JP2728381B2 - Substrate processing method and substrate processing apparatus - Google Patents

Description

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing method and a substrate processing for performing a film forming process such as dry etching or vapor deposition or sputtering on a substrate such as a semiconductor wafer. It concerns the device. 2. Description of the Related Art At present, in the manufacture of semiconductor devices, when vapor deposition or sputtering is performed as a film forming means, the particle size,
In order to obtain good film quality with appropriate reflectance, specific resistance and hardness, it is necessary to effectively control the substrate temperature during baking and during film formation of the substrate. In particular, the particle diameter and the reflectance are greatly affected by the substrate temperature. Also, when a resist pattern is formed on the film by exposure and development, and the film is etched according to the resist pattern by dry etching, it is necessary to control the substrate temperature. This is because by controlling the substrate temperature, it is possible to prevent the resist from being thermally damaged due to the poor heat resistance of the resist and to etch a faithful pattern. [0003] However, it is difficult to control the temperature of the substrate in a vacuum. This is because, even if the temperature of the substrate is controlled to the same temperature as the temperature-controlled substrate support, the thermal contact between the substrate and the support in a vacuum is not sufficient. [0004] Therefore, conventionally, a two-layer structure of a substrate and a substrate support table is required.
In order to increase the thermal contact between the surfaces, there have been proposed methods of mechanically pressing the substrate against the support, or attracting the substrate to the support by electrostatic force.
However, a sufficient effect has not been obtained by such a method. In other words, the thermal contact between two solid surfaces is largely due to gas molecules interposed between the two surfaces, and the exchange of heat between pure solids is less than the exchange of heat with gas molecules at the above pressing pressure. Because it is so small that it can be ignored. [0005] Therefore, a device for increasing thermal contact by interposing gas molecules between the substrate and the support has been proposed, which is disclosed in JP-A-56-103442. FIG. 6 shows a substrate temperature control section of this apparatus.
The substrate 3 is supported by several clips 4 so as to approach the support table 5 via a spacer 9. On the support 5, a temperature controller 6 having a cooling or heating mechanism is provided. The processing chamber 1 is exhausted from an exhaust port 2.
At the same time, argon is introduced from the gas inlet 7, and this gas enters the processing chamber 1 as shown by a flow 8 between the temperature control device 6 and the substrate 3. At this time, the pressure in the space 10 between the substrate 3 and the temperature controller 6 is controlled to be 10 to 100 Pa, and the pressure in the processing chamber 1 is exhausted to be about 1 Pa. Therefore, the temperature of the substrate 3 is controlled by the temperature control device 6 with the aid of heat transfer of the intervening gas having a pressure of about 100 Pa. However, in this type of apparatus,
The temperature control of the substrate 3 is not sufficient. For example, diameter 100
When performing temperature control of a silicon substrate having a thickness of 0.45 mm and a thickness of 0.45 mm, the time constant is about 20 seconds. In such a situation, if dry etching is performed at an applied voltage of 500 W, the temperature difference from the temperature control device becomes as high as 130 ° C., and the resist is thermally damaged, and good processing cannot be performed . The present invention provides a substrate processing method and a substrate processing apparatus capable of effectively controlling a substrate temperature during processing in etching, film formation, and baking processing during the manufacture of a semiconductor device, thereby performing good processing. The purpose is to provide. Means for Solving the Problems The present inventor has made intensive efforts to solve the above problems and has obtained the following knowledge. First, in order to reduce the temperature difference between the substrate and the support base and increase the response speed of the substrate temperature control, the amount of heat flowing per unit temperature difference between the substrate and the support base per unit time difference (hereinafter, the unit heat flow rate) Need to be increased. To increase the unit heat flow, it is necessary to increase the pressure while at the same time keeping the distance between the two surfaces below the mean free path of the gas under that pressure. The substrate temperature during processing varies with time according to the following equation: (1) Tw = (1-exp (-kt / C)) Qi / k + To where Tw is the substrate temperature, C is the heat capacity of the substrate, k is the unit heat flow, and Qi is given to the substrate per unit time during processing. Constant heat, To is the temperature of the support, t is time, t =
At 0, Tw = To. The temperature of the support is at a steady value To,
When the initial temperature of the substrate Two ≠ To, the following equation is satisfied. (2) Tw = (Two-To) exp (-kt / C) + To In any case, the response speed of the substrate temperature control depends only on the heat capacity C of the substrate and the unit heat flow k between the two surfaces. I do. The value of C is a value specific to the substrate, for example, 100 m in diameter.
m, about 6.2J · with a silicon substrate 0.45mm thick
K ~ ¹ . Therefore, in order to reduce the temperature difference between the substrate and the support and to increase the response speed of the substrate temperature control, it is necessary to increase the unit heat flow. FIG. 5 shows actual measured values showing how the unit heat flow changes when nitrogen is interposed between the two surfaces and the pressure is changed. The substrate was covered with silicon and the surface was covered with thin silicon oxide, and polished aluminum was used as a support material. The surface is thoroughly cleaned and the diameter between the two surfaces is 100m
A load of 1 kg per m was applied. The curve is close to a straight line passing through the origin, which proves that under these conditions heat transfer purely between solids is negligible. That is, even if there is mechanical contact between the two surfaces of the solid, most of the thermal contact is due to gas interposed between the two surfaces. Further, it can be seen that when the pressure of the intervening gas is made larger than the value of 100 Pa in the conventional apparatus, the unit heat flow rate increases. The above measured values are in accordance with the following theoretical formula. That is, the amount of heat “dQ / dt” that passes between two surfaces per unit time follows the following equation. (3) dQ / dt = k ₁ (Tw−To) p (e≪λ) (4) dQ / dt = k ₂ (Tw−To) e (e≫λ) where k ₁ and k ₂ are constants , Tw, and To are the temperatures of the substrate and the substrate support, e is the distance between the two surfaces, p is the pressure of the intervening gas, and λ is the mean free path under the pressure. This equation shows that, under the condition that the pressure is low and the mean free path is sufficiently long, “dQ / dt” is proportional to p, and that if the pressure is high and the mean free path is sufficiently short, “dQ / dt” is proportional to e. Is shown. Accordingly, the unit heat flow can be increased by providing a mechanism for increasing the pressure of the gas interposed between the two surfaces and reducing the distance between the two surfaces to about the mean free path under the pressure. By the way, in the conventional apparatus, p is 1
The mean free path λ of Ar is about 50
μm. Therefore, it is desirable to reduce the interval to about 50 μm, but this is not possible with this device. That is, the central portion of the substrate 3 expands as indicated by reference numeral 11 in FIG. 6 due to a pressure difference of 100 Pa.
For example, in the case of a silicon wafer having a diameter of 100 mm and a thickness of 0.45 mm, the bulge amount at the center reaches 150 μm due to a pressure difference of 100 Pa. Therefore, the heat flow exceeds the mean free path of 50 μm, and the unit heat flow cannot be increased even if the pressure is further increased. Based on such knowledge, the present invention provides a substrate processing method for processing a substrate in a processing chamber evacuated to a predetermined pressure, wherein the surface is covered with an insulating film and the temperature is controlled. Applying a voltage to the plurality of electrodes provided on the table to generate an electrostatic force on the surface of the insulating film; and causing the substrate to follow the surface of the insulating film by the generated electrostatic force.
A step of exhausting the gas for heat transfer from the side of the processing chamber is supplied to between the step of supporting said substrate in said support base by mechanical contact, and the insulating film surface and the substrate Te Treating the substrate , wherein in the step of treating the substrate , the substrate and the insulating film are mechanically contacted along the surface of the insulating film by the electrostatic force. The method is characterized in that the heat transfer gas is supplied between the support table and the substrate while the gas for heat conduction is supplied and leaked into the processing chamber. The present invention also relates to a substrate processing method for processing a substrate in a processing chamber evacuated to a predetermined pressure, wherein a voltage is applied to a plurality of electrodes provided on a support having a surface covered with an insulating film. a step of generating an electrostatic force to the surface of the steps of supporting said substrate in said support base by mechanical contact with the substrate with electrostatic force obtained by the generated along a said insulating layer, said insulating layer Supplying a gas for heat transfer between the surface and the substrate and exhausting the gas from the processing chamber side, and generating plasma on the substrate supported by the support in the processing chamber, and and a step of processing the substrate, the substrate and the insulating layer using the substrate in the step of processing the substrate by the plasma and along the surface of the insulating film by the electrostatic force in a state where the mechanical contact Between By supplying a gas for transmitting and performing heat transfer between the substrate and the support table while leaking into the interior of the processing chamber. The present invention also provides a substrate processing apparatus for processing a substrate in a processing chamber evacuated to a predetermined pressure, the apparatus having a temperature control unit inside the processing chamber, the surface being covered with an insulating film. A support for mounting a substrate on the surface covered with the insulating film, and a plurality of electrodes disposed on the support and insulated from each other, and applying a voltage to the plurality of electrodes to form the insulating film; An electrostatic force generating means for generating an electrostatic force on a surface; and a gas supply means for supplying a gas for heat transfer between the substrate mounted on the support and the surface coated with the insulating film; and along the substrate to the insulating film by electrostatic force generated on the insulator film surface by the force generating means
The support table and the substrate while supplying the gas for heat transfer between the substrate and the insulating film by the gas supply means in a state of being in mechanical contact with the substrate and allowing the gas to leak into the processing chamber. The processing of the substrate is performed while performing heat transfer during the process. Further, there is provided a substrate processing apparatus for performing plasma processing in a processing chamber evacuated to a predetermined pressure, comprising: plasma generating means for generating plasma in the processing chamber; A support for mounting the substrate on a surface covered with the insulating film and having a temperature control unit therein and having the temperature control unit, and a plurality of electrodes arranged on the support and insulated from each other; Means for generating electrostatic force on the surface of the insulating film by applying a voltage to the plurality of electrodes, and transferring heat between the substrate placed on the support and the surface covered with the insulating film. and a gas supply means for supplying a gas of use, the said said substrate by electrostatic force generated on the surface of the insulating film and along the surface of the insulating film in a state of being mechanically contacted by the electrostatic force generating means Gas supplier By supplying the gas for heat transfer between the substrate and the insulating film and leaking the gas into the processing chamber, the substrate is subjected to the plasma while performing heat transfer between the support and the substrate. The processing is performed by: The substrate is attracted by electrostatic force on the support table, and the substrate is mechanically contacted with the surface of the insulating film of the support table over substantially the entire surface thereof. By supplying a gas for heat transfer between the surface of the membrane and
The distance between the surface of the insulating film of the support and the two surfaces of the substrate can be made not more than about the mean free path under the supply pressure of the heat transfer gas, and the temperature of the substrate can be effectively reduced. Can be controlled. Embodiments of the present invention will be described below with reference to the drawings. First, the principle of controlling the temperature of the substrate, which is the gist of the embodiment, will be described with reference to FIG. A substrate temperature control device having a support 17 for the substrate 19, holding means 23 for holding the substrate 19, and gas introducing means 52 for introducing gas into a space 20 formed by the substrate 19 and the support 17. In the above, a mechanism is provided for reducing the distance between the support 17 and the substrate 19 to the mean free path of the gas under the pressure of the introduced gas. The substrate temperature can be effectively controlled. An apparatus based on such a framework is basically a parallel plate type dry etching apparatus comprising a processing chamber 12, a lower electrode 17 having a polished convex surface, and an upper electrode 16. In this embodiment, the lower electrode 17 serves as a support. The processing chamber 12 is connected to a vacuum exhaust system (not shown) through an exhaust port 13. A reaction gas is introduced into the processing chamber 12 through a gas inlet 24. Further, the processing chamber 12 is provided with an inlet / outlet 14 for taking the substrate 20 in and out of an appropriate position. A high-frequency power supply 25 is connected between the upper electrode 16 and the lower electrode 17. The lower electrode 17 is provided with a flow path 48 through which the liquid heat medium flows, a pump 42, and a temperature control device 43 for the liquid heat medium. Further, the gas reservoir 26 for the heat transfer gas is supplied through the orifice 21 and the valve 15.
Is provided. A gas cylinder 44 is connected to the gas sump 26 via a flow control valve 45, and a gas control valve 4.
6, a rotary pump 47 is connected. The holding means 23 for the substrate is made of an insulating material such as ceramics, and is provided with a ball screw 4 via a spring 39.
0 and the motor 41. An O-ring 18 is provided between the substrate 19 and the lower electrode 17, and the O-ring 18 is a space 2 formed by the substrate 19 and the lower electrode.
0 is sealed from the processing chamber 12. In the above configuration, the lower electrode 17 is maintained at a constant temperature by circulating a liquid heat medium maintained at an appropriate constant temperature. As a liquid heat carrier, 20
Although water kept at ° C. is used, a fluid other than water whose temperature is controlled may be used according to the purpose. Also, the lower electrode 17
May be controlled by using electric resistance. The substrate 19 comprises a motor 41 and a ball screw 40
Then, the substrate is pressed against the lower electrode 17 by the substrate holding means 23 which moves up and down. At this time, the spring 39 is
, With a constant load, i.e., a mechanism for generating mechanical contact. The gas sump 26 is provided with a flow control valve 4.
5, 46, a gas cylinder 44 and a rotary pump 47 always keep a constant pressure and are filled with a heat transfer gas. The space 20 contains a gas reservoir 26 and an orifice 2
A gas for heat transfer is introduced via 1. That is, the gas introduction means includes the gas reservoir 26 and the orifice 21 serving as a gas introduction port. Next, how the substrate temperature was controlled during the processing in the above-mentioned apparatus was examined by using helium as a heat transfer gas, a substrate having a diameter of 100 mm and a thickness of 0.45 mm.
The description will be made by taking the case of a silicon substrate of mm as an example. After the substrate 19 is placed, helium gas is introduced from a gas reservoir 26 having a pressure of about 700 Pa, which is one digit larger than that of the conventional example. When a gas having a pressure of 700 Pa is introduced, the center of the substrate 19 bulges at a height of about 800 μm. Further, the change amount w of the point located at a distance of r in the radial direction from the center of the substrate follows the following equation. [Mathematical formula-see original document] Here, E and v are the Young's modulus and Poisson's ratio of silicon, h and a are the thickness and radius of the substrate 19, respectively, and p is the gas pressure. Therefore, the convex surface of the lower electrode 17 is processed in advance into a curved surface having a shape according to the above equation or a curved surface which is larger than that. At this time, since the substrate 19 is pressed by the substrate support 23, it is deformed along the convex surface and has a stress. At this time, since the force applied to the substrate 19 by the gas pressure is equal to or smaller than the stress of the substrate 19, the substrate 19 does not generate a strain higher than the strain already existing by the gas pressure, and It remains in mechanical contact along the electrode 17. The surface of the lower electrode 17 is polished to a surface roughness of 6-S or less. Therefore, the distance between the two surfaces is kept sufficiently smaller than the average free path of helium at 700 Pa of 30 μm over the entire surface. Here, considering that purely thermal contact between solids can be neglected, thermal contact is uniform over the entire surface. Therefore, sufficient thermal contact is realized, and the unit heat flow can be sufficiently increased. In the above-mentioned apparatus, an orifice 21 is provided as an introduction means for introducing the heat transfer gas into the space 20. The diameter of the orifice 21 is about 40 μm so that the conductance with respect to helium is about 1 × 10 to ⁶ m ³ / sec. When the substrate 17 is not placed, the amount of gas flowing out of the gas reservoir 26 through the orifice into the processing chamber 12 having a pressure difference of 700 Pa is about 7 × 10 to ⁴ Pa · m ³ / sec. This is sufficiently smaller than the reaction gas introduction amount 8 × 10 to ² Pa · m ³ / sec introduced from the reaction gas introduction port 24. Therefore, even if the sealing between the space 20 and the processing chamber 12 is leaked, there is no adverse effect on the processing, and the reliability of the temperature control mechanism according to the present embodiment is improved. By attaching this orifice, the O-ring 1
The sealing by 8 can be eliminated, and at the same time, the valve 15 becomes unnecessary even when the substrate 19 is loaded and unloaded without breaking the vacuum of the processing chamber 12. Here, after the substrate 19 is placed, the space 2
The time required for 0 to reach the same pressure as the gas reservoir 26 must be sufficiently short. When the volume of the space 20 is V, the conductance of the orifice is C, and the pressure in the gas reservoir 26 is Po, the pressure p of the space 20 follows the following equation. (6) p = Po (1−exp (−Ct / V)) Here, since the space 20 is a cylinder having a thickness of at most 100 μm, V = 7.8 × 10 to ⁷ m ³ Therefore, the time constant of the response of p is about 1 sec, which is a sufficiently fast response. In the above device configuration, 200 W to 50 W
FIG. 2 shows a temperature rising curve of the substrate 19 which is heated by the amount of heat received from the plasma when the high-frequency power of 0 W is applied.
Here, the time constant of the response speed is about 3 seconds, which indicates a sufficiently good control characteristic. Further, the temperature difference with the lower electrode 17 is also kept at 8 ° C. and 20 ° C., respectively. The resist has a heat resistant temperature of about 120 ° C.
Therefore, in this device, the additional high-frequency power is 2.5 K
That is, it can be increased to W. An embodiment of the present invention will be described with reference to FIG. In this embodiment, the substrate 1 is formed by using electrostatic attraction disclosed in Japanese Patent Publication No. 57-47747.
9 and the use of the liquid in the liquid / solid sump 27 or the vapor of the solid 37 as the heat transfer gas. The device utilizing the attractive force of static electricity is composed of a plurality of (two in FIG. 3) electrodes 3 insulated from each other.
By applying DC voltages having different polarities from a DC power supply 38 between the substrate 19 and the electrodes 36, a closed circuit is formed between the substrate 19 and the two electrodes 33, 36, and the substrate 19 is electrostatically charged without forming plasma. Can be adsorbed. Therefore, the substrate 19 can be electrostatically attracted even in the baking step of the substrate 19 without using plasma. Due to the attraction force due to the static electricity, the substrate 19 has about 10 gc
It is sucked by a force of m ~ ² , and mechanical contact occurs with the insulating material 30 over the entire surface. At this time, an O-ring 18 for sealing the processing chamber 12 and the space 20 formed between the substrate 19 and the insulating material 30 on the lower electrode 29 is provided. An orifice 21 is provided as a means for introducing gas into the apparatus, which is the same as the apparatus described in the outline above. In the present embodiment, the insulating material 30 serves as a support. Here, a liquid or a solid is selected so that the vapor pressure of the gas or the solid that generates the heat transfer gas is approximately 700 Pa when the vapor pressure of the gas or the solid is isothermal with the temperature-controlled lower electrode 29. In this embodiment, since 1,1,2,2-tetrachloroethane is used as the heat transfer gas, the pressure is about 700 Pa at room temperature. Here, the liquid / solid used is not limited to 1,1,2,2-tetrachloroethane, and may be a liquid / solid having another vapor pressure. Since the mean free path at this time is 3 μm, the surface of the insulator 30 must be polished to 0.8S or less. Also, by using a soft organic compound for the insulating material 30 and flexibly deforming it along the shape of the lower surface of the substrate 19, the distance between the two surfaces can be made smaller than the mean free path. At this time, a vaporized gas is interposed between the two surfaces that are in mechanical contact with each other, and the distance between the two surfaces is sufficiently smaller than 3 μm, which is the mean free path of the gas at this time.
As a result, the thermal contact between the two surfaces is sufficiently large, and the unit heat flow is also large. In addition, the inside of the space 20 is 700
In order to obtain Pa, the 1,1,2,2-
Conductance to tetrachlorethane is 1 × 10
The diameter is set to 90 μm so as to be ~ ⁶ m ³ / sec. FIG. 4 shows a temperature rise curve of the substrate 19 in the above apparatus. This is an example of a case where dry etching is performed by applying a high-frequency power of 300 W. The time constant is 5 seconds, which is a sufficient value. Further, in this device, there is no need to control the gas flow and gas pressure of the heat transfer gas, and there is an advantage that the structure is simplified. A similar effect can be expected by using a wafer temperature control device disclosed in Japanese Patent Application Laid-Open No. 56-131930 as a device for reducing the distance between the substrate 19 and the support table. The use of the support or the surface of the support with a soft organic compound has a great effect in reducing the distance between the two surfaces. Although the above two examples are examples in which the present invention is applied to a dry etching apparatus, the same effect can be expected even if the present invention is applied to a film forming apparatus such as sputtering or vapor deposition or a substrate baking apparatus. It can easily be inferred that the present invention can be applied to other vacuum devices requiring substrate temperature control. According to the above embodiment, after the gas pressure between the substrate and the support is sufficiently increased, the distance between the two surfaces is made smaller than the mean free path of the gas at that gas pressure. The heat flow per unit time, unit area, and unit temperature difference between two surfaces can be reduced from the conventional 50 W · K to ¹ · m to ² to 250 W
・ It can be improved to K ~ ¹・ m ~ ² . As a result, the temperature difference between the substrate and the support during processing and the time constant for controlling the substrate temperature can be reduced to about one fifth of the conventional value. It goes without saying that the scope of the present invention is not limited to the above embodiments. According to the present invention, in etching, film formation, baking and the like of a semiconductor device, the substrate temperature during the processing can be effectively controlled, and the etching faithful to the resist pattern can be achieved. Either engraving, film formation with good film quality, or good baking can be performed.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a longitudinal sectional view of a substrate processing apparatus according to the present invention. FIG. 2 is a characteristic diagram showing a temperature rise curve of a substrate in the substrate processing apparatus shown in FIG. FIG. 4 is a vertical sectional view showing another embodiment of the substrate processing apparatus. FIG. 4 is a characteristic diagram showing a temperature rise curve of the substrate in the substrate processing apparatus shown in FIG. 3. FIG. 5 is a relation between the amount of heat flowing between two surfaces and the pressure of the interposed gas. FIG. 6 is a vertical cross-sectional view of a conventional substrate temperature control device. [Description of References] 1 ... Processing chamber, 3 ... Substrate, 4 ... Clip, 5 ... Support base, 6
... temperature control device, 7 ... gas inlet, 8 ... flow, 9 ... spacer, 10 ... space, 12 ... processing chamber, 17 ... support base (lower electrode), 18 ... O-ring, 19 ... substrate, 20 ... space, 2
DESCRIPTION OF SYMBOLS 1 ... Gas inlet (orifice) 23 ... Holding means, 26 ...
No gas, 27 ... No liquid solid.

   ────────────────────────────────────────────────── ─── Continuation of front page    (72) Inventor Susumu Aiuchi               292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa               Hitachi, Ltd., Production Technology Laboratory                (56) References JP-A-58-32410 (JP, A)                 JP-A-56-163272 (JP, A)                 58-77043 (JP, U)                 Tokiko Sho 57-44747 (JP, B2)

Claims (1)

(57) [Claims] A substrate processing method for processing a substrate in a processing chamber evacuated to a predetermined pressure, the method comprising applying a voltage to a plurality of electrodes provided on a temperature-controlled support base by covering the surface with an insulating film, and applying the voltage to the insulating film. the step of supporting said substrate in said support base on the surface of the step of generating an electrostatic force, by <br/> mechanically contacted by electrostatic force obtained by the generation and along the substrate to the insulator film surface A step of supplying a gas for heat transfer between the surface of the insulating film and the substrate and exhausting the gas from the processing chamber side, and a step of processing the substrate, the step of processing the substrate in a state where the substrate was the insulating film along a surface by mechanical contact with the electrostatic force, the processing chamber by supplying a gas for the thermal conduction between the substrate and the insulating film surface Heat transfer between the support and the substrate while allowing The substrate processing method characterized by Nau. 2. 2. The substrate processing method according to claim 1, wherein the pressure of the heat transfer gas interposed between the insulating film surface and the substrate is 700 Pa or more. 3. The step of performing the processing of the substrate is performed after a step of supporting the substrate with the support and a step of interposing a heat conduction gas between the insulating film surface and the substrate. 2. The substrate processing method according to 1. 4. A substrate processing method for processing a substrate in a processing chamber evacuated to a predetermined pressure, wherein a voltage is applied to a plurality of electrodes provided on a support having a surface covered with an insulating film to apply an electrostatic force to a surface of the insulating film. a step of generating a, the step of supporting said substrate in said support base by mechanical contact with the substrate with electrostatic force obtained by the generated along a said insulating layer, and the insulating film surface and the substrate Supplying a gas for heat transfer and exhausting the gas from the processing chamber side, and generating plasma on the substrate supported by the support table in the processing chamber, and processing the substrate with the plasma. And a process,
The gas for the heat transfer between the substrate and the insulating film in a state in which the substrate in the step of processing the substrate by the plasma was said and along a surface of the insulating film is mechanical contact with the electrostatic force A substrate processing method, wherein heat is transferred between the support and the substrate while being supplied and leaking into the processing chamber. 5. The substrate processing method according to claim 4, wherein the pressure of the heat transfer gas interposed between the insulating film surface and the substrate is 700 Pa or more. 6. The step of performing the processing of the substrate is performed after a step of supporting the substrate with the support and a step of interposing a heat transfer gas between the insulating film surface and the substrate. 5. The substrate processing method according to 4. 7. 5. The substrate processing method according to claim 4, wherein the processing of the substrate is an etching process using plasma. 8. A substrate processing apparatus for processing a substrate in a processing chamber evacuated to a predetermined pressure, wherein the processing chamber is inside the processing chamber, has a surface covered with an insulating film, and has a temperature control unit inside and is covered with the insulating film. A support on which the substrate is mounted on the surface, and a plurality of electrodes arranged on the support, the plurality of electrodes being insulated from each other, and applying a voltage to the plurality of electrodes to apply an electrostatic force to the surface of the insulating film. An electrostatic force generating means for generating, and a gas supply means for supplying a gas for heat transfer between the substrate placed on the support and the surface covered with the insulating film, wherein the electrostatic force generating means the gas for the heat transfer between the substrate and the insulating layer by the gas supply means said substrate in a state where said allowed along the insulating film is mechanically contacted by an electrostatic force generated on the insulator film surface Supply and leak into the processing chamber Substrate processing apparatus and performs processing of the substrate while performing heat transfer between the substrate and the support table. 9. 9. The substrate processing apparatus according to claim 8, wherein the gas supply means causes the heat transfer gas to be interposed between the insulating film and the substrate at a pressure of 700 Pa or more. 10. What is claimed is: 1. A substrate processing apparatus for performing plasma processing in a processing chamber evacuated to a predetermined pressure, comprising: a plasma generating unit configured to generate plasma inside the processing chamber; A support for mounting the substrate on a surface covered with the insulating film having a temperature control unit therein, and a plurality of electrodes arranged on the support and mutually insulated from each other; An electrostatic force generating means for generating an electrostatic force on the surface of the insulating film by applying a voltage to the surface of the insulating film; and supplying a gas for heat transfer between the substrate mounted on the support and the surface covered with the insulating film. Gas supply means, and the substrate is brought into mechanical contact with the substrate along the surface of the insulating film by the electrostatic force generated on the surface of the insulating film by the means for generating electrostatic force. Board and front Processing the substrate by the plasma while performing heat transfer between the support and the substrate while supplying the heat transfer gas between an insulating film and leaking the gas into the processing chamber; A substrate processing apparatus characterized by the above-mentioned. 11. The substrate processing apparatus according to claim 10, wherein the gas supply unit causes the gas for heat transfer to be interposed between the surface of the insulating film and the substrate at a pressure of 700 Pa or more. 12. 11. The substrate processing apparatus according to claim 10, wherein the plasma generation unit generates plasma over the entire surface of the substrate mechanically in contact with the insulating film surface by the electrostatic force generated by the static generation unit. apparatus. 13. The substrate processing apparatus according to claim 10, wherein the plasma generating unit performs an etching process on the substrate with plasma generated on an entire surface of the substrate.