JPH0824775A - Photoresist solution supply method - Google Patents

Photoresist solution supply method

Info

Publication number
JPH0824775A
JPH0824775A JP18660794A JP18660794A JPH0824775A JP H0824775 A JPH0824775 A JP H0824775A JP 18660794 A JP18660794 A JP 18660794A JP 18660794 A JP18660794 A JP 18660794A JP H0824775 A JPH0824775 A JP H0824775A
Authority
JP
Japan
Prior art keywords
photoresist solution
film
striation
surfactant
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18660794A
Other languages
Japanese (ja)
Other versions
JP3632992B2 (en
Inventor
Hideaki Hosokawa
英明 細川
Hiroichi Shiose
博一 塩瀬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Priority to JP18660794A priority Critical patent/JP3632992B2/en
Publication of JPH0824775A publication Critical patent/JPH0824775A/en
Application granted granted Critical
Publication of JP3632992B2 publication Critical patent/JP3632992B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Separation Using Semi-Permeable Membranes (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Coating Apparatus (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To improve coating property or the like by supplying the photoresist solution to a substrate after filtering with a filter composed of a polyalkene film to prevent the deterioration in removal efficiency of particles in filtration and supply of the photoresist solution. CONSTITUTION:In the supply of the photoresist solution, the photoresist solution is supplied to the substrate after filtered with the filter composed of the polyalkene film. And the polyalkene film is a polyethylene film or a polypropylene film. In this way, the deterioration in removal efficiency of the particles in the continuous filtration and supply of the photoresist solution is prevented and the improvement of photoresist coating property, the increase in production efficiency of the product of an element or the like and the decrease in the production cost are attained. Furthermore, the photoresist solution is an organic solvent composition obtained by dissolving a resin composition containing an alkali soluble resin, a quinon diazide group-containing compound and a surfactant. As a result, the coating film free from striation is constantly supplied on the substrate.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はホトレジスト溶液供給方
法に係り、さらに詳しくは、シリコンウェーハ等の基板
上へ連続的にろ過・供給を行う場合のホトレジスト溶液
の供給方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for supplying a photoresist solution, and more particularly to a method for supplying a photoresist solution when continuously filtering and supplying it onto a substrate such as a silicon wafer.

【0002】[0002]

【従来の技術】近年の電子部品の微細加工化に伴い、半
導体素子や液晶表示素子などの電子部品製造分野におい
ては、シリコンウェーハ等の基板上へホトレジスト溶液
を供給し、塗布するに際し、微小なパーティクル等を除
去したホトレジスト溶液を高効率で安定的に供給するこ
とが要求されるようになってきている。そのため、現在
では一般にホトレジスト溶液をフィルタでろ過し、微小
なパーティクル等を除去した後に基板上へ供給してい
る。
2. Description of the Related Art With the recent microfabrication of electronic parts, in the field of manufacturing electronic parts such as semiconductor elements and liquid crystal display elements, when supplying and applying a photoresist solution onto a substrate such as a silicon wafer, a minute amount of solution is applied. There is a growing demand for highly efficient and stable supply of a photoresist solution from which particles and the like have been removed. Therefore, at present, generally, the photoresist solution is filtered by a filter to remove fine particles and the like and then supplied onto the substrate.

【0003】かかるフィルタとして、安定性、耐薬品性
等の点からポリテトラフルオロエチレン膜(PTFE
膜)が従来より用いられている。しかしながらPTFE
膜では、ホトレジスト溶液のろ過・供給量が多くなるに
従い、微小パーティクルの除去効率が徐々に低下し、ろ
過後のホトレジスト溶液中に残存するパーティクル数が
増え、そのため素子等の製品品質に悪影響を及ぼすとい
う問題がある。またPTFE膜では連続的なろ過・供給
においてフィルタの目づまりを起こしやすく、1クォー
トあたりのろ過時間が次第に長くなり、結果として素子
等の製品製造効率の低下やホトレジスト塗布不良による
製品の品質低下等の問題を生ずる。このためフィルタ交
換の頻度も多くならざるを得ず、製造コストの増大をき
たす等の問題を生じている。
As such a filter, a polytetrafluoroethylene membrane (PTFE) is used in view of stability and chemical resistance.
Membrane) has been used conventionally. However PTFE
In the membrane, as the amount of filtration and supply of the photoresist solution increases, the removal efficiency of fine particles gradually decreases, and the number of particles remaining in the photoresist solution after filtration increases, which adversely affects the product quality of elements and the like. There is a problem. In addition, the PTFE membrane is liable to cause filter clogging during continuous filtration / supply, and the filtration time per quart gradually becomes longer, resulting in lower product manufacturing efficiency such as elements and product quality deterioration due to defective photoresist coating. Cause problems. For this reason, the frequency of filter replacement must be increased, which causes a problem such as an increase in manufacturing cost.

【0004】一方、近年の微細加工化に対応すべくホト
レジスト溶液も改良され、ストリエーション(塗布ム
ラ)の発生防止のためにフッ素系界面活性剤など、界面
活性剤を配合したホトレジスト溶液が多く用いられるよ
うになってきた。しかしながら、界面活性剤を含むホト
レジスト溶液をPTFE膜でろ過して連続的に基板上へ
供給する場合、とりわけフィルタ交換後しばらくの間は
PTFE膜に界面活性剤が吸着され、ろ過後のホトレジ
スト溶液中の界面活性剤配合量が低くなり、そのため基
板上への供給開始当初のホトレジスト溶液でストリエー
ションが発生しやすくなるという問題も生じている。
On the other hand, the photoresist solution has been improved in order to cope with the recent microfabrication, and a photoresist solution containing a surfactant such as a fluorine-based surfactant is often used to prevent the occurrence of striation (coating unevenness). It has become possible to be. However, when a photoresist solution containing a surfactant is filtered through a PTFE membrane and continuously supplied onto the substrate, the surfactant is adsorbed on the PTFE membrane for a while after the filter is replaced, and the photoresist solution in the filtered photoresist solution is absorbed. However, there is also a problem that striations are likely to occur in the photoresist solution at the beginning of the supply onto the substrate because of the low content of the surfactant.

【0005】このような問題の対応策として従来、フィ
ルタ交換後、界面活性剤の吸着が飽和するまでの間、数
クォート分のホトレジスト溶液をフィルタに空流しし廃
棄する手段がとられているが、これは極めて非効率的で
ムダも多い。これに対し、上記ホトレジスト溶液に代え
て、該ホトレジスト溶液の溶剤と同一の溶剤にストリエ
ーション防止剤(フッ素系界面活性剤)を添加したもの
にフィルタを含浸、飽和させてから用いるという方法が
提案されている(特開平4−296013号公報、等)
が、この方法においても、製造工程数がそれだけ多くな
ることや、ストリエーション防止剤のムダなどの問題が
ある。さらにまた、他の観点からの対応策として、フィ
ルタへの界面活性剤の吸着量を見越して、あらかじめ多
めに界面活性剤を配合したホトレジスト溶液を用いるこ
とにより、フィルタろ過後のホトレジスト溶液中の界面
活性剤量をストリエーション防止に適当量程度のものと
するやり方もある。しかしながら、この場合でも、連続
的なろ過・供給量が多くなるにつれストリエーションの
発生がみられるという問題がある。すなわち従来のいず
れの方法によっても、連続的なろ過・供給において、ホ
トレジスト溶液中の界面活性剤の配合量規定によってス
トリエーションの発生を抑えることがむずかしく、ろ過
後のホトレジスト溶液中の界面活性剤量を一定に保って
ストリエーションのない塗布膜を基板上に連続的に安定
かつ確実に供給することができなかった。
As a countermeasure against such a problem, conventionally, a means of flushing a few quarts of photoresist solution to the filter and discarding it is taken after the filter is replaced until the adsorption of the surfactant is saturated. , This is extremely inefficient and wasteful. On the other hand, instead of the photoresist solution, a method is proposed in which a filter is impregnated and saturated with the same solvent as the solvent of the photoresist solution added with an anti-striation agent (fluorine-based surfactant) before use. (JP-A-4-296013, etc.)
However, even in this method, there are problems such as an increase in the number of manufacturing steps and waste of the striation preventing agent. Furthermore, as a countermeasure from another point of view, the amount of the surfactant adsorbed on the filter is taken into consideration, and a photoresist solution containing a large amount of the surfactant in advance is used, so that the interface in the photoresist solution after filter filtration is increased. There is also a method in which the amount of activator is set to an appropriate amount for preventing striation. However, even in this case, there is a problem that striations occur as the continuous filtration / supply amount increases. That is, it is difficult to suppress the occurrence of striations by controlling the blending amount of the surfactant in the photoresist solution in continuous filtration / supply by any of the conventional methods, and the amount of the surfactant in the photoresist solution after filtration is difficult. It was impossible to continuously and stably supply the coating film having no striation on the substrate while keeping the temperature constant.

【0006】[0006]

【発明が解決しようとする課題】本発明はかかる事情に
鑑みてなされたもので、その目的とするところは、ホト
レジスト溶液の連続的なろ過・供給におけるパーティク
ルの除去効率の低下を防止し、ホトレジスト塗布性の向
上、素子等の製品の製造効率の増大、製造コストの低下
を図る一方、界面活性剤を配合したホトレジスト溶液に
おいては、ストリエーションのない塗布膜を基板上に連
続的に安定かつ確実に供給することができるホトレジス
ト溶液供給方法を提供することにある。
SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and an object thereof is to prevent a decrease in particle removal efficiency in continuous filtration / supply of a photoresist solution, and While improving coating properties, increasing manufacturing efficiency of products such as elements, and reducing manufacturing cost, in photoresist solutions containing surfactants, coating films without striations are continuously and reliably formed on the substrate. Another object of the present invention is to provide a method for supplying a photoresist solution which can be supplied to

【0007】[0007]

【課題を解決するための手段】本発明者らはかかる課題
を解決するために鋭意研究を重ねた結果、ホトレジスト
溶液の基板上への連続的な供給において、ろ過用フィル
タとしてポリアルケン膜より成るものを使用することに
よって上記課題を解決することができることを見出し、
これに基づいて本発明を完成させるに至った。
Means for Solving the Problems The inventors of the present invention have conducted extensive studies to solve the above problems, and as a result, in the continuous supply of a photoresist solution onto a substrate, a polyalkene film was used as a filter for filtration. Found that the above problems can be solved by using
Based on this, the present invention has been completed.

【0008】すなわち本発明によれば、ホトレジスト溶
液をポリアルケン膜から成るフィルタでろ過後、基板上
へ供給することを特徴とするホトレジスト溶液供給方法
が提供される。
That is, according to the present invention, there is provided a photoresist solution supply method characterized in that the photoresist solution is filtered on a filter made of a polyalkene film and then supplied onto a substrate.

【0009】以下に、本発明のホトレジスト溶液供給方
法について詳述する。
The photoresist solution supply method of the present invention will be described in detail below.

【0010】本発明に用いられるホトレジスト溶液は、
特に限定されるものではなく、従来のどのようなホトレ
ジスト溶液も使用することができるが、微細加工性の点
からアルカリ可溶性樹脂、キノンジアジド基含有化合物
を配合し、さらにストリエーション防止の点から界面活
性剤を配合した樹脂組成物を有機溶剤に溶解したポジ型
ホトレジスト溶液が好適に用いられる。
The photoresist solution used in the present invention is
It is not particularly limited, and any conventional photoresist solution can be used, but an alkali-soluble resin and a quinonediazide group-containing compound are blended from the viewpoint of microfabrication, and further surface active from the viewpoint of striation prevention. A positive photoresist solution prepared by dissolving a resin composition containing an agent in an organic solvent is preferably used.

【0011】ここでアルカリ可溶性樹脂としては、例え
ばアルカリ可溶性のノボラック樹脂、アクリル樹脂、ス
チレンとアクリル酸との共重合体、ヒドロキシスチレン
の重合体、ポリビニルフェノール、ポリα−メチルビニ
ルフェノール等が例示的に挙げられ、中でもアルカリ可
溶性ノボラック樹脂が特に好ましい。このアルカリ可溶
性ノボラック樹脂としては、従来ポジ型ホトレジスト溶
液において被膜形成用物質として慣用されているもの、
例えばフェノール、クレゾール、キシレノール等の芳香
族ヒドロキシ化合物とホルムアルデヒド等のアルデヒド
類とを酸性触媒の存在下に縮合させたものなどが好適に
用いられるが、これらに限定されるものではない。この
アルカリ可溶性ノボラック樹脂としては、低分子領域を
カットした重量平均分子量が2000〜20000、好
ましくは5000〜15000の範囲のものが好適に使
用される。
Examples of the alkali-soluble resin include alkali-soluble novolac resins, acrylic resins, copolymers of styrene and acrylic acid, polymers of hydroxystyrene, polyvinylphenol, poly-α-methylvinylphenol and the like. Among them, alkali-soluble novolac resins are particularly preferable. As the alkali-soluble novolak resin, those conventionally used as a film-forming substance in a positive photoresist solution,
For example, those obtained by condensing an aromatic hydroxy compound such as phenol, cresol and xylenol with an aldehyde such as formaldehyde in the presence of an acidic catalyst are preferably used, but the present invention is not limited thereto. As the alkali-soluble novolac resin, one having a weight average molecular weight of 2,000 to 20,000, preferably 5,000 to 15,000 with the low molecular weight region cut is preferably used.

【0012】キノンジアジド基含有化合物は感光性成分
をなすもので、例えばオルトベンゾキノンジアジド、オ
ルトナフトキノンジアジド、オルトアントラキノンジア
ジド等のキノンジアジド類のスルホン酸またはその官能
性誘導体(例えばスルホン酸クロリドなど)と、フェノ
ール性水酸基またはアミノ基を有する化合物とを部分若
しくは完全エステル化、あるいは部分若しくは完全アミ
ド化したもの等が具体的に挙げられる。
The quinonediazide group-containing compound constitutes a photosensitive component, and includes, for example, sulfonic acids of quinonediazides such as orthobenzoquinonediazide, orthonaphthoquinonediazide, orthoanthraquinonediazide or functional derivatives thereof (eg, sulfonic acid chloride), and phenol. Particular or complete esterification, or partial or complete amidation with a compound having a neutral hydroxyl group or an amino group is specifically mentioned.

【0013】このフェノール性水酸基またはアミノ基を
有する化合物としては、例えば2,3,4−トリヒドロ
キシベンゾフェノン、2,2’,4,4’−テトラヒド
ロキシベンゾフェノン、2,3,4,4’−テトラヒド
ロキシベンゾフェノン等のポリヒドロキシベンソフェノ
ン類;1−〔1−(4−ヒドロキシフェニル)イソプロ
ピル〕−4−〔1,1−ビス(4−ヒドロキシフェニ
ル)エチル〕ベンゼン;トリス(4−ヒドロキシフェニ
ル)メタン、ビス(4−ヒドロキシ−3,5−ジメチル
フェニル)−4−ヒドロキシフェニルメタン、ビス(4
−ヒドロキシ−2,5−ジメチルフェニル)−4−ヒド
ロキシフェニルメタン、ビス(4−ヒドロキシ−3,5
−ジメチルフェニル)−2−ヒドロキシフェニルメタ
ン、ビス(4−ヒドロキシ−2,5−ジメチルフェニ
ル)−2−ヒドロキシフェニルメタン等のトリス(ヒド
ロキシフェニル)メタン類またはそのメチル置換体;ビ
ス(3−シクロヘキシル−4−ヒドロキシフェニル)−
3−ヒドロキシフェニルメタン、ビス(3−シクロヘキ
シル−4−ヒドロキシフェニル)−2−ヒドロキシフェ
ニルメタン、ビス(3−シクロヘキシル−4−ヒドロキ
シフェニル)−4−ヒドロキシフェニルメタン、ビス
(5−シクロヘキシル−4−ヒドロキシ−2−メチルフ
ェニル)−2−ヒドロキシフェニルメタン、ビス(5−
シクロヘキシル−4−ヒドロキシ−2−メチルフェニ
ル)−3−ヒドロキシフェニルメタン、ビス(5−シク
ロヘキシル−4−ヒドロキシ−2−メチルフェニル)−
4−ヒドロキシフェニルメタン、ビス(3−シクロヘキ
シル−2−ヒドロキシフェニル)−3−ヒドロキシフェ
ニルメタン、ビス(3−シクロヘキシル−2−ヒドロキ
シフェニル)−4−ヒドロキシフェニルメタン、ビス
(3−シクロヘキシル−2−ヒドロキシフェニル)−2
−ヒドロキシフェニルメタン、ビス(5−シクロヘキシ
ル−2−ヒドロキシ−4−メチルフェニル)−2−ヒド
ロキシフェニルメタン、ビス(5−シクロヘキシル−2
−ヒドロキシ−4−メチルフェニル)−4−ヒドロキシ
フェニルメタン等のトリス(シクロヘキシルヒドロキシ
フェニル)メタン類またはそのメチル置換体;その他水
酸基またはアミノ基を有する化合物、例えばフェノー
ル、フェノール樹脂、p−メトキシフェノール、ジメチ
ルフェノール、ヒドロキノン、ビスフェノールA、ポリ
ヒドロキシジフェニルアルカン、ポリヒドロキシジフェ
ニルアルケン、α,α’,α''−トリス(4−ヒドロキ
シフェニル)−1,3,5−トリイソプロピルベンゼ
ン、ナフトール、ピロカテコール、ピロガロール、ピロ
ガロールモノメチルエーテル、ピロガロール−1,3−
ジメチルエーテル、没食子酸、水酸基を一部残してエス
テル化またはエーテル化された没食子酸、アニリン、p
−アミノジフェニルアミン等が挙げられる。中でもポリ
ヒドロキシベンゾフェノンとナフトキノン−1,2−ジ
アジド−5−スルホン酸またはナフトキノン−1,2−
ジアジド−4−スルホン酸との完全エステル化物や部分
エステル化物等が好ましく、特に平均エステル化度が7
0%以上のものが好ましい。
Examples of the compound having a phenolic hydroxyl group or an amino group include 2,3,4-trihydroxybenzophenone, 2,2 ', 4,4'-tetrahydroxybenzophenone and 2,3,4,4'-. Polyhydroxybenzophenones such as tetrahydroxybenzophenone; 1- [1- (4-hydroxyphenyl) isopropyl] -4- [1,1-bis (4-hydroxyphenyl) ethyl] benzene; tris (4-hydroxyphenyl) ) Methane, bis (4-hydroxy-3,5-dimethylphenyl) -4-hydroxyphenylmethane, bis (4
-Hydroxy-2,5-dimethylphenyl) -4-hydroxyphenylmethane, bis (4-hydroxy-3,5
-Tris (hydroxyphenyl) methanes such as -dimethylphenyl) -2-hydroxyphenylmethane and bis (4-hydroxy-2,5-dimethylphenyl) -2-hydroxyphenylmethane or a methyl-substituted product thereof; bis (3-cyclohexyl) -4-hydroxyphenyl)-
3-hydroxyphenylmethane, bis (3-cyclohexyl-4-hydroxyphenyl) -2-hydroxyphenylmethane, bis (3-cyclohexyl-4-hydroxyphenyl) -4-hydroxyphenylmethane, bis (5-cyclohexyl-4-) Hydroxy-2-methylphenyl) -2-hydroxyphenylmethane, bis (5-
Cyclohexyl-4-hydroxy-2-methylphenyl) -3-hydroxyphenylmethane, bis (5-cyclohexyl-4-hydroxy-2-methylphenyl)-
4-hydroxyphenylmethane, bis (3-cyclohexyl-2-hydroxyphenyl) -3-hydroxyphenylmethane, bis (3-cyclohexyl-2-hydroxyphenyl) -4-hydroxyphenylmethane, bis (3-cyclohexyl-2- Hydroxyphenyl) -2
-Hydroxyphenylmethane, bis (5-cyclohexyl-2-hydroxy-4-methylphenyl) -2-hydroxyphenylmethane, bis (5-cyclohexyl-2)
-Hydroxy-4-methylphenyl) -4-hydroxyphenylmethane and other tris (cyclohexylhydroxyphenyl) methanes or their methyl-substituted compounds; other compounds having a hydroxyl group or an amino group, such as phenol, phenol resin, p-methoxyphenol, Dimethylphenol, hydroquinone, bisphenol A, polyhydroxydiphenylalkane, polyhydroxydiphenylalkene, α, α ′, α ″ -tris (4-hydroxyphenyl) -1,3,5-triisopropylbenzene, naphthol, pyrocatechol, Pyrogallol, Pyrogallol monomethyl ether, Pyrogallol-1,3-
Dimethyl ether, gallic acid, esterified or etherified gallic acid leaving some hydroxyl groups, aniline, p
-Aminodiphenylamine and the like. Among them, polyhydroxybenzophenone and naphthoquinone-1,2-diazide-5-sulfonic acid or naphthoquinone-1,2-
A complete esterified product or a partially esterified product with diazide-4-sulfonic acid is preferable, and an average degree of esterification is 7
It is preferably 0% or more.

【0014】また有機溶剤としては、有機酸エステル系
溶剤が好ましく、具体的には脂肪酸アルキル、あるいは
アルキレングリコールまたはそのモノアルキルエーテル
の酢酸エステル等が挙げられる。脂肪酸アルキルとして
は、例えば乳酸メチル、乳酸エチル、酢酸メチル、酢酸
エチル、酢酸ブチル、ピルビン酸メチル、ピルビン酸エ
チル、3−メトキシプロピオン酸メチル、3−エトキシ
プロピオン酸エチル等が、またアルキレングリコールま
たはそのモノアルキルエーテルの酢酸エステルとして
は、例えばエチレングリコールモノアセテート、ジエチ
レングリコールモノアセテート、プロピレングリコール
モノアセテート、ジプロピレングリコールモノアセテー
トのモノメチルエーテル、モノエチルエーテル、モノプ
ロピルエーテル、モノブチルエーテルまたはモノフェニ
ルエーテル等が挙げられる。これらは単独で用いてもよ
いし、2種以上を混合して用いてもよい。
The organic solvent is preferably an organic acid ester solvent, and specific examples thereof include fatty acid alkyl or acetic acid ester of alkylene glycol or its monoalkyl ether. Examples of the fatty acid alkyl include methyl lactate, ethyl lactate, methyl acetate, ethyl acetate, butyl acetate, methyl pyruvate, ethyl pyruvate, methyl 3-methoxypropionate, ethyl 3-ethoxypropionate, and the like, alkylene glycol or the like. Examples of acetic acid esters of monoalkyl ethers include ethylene glycol monoacetate, diethylene glycol monoacetate, propylene glycol monoacetate, monomethyl ether of dipropylene glycol monoacetate, monoethyl ether, monopropyl ether, monobutyl ether or monophenyl ether. To be These may be used alone or in combination of two or more.

【0015】界面活性剤としては、従来からのものを任
意に使用することができるが、特にはフッ素系界面活性
剤が最も好適に用いられ、例えばFC−430(住友ス
リーエム(株)製)等が具体的に挙げられる。この界面
活性剤の樹脂組成物中の配合量は、用いる界面活性剤、
樹脂組成物、有機溶剤等により異なるが、ストリエーシ
ョン防止効果の点からみると、例えばフッ素系界面活性
剤を用いた場合では、樹脂組成物(すなわちホトレジス
ト溶液から有機溶剤分を除いた成分)に対して150〜
600ppmの範囲の濃度となるよう配合するのが好ま
しい。この範囲を逸脱すると十分なストリエーション防
止効果が得られ難いため、実用的には200〜500p
pmの範囲の濃度となるように配合するのが特に好まし
い。上記配合量のフッ素系界面活性剤を含むホトレジス
ト溶液を、ポリアルケン膜から成るフィルタ(後述)を
介してろ過後、基板上へ連続的に供給した場合、供給量
がが多くなっても、ストリエーションのない塗布膜を基
板上に連続的に安定かつ確実に供給することができる。
Any conventional surfactant may be used as the surfactant, but a fluorine-based surfactant is most preferably used. For example, FC-430 (manufactured by Sumitomo 3M Limited), etc. Is specifically mentioned. The amount of this surfactant compounded in the resin composition depends on the surfactant used,
Although it varies depending on the resin composition, the organic solvent, etc., from the viewpoint of the striation prevention effect, for example, when a fluorine-based surfactant is used, the resin composition (that is, the component obtained by removing the organic solvent component from the photoresist solution) is used. 150 to
It is preferable to mix them so that the concentration is in the range of 600 ppm. If it deviates from this range, it is difficult to obtain a sufficient striation prevention effect.
It is particularly preferable that the concentration is in the range of pm. When the photoresist solution containing the above-mentioned amount of the fluorine-containing surfactant is filtered through a filter (described later) composed of a polyalkene film and continuously supplied onto the substrate, even if the supply amount increases, the striation It is possible to continuously and stably supply a coating film without a charge onto the substrate.

【0016】なおホトレジスト溶液にはさらに、従来よ
り慣用的に用いられている増感剤、着色剤などの各種添
加剤が必要に応じて配合されてもよい。
If necessary, the photoresist solution may further contain various additives such as sensitizers and colorants which are conventionally used conventionally.

【0017】本発明で用いられるフィルタはポリアルケ
ン膜から成り、具体的にはポリエチレン膜、ポリプロピ
レン膜が代表例として挙げられる。フィルタの構造とし
ては特に限定されるものではなく、従来から使用されて
いるタイプのものならどのようなものでも用いることが
でき、膜構造に限らず、中空糸構造なども用いられ得
る。中でも非対称微細構造を有するものが好適に用いら
れる。非対称微細構造とはフィルタのイン・レット(i
n−let)側とアウト・レット(out−let)側
の孔径が同じではなく、いずれか一方側の孔径が他方側
の孔径より大きい構造で、通常はイン・レット側が比較
的大きい孔径でアウト・レット側が比較的小さい孔径を
もち、パーティクル等を粒径に応じて順次ろ過するよう
になっており、効率的な除去が行われるようになってい
る。なお、フィルタの孔径は特に限定されるものではな
いが、ホトレジスト溶液ろ過に通常用いられている約
0.1μm(ポアサイズ)程度のものが用いられる。
The filter used in the present invention is composed of a polyalkene film, and specifically, a polyethylene film and a polypropylene film are typical examples. The structure of the filter is not particularly limited, and any type conventionally used can be used, and not only the membrane structure but also a hollow fiber structure or the like can be used. Among them, those having an asymmetric fine structure are preferably used. Asymmetric fine structure is the filter inlet (i
The hole diameters on the n-let side and the out-let side are not the same, and the hole diameter on either side is larger than the hole diameter on the other side. -The let side has a relatively small pore size, and particles and the like are sequentially filtered according to the particle size, so that efficient removal can be performed. Although the pore size of the filter is not particularly limited, a filter having a pore size of about 0.1 μm (pore size) usually used for filtering a photoresist solution is used.

【0018】ポリアルケン膜から成るフィルタを用いて
ろ過することにより、特にストリエーション防止のため
に界面活性剤を配合したホトレジスト溶液を用いた場合
でも、ろ過後、基板上へ連続的にホトレジスト溶液を供
給しても、ストリエーション防止効果が安定して維持さ
れ、ホトレジスト特性に悪影響を与えない。この理由は
ポリアルケン膜が界面活性剤を吸着しないためと推測さ
れる。すなわち上述したように、例えばフッ素系界面活
性剤を樹脂組成物に対して150〜600ppm、より
好ましくは200〜500ppmの範囲の濃度となるよ
う配合量を規定することによってストリエーションの制
御を行うことができることとなり、したがってホトレジ
スト溶液をポリアルケン膜を介してろ過し、次いで基板
上へ連続的に供給した場合、供給量が多くなっても、ス
トリエーションのない塗布膜を基板上に連続的に安定か
つ確実に供給することができる。
By filtering with a filter made of a polyalkene film, even when a photoresist solution containing a surfactant for preventing striation is used, the photoresist solution is continuously supplied onto the substrate after filtration. Even in this case, the striation prevention effect is stably maintained, and the photoresist characteristics are not adversely affected. It is speculated that this is because the polyalkene film does not adsorb the surfactant. That is, as described above, for example, striation control is performed by defining the compounding amount of the fluorine-based surfactant with respect to the resin composition so that the concentration is in the range of 150 to 600 ppm, more preferably 200 to 500 ppm. Therefore, when the photoresist solution is filtered through the polyalkene film and then continuously supplied onto the substrate, a coating film without striation can be continuously and stably formed on the substrate even if the supply amount increases. It can be reliably supplied.

【0019】このようにして本発明に係るホトレジスト
供給方法によりホトレジスト溶液をポリアルケン膜でろ
過後、基板上へ供給された均一なホトレジスト溶液は、
加熱され、基板上に所定膜厚のホトレジスト層が形成さ
れる。次いでこのホトレジスト層の形成された基板を露
光、現像、加熱処理等を行い、微細なホトレジストパタ
ーンの形成された基板を得ることができる。
As described above, after the photoresist solution is filtered through the polyalkene membrane by the photoresist supply method according to the present invention, the uniform photoresist solution supplied on the substrate is
By heating, a photoresist layer having a predetermined thickness is formed on the substrate. Then, the substrate on which the photoresist layer is formed is subjected to exposure, development, heat treatment and the like to obtain a substrate on which a fine photoresist pattern is formed.

【0020】以下に本発明の実施例について説明する
が、本発明はこれによってなんら限定されるものではな
い。なお、フィルタは、非対称微細構造を有し、イン・
レット側が比較的大孔径のものを用いた。
Examples of the present invention will be described below, but the present invention is not limited thereto. Note that the filter has an asymmetrical fine structure and
The one with a relatively large diameter on the let side was used.

【0021】[0021]

【実施例】実施例1 クレゾールノボラック樹脂23重量部、ナフトキノンジ
アジド化合物7重量部に、フッ素系界面活性剤(FC−
430;住友スリーエム(株)製)0.012重量部
(400ppmに相当)を添加し、これを酢酸ブチル6
3重量部と乳酸エチル7重量部との混合有機溶剤に溶解
し、ポジ型ホトレジスト溶液を調製した。
Example 1 23 parts by weight of cresol novolac resin, 7 parts by weight of naphthoquinonediazide compound, and a fluorosurfactant (FC-
430; 0.012 parts by weight (corresponding to 400 ppm) of Sumitomo 3M Ltd. was added, and butyl acetate 6
It was dissolved in a mixed organic solvent of 3 parts by weight and 7 parts by weight of ethyl lactate to prepare a positive photoresist solution.

【0022】次いで、このようにして調製されたポジ型
ホトレジスト溶液15クォートを1クォートずつ連続し
て、ポリエチレン(PE)膜(ポアサイズ0.1μm)
をろ過膜とするフィルタ(CWUV0SIS3;日本ミ
リポア(株)製)を通して0.4kg/cm2 の窒素加
圧下でろ過し、パーティクル(粒径0.1μm以上)の
除去を行った。
Next, 15 quarts of the positive type photoresist solution prepared in this way was continuously added to each one quart to form a polyethylene (PE) film (pore size 0.1 μm).
Through a filter (CWUV0SIS3; manufactured by Nippon Millipore Co., Ltd.) as a filtration membrane under nitrogen pressure of 0.4 kg / cm 2 to remove particles (particle diameter of 0.1 μm or more).

【0023】このようにして得られたポジ型ホトレジス
ト溶液の1クォートごとのろ過量とろ過時間を調べた結
果を図1に示す。またこのポジ型ホトレジスト溶液中の
パーティクル数(個/ml)を調べた結果を図2に示
す。
FIG. 1 shows the results of examining the filtration amount and filtration time for each quart of the positive photoresist solution thus obtained. The results of examining the number of particles (particles / ml) in this positive photoresist solution are shown in FIG.

【0024】次に、上記の1クォートずつ連続してろ過
して得られたそれぞれのポジ型ホトレジスト溶液を、6
インチシリコンウェーハ上に、3000rpmで20秒
間の回転塗布を行い、それぞれ1.3μm厚の塗布膜を
形成した後、その表面状態を観察したところ、すべての
塗布膜の面内膜厚は均一であり、ストリエーションの発
生は確認されなかった。
Next, each positive type photoresist solution obtained by continuously filtering 1 quart of the above is
After spin coating on an inch silicon wafer at 3000 rpm for 20 seconds to form a coating film having a thickness of 1.3 μm, the surface condition was observed, and the in-plane film thickness of all coating films was uniform. , No occurrence of striation was confirmed.

【0025】実施例2 実施例1で使用したPE膜から成るフィルタに代えて、
中空糸状ポリプロピレン(PP)膜(ポアサイズ0.1
μm)から成るフィルタ(キッツ(株)製)を使用した
以外は、実施例1と同様の操作により、1クォートごと
のろ過量とろ過時間との関係およびパーティクル数を調
べた結果を、それぞれ図1および図2に示す。
Example 2 Instead of the filter made of PE membrane used in Example 1,
Hollow fiber polypropylene (PP) membrane (pore size 0.1
The results of examining the relationship between the filtration amount and the filtration time for each quart and the number of particles by the same operation as in Example 1 except that a filter (μm) (manufactured by Kitz Corporation) was used. 1 and FIG.

【0026】また、実施例1と同様の操作により、スト
リエーションの発生を調べた結果、すべての塗布膜は面
内膜厚が均一で、ストリエーションの発生は確認されな
かった。
Further, as a result of examining the occurrence of striation by the same operation as in Example 1, it was confirmed that all the coating films had a uniform in-plane film thickness and the occurrence of striation was not confirmed.

【0027】実施例3 実施例1で使用したポジ型ホトレジスト溶液において、
フッ素系界面活性剤の配合量を0.0045重量部(1
50ppmに相当)に代えた以外は、実施例1と同様の
操作により調製したポジ型ホトレジスト溶液を使用し
て、実施例1と同様の操作によりストリエーションの発
生を調べた。その結果、塗布膜の面内膜厚に一部不均一
な部分が生じ、部分的なストリエーションの発生が確認
されたが、実用上問題のないものであった。
Example 3 In the positive photoresist solution used in Example 1,
The amount of the fluorine-based surfactant added is 0.0045 parts by weight (1
The occurrence of striation was examined by the same operation as in Example 1 except that the positive photoresist solution prepared by the same operation as in Example 1 was used except that the amount was changed to 50 ppm). As a result, it was confirmed that the in-plane film thickness of the coating film was partially non-uniform and partial striation occurred, but there was no problem in practical use.

【0028】実施例4 実施例1で使用したポジ型ホトレジスト溶液において、
フッ素系界面活性剤の配合量を0.006重量部(20
0ppmに相当)に代えた以外は、実施例1と同様の操
作により調製したポジ型ホトレジスト溶液を使用して、
実施例1と同様の操作によりストリエーションの発生を
調べた。その結果、すべての塗布膜は面内膜厚が均一
で、ストリエーションの発生は確認されなかった。
Example 4 In the positive photoresist solution used in Example 1,
The compounding amount of the fluorine-based surfactant is 0.006 parts by weight (20
(Corresponding to 0 ppm) except that a positive photoresist solution prepared by the same operation as in Example 1 was used,
Generation of striation was examined by the same operation as in Example 1. As a result, the in-plane film thicknesses of all the coating films were uniform, and no striation was confirmed.

【0029】実施例5 実施例1で使用したポジ型ホトレジスト溶液において、
フッ素系界面活性剤の配合量を0.015重量部(50
0ppmに相当)に代えた以外は、実施例1と同様の操
作により調製したポジ型ホトレジスト溶液を使用して、
実施例1と同様の操作によりストリエーションの発生を
調べた。その結果、すべての塗布膜は面内膜厚が均一
で、ストリエーションの発生は確認されなかった。
Example 5 In the positive photoresist solution used in Example 1,
The content of the fluorine-based surfactant is 0.015 parts by weight (50
(Corresponding to 0 ppm) except that a positive photoresist solution prepared by the same operation as in Example 1 was used,
Generation of striation was examined by the same operation as in Example 1. As a result, the in-plane film thicknesses of all the coating films were uniform, and no striation was confirmed.

【0030】実施例6 実施例1で使用したポジ型ホトレジスト溶液において、
フッ素系界面活性剤の配合量を0.018量部(600
ppmに相当)に代えた以外は、実施例1と同様の操作
により調製したポジ型ホトレジスト溶液を使用して、実
施例1と同様の操作によりストリエーションの発生を調
べた。その結果、塗布膜の面内膜厚に一部不均一な部分
が生じ、部分的なストリエーションの発生が確認された
が、実用上問題のないものであった。
Example 6 In the positive photoresist solution used in Example 1,
The compounding amount of the fluorine-based surfactant is 0.018 parts by weight (600
The occurrence of striation was examined by the same operation as in Example 1 except that the positive photoresist solution prepared by the same operation as in Example 1 was used, except that it was replaced with (corresponding to ppm). As a result, it was confirmed that the in-plane film thickness of the coating film was partially non-uniform and partial striation occurred, but there was no problem in practical use.

【0031】実施例7 実施例3において、使用フィルタを実施例2で用いた中
空糸状PP膜に代えた以外は、実施例1と同様の操作に
よりストリエーションの発生を調べた。その結果、塗布
膜の面内膜厚に一部不均一な部分が生じ、部分的なスト
リエーションが確認されたが、実用上問題のないもので
あった。
Example 7 The occurrence of striation was examined in the same manner as in Example 1 except that the filter used was replaced with the hollow fiber PP membrane used in Example 2. As a result, a part of the in-plane film thickness of the coating film was non-uniform and partial striation was confirmed, but there was no practical problem.

【0032】実施例8 実施例4において、使用フィルタを実施例2で用いた中
空糸状PP膜に代えた以外は、実施例1と同様の操作に
よりストリエーションの発生を調べた。その結果、すべ
ての塗布膜は面内膜厚が均一で、ストリエーションの発
生は確認されなかった。
Example 8 In Example 4, the occurrence of striation was examined by the same operation as in Example 1 except that the filter used was replaced by the hollow fiber PP membrane used in Example 2. As a result, the in-plane film thicknesses of all the coating films were uniform, and no striation was confirmed.

【0033】実施例9 実施例5において、使用フィルタを実施例2で用いた中
空糸状PP膜に代えた以外は、実施例1と同様の操作に
よりストリエーションの発生を調べた。その結果、すべ
ての塗布膜は面内膜厚が均一で、ストリエーションの発
生は確認されなかった。
Example 9 The occurrence of striation was examined in the same manner as in Example 1 except that the filter used was replaced by the hollow fiber PP membrane used in Example 2. As a result, the in-plane film thicknesses of all the coating films were uniform, and no striation was confirmed.

【0034】実施例10 実施例6において、使用フィルタを実施例2で用いた中
空糸状PP膜に代えた以外は、実施例1と同様の操作に
よりストリエーションの発生を調べた。その結果、塗布
膜の面内膜厚に一部不均一な部分が生じ、部分的なスト
リエーションが確認されたが、実用上問題のないもので
あった。
Example 10 In Example 6, the occurrence of striation was examined by the same operation as in Example 1 except that the filter used was replaced by the hollow fiber PP membrane used in Example 2. As a result, a part of the in-plane film thickness of the coating film was non-uniform and partial striation was confirmed, but there was no practical problem.

【0035】比較例1 実施例1で使用したフィルタをポリテトラフルオロエチ
レン(PTFE)膜(ポアサイズ0.1μm)をろ過膜
とするフィルタ(DFA4201FTE;日本ポール
(株)製)に代えた以外は、実施例1と同様の操作によ
りパーティクル除去を行った。
COMPARATIVE EXAMPLE 1 Except that the filter used in Example 1 was replaced with a filter (DFA4201FTE; manufactured by Nippon Pall Ltd.) using a polytetrafluoroethylene (PTFE) membrane (pore size 0.1 μm) as a filtration membrane. Particles were removed by the same operation as in Example 1.

【0036】このようにして得られたポジ型ホトレジス
ト溶液の1クォートごとのろ過量とろ過時間を調べた結
果を図1に示す。またこのポジ型ホトレジスト溶液中の
パーティクル数(個/ml)を調べた結果を図2に示
す。
FIG. 1 shows the results of examining the filtration amount and filtration time for each quart of the positive photoresist solution thus obtained. The results of examining the number of particles (particles / ml) in this positive photoresist solution are shown in FIG.

【0037】図1の結果から明らかなように、比較例1
のPTFE膜でのろ過時間は、1クォート目では7分間
強であったのが15クォート目では約12分間もかかる
ようになった。一方、実施例1のPE膜でのろ過では1
クォート目のろ過時間が7分弱のものが15クォート目
でも8分間ですんだ。また実施例2のPP膜でのろ過は
1クォート目のろ過時間が6分間のものが15クォート
目でも6分30秒程度ですみ、ほとんど変わらなかっ
た。すなわち実施例1、2は比較例1に比べてフィルタ
の目づまり等が少なく、それだけフィルタの交換頻度が
少なくですみ、製造コスト面などで有利である。また基
板への塗布性もより良好となる。
As is clear from the results shown in FIG. 1, Comparative Example 1
Filtration time with the PTFE membrane was 7 minutes at the 1st quart, but it took about 12 minutes at the 15th quart. On the other hand, the filtration with the PE membrane of Example 1 was 1
If the filtration time for quart eyes is less than 7 minutes, it will take 8 minutes for 15 quarts. Further, the filtration with the PP membrane of Example 2 took about 6 minutes and 30 seconds even when the filtration time at the 1st quart was 6 minutes and at the 15th quart, which was almost unchanged. That is, Examples 1 and 2 have less clogging of the filter and the like as compared with Comparative Example 1, the frequency of replacement of the filter is less, and it is advantageous in terms of manufacturing cost. In addition, the coating property on the substrate becomes better.

【0038】また図2の結果から明らかなように、比較
例1のPTFE膜によるパーティクルの除去率は、1〜
15クォートにかけて徐々に低下したが、実施例1のP
E膜、実施例2のPP膜によるパーティクル除去率は、
それぞれ1〜15クォートでほとんど除去率の低下がみ
られなかった。すなわち実施例1、2の供給方法によれ
ば、比較例1の方法を用いた場合に比べて、塗布性等に
優れ、製造効率も良好な製品製造が可能となる。
As is clear from the results of FIG. 2, the removal rate of particles by the PTFE film of Comparative Example 1 is 1 to
Although it gradually decreased over 15 quarts, P of Example 1
The particle removal rate by the E film and the PP film of Example 2 is
Almost no decrease in removal rate was observed at 1 to 15 quarts. That is, according to the supply methods of Examples 1 and 2, it is possible to manufacture products having excellent coatability and manufacturing efficiency as compared with the case of using the method of Comparative Example 1.

【0039】次に、実施例1と同様にしてそれぞれのポ
ジ型ホトレジスト溶液を、6インチシリコンウェーハ上
に、3000rpmで20秒間の回転塗布を行い、それ
ぞれ1.3μm厚の塗布膜を形成した後、その表面状態
を観察したところ、6〜15クォートろ過分から得られ
た塗布膜の面内膜厚は均一であり、ストリエーションの
発生が確認されなかったが、1〜5クォートろ過分から
得られた塗布膜の面内膜厚は不均一で、ストリエーショ
ンの発生が確認され、実用に適さなかった。
Then, in the same manner as in Example 1, each positive photoresist solution was spin-coated on a 6-inch silicon wafer at 3000 rpm for 20 seconds to form a coating film having a thickness of 1.3 μm. The surface state was observed, and the in-plane film thickness of the coating film obtained from the 6 to 15 quart filtered portion was uniform, and the occurrence of striation was not confirmed, but it was obtained from the 1 to 5 quart filtered portion. The in-plane film thickness of the coating film was not uniform, and striation was confirmed, which was not suitable for practical use.

【0040】比較例2 実施例3のポジ型ホトレジスト溶液を用い、使用フィル
タを比較例1で用いたPTFE膜に代えた以外は、実施
例1と同様の操作によりストリエーションの発生を調べ
た。その結果、14〜15クォートろ過分から得られた
塗布膜の面内膜厚は均一であり、ストリエーションの発
生は確認されなかったが、1〜13クォートろ過分から
得られた塗布膜の面内膜厚は不均一で、ストリエーショ
ンの発生が確認され、実用に適さなかった。
Comparative Example 2 The occurrence of striation was examined by the same operation as in Example 1 except that the positive photoresist solution of Example 3 was used and the filter used was replaced with the PTFE membrane used in Comparative Example 1. As a result, the in-plane film thickness of the coated film obtained from the 14 to 15 quart filtered portion was uniform and no striation was confirmed, but the in-plane film of the coated film obtained from the 1 to 13 quart filtered portion was not confirmed. The thickness was not uniform and striation was confirmed, which was not suitable for practical use.

【0041】比較例3 実施例4のポジ型ホトレジスト溶液を用い、使用フィル
タを比較例1で用いたPTFE膜に代えた以外は、実施
例1と同様の操作によりストリエーションの発生を調べ
た。その結果、9〜15クォートろ過分から得られた塗
布膜の面内膜厚は均一であり、ストリエーションの発生
は確認されなかったが、1〜8クォートろ過分から得ら
れた塗布膜の面内膜厚は不均一で、ストリエーションの
発生が確認され、実用に適さなかった。
Comparative Example 3 The occurrence of striation was examined by the same operation as in Example 1 except that the positive photoresist solution of Example 4 was used and the filter used was the PTFE membrane used in Comparative Example 1. As a result, the in-plane film thickness of the coated film obtained from the 9 to 15 quart filtered portion was uniform and no striation was confirmed, but the in-plane film of the coated film obtained from the 1 to 8 quart filtered portion was not confirmed. The thickness was not uniform and striation was confirmed, which was not suitable for practical use.

【0042】比較例4 実施例5のポジ型ホトレジスト溶液を用い、使用フィル
タを比較例1で用いたPTFE膜に代えた以外は、実施
例1と同様の操作によりストリエーションの発生を調べ
た。その結果、5〜15クォートろ過分から得られた塗
布膜の面内膜厚は均一であり、ストリエーションの発生
は確認されなかったが、1〜4クォートろ過分から得ら
れた塗布膜の面内膜厚は不均一で、ストリエーションの
発生が確認され、実用に適さなかった。
Comparative Example 4 The occurrence of striation was examined by the same operation as in Example 1 except that the positive photoresist solution of Example 5 was used and the filter used was replaced with the PTFE membrane used in Comparative Example 1. As a result, the in-plane film thickness of the coating film obtained from 5 to 15 quart filtration was uniform and no striation was confirmed, but the in-plane film of the coating film obtained from 1 to 4 quart filtration was confirmed. The thickness was not uniform and striation was confirmed, which was not suitable for practical use.

【0043】比較例5 実施例6のポジ型ホトレジスト溶液を用い、使用フィル
タを比較例1で用いたPTFE膜に代えた以外は、実施
例1と同様の操作によりストリエーションの発生を調べ
た。その結果、4〜15クォートろ過分から得られた塗
布膜の面内膜厚は均一であり、ストリエーションの発生
は確認されなかったが、1〜3クォートろ過分から得ら
れた塗布膜の面内膜厚は不均一で、ストリエーションの
発生が確認され、実用に適さなかった。
Comparative Example 5 The occurrence of striation was examined by the same operation as in Example 1 except that the positive photoresist solution of Example 6 was used and the filter used was replaced with the PTFE membrane used in Comparative Example 1. As a result, the in-plane film thickness of the coating film obtained from the 4 to 15 quart filtration portion was uniform and no striation was confirmed, but the in-plane film of the coating film obtained from the 1 to 3 quart filtration portion was not confirmed. The thickness was not uniform and striation was confirmed, which was not suitable for practical use.

【0044】[0044]

【発明の効果】以上詳述したように本発明によれば、ホ
トレジスト溶液の連続的なろ過・供給におけるパーティ
クルの除去効率の低下を防止し、ホトレジスト塗布性の
向上、素子等の製品の製造効率の増大、製造コストの低
下を図る一方、界面活性剤を配合したホトレジスト溶液
においては、ろ過後のホトレジスト溶液中の界面活性剤
量を規定することによりストリエーションのない塗布膜
を基板上に連続的に安定かつ確実に供給することができ
るホトレジスト溶液供給方法を提供することができると
いう効果を奏する。
As described above in detail, according to the present invention, it is possible to prevent a decrease in particle removal efficiency in continuous filtration and supply of a photoresist solution, improve photoresist coatability, and improve manufacturing efficiency of products such as devices. In the photoresist solution containing a surfactant, the coating film without striation is continuously formed on the substrate by defining the amount of the surfactant in the photoresist solution after filtration. It is possible to provide a method for supplying a photoresist solution that can be stably and reliably supplied to the method.

【0045】[0045]

【図面の簡単な説明】[Brief description of drawings]

【0046】[0046]

【図1】ホトレジスト溶液の連続ろ過・供給における、
各クォートごとのろ過時間とろ過量を示すグラフであ
る。
FIG. 1 shows the continuous filtration and supply of photoresist solution.
It is a graph which shows the filtration time and the filtration amount for every quart.

【0047】[0047]

【図2】ホトレジスト溶液の連続ろ過・供給における、
各クォートごとのろ過液中のパーティクル数を示すグラ
フである。
FIG. 2 In continuous filtration / supply of photoresist solution,
It is a graph which shows the number of particles in the filtrate for every quart.

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 ホトレジスト溶液をポリアルケン膜から
成るフィルタでろ過後、基板上へ供給することを特徴と
する、ホトレジスト溶液供給方法。
1. A method for supplying a photoresist solution, which comprises filtering the photoresist solution through a filter made of a polyalkene film and then supplying the photoresist solution onto a substrate.
【請求項2】 ポリアルケン膜がポリエチレン膜または
ポリプロピレン膜である、請求項1記載のホトレジスト
溶液供給方法。
2. The photoresist solution supply method according to claim 1, wherein the polyalkene film is a polyethylene film or a polypropylene film.
【請求項3】 ホトレジスト溶液がアルカリ可溶性樹
脂、キノンジアジド基含有化合物および界面活性剤を含
む樹脂組成物を溶解した有機溶剤溶液である、請求項1
または2記載のホトレジスト溶液供給方法。
3. The photoresist solution is an organic solvent solution in which a resin composition containing an alkali-soluble resin, a quinonediazide group-containing compound and a surfactant is dissolved.
Alternatively, the method of supplying a photoresist solution according to 2 above.
【請求項4】 界面活性剤がフッ素系界面活性剤であ
る、請求項3記載のホトレジスト溶液供給方法。
4. The photoresist solution supply method according to claim 3, wherein the surfactant is a fluorine-based surfactant.
【請求項5】 フッ素系界面活性剤が樹脂組成物中に1
50〜600ppmの濃度で含有される、請求項4記載
のホトレジスト溶液供給方法。
5. A fluorochemical surfactant is added to the resin composition in an amount of 1: 1.
The photoresist solution supply method according to claim 4, wherein the photoresist solution is contained at a concentration of 50 to 600 ppm.
JP18660794A 1994-07-15 1994-07-15 Photoresist solution supply method Expired - Fee Related JP3632992B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18660794A JP3632992B2 (en) 1994-07-15 1994-07-15 Photoresist solution supply method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18660794A JP3632992B2 (en) 1994-07-15 1994-07-15 Photoresist solution supply method

Publications (2)

Publication Number Publication Date
JPH0824775A true JPH0824775A (en) 1996-01-30
JP3632992B2 JP3632992B2 (en) 2005-03-30

Family

ID=16191536

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18660794A Expired - Fee Related JP3632992B2 (en) 1994-07-15 1994-07-15 Photoresist solution supply method

Country Status (1)

Country Link
JP (1) JP3632992B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007010794A1 (en) * 2005-07-19 2007-01-25 Tokyo Ohka Kogyo Co., Ltd. Process for producing resist composition, filtering apparatus, resist composition applicator, and resist composition
JP2008058643A (en) * 2006-08-31 2008-03-13 Fujifilm Corp Method for preparing dye-containing negative curable composition, and color filter and method for producing the same
US7867559B2 (en) 2004-11-25 2011-01-11 Az Electronic Materials Usa Corp. Photoresist coating liquid supplying apparatus, and photoresist coating liquid supplying method and photoresist coating apparatus using such photoresist coating liquid supplying apparatus

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7867559B2 (en) 2004-11-25 2011-01-11 Az Electronic Materials Usa Corp. Photoresist coating liquid supplying apparatus, and photoresist coating liquid supplying method and photoresist coating apparatus using such photoresist coating liquid supplying apparatus
WO2007010794A1 (en) * 2005-07-19 2007-01-25 Tokyo Ohka Kogyo Co., Ltd. Process for producing resist composition, filtering apparatus, resist composition applicator, and resist composition
JP2007025341A (en) * 2005-07-19 2007-02-01 Tokyo Ohka Kogyo Co Ltd Method for manufacturing resist composition, filtering device, coating device for resist composition, and resist composition
JP2008058643A (en) * 2006-08-31 2008-03-13 Fujifilm Corp Method for preparing dye-containing negative curable composition, and color filter and method for producing the same
US7981577B2 (en) 2006-08-31 2011-07-19 Fujifilm Corporation Process for producing dye-containing negative curable composition, color filter, and color filter production process
KR101466050B1 (en) * 2006-08-31 2014-11-27 후지필름 가부시키가이샤 Process for producing dye-containing negative curable composition, color filter, and color filter production process

Also Published As

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