JPH08227923A - Evaluation test method for semiconductor photoelectric element - Google Patents

Abstract

PURPOSE: To perform the electric characteristic test of a semiconductor photoelectric element under a state close to actual using state by inserting a lens group between a light source and the semiconductor photoelectric element and irradiating the semiconductor photoelectric element with light from the light source at a narrow angle while preventing the semiconductor photoelectric element from being irradiated with scattering light. CONSTITUTION: A lens group 1 is inserted between a light source 4 and the semiconductor photoelectric element 2. The semiconductor photoelectric element 2 can be irradiated with light from the light source 4 at a narrow angle under a state close to actual using state through the lens group 1 comprising rod lenses inserted between a light source 4 and the semiconductor photoelectric element 2. Consequently, the incident angle of light is limited even for a light receiving element located at a position remote from the center of the semiconductor photoelectric element 2 and the light receiving element is not irradiated with the scattering light. With such method, electric characteristics test can be performed for the semiconductor photoelectric element 2 under a state close to actual using state.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor photoelectric device evaluation test method.

[0002]

2. Description of the Related Art Conventionally, as shown in FIG.
On the other hand, the electric characteristic test was conducted by directly irradiating the light emitted from the light source 4.

[0003]

However, as shown in FIG. 4, according to the conventional method for evaluating and testing the semiconductor photoelectric element 2 in which the light from the light source 4 is directly applied to the semiconductor photoelectric element 2, the light from the light source 4 is not detected. Is dispersed and is irradiated over a wide range, so that the incident angle of light is widened particularly in the light receiving element 3 which is located away from the center of the semiconductor photoelectric element 2 as shown in FIG. It had the drawback of conducting an electrical characteristic test in the state.

In order to solve such conventional problems, the present invention aims to irradiate light from a light source at a narrow angle, which is close to the actual use state of a semiconductor photoelectric device.

[0005]

In order to solve the above-mentioned problems, the present invention inserts a lens group between a light source and a semiconductor photoelectric element so that the light of the light source is close to the actual use state of the semiconductor photoelectric element. It is possible to irradiate at a narrow angle.

[0006]

By inserting the lens group 1 between the light source 4 and the semiconductor photoelectric element 2 as shown in FIG. 1, the light receiving element 3 existing at a position away from the center of the semiconductor photoelectric element 2 as shown in FIG. Also, the incident angle of light is narrowly limited, and the light that is dispersed and spread is not irradiated.

[0007]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a basic configuration diagram of a semiconductor testing device of the present invention, in which light from a light source 4 is emitted from a semiconductor photoelectric device 2 by a lens group 1 including a rod-shaped lens inserted between the light source 4 and the semiconductor photoelectric device 2. It is designed so that irradiation can be performed at a narrow angle, which is close to the state of actual use. Note that FIG. 2 is an enlarged view of the portion A of FIG. 1, and the incident angle of light to the light receiving element 3 existing at a position away from the center of the semiconductor photoelectric element 2 is limited to a narrow range, and the light that is dispersed and spread is irradiated. It means that it will not be done.

FIG. 3 shows one of the embodiments of the semiconductor testing apparatus according to the present invention, in which the lens group 1 and the light source 4 are fixed by a column 6 standing on the upper surface of a probe card 5.

[0009]

As described above, according to the present invention, the light from the light source is applied to the semiconductor photoelectric element at a narrow angle, and the light which is dispersed and spread is not applied. There is an effect that the electrical characteristic test can be performed.

[Brief description of drawings]

FIG. 1 is a basic configuration diagram of a semiconductor test apparatus of the present invention.

FIG. 2 is an enlarged view of a portion A surrounded by a dotted line in FIG.

FIG. 3 is a configuration diagram of an embodiment of a semiconductor test apparatus according to the present invention.

FIG. 4 is a basic configuration diagram of a conventional semiconductor test apparatus.

5 is an enlarged view of a portion B surrounded by a dotted line in FIG. 1 lens group 2 semiconductor photoelectric element 3 light receiving element 4 light source 5 probe card 6 support

Claims (1)

[Claims] 1. A semiconductor photoelectric device evaluation test method for irradiating a semiconductor photoelectric device, which is a device under test, with light emitted from a light source to perform a characteristic test of the semiconductor photoelectric device, wherein the light emitted from the light source is divided into a plurality of optical paths. To receive light,
The semiconductor photoelectric device evaluation test method for performing an electrical characteristic test of the semiconductor photoelectric device, characterized in that light from the optical path is irradiated to each position of the semiconductor photoelectric device corresponding to each of the divided row optical paths. .