JPH08236651A - Package of semiconductor element - Google Patents

Abstract

PURPOSE: To obtain a package of semiconductor element in which the semicon ductor element can be operated normally and stably for long term. CONSTITUTION: In a package where a semiconductor element 3 is received airtightly in the inner space of a container 4 comprising an insulating basic body 1 and a cover body 2, a capacitive element A is fixed to a region opposing the space for containing the semiconductor element 3 while being coated with a protective film B made of a material scarcely emitting α-rays.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor element accommodating package for accommodating semiconductor elements, and more particularly to a semiconductor for effectively preventing adverse effects of power source noise on semiconductor elements accommodated inside. The present invention relates to an element storage package.

[0002]

2. Description of the Related Art Conventionally, a semiconductor element accommodating package for accommodating a semiconductor element is generally made of an electrically insulating material such as an aluminum oxide sintered body, and has a concave portion for accommodating the semiconductor element on the upper surface and a periphery thereof. An insulating substrate having a metallized wiring layer made of a high melting point metal powder such as tungsten, molybdenum, or manganese that is led out to the outer peripheral portion, and a silver solder or the like for the metallized wiring layer for connecting each electrode of the semiconductor element to an external electric circuit. It is composed of an external lead terminal attached via a brazing material and a lid,
The semiconductor element is adhered and fixed to the bottom surface of the recess of the insulating substrate via an adhesive such as glass, resin, or a brazing material, and each electrode of the semiconductor element is electrically connected to the metallized wiring layer via a bonding wire. The lid is joined to the upper surface of the insulating base through a sealing material such as glass, resin, or brazing material,
A semiconductor device as a product is obtained by hermetically housing a semiconductor element in a container formed of an insulating base and a lid.

[0003]

However, in recent years,
The density and integration of semiconductor elements have rapidly increased, and the number of electrodes has increased significantly. The number of external lead terminals connected to each electrode of the semiconductor element has also increased rapidly, and each external lead terminal is The line width is extremely thin and the inductance is 20
It has become as high as nH. Therefore, when power and electric signals for driving are supplied to the semiconductor element through the external lead terminal, if the power supply voltage to the semiconductor element fluctuates due to the high inductance of the external lead terminal, a large noise is generated. Has occurred, and this is supplied to the semiconductor device together with the electric signal, causing the semiconductor device to malfunction.

Therefore, in order to solve the above-mentioned drawbacks, a capacitive element made of barium titanate porcelain or the like is attached to the inner surface of the lid of the container for housing the semiconductor element in a region facing the void for housing the semiconductor element. , A pair of electrodes of the capacitive element is connected to a power electrode and a ground electrode of the semiconductor element, and a constant capacitance is provided between the power electrode and the ground electrode of the semiconductor element to supply power to the semiconductor element. The capacitance caused to absorb noise caused by voltage fluctuations,
It is possible to prevent malfunction of the semiconductor element.

However, in this semiconductor element housing package, the barium titanate porcelain or the like which constitutes the capacitive element emits a large amount of alpha rays, which acts on the semiconductor element and causes a malfunction of the semiconductor element. Will end up.

[0006]

SUMMARY OF THE INVENTION The present invention has been devised in view of the above-mentioned drawbacks, and an object thereof is to provide a semiconductor element housing package capable of normally and stably operating a semiconductor element housed therein for a long period of time. Especially.

[0007]

SUMMARY OF THE INVENTION The present invention is a semiconductor element housing package for hermetically housing a semiconductor element in an inner space of a container composed of an insulating base and a lid, wherein the semiconductor is provided on the inner surface of the lid. It is characterized in that a capacitive element is attached to a region facing an empty space for accommodating the element, and the capacitive element is covered with a protective film made of a material that emits less alpha rays.

In the present invention, the protective film is SiO ₂ --CaO--
It is characterized by being formed of ZnO glass, SiO ₂ —BaO—ZnO glass, SiO ₂ , epoxy resin, polyimide resin or a mixture thereof.

[0009]

According to the semiconductor element accommodating package of the present invention, the capacitative element is attached to the inner surface of the lid of the container accommodating the semiconductor element in a region facing the void for accommodating the semiconductor element. By connecting a pair of electrodes of the capacitive element to the power supply electrode and the ground electrode of the semiconductor element and providing a constant capacitance between the power supply electrode and the ground electrode of the semiconductor element, the power supply voltage to the semiconductor element fluctuates. The generated noise is effectively absorbed by the electrostatic capacitance, and as a result, malfunction due to noise entering the semiconductor element is eliminated, and the semiconductor element can always be operated normally and stably.

Further, according to the package for accommodating a semiconductor element of the present invention, since the capacitive element is covered with the protective film made of a material that emits less alpha rays, the semiconductor element is never irradiated with alpha rays and does not act at all. , As a result, the semiconductor element does not malfunction due to alpha rays,
It is possible to always operate normally and stably.

[0011]

The present invention will now be described in detail with reference to the accompanying drawings. FIG. 1 is a cross-sectional view showing an embodiment of a package for housing a semiconductor device of the present invention, in which 1 is an insulating base and 2 is a lid. The insulating base 1 and the lid 2 form a container 4 for housing the semiconductor element 3.

The insulating substrate 1 is composed of an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body, a silicon carbide sintered body, a glass ceramic sintered body, etc. A concave portion 1a is formed in the inner surface of the concave portion 1a for accommodating the semiconductor element 3, and the semiconductor element 3 is bonded and fixed to the bottom surface of the concave portion 1a via an adhesive such as a brazing material, glass, or resin.

When the insulating substrate 1 is made of, for example, an aluminum oxide sintered body, it is suitable for a ceramic raw material powder such as alumina (Al ₂ O ₃ ), silica (SiO ₂ ), calcia (CaO), magnesia (MgO). A simple organic solvent, a solvent is added and mixed to form a slurry, and this is molded into a sheet by a conventionally known doctor blade method, calendar roll method, etc. to obtain a ceramic green sheet (ceramic green sheet). Appropriate punching is performed on the ceramic green sheet and multiple sheets are laminated, and high temperature (about 16
It is manufactured by firing at 00 ℃.

A plurality of metallized wiring layers 5 are formed on the insulating substrate 1 from the periphery of the recess 1a to the outer periphery thereof, and the electrodes of the semiconductor element 3 are formed on the periphery of the recess 1a of the metallized wiring layer 5. An external lead terminal 7 is brazed via a brazing material to a portion that is electrically connected via a bonding wire 6 and is led to the outer peripheral portion of the insulating base 1.

Metallized wiring layer provided on the insulating substrate 1
5 is made of a high melting point metal powder such as tungsten, molybdenum or manganese, and the metallized wiring layer 5 electrically connects each electrode of the semiconductor element 3 to an external lead terminal 7 connected to an external electric circuit.

For the metallized wiring layer 5, for example, a metal paste obtained by adding and mixing an organic solvent and a solvent to a high melting point metal powder such as tungsten is preliminarily formed on a ceramic green sheet serving as the insulating substrate 1 by a conventionally known screen printing method. Insulating substrate by printing and applying in a predetermined pattern
1 is formed in a predetermined position.

The metallized wiring layer 5 is formed by depositing a metal such as nickel and gold, which has excellent corrosion resistance and has a good wettability with a brazing material, on the exposed surface to a thickness of 1.0 to 20.0 μm by a plating method. The metallized wiring layer 4 can effectively prevent oxidative corrosion of the metallized wiring layer 4.
It is possible to strengthen the brazing connection between the 5, the bonding wire 6, and the external lead terminal 7. Therefore,
On the surface of the metallized wiring layer 5, it is preferable to deposit a metal such as nickel or gold having excellent corrosion resistance and good wettability with the brazing material to a thickness of 1.0 to 20.0 μm by a plating method.

The external lead terminals 7 brazed to the metallized wiring layer 5 adhered to the insulating substrate 1 are made of a metal material such as iron-nickel-cobalt alloy or iron-nickel alloy, and each electrode of the semiconductor element 3 is It acts to electrically connect to an external electric circuit.

The external lead terminal 7 is formed by forming an ingot (lump) of iron-nickel-cobalt alloy or the like into a predetermined plate shape by adopting a conventionally known metal processing method such as a rolling processing method or a punching processing method. Produced.

On the other hand, a lid 2 is joined to the upper surface of the insulating base 1 via a sealing material made of solder or the like so as to close the recess 1a for accommodating the semiconductor element 3, whereby the insulating base 1 and the lid are joined together. A semiconductor element 3 is hermetically housed in a container 4 composed of a body 2.

Like the insulating substrate 1, the lid 2 is made of an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body, a silicon carbide sintered body, a glass ceramic sintered body, or the like. It is formed in a plate shape by the same method as the insulating substrate 1.

Further, the lid 2 is provided on its inner surface with a capacitive element A in a region of the container 4 facing the void for accommodating the semiconductor element 3.
Is attached.

The capacitive element A is Ag, AgPd, AgPt, Cu, N.
A pair of electrodes 8 and 10 made of i, Au, etc., and the pair of electrodes 8
, SrTiO ₃ , BaTiO ₃ , Pb (Mg _1/3 N
b _2/3 ) O ₃ , Pb (Fe _1/3 Nb _2/3 ) O ₃ Pb (Fe _2/3 W _1/3 )
And a dielectric layer 9 made of, for example, a pair of electrodes 8 and 10 connected to the power supply electrode and the ground electrode of the semiconductor element 3 to provide a constant electrostatic capacitance between the power supply electrode and the ground electrode of the semiconductor element 3. If a capacitance is applied, the capacitance will be
It is possible to effectively absorb the noise generated by the fluctuation of the power supply voltage to the semiconductor element 3 and effectively prevent the malfunction caused by the noise entering the semiconductor element 3.

The capacitive element A has Ag and AgP on the surface of the lid 2.
An electrode 8 made of d, AgPt, Cu, Ni, Au or the like is deposited to a predetermined thickness by a printing method, a vapor deposition method, a sputtering method or the like, and then SrTiO ₃ , BaTiO ₃ , Pb (Mg _{1 /} Mg _{1 / 3} Nb
_2/3 ) O ₃ , Pb (Fe _1/3 Nb _2/3 ) O ₃ Pb (Fe _2/3 W _1/3 ), etc. are used to form a dielectric layer 9 by printing, vapor deposition, sputtering, etc. Deposited to thickness and finally the dielectric layer 9
It is formed by depositing an electrode 10 made of Ag, AgPd, AgPt, Cu, Ni, Au or the like on the upper surface to a predetermined thickness by a printing method, a vapor deposition method, a sputtering method or the like.

The connection of the capacitive element A to the power electrode and the ground electrode of the semiconductor element 3 is performed by a power source branched from a metallized wiring layer to which the power electrode and the ground electrode of the semiconductor element 3 are previously connected to the upper surface of the insulating substrate 1. An electrode lead-out pad 5a and a ground electrode lead-out pad 5b are provided in advance, and the insulating base 1 is covered with a lid.
When joining 2 via the sealing material, one electrode 10 of the capacitive element A attached to the lid 2 is connected to the lead-out pad for the power electrode.
5a, the other electrode 8 is joined to the ground electrode lead-out pad 5b via solder, respectively.

In the case of the present embodiment, one electrode 8 of the capacitive element A also acts as a base metal layer when the lid 2 made of an electrically insulating material is joined to the insulating base 1 via the sealing material. Then, the one electrode 8 of the capacitive element A is bonded to the lead-out pad 5b for the ground electrode provided on the upper surface of the insulating substrate 1 by soldering or the like, so that the lid 2 is attached to the insulating substrate 1 and the semiconductor element 3 is placed inside the container 4. It is joined so that it can be hermetically sealed.

Further, the surface of the capacitive element A is SiO ₂
CaO ZnO glass, SiO ₂ BaO ZnO glass, SiO ₂ ,
It is covered with a protective film B made of a material such as epoxy resin, polyimide resin, or a mixture of these which emits little alpha rays. The protective film B emits a large amount of alpha rays from the capacitive element A, and this is inside the container 4. The semiconductor element 3 housed in is effectively prevented from irradiating and acting, so that the semiconductor element 3 does not malfunction due to alpha rays and can always operate normally and stably. .

The protective film B is formed by coating a suitable organic solvent, a paste obtained by mixing and mixing a solvent such as SiO ₂ CaO ZnO glass, or a liquid epoxy resin on the surface of the capacitive element A by a conventionally known printing method. And then heat-treating it to give a predetermined thickness (10 to 100 μm) on the surface of the capacitive element A.
Be attached to.

Thus, according to the above-mentioned package for accommodating semiconductor elements, the semiconductor element 3 is formed on the bottom surface of the recess 1a of the insulating substrate 1.
Are bonded and fixed via an adhesive such as a brazing material, glass, or resin, and each electrode of the semiconductor element 3 is electrically connected to the metallized wiring layer 5 via a bonding wire 6, and then the insulating substrate 1 The lid 2 is bonded to the upper surface via a sealing material such as solder, and the semiconductor element 3 is hermetically sealed inside the container 4 composed of the insulating base 1 and the metallic lid 2 to form the final semiconductor device. Becomes

The present invention is not limited to the above-mentioned embodiments, but various modifications can be made without departing from the gist of the present invention.

[0031]

According to the package for accommodating a semiconductor element of the present invention, the capacitive element is attached to the inner surface of the lid of the container accommodating the semiconductor element in a region facing the void for accommodating the semiconductor element. Therefore, if a pair of electrodes of the capacitive element is connected to the power electrode and the ground electrode of the semiconductor element and a constant capacitance is provided between the power electrode and the ground electrode of the semiconductor element, the power supply voltage to the semiconductor element is Noise caused by fluctuations will be effectively absorbed by the capacitance,
As a result, malfunction due to noise entering the semiconductor element is eliminated, and the semiconductor element can always be operated normally and stably.

Further, according to the package for accommodating a semiconductor element of the present invention, since the capacitive element is covered with the protective film made of a material that emits less alpha rays, the semiconductor element is never irradiated with alpha rays and does not act at all. , As a result, the semiconductor element does not malfunction due to alpha rays,
It is possible to always operate normally and stably.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing an embodiment of a semiconductor element housing package of the present invention.

[Explanation of symbols]

 1 ... Insulating substrate 1a ... Recessed portion 2 ... Lid body 3 ... Semiconductor element 4 ... Container 5 ... Metallization Wiring layer 7: External lead terminal A: Capacitive element B: Protective film

Claims (2)

[Claims] 1. A semiconductor element housing package for hermetically housing a semiconductor element in an inner space of a container composed of an insulating base and a lid, wherein the inner surface of the lid is a space for housing the semiconductor element. A package for accommodating a semiconductor element, characterized in that a capacitor element is attached to a region facing each other, and a surface of the capacitor element is covered with a protective film made of a material that emits less alpha rays. 2. The protective film is SiO ₂ CaO ZnO glass,
The package for housing a semiconductor element according to claim 1, which is made of SiO ₂ BaO ZnO glass, SiO ₂ , epoxy resin, polyimide resin, or a mixture thereof.