JPH06236938A - Package for semiconductor-element housing - Google Patents

Abstract

PURPOSE:To provide a package, for semiconductor-element housing, wherein it can effectively prevent the influence of heat and the influence of a power- supply noise on a semiconductor element and it can operate the semiconductor element normally and stably for a long time. CONSTITUTION:In a package for semiconductor-element housing, connecting pads 5a connected to a power-supply electrode and a grounding electrode for a semiconductor element housed at the inside are formed in an insulating container 1 which has a space used to house the semiconductor element at the inside and which is composed of an aluminum nitride sintered body, and a capacity element is attached and bonded to the connecting pads 5a. In the package, a sheet member 9 composed of an aluminum oxide sintered body is interposed between the connecting pads 5a formed in the insulating container 1 and the capacity element 8.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor element accommodating package for accommodating semiconductor elements, and more particularly to a semiconductor for effectively preventing adverse effects of power source noise on semiconductor elements accommodated inside. The present invention relates to an element storage package.

[0002]

2. Description of the Related Art Conventionally, as shown in FIG. 3, a semiconductor element accommodating package for accommodating a semiconductor element is made of an aluminum oxide sintered body and has a concave portion 11a for accommodating the semiconductor element 10 and an upper surface thereof. An insulating substrate 11 having a metallized wiring layer 12 made of a refractory metal powder such as tungsten, molybdenum, or manganese, which is led out from the periphery of the recess 11a to the lower surface, and the metallized wiring for connecting each electrode of the semiconductor element 10 to an external electric circuit. It is composed of an external lead terminal 13 attached to the layer 12 via a brazing material such as silver solder, and a lid 14, and the semiconductor element is provided on the bottom surface of the recess 11a of the insulating base 11.
10 is adhered and fixed through an adhesive such as glass, resin, or a brazing material, and each electrode is electrically connected to the metallized wiring layer 12 through a bonding wire 15, and thereafter, a lid is provided on the upper surface of the insulating base 11. A semiconductor device is obtained as a product by bonding 14 together with a sealing material such as glass, resin, a brazing material, etc., and hermetically sealing the semiconductor element 10 inside a container composed of the insulating base 11 and the lid 14.

Incidentally, such a conventional semiconductor element housing package is a semiconductor element housed inside the upper surface of the insulating base 11.
A connection pad 16 connected to the power supply electrode 10 and the ground electrode 10 is formed, and a capacitive element 17 having a barium titanate porcelain as a dielectric is filled in the connection pad with a brazing material such as solder or an epoxy resin filled with silver powder. Directly attached via a conductive adhesive formed by, and by connecting a capacitive element between the power electrode and the ground electrode of the semiconductor element 10 to effectively prevent the adverse effect of power noise to the semiconductor element 10. Has become.

However, in this conventional semiconductor element housing package, the insulating substrate 11 for housing the semiconductor element 10 is made of an aluminum oxide sintered body, and its thermal conductivity is 15 W /
It is as low as m · K, and recently, the semiconductor element 10 has a higher density,
Due to the rapid progress of high integration, the amount of heat generated per unit area and unit volume of the semiconductor element 10 has increased.
After the semiconductor element 10 is housed in the recess 11a of 11 to form a semiconductor device, when the semiconductor element 10 is operated, the semiconductor element 10 has a high temperature due to the thermal expansion coefficient of the element 10 itself,
The semiconductor element 10 has the drawback of causing thermal breakdown or causing a thermal change in its characteristics to cause a malfunction.

Therefore, in order to solve the above-mentioned drawbacks, an insulating substrate
11 is replaced with aluminum oxide sintered body and the thermal conductivity is 50 W /
The heat generated by the semiconductor element 10 is formed by an aluminum nitride sintered body that is extremely easy to transfer heat at m.
It is thought that it can be satisfactorily diffused into the atmosphere via.

[0006]

However, when the insulating substrate 11 is formed of an aluminum nitride sintered body, the thermal expansion coefficient of the aluminum nitride sintered body is 4 to 5 × 10 ^-6 / ° C.
The thermal expansion coefficient of the barium titanate porcelain that constitutes the capacitive element 17 (10 to 11 × 10 ^-6 / ° C.) is greatly different from the heat generated during the operation of the semiconductor element 10 between the insulating substrate 11 and the capacitive element 17. When applied to the joint portion of, a large thermal stress is generated in the joint portion due to the difference in thermal expansion coefficient between the two, and as a result, the thermal element causes the capacitive element 17 to deviate from the upper surface of the insulating substrate 11, 17 has caused a drawback that the adverse effect of power supply noise on the semiconductor element 10 cannot be effectively prevented.

[0007]

SUMMARY OF THE INVENTION The present invention has been devised in view of the above-mentioned drawbacks, and its purpose is to effectively prevent the influence of heat and power supply noise on a semiconductor element, and to keep the semiconductor element normal for a long period of time, and An object of the present invention is to provide a package for accommodating semiconductor devices, which can be operated stably.

[0008]

SUMMARY OF THE INVENTION The present invention provides an insulating container made of an aluminum nitride sintered body having a cavity for accommodating a semiconductor element therein, and a power supply electrode and a ground electrode of the semiconductor element accommodated therein. What is claimed is: 1. A package for storing a semiconductor element, comprising a connection pad to be connected and a capacitance element attached to the connection pad, wherein an aluminum oxide burnt material is provided between the connection pad and the capacitance element formed in the insulating container. It is characterized in that a plate member made of a unit is interposed.

[0009]

According to the package for accommodating a semiconductor element of the present invention, since the insulating container is made of the aluminum nitride sintered body, the heat generated during the operation of the semiconductor device is well dissipated into the atmosphere through the container. As a result, the semiconductor element housed inside the container is always at a low temperature, and the semiconductor element can be operated normally and stably for a long period of time.

Further, the capacitive element is interposed between the connection pads provided on the insulating container, and the plate member made of an aluminum oxide sintered body having a thermal expansion coefficient intermediate between the thermal expansion coefficient of the insulating container and the thermal expansion coefficient of the capacitive element is interposed therebetween. Since a large thermal stress is not generated between the insulating container and the capacitive element due to the attachment, the capacitive element is firmly attached to the insulating container, and the capacitive element supplies power to the semiconductor element. The adverse effects of noise are effectively prevented.

[0011]

The present invention will now be described in detail with reference to the accompanying drawings.

1 and 2 show an embodiment of a package for housing a semiconductor device according to the present invention, in which 1 is an insulating base and 2 is a lid. The insulating base 1 and the lid 2 form a container 4 for housing the semiconductor element 3. The insulating substrate 1 is made of an aluminum nitride sintered body, and has a concave portion 1a for forming a space for accommodating the semiconductor element 3 on the upper surface thereof, and the semiconductor element 3 is made of glass, resin or the like on the bottom surface of the concave portion 1a. It is adhesively fixed through an adhesive such as a brazing material.

The insulating substrate 1 made of the aluminum nitride sintered body is, for example, an organic solvent suitable for a raw material powder such as aluminum nitride (AlN), yttria (Y ₂ O ₃ ), calcia (CaO), magnesia (MgO). A ceramic green sheet (ceramic green sheet) is obtained by adding and mixing a solvent to form a slurry, and adopting the conventionally known doctor blade method, canender roll method, etc. It is manufactured by performing appropriate punching, stacking multiple sheets, and baking at high temperature (about 1800 ℃).

Since the insulating substrate 1 made of the aluminum nitride sintered body has a thermal conductivity of 50 W / m · K or more and is easy to transfer heat, even if the semiconductor element 3 generates a large amount of heat during operation. The heat is satisfactorily dissipated into the atmosphere through the insulating substrate 1, and as a result, the semiconductor element 3 never rises in temperature due to the heat generated by the element 3 itself, and the semiconductor element 3 is not destroyed by thermal destruction or characteristics. It will not change and cause malfunctions.

A plurality of metallized wiring layers 5 are deposited on the insulating substrate 1 from the periphery of the recess 1a to the lower surface, and the electrodes of the semiconductor element 3 (power supply) are formed in the periphery of the recess 1a of the metallized wiring layer 5. (Electrode, ground electrode, signal electrode) are electrically connected via the bonding wire 6, and the external lead terminal 7 connected to an external electric circuit is connected to an external electric circuit at a portion led out to the lower surface of the insulating substrate 1. It is attached via brazing material.

The metallized wiring layer 5 is made of tungsten,
A metal paste made of a refractory metal powder such as molybdenum or manganese, which is obtained by adding and mixing an appropriate organic solvent or a solvent to the refractory metal powder such as tungsten is previously known to the ceramic green sheet serving as the insulating substrate 1. By printing and applying a predetermined pattern by the screen printing method, the insulating substrate 1 is deposited from around the recess 1a to the lower surface.

The metallized wiring layer 5 is formed by depositing a metal such as nickel and gold, which has excellent corrosion resistance and has a good wettability with a brazing material, on the exposed surface by plating to a thickness of 1.0 to 20.0 μm. The metallized wiring layer 5 can be effectively prevented from being oxidized and corroded.
And bonding wire 6 and metallized wiring layer
It is possible to firmly attach the external lead terminal to 5. Therefore, the oxidation corrosion of the metallized wiring layer 5 is prevented,
To strengthen the attachment of the metallized wiring layer 5 to the bonding wires 6 and the external lead terminals 7, the metallized wiring layer
It is preferable to deposit nickel, gold or the like on the exposed surface of layer 5 in a thickness of 1.0 to 20.0 μm.

The external lead terminals 7 attached to the metallized wiring layer 5 via a brazing material such as silver braze are metal materials such as Kovar metal (iron-nickel-cobalt alloy) and 42 alloy (iron-nickel alloy). Consisting of an external lead terminal
Each electrode of the semiconductor element 3 housed in the recess 1a of the insulating substrate 1 by connecting 7 to the external electric circuit is electrically connected to the external electric circuit via the metallized wiring layer 5 and the external lead terminal 7. It will be.

The external lead terminal 7 is formed in a predetermined shape by adopting a conventionally known metal working method such as a rolling working method or a punching working method for an ingot (lump) of Kovar metal or the like.

Further, when the external lead terminal 7 is formed by depositing a metal such as nickel or gold, which has excellent corrosion resistance and has good wettability with the brazing material, to a thickness of 1.0 to 20.0 μm by plating. Oxidation and corrosion of the external lead terminals 7 can be effectively prevented, and the external lead terminals 7 can be firmly connected to an external electric circuit via a brazing material such as solder. Therefore, it is preferable that the exposed surface of the external lead terminal 7 is layered with nickel, gold or the like in a thickness of 1.0 to 20.0 μm.

The insulating substrate 1 also has on its upper surface a connection pad 5a connected to the power supply electrode and the ground electrode of the semiconductor element 3 housed therein, and the connection pad 5a is formed as shown in FIG. The capacitive element 8 is attached with solder or a conductive resin with a plate member 9 made of an aluminum oxide sintered body sandwiched therebetween.

The connection pad 5a serves as an insulating base for the capacitive element 8.
1 It acts as a base member for attachment to the upper surface and also acts to connect the capacitive element 8 between the power supply electrode and the ground electrode of the semiconductor element 3, and is made of a refractory metal powder such as tungsten, molybdenum, or manganese. Has been done.

The connection pad 5a is a metallized wiring layer.
A predetermined shape is formed on the upper surface of the insulating substrate 1 by the same method as in 5.

The capacitive element 8 attached to the connection pad 5a is formed, for example, by embedding a large number of counter electrodes in a barium titanate porcelain, and the capacitive element 8 is a supply source that causes a malfunction of the semiconductor element 3. It acts to eliminate power supply noise caused by fluctuations in the power supply voltage, which allows the semiconductor element 3
Is protected from the adverse effects of power supply noise and can operate normally and stably for a long period of time.

A thermal expansion coefficient (4 to 5) of the insulating base 1 is further provided between the connection pad 5a provided on the insulating base 1 and the capacitive element 8.
× 10 ^-6 / ℃) and the thermal expansion coefficient of the capacitive element 8 (10 ~ 11 × 10 ^-6
/ ° C), a plate member 9 made of an aluminum oxide sintered body having an intermediate coefficient of thermal expansion (7 × 10 ^-6 / ° C) is interposed, and the plate member 9 is an insulating substrate 1 and a capacitive element. 8 and 8 has the effect of alleviating the thermal stress caused by the difference in the thermal expansion coefficient between the two, and by this, the capacitive element 8 is firmly attached to the insulating substrate 1, and the capacitive element 8 As a result, the adverse effect of power supply noise on the semiconductor element 3 is effectively prevented.

The plate member 9 is made of aluminum oxide (Al ₂ O
₃ ), silica (SiO ₂ ), calcia (CaO), magnesia (M
(gO) etc. a suitable organic solvent, a solvent is added and mixed to prepare a raw material powder, and then the raw material powder is filled in a predetermined mold and pressed at a constant pressure to form a green body, and thereafter, It is manufactured by firing the green body at a temperature of about 1600 ° C.

Further, the plate member 9 made of the aluminum oxide sintered body is covered with a metallized metal layer 9a from the upper surface to the lower surface thereof, and the metallized metal layer 9a connects each electrode of the capacitor element 8 to the semiconductor element 3 It serves to electrically connect to the connection pad 5a to which the power supply electrode and the ground electrode are connected.

The metallized metal layer 9a of the plate member 9 is made of tungsten, molybdenum or the like, and a metal paste obtained by adding and mixing a powder of tungsten or the like with an appropriate organic solvent or solvent is used as the plate member 9. It is applied from the upper surface to the lower surface of the plate member 9 by applying it in a predetermined shape in advance.

Further, the capacitive element on the insulating substrate 1 with the plate member 9 made of the aluminum oxide sintered body interposed therebetween
8 is attached by a plate member on the connection pad 5a provided on the insulating substrate 1.
9 and the capacitive element 8 are placed one after another with solder or a conductive adhesive sandwiched between them, and then the connection pad 5a and the plate member.
9 and the plate member 9 and the capacitive element 8 are sandwiched between the solder and the conductive adhesive by heating, melting, or thermosetting. In this case, since the thermal expansion coefficient of the plate member 9 is an intermediate value between the thermal expansion coefficient of the aluminum nitride sintered body 1 to which the connection pad 5a is adhered and the thermal expansion coefficient of the capacitor element 8, No large thermal stress is generated between the plate member 9 and between the plate member 9 and the capacitive element 8, and as a result, the capacitive element 9 is extremely firmly attached to the connection pad 5a of the insulating base 1. Is possible.

Thus, according to the semiconductor element housing package of the present invention, the semiconductor element 3 is adhered and fixed to the bottom surface of the concave portion 1a of the insulating substrate 1 through an adhesive such as glass, resin, or brazing material, and each electrode of the semiconductor element 3 is attached. Are electrically connected to the metallized wiring layer 5 via bonding wires 6, and then the lid 2 is bonded to the upper surface of the insulating substrate 1 via a sealing material made of glass, resin, brazing material, etc. Base 1 and lid
A semiconductor device as a product is completed by hermetically housing the semiconductor element 3 in a container 4 composed of 2 and.

The present invention is not limited to the above-mentioned embodiments, and various modifications can be made without departing from the gist of the present invention.

[0032]

According to the package for accommodating semiconductor elements of the present invention, since the insulating container is made of the aluminum nitride sintered material, the heat generated during the operation of the semiconductor element is radiated well into the atmosphere through the container, As a result, the temperature of the semiconductor element housed inside the container is always low, and the semiconductor element can be operated normally and stably for a long period of time.

Further, the capacitive element is interposed between the connection pads provided in the insulating container, and the plate member made of an aluminum oxide sintered body having a thermal expansion coefficient intermediate between the thermal expansion coefficient of the insulating container and the thermal expansion coefficient of the capacitive element is interposed therebetween. Since a large thermal stress is not generated between the insulating container and the capacitive element due to the attachment, the capacitive element is firmly attached to the insulating container, and the capacitive element supplies power to the semiconductor element. The adverse effects of noise are effectively prevented.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing an embodiment of a semiconductor element housing package of the present invention.

FIG. 2 is an enlarged cross-sectional view of a main part of the package shown in FIG.

FIG. 3 is a cross-sectional view of a conventional semiconductor element housing package.

[Explanation of symbols]

 1 ... Insulating substrate 2 ... Lid 3 ... Semiconductor element 4 ... Container 5 ... Metallized wiring layer 7 ... External lead terminal 8 ... Capacitance element 9 ... Plate member

Claims (1)

[Claims] 1. An insulating container made of an aluminum nitride sintered body having a cavity for housing a semiconductor element therein.
A package for storing a semiconductor element, which is formed by forming a connection pad connected to a power supply electrode and a ground electrode of a semiconductor element housed inside and attaching a capacitive element to the connection pad, the package being formed in the insulating container. A package for accommodating a semiconductor element, characterized in that a plate member made of an aluminum oxide sintered body is interposed between the connection pad and the capacitive element.