JPH08124484A - Manufacture of image forming device - Google Patents

Abstract

PURPOSE: To enhance the mounted strength of an exhaust pipe mounted on an envelope by mounting a molding die around the exhaust-pipe through hole of the envelope comprising an electron-source base, a faceplate and a support frame, then packing frit in from a frit injection opening, and baking the frit. CONSTITUTION: An electron-source base 1, a faceplate 2, a support frame 3 and sealing frit 4 are positioned and fixed to meet a predetermined relationship to one another (via a fixing jig) and are baked and soldered together to form an envelope 9. Further, an exhaust pipe 5 is combined with a molding die 7 put on an exhaust-pipe through hole 5a and is installed almost perpendicular to the faceplate. Next, a paste of exhaust-pipe-fixing frit 6 is sealed in from a frit injection opening 8 and sealing is performed by baking. After sealing, the molding die 7 is divided along a dividing line 10 while being peeled from the frit 6 so as to be removed from the exhaust pipe 5 and the envelope 9.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron-emitting device, and more particularly to a method of manufacturing an image forming apparatus using a surface conduction electron-emitting device.

[0002]

2. Description of the Related Art Conventionally, two types of electron emitters, a thermoelectron source and a cold cathode electron source, are known. The cold cathode electron source includes a field emission type (hereinafter abbreviated as FE type), a metal / insulating layer / metal type (hereinafter abbreviated as MIM type), and a surface conduction type electron emission element. As an example of the FE type, W. P. Dyke &
W. W. Dolan, "Field Emissio"
n ", Advance in Electron Ph
ysics, 8 89 (1956) or C.I. A. S
pindt, "Physical Property"
s of thin-film field emis
sion cathodes with mollybd
enium ", J. Appl. Phys., 47 52.
48 (1976) and the like are known.

An example of the MIM type is C.I. A. Mea
d, "The tunnel-emission am
plier ", J. Appl. Phys., 32.
646 (1961) and the like are known.

As an example of the surface conduction electron-emitting device type,
M. I. Elinson, Radio Eng. El
electron Phys. 10 (1965) and so on. The surface conduction electron-emitting device utilizes a phenomenon in which electron emission occurs when a current is applied to a thin film having a small area formed on a substrate in parallel with the film surface. As the surface conduction electron-emitting device, the S by Erinson et al.
nO ₂ thin film, Au thin film [G. D
ittmer: "Thin Solid Film
s ", 9 317 (1972)], In ₂ O ₃ / SnO
₂ Thin film [M. Hartwell and
C. G. Fonstad: "IEEE Trans.
ED Conf. , 519 (1975)], by carbon thin film [Hiraki Araki et al .: Vacuum, Vol. 26, No. 1
No., p. 22 (1983)] and the like.

As a typical element structure of these surface conduction electron-emitting devices, the above-mentioned M. The Hartwell device configuration is shown in FIG. In the figure, 201 is a substrate. Two
Reference numeral 04 denotes a conductive thin film, which is composed of a metal oxide thin film or the like formed by sputtering on an H-shaped pattern, and is subjected to an energization process called energization forming which will be described later.
Is formed. The element electrode spacing L in the figure is 0.5 to
1 mm and W'are set to 0.1 mm. Since the position and shape of the electron emitting portion 205 are unknown, they are shown as a schematic diagram.

Conventionally, in these surface conduction electron-emitting devices, it is general that the electron-emitting portion 205 is formed in advance by conducting a current called a conductive forming process on the conductive thin film 204 before the electron emission. That is, the energization forming means a DC voltage across the conductive thin film 204 or a very slow rising voltage, for example, 1V.
This is to form an electron-emitting portion 205 in an electrically high resistance state by locally applying a current of about 1 / minute to locally destroy, deform or alter the conductive thin film. In the electron emitting portion 205, a crack is generated in a part of the conductive thin film 204, and electrons are emitted from the vicinity of the crack.

In the surface conduction electron-emitting device that has been subjected to the energization forming process, a voltage is applied to the conductive thin film 204 and a current is caused to flow through the device, so that the electron-emitting portion 205 is formed.
It allows more electrons to be emitted.

Since the above-mentioned surface conduction electron-emitting device has a simple structure and is easy to manufacture, it has an advantage that many devices can be arrayed and formed over a large area. Therefore, various applications that can make full use of this feature are being researched. For example, a display device such as a charged beam source or an image forming apparatus can be used.

25 and 26 are shown in Japanese Examined Patent Publication No. 63-617.
FIG. 11 is a diagram showing a step of attaching an exhaust pipe to a substrate in the conventional method for manufacturing an image forming apparatus disclosed in Japanese Patent Publication No. 41-41.

FIG. 25 is a diagram showing a structure of a conventional image forming apparatus (fluorescent display tube). In the figure, 101 is a substrate provided with an exhaust pipe through hole 101a, 102 is a cover glass, and 103 is a cover glass 102. FIG. 26 shows the details of the sealing frit for sealing the substrate 101 to the substrate 101, the exhaust pipe 104 vertically attached to the substrate 101, and the press-molded frit glass tablet 105. The material of the tablet 105 is the same frit as the sealing frit 103 or has the same softening point, the outer diameter is d ₁ and the height is h ₁ .

Next, a method of manufacturing the fluorescent display tube having the above structure will be described.

The cover glass 102 is fixed to the substrate 101 by a sealing clip jig (not shown), the tablet 105 is placed on the substrate 101, and the exhaust pipe 104 is fixed by an exhaust pipe holding jig (not shown). It is fixed vertically to the substrate 101. Then, the substrate 101 and the cover glass 10
In the sealing step of heating and sealing 2 and 2, the exhaust pipe 10
The substrate 101 of No. 4 is heated at the same time and fixed by firing. The conventional image forming apparatus before exhaust gas sealing shown in FIG. 25 is manufactured by the manufacturing method described above.

However, the flowability of the frit glass,
If wettability is poor, frit glass tablets after firing
The shape of 105 is as shown in FIG.
The contact angle θ changes from 45 degrees to 60 degrees. And the table
The shape of the grate 105 after firing is determined only by its own weight.
Therefore, the diameter d₁ ≒ d₂ Next, height h₂ Is the height h ₁ 
Slightly smaller. Where d₂ Is the table after firing
The average diameter of the

The smaller the contact angle θ between the substrate and the tablet, the weaker the fixing strength of the tablet 105 to the substrate,
The contact area with the substrate surface is also small. Further, also at the bonded portion between the tablet 105 and the exhaust pipe 104, the angle formed by the exhaust pipe and the frit glass surface is close to a right angle, and stress is likely to concentrate. Therefore, when connecting the vacuum exhaust system device and the exhaust pipe in an unreasonable manner, or,
When the relative positions of the vacuum exhaust system device and the image forming apparatus are displaced in the connected state, a large force is applied to the connecting portion between the exhaust pipe and the image forming apparatus, and the exhaust pipe is easily broken.

Further, there is a drawback that the leak path for vacuum is short and the reliability of the vacuum seal is poor.

[0016]

SUMMARY OF THE INVENTION It is an object of the present invention to improve the mechanical strength of an exhaust pipe connecting portion in an image forming apparatus using an electron-emitting device, particularly in an image forming apparatus using a surface conduction electron-emitting device. Improvement, and moreover, to obtain a highly reliable vacuum seal.

[0017]

SUMMARY OF THE INVENTION The present invention, which has been made to achieve the above object, provides an electron source substrate including a plurality of electron-emitting devices and device electrodes, and an electron-emitting device which is arranged so as to face the electron-source substrate. The inside and outside of the envelope are communicated with an envelope constituted by a face plate on which a member to be irradiated for receiving electrons is mounted, and a support frame arranged between the electron source substrate and the face plate. A method of manufacturing an image forming apparatus for fixing an exhaust pipe, comprising the step of controlling the shape of an exhaust pipe fixing frit for fixing the exhaust pipe to the envelope after firing. The shape control step comprises firing and fixing the exhaust pipe fixing frit while covering the exhaust pipe fixing frit with a molding die, wherein the molding die has a frit injection port, and fixing the exhaust pipe and the envelope. Part of the above After covering with a mold, then pouring the exhaust pipe fixing frit through the frit injection port of the molding die, followed by firing and fixing, and after applying the exhaust pipe fixing frit to the connecting portion between the exhaust pipe and the envelope. Covering the exhaust pipe fixing frit with the molding die and firing and fixing, and arranging the frit glass tablet and the exhaust pipe pre-fired or press-formed at the connecting portion between the envelope and the exhaust pipe. Further, the tablet is covered with the molding die and baked and fixed, and the cross-sectional shape of the surface of the molding die which is in contact with the exhaust pipe fixing frit along the axial direction is a part of an arc. The cross-sectional shape of the surface in contact with the exhaust pipe fixing frit along the axial direction is a smooth curve formed by a plurality of straight lines or a part of a circular arc and a plurality of straight lines; The surface in contact with the trachea fixing frit and the exhaust pipe form a gradual proximity line, the connecting portion between the exhaust pipe and the envelope is the face plate, and the exhaust pipe and the envelope The connection part is the electron source substrate, the connection part between the exhaust pipe and the envelope is the support frame, and the electron-emitting device is a surface conduction electron-emitting device.

According to the present invention, in the image forming apparatus using the electron-emitting device, it is possible to improve the mechanical strength of the exhaust pipe connecting portion and to obtain a highly reliable vacuum seal. .

The present invention will be described in detail below. (Embodiment) FIG. 1 is a diagram illustrating an embodiment of the present invention, and is a schematic cross-sectional view illustrating an exhaust pipe connecting portion in an image forming apparatus.

In FIG. 1, 1 is an electron source substrate on which device electrodes, electron-emitting devices and the like (not shown) are mounted, 2 is a face plate on which phosphors and the like (not shown) are mounted, 3 is a support frame, 4 Is a frit for sealing, 5 is an exhaust pipe, 5a is an exhaust through hole which is provided on the face plate and communicates with the exhaust pipe 5, 6 is an exhaust pipe fixing frit, 7 is a molding die, and 8 is a molding die 7. The frit injection port, 9 is an envelope.

The molding die 7 has a substantially circular truncated cone shape whose diameter gradually increases as it goes downward, and an upper port 7a having a small diameter is formed on the upper surface and a lower port 7b having a large diameter is formed on the lower surface. There is.

The upper port 7a and the lower port 7b are communicated with each other by an internal hole 7c having a larger diameter toward the lower side. Therefore, the molding die 7 as a whole is substantially funnel-shaped.

Next, a method of manufacturing the image forming apparatus will be described.
The electron source substrate 1, the support frame 3, the face plate 2, and the sealing frit 4 are fixed (fixing jig is not shown) and baked to form the envelope 9. Next, the exhaust pipe 5 is connected to the exhaust pipe through hole 5
On the periphery of a, in combination with the molding die 7, it is installed almost vertically to the face plate. Thereafter, a paste-like exhaust pipe sealing frit is injected from the frit injection port 8 and fired for sealing.

After firing, the mold 7 is removed.

As a result, the image forming apparatus as shown in FIG. 2 can be manufactured. FIG. 2 is an enlarged cross-sectional view of the exhaust pipe connecting portion of the image forming apparatus. Since the frit surface is connected to the face surface and the surface of the exhaust pipe in a gradual proximity line, the face plate and the exhaust pipe are connected smoothly as a whole, which improves mechanical strength and has a long vacuum leak path. An image forming apparatus can be manufactured.

The cold cathode electron source used in the present invention is preferably a surface conduction electron-emitting device which has a simple structure and is easy to manufacture.

There are basically two types of surface conduction electron-emitting devices that can be used in the present invention: a planar surface conduction electron-emitting device and a vertical surface conduction electron-emitting device.

FIG. 13 is a schematic plan view (a) and a sectional view (b) showing the structure of a basic surface conduction electron-emitting device.

In FIG. 13, 201 is a substrate, 202,
Reference numeral 203 is a device electrode, 204 is a conductive thin film, and 205 is an electron emitting portion.

As the substrate 201, quartz glass, glass containing a small amount of impurities such as Na, soda lime glass, SiO ₂
A glass substrate having a surface on which is formed and a ceramic substrate such as alumina are used.

As the material of the device electrodes 202 and 203, a general conductor is used, for example, Ni, Cr, Au, M.
a printed conductor composed of a metal or alloy such as o, W, Pt, Ti, Al, Cu, Pd and a metal or metal oxide such as Pd, Ag, Au, RuO ₂ , Pd-Ag, and glass;
It is appropriately selected from a transparent conductor such as In ₂ O ₃ —SnO ₂ and a semiconductor material such as polysilicon.

The device electrode distance L is preferably several hundreds of angstroms to several hundreds of micrometers. In addition, it is desirable that the voltage applied between the device electrodes is low, and it is required to produce it with good reproducibility. Therefore, the particularly preferred device electrode interval is several micrometers to several tens of micrometers.

The device electrode length W is preferably several micrometers to several hundreds of micrometers in view of the resistance value of the electrodes and electron emission characteristics, and the film thickness of the device electrodes 202 and 203 is preferably several micrometers to several micrometers.

In addition to the structure shown in FIG.
The conductive thin film 204 and the electrodes of the device electrodes 202 and 203 may be formed in this order on the structure.

The conductive thin film 204 is particularly preferably a fine particle film composed of fine particles in order to obtain good electron emission characteristics. The thickness of the conductive thin film 204 is the step coverage to the device electrodes 202 and 203 and the resistance between the device electrodes 202 and 203. The value is appropriately set depending on the value and energization forming conditions described later, but is preferably several angstroms to several thousand angstroms, particularly preferably 10 angstroms to 5 angstroms.
It is 00 angstrom. The sheet resistance is 10
3 to 10 7 ohms / square.

The material forming the conductive thin film 204 is
Pd, Pt, Ru, Ag, Au, Ti, In, Cu, C
Metals such as r, Fe, Zn, Sn, Ta, W and Pb, Pd
O, SnO ₂ , In ₂ O ₃ , oxides such as PbO and Sb ₂ O ₃ , HfB ₂ , ZrB ₂ , LaB ₆ , CeB ₆ , YB
₄ , boride such as GdB ₄ , TiC, ZrC, HfC, T
Carbides such as ac, SiC, WC, TiN, ZrN, Hf
Examples thereof include nitrides such as N, semiconductors such as Si and Ge, and carbon.

The fine particle film described here is a film in which a plurality of fine particles are aggregated, and its fine structure is not only in a state in which fine particles are dispersed and arranged but also in a state in which fine particles are adjacent to each other or overlap each other (island). The particle size of the fine particles is from several angstroms to several thousand angstroms, preferably from 10 angstroms to 200 angstroms.

The electron emitting portion 205 is a high resistance crack formed in a part of the conductive thin film 204 and is formed by energization forming or the like. Further, the cracks may have conductive fine particles having a particle diameter of several angstroms to several hundred angstroms. The conductive fine particles are the conductive thin film 204.
It contains at least a part of the elements constituting the.
In addition, the electron emitting portion 205 and the conductive thin film 204 in the vicinity thereof
May have carbon and carbon compounds.

FIG. 14 is a schematic view showing the structure of a basic vertical surface conduction electron-emitting device.

In FIG. 14, the same components as those in FIG. 13 are designated by the same reference numerals. 221 is a step forming portion.

The substrate 201, the device electrodes 202 and 203, the conductive thin film 204, and the electron-emitting portion 205 can be made of the same material as that of the above-mentioned plane type surface conduction electron-emitting device, and the step forming portion 221 is made of an insulating material. The film thickness of the step forming portion 221 made of a material corresponds to the device electrode distance L of the flat surface conduction electron-emitting device described above. The spacing is tens of micrometers rather than hundreds of angstroms. The distance can be controlled by the manufacturing method of the step forming portion and the voltage applied between the device electrodes, but it is preferably several hundred angstroms to several micrometers.

The conductive thin film 204 is a device electrode 202, 20.
3 and the step forming portion 221 are formed after they are formed, so that they are laminated on the device electrodes 202 and 203. In FIG. 14, the electron emitting portion 205 is shown to be linearly formed on the step forming portion 221, but the shape and position are not limited to this, depending on the preparation conditions, energization forming conditions, and the like. Absent.

There are various methods for manufacturing the above-mentioned surface conduction electron-emitting device, one example of which is shown in FIG.

Hereinafter, a method of manufacturing the electron source substrate will be described with reference to FIGS. The same components as those in FIG. 13 are designated by the same reference numerals.

1) After thoroughly cleaning the substrate 201 with a detergent, pure water and an organic solvent, a device electrode material is deposited by a vacuum deposition method, a sputtering method or the like. Then, the device electrodes 202 and 203 are formed on the substrate by the photolithography technique (FIG. 15A).

2) An organic metal thin film is formed by applying an organic metal solution on the substrate 201 having the device electrodes 202 and 203 and leaving it to stand. The organometallic solution referred to here is a solution of an organometallic compound containing a metal forming the conductive thin film 204 as a main element. After that, the organic metal thin film is heated and baked, and is patterned by lift-off, etching or the like to form the conductive thin film 204 (FIG. 15).
(B)). Although the formation of the organometallic thin film has been described here by the coating method, it is not limited to this, and it may be formed by a vacuum vapor deposition method, a sputtering method, a chemical vapor deposition method, a dispersion coating method, a dipping method, a spinner method, or the like. There are also cases.

3) Subsequently, energization processing called energization forming is performed. The energization forming is performed by the device electrodes 202, 2
A power source (not shown) is applied between the electrodes 03 to locally break, deform or alter the conductive thin film 204 to form a portion having a changed structure. The part where the structure is locally changed is called an electron emission part 205 (see FIG. 1).
5 (c)). FIG. 16 shows an example of the voltage waveform of energization forming.
Shown in

A pulse waveform is particularly preferable as the voltage waveform, and a voltage pulse having a constant pulse peak value is continuously applied (FIG. 16A) and a voltage pulse is applied while increasing the pulse peak value ( 16 (b)). First, when the pulse peak value is a constant voltage (Fig. 16 (a))
Will be described.

In FIG. 16A, T1 and T2 are the pulse width and pulse interval of the voltage waveform. T1 is 1 microsecond to 10 milliseconds, T2 is 10 microseconds to 100 milliseconds, and the peak value of the triangular wave ( The peak voltage during energization forming) is appropriately selected according to the form of the surface conduction electron-emitting device, and is applied for several seconds to several tens of minutes under a vacuum atmosphere having an appropriate degree of vacuum, for example, about 10 −5 torr. To do. The waveform applied between the electrodes of the element is not limited to the triangular wave, and a desired waveform such as a rectangular wave may be used.

T1 and T2 in FIG. 16 (b) are the same as those in FIG. 16 (a), and the crest value of the triangular wave (peak voltage during energization forming) is increased by, for example, about 0.1 V step, and is made appropriate. Apply in a vacuum atmosphere.

In the energization forming process in this case, the conductive thin film 204 is locally destroyed during the pulse interval T2.
With a voltage that does not deform, for example, a voltage of about 0.1 V,
The device current is measured and the resistance value is obtained. For example, the energization forming is completed when the resistance is 1 M ohm or more.

4) Next, it is desirable to perform a process called an activation process on the element which has completed the energization forming.

The activation step is, for example, 10 −4 to
Similar to the energization forming, this is a process of repeatedly applying a voltage pulse having a constant pulse peak value at a vacuum degree of about 10 −5 torr, which conducts carbon and carbon compounds originating from an organic substance existing in a vacuum. It is a process of depositing it on the thin film and changing the device current If and emission current Ie remarkably. The activation process is completed, for example, when the emission current Ie is saturated while measuring the device current If and the emission current Ie. Further, it is preferable that the applied voltage pulse is an operation drive voltage.

Here, carbon and carbon compounds are graphite (single and polycrystalline) and amorphous carbon (mixture of amorphous carbon and polycrystalline graphite), and their thickness is It is preferably 500 angstroms or less, more preferably 300 angstroms or less.

5) It is preferable to place the electron-emitting device thus prepared in an energizing forming process and an activating process under an atmosphere having a higher degree of vacuum than that in the energizing forming process and drive it.
In addition, it is desirable to operate and drive after heating to 80 ° C. to 150 ° C. in an atmosphere of a higher degree of vacuum.

The degree of vacuum higher than the degree of vacuum in the energization forming step and activation step is, for example, about −10.
The degree of vacuum is a sixth power or more, more preferably an ultrahigh vacuum system, and a degree of vacuum in which carbon and carbon compounds are hardly newly deposited on the conductive thin film. By doing so, the device current If and the emission current Ie can be stabilized.

FIG. 17 is a schematic configuration diagram of a measurement / evaluation apparatus for measuring the electron emission characteristics of the element having the configuration shown in FIG. 17, the same reference numerals as those in FIG. 13 indicate the same components. In FIG. 17, reference numeral 251 denotes a power source for applying a device voltage Vf to the electron-emitting device, and 250.
Is an ammeter for measuring the device current If flowing through the conductive thin film 204 between the device electrodes 202 and 203, 254 is an anode electrode for capturing the emission current Ie emitted from the electron emission portion of the device, and 253 is A high-voltage power supply for applying a voltage to the anode electrode 254, an ammeter 252 for measuring an emission current Ie emitted from the electron emission portion 205 of the device, a vacuum device 255, and an exhaust pump 256.

Next, the image forming apparatus of the present invention will be described. The electron source substrate used in the image forming apparatus is formed by arranging a plurality of surface conduction electron-emitting devices on the substrate.

In the arrangement method of the surface conduction electron-emitting devices, the surface conduction electron-emitting devices are arranged in parallel, and both ends of each device are connected by a ladder arrangement (hereinafter referred to as a ladder arrangement electron source substrate). ) Or a simple matrix arrangement (hereinafter referred to as a matrix-type arrangement electron source substrate) in which a pair of element electrodes of the surface conduction electron-emitting device are respectively connected with X-direction wiring and Y-direction wiring. An image forming apparatus having a ladder type electron source substrate requires a control electrode (grid electrode) which is an electrode for controlling the flight of electrons from the electron-emitting device.

The configuration of the electron source constructed based on this principle will be described below with reference to FIG. 271 is an electron source substrate, 272 is an X-direction wiring, 273 is a Y-direction wiring, 2
74 is a surface conduction electron-emitting device, and 275 is a connection.
The surface conduction electron-emitting device 274 may be either the above-mentioned plane type or vertical type.

In the figure, the substrate used as the electron source substrate 271 is the above-mentioned glass substrate or the like, and the shape is appropriately set according to the application.

The m X-direction wirings 272 are Dx1 and Dx.
2, ... Dxm, and the Y-direction wiring 273 is Dy
It consists of n wirings of 1, Dy2, ..., Dyn.

The material, film thickness, and wiring width are appropriately set so that a substantially uniform voltage is supplied to many surface conduction elements. The m X-direction wirings 272 and the n Y-direction wirings 273 are electrically separated by an interlayer insulating layer (not shown) to form a matrix wiring. (Both m and n are positive integers) The interlayer insulating layer (not shown) is formed on the entire surface of the substrate 271 on which the X-direction wiring 272 is formed or a desired portion thereof. The X-direction wiring 272 and the Y-direction wiring 273 are drawn out via external terminals.

Further, the device electrodes (not shown) of the surface conduction electron-emitting device 274 are electrically connected to the m X-direction wirings 272 and the n Y-direction wirings 273 by connection lines 275. The surface conduction electron-emitting device may be formed either on the substrate or on an interlayer insulating layer (not shown).

The X-direction wiring 2 will be described in detail later.
72 is electrically connected to a scan signal generating means (not shown) for applying a scan signal for scanning a row of surface conduction electron-emitting devices 274 arranged in the X direction according to an input signal.

On the other hand, a modulation signal (not shown) for applying a modulation signal for modulating each row of the surface conduction electron-emitting devices 274 arranged in the Y direction according to an input signal to the Y-direction wiring 273. It is electrically connected to the generating means.

Further, the drive voltage applied to each element of the surface conduction electron-emitting device is supplied as a difference voltage between the scanning signal applied to the element and the modulation signal.

In the above structure, individual elements can be selected and driven independently by using only simple matrix wiring.

Next, an image forming apparatus using the matrix type arrangement electron source substrate produced as described above will be described with reference to FIGS. 19, 20 and 21. 19 is a basic configuration diagram of the image forming apparatus, FIG. 20 is a fluorescent film, and FIG.
Reference numeral 1 shows a block diagram of a drive circuit for displaying in accordance with an NTSC television signal, and represents an image forming apparatus including the drive circuit.

In FIG. 19, reference numeral 271 denotes an electron source substrate on which an electron-emitting device is formed, and 281 denotes an electron source substrate 271.
Is a face plate having a fluorescent film 284, a metal back 285 and the like formed on the inner surface of a glass substrate 283, 282 is a support frame, and an envelope 288 is constituted by these members.

In FIG. 19, reference numeral 274 denotes an electron emitting portion, which corresponds to the electron emitting portion 205 in FIG. 272, 2
Reference numeral 73 is an X-direction wiring and a Y-direction wiring connected to a pair of device electrodes of the surface conduction electron-emitting device.

The envelope 288 comprises the face plate 286, the support frame 282, and the rear plate 281 as described above, but the rear plate 281 is mainly for the purpose of reinforcing the strength of the electron source substrate 271. Because it is provided,
If the electron source substrate 271 itself has sufficient strength, the separate rear plate 281 is not necessary, and the support frame 282 is directly provided on the electron source substrate 271, and the face plate 286, the support frame 282, and the electron source substrate 271 are used. The envelope 288 may be configured.

FIG. 20 shows the structure of the phosphor film of the face plate, and 292 is the phosphor. In the case of monochrome, the phosphor 292 is composed of only the phosphor, but in the case of a color phosphor film, it is composed of a black conductive material 291 called a black stripe or a black matrix depending on the arrangement of the phosphor and a phosphor 292. In the case of color display, the purpose of providing the black stripes and the black matrix is to make the color-separated portion between the respective phosphors 292 of the three primary color phosphors black so as to make the color mixture inconspicuous and the phosphor film shown in FIG. This is to suppress a decrease in contrast due to external light reflection at 284. The material of the black stripe is not limited to the commonly used material containing graphite as a main component, as long as it is conductive and has little light transmission and reflection.

The phosphor 292 and the black conductive material 291 are formed on the glass substrate 283 (FIG. 19).

As a method for applying the phosphor to the glass substrate 283, a precipitation method or a printing method is used regardless of monochrome or color.

A metal back 285 (FIG. 19) is usually provided on the inner surface side of the fluorescent film 284 (FIG. 19). The purpose of the metal back is to improve the brightness by specularly reflecting the light to the inner surface side of the light emission of the phosphor to the face plate 286 side, to act as an electrode for applying an electron beam acceleration voltage, This is to protect the phosphor from damage due to the collision of negative ions generated inside the container. For metal back, after the fluorescent film is made, the inner surface of the fluorescent film is smoothed (usually called filming),
After that, Al (aluminum) is deposited by vacuum vapor deposition or the like to be manufactured.

The face plate 286 may be provided with a transparent electrode (not shown) on the outer surface side of the fluorescent film 284 in order to further enhance the conductivity of the fluorescent film 284.

The envelope 288 is provided with an exhaust pipe (not shown)
The degree of vacuum is set to about 0 ^-7 torr, and sealing is performed in this state. Further, a getter process may be performed in order to maintain the degree of vacuum after the envelope 288 is sealed. This is done by heating a getter placed at a predetermined position (not shown) in the envelope 288 by a heating method such as resistance heating or high frequency heating immediately before or after the envelope 288 is sealed,
This is a process of forming a vapor deposition film. The getter usually has Ba or the like as a main component, and is, for example, 1 × due to the adsorption action of the deposited film.
The degree of vacuum is maintained at 10 ⁻⁵ torr or 1 × 10 ⁻⁷ torr.

The steps after forming the surface conduction electron-emitting device are appropriately set.

Next, referring to the block diagram of FIG. 21, a schematic structure of a drive circuit for displaying a television on the basis of an NTSC television signal in an image forming apparatus constructed by using a matrix type electron source substrate will be described. explain. 301 is an image forming apparatus of the present invention, and 302 is a scanning circuit, 3
Reference numeral 03 is a control circuit, 304 is a shift register, 305 is a line memory, 306 is a synchronizing signal separation circuit, 307 is a modulation signal generator, and Vx and Va are DC voltage sources.

The functions of the respective parts will be described below. First, the image forming apparatus 301 is connected to an external electric circuit via the terminals Dox1 to Doxm, the terminals Doy1 to Doyn and the high voltage terminal Hv. Among them, the terminals Dox1 to Doxm sequentially drive the electron sources provided in the image forming apparatus, that is, the surface conduction electron-emitting devices arranged in a matrix of M rows and N columns matrix by row (N elements). A scanning signal for application is applied.

On the other hand, a modulation signal for controlling the output electron beam of each element of the surface conduction electron-emitting devices of one row selected by the scanning signal is applied to the terminals Dy1 to Dyn. Further, from the DC voltage source Va to the high voltage terminal Hv,
For example, a direct current voltage of 10 [kV] is supplied, which is an accelerating voltage for giving enough energy to excite the phosphor to the electron beam output from the surface conduction electron-emitting device.

Next, the scanning circuit 302 will be described. The circuit is provided with M switching elements therein (schematically shown by S1 to Sm in the figure), and each switching element is an output voltage of the DC voltage source Vx or 0.
One of [V] (ground level) is selected and electrically connected to the terminals Dx1 to Dxm of the display panel 301. Each of the switching elements S1 to Sm operates based on the control signal Tscan output by the control circuit 303, but can be actually configured by combining switching elements such as FETs.

The DC voltage source Vx is such that the drive voltage applied to an unscanned element is equal to or lower than the electron emission threshold voltage based on the characteristics (electron emission threshold voltage) of the surface conduction electron-emitting element. It is set to output a constant voltage such that

Further, the control circuit 303 has a function of matching the operation of each part so that an appropriate display is performed based on an image signal input from the outside. The synchronization signal Tsyn sent from the synchronization signal separation circuit 306 described next
Based on c, Tscan, Tsft, and Tmry control signals are generated for each unit.

The sync signal separation circuit 306 is a circuit for separating the sync signal component and the luminance signal component from the NTSC system television signal input from the outside, and can be constructed by using a frequency separation (filter) circuit. The sync signal separated by the sync signal separation circuit 306 is composed of a vertical sync signal and a horizontal sync signal, as is well known, but is shown here as a Tsync signal for convenience of description. on the other hand,
The luminance signal component of the image separated from the television signal is referred to as a DATA signal for convenience, but the signal is the shift register 30.
4 is input.

The shift register 304 is for serially / parallel converting the DATA signal serially input in time series for each line of the image, and operates based on the control signal Tsft sent from the control circuit 303. . (That is, the control signal Tsft corresponds to the shift register 3
In other words, the shift clock may be 04. ) The data of one line of the serial / parallel-converted image (corresponding to drive data for N electron-emitting devices) is 1d.
It is output from the shift register 304 as N parallel signals of 1 to 1dn.

The line memory 305 is a storage device for storing data for one line of an image only for a required time,
The contents of Id1 to Idn are appropriately stored according to the control signal Tmry sent from the control circuit 303. The stored contents are output as Idl to Idn and input to the modulation signal generator 307.

The modulation signal generator 307 outputs the image data I
A signal source for appropriately driving and modulating each of the surface conduction electron-emitting devices according to each of d1 to Idn, and an output signal thereof is applied to the surface conduction electron-emitting devices in the display panel 301 through terminals Doy1 to Doyn. To be done.

The electron-emitting device according to the present invention has an emission current I.
It has the following basic characteristics for e. That is, the electron emission has a clear threshold voltage Vth, and the electron emission occurs only when a voltage equal to or higher than Vth is applied.

Further, for a voltage equal to or higher than the electron emission threshold value, the emission current also changes according to the change in the voltage applied to the element. The value of the electron emission threshold voltage Vth and the degree of change of the emission current with respect to the applied voltage may change by changing the material, configuration, and manufacturing method of the electron emitting element. I can say.

That is, when a pulsed voltage is applied to this element, for example, no electron emission occurs even if a voltage below the electron emission threshold is applied, but when a voltage above the electron emission threshold is applied, the electron beam is Is output. At that time, first, it is possible to control the intensity of the output electron beam by changing the peak value Vm of the pulse. Second, it is possible to control the total amount of charges of the electron beam output by changing the pulse width Pw.

Therefore, as a method of modulating the electron-emitting device according to the input signal, there are a voltage modulation method, a pulse width modulation method, and the like. To implement the voltage modulation method, the modulation signal generator 307 has a fixed value. A circuit of a voltage modulation system is used that generates a voltage pulse of a length but appropriately modulates the peak value of the pulse according to the input data.

In order to implement the pulse width modulation method, the modulation signal generator 307 generates a voltage pulse having a constant peak value, but a pulse for appropriately modulating the width of the voltage pulse according to the input data. A width modulation type circuit is used.

By the series of operations described above, the television can be displayed by using the image forming apparatus of the present invention.
Although not particularly described in the above description, the shift register 3
04 and the line memory 305 may be of a digital signal type or an analog signal type, and the point is that the serial / parallel conversion and storage of the image signal may be performed at a predetermined speed.

When the digital signal type is used, it is necessary to convert the output signal DATA of the sync signal separation circuit 306 into a digital signal, which can be achieved by providing an A / D converter at the output section of 306. Further, in connection with this, the circuit used in the modulation signal generator 307 is slightly different depending on whether the output signal of the line memory 305 is a digital signal or an analog signal.

First, the case of digital signals will be described.
In the voltage modulation method, for example, a well-known D / A conversion circuit may be used as the modulation signal generator 307, and an amplification circuit or the like may be added if necessary. In the case of the pulse width modulation method, the modulation signal generator 307 includes, for example, a high-speed oscillator, a counter that counts the number of waves output from the oscillator, and a comparator that compares the output value of the counter with the output value of the memory. It can be configured by using a circuit in which (comparators) are combined. If necessary, an amplifier for voltage-amplifying the pulse-width-modulated modulation signal output from the comparator up to the drive voltage of the surface conduction electron-emitting device may be added.

Next, the case of analog signals will be described.
In the voltage modulation method, for the modulation signal generator 307, for example, an amplifier circuit using a well-known operational amplifier may be used, and a level shift circuit or the like may be added if necessary. In the case of the pulse width modulation method, for example, a well-known voltage controlled oscillation circuit (VCO) may be used, and an amplifier for amplifying the voltage to the drive voltage of the surface conduction electron-emitting device may be added if necessary. May be.

In the image forming apparatus completed as described above, each of the electron-emitting devices has terminals outside the container Dox1 to Dx.
Electrons are emitted by applying a voltage through oxm, Doy1 to Doyn, and a high voltage is applied to the metal back 285 or the transparent electrode (not shown) through the high voltage terminal Hv to accelerate the electron beam and cause the fluorescent film 284 to reach the fluorescent film 284. An image can be displayed by colliding, exciting and emitting light.

The above-described structure is a schematic structure necessary for producing a suitable image forming apparatus used for display or the like, and the detailed parts such as the material of each member are not limited to those described above. , Is appropriately selected to suit the application of the image forming apparatus. Further, although the NTSC system is given as an example of the input signal, the input signal is not limited to this, and PAL, SECA
Various methods such as the M method may be used, or a TV signal (for example, a high-definition TV such as the MUSE method) including a number of scanning lines may be used.

Next, the ladder type electron source substrate and the image forming apparatus using the same will be described with reference to FIGS. 22 and 23.

In FIG. 22, 310 is an electron source substrate, 3
Reference numeral 11 denotes an electron emitting element, and Dx1 to Dx10 of 312 are common wirings connected to the electron emitting element. A plurality of electron-emitting devices 311 are arranged on the substrate 310 in parallel in the X direction. (This is called an element row). A plurality of this element row is arranged on the substrate to form a ladder type electron source substrate. By appropriately applying a drive voltage between the common wirings of each element row, each element row can be independently driven. That is, a voltage equal to or higher than the electron emission threshold may be applied to the element row that emits the electron beam, and a voltage equal to or lower than the electron emission threshold may be applied to the element row that does not emit the electron beam. Further, the common wirings Dx2 to Dx9 between the element rows, for example, Dx2 and Dx3 may be the same wiring.

FIG. 23 is a diagram showing the structure of an image forming apparatus provided with a ladder-type electron source. 320 is a grid electrode, 321 is a hole through which electrons pass, 322
Are external terminals of the container made of Dox1, Dox2 ... Doxm, 323 is G1 connected to the grid electrode 320,
An external terminal 310 made of G2, ... Gn is an electron source substrate in which the common wiring between the element rows is the same wiring as described above. The same reference numerals as those in FIGS. 19 and 21 denote the same members. The image forming apparatus having the above-mentioned simple matrix arrangement (see FIG.
The difference from 9) is that the grid electrode 320 is provided between the electron source substrate 310 and the face plate 286.

A grid electrode 320 is provided between the substrate 310 and the face plate 286. The grid electrode 320 is capable of modulating the electron beam emitted from the surface conduction electron-emitting device, and passes the electron beam through a striped electrode provided orthogonal to the ladder-shaped element rows, One circular hole 321 is provided corresponding to each element. The shape and installation position of the grid are not necessarily as shown in FIG. 23, and a large number of passage openings may be formed in a mesh shape as openings, and may be provided, for example, around or near the surface conduction electron-emitting device. . The external terminal 322 and the grid external terminal 323 are electrically connected to a control circuit (not shown).

In this image forming apparatus, the modulation signals for one image line are simultaneously applied to the grid electrode columns in synchronization with the sequential driving (scanning) of the element rows one column at a time.
The irradiation of each electron beam to the phosphor can be controlled to display an image line by line.

Further, according to the present invention, it is possible to provide an image forming apparatus suitable for not only a display device for television broadcasting but also a display device such as a video conference system and a computer. Further, it can be used as an image forming apparatus as an optical printer including a photosensitive drum or the like.

Further, not only surface conduction electron-emitting devices but also cold cathode electron sources such as MIM electron-emitting devices and field emission electron-emitting devices can be applied as electron-emitting devices.
Further, it can be applied to an image forming apparatus using a thermoelectron source.

[0108]

The present invention will be described in detail with reference to the following examples. (Embodiment 1) FIG. 1 is an enlarged sectional view of an image forming apparatus.

In FIG. 1, 1 is an electron source substrate on which a matrix type electron source having the surface conduction electron-emitting device obtained as described above is mounted, 2 is a face plate on which a fluorescent substance is mounted, and 3 is a face plate. A supporting frame, 4 is a frit for sealing, 5 is an exhaust pipe, 5a is an exhaust through hole communicating with the exhaust pipe 5 provided on a face plate, 6 is an exhaust pipe fixing frit, and 7 is an exhaust pipe fixing frit. Is a molding die for controlling the firing shape, 8 is a frit injection port provided in the molding die 7, and 9 is an envelope.

Next, the manufacturing method will be described. Electron source substrate 1, face plate 2, support frame 3, and sealing frit 4
Are fixed in a predetermined positional relationship (fixing jig is not shown), and baked and fixed to form the envelope 9. further,
The exhaust pipe 5 is installed on the exhaust pipe through hole 5a in combination with the molding die 7 almost vertically to the face plate (a fixing jig is not shown). Then, the paste-like exhaust pipe fixing frit 6 is injected from the frit inlet port 8,
Sealing is performed by firing.

FIG. 3 shows a perspective view of the molding die 7. Mold 7
A part of the arc was used as the curve of the inner surface in the cross section.
In FIG. 3, 10 is a dividing line of the molding die 7. The molding die 7 can be divided into two along the dividing line 10. Further, as the material of the molding die 7, aluminum which is easily peeled from the frit glass after firing was used, and it was manufactured by press working. In addition, the cutting die 7
Similar results were obtained even when the above was manufactured.

After sealing, the molding die 7 is peeled off from the exhaust pipe fixing frit 6, divided along the dividing line 10, and removed from the exhaust pipe 5 and the envelope 9.

FIG. 2 shows an enlarged cross-sectional view of the image forming apparatus (display panel) manufactured as a result of the above. In the connection between the envelope 9 and the exhaust pipe 5, the shape of the frit after firing is controlled, and an image forming apparatus (display panel) having sufficient strength and rigidity and having high reliability against vacuum leak is provided. In addition, the image forming apparatus could be manufactured by using the driving mechanism described above.

In the present embodiment, the matrix type electron source substrate having the surface conduction electron-emitting device was used as the electron source substrate 1, but the same result can be obtained by using the ladder type electron source substrate described above. was gotten. This also applies to all the embodiments described in the present invention.

In this embodiment, the number of frit inlets 8 is set to two.
The number of the exhaust pipes 5 is one, and the number of the molding dies 7 is two, but the present invention is not limited to this number.

In the present embodiment, a part of the arc is used as the curve of the inner surface of the mold 7 (the portion in contact with the exhaust pipe fixing frit 6). However, in order to maintain mechanical strength, a smooth curve may be used. The cross-sectional shape of the mold is illustrated in FIGS. 4a, 4b and 4c. Using a shape in which a plurality of arcs are smoothly connected (Fig. 4a), a shape in which a plurality of straight lines and a plurality of arcs are connected smoothly (Fig. 4b), or a shape in which a plurality of straight lines are connected smoothly (Fig. 4c) Also obtained similar results.

Similar results were obtained even when the surface of the mold 7 contacting the frit was coated with a metal such as silver having poor adhesion to the frit.

In the present embodiment, as a method of manufacturing the envelope 9, the electron source substrate 1, the face plate 2 and the support frame 3 are simultaneously fired and fixed by using the frit 4 for sealing. The manufacturing method of the container 9 is not limited to this, and other manufacturing methods may be used. Further, even when the exhaust pipe was connected at the same time when the envelope was made by firing, the same result as above was obtained. This also applies to all the embodiments described in the present invention. (Embodiment 2) FIG. 5 is an enlarged sectional view of an image forming apparatus for explaining a second embodiment.

In FIG. 5, numeral 11 is a molding die for controlling the firing shape of the exhaust pipe fixing frit 6.

A perspective view of the molding die 11 is shown in FIG. In FIG. 7, 10 is a dividing line, and the molding die 11 is a dividing line 1.
Divide into two at 0.

Next, the manufacturing method will be described. Electron source substrate 1,
The face plate 2, the support frame 3, and the frit 4 for sealing are arranged and fixed at predetermined positions (a fixing jig is not shown), and baked and fixed to form the envelope 9. Next, the exhaust pipe 5 is installed on the exhaust pipe through hole 5a substantially vertically to the face plate 2 (a fixing jig is not shown), and an exhaust pipe fixing frit is provided between the exhaust pipe 5 and the face plate 2. A fixed amount was applied to the joint portion, a molding die 11 was placed on the joint portion, and firing and sealing were performed. After sealing, the mold 11 was separated from the dividing line 10 and removed from the exhaust pipe fixing frit 6. The molding die 11 was made by press working using aluminum that is easily separated from the frit glass after firing. Moreover, the same result was obtained when the forming die 7 was produced by cutting.

FIG. 6 is an enlarged cross-sectional view of the image forming apparatus manufactured as a result of the above. In the connection between the envelope 9 and the exhaust pipe 5, the shape of the frit after firing is controlled, and an image display device (display panel) having sufficient strength and rigidity and having high reliability against vacuum leak is provided. The image forming apparatus could be manufactured by using the above-mentioned driving mechanism. (Third Embodiment) FIG. 8 is an enlarged sectional view of an image forming apparatus for explaining a third embodiment.

In FIG. 8, 13 is a tablet and 14 is a molding die.

Next, the manufacturing method will be described. The frit tablet 13 is manufactured in advance by solidifying the frit into a predetermined shape by firing or press molding.
FIG. 10 shows a perspective view of the tablet 13. The envelope 9 is formed in the same manner as in the above-described first embodiment, and then the exhaust pipe 5 is installed on the exhaust pipe through hole 5a in combination with the molding die 14 and the tablet 13 substantially vertically to the face plate. (Fixing jig is not shown). The molding die 14 used was the same as the molding die 11 used in Example 2. Then, it was baked and sealed. After sealing, the mold 14 was removed.

FIG. 9 is an enlarged cross-sectional view of the image forming apparatus (display panel) manufactured as a result of the above. In the connection between the envelope 9 and the exhaust pipe 5, it is possible to control the shape of the frit after firing, have sufficient strength and rigidity, and have high reliability against vacuum leaks (display panel).
Was manufactured, and an image forming apparatus could be manufactured using the above-mentioned drive mechanism.

In the present invention, the shape of the outside of the molding die, that is, the shape of the portion that does not contact the exhaust pipe fixing frit 6 is not particularly limited. FIG. 11 shows a method of manufacturing an image forming apparatus using the doughnut-shaped forming die 16. In FIG. 11, 16 is a doughnut-shaped forming die. The manufacturing method is the same as in the above embodiment. Although the exhaust pipe 5 is connected to the face plate 2 when the exhaust pipe 5 is connected to the envelope 9 in this embodiment, it may be connected to the electron source substrate 1 or the support frame 3. This is effective when there is no place to provide the exhaust pipe through hole 5a in the face plate 2. FIG. 12 shows the exhaust pipe 5 connected to the support frame 3 through the exhaust pipe through holes 15 provided in the support frame 3. Similarly, in the connection between the exhaust pipe 5 and the envelope 9,
Similar results were obtained when the exhaust pipe 5 was connected to the electron source substrate 1.

The above-described connection between the exhaust pipe 5 and the envelope 9 has the same results with respect to any of the electron source substrate 1, the face plate 2 and the support frame 3 over all the embodiments of the present invention. Was given.

[0128]

As described above, according to the present invention,
In an image forming apparatus using an electron-emitting device, particularly a surface conduction electron-emitting device, it becomes possible to join an exhaust pipe having high strength and rigidity and reliability against vacuum leak, which facilitates the manufacturing of the image-forming apparatus and Yield improved.

[Brief description of drawings]

FIG. 1 is an enlarged cross-sectional view of an image forming apparatus for explaining a first embodiment.

FIG. 2 is an enlarged cross-sectional view of the image forming apparatus (display panel) manufactured in the first embodiment.

FIG. 3 is a perspective view of a molding die used in the first embodiment.

FIG. 4 is a cross-sectional view showing a mold having a different inner surface shape, where a is a mold formed by a curved line in which arcs are smoothly connected, and b
Is a forming die formed by a curve in which a plurality of straight lines and a plurality of arcs are smoothly connected, and c is a forming die formed by a curve in which a plurality of straight lines are smoothly connected.

FIG. 5 is an enlarged cross-sectional view of the image forming apparatus for explaining the second embodiment.

FIG. 6 is an enlarged cross-sectional view of the image forming apparatus (display panel) manufactured in the second embodiment.

FIG. 7 is a perspective view showing a molding die used in a second embodiment.

FIG. 8 is an enlarged cross-sectional view of an image forming apparatus for explaining a third embodiment.

FIG. 9 is an enlarged cross-sectional view of the image forming apparatus (display panel) manufactured in the third embodiment.

FIG. 10 is a perspective view of a molding die used in a third embodiment.

FIG. 11 is an enlarged cross-sectional view illustrating another embodiment of the present invention.

FIG. 12 is an enlarged cross-sectional view of an image forming apparatus in which an exhaust pipe is connected to a support frame.

FIG. 13 is a schematic plan view (a) and a sectional view (b) showing a structural example of a basic surface conduction electron-emitting device used in the present invention.

FIG. 14 is a schematic cross-sectional view showing a structural example of a basic vertical surface conduction electron-emitting device used in the present invention.

FIG. 15 shows an example of a method of manufacturing a surface conduction electron-emitting device, in which (a), (b) and (c) show respective steps.

16 (a) and 16 (b) are graphs showing voltage waveform examples of different energization forming.

FIG. 17 is a schematic configuration diagram showing an example of a measurement / evaluation apparatus for measuring electron emission characteristics.

FIG. 18 is an explanatory diagram showing a configuration of an electron source having a simple matrix arrangement.

FIG. 19 is a schematic configuration perspective view of an image forming apparatus.

FIG. 20 is an explanatory diagram showing a configuration of two types of fluorescent films of (a) and (b).

FIG. 21 is a block diagram of an image forming apparatus having a drive circuit for displaying in accordance with an NTSC television signal.

FIG. 22 is an explanatory diagram showing a configuration of an electron source having a ladder arrangement.

FIG. 23 is a schematic perspective view of an image forming apparatus incorporating an electron source arranged in a ladder.

FIG. 24 is a plan view showing a configuration of a conventional surface conduction electron-emitting device.

FIG. 25 is a cross-sectional view showing a configuration example of a conventional image forming apparatus.

FIG. 26 is a schematic perspective view showing a tablet used in a conventional method for manufacturing an image forming apparatus.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Electron source substrate 2 Face plate 3 Support frame 4 Sealing frit 5 Exhaust pipe 5a Exhaust through hole 6 Exhaust pipe fixing frit 7 Mold 8 Frit inlet 9 Envelope 10 Dividing line 11 Mold 13 Tablet 14 Mold 15 Exhaust Pipe Through Hole 16 Mold 101 Substrate 101a Exhaust Pipe Through Hole 102 Cover Glass 103 Sealing Frit 104 Exhaust Pipe 105 Tablet 201 Substrate 202 Element Electrode 203 Element Electrode 204 Conductive Thin Film 205 Electron Emitting Section 221 Step Forming Section 250 Element Conductive thin film 20 between electrodes 202 and 203
Ammeter 251 for measuring the device current If flowing through the device 251 Power supply 253 for applying the device voltage Vf to the electron-emitting device 253 High-voltage power supply 254 for applying the voltage to the anode electrode 254 Emitted from the electron-emitting portion of the device Emission current I
Anode electrode 252 for capturing e. Ammeter for measuring emission current Ie emitted from the electron emission part 205 of the element 255 Vacuum device 256 Exhaust pump 271 Electron source substrate 272 X-direction wiring 273 Y-direction wiring 274 Surface conduction Electron-emitting device 275 Wiring 281 Rear plate 282 Support frame 283 Glass substrate 284 Fluorescent film 285 Metal back 286 Face plate 287 High voltage terminal 288 Envelope 291 Black conductive material 292 Phosphor 301 Image forming device 302 Scanning circuit 303 Control circuit 304 Shift Register 305 Line memory 306 Synchronization signal separation circuit 307 Modulation signal generator 310 Electron source substrate 311 Electron emission element 312 Dx1 to Dx10 are common wiring for wiring the electron emission element 320 Grid electrode 321 electron Holes 322 for passing Dox1, Dox2 consisting · · · Doxm vessel terminals 323 G1 is connected to the grid electrode 320, G
2, ... Gn external terminal Vx, Va DC voltage line

Claims (12)

[Claims] 1. An electron source substrate including a plurality of electron-emitting devices and device electrodes, a face plate on which a member to be irradiated which is arranged facing the electron-source substrate and receives electrons emitted from the electron-emitting devices is mounted, and the electrons. In a method of manufacturing an image forming apparatus, in which an exhaust pipe communicating between the inside and outside of the envelope is fixed to an envelope formed by a support frame arranged between a source substrate and the face plate, the exhaust pipe is A method of manufacturing an image forming apparatus, comprising a step of controlling a shape of a frit for fixing an exhaust pipe fixed to the envelope after firing. 2. The method of manufacturing an image forming apparatus according to claim 1, wherein in the step of controlling the shape, the exhaust pipe fixing frit is baked and fixed while being covered with a molding die. 3. The mold has a frit inlet, the fixing portion of the exhaust pipe and the envelope is covered with the mold, and then the exhaust pipe is fixed from the frit inlet of the mold. The method for manufacturing an image forming apparatus according to claim 1, wherein the frit for use is poured and then baked and fixed. 4. The exhaust pipe fixing frit is applied to a connecting portion between the exhaust pipe and the envelope, and then the exhaust pipe fixing frit is covered with the molding die and baked and fixed. Manufacturing method of image forming apparatus. 5. A frit glass tablet pre-baked or press-molded and the exhaust pipe are arranged at a connecting portion between the envelope and the exhaust pipe, and the tablet is covered with the molding die to be fixed by baking. Claim 1 or 2
A method for manufacturing an image forming apparatus according to item 1. 6. The method of manufacturing an image forming apparatus according to claim 1, wherein a cross-sectional shape of a surface of the forming die which is in contact with the exhaust pipe fixing frit along the axial direction is a part of an arc. 7. A smooth curve formed by a plurality of straight lines or a part of an arc and a plurality of straight lines in a cross-sectional shape along the axial direction of a surface of the molding die which is in contact with the exhaust pipe fixing frit. 5. The method for manufacturing an image forming apparatus according to any one of 5 above. 8. The method of manufacturing an image forming apparatus according to claim 1, wherein a surface of the molding die that is in contact with the exhaust pipe fixing frit and the exhaust pipe form a gradual proximity line. 9. The method of manufacturing an image forming apparatus according to claim 1, wherein a connecting portion between the exhaust pipe and the envelope is the face plate. 10. The method of manufacturing an image forming apparatus according to claim 1, wherein a connection portion between the exhaust pipe and the envelope is the electron source substrate. 11. The method of manufacturing an image forming apparatus according to claim 1, wherein a connecting portion between the exhaust pipe and the envelope is the support frame. 12. The method for manufacturing an image forming apparatus according to claim 1, wherein the electron-emitting device is a surface conduction electron-emitting device.