JP3188602B2 - Surface conduction electron-emitting device, electron source, and method of manufacturing image forming apparatus - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a surface conduction electron-emitting device, a surface conduction electron-emitting device manufactured by the method, and an electron source substrate, a display panel, and an image forming device having the electron-emitting device. Related to the device.

[0002]

2. Description of the Related Art Conventionally, two types of electron-emitting devices, a thermionic electron source and a cold cathode electron source, are known. Cold cathode electron sources include
Field emission type (hereinafter, referred to as “FE type”) electron emission element,
There are a metal-insulating layer-metal type (hereinafter, referred to as "MIM type") electron-emitting device, a surface conduction electron-emitting device, and the like. As an example of the FE type electron-emitting device, W. P. Dyke and
W. W. Dolan, "Field emissio
n ", Advanced Electron Phy
sics, 8, 89 (1956) or C.I. A. Spi
ndt, "Physical Properties
of thin-film field emissi
on cathodes with mollybden
ium ", J. Appl. Phys., 47, 5248.
(1976) are known. Examples of MIM type electron-emitting devices include C.I. A. Me
ad, "The tunnel-emission a
mplifier, "J. Appl. Phys., 3
2, 646 (1961) is known. Examples of surface conduction electron-emitting devices include:
M. I. Elinson, Radio Eng. Ele
ctron Phys. , 10 (1965).

The surface conduction electron-emitting device utilizes a phenomenon in which electrons are emitted by passing a current through a small-area thin film formed on a substrate in parallel with the film surface. As this surface conduction electron-emitting device, one using a SnO2 thin film (MI Elinson, Radio En)
g. Electron Phys. , 10 (196
5), using an Au thin film (G. Dittmer, “T
Hin Solid Films ", 9, 317 (19
72)), an In ₂ O ₃ —SnO ₂ thin film (MH)
artwell and C.I. G. FIG. Fonstad,
"IEEE Trans. ED Conf.", 519
(1975)), using a carbon thin film (Hisashi Araki)
In addition, vacuum, Vol. 26, No. 1, p. 22 (1983)) and the like have been reported.

[0004] As a typical device configuration of these surface conduction electron-emitting devices, the above-mentioned M.I. The device configuration of Hartwell et al. Is shown in FIG. The conductive thin film (3) is made of a thin film such as a metal oxide and is formed on the substrate (1) by sputtering in an H-shaped pattern. An electron emitting portion (4) is formed on the conductive thin film (3) by an energization process called energization forming described later. The interval La in FIG.
0.5 to 1 mm and the interval Wa are set to 0.1 mm. Since the position and shape of the electron-emitting portion (4) are unknown, they are shown as schematic diagrams.

Conventionally, in the formation of these surface conduction electron-emitting devices, a conductive thin film (3) is used before electron emission.
In general, an electron emission portion (4) is formed in advance by applying an energization process called energization forming. The energization forming is to apply a direct current or a very slowly increasing voltage, for example, about 1 V / min, to both ends of the conductive thin film (3) and to energize the conductive thin film (3) to locally break, deform, or alter the conductive thin film. Forming the electron emission portion (4) having a high resistance. As described above, in the surface conduction electron-emitting device obtained by the energization forming process, electrons are emitted from the electron-emitting portion (4) by applying a voltage to the conductive thin film (3) and flowing a current through the device. . The emission of electrons is
This is performed from the vicinity of the crack in the electron emission portion (4).

The above-mentioned surface conduction electron-emitting device has a simple structure and is easy to manufacture, so that there is an advantage that a large number of electron-emitting devices can be arrayed over a large area. Therefore, various applications are being studied by taking advantage of this feature. For example, a display device such as a charged beam source and an image forming apparatus may be used.

FIG. 14 shows the structure of an electron-emitting device disclosed by the present applicant in Japanese Patent Application Laid-Open No. 2-56822. In FIG. 1, reference numeral 1 denotes a substrate, 2 denotes an element electrode, 3 denotes a conductive thin film, and 4 denotes an electron-emitting portion. There are various methods for manufacturing the electron-emitting device. For example, the device electrode (2) is formed on the substrate 1 by a general vacuum deposition technique, a photolithography technique, or the like. Next, a conductive thin film (3) is formed by a dispersion coating method or the like. After that, a voltage is applied to the device electrode (2), and the electron emission portion (4) is formed by applying an electric current.

[0008]

In the manufacture of such a surface conduction electron-emitting device, the device electrodes are formed by using a general semiconductor manufacturing technology such as vacuum film forming, photolithography, and etching technology. I was going. However, in manufacturing an image forming apparatus, a large number of expensive manufacturing apparatuses are required as the screen size of the apparatus increases, and there is a problem that manufacturing costs increase.

One of the techniques for solving this problem is laser processing. However, there have been problems such as swelling of the processed end portion which leads to deterioration of device characteristics and adhesion of flying objects to the metal surface.

Accordingly, an object of the present invention is to solve the above-mentioned problems and to manufacture a surface-conduction type electron-emitting device for a large screen, which has a low manufacturing cost and provides a good image by manufacturing the device electrode by laser processing. Is to provide a way. Another object of the present invention is to provide a surface conduction electron-emitting device manufactured by the method and an electron source substrate, a display panel, and an image forming apparatus including the electron-emitting device.

[0011]

Means for Solving the Problems The invention according to the present application relates to the following matters. 1. At least one pair of device electrodes, a conductive thin film formed between the device electrodes across the pair of device electrodes, and a surface conduction device provided with an electron emission portion formed on a part of the conductive thin film on a substrate. (Step 1) a first step of forming a first layer, which is an electrode member for the device electrode, on a substrate, and (Step 2) a material different from the first layer. A second step in which a second layer made of a resist having a transmittance of 80% or more in the wavelength band of the laser used in the third step is laminated on the first layer and formed (step 3).
Irradiate the laser, the first part of the laser-irradiated part
A third step of removing the layer and the second layer from the substrate surface to process the device electrode into a desired shape, and (step 4) a fourth step of removing only the second layer, thereby producing the above-mentioned 1st step.
A method of manufacturing a surface conduction electron-emitting device, comprising forming a pair of device electrodes. 2. At least one pair of device electrodes, a conductive thin film formed between the device electrodes across the pair of device electrodes, and a surface conduction device provided with an electron emission portion formed on a part of the conductive thin film on a substrate. (Step 1) a first step of forming a first layer, which is an electrode member for the device electrode, on a substrate, and (Step 2) a material different from the first layer. A second step in which a second layer made of a metal having an etching rate higher than that of the first layer in the fourth step is formed by laminating the second layer on the first layer; A third step of removing the first layer and the second layer from the substrate surface to process the element electrode into a desired shape; and (step 4) a fourth step of removing only the second layer by etching. The formation of the pair of device electrodes is characterized in that Method of manufacturing a surface conduction electron-emitting device according to. 3. 3. The surface conduction according to claim 2, wherein the etching in the fourth step is performed by wet etching, and an etching rate ratio (second layer / first layer) of the second layer to the first layer is 10 or more. Manufacturing method of an electron-emitting device. 4. 4. The method of manufacturing a surface conduction electron-emitting device according to any one of the above items 1 to 3, wherein the first layer and / or the second layer is formed by a method selected from a vacuum forming method, a coating method, and a printing method. Method. 5. A method for manufacturing an electron source having a surface conduction electron-emitting device, comprising: performing the surface conduction electron-emitting device by the method according to any one of the above (1) to (4). . 6. 6. The method according to claim 5, wherein a plurality of the electron-emitting devices are arranged on the same substrate. 7. The plurality of electron-emitting devices are disposed between a plurality of X-direction wirings formed on the substrate and a plurality of Y-direction wirings that are electrically insulated from the plurality of X-direction wirings and formed in a substantially vertical direction. 7. The electron source according to claim 6, wherein one of the pair of element electrodes is electrically connected to the X-direction wiring, and the other element electrode is electrically connected to the Y-direction wiring. Manufacturing method. 8. The plurality of electron-emitting devices are arranged between two adjacent wires of a plurality of wires arranged in the same direction on the substrate, and one of the pair of device electrodes is connected to one of two adjacent wires. 7. The method of manufacturing an electron source according to claim 6, wherein one of the remaining element electrodes is connected to the other of the two adjacent wirings. 9. A method of manufacturing an image forming apparatus comprising an envelope having an electron source and a substrate on which an image forming member on which an image is formed by electrons emitted from the electron source is provided. 8. A method for manufacturing an image forming apparatus, wherein the manufacturing is performed by the manufacturing method according to the above item 6 or 7. 10. It is constituted by an envelope having an electron source, a control electrode for controlling electrons emitted from the electron source, and a substrate on which an image forming member on which an image is formed by the electrons controlled by the control electrode is formed. A method for manufacturing an image forming apparatus, comprising: manufacturing the electron source according to the manufacturing method described in (8). 11. 11. The method of manufacturing an image forming apparatus according to the above item 9 or 10, wherein the image forming apparatus is any one of a television broadcast, a video conference system, a computer, and an optical printer configured using a photosensitive drum.

[0012]

[0013]

[0014]

[0015]

[0016]

[0017]

Hereinafter, the present invention will be described in detail with reference to the drawings. As the surface conduction electron-emitting device, there are generally two types, a flat surface conduction electron-emitting device and a vertical surface conduction electron-emitting device. It is. Hereinafter, the “planar surface conduction electron-emitting device” is simply referred to as “surface conduction electron-emitting device”.

FIG. 1 is a schematic plan view and a sectional view showing the basic structure of a surface conduction electron-emitting device. In FIG. 1, reference numeral 1 denotes a substrate, 2 denotes an element electrode, 3 denotes a conductive thin film, and 4 denotes an electric emission portion.

As the substrate (1), quartz glass, glass containing a small amount of impurities such as Na, blue plate glass, SiO ₂
A glass substrate formed on the surface, a ceramic substrate such as alumina, or the like is used.

The method of manufacturing the element electrode (2) will be described in detail later. According to the manufacturing method of the present invention, a first layer which is an electrode member is formed on a substrate, and thereafter, a material different from the first layer is used. A second layer is formed, the device electrode is processed into a desired shape by laser irradiation, and finally, only the second layer is removed.

At this time, the distance (L) between the pair of device electrodes is
Since it is desirable that the voltage applied between the device electrodes is low, it is desirable that the voltage be several micrometers to several tens of micrometers in order to manufacture the device with good reproducibility. Element electrode length (W1)
Is preferably several micrometers to several hundred micrometers from the electrode resistance and electron emission characteristics. Further, the film thickness of the device electrode (2) is preferably several hundred angstroms to several micrometers.

[0023]

Next, a method for manufacturing the surface conduction electron-emitting device of the present invention will be described. First, a method for forming an element electrode will be described with reference to FIG.

Step 1: On the substrate (1), a metal (electrode member) to be an element electrode later is formed as a first layer (21) (FIG. 2A). This metal includes Ni, Au, M
o, W, Pt, Cu, Pd and the like. As a method of forming the film, a vacuum forming method is usually used.
A method may be used in which a metal-containing organic substance is formed by a usual coating method or printing method, and an organic component is removed from the film by firing, or the like.

Step 2: The second layer (2) is made of a material different from that of the first layer.
2) is formed (FIG. 2B). This film formation is performed in the same manner as the formation of the first layer. As the material of the second layer, it is desirable to use a material that can be easily removed in a later step. In particular, a laser-permeable resist or a metal having a higher etching rate than the material of the first layer is preferable.

As the resist transmitting the laser, a resist having a transmittance of 80% or more in the wavelength region of the laser to be irradiated is suitable. Preferably, a resist having a transmittance of 90% or more is used.

Examples of the metal having a high etching rate include C
r, Al, Ti and the like. In the case of dry etching, a combination of the second layer and the first layer (second layer / first layer)
Is Cr / Au, Ti / W and the like. The etching rate ratio (second layer / first layer) at this time is preferably larger than 1.0, and the larger the ratio, the more preferable. On the other hand, in the case of wet etching, the second layer and the first
The combination of layers (second layer / first layer) is Al / P
t, Cr / Au and the like. The etching rate ratio (second layer / first layer) at this time is preferably 10 or more, and the larger the ratio, the more preferable.

Step 3: irradiating the film on the substrate with a laser,
The device electrode is processed into a desired shape. At this time, the film (the first layer and the second layer) in the portion irradiated with the laser is selectively removed from the substrate surface (FIG. 2C).

Here, as a method of irradiating a laser,
For example, as shown in FIG.
Focused finely by the lens (35), the substrate (1) and the laser
-How to process by changing the relative positional relationship with light, and figure
As shown in FIG. 4, the laser beam is formed by the mask (41).
Mold (reduce if necessary) and on the surface of the substrate (1)
Irradiation method as laser light of any shape can be applied
You. The wavelength and power of the laser required to remove the film
-Density is determined by the type of film material and its thickness
However, the wavelength is about 0.2 to 10 μm,
The degree is 1 × 10 ⁷W / cm^TwoThe above is effective. did
As an effective laser oscillator, Nd: YAG laser
User (fundamental wave, 2nd long wave, 3rd long wave, etc.) and
An excimer laser such as KrF is a suitable laser.
You. Specifically, for example, Nd with a normal Q switch:
Uses YAG second high-long-wave (0.532 μm wavelength) laser
And process it. Q switch frequency averaged at 1 kHz
A laser beam of about 5 watts is applied to the aperture (34)
And about 1 mm in diameter on the film surface on the substrate using a lens (35).
Focus on 0 μm and move the stage (36) to move the substrate
When the line is operated at 10 mm / sec, the part of the film irradiated with the laser
Is selectively removed to form a groove having a width of about 10 μm.
It is.

As the Nd: YAG laser, a fundamental wave (wavelength 1.06 μm), a third longwave (wavelength 0.353 μm), and a fourth longwave (wavelength 0.265 μm) besides the second longwave.
m) etc. can be applied.

As an example using a laser other than the Nd: YAG laser, a KrF excimer laser (wavelength: 0.24
8 μm). A laser beam having an oscillation frequency of 200 Hz and an average output of about 10 watts is formed into a width of about 10 μm and a length of about 300 μm on the film surface of the substrate by using a slit and a lens, and 50 μm is formed on the film surface of the fixed substrate.
By pulse irradiation, only the portion of the film irradiated with the laser was selectively removed, and a groove having a width of about 10 μm and a length of about 300 μm was formed.

Step 4: Only the film of the second layer is removed (FIG. 2)
(D)). This removal method includes etching, peeling, and the like, depending on the type of the material of the second layer. In any case, a method that has little effect on the film of the first layer is desirable.

Next, a surface conduction electron-emitting device using the device electrode manufactured by the above method and a method of manufacturing the same will be described. First, a conductive thin film (3) is formed on a substrate (FIG. 5A) provided with an element electrode manufactured by the above method (FIG. 5B).

The conductive thin film (3) is particularly preferably a fine particle film composed of fine particles in order to obtain good electron emission characteristics. The fine particle film described here is a film in which a plurality of fine particles are gathered. The fine structure refers not only to a film in which fine particles are individually dispersed and arranged, but also to a film in which fine particles are adjacent to each other or overlap each other (including an island shape). The particle size of the fine particles is suitably several angstroms to several thousand angstroms, and preferably 10 angstroms to 200 angstroms.

The thickness of the conductive thin film (3) depends on the step coverage of the device electrode (2), the resistance value between the device electrodes,
It is appropriately set depending on the energizing forming conditions and the like described later, but is preferably several Å to several thousand Å, more preferably 10 Å to 500 Å. Also, the sheet resistance of the conductive thin film is suitably 10 ³ to 10 ⁷ ohm / □.

The material constituting the conductive thin film (3) is Pd
・ Pt ・ Ru ・ Ag ・ Au ・ Ti ・ In ・ Cu ・ Cr ・
Metals such as Fe, Zn, Sn, Ta, W, Pb, PdO
Oxides such as SnO ₂ · In ₂ O ₃ · PbO · Sb ₂ O ₃ ;
borides such as _{fB 2 · ZrB 2 · LaB 6} · CeB 6 · YB 4 · GdB 4, TiC · ZrC · HfC · TaC · SiC
-Carbides such as WC, nitrides such as TiN / ZrN / HfN, semiconductors such as Si / Ge, and carbon.

Next, an electron emitting portion (4) is formed by energization forming or the like (FIG. 5C). Electron emission part (4)
Is a high-resistance crack portion formed in a part of the conductive thin film (3), and the crack may contain conductive fine particles having a particle size of several angstroms to several hundred angstroms. These conductive fine particles contain at least a part of the elements constituting the conductive thin film (3). Further, the electron emitting portion (4) and the conductive thin film (3) in the vicinity thereof may contain carbon or a carbon compound.

In the energization forming, an electric current is applied from a power source (not shown) between the element electrodes (2) to locally break, deform, or alter the conductive thin film (3) to form a portion having a changed structure. It is. The site where the structure is locally changed is the electron emitting portion (4).

FIG. 6 shows an example of the voltage waveform of the energization forming. The voltage waveform is particularly preferably a pulse waveform. When the pulse peak value is constant and the voltage pulse is continuously applied (FIG. 6A), or when the voltage pulse is applied while increasing the pulse peak value (FIG. 6). (B)).

When a voltage pulse having a constant pulse peak value is continuously applied (FIG. 6A), the pulse width (T1) of the voltage waveform is 1 microsecond to 10 milliseconds, and the pulse interval (T2) Is set to 10 microseconds to 100 milliseconds, and the peak value of the triangular wave (peak voltage at the time of energization forming) is appropriately selected according to the form of the surface conduction electron-emitting device, and in an appropriate vacuum atmosphere, for example, about 10 ^-5 torr. Is applied for several seconds to several tens of minutes under the vacuum atmosphere described above. The voltage waveform applied between the device electrodes is not limited to a triangular wave, and may be a desired voltage waveform such as a rectangular wave.

In the case where the voltage pulse is applied while increasing the pulse peak value (FIG. 6B), T1 and T2 are the same as in the above case (FIG. 6A), and the peak value of the triangular wave (the current The peak voltage during forming) is, for example, 0.1
The voltage is increased in steps of about V steps and applied under an appropriate vacuum atmosphere. In the energization forming process in this case, during the pulse interval (T2), the element current (If) is applied at a voltage that does not locally destroy or deform the conductive thin film (3), for example, a voltage of about 0.1 V. A resistance value is obtained by measurement, and at this time, for example, if a resistance of 1 M ohm or more is indicated, the energization forming process is terminated.

After the energization forming process is completed, it is desirable to perform an activation process on the device. The activation process is
For example, at a degree of vacuum of about 10 ^-4 to 10 ^-5 torr, a voltage pulse having a constant pulse peak value is repeatedly applied to conduct carbon or a carbon compound caused by an organic substance existing in a vacuum, similarly to the energization forming. This is a process in which the device current (If) and the emission current (Ie) are remarkably changed by being deposited on a conductive thin film. In this activation process, for example, while measuring the device current (If) and the emission current (Ie), the emission current (I
It ends when e) is saturated. Further, it is desirable that the applied voltage pulse be performed at an operation drive voltage. In the activation treatment, carbon or a carbon compound refers to graphite (both single crystal and polycrystal) and amorphous carbon (amorphous carbon and a mixture of amorphous carbon and polycrystalline graphite). ). The thickness of the film formed by depositing these on the conductive thin film is appropriately 500 Å or less, and preferably 300 Å or less.

The operation driving atmosphere of the electron-emitting device manufactured as described above is preferably an atmosphere having a higher vacuum than the energization forming process and the activation process. For example, the degree of vacuum is about 10 ⁻⁶ torr or more, preferably an ultrahigh vacuum system, and a degree of vacuum in which carbon or a carbon compound is hardly newly deposited on the conductive thin film. By doing so, the device current (If) and the emission current (Ie)
Can be stabilized.

It is desirable to drive the electron-emitting device after heating at 80 to 150 ° C. in the above-described high vacuum atmosphere.

Next, the electron source substrate of the present invention will be described. The electron source substrate of the present invention is formed by arranging a plurality of surface conduction electron-emitting devices on a substrate. As a method of arranging the surface-conduction electron-emitting devices, a ladder-type arrangement in which the surface-conduction electron-emitting devices are arranged in parallel and both ends of each element are connected by wiring (hereinafter, referred to as a “ladder-type arrangement”). A simple matrix arrangement (hereinafter, referred to as a "matrix-type arrangement") in which an X-axis direction wiring and a Y-axis direction wiring are connected to a pair of element electrodes of a surface conduction electron-emitting device, respectively, is exemplified. Note that the image forming apparatus having the ladder-shaped arrangement of the electron source substrates requires a control electrode (for example, a grid electrode (121) in FIG. 12) which is an electrode for controlling the electron emission from the electron-emitting device.

Hereinafter, the configuration of the electron source substrate having a matrix arrangement will be described with reference to FIG. The configuration of the electron source substrate of the matrix type arrangement includes the substrate (1), the X-axis direction wiring (7
1), a wiring in the Y-axis direction (72), a surface conduction electron-emitting device (73), a connection (74), and the like.

The substrate (1) is the above-mentioned glass substrate or the like, and the shape is appropriately set according to the application.

The X-axis direction wiring (61) includes Dx1, Dx2,.
.., Consisting of m wirings denoted by Dxm. The Y-axis direction wiring (62) is denoted by Dy1, Dy2,.
(M and n are both positive numbers). Further, the material, thickness and width of the wiring are appropriately set so that a substantially uniform voltage is supplied to a large number of surface conduction electron-emitting devices (73). These m X-axis wirings (71) and n
The Y-axis direction wiring (72) is electrically separated from the Y-direction wiring (72) by an interlayer insulating film (not shown) to form a wiring in a matrix arrangement. The interlayer insulating film (not shown) is formed on the entire surface of the substrate (1) on which the X-axis direction wiring (71) is formed or on a desired region of a part thereof. The X-axis direction wiring (71) and the Y-axis direction wiring (72) are respectively drawn to external terminals. In addition, m X-axis wirings (71) and n Y-axis wirings (7
2) are electrically connected to device electrodes (not shown) of the respective surface conduction electron-emitting devices by connection (74). At this time, the surface conduction electron-emitting device (73)
May be formed on the substrate (1) or on an interlayer insulating film (not shown). Note that the X-axis direction wiring (71)
It is electrically connected to a scanning signal generating means (for example, a scanning circuit (102) in FIG. 10) for applying a scanning signal for scanning the surface conduction electron-emitting devices (73) in each column in the axial direction according to an input signal. Have been. On the other hand, the Y-direction wiring (72) has surface conduction electron-emitting devices (73) in each row in the Y-axis direction.
A modulation signal generator for applying a modulation signal for modulating a signal according to an input signal (for example, a modulation signal generator (1
07)). The driving voltage applied to each surface conduction electron-emitting device is supplied as a difference voltage between a scanning signal and a modulation signal applied to the device.

In the above configuration, individual elements can be selected and driven independently only by wiring in a simple matrix arrangement.

Next, a display panel provided with an electron source substrate having a matrix arrangement will be described with reference to FIGS. FIG. 8 is a basic configuration diagram of a display panel of the present invention.
FIG. 9 is a plan view of a fluorescent film used for the display panel of the present invention.

In FIG. 8, the display panel of the present invention comprises an electron source substrate (81), a rear plate (82) for fixing the electron source substrate, and a fluorescent film (84) on the inner surface of a glass substrate (83).
It comprises a face plate (86) provided with a metal back (85) and the like, a support frame (87) and the like. Electron source substrate (8
1) On the X-axis direction wiring (71) and the Y-axis direction wiring (72) electrically connected to a pair of device electrodes of the surface conduction electron-emitting device (73) are formed.

The envelope (88) is provided with a face plate (8).
6), a support frame (87) and a rear plate (82). The envelope is coated with frit glass or the like, and fired in air or nitrogen at 400 to 500 ° C. for 10 minutes or more, and sealed. The rear plate is mainly an electron source substrate (81)
In order to reinforce the strength of the electron source substrate itself, if the electron source substrate itself has sufficient strength, without using a rear plate, even if the support frame is provided directly on the electron source substrate to form an envelope Good. Further, by providing an anti-atmospheric pressure support member called a spacer between the face plate (86) and the rear plate (82), the envelope may have sufficient strength against atmospheric pressure.

FIG. 9 is a plan view of the fluorescent film (84) in FIG. In the case of a monochrome fluorescent film, it may consist of only a phosphor, but in the case of a color fluorescent film, it is composed of a black conductive material (91) and a phosphor (92), and a black stripe (FIG. 9A) , Black matrix (Fig. 9
(B)) and the like. The purpose of providing the black conductive material is
The purpose of the present invention is to blacken the portions of the three primary color phosphors required for color display between the respective phosphors so as to make color mixing less noticeable, and to suppress a decrease in contrast due to reflection of external light on the phosphor film. As a material of the black conductive material, a material containing graphite as a main component is usually often used. However, the material is not limited to this as long as it is conductive and has little light transmission and reflection. As a method of applying the phosphor on the glass substrate (83), a precipitation method or a printing method is used irrespective of the distinction between monochrome and color.

In FIG. 8, a metal back (85) is usually provided on the inner surface side of the fluorescent film (84). The purpose of the metal back is to prevent the phosphor film from being charged by the irradiated electrons, to improve the brightness by specularly reflecting light emitted to the inner surface side of the phosphor toward the face plate (86), It is used as an electrode for applying a beam acceleration voltage, and to protect a phosphor from damage due to collision of negative ions generated in an envelope. After forming the fluorescent film, the metal back smoothes the inner surface of the fluorescent film (generally called filming).
And then depositing Al (aluminum) by vacuum evaporation or the like. The face plate may be provided with a transparent electrode (not shown) on the outer surface side of the fluorescent film in order to further increase the conductivity of the fluorescent film.

When sealing the envelope (88), when color phosphors are used, it is necessary that the phosphors of each color correspond to the surface-conduction type electron-emitting device, and a sufficient position is required. It is necessary to make adjustments.

The display panel of the present invention formed as described above is sealed at a degree of vacuum of about 10 ^-7 torr through an exhaust pipe (not shown) provided in the envelope. At this time, a getter process may be performed to maintain the degree of vacuum after sealing the envelope. This getter processing is performed immediately before or after sealing, and the getter disposed at a predetermined position (not shown) in the envelope is heated by a heating method such as resistance heating or high-frequency heating to form a vapor-deposited film. Is a process of forming The getter is usually composed mainly of Ba or the like, and a vacuum degree of, for example, 10 ⁻⁵ to 10 ⁻⁷ torr can be maintained by the adsorption action of the deposited film.

Next, referring to the block diagram of FIG. 10, a schematic configuration of a drive circuit for performing television display based on an NTSC television signal using a display panel having an electron source substrate in a matrix type arrangement will be described. explain. This represents one embodiment of the image forming apparatus of the present invention. The configuration of the driving circuit includes a display panel (101), a scanning circuit (1).
02), control circuit (103), shift register (10
4), line memory (105), synchronization signal separation circuit (1)
06), a modulation signal generator (107) and a DC power supply (V
x, Va).

The display panel (101) has terminals (Dox1,
Dox2, ..., Doxm), terminals (Doy1, Doy2, ...)
, Doyn) and a high-voltage terminal (Hv). Terminals (Dox1, Dox2,
.., Doxm), a surface conduction electron-emitting device group arranged in a matrix of m rows and n columns on an electron source substrate in the display panel (101) is sequentially arranged in one row (n elements). A scanning signal for driving is applied. On the other hand, to the terminals (Doy1, Doy2,..., Doyn), a modulation signal for controlling the output electron beam of each of the surface conduction electron-emitting devices in one row selected by the scanning signal is applied. Is done. A DC power supply (Va) is connected to the high voltage terminal (Hv).
Supplies a DC voltage of, for example, 10 kV. This DC voltage is an accelerating voltage for applying sufficient energy to the electron beam output from the surface conduction electron-emitting device to excite the phosphor.

The scanning circuit (102) includes m switching elements (S1, S2,..., Sm) inside, and each switching element outputs the output voltage of the DC voltage source (Vx) or 0V ( Ground level), and select the terminal (Dox1, Dox2,...) Of the display panel (101).
.., Doxm). The switching elements (S1, S2,..., Sm) operate based on the control signal Tscan output from the control circuit (103), but are actually configured by combining switching elements such as FETs. be able to. The DC voltage (Vx) is determined based on the characteristics (electron emission threshold voltage) of the surface conduction electron-emitting device such that the drive voltage applied to the unscanned device is equal to or lower than the electron emission threshold voltage. It is set to output a constant voltage.

The control circuit (103) has a function of matching the operation of each unit so that appropriate display is performed based on an image signal input from the outside. Based on the synchronizing signal Tsync sent from the synchronizing signal separating circuit (106) described below, each control signal of Tscan, Tsft and Tmry is generated for each unit.

The synchronizing signal separating circuit (106) is a circuit for separating a synchronizing signal component and a luminance signal component from an NTSC television signal input from the outside, and uses a frequency separating circuit (filter circuit). Can be configured. The synchronization signal separated by the synchronization signal separation circuit is composed of a vertical synchronization signal and a horizontal synchronization signal.
Expressed as an ATA signal. The signal is a shift register (104)
Is input to

The shift register (104) is for serially / parallel converting the DATA signal input serially in time series for each line of an image, and is sent from the control circuit (103). It operates based on the control signal Tsft. That is, the control signal Tsft may be rephrased as the shift lock of the shift register. The data for one line of the image that has been subjected to the serial / parallel conversion (corresponding to the drive data for n electron emitting elements)
(Id1, Id2,..., Idn) are output from the shift register (104) as n parallel signals.

A line memory (105) is a storage device for storing data of one line of an image for a required time, and a control signal Tmr sent from the control circuit (103).
The parallel signals (Id1, Id2,...,
Idn) is stored. The stored contents are output as parallel signals (Id′1, Id′2,..., Id′n) and input to the modulation signal generator (107).

The modulation signal generator (107) controls each of the surface conduction electron-emitting devices in accordance with each of the parallel signals (Id'1, Id'2, ..., Id'n) of the image data. This is a signal source for appropriately driving and modulating, and the output signal is applied to the surface conduction electron-emitting device in the display panel (101) through the terminals (Doy1, Doy2,..., Doyn).

Here, the surface conduction electron-emitting device of the present invention has the following basic characteristics with respect to the emission current (Ie). That is, a clear threshold voltage (V
th), and electrons are emitted only when a voltage higher than the threshold voltage (Vth) is applied. When a voltage equal to or higher than the threshold (Vth) is applied, the emission current (Ie) also changes in accordance with a change in the voltage applied to the surface conduction electron-emitting device. The value of the threshold voltage (Vth) and the degree of change of the emission current (Ie) may vary depending on the material, configuration, and manufacturing method of the surface conduction electron-emitting device.
The above basic characteristics will be further described. When a pulse-like voltage (hereinafter, referred to as a “voltage pulse”) is applied to the surface conduction electron-emitting device, even if a voltage less than the threshold value (Vth) is applied, electrons are not applied. No emission occurs, but an electron beam is output when a voltage higher than the threshold value (Vth) is applied. At that time, first, the intensity of the output electron beam can be controlled by changing the peak value (Vm) of the voltage pulse. Second, by changing the width (Pw) of the voltage pulse, the total amount of charges of the output electron beam can be controlled.

As a method of driving and modulating the surface conduction electron-emitting device according to an input signal, a voltage modulation method, a pulse modulation method, or the like is used. When implementing the voltage modulation method, the modulation signal generator (107) has a fixed width (P
w) A voltage pulse which generates a voltage pulse but has a voltage modulation type circuit for appropriately modulating the peak value (Vm) of the voltage pulse according to input data is used. When the pulse modulation method is performed, a voltage pulse having a constant peak value (Vm) is generated as a modulation signal generator (107), and the width of the voltage pulse (Pw) is appropriately determined according to input data.
Having a circuit of a pulse modulation system for performing the above-mentioned modulation.

In the image forming apparatus of the present invention, as long as the serial / parallel conversion of the image signal and the storage of the data are performed at a predetermined speed, the shift register and the line memory may be either digital signal type or analog signal type. Absent.

When a digital signal is used, it is necessary to convert the output signal DATA of the synchronization signal separation circuit (106) into a digital signal. This can be achieved by providing an A / D converter at the output of the synchronization signal separation circuit. It is possible. In the voltage modulation method, for example, a D / A conversion circuit may be used for the modulation signal generator (107), and an amplification circuit or the like may be added as necessary. In the pulse modulation method, the modulation signal generator includes, for example, a high-speed oscillator, a counter for calculating the wave number output from the oscillator, and a comparison between the output value of the counter and the output value of the line memory. It can be configured using a circuit in which a comparator (comparator) is combined. If necessary, an amplifier may be added to amplify the modulation signal output from the comparator, in which the pulse width (Pw) is modulated, to the driving voltage of the surface conduction electron-emitting device.

When an analog signal is used, in the voltage modulation method, an amplification circuit using, for example, an operational amplifier or the like may be used for the modulation signal generator (107), and a level shift circuit or the like may be added if necessary. Good. In the pulse modulation method, for example, a voltage control type oscillation circuit (V
CO) may be used, and if necessary, an amplifier for amplifying a signal up to the drive voltage of the surface conduction electron-emitting device may be added.

The configuration of the image forming apparatus described above is a schematic configuration necessary for a suitable image forming apparatus used for display or the like. For example, detailed portions such as materials of each member are limited to those described above. Instead, it is appropriately selected according to the use of the image forming apparatus. Although the NTSC system has been described as an example of the input signal, the present invention is not limited to this system, and various systems such as the PAL system and the SECAM system may be used. TV signals composed of a larger number of scanning lines than these methods, for example, MUS
A high-definition TV system including the E system may be used.

Display of an image by the image forming apparatus completed in this way is performed by using terminals (Dox1, Dox2,...) Of the display panel.
.., Doxm) and terminals (Doy1, Doy2,..., Do)
ym) to apply a voltage to each surface conduction electron-emitting device to emit electrons. At this time, a high voltage is applied to the metal back (85) or the transparent electrode (not shown) through the high voltage terminal (Hv), This is performed by accelerating the emitted electrons and causing them to collide with the fluorescent film (84) to excite and emit light from the phosphor.

Next, a ladder-type electron source substrate and a display panel / image forming apparatus provided with the electron source substrate will be described with reference to FIGS. 11 and 12. FIG.

The configuration of the ladder-type electron source substrate is shown in FIG.
As shown in FIG. 1, a substrate (1), a surface conduction electron-emitting device (73), and a common wiring (111) connected to the surface conduction electron-emitting device. Surface conduction electron-emitting device (73)
Are arranged on the substrate in parallel in the X-axis direction (hereinafter, referred to as “element rows”). A plurality of the element rows are arranged in parallel on the substrate, and a common wiring (111) is provided between the element rows to form a ladder-shaped electron source substrate. At this time, the common wiring (111) between the element rows is
1 (a) or (b). By appropriately applying a driving voltage between the common wires of each element row of the electron source substrate, each element row can be driven independently. That is, a voltage higher than the threshold value (Vth) may be applied to an element row that emits an electron beam, and a voltage lower than the threshold value (Vth) may be applied to an element row that does not emit an electron beam.

FIG. 12 is a basic structural diagram of a display panel of the present invention provided with a ladder-type arrangement of electron source substrates. The difference between this display panel and the display panel provided with the above-mentioned matrix type electron source substrate (FIG. 8) is that the face plate (8
6) and the grid electrode (12) between the electron source substrate (81).
1). Grid electrode (121)
Are provided with a large number of openings (122) through which electrons pass, and external terminals (G1, G2,.
n). The grid electrode (121) is capable of modulating the electron beam emitted from the surface conduction electron-emitting device (73), and is provided in a stripe shape so as to be perpendicular to the ladder-shaped device rows. An opening (112) for letting electrons pass is provided corresponding to each element in position, and has a circular shape. The shape and the installation position of the grid electrode do not necessarily have to be as shown in FIG. The opening (112) may be provided with a large number of passage openings, for example, in a mesh shape, and the grid electrode may be appropriately provided around or near the surface conduction electron-emitting device. On the other hand, the electron source substrate (81) has an external terminal (Dox
1, Dox2,..., Doxm). The external terminals (Dox1, Dox2,..., Doxm) and the external terminal (G) connected to the grid electrode (121).
, Gn) are electrically connected to a control circuit (not shown) to form the image forming apparatus of the present invention.

In the present image forming apparatus having the ladder-shaped arrangement of the electron source substrates, one line of the image is added to the grid electrode column in synchronization with the sequential driving (scanning) of the element rows of the electron source substrate one column at a time. By simultaneously applying the above modulation signals, irradiation of each electron beam to the phosphor can be controlled, and an image can be displayed line by line.

As described above, according to the surface conduction electron-emitting device manufactured by the method of the present invention and the electron source substrate, display panel, and image forming apparatus provided with the electron-emitting device, not only the display device for television broadcasting but also An image forming apparatus suitable for a display device such as a video conference system and a computer can be provided. Further, the present invention can be applied to an image forming apparatus as an optical printer including a photosensitive drum or the like.

[0078]

EXAMPLES The present invention will be further described below with reference to examples, but the present invention is not limited to these examples.

Example 1 In this example, a surface conduction electron-emitting device was manufactured by the method of the present invention, and the surface conduction electron-emitting device was wired in a matrix to form an electron source substrate. To produce a display panel, and further using this display panel to produce an image forming apparatus.

First, the method for manufacturing the device electrode of the surface conduction electron-emitting device of the present invention will be specifically described with reference to FIGS.

Step 1 A viscosity of about 10 was applied on the substrate (1) by screen printing.
A 10,000 cps Au-MOD (organic Au compound paste) was printed. At this time, the screen plate used had a 100 μm square missing pattern (one side of 100 μm) which would later become an element electrode.
μm squares) were arranged and formed in a matrix, and correspondingly, a pattern of about 100 μm square of Au-MOD was formed in a matrix on the substrate. The substrate is heated to 580 ° C. at a rate of 10 ° C./min.
And then cooled to room temperature at a rate of temperature decrease of 10 ° C./min. As a result, the organic component was thermally decomposed and removed from the Au-MOD on the substrate, and an Au film having almost the same shape as before the heat treatment was obtained. The thickness of Au obtained as the first layer is about 0.5 μm.
m. (FIG. 2A) Step 2 A resist (RD2000N manufactured by Hitachi Chemical Co., Ltd.) having a transmittance of 95% or more in a laser wavelength band is entirely coated as a second layer on the Au film by a normal dipping method. Then, it was baked at 80 ° C. for 15 minutes. (FIG. 2 (b)) Step 3 Nd: YAG with Q switch similar to the configuration shown in FIG.
Using the second high-long-wave laser device, the above steps 1 and 2
While irradiating the laser at almost the center of the pattern formed in step 2, the stage (36) was moved and processed. At this time, the Q switch frequency of the laser is 1 kHz, the average output is 5 Watts, the laser beam diameter on the film surface of the substrate is about 10 μm by the aperture and the condensing lens, and the feed speed of the stage (131) is 10 mm / sec. And As a result, the Au film and the resist film were simultaneously removed from only the portion irradiated with the laser. (FIG. 2 (c)) Step 4 Only the resist was dissolved in an organic solvent and removed (FIG. 2 (c)).
(D)). As a result, the distance (L) between the pair of device electrodes is about 10 μm, and the length (W1) of the device electrodes is about 100 μm.
An element electrode made of u was formed.

According to the above-mentioned method, the bulge of the processed end is reduced as compared with the case where laser irradiation is performed without forming a resist, and the Au-MOD dissolved during laser irradiation is reduced.
Was prevented from adhering to the device electrode surface.

Next, a method of manufacturing a surface conduction electron-emitting device and an electron source substrate using the device electrodes manufactured by the above method will be described.

As shown in FIG. 7, an X-axis wiring (71),
An insulating film (not shown) and a Y-axis direction wiring (72) were formed by ordinary vacuum film formation, photolithography, and etching.

Next, a substrate provided with the device electrodes (FIG. 5)
(A)), a conductive thin film (3) was formed as follows (FIG. 5 (b)). An appropriate amount of a butyl acetate solution of a palladium acetate-bis-di-propylamine complex of about 1% by weight in terms of palladium was dropped on the substrate provided with the above-mentioned device electrode, and then immediately rotated at 1000 rpm to be applied.
Thereafter, a heat treatment was performed at 300 ° C. for 10 minutes in the air. After repeating this application and heat treatment three times, patterning is performed by a normal photolithography etching method.
A conductive thin film (3) made of PdO was formed.

Subsequently, an energization process called a forming process was performed. At this time, a voltage as shown in FIG. 6A is applied between the device electrodes in a vacuum atmosphere, and the pulse width (T
1) was performed at a peak value of 15 V using a square wave having a pulse interval (T2) of 10 milliseconds and a millisecond of 1 millisecond. By this energization treatment, the conductive thin film (3) was locally destroyed, deformed and deteriorated to form an electron emitting portion (4) (FIG. 5 (c)).

Using the electron source substrate (FIG. 7) provided with the surface conduction electron-emitting device manufactured as described above, the face plate (86), the support frame (87), and the rear plate are connected as described above. An envelope (88) is formed, sealing is performed to produce a display panel (FIG. 8), and a driving circuit as shown in FIG. 10 for performing television display based on NTSC television signals is provided. An image forming apparatus having the same was manufactured.

The surface conduction electron-emitting device, the electron source substrate, the display panel, and the image forming apparatus of the present embodiment each use the respective manufacturing techniques of the conventional manufacturing methods of vacuum film formation, photolithography, and etching. The same electron emission characteristics and image display characteristics as those manufactured by the method described above.
This is because the swelling of the processed end of the device electrode is reduced, and no scattered metal is adhered to the surface of the device electrode during processing. In addition, by manufacturing the device electrodes by laser processing, there is no increase in cost due to the increase in the size of vacuum deposition equipment, photolithography equipment, etching equipment, etc. due to the enlargement of the screen, and the increase in the number of equipment, and the manufacturing method is simplified. did.

Example 2 In this example, a surface conduction electron-emitting device was manufactured by the method of the present invention, and the surface conduction electron-emitting device was wired in a ladder form to form an electron source substrate. To produce a display panel, and further using this display panel to produce an image forming apparatus.

First, the method for manufacturing the device electrode of the surface conduction electron-emitting device of the present invention will be specifically described with reference to FIGS.

Step 1 Pt-MOD (organic Pt compound paste) having a viscosity of about 50,000 cps was printed on the substrate (1) by a screen printing method. At this time, on the screen plate used, 100 μm square through-hole patterns, which will be element electrodes later, are arranged and formed in a matrix.
A pattern of 0 μm square was formed in a matrix on the substrate. This substrate is heated at a rate of 10 ° C. to 650 ° C. in a normal incinerator.
After heating at 650 ° C. for 10 minutes, the mixture was cooled to room temperature at a temperature decreasing rate of 10 ° C./min. As a result, a metal Pt film having a thickness of about 0.4 μm was formed as a first layer on the substrate (FIG. 2A).

Step 2 On this Pt film, a resinate powder of Cr was dissolved in terpineol to have a viscosity of about 50,000 cps (C
r-MOD) was printed using a conventional screen printing method in the same manner as in Step 1. This is treated in a normal heat treatment furnace at 6
Heat to 50 ° C at a heating rate of 10 ° C / min.
After holding for 0 minutes, the mixture was cooled to room temperature at a temperature decreasing rate of 10 ° C./min. As a result, a thickness of about 0.2 mm is formed as a second layer on the Pt film.
A 4 μm metal Cr film was formed (FIG. 2B).

Step 3 Nd: YAG with Q switch similar to the configuration shown in FIG.
Using the second high-long-wave laser device, the above steps 1 and 2
The stage (131) was moved and processed while irradiating the laser at almost the center of the Pt and Cr pattern formed in the step (1). At this time, the Q switch frequency of the laser is 3 kHz, the average output is 7.5 watts, the laser beam diameter on the film surface of the substrate is about 8 μm by the aperture and the condenser lens, and the feed speed of the stage (131) is 2
0 mm / sec. As a result, the Pt film and the Cr film were simultaneously removed only in the portion irradiated with the laser (FIG. 2).
(C)).

Step 4 Dry etching was performed with CF ₄ + O ₂ to remove only Cr (FIG. 2D). This is due to the difference in the etching rate between Pt and Cr. As a result of the dry etching, a device electrode made of Pt was formed in which the distance (L) between the pair of device electrodes was about 8 μm and the length (W1) of the device electrode was about 100 μm.

By the above method, the bulge of the processed end is reduced as compared with the laser irradiation without forming the Cr film, and the scattered Pt-MOD scattered during the laser irradiation is reduced. It could also be prevented from adhering.

Next, a method of manufacturing a surface conduction electron-emitting device and an electron source substrate using the device electrodes manufactured by the above method will be described.

As shown in FIG. 11, a common wiring (111) was formed on a substrate provided with the device electrodes manufactured by the above method by ordinary vacuum film formation, photolithography and etching.

Next, a substrate provided with the device electrodes (FIG. 5)
(A)), a conductive thin film (3) was formed as follows (FIG. 5 (b)). A suitable amount of a butyl acetate solution of about 1% by weight of a palladium acetate-bis-di-propylamine complex in terms of palladium was dropped on the substrate provided with the above-mentioned device electrode, and then immediately rotated at 1000 rpm to apply.
Thereafter, a heat treatment was performed at 300 ° C. for 10 minutes in the air. After repeating the application and the heat treatment three times, patterning is performed by a normal photolithography etching method.
A conductive thin film (3) made of PdO was formed.

Subsequently, an energization process called a forming process was performed. At this time, a voltage as shown in FIG. 6A is applied between the device electrodes in a vacuum atmosphere, and the pulse width (T
1) was performed at a peak value of 15 V using a square wave having a pulse interval (T2) of 10 milliseconds and a millisecond of 1 millisecond. By this energization treatment, the conductive thin film (3) was locally destroyed, deformed and deteriorated to form an electron emitting portion (4) (FIG. 5 (c)).

As described above, the face plate (86), the grid electrode (121), and the support frame (87) were prepared using the electron source substrate (FIG. 11) provided with the surface conduction electron-emitting device manufactured as described above. ) And a rear plate (82) to form an envelope (88), seal it to produce a display panel (FIG. 12), and further perform television display based on NTSC television signals. An image forming apparatus having a drive circuit as shown in FIG. 10 was manufactured.

The surface conduction electron-emitting device, the electron source substrate, the display panel, and the image forming apparatus of the present embodiment each use the respective manufacturing techniques of the conventional manufacturing methods of vacuum film formation, photolithography, and etching. The same electron emission characteristics and image display characteristics as those manufactured by the method described above.
This is because the swelling of the processed end of the device electrode is reduced, and no scattered metal is adhered to the surface of the device electrode during processing. In addition, by manufacturing the device electrodes by the laser processing method, there is no increase in cost due to an increase in the size or the number of devices such as a vacuum film forming device, a photolithography device, a mask aligner, and an etching device accompanying a large screen.
The manufacturing method has also been simplified.

[0102]

As is apparent from the above description, according to the present invention, during laser irradiation, since the second layer is buffered, the raised portion of the processed end of the first layer serving as an element electrode is reduced. Since the two layers protect the surface of the first layer, scattered metal does not adhere to the surface of the first layer serving as an element electrode. As a result, a surface conduction electron-emitting device that gives a good image can be obtained. In addition, since the device electrode is formed using a laser processing method, the device electrode can be easily and accurately formed into a desired shape, and a large number of surface conduction electron-emitting devices for a large screen can be manufactured at low cost.

The surface conduction electron-emitting device manufactured by the above-described method and the electron source substrate, display panel, and image forming apparatus provided with the electron-emitting device are uniform and excellent over the entire image area even on a large screen. And can be produced at low cost.

[Brief description of the drawings]

FIG. 1A is a schematic plan view showing a basic configuration of a surface conduction electron-emitting device manufactured by a method of the present invention. (B) It is the sectional view on the AA line of FIG.1 (a).

FIG. 2 is an explanatory view showing a method for manufacturing an element electrode according to the present invention.

FIG. 3 is an explanatory view showing one example of a laser processing apparatus used in the manufacturing method of the present invention.

FIG. 4 is an explanatory view showing one example of a laser processing apparatus used in the manufacturing method of the present invention.

FIG. 5 is an explanatory view showing one example of a method for manufacturing a surface conduction electron-emitting device of the present invention.

FIG. 6 is an explanatory diagram showing one example of a voltage waveform of energization forming in the manufacturing method of the present invention.

FIG. 7 is a schematic configuration diagram of an electron source substrate having a matrix arrangement according to the present invention.

FIG. 8 is an explanatory diagram showing a basic configuration of a display panel of the present invention including an electron source substrate having a matrix arrangement.

FIG. 9 is a plan view of a fluorescent film used for the display panel of the present invention.

FIG. 10 is a block diagram showing a schematic configuration of a drive circuit of the image forming apparatus of the present invention for performing television display based on an NTSC television signal.

FIG. 11 is a schematic configuration diagram of a ladder-type arrangement of the electron source substrate of the present invention.

FIG. 12 is an explanatory diagram showing a basic configuration of a display panel of the present invention including a ladder-type arrangement of electron source substrates.

FIG. 13 is an explanatory view (plan view) showing a conventional surface conduction electron-emitting device.

FIG. 14 is an explanatory view showing a conventional surface conduction electron-emitting device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Substrate 2 Element electrode 3 Conductive thin film 4 Electron emission part 21 1st layer 22 2nd layer 31 Laser oscillator 32 Laser beam 33 Mirror 34 Aperture 35 Lens 36 Stage 41 Mask 71 X-axis wiring 72 Y-axis wiring 73 Surface Conduction-type electron-emitting device 74 Connection 81 Electron source substrate 82 Rear plate 83 Glass substrate 84 Phosphor film 85 Metal back 86 Face plate 87 Support frame 88 Envelope 91 Black conductive material 92 Phosphor 101 Display panel 102 Scanning circuit 103 Control circuit 104 Shift register 105 line memory 106 synchronization signal separation circuit 107 modulation signal generator 111 common wiring 121 grid electrode 122 opening

Continuation of the front page (58) Field surveyed (Int.Cl. ⁷ , DB name) H01J 9/02 H05K 3/00-3/08

Claims (11)

(57) [Claims] At least one pair of device electrodes, a conductive thin film formed between the device electrodes over the pair of device electrodes, and an electron-emitting portion formed on a part of the conductive thin film are formed on a substrate. (Step 1) a first step of forming a first layer as an electrode member for the device electrode on a substrate, and (Step 2) a material different from the first layer. A second step of laminating a second layer of a resist having a transmittance of 80% or more in a wavelength band of a laser used in a third step described later on the first layer,
(Step 3) A third step of irradiating the laser, removing the first layer and the second layer in the portion irradiated with the laser from the substrate surface, and processing the element electrode into a desired shape, (Step 4)
A method for manufacturing a surface conduction electron-emitting device, wherein the pair of device electrodes is formed by a manufacturing method including a fourth step of removing only a layer. 2. At least one pair of device electrodes, a conductive thin film formed between the device electrodes over the pair of device electrodes, and an electron-emitting portion formed on a part of the conductive thin film are formed on a substrate. (Step 1) a first step of forming a first layer as an electrode member for the device electrode on a substrate, and (Step 2) a material different from the first layer. A second step in which a second layer made of a metal having an etching rate higher than that of the first layer in the fourth step described below is formed by laminating the second layer on the first layer; A third step of removing the irradiated portions of the first layer and the second layer from the substrate surface to process the device electrode into a desired shape, and (step 4) a fourth step of removing only the second layer by etching. Forming the above-mentioned pair of device electrodes by a manufacturing method A method of manufacturing a surface conduction electron-emitting device. 3. The etching in the fourth step is performed by wet etching, and an etching rate ratio between the second layer and the first layer (second layer / first layer) is 10 or more. Item 3. A method for producing a surface conduction electron-emitting device according to Item 2. 4. The surface conduction according to claim 1, wherein the first layer and / or the second layer is formed by a method selected from a vacuum forming method, a coating method, and a printing method. Manufacturing method of an electron-emitting device. 5. A method for manufacturing an electron source having a surface conduction electron-emitting device, wherein the surface conduction electron-emitting device is performed by the method according to claim 1. Description: Method of manufacturing an electron source. 6. The method according to claim 5, wherein a plurality of the electron-emitting devices are arranged on the same substrate. 7. A plurality of X-direction wirings formed on the substrate, and a plurality of Y-directions formed in a substantially vertical direction electrically insulated from the plurality of X-direction wirings. And one of the pair of device electrodes is electrically connected to the X-direction wire, and the other device electrode is electrically connected to the Y-direction wire. Item 7. The method for manufacturing an electron source according to Item 6. 8. A plurality of electron-emitting devices are arranged between two adjacent wires of a plurality of wires arranged on the substrate in substantially the same direction, and one of the pair of device electrodes is adjacent to two adjacent wires.
7. The method for manufacturing an electron source according to claim 6, wherein one of the two wirings is connected, and the other element electrode is connected to the remaining one of the two adjacent wirings. 9. A method for manufacturing an image forming apparatus comprising an envelope having an electron source and a substrate on which an image forming member on which an image is formed by electrons emitted from the electron source is provided. A method for manufacturing an image forming apparatus, wherein the manufacturing of the electron source is performed by the manufacturing method according to claim 6. 10. An external device comprising: an electron source; a control electrode for controlling electrons emitted from the electron source; and a substrate on which an image forming member on which an image is formed by the electrons controlled by the control electrode is formed. A method for manufacturing an image forming apparatus including an enclosure, wherein the manufacturing of the electron source is performed by the manufacturing method according to claim 8. 11. The image according to claim 9, wherein the image forming apparatus is for a television broadcast, for a video conference system, for a computer, or for an optical printer using a photosensitive drum. Manufacturing method of forming apparatus.