JPH08236508A - Method and device for substrate processing - Google Patents

Abstract

PURPOSE: To provide a substrate processing method which is capable of controlling effectively a substrate temperature under processing and a substrate processing device in etching, film formation and baking process during the manufacture of a semiconductor device. CONSTITUTION: During the processing of a substrate 19 by generating plasma in a processing chamber 12 exhausted in a specified pressure, the substrate 19 is mechanically placed in contact with the surface of a support mount 17 whose surface is covered with an insulation film and placed under temperature control, thereby supporting the substrate 19 with the support mount 17 and interposing a heat transfer gas between the surface of the insulation film and the substrate 19. While heat transfer is being conducted between the support mount 17 and the substrate 19, plasma is generated in the chamber 12 and the substrate is processed with the plasma.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing method and a substrate processing apparatus for subjecting a substrate such as a semiconductor wafer to a film forming process such as dry etching or vapor deposition or sputtering.

[0002]

2. Description of the Related Art At present, in the manufacture of semiconductor devices, when vapor deposition or sputtering is performed as a film forming means,
In order to obtain a good film quality with appropriate reflectance, resistivity and hardness, it is necessary to effectively control the substrate temperature during baking of the substrate and during film formation. In particular, the grain size and reflectance are greatly affected by the substrate temperature. In addition, it is necessary to control the substrate temperature also when a resist pattern is formed on the film by exposure and development and the film is etched according to the resist pattern by dry etching. This is because by controlling the substrate temperature, it is possible to prevent thermal damage to the resist caused by the poor heat resistance of the resist and to etch a faithful pattern.

However, it is difficult to control the temperature of the substrate in a vacuum. This is because even if the temperature of the substrate is controlled to the same temperature as that of the temperature-controlled substrate support, the thermal contact between the substrate and the support is insufficient in vacuum.

Therefore, conventionally, the two of the substrate and the substrate support are provided.
In order to increase the thermal contact between the surfaces, a method has been proposed in which the substrate is mechanically pressed against the support base, or the substrate is attracted to the support base by electrostatic force.
However, even with such a method, a sufficient effect has not been obtained. That is, the thermal contact between the two surfaces of the solid is largely due to the gas molecules interposed between the two surfaces, and the heat exchange between the pure solids is about the above-mentioned pressing pressure as compared with the heat exchange between the gas molecules. It is so small that it can be ignored.

Therefore, there has been proposed a device for increasing thermal contact by interposing gas molecules between the substrate and the support, which is disclosed in JP-A-56-103442.

FIG. 6 shows the substrate temperature control unit of this apparatus.
The substrate 3 is supported by several clips 4 in close proximity to the support 5 via a spacer 9. A temperature control device 6 having a cooling or heating mechanism is provided on the support base 5. The processing chamber 1 is exhausted from the exhaust port 2.
At the same time, argon is introduced from the gas introduction port 7, and this gas enters the processing chamber 1 as a flow 8 between the temperature control device 6 and the substrate 3. At this time, the pressure in the space 10 between the substrate 3 and the temperature control device 6 is controlled to be 10 to 100 Pa, and the pressure in the processing chamber 1 is exhausted to be about 1 Pa.

Therefore, the temperature of the substrate 3 is controlled by the temperature control device 6 by the heat transfer of the intervening gas having a pressure of about 100 Pa.

[0008]

However, even in this type of device, the temperature control of the substrate 3 is not sufficient. For example, when controlling the temperature of a silicon substrate having a diameter of 100 mm and a thickness of 0.45 mm, the time constant becomes about 20 seconds. When dry etching with an applied power of 500 W is performed in such a situation, the temperature difference with the temperature controller is 130.
The temperature also reaches ° C, and the resist is thermally damaged. Therefore,
It is impossible to apply power of about 500 W or more. In addition, since the mechanism is also used as a processing gas by leaking the heat transfer gas, if you want to introduce a process gas other than the heat transfer gas into another flow path, eliminate the leakage of the heat transfer gas. I can't.

The present invention is directed to a substrate processing method and a substrate processing apparatus capable of effectively controlling the substrate temperature during the etching, film forming and baking processes during the manufacture of a semiconductor device so that good processing can be performed. The purpose is to provide.

[0010]

Means for Solving the Problems The inventors of the present invention have made the following efforts to solve the above problems and obtained the following findings. First, in order to reduce the temperature difference between the substrate and the support table and increase the response speed of the substrate temperature control, the amount of heat that flows between the substrate and the support table per unit time per unit temperature difference (hereinafter unit heat flow rate). It is necessary to increase. To increase the unit heat flow, it is necessary to increase the pressure and, at the same time, make the distance between the two surfaces equal to or less than the mean free path of the gas under the pressure.

The substrate temperature during processing changes with time according to the following equation. (1) Tw = (1-exp (-kt / C)) Qi / k + To where Tw is the substrate temperature, C is the heat capacity of the substrate, k is the unit heat flow rate, and Qi is given to the substrate per unit time during processing. Constant heat quantity, To is the temperature of the support, t is time, and t =
At 0, Tw = To.

Further, the temperature of the support is at a steady value To,
When the initial temperature Two ≠ To of the substrate, the following equation is obeyed. (2) Tw = (Two−To) exp (−kt / C) + To In any of the above cases, the response speed of the substrate temperature control depends only on the heat capacity C of the substrate and the unit heat flow rate k between the two surfaces. To do. The value of C is a value peculiar to the substrate. For example, the diameter is 100 m.
m, 0.45 mm thick silicon substrate is about 6.2 J.
It is K ~ ¹ . Therefore, in order to reduce the temperature difference between the substrate and the support and increase the response speed of the substrate temperature control, it is necessary to increase the unit heat flow rate.

By the way, FIG. 5 shows measured values showing how the unit heat flow rate changes when nitrogen is interposed between the two surfaces and the pressure thereof is changed. The substrate was covered with silicon and the surface was covered with thin silicon oxide, and polished aluminum was used as a supporting material. The surface is thoroughly cleaned and the diameter between the two surfaces is 100m.
A load of 1 kg per m was applied.

The curve is close to a straight line passing through the origin, which proves that under these conditions the heat transfer between purely solids is negligible. That is, even if there is mechanical contact between the two surfaces of the solid, most of the thermal contact is due to the gas interposed between the two surfaces. Further, it can be seen that if the pressure of the intervening gas is made larger than the value of 100 Pa in the conventional device, the unit heat flow rate increases.

The above measured values are based on the following theoretical formula. That is, the amount of heat “dQ / dt” that passes between the two surfaces per unit time complies with the following equation. (3) dQ / dt = k ₁ (Tw-To) p (e << λ) (4) dQ / dt = k ₂ (Tw-To) e (e >> λ) where k ₁ and k ₂ are constants. , Tw, and To are the temperatures of the substrate and the substrate support, respectively, e is the distance between the two surfaces, p is the pressure of the intervening gas, and λ is the mean free path under that pressure. This formula shows that "dQ / dt" is proportional to p under conditions where the pressure is low and the mean free path is sufficiently long, and that "dQ / dt" is proportional to e when the pressure is high and the mean free path is sufficiently short. Shows.

Therefore, the unit heat flow rate can be increased by increasing the pressure of the gas interposed between the two surfaces and by providing a mechanism for making the distance between the two surfaces equal to or less than the mean free path under the pressure.

In the conventional device, p is 1
Since it is about 00 Pa, the mean free path λ of Ar is about 50.
μm. Therefore, it is desirable to reduce the spacing to about 50 μm, but this is not possible with this device. That is, the central portion of the substrate 3 swells as indicated by reference numeral 11 in FIG. 6 due to the pressure difference of 100 Pa.
For example, in a silicon wafer having a diameter of 100 mm and a thickness of 0.45 mm, the bulge amount at the central portion reaches 150 μm due to the pressure difference of 100 Pa. Therefore, the average free path has already exceeded 50 μm, and the unit heat flow rate cannot be increased even if the pressure is further increased.

Based on such knowledge, the present invention is a substrate processing method for processing a substrate by generating plasma in a processing chamber evacuated to a predetermined pressure, the surface of which is covered with an insulating film. A step of supporting the substrate by the supporting table by mechanically bringing the substrate into contact with the insulating film surface of the temperature controlled supporting table by an electrostatic force; heat between the insulating film surface and the substrate; A step of interposing a gas for transmission, and a step of generating plasma in the processing chamber to process the substrate by the plasma, and between the insulating film surface and the substrate supported by the support table. The heat transfer gas interposed between the support base and the substrate is used to transfer heat.

Further, in the substrate processing method of processing a substrate in a processing chamber evacuated to a predetermined pressure, the substrate is almost entirely covered by an electrostatic force on the surface of the insulating film of a support having a surface coated with an insulating film. A step of supporting the substrate by the support table by mechanically contacting the substrate, and a step of interposing a heat transfer gas between the insulating film surface,
The heat transfer gas may transfer heat between the support and the substrate.

Further, there is provided a substrate processing apparatus for plasma-processing a substrate in a processing chamber evacuated to a predetermined pressure, wherein plasma generating means for generating plasma inside the processing chamber and a surface of the substrate are covered with an insulating film. It has a temperature controller inside,
A support for mounting the substrate on the surface covered with the insulating film,
An electrostatic force generation unit that generates an electrostatic force on the surface of the insulating film, and a gas supply unit that supplies a gas for heat transfer between the substrate placed on the support and the surface covered with the insulating film. , Mechanically bringing the substrate into contact with the surface of the insulating film by the electrostatic force generated by the electrostatic force generating means, and performing heat transfer between the support table and the substrate with the heat transfer gas. Is characterized by.

Further, in the substrate processing apparatus for processing a substrate in a processing chamber evacuated to a predetermined pressure, a support base for coating the surface with an insulating film and placing the substrate on the surface coated with the insulating film. And an electrostatic force generating means for generating an electrostatic force on the surface of the insulating film, and a gas supply means for supplying a gas for heat transfer between the substrate placed on the support and the surface covered with the insulating film. And mechanically contacting the substrate over substantially the entire surface of the insulating film by the electrostatic force generated by the electrostatic force generating means, and the support table and the substrate with the heat transfer gas. It is characterized by performing heat transfer between them.

[0022]

The substrate is attracted to the support by electrostatic force, and the substrate is mechanically contacted and supported on the surface of the insulating film of the support over almost the entire surface, and the surface of the substrate and the insulating film is supported. By supplying a gas for heat transfer between
The distance between the surface of the insulating film of the support and the two surfaces of the substrate can be made equal to or less than the mean free path under the supply pressure of the gas for heat transfer, and the temperature of the substrate can be effectively reduced. Can be controlled.

[0023]

Embodiments of the present invention will be described below with reference to the drawings. First, the principle of temperature control of a substrate, which is the essence of the embodiment, will be described with reference to FIG. A substrate temperature control device having a support base 17 for the substrate 19, a holding means 23 for holding the substrate 19, and a gas introducing means 52 for introducing a gas into a space 20 formed by the substrate 19 and the support base 17. In the above, a mechanism is provided for keeping the distance between the support table 17 and the substrate 19 to be equal to or less than the mean free path of the introduced gas under the pressure of the introduced gas. The substrate temperature can be effectively controlled.

An apparatus based on such a skeleton is basically a parallel plate type dry etching apparatus composed of a processing chamber 12, a lower electrode 17 and an upper electrode 16 each having a polished surface and a convex surface. In this embodiment, the lower electrode 17 serves as a support.

The processing chamber 12 is connected to a vacuum exhaust system (not shown) via an exhaust port 13. A reaction gas is introduced into the processing chamber 12 through the gas introduction port 24. Further, the processing chamber 12 is provided with an inlet / outlet 14 for taking in / out the substrate 20 at an appropriate position.

A high frequency power supply 25 is connected between the upper electrode 16 and the lower electrode 17. The lower electrode 17 is provided with a flow path 48 through which the liquid heat medium flows, a pump 42, and a temperature control device 43 for the liquid heat medium. In addition, the gas reservoir 26 for heat transfer gas is passed through the orifice 21 and the valve 15.
Is provided. A gas cylinder 44 is provided in the gas sump 26 via a flow rate adjusting valve 45, and a flow rate adjusting valve 4 is also provided.
A rotary pump 47 is connected via 6.

The substrate holding means 23 is made of an insulating material such as ceramic and has a ball screw 4 through a spring 39.
0 and the motor 41. An O-ring 18 is provided between the substrate 19 and the lower electrode 17, and the O-ring 18 is a space 2 formed by the substrate 19 and the lower electrode.
0 is sealed from the processing chamber 12.

In the above structure, the lower electrode 17 is kept at a constant temperature by circulating the liquid heat medium kept at an appropriate constant temperature. As a liquid heat medium, 20
Although water kept at ° C is used, a fluid other than temperature-controlled water may be used depending on the purpose. In addition, the lower electrode 17
May be temperature controlled using electrical resistance.

The substrate 19 includes a motor 41 and a ball screw 40.
It is pressed against the lower electrode 17 by the substrate holding means 23 that moves up and down by. At this time, the spring 39 is
Is configured to always hold down with a constant weight, that is, a mechanism that causes mechanical contact.

Further, the gas sump 26 is a flow control valve 4
5, 46, the gas cylinder 44, and the rotary pump 47 keep a constant pressure and are filled with the heat transfer gas. In the space 20, from the gas sump 26 to the orifice 2
A heat transfer gas is introduced via 1. That is, the gas introducing means is composed of the gas sump 26 and the orifice 21 serving as a gas introducing port.

Next, how the substrate temperature is controlled during processing in the above apparatus, helium is used as a heat transfer gas, and the substrate has a diameter of 100 mm and a thickness of 0.45.
A case of a silicon substrate of mm will be described as an example.

After the substrate 19 is placed, helium gas is introduced from the gas reservoir 26 at a pressure of about 700 Pa, which is one digit larger than that of the conventional example. When a gas having a pressure of 700 Pa is introduced, the center of the substrate 19 bulges to a convex shape of about 800 μm. Further, the amount of change w at a point located at a distance r from the center of the substrate in the radial direction complies with the following equation.

[0033]

[Equation 1]

Here, E and ν are the Young's modulus and Poisson's ratio of silicon, h and a are the thickness and radius of the substrate 19, respectively, and p is the gas pressure.

Therefore, the convex surface of the lower electrode 17 is preliminarily processed into a curved surface having a shape conforming to the above formula, or a curved surface having more bulge. At this time, since the substrate 19 is pressed by the substrate support 23, it deforms along the convex surface and has a stress.

At this time, the force exerted on the substrate 19 by the gas pressure is equal to or smaller than the stress possessed by the substrate 19, so that the substrate 19 does not generate a strain greater than the strain already possessed by the gas pressure, and the lower part It remains in mechanical contact along the electrode 17. The surface of the lower electrode 17 is polished to have a surface roughness of 6-S or less. Therefore, the distance between the two surfaces is kept sufficiently smaller than the mean free path of 30 μm of helium at 700 Pa over the entire surface.

Here, considering that the thermal contact between solids can be ignored, the thermal contact is uniform over the entire surface. Therefore, sufficient thermal contact is realized, and the unit heat flow rate can be sufficiently increased.

Further, in the above apparatus, an orifice 21 is provided as an introducing means for introducing the heat transfer gas into the space 20. The orifice 21 has a diameter of about 40 μm so that the conductance with respect to helium is about 1 × 10 ⁶ to ⁶ m ³ / sec. When the substrate 17 is not placed, the amount of gas flowing from the gas reservoir 26 into the processing chamber 12 having a pressure difference of 700 Pa through this orifice is about 7 × 10 ⁴ Pa · m ³ / sec. This is sufficiently small with respect to the reaction gas introduction amount of 8 × 10 ² Pa · m ³ / sec introduced from the reaction gas introduction port 24. Therefore, even if leakage occurs in the sealing between the space 20 and the processing chamber 12, the processing is not adversely affected, and the reliability of the temperature control mechanism according to the present embodiment is improved. Also, by attaching this orifice, the O-ring 1
It is possible to eliminate the sealing by 8, and at the same time, the valve 15 is unnecessary even when the substrate 19 is loaded and unloaded without breaking the vacuum of the processing chamber 12.

Here, after the substrate 19 is placed, the space 2
The time required for 0 to reach the same pressure as the gas sump 26 must be sufficiently short. When the volume of the space 20 is V, the conductance of the orifice is C, and the pressure in the gas reservoir 26 is Po, the pressure p of the space 20 follows the following equation.

(6) p = Po (1-exp (-Ct / V)) Since the space 20 is a cylinder having a thickness of 100 μm at the maximum, V = 7.8 × 10 to ⁷ m ³ Therefore, the time constant of the response of p is about 1 sec, which is a sufficiently fast response.

In the above apparatus configuration, 200 W-50
FIG. 2 shows a temperature rise curve of the substrate 19 which is heated by the amount of heat received from the plasma when a high frequency power of 0 W is applied.
Here, the time constant of the response speed is about 3 seconds, which shows a sufficiently good control characteristic. Further, the temperature difference with the lower electrode 17 is suppressed to 8 ° C and 20 ° C, respectively.

The heat resistant temperature of the resist is about 120 ° C.
Therefore, in this device, the additional high frequency power is 2.5K.
It means that it can be increased to W.

An embodiment of the present invention will be described with reference to FIG. In this embodiment, the substrate 1 using the attraction by electrostatic force disclosed in JP-B-57-44747 is used.
9 is supported, and the vapor in the liquid or solid 37 in the liquid / solid reservoir 27 is used as the heat transfer gas.

The device utilizing the attraction force due to static electricity has a mechanism capable of applying a DC voltage from a DC power supply 38 between the two insulated electrodes 33 and 36. Due to the attractive force of this static electricity, the substrate 19 is approximately 10 gcm over the entire surface.
It is sucked with a force of ~ ² and mechanical contact occurs with the insulating material 30 over the entire surface. At this time, the substrate 19 and the lower electrode 2
The space 20 formed between the insulating material 30 and the processing chamber 12
It is the same as the device described in the above skeleton in that an O-ring 18 for sealing and is provided and an orifice 21 is provided as a means for introducing gas into the space 20. In this embodiment, the insulating material 30 serves as a support.

Here, the liquid or solid is selected so that the vapor pressure of the gas or solid for generating the heat transfer gas is about 700 Pa when it is isothermal with the temperature-controlled lower electrode 29.

In this embodiment, since 1,1,2,2-tetrachloroethane is used as the heat transfer gas, the pressure is about 700 Pa at room temperature. Here, the liquid / solid used is not limited to 1,1,2,2-tetrachloroethane, but may be a liquid solid having another vapor pressure.

Since the mean free path at this time is 3 μm, the surface of the insulator 30 needs to be polished to 0.8 S or less. Further, by using a soft organic compound for the insulating material 30 and flexibly deforming along the shape of the lower surface of the substrate 19, the distance between the two surfaces can be made smaller than the mean free path.

At this time, the vaporized gas is present between the two surfaces that are mechanically in contact with each other, and the distance between the two surfaces is sufficiently smaller than the mean free path of 3 μm of the gas at this time.
As a result, the thermal contact between the two surfaces is sufficiently large, and the unit heat flow rate is also large.

Further, the space 20 is 700 in about 1 sec.
In order to achieve Pa, the orifices 1, 1, 2, 2-
Conductance of 1 × 10 for tetrachloroethane
The diameter is set to 90 μm so as to be about ⁶ m ³ / sec.

FIG. 4 shows a temperature rising curve of the substrate 19 in the above apparatus. This is an example when dry etching is performed by adding high-frequency power of 300 W. The time constant is 5 seconds, which is a sufficient value. Further, in this device, there is no need to control the gas flow and gas pressure of the heat transfer gas, and there is an advantage that the structure is simple.

The same effect can be expected by using the wafer temperature control device disclosed in Japanese Patent Laid-Open No. 56-131930 as a device for reducing the distance between the substrate 19 and the support.

Further, forming the support base or the surface of the support base from a soft organic compound is very effective in reducing the distance between the two surfaces.

The above two examples are examples in which the present invention is applied to a dry etching apparatus, but the same effect is expected when applied to a film forming apparatus such as sputtering or vapor deposition, or a substrate baking apparatus. It can be easily inferred that it can be applied to other vacuum devices that require substrate temperature control.

According to the above-described embodiment, the gas pressure interposed between the substrate and the support can be raised sufficiently, and the distance between the two surfaces can be made smaller than the mean free path of the gas at that gas pressure. Therefore, the unit time, unit area, and heat flow rate per unit temperature difference between two surfaces can be reduced from the conventional 50W ・ K ~ ¹・ m ~ ² to 250W ・
It can be improved to K ~ ¹ · m ~ ² . As a result, the temperature difference between the substrate and the support during processing and the time constant for substrate temperature control can be reduced to about one fifth of the conventional values.

Of course, the scope of the present invention is not limited to the above embodiments.

[0056]

According to the present invention, the substrate temperature during processing can be effectively controlled in etching, film formation, baking processing, etc. of a semiconductor device, and etching that is faithful to the resist pattern, or It is possible to perform film formation with good film quality or good baking.

[Brief description of drawings]

FIG. 1 is a vertical sectional view of a substrate processing apparatus according to the present invention.

FIG. 2 is a characteristic diagram showing a temperature rise curve of a substrate in the substrate processing apparatus shown in FIG.

FIG. 3 is a vertical sectional view showing another embodiment of the substrate processing apparatus according to the present invention.

4 is a characteristic diagram showing a temperature rise curve of a substrate in the substrate processing apparatus shown in FIG.

FIG. 5 is a characteristic diagram showing the relationship between the amount of heat flowing between two surfaces and the pressure of intervening gas.

FIG. 6 is a vertical sectional view of a conventional substrate temperature control device.

[Explanation of symbols]

1 ... Processing chamber, 3 ... Substrate, 4 ... Clip, 5 ... Support base, 6
... Temperature control device, 7 ... Gas inlet, 8 ... Flow, 9 ... Spacer, 10 ... Space, 12 ... Processing chamber, 17 ... Support base (lower electrode), 18 ... O ring, 19 ... Substrate, 20 ... Space, Two
1 ... Gas inlet (orifice) 23 ... Holding means, 26 ...
No gas, 27 ... No liquid solid.

Claims (13)

[Claims] 1. A substrate processing method for processing a substrate by generating plasma in a processing chamber evacuated to a predetermined pressure,
A step of supporting the substrate with the support by mechanically bringing the substrate into contact with the insulation film surface of a temperature-controlled support base by coating the surface with the insulation film, and the insulating film surface A step of interposing a gas for heat conduction between the substrate and the substrate, and a step of generating plasma in the processing chamber and treating the substrate with the plasma, the insulating film surface and the support base. 2. A substrate processing method, wherein heat transfer between the support and the substrate is performed by the heat transfer gas interposed between the substrate supported by and. 2. The substrate processing method according to claim 1, wherein the pressure of the gas for heat transfer interposed between the surface of the insulating film and the substrate is 700 Pa or more. 3. The step of treating the substrate is performed after the step of supporting the substrate with the support and the step of interposing a heat transfer gas between the insulating film surface and the substrate. The substrate processing method according to claim 1, wherein: 4. The substrate processing method according to claim 1, wherein the processing of the substrate is etching processing by plasma. 5. A substrate processing method for processing a substrate in a processing chamber evacuated to a predetermined pressure, wherein substantially the entire surface of the substrate is covered with an electrostatic force on the surface of the insulating film of a supporting base whose surface is coated with an insulating film. The step of supporting the substrate with the support table by mechanically contacting the substrate and the step of interposing a heat transfer gas between the insulating film surface and the heat transfer gas. A substrate processing method, wherein heat is transferred between a support and the substrate. 6. The substrate processing method according to claim 5, wherein the pressure of the heat transfer gas interposed between the surface of the insulating film and the substrate is 700 Pa or more. 7. The substrate processing method according to claim 5, wherein the support base is temperature-controlled. 8. A substrate processing apparatus for plasma-processing a substrate in a processing chamber evacuated to a predetermined pressure, wherein plasma generating means for generating plasma inside the processing chamber and a surface of the substrate are covered with an insulating film. A support having an internal temperature control unit for mounting a substrate on the surface covered with the insulating film, an electrostatic force generating unit for generating electrostatic force on the surface of the insulating film, and a substrate mounted on the supporting base. And a gas supply means for supplying a gas for heat transfer between the surface covered with the insulating film, and the substrate is mechanically attached to the surface of the insulating film by the electrostatic force generated by the electrostatic force generating means. Contact them,
A substrate processing apparatus, wherein heat transfer gas is used to transfer heat between the support and the substrate. 9. The substrate processing according to claim 8, wherein the gas supply means interposes the heat transfer gas at a pressure of 700 Pa or more between the surface of the insulating film and the substrate. apparatus. 10. The plasma generating means generates plasma on the entire surface of the substrate mechanically brought into contact with the surface of the insulating film by the electrostatic force generated by the electrostatic force generating means. 8. The substrate processing apparatus according to item 8. 11. The substrate processing apparatus according to claim 8, wherein the plasma generating means etches the substrate with plasma generated on the entire surface of the substrate. 12. A substrate processing apparatus for processing a substrate in a processing chamber evacuated to a predetermined pressure, the support base having a surface coated with an insulating film and placing the substrate on the surface coated with the insulating film. And an electrostatic force generating means for generating an electrostatic force on the surface of the insulating film, and a gas supply means for supplying a gas for heat transfer between the substrate placed on the support and the surface covered with the insulating film. The substrate is mechanically brought into contact with the surface of the insulating film over substantially the entire surface by the electrostatic force generated by the electrostatic force generating means, and the gas for heat transfer is used to separate the support base and the substrate. A substrate processing apparatus, characterized in that heat is transferred between them. 13. The substrate processing according to claim 12, wherein the gas supply means interposes the heat transfer gas at a pressure of 700 Pa or more between the surface of the insulating film and the substrate. apparatus.