JPH08236576A - Semiconductor device - Google Patents

Abstract

PURPOSE: To attain a stable connection having low resistance and high bonding strength between a conductive bonding agent and the bonding surface by a method wherein the conductive bonding agent used for connecting a transparent electrode formed on a glass substrate to a protruding electrode formed on a semiconductor chip is dual layer structured. CONSTITUTION: In order to connect a transparent electrode formed on a glass substrate 2 to a protruding electrode 3 formed on a semiconductor chip 1, the transparent electrode 4 side with inferior electrical connection is coated with the first conductive agent 5 having an increased content of conductive particles to be cured, and then the front end of a protruding electrode 3 is coated with the second conductive bonding agent 6 with mobility imparting agent added thereto for making alignment of both elements to be connected and cured. Through these procedures, the stable connection giving low resistance and high strength between the conductive bonding agent and the connecting surface can be attained so that the gap between the semiconductor chip 1 and the glass substrate 2 may be widened by the dual layer structure, thereby enabling the influx capacity of a sealing resin to be increased.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure having a semiconductor device in which a protruding electrode formed on a semiconductor chip and a transparent electrode formed on a glass substrate are connected by using a conductive adhesive.

[0002]

2. Description of the Related Art As an example of the prior art, a structure in which a protruding electrode formed on a semiconductor chip and a transparent electrode formed on a glass substrate are connected by using a conductive adhesive is shown in a sectional view of FIG.

A conductive adhesive 10 is applied on the element surface of the semiconductor chip 1 by a dipping method, a printing method, or the like to the tip of the projection electrode 3 whose entire surface is made of gold or copper and whose surface is made of gold by a plating method.

Next, the transparent electrode 4 formed on the glass substrate 2 by the sputtering method or the vacuum deposition method is aligned, the semiconductor chip 1 is connected, and heat treatment is performed to cure the conductive adhesive 10.

After the conductive adhesive 10 is cured, the sealing resin 7 is poured between the semiconductor chip 1 and the glass substrate 2,
Heat treatment is performed to cure the sealing resin 7.

[0006]

The projecting electrodes 3 formed on the semiconductor chip 1 are becoming more and more pins and finer in pitch. As the number of projecting electrodes 3 formed on the semiconductor chip 1 increases, the projecting electrodes 3 also become smaller, and the connection area is reduced when the transparent electrodes 4 formed on the glass substrate 2 and the conductive adhesive 10 are used for connection. By doing so, the connection resistance increases and the adhesive force also decreases.

When the connection resistance increases, the semiconductor chip 1
When the adhesive force is reduced due to the inability to drive normally, thermal stress occurs due to the difference in thermal expansion coefficient between the semiconductor chip 1 and the glass substrate 2, and the transparent adhesive formed on the conductive adhesive 10 and the glass substrate 2 is transparent. Peeling occurs at the interface with the electrode 4 or the interface between the protruding electrode 3 formed on the semiconductor chip 1 and the conductive adhesive.

Further, when the protruding electrode 3 becomes smaller, the protruding electrode 3 formed by plating grows isotropically, so that the height of the protruding electrode 3 also decreases, and the protruding electrode 3 formed on the semiconductor chip 1 and the glass substrate. When the transparent electrode 4 formed on the upper surface 2 is connected using the conductive adhesive 10, the gap between the semiconductor chip 1 and the glass substrate 2 becomes narrow.

If the gap between the semiconductor chip 1 and the glass substrate 2 becomes narrow, the flowability of the sealing resin 7 deteriorates, and it takes a lot of time to completely flow the sealing resin 7, or the sealing resin 7 is filled with the sealing resin 7. The filler contained for adjusting the coefficient of thermal expansion and viscosity is blocked around the semiconductor chip 1 and the original performance cannot be exhibited.

A transparent electrode 4 formed on the glass substrate 2,
The protruding electrode 3 formed on the semiconductor chip 1 and the conductive adhesive 1
When connecting by using 0, it is difficult to manufacture the conductive adhesive 10 having both low connection resistance and high adhesive force, and it is difficult to cope with the change of the connection surface.

For the above reasons, it is not possible to obtain a low resistance and stable connection between the transparent electrode 4 formed on the glass substrate 2 and the protruding electrode 3 formed on the semiconductor chip 1.

An object of the present invention is to provide a low resistance and an adhesive force between a conductive adhesive and a connection surface when connecting a protruding electrode formed on a semiconductor chip and a transparent electrode formed on a glass substrate by using a conductive adhesive. It is an object of the present invention to provide a semiconductor device capable of obtaining high and stable connection.

[0013]

In order to solve the above problems, the liquid crystal display device of the present invention adopts the structure described below.

According to the semiconductor device mounting structure of the present invention, the transparent electrode formed on the glass substrate, the protruding electrode formed on the semiconductor chip, the first conductive adhesive for connecting the transparent electrode and the protruding electrode, and the second conductive adhesive It has a conductive adhesive and a sealing resin.

[0015]

The conductive adhesive used for connecting the transparent electrode formed on the glass substrate and the projecting electrode formed on the semiconductor chip is formed into two layers, so that the conductive adhesive or the electrical adhesive having good adhesion to the connection surface can be formed. A conductive adhesive having good connection can be selected, the connection resistance can be reduced, and the adhesive force between the conductive adhesive and the connection surface can be improved.

[0016]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A mounting structure of a semiconductor chip 1 according to an embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view showing an embodiment of the present invention.

A transparent conductive electrode 4 is formed on a glass substrate 2 by a sputtering method or a vacuum deposition method, and a first conductive adhesive 5 is formed on the transparent electrode 4 by a printing method, a dripping method, a dipping method or the like. The structure has the second conductive adhesive 6 and the sealing resin 7 in the gap between the semiconductor chip 1 and the glass substrate 2.

With this structure, it is possible to select a conductive adhesive having a good adhesiveness to the connecting surface or a conductive adhesive having a good electrical connection, and it is possible to reduce the connection resistance and connect with the conductive adhesive. The adhesive force to the surface can be improved, and by using the conductive adhesive in two layers, the gap between the semiconductor chip and the glass substrate is widened and the inflow property of the sealing resin 7 is also improved.

As a specific example, the bump electrode 3 formed on the semiconductor chip 1 is entirely made of gold or the surface thereof is made of gold, and has good electrical connection with a conductive adhesive.
The transparent electrode 4 formed above has a poor electrical connection with the conductive adhesive. Therefore, the electrical connection with the transparent electrode 4 is improved by a method of increasing the content of conductive particles as the first conductive adhesive 5. Since the content of the conductive particles in the first conductive adhesive 5 is increased, the adhesive force with the transparent electrode 4 is reduced, but the conductive adhesive containing a flexibility-imparting agent is used as the second conductive adhesive 6. Then, the thermal stress due to the difference in thermal expansion coefficient between the semiconductor chip 1 and the glass substrate 2 is relaxed, and peeling from the connection surface is prevented.

The second conductive adhesive 6 is made of γ-mercaptopropyltrimethoxysilane or β for improving the adhesive strength.
-When using a conductive adhesive containing a silane-based coupling agent such as (3,4-epoxycyclohexyl) ethylmethoxysilane to improve flexibility, add a cardanol epoxidized product or polypropylene glycol diglycidyl ether Semiconductor chip 1 using adhesive
The thermal stress due to the difference in thermal expansion coefficient between the glass substrate 2 and the glass substrate 2 is relaxed, and peeling at the connection interface including the interface between the first conductive adhesive 5 and the second conductive adhesive 6 is prevented.

In order to reduce the connection resistance, the first conductive adhesive 5 is a conductive adhesive containing conductive particles such as silver and gold having good conductivity, or a conductive adhesive containing 70 to 90 wt% of conductive particles. An agent or an adhesive having a large volume shrinkage after curing is used.

Next, a method for forming the structure shown in FIG. 1 will be described with reference to the sectional views of FIGS.

First, as shown in FIG. 2, the transparent electrode 4 is formed on the glass substrate 2 by the sputtering method or the vacuum deposition method, and the first conductive adhesive 5 is applied to the semiconductor on the transparent electrode 4 by the printing method or the dripping method. It is applied to the connection portion with the protruding electrode 3 formed on the chip 1.

The dripping method uses a dispenser 8 on a transparent electrode 4 formed on a glass substrate 2 as shown in FIG.
The conductive adhesive 5 is applied.

Further, as shown in FIG. 4, the protruding electrode 3 is formed on the silicon substrate 9 by a plating method using a metal such as gold or copper, and the first conductive adhesive 5 is applied to the tip of the protruding electrode 3 by the dipping method or It is applied by a printing method, aligned with the transparent electrode 4 and connected.

Thereafter, as shown in FIG. 5, the silicon substrate 9 on which the protruding electrodes 3 are formed without curing the first conductive adhesive 5 is formed.
The first conductive adhesive 5 can be left on the transparent electrode 4 by removing.

By applying the first conductive adhesive 5 on the transparent electrode 4 formed on the glass substrate 2 by using the silicon substrate 9 on which the protruding electrodes 3 are formed, it is possible to make conductive even in the fine arrangement of the protruding electrodes 3. Adhesive can be applied.

The first conductive adhesive 5 applied on the transparent electrode 4 in the above description is first heat-treated and cured, and then the tip of the protruding electrode 3 formed on the semiconductor chip 1 is dipped by a dip method as shown in FIG. Or apply the second conductive adhesive 6 by printing,
Projection electrode 3 and glass substrate 2 formed on semiconductor chip 1
After being aligned with the transparent electrode 4 formed above, they are connected and cured by heat treatment.

As shown in FIG. 7, before the first conductive adhesive 5 is cured, the protruding electrode 3 formed on the semiconductor chip 1 is formed.
The second conductive adhesive 6 applied to the tip of the
Projection electrode 3 and glass substrate 2 formed on semiconductor chip 1
The first conductive adhesive 5 may be hardened by heat treatment by aligning and connecting the transparent electrode 4 formed above.

In addition to the above description, as a method of applying the conductive adhesive, as shown in FIG. 8, the first conductive adhesive 5 is applied on the transparent electrode 4 by a printing method or a dripping method, and heat treatment is applied to cure it. Then, the second conductive adhesive 6 is formed by a printing method or a dropping method.
May be applied.

Further, as shown in FIG. 9, the second conductive adhesive 6 applied to the tip of the protruding electrode 3 formed on the semiconductor chip 1 is heat-treated to be cured first, and then the second conductive adhesive is applied. The first conductive adhesive 5 may be applied to the tip of the agent 6 by a dipping method or a printing method.

Thereafter, as shown in FIG. 10, the sealing resin 7 is applied to the vicinity of the end portion of the semiconductor chip 1 by a dripping method, poured into the gap between the semiconductor chip 1 and the glass substrate 2 and cured by heat treatment.

[0033]

As is apparent from the above description, in the mounting structure of the semiconductor device according to the present invention, the protruding electrode formed on the semiconductor chip and the transparent electrode formed on the glass substrate are connected using a conductive adhesive. The first conductive adhesive and the second conductive adhesive
It is possible to select a conductive adhesive having good adhesiveness to the connecting surface or a conductive adhesive having good electrical connection by using two layers of the conductive adhesive of the above, and it is possible to select the conductive adhesive having a low resistance and the connecting surface. The adhesive strength is high and a stable connection can be obtained, and since the conductive adhesive has two layers, the gap between the semiconductor chip and the glass substrate is widened and the flowability of the sealing resin is improved.

[Brief description of drawings]

FIG. 1 is a sectional view showing a mounting structure of a semiconductor device according to an embodiment of the invention.

FIG. 2 is a cross-sectional view showing a manufacturing method for forming a mounting structure of a semiconductor device in an example of the present invention.

FIG. 3 is a cross-sectional view showing the manufacturing method for forming the mounting structure of the semiconductor device in the example of the present invention.

FIG. 4 is a cross-sectional view showing the manufacturing method for forming the mounting structure of the semiconductor device in the example of the present invention.

FIG. 5 is a cross-sectional view showing the manufacturing method for forming the mounting structure of the semiconductor device in the example of the present invention.

FIG. 6 is a cross-sectional view showing the manufacturing method for forming the mounting structure of the semiconductor device in the example of the present invention.

FIG. 7 is a cross-sectional view showing the manufacturing method for forming the mounting structure of the semiconductor device in the example of the present invention.

FIG. 8 is a cross-sectional view showing the manufacturing method for forming the mounting structure of the semiconductor device in the example of the present invention.

FIG. 9 is a cross-sectional view showing the manufacturing method for forming the mounting structure of the semiconductor device in the example of the present invention.

FIG. 10 is a cross-sectional view showing the manufacturing method for forming the mounting structure of the semiconductor device in the example of the present invention.

FIG. 11 is a cross-sectional view showing a mounting structure of a conventional semiconductor device.

[Explanation of symbols]

 1 Semiconductor Chip 2 Glass Substrate 3 Projection Electrode 4 Transparent Electrode 5 First Conductive Adhesive 6 Second Conductive Adhesive 7 Encapsulating Resin

Claims (2)

[Claims] 1. A transparent electrode formed on a glass substrate, a protruding electrode formed on a semiconductor chip, a first conductive adhesive applied to a transparent electrode connecting the transparent electrode and the protruding electrode, and a protruding electrode. A semiconductor device comprising a second conductive adhesive and a sealing resin in a gap between the semiconductor chip and the glass substrate. 2. A conductive adhesive having a conductive particle content of 70 to 90 wt% as the first conductive adhesive, and a cardanol epoxide or polypropylene glycol diglycidyl ether as the second conductive adhesive. The semiconductor device according to claim 1, further comprising a conductive adhesive to which a flexibility imparting agent is added.