JPH08248276A - Structure for coupling optical fiber and organic element - Google Patents

Abstract

PURPOSE: To make it possible to easily produce a structure for coupling even an optical fiber having a small sectional area and an EL element by disposing the respective transparent electrodes of the org. EL element opposite to the section of the optical fiber in an axial direction or at a specified angle with the axial direction. CONSTITUTION: The coating layer 1c at the terminal of the optical fiber 1 of the structure for coupling the optical fiber and the org. EL element for introducing the light emitted from the org. EL element 2 into the optical fiber 1 is partly peeled and the terminal is cut nearly to the central axis of the core la through the clad 1b, by which the section of the axial direction is formed. The respective transparent electrodes 2a of the org. EL element 2 are respectively disposed to face this section. An org. material layer 2b including a light emitting layer and metal electrode 2c are successively deposited by evaporation on these transparent electrodes 2a, by which the org. EL element 2 is formed. Further, the electrode wires are taken out of the transparent electrodes 2a and the metallic electrode 2c, by which the structure for coupling the optical fiber 1 and the org. EL element 2 is obtd. This coupling structure is preferably coated and sealed with a glass cap.

Description

Detailed Description of the Invention

[0001]

The present invention relates to an optical fiber and an organic E
The present invention relates to a coupling structure with an L element. More specifically, optical fibers and organic EL that are suitable for optical fiber communication.
The present invention relates to a coupling structure with an element.

[0002]

2. Description of the Related Art A semiconductor laser or a light emitting diode (hereinafter referred to as an LED) has been used as a light source for an optical fiber used for conventional optical fiber communication and the like. In order to guide the light emitted from these light sources into the optical fiber,
For example, in the case of a surface emitting LED, (a) lens coupling method,
Either (b) the direct coupling method or (c) the front spherical fiber method was used. In either case, it was necessary to collect the emitted light using a lens and introduce it into the optical fiber, or to adjust and fix the LED at a fixed position of the optical fiber. Further, when the light from the optical fiber light source is introduced into the optical fiber, it is necessary to align the optical fiber, and the position of the optical fiber is displaced due to a change in the external environment, and the incident light amount varies. From such a point of view, an EL light emitting element is used as a light source for an optical fiber, and a coupling structure between the optical fiber and the light source in which the EL light emitting element is formed on the end face of the optical fiber is disclosed (Japanese Patent Laid-Open No. 3-94209).
Issue).

[0003]

However, since the EL light emitting element has to be formed in a cross section perpendicular to the axial direction of the optical fiber, the actual fabrication work is difficult, and the light emitting element is not provided for each optical fiber. It needed to be formed, and required extremely troublesome work. In particular, when the cross-sectional area of the optical fiber is small, it has been difficult to manufacture the optical fiber.

The present invention has been made in view of the above problems, and an object of the present invention is to provide a coupling structure between an optical fiber and an organic EL element, which is easy to manufacture even if the cross-sectional area of the optical fiber is small. And

[0005]

In order to achieve the above object, according to the present invention, one or more optical fibers are provided in a coupling structure of an optical fiber and an organic EL element for introducing light emitted from the organic EL element into the optical fiber. However, each of the transparent electrodes of the one or more organic EL elements has a cross section having an axial direction or a cross section having a constant angle with the axial direction, and is disposed so as to face the cross section. A coupling structure between an optical fiber and an organic EL element is provided.

As a preferred embodiment, there is provided a coupling structure between an optical fiber and an organic EL element, wherein the one or more optical fibers are formed by connecting the optical fibers in a flat cable shape.

Further, there is provided a coupling structure between an optical fiber and an organic EL element, wherein the cross section of the optical fiber includes a core portion.

Further, there is provided a coupling structure between an optical fiber and an organic EL element, wherein the angle between the cross section of the optical fiber and the axial direction is 60 degrees or less.

Further, the coupling structure of the optical fiber and the organic EL element is characterized by being further covered and sealed with a glass cap, and the optical fiber and the organic E element.
A coupling structure with an L element is provided.

The coupling structure between the optical fiber of the present invention and the organic EL element will be specifically described below. 1. Optical Fiber The optical fiber used in the present invention is not particularly limited and, for example, according to function, a non-dispersion shift fiber,
Dispersion shift fibers, dispersion flat fibers, polarization control fibers can be mentioned, and, depending on the material, multi-component glass such as silica fiber, metal halide fiber, chalcogenite glass fiber, fluoride glass fiber, etc. Examples thereof include fibers and plastic fibers such as polyethylene-polymethylmethacrylate type and polymethylmethacrylate-vinylidene fluoride polymer type.

(1) Coating Layer Further, examples of the coating layer of the optical fiber include nylon, urethane, ETFE (Teflon), amorphous carbon, silicon nitride, TiC, polyethylene and the like.

(2) Cladding As the cladding of the optical fiber, for example, silicon, fluorosilicone, silicon resin, etc. can be mentioned.

(3) Core Further, as the core of the optical fiber, for example, pure quartz, GeO ₂ -doped quartz, polymethylmethacrylate, etc. can be mentioned.

(4) Formation of Cross Section In the present invention, a cross section is formed in the axial direction of the optical fiber or at a constant angle with the axial direction. The formation of this cross section can be achieved, for example, by removing the coating layer of the optical fiber,
Alternatively, after polishing with a file or the like as it is, it is polished with a precision film polishing agent so as to increase the smoothness. Further, the angle may be 60 degrees or less with the axial direction although it has a correlation with the diameter of the optical fiber. If it exceeds 60 degrees, the cross-sectional area becomes small, and it becomes difficult to manufacture the device and attach the electrodes.

2. Organic EL Element The organic EL element used in the present invention may emit any color from near ultraviolet rays to red,
Here, light emission from near ultraviolet rays to green is described as an example. In order to obtain this light emission, for example, the following structures can be mentioned. Basically, a structure in which a light emitting layer of an organic material layer is sandwiched between two electrodes (a transparent anode (anode) and an electrode (cathode)) may be provided with another layer if necessary. Specifically, (1) transparent electrode (anode) / light emitting layer / electrode (cathode) (2) transparent electrode (anode) / hole injection layer / light emitting layer / electrode (cathode) (3) transparent electrode (anode) / Light emitting layer / electron injection layer / electrode (cathode) (4) Transparent electrode (anode) / hole injection layer / light emitting layer / electron injection layer / electrode (cathode).

Transparent electrode (anode) The material of the anode has a large work function (4 ev or more).
Metals, alloys, electrically conductive compounds or mixtures thereof are preferably used. As a specific example, a metal such as Au,
Conductive transparent materials such as CuI, ITO, SnO ₂ and ZnO can be used. The anode is an organic EL that forms a thin film of the above material on a desired substrate by a method such as vapor deposition or sputtering.
In a light emitting device using an element as a light emitting body, for example, an electrode pattern line perpendicular to a pattern line of a transparent electrode (anode) is formed. In the present invention, since the transparent electrode is formed on the organic material layer such as the light emitting layer, the organic material layer is greatly deteriorated and is not stable in the photolithography method in which wet etching is performed. Therefore, a pattern of a transparent electrode (anode) is formed through a mask having a desired shape during vapor deposition or sputtering of the above materials. When the light emitted from the light emitting layer is taken out from the anode as described above, it is desirable that the transmittance of the anode is higher than 10%. The sheet resistance of the anode is preferably several hundred Ω / □ or less. The thickness of the anode depends on the material, but is usually 10 nm to 1
μm, preferably in the range of 10 to 200 nm.

Light-Emitting Layer The light-emitting material of the organic EL device is mainly an organic compound, and specifically, the following compounds can be mentioned depending on the desired color tone. First, in the case of obtaining violet light emission from the ultraviolet region, compounds represented by the following general formula can be mentioned.

[0018]

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In this general formula, X represents the following compound.

[0020]

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Here, n is 2, 3, 4 or 5.
In addition, Y represents the following compound.

[0022]

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Phenyl group, phenylene group of the above compound,
Naphthyl group, alkyl group having 1 to 4 carbon atoms, alkoxy group, hydroxyl group, sulfonyl group, carbonyl group, amino group,
A dimethylamino group, a diphenylamino group, or the like may be substituted alone or in plural. Also, these may be bonded to each other to form a saturated 5-membered ring or 6-membered ring. Further, those having a phenyl group, a phenylene group, or a naphthyl group bonded at the para position are preferable for forming a smooth vapor-deposited film having good bonding properties. Specifically, they are the following compounds. In particular,
A p-quaterphenyl derivative and a p-quinquephenyl derivative are preferable.

[0024]

[Chemical 4]

[0025]

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[0026]

[Chemical 6]

[0027]

[Chemical 7]

Next, in order to obtain blue to green luminescence, for example, benzothiazole-based, benzimidazole-based, benzoxazole-based optical brighteners, metal chelated oxinoid compounds, and styrylbenzene-based compounds are listed. You can Examples thereof include benzothiazole-based, benzimidazole-based, and benzoxazole-based optical brighteners and styrylbenzene-based compounds.

Specific examples of the compound name include those disclosed in JP-A-59-194393. Typical examples thereof include 2,5-bis (5,7-di-t-pentyl-2-benzoxazolyl) -1,3,4-thiadiazole and 4,4′-bis (5,7-t- Pentyl-2-benzoxazolyl) stilbene, 4,4′-bis [5,7-di- (2-methyl-2-butyl) -2-benzoxazolyl] stilbene, 2,5-bis (5 , 7-Di-t-pentyl-2-benzoxazolyl) thiophene, 2,5-bis [5-
α, α-Dimethylbenzyl-2-benzoxazolyl]
Thiophene, 2,5-bis [5,7-di- (2-methyl-2-butyl) -2-benzoxazolyl] -3,4 diphenylthiophene, 2,5-bis (5-methyl-2)
-Benzoxazolyl) thiophene, 4,4'-bis (2-benzoxazolyl) biphenyl, 5-methyl-
2- [2- [4- (5-methyl-2-benzoxazolyl) phenyl] vinyl] benzoxazole, 2- [2
-(4-Chlorophenyl) vinyl] naphtho [1,2-
d] Benzoxazoles such as oxazole, 2-2 ′
Benzothiazoles such as-(p-phenylenedivinylene) -bisbenzothiazole, 2- [2- [4- (2-benzimidazolyl) phenyl] vinyl] benzimidazole, 2- [2- (4-carboxyphenyl) vinyl ]
Fluorescent brighteners such as benzimidazole series such as benzimidazole can be mentioned. In addition, other useful compounds are Chemistry of Synthetic Soybean 1
971, 628-637 and 640.

As the chelated oxinoid compound, for example, those disclosed in JP-A-63-295695 can be used. Typical examples thereof are tris (8-quinolinol) aluminum, bis (8-quinolinol) magnesium, bis (benzo [f] -8-quinolinol) zinc, bis (2-methyl-).
8-quinolinolate) aluminum oxide, tris (8-quinolinol) indium, tris (5-methyl-8-quinolinol) aluminum, 8-quinolinol lithium, tris (5-chloro-8-quinolinol) gallium, bis (5- Chloro-8-quinolinol) calcium, poly [zinc (II) -bis (8-hydroxy-5-)
8-hydroxyquinoline-based metal complex such as quinolinonyl) methane] and dilithium epinetridione.

As the styrylbenzene compound, for example, those disclosed in European Patent No. 0319881 and European Patent No. 0373582 can be used. As typical examples thereof, 1,4-bis (2-methylstyryl) benzene and 1,4-bis (3
-Methylstyryl) benzene, 1,4-bis (4-methylstyryl) benzene, distyrylbenzene, 1,4-
Bis (2-ethylstyryl) benzene, 1,4-bis (3-ethylstyryl) benzene, 1,4-bis (2-
Methylstyryl) -2-methylbenzene, 1,4-bis (2-methylstyryl) -2-ethylbenzene and the like can be mentioned.

The distyrylpyrazine derivative disclosed in JP-A-2-252793 can also be used as a material for the light emitting layer. Typical examples are 2,
5-bis (4-methylstyryl) pyrazine, 2,5-bis (4-ethylstyryl) pyrazine, 2,5-bis [2
-(1-naphthyl)) vinyl] pyrazine, 2,5-bis (4-methoxystyryl) pyrazine, 2,5-bis [2
Examples thereof include-(4-biphenyl) vinyl] pyrazine and 2,5-bis [2- (1-pyrenyl) vinyl] pyrazine. Others, such as European Patent No. 0
The polyphenyl compound disclosed in the specification of 387715 can also be used as a material for the light emitting layer.

In addition to the above-mentioned optical brightener, metal chelated oxinoid compound, styrylbenzene compound, etc., for example, 12-phthaloperinone (J. Appl.
Phys., 27, L713 (1988)), 1, 4
-Diphenyl-1,3-butadiene, 1,1,4,4-
Tetraphenyl-1,3 butadiene (above Appl. Phys.
Lett., Vol. 56, L799 (1990)), naphthalimide derivative (JP-A-2-305886), perylene derivative (JP-A-2-189890), oxadiazole derivative (JP-A-2-216791). Publication, or oxadiazole derivatives disclosed by Hamada et al. At the 38th Applied Physics Association Lecture), aldazine derivatives (JP-A-2-220393), pyrazirine derivatives (JP-A-2-220394), Cyclopentadiene derivative (JP-A-2-289675), pyrrolopyrrole derivative (JP-A-2-296891),
Styrylamine derivatives (Appl. Phys. Lett., Volume 56,
L799 (1990)), coumarin-based compounds (Japanese Patent Laid-Open No. 2-191694), International Publication WO90 / 1.
3148 and Appl. Phys. Lett., Vol 58, 18, P1982 (1991)
The polymer compounds and the like as described in 1) can also be used as the material of the light emitting layer.

In the present invention, an aromatic dimethylidyne compound (European Patent No. 0388876) is used as a material for the light emitting layer.
No. 8 and those disclosed in JP-A-3-231970) are preferably used. As a specific example, 1,4
-Phenylenedimethyridin, 4,4-Phenylenedimethylidene, 2,5-Xylylenedimethylidene, 2,6
-Naphthylene dimethylidene, 1,4-biphenylene dimethylidene, 1,4-p-terephenylene dimethylidene, 9,10-anthracene diyl dimethylidene, 4,4'-bis (2,2- Di-t-butylphenylvinyl) biphenyl, (hereinafter abbreviated as DTBPBBi), 4,4′-bis (2,2-diphenylvinyl) biphenyl (hereinafter abbreviated as DPVBi), and the like, and derivatives thereof. You can

Further, the general formula (R ₂ -Q) ₃ -AL-OL described in JP-A-5-258862 is disclosed.
The compounds represented by are also included. (In the above formula, L is a hydrocarbon having 6 to 24 carbon atoms in which the phenyl moiety is unlucky, O-L is a phenylate ligand, Q is a substituted 8-quinolinolate ligand, and R _{2 is} Represents an 8-quinolinolato ring substituent selected to sterically hinder the attachment of two substituted 8-quinolinolato ligands to the aluminum atom. Specifically, bis (2-methyl-8) -Quinolinolato)
(Para-phenylphenolato) aluminum (III)
(Hereinafter PC-7), bis (2-methyl-8-quinolinolate) (1-naphtholate) aluminum (III) (hereinafter PC-17) and the like. In addition, JP-A-6-9
There is a method of obtaining highly efficient mixed emission of blue and green using doping according to Japanese Patent Publication No. 953. in this case,
Examples of the host include the light-emitting material described above, and examples of the dopant include strong fluorescent dyes from blue to green, such as coumarin-based dyes or fluorescent dyes similar to those used as the host described above. Specifically, as the host, a light emitting material having a distyrylarylene skeleton, particularly preferably DPVBi, and as a dopant, diphenylaminovinylarylene, particularly preferably, for example, N, N-diphenylaminovinylbenzene (D
PAVB) can be mentioned. Further, red light can be emitted by using a red dopant. As a method of forming a light emitting layer using the above-mentioned material, a known method such as a vapor deposition method, a spin coating method, and an LB method can be applied. The light emitting layer is preferably a molecular deposition film. Here, the molecular deposition film refers to a thin film formed by depositing a material compound in a vapor phase state or a film formed by solidifying a material compound in a solution state or a liquid phase state, and usually this molecular deposition film. Is different from the thin film (molecular cumulative film) formed by the LB method in the aggregation structure and the higher order structure,
It can be classified by the functional difference caused by it. Further, as disclosed in JP-A-57-51781, a binder and a material compound such as a resin are dissolved in a solvent to form a solution, which is then thinned by a spin coating method or the like. Also, a light emitting layer can be formed. The thickness of the light emitting layer thus formed is not particularly limited and can be appropriately selected depending on the situation. Usually, the range of 5 nm to 5 μm is preferable. Organic E
The light emitting layer of the L element also has the following functions. That is, an injection function; a function capable of injecting holes from an anode or a hole injection layer when an electric field is applied, and a function capable of injecting electrons from a cathode or an electron injection layer; a transport function;
It has a function of moving injected charges (electrons and holes) by the force of electrolysis, a light emitting function; a function of providing a field for recombination of electrons and holes and connecting this to light emission. However, the easiness of injecting holes and the easiness of injecting electrons may be different, and the transport capacity represented by the mobility of holes and electrons may be large or small. It is preferable to move.

Hole Injecting Layer As a material of the hole injecting layer provided as necessary, those conventionally used as a hole injecting material of a photoconductive material and a hole injecting layer of an organic EL element are used. Any known one can be selected and used. The material of the hole injection layer has either hole injection or electron barrier properties, and may be either an organic substance or an inorganic substance.

Specific examples include, for example, triazole derivatives (see US Pat. No. 3,112,197), oxadiazole derivatives (see US Pat. No. 3,189,447), and imidazole derivatives (Japanese Patent Publication No. Sho. 37-1
No. 6096, etc.), polyarylalkane derivatives (US Pat. Nos. 3,615,402 and 3,82).
No. 0,989, No. 3,542,544, Japanese Patent Publication No. 45-555, No. 51-10983, JP-A No. 51-93224, 55-171.
No. 05, No. 56-4148, No. 55-108.
No. 667, No. 55-156953, No. 56-
36656, etc.), pyrazoline derivatives and pyrazolone derivatives (US Pat. Nos. 3,180,729, 4,278,746 and JP-A-55-8).
No. 8064, No. 55-88065, No. 49-
No. 105537, No. 55-51086, No. 5
6-80051, 56-88141, 57-45545, 54-112637, 55-74546, etc.), phenylenediamine derivatives (US Pat. No. 3,615,404). Description, Japanese Patent Publication No. 51-10105, 46-3712
Japanese Patent Publication No. 47-25336, Japanese Patent Laid-Open No. 54-53.
No. 435, No. 54-110536, No. 54-
119925), arylamine derivatives (U.S. Pat. No. 3,567,450, U.S. Pat. No. 3,1).
No. 80,703, No. 3,240,597, No. 3,658,520, No. 4,23.
2,103, 4,175,961, 4,012,376, and JP-B-49-3.
5702, 39-27577, and JP-A-5
No. 5-144250, No. 56-119132, No. 56-22437, West German Patent No. 1,11.
0518, etc.), amino-substituted chalcone derivatives (see US Pat. No. 3,526,501, etc.),
Oxazole derivatives (disclosed in US Pat. No. 3,257,203, etc.), styrylanthracene derivatives (see JP-A-56-46234, etc.), fluorenone derivatives (see JP-A-54-110837, etc.) ),
Hydrazone derivatives (U.S. Pat. No. 3,717,462, JP-A-54-59143, JP-A-55-520)
63, 55-52064, 55-46.
No. 760, No. 55-85495, No. 57-1.
No. 1350, No. 57-148749, No. 2-311591, etc.), Stilbene derivatives (No. 61-210363, No. 61-2284).
No. 51, No. 61-14642, No. 61-72.
No. 255, No. 62-47646, No. 62-3.
6674, 62-10652, and 62-
No. 30255, No. 60-93445, No. 60
-94462, 60-174749, 60-175052, etc.), silazane derivatives (U.S. Pat. No. 4,950,950), polysilanes (JP-A-2-204996), Aniline-based copolymer (JP-A-2-28263), JP-A-1-
Examples thereof include conductive polymer oligomers (particularly thiophene oligomers) disclosed in Japanese Patent Publication No. 211399.

As the material for the hole injecting layer, the above-mentioned materials can be used.
No. 3,295,965), aromatic tertiary amine compounds and styrylamine compounds (US Pat. No. 4,127,412, JP-A-53-270).
No. 33, No. 54-58445, No. 54-14
No. 9634, No. 54-64299, No. 55-
79450, 55-144250, and 5
6-119132, 61-295558, 61-98353, 63-295695.
It is preferable to use aromatic tertiary amine compounds.

Typical examples of the porphyrin compound include porphine, 1,10,15,20-tetraphenyl-21H, 23H-porphine copper (II), 1,10,
15,20-Tetraphenyl-21H, 23H-porphine zinc (II), 5,10,15,20-tetrakis (pentafluorophenyl) -21H, 23H-porphine, silicon phthalocyanine oxide, aluminum phthalocyanine chloride, phthalocyanine (metal-free ),
Examples thereof include dilithium phthalocyanine, copper tetramethylphthalocyanine, copper phthalocyanine, chromium phthalocyanine, zinc phthalocyanine, lead phthalocyanine, titanium phthalocyanine oxide, Mg phthalocyanine and copper octamethylphthalocyanine.

Typical examples of the aromatic tertiary amine compound and the styrylamine compound are N, N,
N ', N'-tetraphenyl-4,4'-diaminophenyl, N, N'-diphenyl-N, N'-bis- (3-
Methylphenyl)-[1,1'-biphenyl] -4,
4'-diamine, 2,2-bis (4-di-p-tolylaminophenyl) propane, 1,1-bis (4-di-p-
Tolylaminophenyl) cyclohexane, N, N,
N ', N'-tetra-p-tolyl-4,4'-diaminophenyl, 1,1-bis (4-di-p-tolylaminophenyl) -4-phenylcyclohexane, bis (4-dimethylamino-2) -Methylphenyl) phenylmethane,
Bis (4-di-p-tolylaminophenyl) phenylmethane, N, N'-diphenyl-N, N'-di (4-methoxyphenyl) -4,4'-diaminobiphenyl, N,
N, N ', N'-tetraphenyl-4,4'-diaminophenyl ether, 4,4'-bis (diphenylamino) quadriphenyl, N, N, N-tri (p-tolyl) amine, 4- (Di-p-tolylamino) -4'-
[4 (di-p-tolylamino) styryl] stilbene,
4-N, N-diphenylamino- (2-diphenylvinyl) benzene, 3-methoxy-4'-N, N-diphenylaminostilbenzene, N-phenylcarbazole and the like can be mentioned. In addition, the above-mentioned aromatic dimethylidyne compound p-type-Si, p shown as the material of the light emitting layer is used.
Inorganic compounds such as type SiC can also be used as the material of the hole injection layer. The hole injection layer contains the above compound,
For example, vacuum deposition method, spin coating method, casting method, LB
It can be formed by thinning the film by a known method such as a method. The thickness of the hole injection layer is not particularly limited, but is usually 5 nm to 5 μm. The hole injection layer may have a single-layer structure made of one kind or two or more kinds of the above-mentioned materials, or a plural structure made of plural layers having the same composition or different compositions.

Electron Injection Layer The electron injection layer, which is provided if necessary, may have a function of transmitting the electrons injected from the cathode to the light emitting layer,
As the material, any one of conventionally known compounds can be selected and used. Specific examples include nitro-substituted fluorene derivatives, JP-A-57-149259, JP-A-58-55450, and JP-A-63-10406.
Anthraquinodimethane derivatives disclosed in Japanese Patent Publication No. 1, etc., Polymer Preprints, Japan Vol.37. No.3 (1988) p.
681, etc., diphenylquinone derivatives, thiopyran dioxide derivatives, heterocyclic tetracarboxylic acid anhydrides such as naphthaleneperylene, carbodiimides, Japanese
Journal of Applied Physics, 27, L269 (1988), JP-A-60-696657, JP-A-61-143764, JP-A-61-148159, and the like, and the fluorenylidenemethane derivative disclosed in JP-A-61-148159. -22515
1, anthraquinodimethane and anthrone derivatives disclosed in JP-A No. 61-233750 and Ap,
Pl. Phys. Lett., 55, 15. 1489 and the oxadiazole derivatives disclosed by Hamada et al. in the 38th Federation of Applied Physics, and the series disclosed in JP-A-59-194393. The electron-transporting compound of In the method of JP-A-59-194393, the electron-transporting compound is disclosed as a material for the light-emitting layer, but according to the study of the present inventor, it is clear that it can also be used as a material for the electron-injecting layer. Became. Moreover, the thiazole derivative substituted with the oxygen atom and the sulfur atom of the oxadiazole ring and the quinoxaline derivative having a quinoxaline ring known as an electron-withdrawing group can be mentioned.
Further, a metal complex of an 8-quinolinol derivative, specifically, tris (8-quinolinol) aluminum (hereinafter referred to as A
abbreviated as 1q), tris (5,7-dibromo-8-quinolinol) aluminum, tris (2-methyl-8-quinolinol) aluminum, tris (5-methyl-8-quinolinol) aluminum, bis (8-quinolinol).
Zinc (hereinafter abbreviated as Znq), the central metal of these metal complexes is In, Mg, Cu, Ca, Sn, Ga or Pb.
The metal complex substituted for can also be used as a material for the electron injection layer. In addition, metal-free or metal phthalocyanine, or their ends are alkyl groups,
Those substituted with a sulfonic acid group or the like are also preferable. Further, the distyrylpyrazine derivative exemplified as the material of the light emitting layer can also be used as the electron injection material. Further, similarly to the hole injection layer, an inorganic semiconductor such as n-type-Si or n-type-SiC can be used. The electron injection layer is formed by using the above compound, for example, a vacuum vapor deposition method, a spin coating method,
It can be formed by forming a thin film by a known method such as a casting method or an LB method. The thickness of the electron injection layer is not particularly limited, but is usually 5 nm to 5 μm. The electron injection layer may have a single-layer structure composed of one or more of the above-mentioned materials, or may have a plurality of structures composed of a plurality of layers having the same composition or different compositions.

Electrode (Cathode) As the cathode, those having a low work function (4 ev or less) metal (referred to as an electron injecting metal), an alloy electrically conductive compound and a mixture thereof as an electrode substance are used. Specific examples of such an electrode material include sodium, sodium-potassium alloy, magnesium, lithium, magnesium / copper mixture, magnesium / silver mixture, magnesium / aluminum mixture, magnesium / indium mixture, aluminum / aluminum oxide (Al ₂ O 3). ₃ ), indium, lithium / aluminum,
Examples include rare earth metals. Preferably, considering the electron injection property and durability against oxidation etc. as an electrode,
An example is a mixture of an electron-injecting metal and a second metal, which is a metal having a large work function and a stable value. For example, magnesium / silver mixture, magnesium / aluminum mixture, magnesium / indium mixture, aluminum / aluminum oxide (Al ₂ O ₃ ), lithium / aluminum and the like can be mentioned. In this cathode, a thin film of the above material is formed on the supporting substrate by a method such as vapor deposition or sputtering of these electrode substances and patterned into a desired shape by a photolithography method to form a cathode pattern. If the pattern accuracy does not matter (100 μm line or more), a negative (electrode) pattern can be formed through a mask having a desired shape during vapor deposition or sputtering of the above material. Here, the sheet resistance as the negative electrode is preferably several hundred Ω / □ or less, and the film thickness is usually 10 nm to 1 μm, preferably 50 to 200 n.
It is selected in the range of m.

Organic Material Layer In the present invention, the organic material layer means an organic material layer including a light emitting layer sandwiched between a transparent electrode (anode) and an electrode (cathode).

Preparation of Organic EL Element (Example) By forming an electrode, a light emitting layer, a transparent electrode, a hole injecting layer if necessary, and an electron injecting layer as necessary by the materials and methods described above, An EL element can be manufactured. An example of producing an organic EL device having a structure in which a transparent electrode / hole injection layer / light emitting layer / electron injection layer / electrode (cathode) is sequentially provided on a supporting substrate will be described below. First,
A thin film of electrode material of 1 μm or less on a suitable substrate,
Preferably, a transparent electrode is formed by forming the film to have a film thickness in the range of 10 to 200 nm by a method such as vapor deposition or sputtering. Next, a hole injection layer is provided on this electrode. As described above, the hole injection layer is formed by the vacuum deposition method,
It can be carried out by a method such as a spin coating method, a casting method or an LB method, but it is preferably formed by a vacuum vapor deposition method from the viewpoints that a uniform film is easily obtained and pinholes are hard to occur. When the hole injection layer is formed by a vacuum deposition method, the deposition conditions vary depending on the compound used (the material of the hole injection layer), the crystal structure or recombination structure of the target hole injection layer, etc. Deposition source temperature 50 ~
450 ° C., vacuum degree 10 ⁻⁵ to 10 ⁻³ Pa, vapor deposition rate 0.0
It is preferable to appropriately select in the range of 1 to 50 nm / sec, the substrate temperature of -50 to 300 ° C., and the film thickness of 5 nm to 5 μm. Next, a light emitting layer is provided on the hole injection layer. The light emitting layer can also be formed by using a desired organic light emitting material and thinning the organic light emitting material by a method such as vacuum deposition, sputtering, spin coating, or casting.
It is preferable to form the film by the vacuum deposition method because it is easy to obtain a uniform film and pinholes are not easily generated. When the light emitting layer is formed by the vacuum vapor deposition method, the vapor deposition conditions may be selected from the same range of conditions as those for the electron injection layer, although the conditions vary depending on the compound used. Next, an electron injection layer is provided on this light emitting layer. Similar to the hole injecting layer and the light emitting layer, it is preferable to form the film by the vacuum vapor deposition method because it is necessary to obtain a uniform film. The vapor deposition conditions can be selected from the same range as the hole injection layer and the light emitting layer. Finally, an electrode (cathode) is laminated to obtain an organic EL device.

The electrode (cathode) is made of metal, and vapor deposition or sputtering can be used. However, in order to protect the underlying organic material layer from damage during film formation, the vacuum vapor deposition method is preferable. In the production of the organic EL element described so far, it is preferable to produce the transparent electrode to the electrode consistently by one evacuation. In addition, organic E
When a DC voltage is applied to the L element, light emission can be observed by applying a voltage of 3 to 40 V with the transparent electrode (anode) having a positive polarity and the electrode (cathode) having a negative polarity. Moreover, even if a voltage is applied with the opposite polarity, no current flows and no light emission occurs. When an AC voltage is applied, the anode is + and the cathode is-.
Uniform emission is observed only when the polarity becomes. The waveform of the alternating current applied may be arbitrary.

3. Glass Cap In the present invention, the glass cap is used for encapsulating the organic EL element and preventing deterioration due to oxygen, moisture and the like. The shape of the glass cap used in the present invention is not particularly limited as long as the organic EL element can be enclosed and the electrode wire can be taken out. It is preferable to simultaneously seal an inert gas such as argon or nitrogen or a liquid such as silicone oil or a fluorocarbon liquid in order to prevent deterioration of the organic EL element due to moisture or oxygen. For example, the one shown in FIG. 7B can be given. As the material, for example, alkali glass, quartz glass, organic glass or the like can be used. As a method of fixing to the optical fiber, for example, an adhesive (acrylic type, epoxy type) can be used.

[0047]

EXAMPLES The present invention will now be described in more detail by way of examples. FIG. 1 is an external view schematically showing an embodiment of a coupling structure between an optical fiber and an organic EL element of the present invention, and FIG. 2 is a schematic diagram showing a coupling structure between an optical fiber and an organic EL element shown in FIG. FIG. 3 is a side sectional view schematically showing another embodiment of the coupling structure of the optical fiber and the organic EL element of the present invention, in which the section has a constant angle with the axial direction, FIG. 4 schematically shows another embodiment of the coupling structure of the optical fiber and the organic EL element of the present invention, in which the organic EL element is formed on the outer surface of the core of the optical fiber, (A) is a front sectional view, (B) is a side sectional view thereof,
FIG. 5 is another embodiment of the coupling structure of the optical fiber and the organic EL element of the present invention, which is an external view schematically showing the one covered with a glass cap, and FIG. 6 is the optical fiber and the organic EL element shown in FIG. FIG. 7 is a side sectional view schematically showing a coupling structure with an element, and FIG. 7 is an optical fiber and an organic E shown in FIG.
FIG. 8 is a schematic explanatory view schematically showing (A) an optical fiber and (B) a glass cap used in the coupling structure with the L element, and FIG. 8 is another embodiment of the coupling structure of the optical fiber and the organic EL element of the present invention. FIG. 4 is an external view explanatory diagram schematically showing one using a flat cable-shaped optical fiber.

[Example 1] The coating layer 1c at the end of the optical fiber 1 (PCS (core 800 μm) manufactured by Asahi Glass Co., Ltd.) was partly peeled off, and it was reached by the electric file through the clad 1b to almost the center axis of the core 1a. To form an axial cross section. Next, this cut section was polished with a precision film abrasive, washed with distilled water and dried. Next, a commercially available ITO target is sputtered under the conditions of a sputtering potential of 280 V and a substrate temperature of 50 ° C. by using a commercially available sputtering device (Magnestron sputtering device manufactured by Nichiden Anelva Co., Ltd.) to form a transparent electrode 2a (ITO) having a thickness of 100 nm. Was formed on the polished surface. Next, the transparent electrode surface was placed in parallel on the substrate holder, and the organic material layer (including light emitting layer) 2b and the metal electrode 2c were vapor-deposited in this order on the transparent electrode 2a to produce an organic EL element. . Next, the electrode wire was taken out from the transparent electrode 2a and the metal electrode 2c by using a gold wire so that the two wires did not come into contact with each other, and the combined structure of the optical fiber and the organic EL element shown in FIGS. 1 and 2 was obtained. .

[Embodiment 2] The optical fiber shown in FIG. 3 was prepared in the same manner as in Embodiment 1 except that a cut section having an angle of 30 degrees with the axial direction was formed instead of the cut section in the axial direction. A bonded structure between the organic EL device and the organic EL device was obtained.

[Embodiment 3] The same as Embodiment 1 except that the cutting section is formed on the core 1a obtained by cutting the coating layer 1c and the clad 1b instead of the cutting section in the axial direction. Optical fiber and organic EL shown in Figure 4
The coupling structure with the device was obtained.

[Embodiment 4] In Embodiment 1, after taking out the electrode wire from the transparent electrode 2a and the metal electrode 2c,
Further, in a glove box under the flow of an inert gas (argon), a glass cap (brown glass tube cap) 4 having an opening at the tip shown in FIG. 7B is covered, and an adhesive 5 is applied to the coating layer 1c of the optical fiber 1. The electrode wire is taken out from the opening and the opening is fixed with the adhesive 5
The bonding structure of the optical fiber and the organic EL element shown in FIGS. 5 and 6 was obtained in the same manner as in Example 1 except that the structure was sealed with.

[Fifth Embodiment] In the first embodiment, an optical fiber connected in a flat cable shape is used instead of the optical fiber 1, and a transparent electrode 2a is used as a mask on each polished surface of the cut section to form a core. A combined structure of the optical fiber and the organic EL element shown in FIG. 8 was obtained in the same manner as in Example 1 except that the organic EL element was formed on the surface and the organic EL element was integrally formed thereon.

[0053]

As described above, according to the present invention,
Even if the cross-sectional area of the optical fiber is small, it is possible to provide a coupling structure of the optical fiber and the organic EL element, which is easy to manufacture.

[Brief description of drawings]

FIG. 1 is an external view schematically showing an example of a coupling structure of an optical fiber and an organic EL element of the present invention.

FIG. 2 is a side sectional view schematically showing a coupling structure between the optical fiber shown in FIG. 1 and an organic EL element.

FIG. 3 is a side sectional view schematically showing another example of the coupling structure of the optical fiber and the organic EL element of the present invention, the section of which has a constant angle with the axial direction.

FIG. 4 schematically shows another embodiment of the coupling structure of the optical fiber and the organic EL element of the present invention, in which the organic EL element is formed on the outer surface of the core of the optical fiber, (A) is a front sectional view, (B) is a side sectional view thereof.

FIG. 5 is an external view schematically showing another embodiment of the coupling structure of the optical fiber and the organic EL element of the present invention, which is covered with a glass cap.

6 is a side sectional view schematically showing a coupling structure between the optical fiber shown in FIG. 5 and an organic EL element.

FIG. 7 is a schematic explanatory view schematically showing (A) an optical fiber and (B) a glass cap used in the combined structure of the optical fiber and the organic EL element shown in FIG.

FIG. 8 is an external view schematically showing another embodiment of the coupling structure of the optical fiber and the organic EL element of the present invention, which uses a flat cable-shaped optical fiber.

[Explanation of symbols]

 1 Optical Fiber 1a Core 1b Quarad 1c Covering Layer 2 Organic EL Element 2a Transparent Electrode 2b Organic Material Layer (Including Light Emitting Layer) 2c Metal Electrode 3 Oscillator 4 Glass Cap 5 Adhesive 6 Inert Gas

Claims (5)

[Claims] 1. A combined structure of an optical fiber and an organic EL element for introducing light emitted from the organic EL element into the optical fiber, wherein one or more optical fibers have an axial direction or a constant angle with the axial direction. A coupling structure of an optical fiber and an organic EL element, wherein each transparent electrode of one or more organic EL elements has a cross section and is disposed so as to face the cross section. 2. The coupling structure of an optical fiber and an organic EL element according to claim 1, wherein the one or more optical fibers are optical fibers connected in a flat cable shape. 3. The coupling structure between an optical fiber and an organic EL element according to claim 1, wherein the cross section of the optical fiber includes a core portion. 4. The coupling structure between an optical fiber and an organic EL element according to claim 1, wherein the angle between the cross section of the optical fiber and the axial direction is 60 degrees or less. 5. An optical fiber and an organic material according to claim 1, wherein the optical fiber and the organic EL element according to any one of claims 1 to 4 are combined and sealed with a glass cap. Coupling structure with EL element.