JPH08231559A - Phenol compound containing silicon - Google Patents

Phenol compound containing silicon

Info

Publication number
JPH08231559A
JPH08231559A JP7061643A JP6164395A JPH08231559A JP H08231559 A JPH08231559 A JP H08231559A JP 7061643 A JP7061643 A JP 7061643A JP 6164395 A JP6164395 A JP 6164395A JP H08231559 A JPH08231559 A JP H08231559A
Authority
JP
Japan
Prior art keywords
group
compound
formula
hydroxyl group
phenol compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7061643A
Other languages
Japanese (ja)
Other versions
JP3087597B2 (en
Inventor
Hiroshi Kanbara
浩 神原
Takashi Ueda
貴史 上田
Mitsuo Umemura
光雄 梅村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Priority to JP07061643A priority Critical patent/JP3087597B2/en
Publication of JPH08231559A publication Critical patent/JPH08231559A/en
Application granted granted Critical
Publication of JP3087597B2 publication Critical patent/JP3087597B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

PURPOSE: To obtain the subject new compound, having a small absorption wavelength, capable of shortening the wavelength of an exposure light source, having a satisfactory definition of a resist in an i-line region and useful as a component of a chemical amplified positive type resist material suitable for a microlithographic technique. CONSTITUTION: This phenol compound containing silicon of formula I [(n) is 1 or 2; X is hydroxyl group, a 2-4C lower alkenyl, a 2-4C lower alkoxy, a 6-10C aryloxy or a group of formula II or III (Y is hydroxyl group, a 1-4C lower alkyl, a 2-4C lower alkenyl, etc.) when (n) is 1, and hydroxyl group, a 1-4C lower alkyl, a 6-10C aryl or a group of formula II or III, etc., when (n) is 2], e.g. a compound of formula IV. The compound of formula I is obtained by protecting a phenolic hydroxyl group in the corresponding halogenated phenol compound with a pyran compound, etc., then reacting the halogen site with metallic Mg, providing a Grignard reagent, reacting the resultant Grignard reagent with the corresponding chlorosilane compound, etc., and subsequently carrying out the deprotecting reaction of the pyranyl group under acidic conditions.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、微細加工技術に適した
ポジ型レジスト材料の成分として好適な新規含ケイ素フ
ェノール化合物に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a novel silicon-containing phenol compound suitable as a component of a positive resist material suitable for fine processing technology.

【0002】[0002]

【従来の技術及び発明が解決しようとする課題】フォト
レジスト組成物の基本的構成は、特公昭37−1801
5号公報に示されて以来公知であり、このフォトレジス
ト組成物に用いる感光剤としては、以前よりポリヒドロ
キシベンゾフェノン、例えば2,3,4−トリヒドロキ
シベンゾフェノンの1,2−ナフトキノン−2−ジアジ
ドスルホン酸エステルが用いられてきた。
2. Description of the Related Art The basic constitution of a photoresist composition is disclosed in Japanese Examined Patent Publication No. 37-1801.
It has been publicly known since it was shown in Japanese Patent Publication No. 5 (1999) -58, and as a photosensitizer used for this photoresist composition, polyhydroxybenzophenone such as 1,2-naphthoquinone-2-di of 2,3,4-trihydroxybenzophenone has been used for a long time. Azidosulfonic acid esters have been used.

【0003】しかしながら、ハーフミクロン以下の高解
像度化と共に、露光光源の短波長化、即ちg線からi線
への進歩により、従来のヒドロキシベンゾフェノン系の
感光剤では対応ができなくなってきている。これは、主
としてベンゾフェノンのカルボニルの吸収がi線波長3
65nmでより大きくなり、効率の低下を生じるためと
推察される。
However, the conventional hydroxybenzophenone-based photosensitizers are no longer compatible with the increase in resolution of half micron or less and the shortening of the wavelength of the exposure light source, that is, the progress from g-line to i-line. This is because the absorption of carbonyl of benzophenone is i-line wavelength 3
It is speculated that it becomes larger at 65 nm, resulting in a decrease in efficiency.

【0004】このように、バラスト分子としてはトリ又
はテトラヒドロキシベンゾフェノン、更にペンタヒドロ
キシベンゾフェノンが公知であるが、i線領域において
は、レジスト膜の解像性に限界があり、より吸収波長の
小さい母核分子の設計が要求されているのが現状であ
る。
As described above, tri- or tetrahydroxybenzophenone and further pentahydroxybenzophenone are known as ballast molecules, but the resolution of the resist film is limited in the i-line region, and the mother film having a smaller absorption wavelength is used. At present, the design of nuclear molecules is required.

【0005】本発明は上記事情に鑑みなされたもので、
露光光源の短波長化に対応することができ、微細加工技
術に適したポジ型レジスト材料の成分として好適な新規
含ケイ素フェノール化合物を提供することを目的とす
る。
The present invention has been made in view of the above circumstances.
It is an object of the present invention to provide a novel silicon-containing phenol compound which can cope with a shorter wavelength of an exposure light source and which is suitable as a component of a positive resist material suitable for a fine processing technique.

【0006】[0006]

【課題を解決するための手段及び作用】本発明者は上記
目的を達成するため鋭意検討を重ねた結果、対応するハ
ロゲン化フェノール化合物のフェノール性水酸基をピラ
ン化合物で保護すると共にハロゲン部位を金属マグネシ
ウムと反応させることで得られるグリニャール試薬と、
対応するクロロシラン化合物又はアルコキシシラン化合
物とを反応させた後、酸性条件下でピラニル基を脱保護
反応させることにより合成することができる下記一般式
(1)で示される含ケイ素フェノール化合物が、吸収波
長が小さく、露光光源の短波長化、即ちg線からi線へ
の進歩に十分対応することができ、i線領域において満
足なレジストの解像性を有し、微細加工技術に適したポ
ジ型レジスト材料の成分として有効に利用できることを
知見し、本発明をなすに至った。
Means and Actions for Solving the Problems As a result of intensive studies to achieve the above-mentioned object, the present inventor has found that the phenolic hydroxyl group of the corresponding halogenated phenol compound is protected with a pyran compound and the halogen site is metal magnesium. A Grignard reagent obtained by reacting with
A silicon-containing phenol compound represented by the following general formula (1), which can be synthesized by reacting a corresponding chlorosilane compound or alkoxysilane compound and then deprotecting a pyranyl group under acidic conditions, has an absorption wavelength Is a positive type suitable for microfabrication technology, which can sufficiently cope with the shortening of the wavelength of the exposure light source, that is, the progress from g-line to i-line, and has satisfactory resist resolution in the i-line region. The inventors have found that they can be effectively used as a component of a resist material, and have completed the present invention.

【0007】[0007]

【化2】 Embedded image

【0008】従って、本発明は、上記一般式(1)で示
される含ケイ素フェノール化合物を提供する。
Therefore, the present invention provides a silicon-containing phenol compound represented by the above general formula (1).

【0009】以下、本発明につき更に詳細に説明する
と、本発明の含ケイ素フェノール化合物は、下記一般式
(1)で示されるものである。
The present invention will be described in more detail below. The silicon-containing phenol compound of the present invention is represented by the following general formula (1).

【0010】[0010]

【化3】 Embedded image

【0011】上記一般式(1)において、Xとして挙げ
た各基として具体的には、水酸基、メチル基、エチル
基、n−プロピル基、iso−プロピル基、n−ブチル
基、iso−ブチル基、sec−ブチル基、tert−
ブチル基などの炭素数1〜4の低級アルキル基、ビニル
基、アリル基、ホモアリル基などの炭素数2〜4の低級
アルケニル基、エトキシ基、n−プロポキシ基、iso
−プロポキシ基、n−ブトキシ基、iso−ブトキシ
基、sec−ブトキシ基、tert−ブトキシ基などの
炭素数2〜4の低級アルコキシ基、フェニル基、トリル
基、tert−ブチルフェニル基などの炭素数6〜10
のアリール基、フェノキシ基、トリロキシ基、tert
−ブチルフェノキシ基などの炭素数6〜10のアリール
オキシ基、下記構造の基等が挙げられる。
In the above general formula (1), each of the groups listed as X is specifically a hydroxyl group, a methyl group, an ethyl group, an n-propyl group, an iso-propyl group, an n-butyl group or an iso-butyl group. , Sec-butyl group, tert-
A lower alkyl group having 1 to 4 carbon atoms such as butyl group, a vinyl group, an allyl group, a lower alkenyl group having 2 to 4 carbon atoms such as homoallyl group, ethoxy group, n-propoxy group, iso
-Lower alkoxy group having 2 to 4 carbon atoms such as propoxy group, n-butoxy group, iso-butoxy group, sec-butoxy group, tert-butoxy group, etc., phenyl group, tolyl group, tert-butylphenyl group, etc. 6-10
Aryl group, phenoxy group, triloxy group, tert.
Examples include aryloxy groups having 6 to 10 carbon atoms such as -butylphenoxy group and groups having the following structures.

【0012】[0012]

【化4】 [Chemical 4]

【0013】また、Yとして具体的には、メチル基、エ
チル基、n−プロピル基、iso−プロピル基、n−ブ
チル基、iso−ブチル基、sec−ブチル基、ter
t−ブチル基などの炭素数1〜4の低級アルキル基、ビ
ニル基、アリル基、ホモアリル基などの炭素数2〜4の
低級アルケニル基、エトキシ基、n−プロポキシ基、i
so−プロポキシ基、n−ブトキシ基、iso−ブトキ
シ基、sec−ブトキシ基、tert−ブトキシ基など
の炭素数2〜4の低級アルコキシ基、フェニル基、トリ
ル基、tert−ブチルフェニル基などの炭素数6〜1
0のアリール基、フェノキシ基、トリロキシ基、ter
t−ブチルフェノキシ基などの炭素数6〜10のアリー
ルオキシ基、水酸基等が挙げられる。
Specific examples of Y include methyl group, ethyl group, n-propyl group, iso-propyl group, n-butyl group, iso-butyl group, sec-butyl group and ter.
lower alkyl group having 1 to 4 carbon atoms such as t-butyl group, lower alkenyl group having 2 to 4 carbon atoms such as vinyl group, allyl group and homoallyl group, ethoxy group, n-propoxy group, i
a lower alkoxy group having 2 to 4 carbon atoms such as so-propoxy group, n-butoxy group, iso-butoxy group, sec-butoxy group and tert-butoxy group, carbon such as phenyl group, tolyl group and tert-butylphenyl group Number 6 to 1
0 aryl group, phenoxy group, triloxy group, ter
Examples thereof include aryloxy groups having 6 to 10 carbon atoms such as t-butylphenoxy group and hydroxyl groups.

【0014】上記一般式(1)の化合物として具体的に
は、下記構造の化合物を例示することができる。
Specific examples of the compound represented by the general formula (1) include compounds having the following structures.

【0015】[0015]

【化5】 Embedded image

【0016】[0016]

【化6】 [Chemical 6]

【0017】上記一般式(1)で示される新規含ケイ素
フェノール化合物は、例えば対応するハロゲン化フェノ
ール化合物のフェノール性水酸基をピラン化合物などで
保護すると共に、ハロゲン部位を金属マグネシウムと反
応させてグリニャール試薬として、これと対応するクロ
ロシラン化合物又はアルコキシシラン化合物と反応させ
た後、酸性条件下でピラニル基を脱保護反応させること
により、容易に合成することができる(特開平2−11
7682号公報参照)。
The novel silicon-containing phenol compound represented by the above-mentioned general formula (1) is, for example, a phenolic hydroxyl group of a corresponding halogenated phenol compound is protected with a pyran compound or the like, and a halogen site is reacted with magnesium metal to grignard reagent. As a reaction product, a chlorosilane compound or an alkoxysilane compound corresponding thereto can be reacted, and then the pyranyl group can be deprotected under acidic conditions to easily synthesize the compound (JP-A-2-11).
7682).

【0018】すなわち、下記反応式(A)又は反応式
(B)に従って式(1)の含ケイ素フェノール化合物を
製造することができる。
That is, the silicon-containing phenol compound of the formula (1) can be produced according to the following reaction formula (A) or reaction formula (B).

【0019】[0019]

【化7】 [Chemical 7]

【0020】[0020]

【化8】 Embedded image

【0021】この場合、式(5)でグリニャール試薬
は、常法に従い、室温又は70℃以下の条件で窒素雰囲
気下で金属マグネシウムと反応させることにより得られ
る。通常、このグリニャール反応は無水THFやジエチ
ルエーテルなどの溶剤に溶解させて行うが、特に無水T
HFの使用は、反応原料と反応生成物の溶解性向上に寄
与するため、有効である。
In this case, the Grignard reagent of the formula (5) can be obtained by reacting with magnesium metal in a nitrogen atmosphere at room temperature or 70 ° C. or lower according to a conventional method. Usually, this Grignard reaction is carried out by dissolving it in a solvent such as anhydrous THF or diethyl ether.
The use of HF is effective because it contributes to the improvement of the solubility of the reaction raw material and the reaction product.

【0022】式(4)又は式(4′)のシランと式
(5)のグリニャール試薬との反応は、室温又は70℃
以下の条件下で行う。
The reaction of the silane of formula (4) or formula (4 ') with the Grignard reagent of formula (5) is carried out at room temperature or 70 ° C.
Perform under the following conditions.

【0023】ピラニル基の脱保護反応は、メタノール、
エタノール、THF又はそれらの混合溶剤中にて、少量
の酸を加えて室温あるいは50℃以下の条件で行う。
The deprotection reaction of the pyranyl group is carried out with methanol,
A small amount of acid is added in ethanol, THF or a mixed solvent thereof at room temperature or at 50 ° C. or lower.

【0024】このようにしてピラニル基が脱離した含ケ
イ素フェノール化合物を得ることができる。
In this way, a silicon-containing phenol compound free of a pyranyl group can be obtained.

【0025】[0025]

【発明の効果】本発明の新規な含ケイ素フェノール化合
物は、吸収波長が小さく、露光光源の短波長化、即ちg
線からi線への進歩に十分対応することができ、i線領
域において満足なレジストの解像性を有し、微細加工技
術に適した化学増幅ポジ型レジスト材料の成分として好
適に利用することができる。
INDUSTRIAL APPLICABILITY The novel silicon-containing phenol compound of the present invention has a small absorption wavelength and shortens the wavelength of the exposure light source, that is, g
To be able to sufficiently cope with the progress from the i-line to the i-line, have a satisfactory resist resolution in the i-line region, and be suitably used as a component of a chemically amplified positive resist material suitable for microfabrication technology. You can

【0026】[0026]

【実施例】以下、実施例を示して本発明を具体的に説明
するが、本発明は下記実施例に制限されるものではな
い。
EXAMPLES The present invention will now be specifically described with reference to examples, but the present invention is not limited to the following examples.

【0027】〔実施例1〕攪拌機、コンデンサー、温度
計を具備した1リットルの4つ口フラスコ内にマグネシ
ウム粉末10.94g(0.45mol)、無水テトラ
ヒドロフラン(THF)50mlを仕込み、その中にp
−ブロモフェニルピラニルエーテル76.8g(0.3
mol)と無水THF300mlの溶液を窒素気流下、
約90分間で滴下し、グリニャール試薬を調製した。
Example 1 Magnesium powder 10.94 g (0.45 mol) and anhydrous tetrahydrofuran (THF) 50 ml were charged into a 1 liter four-necked flask equipped with a stirrer, a condenser and a thermometer, and p was charged therein.
-Bromophenylpyranyl ether 76.8 g (0.3
mol) and 300 ml of anhydrous THF under a nitrogen stream,
The solution was added dropwise over about 90 minutes to prepare a Grignard reagent.

【0028】次に、窒素置換した1リットルの4つ口フ
ラスコ内にメチルトリクロロシラン14.3g(0.0
96mol)と無水THF50mlの混合溶液を仕込
み、その中に上記グリニャール試薬溶液を35℃にて9
0分間かけて滴下し、その後室温下で18時間攪拌し
た。
Next, 14.3 g (0.0) of methyltrichlorosilane was placed in a 1-liter four-necked flask which had been purged with nitrogen.
96 mol) and 50 ml of anhydrous THF were charged, and the Grignard reagent solution was added thereto at 35 ° C.
The mixture was added dropwise over 0 minutes and then stirred at room temperature for 18 hours.

【0029】次に、100mlの水中に上記溶液を注
ぎ、反応を終結させ、酢酸エチルで抽出し、水洗後、溶
媒を減圧留去すると、一部白色結晶が析出した。この結
晶を濾別し、エタノールで再結晶することにより、トリ
ス−(p−ピラニルオキシフェニル)メチルシラン7.
2g(収率13%)を得た。一方、粘稠濾液相について
は、ヘキサン洗浄することにより、ビス−(p−ピラニ
ルオキシフェニル)メチルシラノール23.1g(収率
58%)を得た。
Next, the above solution was poured into 100 ml of water to terminate the reaction, extracted with ethyl acetate, washed with water, and the solvent was distilled off under reduced pressure to precipitate a part of white crystals. The crystals were filtered off and recrystallized from ethanol to give tris- (p-pyranyloxyphenyl) methylsilane 7.
2 g (yield 13%) was obtained. On the other hand, the viscous filtrate phase was washed with hexane to obtain 23.1 g (yield 58%) of bis- (p-pyranyloxyphenyl) methylsilanol.

【0030】次に、上述で得られたトリス−(p−ピラ
ニルオキシフェニル)メチルシラン1.5g(2.61
mmol)をエタノール20ml、THF10mlの混
合溶液に溶解し、1%塩酸0.08mlを加え、室温で
20時間攪拌した。その後、酢酸エチルで抽出し、水洗
後、溶媒を減圧留去したところ、白色結晶のトリス−
(p−ヒドロキシフェニル)メチルシラン0.77g
(収率91%)が得られた。
Next, 1.5 g (2.61 g) of tris- (p-pyranyloxyphenyl) methylsilane obtained above.
mmol) was dissolved in a mixed solution of 20 ml of ethanol and 10 ml of THF, 0.08 ml of 1% hydrochloric acid was added, and the mixture was stirred at room temperature for 20 hours. Then, the mixture was extracted with ethyl acetate, washed with water, and the solvent was distilled off under reduced pressure.
(P-Hydroxyphenyl) methylsilane 0.77 g
(Yield 91%) was obtained.

【0031】得られたトリス−(p−ヒドロキシフェニ
ル)メチルシランの核磁気共鳴スペクトル(NMR)、
赤外線スペクトル(IR)の結果は下記のとおりであっ
た。
Nuclear magnetic resonance spectrum (NMR) of the obtained tris- (p-hydroxyphenyl) methylsilane,
The infrared spectrum (IR) results were as follows.

【0032】[0032]

【化9】 [Chemical 9]

【0033】〔実施例2〕上記実施例1と同様にして粘
稠濾液相から得られたビス−(p−ピラニルオキシフェ
ニル)メチルシラノール8.2g(19.8mmol)
をエタノール50mlに溶解し、1%塩酸0.5mlを
加え、室温で20時間攪拌した。その後、酢酸エチルで
抽出して水洗後、溶媒を減圧留去すると、粘稠性物質が
得られた。この粘稠性物質を石油エーテルを用いて加熱
抽出し、残留沈殿物から残存溶媒を減圧留去したとこ
ろ、ビス−(p−ヒドロキシフェニル)メチルシラノー
ル1.22g(収率25%)が得られた。
Example 2 8.2 g (19.8 mmol) of bis- (p-pyranyloxyphenyl) methylsilanol obtained from the viscous filtrate phase in the same manner as in Example 1 above.
Was dissolved in 50 ml of ethanol, 0.5 ml of 1% hydrochloric acid was added, and the mixture was stirred at room temperature for 20 hours. Then, after extraction with ethyl acetate and washing with water, the solvent was distilled off under reduced pressure to obtain a viscous substance. This viscous substance was extracted by heating with petroleum ether and the residual solvent was distilled off under reduced pressure from the residual precipitate to obtain 1.22 g (yield 25%) of bis- (p-hydroxyphenyl) methylsilanol. It was

【0034】得られたビス(p−ヒドロキシフェニル)
メチルシラノールの核磁気共鳴スペクトル(NMR)、
赤外線スペクトル(IR)の結果は下記のとおりであっ
た。
Obtained bis (p-hydroxyphenyl)
Nuclear magnetic resonance spectrum (NMR) of methylsilanol,
The infrared spectrum (IR) results were as follows.

【0035】[0035]

【化10】 [Chemical 10]

【0036】〔実施例3〕上記実施例1と同様にして粘
稠濾液相から得られたビス−(p−ピラニルオキシフェ
ニル)メチルシラノール8.2g(19.8mmol)
をエタノール50mlに溶解し、1%塩酸0.5mlを
加え、室温で20時間攪拌した。その後、酢酸エチルで
抽出し、水洗後、溶媒を減圧留去すると、粘稠性物質が
得られた。この粘稠性物質を石油エーテルを用いて加熱
抽出した後、石油エーテル相から溶媒を減圧留去したと
ころ、1,1,3,3−テトラキス−(p−ヒドロキシ
フェニル)−1,3−ジメチルジシロキサン3.05g
(収率65%)が得られた。得られた1,1,3,3−
テトラキス−(p−ヒドロキシフェニル)−1,3−ジ
メチルジシロキサンの核磁気共鳴スペクトル(NM
R)、赤外線スペクトル(IR)の結果は下記のとおり
であった。
Example 3 8.2 g (19.8 mmol) of bis- (p-pyranyloxyphenyl) methylsilanol obtained from the viscous filtrate phase in the same manner as in Example 1 above.
Was dissolved in 50 ml of ethanol, 0.5 ml of 1% hydrochloric acid was added, and the mixture was stirred at room temperature for 20 hours. Then, the mixture was extracted with ethyl acetate, washed with water, and the solvent was distilled off under reduced pressure to obtain a viscous substance. The viscous substance was heated and extracted with petroleum ether, and the solvent was distilled off from the petroleum ether phase under reduced pressure to give 1,1,3,3-tetrakis- (p-hydroxyphenyl) -1,3-dimethyl. Disiloxane 3.05g
(Yield 65%) was obtained. Obtained 1,1,3,3-
Nuclear magnetic resonance spectrum of tetrakis- (p-hydroxyphenyl) -1,3-dimethyldisiloxane (NM
The results of R) and infrared spectrum (IR) are as follows.

【0037】[0037]

【化11】 [Chemical 11]

───────────────────────────────────────────────────── フロントページの続き (72)発明者 梅村 光雄 群馬県碓氷郡松井田町大字人見1番地10 信越化学工業株式会社シリコーン電子材料 技術研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Mitsuo Umemura 1 Hitomi, Oita, Matsuida-cho, Usui-gun, Gunma 10 Shin-Etsu Chemical Co., Ltd. Silicone Electronic Materials Research Laboratory

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 下記一般式(1)で示される含ケイ素フ
ェノール化合物。 【化1】
1. A silicon-containing phenol compound represented by the following general formula (1). Embedded image
JP07061643A 1995-02-24 1995-02-24 Silicon-containing phenol compound Expired - Lifetime JP3087597B2 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007262025A (en) * 2006-03-29 2007-10-11 Yuki Gosei Kogyo Co Ltd Dialkylsilanol compound and method for producing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007262025A (en) * 2006-03-29 2007-10-11 Yuki Gosei Kogyo Co Ltd Dialkylsilanol compound and method for producing the same

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