.

In view of the above-mentioned problems of the prior art, the present invention is a surface conduction electron-emitting device using laser light for processing a conductive thin film of a surface conduction electron-emitting device having irregularities at high speed and with high accuracy. It is an object of the present invention to provide a manufacturing method and a manufacturing apparatus of.

[0013]

In order to achieve the above object, a first aspect of the invention is to form a conductive thin film on a substrate, and collect the laser light on the surface of the conductive thin film. After processing the conductive thin film into a predetermined pattern shape, forming an electron emitting portion that emits electrons, in a method of manufacturing a surface conduction electron-emitting device using laser light, the uneven information of the surface of the conductive thin film It is characterized in that the conductive thin film is processed by detecting with a second laser light and adjusting the focus of the laser light on the surface of the conductive thin film based on the unevenness information.

In the method of manufacturing a surface conduction electron-emitting device using this laser beam, the second laser beam is applied to the surface of the conductive thin film in the traveling direction of the processing point by the laser beam by a split mirror. A method of detecting unevenness information on the surface of the conductive thin film by causing a second laser light reflected on the surface of the conductive thin film to enter an optical sensor, or a swing mechanism of the second laser light Irregularity information on the surface of the conductive thin film by irradiating the surface of the conductive thin film in the traveling direction of the processing point with the laser light and making the second laser light reflected by the surface of the conductive thin film incident on the optical sensor. The method of detecting is considered.

In the case of the method as described above, it is preferable to obtain the second laser light by splitting the laser light and attenuating one of the split laser light to such an extent that the conductive thin film is not processed. .

Further, the apparatus for manufacturing a surface conduction electron-emitting device using laser light according to the second invention holds a substrate on which a conductive thin film to be a surface conduction electron-emitting device is formed,
And a scanning means for scanning in any direction in the same plane as the substrate, a laser oscillating means for oscillating a laser beam having a desired output, and the laser beam used for measurement with a first laser beam used for processing. Branching means for branching into the second laser light, an optical system for focusing the first laser light on the surface of the conductive thin film, and the conductive thin film processing the output of the second laser light. Using the attenuating means for attenuating to the extent that it is not attenuated and the second laser light whose output is attenuated by the attenuating means, the unevenness information of the surface of the conductive thin film in the traveling direction of the processing point by the first laser light is detected. Based on the detection means and the unevenness information from the detection means,
And an elevating means for elevating and lowering the optical system in order to focus the first laser beam by the optical system on the surface of the conductive thin film.

The detecting means irradiates the surface of the conductive thin film in the traveling direction of the processing point by the first laser light with the second laser light whose output is attenuated by the attenuator; Second reflection on the surface of the conductive thin film
Optical sensor for receiving the laser light of 1) and obtaining information on the unevenness of the surface of the conductive thin film in the traveling direction of the processing point by the first laser light.

Further, as the irradiation means, a split mirror or a swing mechanism for changing the incident direction of the second laser light whose output is attenuated by the attenuator according to the traveling direction of the processing point by the first laser light. Can be considered.

Further, it is conceivable to use a linear motor or a piezoelectric element as the elevating means.

[0020]

In the present invention, when the conductive thin film having irregularities is processed into a predetermined pattern shape by laser light, the second laser light is used in advance to detect irregularity information of the conductive thin film, and the irregularity information is detected. By adjusting the focus of the laser light on the surface of the conductive thin film based on, there is no defocus due to the unevenness of the conductive thin film, the processing groove width becomes constant,
High-speed and accurate machining is achieved.

Further, the laser beam is branched, and one of the branched laser beams is attenuated to such an extent that the conductive thin film is not processed to obtain the second laser beam, so that the apparatus can be downsized. Becomes

[0022]

EXAMPLE A surface-conduction type electron-emitting device is arranged in parallel in a method of arranging the surface-conduction type electron-emitting devices, and both ends of each device are connected by wiring in a ladder-type arrangement (hereinafter, "ladder-type arrangement electron source"). Substrate)) and a simple matrix arrangement in which X-direction wiring and Y-direction wiring are connected to a pair of device electrodes of a surface conduction electron-emitting device (hereinafter referred to as “matrix-type arrangement electron source substrate”). . An image forming apparatus having a ladder type electronic substrate requires a control electrode (grid electrode) which is an electrode for controlling the flight of electrons from the electron-emitting device.

Embodiments of the present invention will be described below with reference to the drawings.

(First Embodiment) FIG. 1 is a view best showing a first embodiment of a manufacturing apparatus for suitably carrying out the method of manufacturing a surface conduction electron-emitting device according to the present invention.

As shown in FIG. 1, the manufacturing apparatus of the present embodiment is a laser processing machine used for forming a conductive thin film of a surface conduction electron-emitting device as a sample 12, which is a laser processing machine. Have. Further, it is roughly divided into a system for adjusting a laser focus and a system for processing a sample, and these two systems have a partial reflection mirror 2 for branching the laser light emitted from the laser oscillator 1.

The system for adjusting the focus of the laser includes an attenuator 6 composed of an ND filter for attenuating the laser light 1a reflected by the partial reflection mirror 2 to the extent that the sample 12 is not processed, and an attenuator as a detecting means. The laser beam attenuated by 6 is split in the X and Y directions and is applied to the sample 12, and the split mirror 7 of the irradiation means and the laser beams in the X and Y directions from the split mirror 7 are reflected and incident on the sample 12. And optical sensors 8a and 8b having an optical system. By detecting the signal change of the optical sensors 8a and 8b in such a system, the surface unevenness information of the sample 12 can be detected.

On the other hand, the sample processing system is an optical system.
A total reflection mirror 3 that totally reflects the laser light transmitted through the partial reflection mirror 2, and a slit 4 that allows the laser light 1b reflected by the total reflection mirror 3 to pass in a predetermined shape.
It is composed of an objective lens 5 for focusing the laser light passing through the slit 4 on the sample 12.

The objective lens 5 is attached by an elevating mechanism 10 and can be finely moved in the Z direction by a position control mechanism 9 based on a change in the Z direction position detected by the optical sensors 8a and 8b.

The sample 12 is fixed on the XY scanning mechanism 11 and can be scanned in the XY directions by the position control mechanism 9.

The laser oscillator 1 and the position control mechanism 9 are controlled by the control computer 13 so that an arbitrary pattern can be drawn.

The operation of processing the sample 12 using the laser processing machine having the above-described structure will be described.

The sample 12 is set on the XY scanning mechanism 11, and the control computer 13 sets the output of the laser oscillator 1 to a desired value.

Next, a control signal is sent from the control computer 13 to the position control mechanism 9 so that the XY scanning mechanism 11 moves according to the processing pattern.

While the XY direction scanning mechanism 11 is driven, the laser beam 1a for measuring the unevenness of the sample surface is incident on the optical sensors 8a and 8b, and the position control mechanism 9 moves to the X direction.
By recognizing the driving direction of the Y-direction scanning mechanism 11, 2
Select the signals from the two light sensors.

As a result, it is possible to detect the unevenness information of the sample surface which coincides with the processing direction, and by finely moving the elevating mechanism 10, it is possible to perform processing in which the unevenness of the sample surface has the focus of the laser beam 1b. .

Laser processing adapted to the unevenness of the sample surface is effective in manufacturing a surface conduction electron-emitting device.

In this embodiment, a matrix type electron source substrate having a surface conduction electron-emitting device manufactured by using the above laser beam machine will be described as an example.

First, as will be described later, on the glass substrate as shown in FIG. 9, the X-direction wiring 92, the insulating layer (not shown),
And the Y-direction wiring 93 was produced by a printing method.

On top of that, organic palladium (Okuno Pharmaceutical Co., Ltd.)
Manufactured, ccp-4230) is applied to the entire surface, and the temperature is 2 at 300 ° C.
After firing for 0 minutes, a conductive thin film made of a fine particle film containing Pd as a main component was produced.

Next, a YAG second harmonic laser beam machine with a Q switch (wavelength 532n) having the same configuration as that shown in FIG.
In (m), the manufactured electron source substrate 91 was set on the XY direction scanning mechanism 11, and the conductive thin film applied on the insulating layer was processed.

Specifically, the Q switch frequency of the laser is 1 kHz, the average output is 5 W, the slit 4 and the objective lens 5 make the laser beam diameter on the sample surface 10 on each side.
The sample feed rate is 10 mm / sec.
And Further, the laser beam 1a for measuring the unevenness is attenuator 6
By passing through (ND filter in this example), the work surface was attenuated and irradiated so as not to damage it sufficiently.

A linear motor was used as a lifting mechanism for the objective lens 5, and focus adjustment was performed based on the signal from the position control mechanism 9.

In this embodiment, the X direction is from left to right in FIG.
In the Y direction, processing is performed when the sample moves from the back to the front in FIG. 1, so one optical sensor is provided,
When processing is performed even when the reciprocating operation is performed, optical sensors may be provided in front, back, left and right of the processing laser beam 1b.

FIG. 2 is an enlarged view of the processed surface, which is designated by reference numeral 21.
Indicates wiring, reference numeral 22 indicates an insulating layer, and reference numeral 23 indicates a conductive thin film.

As shown in FIG. 2, the tip of the processing laser beam 1b (forward of the processing direction) is scanned by the laser beam 1a for measuring unevenness.

The unevenness of one step of the matrix type electron source substrate used for processing this time was about 20 μm, and the processing could be performed while the focus of the processing laser beam 1b was sufficiently focused.

Subsequently, energization forming was performed by applying a voltage as shown in FIG. 7, which will be described later. At this time, as a forming voltage waveform, a rectangular wave having a pulse width T1 of 1 msec and a pulse interval T2 of 10 msec and a peak value of 15 V was used, and the forming voltage waveform was performed. By this energization treatment, the conductive thin film 23 was locally destroyed, deformed or altered, and the electron emitting portion 45 (see FIG. 4) having a changed structure was obtained.

A matrix-type arrangement electron source substrate having the surface conduction electron-emitting device is manufactured in this manner, and as will be described later, as shown in FIG. 10, the face plate 106, the support frame 102, the rear plate 101 and the like are sealed. An image forming apparatus was produced by wearing the same.

In this embodiment, a linear motor is used for the raising and lowering mechanism of the objective lens 5, but the present invention is not limited at all, and the same result can be obtained by using a piezoelectric element.

By processing the matrix-type arranged electron source substrate using the laser beam machine of the present invention, an electron source substrate with less processing unevenness could be produced in a short time.

(Second Embodiment) FIG. 3 is a view best showing the second embodiment of the manufacturing apparatus for suitably carrying out the method of manufacturing the surface conduction electron-emitting device of the present invention. In this figure, the same components as those of the first embodiment are designated by the same reference numerals, and the description of the same components as those of the first embodiment will be omitted here.

In this embodiment, instead of the split mirror of the first embodiment, a laser beam whose power is attenuated by an attenuator 6 as shown in FIG. , And a swing mechanism 7a that swings in the Y direction.
Therefore, in the first embodiment, the laser light 1a is always incident on the optical sensors 8a and 8b, but in the present embodiment, the XY directions are selected according to the traveling direction of the processing point by the laser.

In this embodiment, a ladder type electron source substrate having a surface conduction electron-emitting device manufactured by using the above laser beam machine will be described as an example.

First, as will be described later, as shown in FIG. 13, the wiring 132 and the insulating layer (not shown) were formed on the glass substrate by a printing method.

On top of that, organic palladium (Okuno Pharmaceutical Co., Ltd.)
Manufactured, ccp-4230) is applied to the entire surface, and the temperature is 2 at 300 ° C.
After firing for 0 minutes, a conductive thin film composed of a fine particle film containing Pd as a main component was produced.

Next, a YAG second harmonic laser beam machine with a Q switch (wavelength 532n) having the same configuration as that shown in FIG.
In (m), the produced electron source substrate 131 was set on the XY scanning mechanism 11, and the conductive thin film coated on the insulating layer was processed.

Specifically, the Q switch frequency of the laser is 1 kHz, the average output is 5 W, the slit 4 and the objective lens 5 allow the laser beam diameter on the sample surface to be 10 on a side.
The sample feed rate is 10 mm / sec.
And Further, the laser beam 1a for measuring the unevenness is attenuator 6
By passing through (ND filter in this example), the work surface was attenuated and irradiated so as not to damage it sufficiently.

A piezoelectric element (manufactured by Tokin) was used as an elevating mechanism for the objective lens 5, and focus adjustment was performed based on a signal from the position control mechanism 9.

In this embodiment, the X direction is from left to right in FIG.
In the Y direction, processing is performed when the sample moves from the back to the front in FIG. 1, so one optical sensor is provided,
When processing is performed even when the reciprocating operation is performed, optical sensors may be provided in front, back, left and right of the processing laser beam 1b.

The unevenness in one step of the ladder-type electron source substrate used for processing this time was about 20 μm, and the processing could be performed while the focus of the processing laser beam 1b was sufficiently focused.

Subsequently, energization forming was performed by applying a voltage as shown in FIG. 7, which will be described later. At this time, as a forming voltage waveform, a rectangular wave having a pulse width T1 of 1 msec and a pulse interval T2 of 10 msec and a peak value of 15 V was used, and the forming voltage waveform was performed. By this energization treatment, the conductive thin film 23 is locally destroyed, deformed or altered, and the structure of the electron emitting portion 45 is changed.
(See FIG. 4) was obtained.

A ladder-type arrangement electron source substrate having the surface conduction electron-emitting device is produced in this manner, and as will be described later, as shown in FIG. 14, the face plate 106 and the support frame 1 are provided.
No. 02, the rear plate 101, etc. were sealed and the image forming apparatus was produced.

In the present embodiment, a piezoelectric element was used for the lifting mechanism of the objective lens 5, but there is no limitation whatsoever and similar results could be obtained using a linear motor.

By processing the ladder-type electron source substrate using the laser beam machine of the present invention, it was possible to produce an electron source substrate with less processing unevenness in a short time.

There are basically two types of surface conduction electron-emitting devices that can be used in the present invention: a flat surface conduction electron-emitting device and a vertical surface conduction electron-emitting device.

FIG. 4 shows the structure of a flat surface conduction electron-emitting device, (a) is a schematic plan view and (b) is a sectional view. FIG. 5 is a process chart showing an example of a method of manufacturing the surface conduction electron-emitting device shown in FIG.

As shown in FIG. 4, the surface conduction electron-emitting device includes an insulating substrate 41, and on the substrate 41,
The device electrodes 42 and 43 are arranged at regular intervals L, respectively. A conductive thin film 44 is formed between the device electrodes 42 and 43 on the substrate 41. Conductive thin film 44
An electron emitting portion 45 that emits electrons is formed in the.

As the substrate 41, quartz glass, glass having a small content of impurities such as Na, soda lime glass, a glass substrate having SiO ₂ formed on its surface, and a ceramic substrate such as alumina are used.

As the material of the device electrodes 42 and 43, a general conductor is used, and for example, Ni, Cr, Au, Mo,
A printed conductor composed of a metal or alloy such as W, Pt, Ti, Al, Cu and Pd, and a metal or metal oxide such as Pd, Ag, Au, RuO ₂ , Pd-Ag and glass, and In.
It is appropriately selected from transparent conductors such as ₂ O ₃ —SnO ₂ and semiconductor materials such as polysilicon.

The element electrode spacing L is preferably several hundreds of angstroms to several hundreds of micrometers. Further, it is desirable that the voltage applied between the device electrodes is low, and since it is required to produce the film with good reproducibility, the particularly preferred device electrode interval is several micrometers to several tens of micrometers.

The device electrode length W is preferably several micrometers to several hundreds of micrometers in view of the resistance value of the electrodes and electron emission characteristics, and the film thickness of the device electrodes 42, 43 is preferably several micrometers to several micrometers.

In addition to the structure shown in FIG. 4, the conductive thin film 44 and the device electrodes 42 and 43 may be formed on the substrate 41 in this order.

The conductive thin film 44 is particularly preferably a fine particle film composed of fine particles in order to obtain good electron emission characteristics.
The film thickness is appropriately set according to the step coverage to the device electrodes 42 and 43, the resistance value between the device electrodes 42 and 43, and the energization forming condition described later, etc., but preferably from several angstroms to several thousand angstroms,
Particularly preferred is 10 angstroms to 500 angstroms. The sheet resistance value is 10 3 to 10 7 ohm / □.

The material forming the conductive thin film 44 is P
d, Pt, Ru, Ag, Au, Ti, In, Cu, C
Metals such as r, Fe, Zn, Sn, Ta, W and Pb, Pd
O, SnO ₂ , In ₂ O ₃ , oxides such as PbO and Sb ₂ O ₃ , HfB ₂ , ZrB ₂ , LaB ₆ , CeB ₆ , YB
₄ , boride such as GdB ₄ , TiC, ZrC, HfC, T
Carbides such as aC, SiC, WC, TiN, ZrN, Hf
Examples thereof include nitrides such as N, semiconductors such as Si and Ge, and carbon.

The fine particle film described here is a film in which a plurality of fine particles are aggregated, and its fine structure is not only a state in which the fine particles are dispersed and arranged but also a state in which the fine particles are adjacent to each other or overlap each other (islands). The particle size of the fine particles is from several angstroms to several thousand angstroms, preferably from 10 angstroms to 200 angstroms.

The electron emitting portion 45 is a high resistance crack formed in a part of the conductive thin film 44, and is formed by energization forming or the like. Further, the cracks may have conductive fine particles having a particle diameter of several angstroms to several hundred angstroms. The conductive fine particles contain at least a part of the elements forming the conductive thin film 44. Further, the electron emitting portion 45 and the conductive thin film 44 in the vicinity thereof may contain carbon or a carbon compound.

An example of a method of manufacturing the surface conduction electron-emitting device will be described. In FIG. 5, soda lime glass is used as the insulating substrate 41, and the device electrodes 42 and 43 are formed on the substrate 41 by using Ni. did. At this time, the device electrode interval L was 3 μm, the device electrode width W was 500 μm, and the device electrode thickness was 1000 Å.

Next, organopalladium (ccp-4230: manufactured by Okuno Chemical Industries Co., Ltd.) is placed at desired positions including on the device electrodes.
After applying the containing solution, heat treatment is performed at 300 ° C. for 10 minutes to obtain palladium oxide (PdO) fine particles (average particle diameter:
A conductive thin film 44 made of 70Å) was formed. This time,
The width W ′ of the conductive thin film 44 was 300 μm.

FIG. 6 is a schematic view showing the structure of a basic vertical surface conduction electron-emitting device. In FIG.
The same reference numerals are given to the same components as.
Reference numeral 46 indicates a step forming portion.

The substrate 41, the device electrodes 42 and 43, the conductive thin film 44, and the electron emitting portion 45 can be made of the same material as that of the above-mentioned flat surface conduction electron emitting device, and the step forming portion 46 is made of an insulating material. The film thickness of the step forming portion 46 made of a material corresponds to the device electrode interval L of the flat surface conduction electron-emitting device described above. The spacing is tens of micrometers rather than hundreds of angstroms. The distance can be controlled by the manufacturing method of the step forming portion and the voltage applied between the device electrodes, but it is preferably several hundred angstroms to several micrometers.

Since the conductive thin film 44 is formed after the device electrodes 42 and 43 and the step forming portion 46 are formed, the device electrode 4 is formed.
It is laminated on 2,43. Although the electron emitting portion 45 is shown to be linearly formed in the step forming portion 46 in FIG. 6, the shape and position are not limited to this, depending on the production conditions, energization forming conditions, and the like. Absent.

The energization forming energizes between the device electrodes 42 and 43 by using a power source (not shown) to locally break, deform or alter the conductive thin film 44 to form a portion having a changed structure. is there. The part where the structure is locally changed is called an electron emitting part 45 (see FIG. 5C). FIG. 7 shows an example of the voltage waveform of energization forming.

A pulse waveform is particularly preferable as the voltage waveform, and when the voltage pulse having a constant pulse peak value is continuously applied (see FIG. 7A), the pulse peak value is increased while
In some cases, a voltage pulse is applied (see FIG. 7B). First, a case where the pulse peak value is a constant voltage will be described.

In FIG. 7A, T1 and T2 are the pulse width and the pulse interval of the voltage waveform. T1 is 1 microsecond to 10 milliseconds and T2 is 10 microseconds to 100 milliseconds. (Peak voltage during energization forming) is appropriately selected according to the form of the surface conduction electron-emitting device, and is set to a suitable vacuum degree, for example, in a vacuum atmosphere of about 10 −5 torr for several seconds to several tens of minutes. Apply. The waveform applied between the electrodes of the element is not limited to the triangular wave, and a desired waveform such as a rectangular wave may be used.

T1 and T2 in FIG. 7B are the same as those in FIG. 7A, and the crest value of the triangular wave (peak voltage during energization forming) is increased by, for example, about 0.1 V step. Apply in a simple vacuum atmosphere.

In the energization forming process in this case, the element current is measured during the pulse interval T2 at a voltage that does not locally damage or deform the conductive thin film 4, for example, a voltage of about 0.1 V, and the resistance is measured. The value is obtained, and when the resistance is 1 M ohm or more, the energization forming is completed.

Next, it is desirable to perform a process called an activation process on the element for which the energization forming has been completed. The activation process is, for example, 10 −4 to 10 −5 tor torr.
Similar to energization forming, this is a process of repeatedly applying a voltage pulse with a constant pulse peak value, and carbon and carbon compounds derived from organic substances present in vacuum are deposited on a conductive thin film. This is a process of significantly changing the current If and the emission current Ie. The activation process is completed, for example, when the emission current Ie is saturated while measuring the device current If and the emission current Ie. Further, it is preferable that the applied voltage pulse is an operation drive voltage.

Here, the carbon or carbon compound is graphite (both single and polycrystalline) or amorphous carbon (a mixture of amorphous carbon and polycrystalline graphite), and its film thickness is It is preferably 500 angstroms or less, more preferably 300 angstroms or less.

It is preferable to place the electron-emitting device thus produced in an energization forming step and an activation step in an atmosphere having a vacuum degree higher than the vacuum degree to drive the electron-emitting element. In addition, it is desirable to operate after heating to 80 ° C. to 150 ° C. in an atmosphere of a higher degree of vacuum.

The vacuum degree higher than the vacuum degree in the energization forming step and the activation step is, for example, about −10.
The degree of vacuum is a sixth power or more, more preferably an ultrahigh vacuum system, and a degree of vacuum in which carbon or a carbon compound is hardly newly deposited on the conductive thin film. By doing so, the device current If and the emission current Ie can be stabilized.

FIG. 8 is a schematic configuration diagram of a measurement / evaluation apparatus for measuring the electron emission characteristics of the element having the configuration shown in FIG. 8, the same symbols as those in FIG. 4 indicate the same things. Further, reference numeral 81 is a power source for applying the device voltage Vf to the electron-emitting device, and reference numeral 80 is the device electrode 4.
An ammeter for measuring a device current If flowing through the conductive thin film 44 between the electrodes 2 and 43, a reference numeral 84 is an anode electrode for capturing an emission current Ie emitted from an electron emitting portion of the device, and a reference numeral 83 is an anode electrode. A high-voltage power supply for applying a voltage to 84, reference numeral 82 is an ammeter for measuring the emission current Ie emitted from the electron emission portion 45 of the device, reference numeral 85
Is a vacuum device, and reference numeral 86 is an exhaust pump.

Next, an image forming apparatus using the surface conduction electron-emitting device obtained by the present invention will be described.

The electron source substrate used in the image forming apparatus is formed by arranging a plurality of surface conduction electron-emitting devices on the substrate.

The configuration of the electron source constructed based on this principle will be described below with reference to FIG. In FIG.
Reference numeral 91 is an electron source substrate, reference numeral 92 is X-direction wiring, reference numeral 9
3 is a Y-direction wiring, 94 is a surface conduction electron-emitting device,
Reference numeral 95 indicates a connection. The surface conduction electron-emitting device 94 may be either the flat type or the vertical type described above.

In FIG. 9, the substrate used as the electron source substrate 91 is the above-mentioned glass substrate or the like, and its shape is appropriately set according to the application.

The m X-direction wirings 92 are Dx1 and Dx.
2, ... Dxm, the Y-direction wiring 93 is Dy1,
Dy2, ... Dyn n wirings.

The material, the film thickness, and the wiring width are appropriately set so that a substantially uniform voltage is supplied to a large number of surface conduction elements. These m X-direction wirings 92 and n Y-direction wirings 9
The layers 3 are electrically separated by an interlayer insulating layer (not shown) to form a matrix wiring (m and n are both positive integers).

An interlayer insulating layer (not shown) is formed in a desired region on the entire surface or a part of the substrate 91 on which the X-direction wiring 92 is formed. The X-direction wiring 92 and the Y-direction wiring 93 are respectively drawn out via external terminals.

Further, the device electrodes (not shown) of the surface conduction electron-emitting device 94 are electrically connected to the m X-direction wirings 92 and the n Y-direction wirings 93 by connection wires 95.

The surface conduction electron-emitting device may be formed either on the substrate or on an interlayer insulating layer (not shown).

The X-direction wiring 9 will be described later in detail.
2 is electrically connected to a scanning signal generating means (not shown) for applying a scanning signal for scanning a row of the surface conduction electron-emitting devices 94 arranged in the X direction according to an input signal.

On the other hand, a modulation signal (not shown) for applying a modulation signal for modulating each row of the surface conduction electron-emitting devices 94 arranged in the Y direction according to an input signal to the Y-direction wiring 93. It is electrically connected to the generating means.

Further, the drive voltage applied to each element of the surface conduction electron-emitting device is supplied as a difference voltage between the scanning signal applied to the element and the modulation signal.

In the above structure, individual elements can be selected and driven independently with simple matrix wiring.

Next, an image forming apparatus using the matrix type arrangement electron source substrate produced as described above will be described with reference to FIGS. 10, 11 and 12. 10 is a basic configuration diagram of the image forming apparatus, FIG. 11 is a fluorescent film, and FIG.
Reference numeral 2 denotes a block diagram of a drive circuit for displaying in accordance with an NTSC television signal, and represents an image forming apparatus including the drive circuit.

In FIG. 10, reference numeral 91 is an electron source substrate in which an electron-emitting device is formed on the substrate, reference numeral 101 is a rear plate on which the electron source substrate 91 is fixed, and reference numeral 106 is a glass substrate 103 on the inner surface of which a fluorescent film 104 and a metal are formed. A face plate on which the back 105 and the like are formed, reference numeral 102 is a support frame,
Reference numeral 101 indicates a rear plate, and these members constitute the envelope 108.

In FIG. 10, reference numeral 94 corresponds to the electron emitting portion in FIG. Reference numerals 92 and 93 indicate the X-direction wiring and the Y-direction wiring connected to the pair of device electrodes of the surface conduction electron-emitting device.

The envelope 108 is composed of the face plate 106, the support frame 102, and the rear plate 101 as described above. The rear plate 101 is mainly the electron source substrate 9
1 is provided for the purpose of reinforcing the strength of No. 1, the separate rear plate 101 is unnecessary when the electron source substrate 91 itself has sufficient strength, and the support frame 10 is directly attached to the electron source substrate 91.
2 may be provided, and the face plate 106, the support frame 102, and the electron source substrate 91 may constitute the envelope 108. Furthermore, the face plate 106 and the rear plate 101
An atmospheric pressure resistant support member called a spacer is installed between the envelope 108 having sufficient strength against atmospheric pressure.
You can also

In FIG. 11, reference numeral 112 indicates a phosphor. In the case of monochrome, the phosphor 112 is composed of only the phosphor, but in the case of a color phosphor film, it is composed of a black conductive material 111 called a black stripe or a black matrix depending on the arrangement of the phosphor and the phosphor 112. In the case of color display, the purpose of providing the black stripes and the black matrix is to make the color mixture and the like inconspicuous by blackening the separately-applied portions between the phosphors 112 of the three primary color phosphors and the external light on the phosphor film 104. This is to suppress a decrease in contrast due to reflection. The material of the black stripe is not limited to the commonly used material containing graphite as a main component, but is not limited to this as long as it is a material having conductivity and little light transmission and reflection.

As a method for applying the phosphor to the glass substrate 103, a precipitation method or a printing method is used regardless of monochrome or color.

A metal back 105 (see FIG. 10) is usually provided on the inner surface side of the fluorescent film 104 (see FIG. 10). The purpose of the metal back is to improve the brightness by specularly reflecting the light toward the inner surface side of the phosphor emission toward the face plate 106 side, to act as an electrode for applying an electron beam acceleration voltage, This is to protect the phosphor from damage due to the collision of negative ions generated inside the container. The metal back can be manufactured by performing a smoothing process (usually called filming) on the inner surface of the fluorescent film after manufacturing the fluorescent film, and then depositing Al (aluminum) by vacuum evaporation or the like.

On the face plate 106, a transparent electrode (not shown) may be provided on the outer surface side of the fluorescent film 104 in order to further enhance the conductivity of the fluorescent film 104.

The envelope 108 is provided with an exhaust pipe (not shown)
The degree of vacuum is set to about 0 ^-7 torr and sealing is performed. Further, a getter process may be performed in order to maintain the degree of vacuum after the envelope 108 is sealed. This is the envelope 108
Immediately before or after the sealing is performed by a heating method such as resistance heating or high-frequency heating to heat a getter arranged at a predetermined position (not shown) in the envelope 108 to form a vapor deposition film. is there. The getter usually contains Ba or the like as a main component, and due to the adsorption action of the deposited film, for example, 1 × 10 ⁻⁵ t
The degree of vacuum of orr or 1 × 10 ⁻⁷ torr is maintained. The steps after forming the surface conduction electron-emitting device are appropriately set.

Next, referring to the block diagram of FIG. 12, a schematic structure of a drive circuit for displaying a television on the basis of an NTSC system television signal in an image forming apparatus constructed by using a matrix type electron source substrate will be described. explain. In FIG. 12, reference numeral 121 is the display panel, and reference numeral 1
22 is a scanning circuit, 123 is a control circuit, 124 is a shift register, 125 is a line memory, 12
Reference numeral 6 denotes a sync signal separation circuit, reference numeral 127 denotes a modulation signal generator, and Vx and Va are DC voltage sources.

The functions of the respective parts will be described below. First, the display panel 121 includes terminals Dox1 to Doxm and a terminal D.
It is connected to an external electric circuit via oy1 to Doyn and the high voltage terminal Hv. Among them, the terminals Dox1 to Doxm sequentially drive the electron sources provided in the image forming apparatus, that is, the surface conduction electron-emitting devices arranged in a matrix of M rows and N columns matrix by row (N elements). A scanning signal for application is applied.

On the other hand, a modulation signal for controlling the output electron beam of each element of the surface conduction electron-emitting devices of one row selected by the scanning signal is applied to the terminals Dy1 to Dyn. Further, from the DC voltage source Va to the high voltage terminal Hv,
For example, a direct current voltage of 10 [kV] is supplied, which is an accelerating voltage for giving enough energy to excite the phosphor to the electron beam output from the surface conduction electron-emitting device.

Next, the scanning circuit 122 will be described. The circuit is provided with M switching elements therein (schematically shown by S1 to Sm in the figure), and each switching element is an output voltage of the DC voltage source Vx or 0.
One of [V] (ground level) is selected and electrically connected to the terminals Dx1 to Dxm of the display panel 121. Each of the switching elements S1 to Sm operates based on the control signal Tscan output from the control circuit 123, but can be actually configured by combining switching elements such as FETs.

The DC voltage source Vx determines that the driving voltage applied to an unscanned element is equal to or lower than the electron emission threshold voltage based on the characteristics (electron emission threshold voltage) of the surface conduction electron-emitting element. It is set to output a constant voltage such that

Further, the control circuit 123 has a function of matching the operations of the respective parts so that an appropriate display is performed on the basis of an image signal inputted from the outside. The synchronization signal Tsyn sent from the synchronization signal separation circuit 126 described next
Based on c, Tscan, Tsft, and Tmry control signals are generated for each unit.

The sync signal separation circuit 126 is a circuit for separating a sync signal component and a luminance signal component from an externally input NTSC television signal, and can be constructed by using a frequency separation (filter) circuit. The sync signal separated by the sync signal separation circuit 126 is composed of a vertical sync signal and a horizontal sync signal, as is well known, but is shown here as a Tsync signal for convenience of description. on the other hand,
The luminance signal component of the image separated from the television signal is referred to as a DATA signal for convenience, but the signal is the shift register 12
4 is input.

The shift register 124 is for serially / parallel converting the DATA signals serially input in time series for each line of the image, and operates based on the control signal Tsft sent from the control circuit 123. (That is, the control signal Tsft is the same as the shift register 12
In other words, it may be said that the shift clock is four. ). The data of one line of the serial / parallel converted image (corresponding to the driving data of N electron-emitting devices) is 1d.
It is output from the shift register 124 as N parallel signals of 1 to 1dn.

The line memory 125 is a storage device for storing data for one line of an image only for a required time,
The contents of Id1 to Idn are appropriately stored according to the control signal Tmry sent from the control circuit 123. The stored contents are output as Id'l to Id'n and input to the modulation signal generator 127.

The modulation signal generator 127 outputs the image data I
A signal source for appropriately driving and modulating each of the surface conduction electron-emitting devices according to each of d'1 to Id'n, and an output signal of the signal source from the surface conduction electrons in the display panel 121 through the terminals Doy1 to Doyn. Applied to the emitting element.

The electron-emitting device according to the present invention has an emission current I
It has the following basic characteristics for e. That is, the electron emission has a clear threshold voltage Vth, and the electron emission occurs only when a voltage equal to or higher than Vth is applied.

For a voltage above the electron emission threshold, the emission current also changes in accordance with the change in the voltage applied to the device. The value of the electron emission threshold voltage Vth and the degree of change of the emission current with respect to the applied voltage may change by changing the material, configuration, and manufacturing method of the electron emitting element. I can say.

That is, when a pulsed voltage is applied to this element, for example, electron emission does not occur even if a voltage below the electron emission threshold is applied, but when a voltage above the electron emission threshold is applied, the electron beam is emitted. Is output. At that time, first, it is possible to control the intensity of the output electron beam by changing the peak value Vm of the pulse. Second, it is possible to control the total amount of charges of the electron beam output by changing the pulse width Pw.

Therefore, as a method of modulating the electron-emitting device in accordance with the input signal, there are a voltage modulation method, a pulse width modulation method and the like. To implement the voltage modulation method, the modulation signal generator 127 is fixed. A circuit of a voltage modulation system is used that generates a voltage pulse of a length but appropriately modulates the peak value of the pulse according to the input data.

In order to implement the pulse width modulation method, the modulation signal generator 127 generates a voltage pulse having a constant peak value, but a pulse which appropriately modulates the width of the voltage pulse according to the input data. A width modulation type circuit is used.

Through the series of operations described above, the image forming apparatus of the present invention can display television using the display panel 121. Although not particularly described in the above description, the shift register 124 and the line memory 125 may be of a digital signal type or an analog signal type, and the point is that serial / parallel conversion and storage of image signals are performed at a predetermined speed. It should be done.

When the digital signal type is used, it is necessary to convert the output signal DATA of the sync signal separation circuit 126 into a digital signal, which can be achieved by providing an A / D converter at the output section of 126. Further, in connection with this, the circuit used for the modulation signal generator 127 is slightly different depending on whether the output signal of the line memory 125 is a digital signal or an analog signal.

First, the case of digital signals will be described.
In the voltage modulation method, for example, a well-known D / A conversion circuit may be used as the modulation signal generator 127, and an amplification circuit or the like may be added if necessary.

In the case of the pulse width modulation method, the modulation signal generator 127 compares the output value of the memory with the output value of the counter and the counter for counting the number of waves output from the oscillator, for example. It can be configured by using a circuit in which comparators (comparators) are combined. If necessary, an amplifier for voltage-amplifying the pulse-width-modulated modulation signal output from the comparator up to the drive voltage of the surface conduction electron-emitting device may be added.

Next, the case of analog signals will be described.
In the voltage modulation method, for the modulation signal generator 127, for example, an amplifier circuit using a well-known operational amplifier may be used, and a level shift circuit or the like may be added if necessary. In the case of the pulse width modulation method, for example, a well-known voltage controlled oscillation circuit (VCO) may be used, and an amplifier for amplifying the voltage to the drive voltage of the surface conduction electron-emitting device may be added if necessary. May be.

In the image forming apparatus completed as described above, each of the electron-emitting devices has terminals outside the container Dox1 to Dx.
Electrons are emitted by applying a voltage through oxm, Doy1 to Doyn, and a high voltage is applied to the metal back 105 or the transparent electrode (not shown) through the high voltage terminal Hv to accelerate the electron beam and cause the fluorescent film 104 to reach the fluorescent film 104. An image can be displayed by colliding, exciting and emitting light.

The structure described above is a schematic structure necessary for manufacturing a suitable image forming apparatus used for display and the like, and is not limited to the detailed contents described above such as materials of respective members. , Is appropriately selected to suit the application of the image forming apparatus. Further, although the NTSC system is given as an example of the input signal, the input signal is not limited to this, and PAL, SECA
Various methods such as the M method may be used, or a TV signal (for example, a high-definition TV such as the MUSE method) including a number of scanning lines may be used.

Next, the above-mentioned ladder type electron source substrate and the image forming apparatus using the same will be described with reference to FIGS.

In FIG. 13, reference numeral 130 indicates an electron source substrate, reference numeral 131 indicates an electron-emitting device, and reference numeral 132 indicates Dx1 to Dx1.
Dx10 indicates a common wiring connected to the electron-emitting device. The electron emitting device 131 is provided on the substrate 130.
A plurality are arranged in parallel in the X direction. (This is called an element row). A plurality of this element row is arranged on the substrate to form a ladder type electron source substrate. By appropriately applying a drive voltage between the common wirings of each element row, each element row can be independently driven. That is, a voltage equal to or higher than the electron emission threshold may be applied to the element row that emits the electron beam, and a voltage equal to or lower than the electron emission threshold may be applied to the element row that does not emit the electron beam. Further, the common wirings Dx2 to Dx9 between the element rows, for example, Dx2 and Dx3 may be the same wiring.

FIG. 14 is a view showing the structure of an image forming apparatus provided with a ladder-type electron source. Reference numeral 140 is a grid electrode, reference numeral 141 is a hole for passing electrons,
Reference numeral 142 is an outer container terminal made of Dox1, Dox2 ... Doxm, and reference numeral 143 is an outer container terminal made of G1, G2, ... Gn connected to the grid electrode 140,
Reference numeral 130 indicates the electron source substrate in which the common wiring between the element rows is the same wiring as described above. 14, the same reference numerals as those in FIGS. 10 and 13 denote the same members. The image forming apparatus having the above-mentioned simple matrix arrangement (see FIG.
The difference is that the grid electrode 140 is provided between the electron source substrate 130 and the face plate 106.

A grid electrode 140 is provided between the substrate 130 and the face plate 106. The grid electrode 140 is capable of modulating the electron beam emitted from the surface conduction electron-emitting device, and passes the electron beam through the stripe-shaped electrodes provided orthogonal to the ladder-shaped element rows. A circular hole 141 is provided one by one corresponding to each element. The shape and installation position of the grid are not necessarily as shown in FIG. 14, and a large number of passage openings may be provided in the form of a mesh as openings. For example, they may be provided around or near the surface conduction electron-emitting device. . The outer container terminal 142 and the grid outer container terminal 143 are electrically connected to a control circuit (not shown).

In this image forming apparatus, a modulation signal for one image line is simultaneously applied to the grid electrode column in synchronization with the sequential driving (scanning) of the element rows one column at a time.
The irradiation of each electron beam to the phosphor can be controlled to display an image line by line.

Further, according to the present invention, it is possible to provide an image forming apparatus suitable for not only a display device for television broadcasting but also a display device such as a video conference system and a computer.

Further, it can be used also as an image forming apparatus as an optical printer composed of a photosensitive drum or the like.

Further, not only surface conduction electron-emitting devices but also cold cathode electron sources such as MIM electron-emitting devices and field emission electron-emitting devices can be used as the electron-emitting devices.
Further, it can be applied to an image forming apparatus using a thermoelectron source.

[0144]

As described above, according to the present invention, when the conductive thin film having unevenness is processed into a predetermined pattern shape by the laser light, the unevenness information of the conductive thin film is previously used by using the second laser light. It is possible to adjust the focus of the laser beam on the surface of the conductive thin film based on the unevenness information, so that there is no defocus due to the unevenness of the conductive thin film and the processed groove width becomes constant. In addition, high-speed and accurate processing can be achieved, and as a result, the image quality is improved in the image forming apparatus using the surface conduction electron-emitting device.

Further, the laser beam is branched, and one of the branched laser beams is attenuated to such an extent that the conductive thin film is not processed to obtain the second laser beam, so that the miniaturization of the device is achieved. it can.

[Brief description of drawings]

FIG. 1 is a view best showing a first embodiment of a manufacturing apparatus for suitably carrying out the method of manufacturing a surface conduction electron-emitting device according to the present invention.

FIG. 2 is an enlarged view of a processed surface.

FIG. 3 is a view best representing a second embodiment of a manufacturing apparatus for suitably carrying out the method of manufacturing a surface conduction electron-emitting device according to the present invention.

4A and 4B show a configuration of a planar surface conduction electron-emitting device, FIG. 4A is a schematic plan view, and FIG. 4B is a sectional view.

5A to 5C are process diagrams showing an example of a method of manufacturing the surface conduction electron-emitting device shown in FIG.

FIG. 6 is a schematic diagram showing the configuration of a basic vertical surface conduction electron-emitting device.

FIG. 7 is a diagram showing an example of a voltage waveform of energization forming.

FIG. 8 is a schematic configuration diagram of a measurement / evaluation apparatus for measuring electron emission characteristics.

FIG. 9 is a schematic configuration diagram of an electron source having a simple matrix arrangement.

FIG. 10 is a schematic configuration diagram of an image forming apparatus including an electron source having a simple matrix arrangement.

FIG. 11 is a diagram showing a fluorescent film.

FIG. 12 is a block diagram of an image forming apparatus including a drive circuit for performing display according to an NTSC television signal.

FIG. 13 is a schematic configuration diagram of a ladder-type electron source.

FIG. 14 is a schematic configuration diagram of an image forming apparatus including a ladder-type electron source.

FIG. 15 is a schematic plan view of a conventional surface conduction electron-emitting device.

[Explanation of symbols]

1 Laser Oscillator 1a Height Measurement Laser Light 1b Processing Laser Light 1aa X Direction Height Measurement Laser Light 1ab Y Direction Height Measurement Laser Light 2 Partial Reflection Mirror 3 Total Reflection Mirror 4 Slit 5 Objective Lens 6 Attenuator 7 Split mirror 7a Swing mechanism 8a, 8b Optical sensor 9 Position control mechanism 10 Lifting mechanism 11 XY direction scanning mechanism 12 Sample 13 Control computer 21 Wiring 22 Insulating layer 23 Conductive thin film 41 Substrate 42, 43 Element electrode 44 Conductive thin film 45 Electron emission Part 46 step forming part 80 ammeter for measuring the device current flowing through the conductive thin film between the device electrodes 81 power supply for applying the device voltage to the electron emitting device 82 measuring the emission current emitted from the electron emitting part For ammeter 83 High voltage power supply for applying voltage to anode electrode 84 Electron Anode electrode 85 for capturing the emission current emitted from the emission portion 85 Vacuum device 86 Exhaust pump 91 Electron source substrate 92 X-direction wiring 93 Y-direction wiring 94 Surface conduction electron-emitting device 95 Connection 101 Rear plate 102 Support frame 103 Glass Substrate 104 Phosphor film 105 Metal back 106 Face plate 107 High voltage terminal (Hv) 108 Envelope 111 Black conductive material 112 Phosphor 121 Display panel 122 Scanning circuit 123 Control circuit 124 Shift register 125 Line memory 126 Synchronous signal separation circuit 127 Modulation signal Generator 130 Electron source substrate 131 Electron emission element 132 Common wiring 140 Grid electrode 141 Holes for passing electrons 142, 143 Outside container terminals

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification code Internal reference number FI Technical indication location H01J 31/12 H01J 31/12 B H04N 5/68 H04N 5/68 B

Claims (10)

[Claims] 1. A conductive thin film is formed on a substrate, and after the conductive thin film is processed into a predetermined pattern shape with a laser beam being focused on the surface of the conductive thin film, electrons are emitted. In the method of manufacturing a surface conduction electron-emitting device using laser light for forming an electron emitting portion, the unevenness information of the surface of the conductive thin film is detected by using a second laser light, and the unevenness information is obtained. A method of manufacturing a surface conduction electron-emitting device using laser light, which comprises processing the conductive thin film while adjusting the focus of the laser light on the surface of the conductive thin film. 2. The second laser light which is irradiated onto the surface of the conductive thin film in the traveling direction of the processing point by the laser light by the split mirror and reflected by the surface of the conductive thin film. The method for manufacturing a surface-conduction electron-emitting device using laser light according to claim 1, wherein unevenness information on the surface of the conductive thin film is detected by making the light incident on a photosensor. 3. A second laser light which is applied to the surface of the conductive thin film in the traveling direction of the processing point by the laser light by a swing mechanism and is reflected by the surface of the conductive thin film. The method for manufacturing a surface-conduction type electron-emitting device using laser light according to claim 1, wherein the unevenness information on the surface of the conductive thin film is detected by making the light incident on an optical sensor. 4. The second laser beam is obtained by branching the laser beam and attenuating one of the branched laser beams to such an extent that the conductive thin film is not processed. 4. A method for manufacturing a surface conduction electron-emitting device using the laser beam according to any one of 3 above. 5. A scanning means for holding a substrate on which a conductive thin film to be a surface conduction electron-emitting device is formed and scanning the substrate in an arbitrary direction in the same plane as the substrate, and a laser beam having a desired output. A laser oscillating means for oscillating; a branching means for branching the laser light into a first laser light used for processing and a second laser light used for measurement; and a conductive thin film for the first laser light. An optical system for condensing on the surface of the second laser, an attenuator for attenuating the output of the second laser light to such an extent that the conductive thin film is not processed, and a second laser light whose output is attenuated by the attenuator. A detecting means for detecting unevenness information on the surface of the conductive thin film in the traveling direction of the processing point by the first laser light; and a focus of the first laser light by the optical system based on the unevenness information from the detecting means. An apparatus for manufacturing a surface conduction electron-emitting device using laser light, comprising: an elevating means for elevating and lowering the optical system so as to align a point with the surface of the conductive thin film. 6. The second detecting means, wherein the output is attenuated by the attenuator on the surface of the conductive thin film in the traveling direction of the processing point by the first laser light.
Irradiating means for irradiating the laser beam, and the second laser beam reflected by the surface of the conductive thin film is received, and the unevenness of the surface of the conductive thin film in the traveling direction of the processing point by the first laser beam is received. An optical sensor to get information,
The apparatus for manufacturing a surface-conduction type electron-emitting device using a laser beam according to claim 5, comprising: 7. The apparatus for manufacturing a surface conduction electron-emitting device using laser light according to claim 6, wherein the irradiation means is a split mirror. 8. The irradiating means is a swing mechanism that changes the irradiating direction of the second laser light whose output is attenuated by the attenuator according to the traveling direction of the processing point by the first laser light. The apparatus for manufacturing a surface conduction electron-emitting device using the laser beam according to claim 6. 9. The apparatus for manufacturing a surface conduction electron-emitting device using laser light according to claim 5, wherein the elevating means uses a linear motor. 10. The apparatus for manufacturing a surface conduction electron-emitting device using laser light according to claim 5, wherein the elevating means uses a piezoelectric element.