JPH08233733A - Method and apparatus for detecting extent of residual cosmetic on skin - Google Patents
Method and apparatus for detecting extent of residual cosmetic on skinInfo
- Publication number
- JPH08233733A JPH08233733A JP3570595A JP3570595A JPH08233733A JP H08233733 A JPH08233733 A JP H08233733A JP 3570595 A JP3570595 A JP 3570595A JP 3570595 A JP3570595 A JP 3570595A JP H08233733 A JPH08233733 A JP H08233733A
- Authority
- JP
- Japan
- Prior art keywords
- absorbance
- light
- cosmetic
- skin
- residual amount
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は肌の化粧品残度を検出
するための新規な方法およびその装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a novel method and apparatus for detecting cosmetic residue on skin.
【０００２】[0002]
【従来の技術】従来から、美しい肌を保つためには、し
っかりと汚れを落とすことが大切であり、これを怠ると
肌荒れや吹き出物、くすみの原因になり、肌の老化を早
めることになることが知られている。ここで、汚れとし
ては、ホコリの付着、化粧品の残留などが挙げられる。
また、これらのうち、汚れがホコリの付着によるもので
ある場合には、水洗いや化粧石鹸により簡単に、かつ十
分に汚れを落とすことができる。2. Description of the Related Art Conventionally, in order to maintain beautiful skin, it is important to remove the dirt thoroughly. It has been known. Here, examples of dirt include dust adhesion and cosmetic residue.
Further, among these, when the dirt is caused by the adhesion of dust, the dirt can be easily and sufficiently removed by washing with water or toilet soap.
【０００３】しかし、汚れが化粧品によるものである場
合には、水洗いや化粧石鹸だけでは簡単には汚れを落と
すことができない。また、洗顔によりどの程度汚れが落
ちたかは個人の感覚に頼っている。However, when the stains are caused by cosmetics, the stains cannot be easily removed only by washing with water or toilet soap. Also, it depends on the individual's feeling how much the dirt is removed by washing the face.
【０００４】[0004]
【発明が解決しようとする課題】汚れが化粧品によるも
のである場合には、化粧品が各種の有機物質、無機物質
を含んでいるのであるから、美しい肌を保つためには化
粧品を完全に落とさなければならない。しかし、汚れが
どの程度落ちたかは個人の感覚に頼っているのであるか
ら、化粧品による汚れが完全に落ちたか否かを正確に判
断することができない。この結果、個人の感覚では汚れ
が完全に落ちていると判断できた場合であっても、化粧
品による汚れが残留していることがあり、このような場
合には、美しい肌を保つことができなくなってしまう。When stains are caused by cosmetics, the cosmetics contain various organic and inorganic substances. Therefore, in order to keep beautiful skin, the cosmetics must be completely removed. I have to. However, since how much the stain is removed depends on the individual's feeling, it is not possible to accurately determine whether the stain caused by the cosmetic has been completely removed. As a result, even if it can be judged from the individual's sense that the stains are completely removed, the stains caused by cosmetics may remain, and in such a case, it is possible to maintain beautiful skin. It's gone.
【０００５】[0005]
【発明の目的】この発明は上記の問題点に鑑みてなされ
たものであり、汚れの原因になる化粧品の残度を客観的
に検出することができる肌の化粧品残度検出方法および
その装置を提供することを目的としている。SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and provides a method and apparatus for detecting a cosmetic residue on a skin capable of objectively detecting the residue of a cosmetic product causing stains. It is intended to be provided.
【０００６】[0006]
【課題を解決するための手段】請求項１の肌の化粧品残
度検出方法は、肌に赤外光を照射し、反射される赤外光
のうち、素肌による吸光度が高い波長を有する第１光の
吸光度と、化粧品に含まれる物質による吸光度が高い波
長を有する第２光の吸光度とを検出し、両吸光度の割合
に基づいて肌の化粧品残度を検出する方法である。According to a first aspect of the present invention, there is provided a method for detecting a residual amount of cosmetics on a skin, which comprises irradiating the skin with infrared light and having a wavelength of infrared light reflected by the skin that has a high absorbance. It is a method of detecting the absorbance of light and the absorbance of the second light having a wavelength at which the substance contained in the cosmetic has a high absorbance, and detecting the residual amount of the cosmetic on the skin based on the ratio of the two absorbances.
【０００７】請求項２の肌の化粧品残度検出装置は、肌
に赤外光を照射する赤外光光源と、反射される赤外光の
うち、素肌による吸光度が高い波長を有する第１光の吸
光度と、化粧品に含まれる物質による吸光度が高い波長
を有する第２光の吸光度とを検出する吸光度検出手段
と、両吸光度の割合を算出し、算出結果に基づいて肌の
化粧品残度を検出する化粧品残度検出手段とを有してい
る。According to a second aspect of the present invention, there is provided an apparatus for detecting a residual amount of cosmetics for skin, wherein an infrared light source for irradiating the skin with infrared light and a first light having a wavelength of reflected infrared light having a high absorbance by the bare skin. And the absorbance detection means for detecting the absorbance of the second light having a wavelength at which the substance contained in the cosmetic has a high absorbance, and the ratio of the two absorbances is calculated, and the cosmetic residual amount of the skin is detected based on the calculation result. Cosmetic residual amount detecting means.
【０００８】ここで、第１光としては、皮膚組織による
吸収が顕著な波長の光であることが好ましく、第２波長
としては、化粧品中の無機質（例えばＳｉＯ2）による
吸収が顕著な波長の光であることが好ましい。Here, it is preferable that the first light has a wavelength having a significant absorption by the skin tissue, and the second wavelength has a wavelength having a significant absorption by an inorganic substance (eg, SiO 2 ) in the cosmetic product. It is preferably light.
【０００９】[0009]
【作用】請求項１の肌の化粧品残度検出装置であれば、
肌に赤外光を照射し、反射される赤外光のうち、素肌に
よる吸光度が高い波長を有する第１光の吸光度と、化粧
品に含まれる物質による吸光度が高い波長を有する第２
光の吸光度とを検出し、両吸光度の割合に基づいて肌の
化粧品残度（化粧品が残っている度合）を検出するので
あるから、従来は不可能であった化粧品残度の客観的な
検出を達成することができる。According to another aspect of the present invention, there is provided a cosmetic residual amount detecting device for skin.
Of the infrared light reflected by irradiating the skin with infrared light, the absorbance of the first light having a wavelength having a high absorbance by the bare skin and the second absorbance having a wavelength having a high absorbance by the substance contained in the cosmetic
It detects the absorbance of light and detects the residual amount of cosmetics on the skin (the amount of cosmetics remaining) based on the ratio of the two absorbances. Can be achieved.
【００１０】請求項２の肌の化粧品残度検出装置は、赤
外光光源により肌に赤外光を照射し、吸光度検出手段に
より、反射される赤外光のうち、素肌による吸光度が高
い波長を有する第１光の吸光度と、化粧品に含まれる物
質による吸光度が高い波長を有する第２光の吸光度とを
検出し、化粧品残度検出手段により、両吸光度の割合を
算出し、算出結果に基づいて肌の化粧品残度を検出す
る。したがって、従来は不可能であった化粧品残度の客
観的な検出を達成することができる。According to a second aspect of the present invention, there is provided a device for detecting a residual amount of cosmetics for skin, wherein an infrared light source irradiates the skin with infrared light, and the absorbance detecting means reflects infrared light at a wavelength having a high absorbance by bare skin. The absorbance of the first light having a value of 2 and the absorbance of the second light having a wavelength of which a substance contained in the cosmetic has a high absorbance are detected, and the ratio of the two absorbances is calculated by the cosmetic residual detection means, and based on the calculation result. To detect the cosmetic residue on the skin. Therefore, it is possible to achieve the objective detection of the residual amount of cosmetics, which has been impossible in the past.
【００１１】換言すれば、第１光の吸光度は化粧品残度
が少ないほど大きくなり、第２光の吸光度は化粧品残度
が多いほど高くなる、いわゆる相反関係にある。したが
って、第１光の吸光度と第２光の吸光度との割合を算出
することにより、肌の化粧品残度を高精度に、かつ客観
的に検出することができる。In other words, there is a so-called reciprocal relationship in which the absorbance of the first light increases as the cosmetic residual amount decreases, and the absorbance of the second light increases as the cosmetic residual amount increases. Therefore, by calculating the ratio of the absorbance of the first light and the absorbance of the second light, it is possible to objectively detect the cosmetic residue on the skin with high accuracy.
【００１２】[0012]
【実施例】以下、実施例を示す添付図面によってこの発
明を詳細に説明する。図１はこの発明の肌の化粧品残度
検出装置の一実施例を示す概略図である。この装置は、
顔２に対して赤外光を照射するための、タングステンフ
ィラメントなどからなる赤外光光源１と、顔２により反
射され、または散乱反射された赤外光に含まれる各種の
波長の光の中から、第１光または第２光のみを透過させ
るフィルタ（バンドパスフィルタ）３と、フィルタ３を
透過した光を断続光に変換するチョッパ４と、チョッパ
４から出力される断続光を受光するための、焦電素子か
らなる検出器５と、検出器５から出力される光強度を入
力として各光の吸光度を得る吸光度算出部６と、第１光
の吸光度から第２光の吸光度を減算して吸光度差を算出
し、この吸光度差を第１光の波長と第２光の波長との差
で除算して傾きに相当する値を得る傾き算出部７と、こ
の傾きに相当する値を化粧品残度に変換する変換部８と
を有している。ただし、顔２に代えて、手、首などに赤
外光を照射するようにしてもよい。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail below with reference to the accompanying drawings showing embodiments. FIG. 1 is a schematic view showing an embodiment of the cosmetic residual amount detecting apparatus for skin according to the present invention. This device
Infrared light source 1 made of a tungsten filament or the like for irradiating face 2 with infrared light, and light of various wavelengths contained in infrared light reflected or scattered by face 2 To receive only the first light or the second light, a chopper 4 for converting the light transmitted through the filter 3 into intermittent light, and to receive the intermittent light output from the chopper 4. Of the pyroelectric element, the absorbance calculator 6 that obtains the absorbance of each light with the light intensity output from the detector 5 as an input, and the absorbance of the second light is subtracted from the absorbance of the first light. Calculating a difference in absorbance and dividing the difference in absorbance by the difference between the wavelength of the first light and the wavelength of the second light to obtain a value corresponding to the gradient; and a value corresponding to the gradient for cosmetics. It has the conversion part 8 which converts into a residual. However, instead of the face 2, the hands, neck, etc. may be irradiated with infrared light.
【００１３】なお、第１光として、皮膚組織、タンパク
質・アミノ酸による吸収が顕著な波長の光（例えば、波
長が６．１μｍ近傍、または波長が６．５μｍ近傍の
光）を採用し、第２光として、ＳｉＯ2による吸収が顕
著な波長の光（例えば、波長が１０．２μｍ近傍の光）
を採用している。ここで、ＳｉＯ2は、カオリン、タル
ク類として殆どの化粧品に含まれているのであるから、
第２光をこのように設定することにより、どのような化
粧品にも対処できる。また、フィルタ３、チョッパ４、
および検出器５は、第１光、第２光のそれぞれに対応さ
せて設けているが、図１には１系統分だけを示してい
る。または、フィルタ３を第１光及び第２光のみ通す様
に切り替えることで、１系統のみで構成することも可能
である。さらに、吸光度算出部６は、例えば、赤外光光
源１から出射される各光の強度に対する、対応する検出
器５による検出信号の割合を算出することにより吸光度
を得るものであり、好ましくは、該当する場合に、上記
各波長近傍におけるピーク値を吸光度として得る。さら
にまた、変換部８は、例えば、複数の化粧品残度に対応
させて、傾きに相当する値を予め得て保持しているもの
であり、傾き算出部７により得られた値と保持している
値とに基づいて化粧品残度を得て出力する。As the first light, light having a wavelength that is significantly absorbed by skin tissue, proteins and amino acids (for example, light having a wavelength near 6.1 μm or wavelength near 6.5 μm) is adopted. As light, light having a wavelength that is significantly absorbed by SiO 2 (for example, light having a wavelength near 10.2 μm)
Has been adopted. Here, since SiO 2 is contained in most cosmetics as kaolin and talc,
By setting the second light in this way, any cosmetic product can be dealt with. In addition, the filter 3, the chopper 4,
The detectors 5 and the detectors 5 are provided corresponding to the first light and the second light respectively, but only one system is shown in FIG. Alternatively, the filter 3 may be switched to pass only the first light and the second light, so that it is possible to configure only one system. Furthermore, the absorbance calculator 6 obtains the absorbance by calculating the ratio of the detection signal from the corresponding detector 5 to the intensity of each light emitted from the infrared light source 1, and preferably, When applicable, the peak value in the vicinity of each wavelength is obtained as the absorbance. Furthermore, the conversion unit 8 obtains and holds a value corresponding to the inclination in advance in association with a plurality of cosmetic residual levels, and holds the value obtained by the inclination calculation unit 7 as the value. Based on the existing value, the cosmetic residual amount is obtained and output.
【００１４】また、図１には顔２からの反射光をフィル
タ３に導くためのミラー９が設けられているが、ミラー
９を省略してもよいことはもちろんである。上記の構成
の化粧品残度検出装置を用いて顔の化粧品残度を検出す
る場合には、第１光の吸光度および第２光の吸光度から
傾きに相当する値を算出することにより、正確、かつ客
観的な化粧品残度を検出することができる。Further, although the mirror 9 for guiding the reflected light from the face 2 to the filter 3 is provided in FIG. 1, it goes without saying that the mirror 9 may be omitted. When detecting the cosmetic residual amount on the face using the cosmetic residual amount detecting device having the above-mentioned configuration, by calculating a value corresponding to the inclination from the absorbance of the first light and the absorbance of the second light, It is possible to detect an objective cosmetic residual amount.
【００１５】換言すれば、化粧品残度が大きい場合に
は、第２光の吸光度が化粧品の残度に応じて大きくな
り、第１光の吸光度が化粧品の残度に応じて小さくな
る。逆に、化粧品残度が小さい場合には、化粧品が殆ど
残留していないのであるから、第２光の吸光度が小さく
なり、第１光の吸光度が大きくなる。即ち、第１光の吸
光度と第２光の吸光度とは、化粧品の残度に応じて変化
するだけでなく、互いに相反的に変化するのであるか
ら、傾きに相当する値の化粧品残度に対する変化割合を
大きくすることができる。したがって、何れか一方の光
の吸光度のみに基づいて化粧品残度を検出しようとする
場合には、個人差、化粧品の組成差などによるばらつき
の影響を大きく受けてしまうのであるが、この実施例で
は、両光の吸光度に基づいて化粧品残度を検出している
のであるから、個人差、化粧品の組成差などによるばら
つきの影響を抑制することができ、この結果、化粧品残
度の検出精度を高めることができる。In other words, when the residual amount of the cosmetic is large, the absorbance of the second light increases according to the residual amount of the cosmetic, and the absorbance of the first light decreases according to the residual amount of the cosmetic. On the contrary, when the residual amount of the cosmetic is small, the cosmetic hardly remains, so that the absorbance of the second light becomes small and the absorbance of the first light becomes large. That is, since the absorbance of the first light and the absorbance of the second light not only change according to the residual amount of the cosmetic product but also reciprocally change each other, the change in the value corresponding to the inclination with respect to the residual amount of the cosmetic product. The ratio can be increased. Therefore, when trying to detect the cosmetic residual amount based only on the absorbance of one of the light, it is greatly affected by variations due to individual differences, cosmetic composition differences, etc. Since the cosmetic residual amount is detected based on the absorbance of both lights, it is possible to suppress the influence of variations due to individual differences, cosmetic composition differences, etc., and as a result, increase the cosmetic residual detection accuracy. be able to.
【００１６】なお、上記実施例においては、フィルタ３
により第１光、第２光のみを検出器５に導くようにして
いるが、フィルタ３を省略して、所定の波長範囲に含ま
れる全ての光を検出器（分光検出器）により検出し、検
出結果の中から、第１光、第２光に対応する検出信号の
みを抽出するようにしてもよい。もちろん、焦電素子以
外の検出器を採用することも可能である。In the above embodiment, the filter 3
Therefore, only the first light and the second light are guided to the detector 5, but the filter 3 is omitted and all the light included in the predetermined wavelength range is detected by the detector (spectral detector). From the detection results, only the detection signals corresponding to the first light and the second light may be extracted. Of course, it is also possible to employ a detector other than the pyroelectric element.
【００１７】図２から図４は素肌から化粧を全く落とし
ていない肌までに対応する吸光度を示す図である。な
お、何れの図においても、Ａ１で示す円で囲んだ部分が
６．１μｍ近傍の波長を有する第１光の吸光度を示し、
Ａ２で示す円で囲んだ部分が６．５μｍ近傍の波長を有
する第１光の吸光度を示し、Ｂ１で示す円で囲んだ部分
が１０．２μｍ近傍の波長の第２光の吸光度を示してい
る。また、これらの図の縦軸は吸光度であり、横軸は波
長を示すカイザー（波数）である。FIGS. 2 to 4 are graphs showing the absorbance corresponding to the bare skin to the skin without any makeup applied. In any of the figures, the circled portion indicated by A1 indicates the absorbance of the first light having a wavelength near 6.1 μm,
The circled portion indicated by A2 indicates the absorbance of the first light having a wavelength near 6.5 μm, and the circled portion indicated by B1 indicates the absorbance of the second light having a wavelength near 10.2 μm. . The vertical axis of these figures is the absorbance, and the horizontal axis is the Kaiser (wave number) indicating the wavelength.
【００１８】図２は、第１光の吸光度と第２光の吸光度
とを結ぶ線分の傾きが負であるのに対して、図３は、同
じ線分の傾きがほぼ０であり、図４は同じ線分の傾きが
正である。したがって、例えば、上記線分の傾きがほぼ
０または正の場合に、洗顔が不十分である（化粧品残度
が十分には小さくなっていない）と判定し、それ以外の
場合に洗顔が十分に行われていると判定することができ
る。In FIG. 2, the slope of the line segment connecting the absorbance of the first light and the absorbance of the second light is negative, whereas in FIG. 3, the slope of the same line segment is almost 0. In No. 4, the slope of the same line segment is positive. Therefore, for example, when the slope of the line segment is almost 0 or positive, it is determined that the face washing is insufficient (the residual cosmetic amount is not sufficiently small), and in other cases, the face washing is sufficiently performed. It can be determined that it is performed.
【００１９】また、図５はカオリンの吸光度を示す図、
図６はタルクの吸光度を示す図である。両図から明らか
なように、第１光に対するカオリン、タルクの吸光度は
著しく小さいのであるから、第１光の吸光度により肌の
影響を検出することができ、第２光の吸光度により化粧
品の影響を検出することができる。この結果、図２から
図４に示すように、化粧品による汚れがほぼ完全に落と
された状態、化粧品による汚れが殆ど落とされていない
状態、これらの中間の状態にそれぞれ対応して上記線分
の傾きが変化し、この傾きの変化を検出することによ
り、化粧品の残度を正確に、かつ客観的に検出すること
ができる。FIG. 5 is a diagram showing the absorbance of kaolin,
FIG. 6 is a diagram showing the absorbance of talc. As is clear from both figures, since the absorbance of kaolin and talc for the first light is extremely small, the influence of the skin can be detected by the absorbance of the first light, and the influence of cosmetics can be detected by the absorbance of the second light. Can be detected. As a result, as shown in FIG. 2 to FIG. 4, the line segments corresponding to the state where the cosmetic stain is almost completely removed, the state where the cosmetic stain is hardly removed, and an intermediate state between these, The inclination changes, and by detecting the change in the inclination, it is possible to accurately and objectively detect the residual amount of the cosmetic product.
【００２０】また、図５、図６において負の吸光度が示
されているのは、光を当てたときの試料の角度、測定の
仕方、ベースラインの設定などに起因するものであり、
分光分析を行う場合によく見られる現象である。ただ
し、実際に入射光量よりも反射光量が多くなることを意
味しているのではない。また、このように局部的に負の
吸光度が検出されても、第１光の吸光度と第２光の吸光
度とによる傾きにより化粧品残度を検出しているので、
特に不都合はない。The negative absorbances shown in FIGS. 5 and 6 are due to the angle of the sample when exposed to light, the method of measurement, the setting of the baseline, etc.
This is a phenomenon often seen when performing spectroscopic analysis. However, this does not mean that the reflected light amount actually becomes larger than the incident light amount. Further, even if the negative absorbance is locally detected in this way, the cosmetic residual amount is detected by the inclination of the absorbance of the first light and the absorbance of the second light.
There is no particular inconvenience.
【００２１】なお、上記実施例においてはＡ１とＢ１、
またはＡ２とＢ１に基づいて化粧品残度を検出するよう
にしているが、Ａ１とＡ２とＢ１とに基づいて（例え
ば、Ａ１とＡ２の平均値とＢ１との傾きに基づいて）化
粧品残度を検出するようにしてもよい。In the above embodiment, A1 and B1,
Alternatively, the cosmetic residual amount is detected based on A2 and B1, but the cosmetic residual amount is detected based on A1, A2, and B1 (for example, based on the average value of A1 and A2 and the slope of B1). You may make it detect.
【００２２】[0022]
【発明の効果】請求項１の発明は、従来は不可能であっ
た化粧品残度の客観的な検出を達成することができると
いう特有の効果を奏する。請求項２の発明は、従来は不
可能であった化粧品残度の客観的な検出を達成すること
ができるという特有の効果を奏する。The invention of claim 1 has a unique effect that it is possible to objectively detect the residual amount of cosmetics, which has been impossible in the past. The invention of claim 2 has a peculiar effect that it is possible to achieve objective detection of the residual amount of cosmetics, which has been impossible in the past.
【図１】この発明の肌の化粧品残度検出装置の一実施例
を示す概略図である。FIG. 1 is a schematic view showing an embodiment of a cosmetic cosmetic residue detection device of the present invention.
【図２】化粧品残度が著しく小さい状態における吸光度
を示す図である。FIG. 2 is a diagram showing the absorbance in a state where the cosmetic residual amount is extremely small.
【図３】化粧品残度がある程度ある場合の吸光度を示す
図である。FIG. 3 is a diagram showing the absorbance when there is a cosmetic residual amount to some extent.
【図４】化粧品残度が大きい場合の吸光度を示す図であ
る。FIG. 4 is a diagram showing the absorbance when the cosmetic residual amount is large.
【図５】カオリンの吸光度を示す図である。FIG. 5 is a diagram showing the absorbance of kaolin.
【図６】タルクの吸光度を示す図である。FIG. 6 is a diagram showing the absorbance of talc.
１ 赤外光光源 ２ 顔 ３ フィルタ ４ チョッパ ５ 検出器 ６ 吸光度算出部 ７ 傾き算出部 ８ 変換部 1 infrared light source 2 face 3 filter 4 chopper 5 detector 6 absorbance calculator 7 slope calculator 8 converter
Claims (2)
のうち、素肌による吸光度が高い波長を有する第１光の
吸光度と、化粧品に含まれる物質による吸光度が高い波
長を有する第２光の吸光度とを検出し、両吸光度の割合
に基づいて肌の化粧品残度を検出することを特徴とする
肌の化粧品残度検出方法。1. Irradiating the skin with infrared light, and of the infrared light reflected, the first light having a wavelength having a high absorbance by bare skin and the wavelength having a high absorbance by a substance contained in cosmetics. A method for detecting the residual amount of cosmetics on the skin, which comprises detecting the absorbance of the second light and detecting the residual amount of the cosmetics on the skin based on the ratio of the two absorbances.
（１）と、反射される赤外光のうち、素肌（２）による
吸光度が高い波長を有する第１光の吸光度と、化粧品に
含まれる物質による吸光度が高い波長を有する第２光の
吸光度とを検出する吸光度検出手段（３）（４）（５）
（６）と、両吸光度の割合を算出し、算出結果に基づい
て肌の化粧品残度を検出する化粧品残度検出手段（７）
（８）とを有することを特徴とする肌の化粧品残度検出
装置。2. An infrared light source (1) for irradiating the skin (2) with infrared light, and of the reflected infrared light, the absorbance of the first light having a wavelength having a high absorbance by the bare skin (2). And an absorbance detecting means (3) (4) (5) for detecting the absorbance of the second light having a wavelength with which the substance contained in the cosmetic has a high absorbance.
(6) and a cosmetic residual amount detecting means (7) for calculating the ratio of both absorbances and detecting the cosmetic residual amount of the skin based on the calculation result.
(8) A cosmetic cosmetic residue detection device, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3570595A JPH08233733A (en) | 1995-02-23 | 1995-02-23 | Method and apparatus for detecting extent of residual cosmetic on skin |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3570595A JPH08233733A (en) | 1995-02-23 | 1995-02-23 | Method and apparatus for detecting extent of residual cosmetic on skin |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08233733A true JPH08233733A (en) | 1996-09-13 |
Family
ID=12449290
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3570595A Pending JPH08233733A (en) | 1995-02-23 | 1995-02-23 | Method and apparatus for detecting extent of residual cosmetic on skin |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08233733A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1475637A1 (en) * | 2003-05-09 | 2004-11-10 | Institut Dr. Schrader Creachem GmbH | Metod for examining skin compatibility of substances |
| KR100836491B1 (en) * | 2002-12-17 | 2008-06-09 | (주)아모레퍼시픽 | Method for producing or testing skin care cosmetics by biophoton measurement and Skin care cosmetics produced or tested by the methods |
| JP2008224286A (en) * | 2007-03-09 | 2008-09-25 | Shiseido Co Ltd | Method of measuring decorative mode |
| KR20160097760A (en) | 2015-02-10 | 2016-08-18 | (주)아모레퍼시픽 | Method For Evaluating Application Uniformity of Makeup Cosmetics |
| WO2021131851A1 (en) * | 2019-12-26 | 2021-07-01 | 株式会社資生堂 | Beauty appliance and cosmetic sensor |
-
1995
- 1995-02-23 JP JP3570595A patent/JPH08233733A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100836491B1 (en) * | 2002-12-17 | 2008-06-09 | (주)아모레퍼시픽 | Method for producing or testing skin care cosmetics by biophoton measurement and Skin care cosmetics produced or tested by the methods |
| EP1475637A1 (en) * | 2003-05-09 | 2004-11-10 | Institut Dr. Schrader Creachem GmbH | Metod for examining skin compatibility of substances |
| JP2008224286A (en) * | 2007-03-09 | 2008-09-25 | Shiseido Co Ltd | Method of measuring decorative mode |
| KR20160097760A (en) | 2015-02-10 | 2016-08-18 | (주)아모레퍼시픽 | Method For Evaluating Application Uniformity of Makeup Cosmetics |
| WO2021131851A1 (en) * | 2019-12-26 | 2021-07-01 | 株式会社資生堂 | Beauty appliance and cosmetic sensor |
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