JPH06101508B2 - Semiconductor test equipment - Google Patents
Semiconductor test equipmentInfo
- Publication number
- JPH06101508B2 JPH06101508B2 JP1331821A JP33182189A JPH06101508B2 JP H06101508 B2 JPH06101508 B2 JP H06101508B2 JP 1331821 A JP1331821 A JP 1331821A JP 33182189 A JP33182189 A JP 33182189A JP H06101508 B2 JPH06101508 B2 JP H06101508B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- semiconductor
- light source
- semiconductor photoelectric
- semiconductor test
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体試験装置に関する。TECHNICAL FIELD The present invention relates to a semiconductor test apparatus.
本発明は、半導体光電素子の電気的特性試験を行うため
の半導体試験装置において、光源と半導体光電素子との
間にレンズ群を挿入することにより、光源からの分散し
た光を半導体光電素子に対して実使用状態に近い、狭い
角度に修正して照射することを可能にしたものである。The present invention, in a semiconductor testing device for performing an electrical characteristic test of a semiconductor photoelectric device, by inserting a lens group between the light source and the semiconductor photoelectric device, the dispersed light from the light source to the semiconductor photoelectric device. It is possible to irradiate after correcting to a narrow angle close to the actual use state.
従来は第４図のように、半導体光電素子２に対して光源
４が発する光を直接照射して電気的特性試験を行ってい
た。Conventionally, as shown in FIG. 4, the semiconductor photoelectric element 2 was directly irradiated with the light emitted from the light source 4 to perform an electrical characteristic test.
しかし、第４図に示すとおり、従来のように光源４の光
を半導体光電素子２に直接照射する方式の半導体試験装
置では、光源４の光が分散して広範囲にわたって照射さ
れるので、特に第５図のような半導体光電素子２の中央
から離れた位置に存在する受光素子３では、光の入射角
度が広くなってしまい、実使用と異なった状態で電気的
特性試験を行ってしまうという欠点を有していた。However, as shown in FIG. 4, in the conventional semiconductor test apparatus of the type in which the light from the light source 4 is directly applied to the semiconductor photoelectric element 2, the light from the light source 4 is dispersed and applied over a wide range. In the light receiving element 3 existing at a position away from the center of the semiconductor optoelectronic element 2 as shown in FIG. 5, the incident angle of light becomes wide, and an electrical characteristic test is performed in a state different from actual use. Had.
本発明は、従来のこのような問題点を解決するために、
光源の光を半導体光電素子の実使用状態に近い、狭い角
度で照射することを目的としている。In order to solve the above-mentioned conventional problems, the present invention provides
The purpose is to irradiate the light from the light source at a narrow angle close to the actual usage state of the semiconductor photoelectric device.
上記問題点を解決するために、本発明は光源と半導体光
電素子との間にレンズ群を挿入し、光源の光を半導体光
電素子の実使用状態に近い、狭い角度で照射できるよう
にした。In order to solve the above problems, the present invention inserts a lens group between the light source and the semiconductor photoelectric device so that the light from the light source can be emitted at a narrow angle close to the actual use state of the semiconductor photoelectric device.
第１図のように、光源３と半導体光電素子２との間にレ
ンズ群１を挿入したことにより、第２図のような半導体
光電素子２の中央から離れた位置に存在する受光素子３
に対しても光の入射角度が狭く限定され、分散して広が
った光は照射されない。By inserting the lens group 1 between the light source 3 and the semiconductor photoelectric element 2 as shown in FIG. 1, the light receiving element 3 existing at a position away from the center of the semiconductor photoelectric element 2 as shown in FIG.
Also, the incident angle of light is narrowly limited, and the light that is dispersed and spread is not irradiated.
以下に、本発明の実施例を図面に基づいて説明する。 Embodiments of the present invention will be described below with reference to the drawings.
第１図は本発明の半導体試験装置の基本構成図であり、
光源４と半導体光電素子２との間に挿入したレンズ群１
によって光源４からの光を半導体光電素子２の実使用状
態に近い、狭い角度で照射できるようにしたものであ
る。なお、第２図は第１図の部分Ａの拡大図であり、半
導体光電素子２の中央から離れた位置に存在する受光素
子３に対する光の入射角度が狭く限定され、分散して広
がった光は照射されないということを示している。FIG. 1 is a basic configuration diagram of a semiconductor test apparatus of the present invention,
Lens group 1 inserted between the light source 4 and the semiconductor photoelectric element 2.
By this, the light from the light source 4 can be emitted at a narrow angle close to the actual use state of the semiconductor photoelectric element 2. Note that FIG. 2 is an enlarged view of the portion A of FIG. 1, and the incident angle of light on the light receiving element 3 existing at a position away from the center of the semiconductor photoelectric device 2 is limited to a narrow range, and the light spread in a dispersed manner Indicates that it is not irradiated.
第３図は本発明に係る半導体試験装置の実施例を１つを
示すもので、レンズ群１と光源４をプローブカード５の
上面に立てた支柱６によって固定したものである。FIG. 3 shows one embodiment of the semiconductor test apparatus according to the present invention, in which the lens group 1 and the light source 4 are fixed by a column 6 standing on the upper surface of the probe card 5.
以上説明したように、本発明は光源の光を半導体光電素
子に対して狭角で照射し、分散して広がった光は照射さ
れないので、半導体光電素子の実使用に近い状態で電気
的特性試験を行うことができるという効果がある。As described above, according to the present invention, the light from the light source is emitted to the semiconductor photoelectric element at a narrow angle, and the light that is dispersed and spread is not emitted. There is an effect that can be done.
第１図は本発明の半導体試験装置の基本構成図、第２図
は第１図の点線で囲まれた部分Ａの拡大図、第３図は本
発明に係る半導体試験装置の実施例の構成図、第４図は
従来の半導体試験装置の基本構成図、第５図は第５図の
点線で囲まれた部分Ｂの拡大図である。 １……レンズ群 ２……半導体光電素子 ３……受光素子 ４……光源 ５……プローブカード ６……支柱1 is a basic configuration diagram of a semiconductor test apparatus of the present invention, FIG. 2 is an enlarged view of a portion A surrounded by a dotted line in FIG. 1, and FIG. 3 is a configuration of an embodiment of the semiconductor test apparatus according to the present invention. FIG. 4 is a basic configuration diagram of a conventional semiconductor test apparatus, and FIG. 5 is an enlarged view of a portion B surrounded by a dotted line in FIG. 1 ... Lens group 2 ... Semiconductor photoelectric element 3 ... Light receiving element 4 ... Light source 5 ... Probe card 6 ... Post
Claims (1)
間に、前記光源が発する光を、前記半導体光電素子に対
して少なくとも光源から直接照射した場合の角度よりも
狭い角度で照射するためのレンズ群を有して、前記半導
体光電素子の電気的特性試験を行う半導体試験装置。1. The light emitted from the light source is radiated between the light source and the semiconductor photoelectric device as the DUT at an angle narrower than an angle at least when the light is directly radiated to the semiconductor photoelectric device. A semiconductor test device having a lens group for performing an electrical characteristic test of the semiconductor photoelectric device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1331821A JPH06101508B2 (en) | 1989-12-20 | 1989-12-20 | Semiconductor test equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1331821A JPH06101508B2 (en) | 1989-12-20 | 1989-12-20 | Semiconductor test equipment |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7329035A Division JPH08227923A (en) | 1995-12-18 | 1995-12-18 | Evaluation test method for semiconductor photoelectric element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03190255A JPH03190255A (en) | 1991-08-20 |
| JPH06101508B2 true JPH06101508B2 (en) | 1994-12-12 |
Family
ID=18248020
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1331821A Expired - Lifetime JPH06101508B2 (en) | 1989-12-20 | 1989-12-20 | Semiconductor test equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06101508B2 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5810631A (en) * | 1981-07-13 | 1983-01-21 | Ushio Inc | Light irradiator |
-
1989
- 1989-12-20 JP JP1331821A patent/JPH06101508B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5810631A (en) * | 1981-07-13 | 1983-01-21 | Ushio Inc | Light irradiator |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03190255A (en) | 1991-08-20 |
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