JPH08208882A - Filler for semiconductor sealing resin - Google Patents
Filler for semiconductor sealing resinInfo
- Publication number
- JPH08208882A JPH08208882A JP31499895A JP31499895A JPH08208882A JP H08208882 A JPH08208882 A JP H08208882A JP 31499895 A JP31499895 A JP 31499895A JP 31499895 A JP31499895 A JP 31499895A JP H08208882 A JPH08208882 A JP H08208882A
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- JP
- Japan
- Prior art keywords
- filler
- weight
- resin
- particle size
- average particle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Compositions Of Macromolecular Compounds (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体樹脂封止用
充填材、詳しくは半導体封止用樹脂組成物にバリ止め効
果を付与することのできる半導体樹脂封止用充填材に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor resin encapsulating filler, and more particularly to a semiconductor resin encapsulating filler capable of imparting a burr prevention effect to a semiconductor encapsulating resin composition.
【０００２】[0002]
【従来の技術】無機質充填材とエポキシ樹脂とからなる
樹脂組成物は、電気特性、機械的強度、耐熱性、耐信頼
性及び成形性に優れるため、ＩＣ、ＬＳＩ、ＶＬＳＩ等
の高集積回路等の電子部品の封止に利用されている。2. Description of the Related Art A resin composition comprising an inorganic filler and an epoxy resin is excellent in electrical properties, mechanical strength, heat resistance, reliability and moldability, and therefore is required to be used in highly integrated circuits such as ICs, LSIs and VLSIs. Used for sealing electronic components.
【０００３】従来、半導体の樹脂封止にはトランスファ
ー成形が広く採用されており、一度に多数のチップを封
止させるため、流動性に優れたすなわちスパイラルフロ
ーの大きな樹脂組成物が望まれている。この要望を満た
し、しかも樹脂組成物の耐サーマルショック性を向上さ
せるため、球状フィラーを充填材とすることが知られて
いる。しかしながら、球状フィラーを用いた樹脂組成物
は、破砕フィラーを用いたそれと比較してバリの発生が
多いので、その除去作業を頻繁に行う必要があり作業性
を著しく低下させていた。Conventionally, transfer molding has been widely used for resin encapsulation of semiconductors. In order to seal many chips at once, a resin composition having excellent fluidity, that is, a large spiral flow is desired. . It is known that a spherical filler is used as a filler in order to satisfy this demand and to improve the thermal shock resistance of the resin composition. However, since the resin composition using the spherical filler generates more burrs than that using the crushed filler, it is necessary to frequently remove the burrs, thereby significantly reducing the workability.
【０００４】バリを減少させる充填材として、平均粒径
５〜３０μｍの溶融シリカと平均粒径０．０１〜０．５
μｍの微細な球状溶融シリカとを併用すること（特開昭
６２−３９６４１号公報）が提案されているが、これで
はスパイラルフローの低下が大きくなりバリ止め効果が
十分でないという欠点があった。As fillers for reducing burrs, fused silica having an average particle size of 5 to 30 μm and an average particle size of 0.01 to 0.5 μm are used.
It has been proposed to use in combination with a fine spherical fused silica having a diameter of μm (Japanese Patent Application Laid-Open No. 62-39641), but this has a disadvantage that the spiral flow is greatly reduced and the effect of preventing burrs is not sufficient.
【０００５】[0005]
【発明が解決しようとする課題】本発明者らは、上記欠
点を解決することを目的として種々検討した結果、平均
粒径が１０〜３０μｍの無機質粉末（以下、この無機質
粉末を「基本充填材」という。）８５〜９９．５重量％
と、平均粒径が０．６〜５μｍで１μｍ以下の粒子の含
有率が１０〜８０重量％でありしかも２μｍ以下の粒子
の含有率が２０〜９０重量％である無機質粉末（以下、
この無機質粉末を「バリ止め剤」という。）０．５〜１
５重量％とからなる充填材を使用すれば良いことを見い
だし、本発明を完成させたものである。As a result of various studies aimed at solving the above-mentioned drawbacks, the present inventors have found that an inorganic powder having an average particle diameter of 10 to 30 μm (hereinafter referred to as “basic filler”). 85% to 99.5% by weight.
And an inorganic powder having an average particle size of 0.6 to 5 μm and a content of particles of 1 μm or less of 10 to 80% by weight and a content of particles of 2 μm or less of 20 to 90% by weight (hereinafter,
This inorganic powder is called a "burr inhibitor". ) 0.5-1
It has been found that it is sufficient to use a filler consisting of 5% by weight, and the present invention has been completed.
【０００６】[0006]
【課題を解決するための手段】すなわち、本発明は、基
本充填材８５〜９９．５重量％とバリ止め剤０．５〜１
５重量％とからなることを特徴とする半導体樹脂封止用
充填材である。That is, the present invention relates to a base filler of 85 to 99.5% by weight and a deburring agent of 0.5 to 1%.
It is a filler for semiconductor resin encapsulation, which is characterized by comprising 5% by weight.
【０００７】[0007]
【発明の実施の形態】以下、更に詳しく本発明について
説明する。The present invention will be described in more detail below.
【０００８】本発明で使用される基本充填材は、結晶性
シリカ、溶融シリカ、ケイ酸カルシウム、アルミナ、炭
酸カルシウム、窒化ケイ素、炭化ケイ素、窒化アルミニ
ウム、タルク等の無機質粉末である。基本充填材の粒度
分布は平均粒径が１０〜３０μｍであり、１０μｍ未満
では樹脂組成物のスパイラルフローが流れず、また３０
μｍをこえるとスパイラルフローが小さくなる。基本充
填材の形状とその製造方法については公知技術を採用す
ることができる。The basic filler used in the present invention is an inorganic powder such as crystalline silica, fused silica, calcium silicate, alumina, calcium carbonate, silicon nitride, silicon carbide, aluminum nitride, talc and the like. The particle size distribution of the basic filler has an average particle size of 10 to 30 μm. If the average particle size is less than 10 μm, the spiral flow of the resin composition does not flow.
If it exceeds μm, the spiral flow becomes small. Known techniques can be employed for the shape of the basic filler and the method for producing the same.
【０００９】本発明で使用されるバリ止め剤は、結晶性
シリカ、溶融シリカ、ケイ酸カルシウム、アルミナ、炭
酸カルシウム、窒化ケイ素、炭化ケイ素、窒化アルミニ
ウム、タルク等の無機質粉末である。The deburring agent used in the present invention is an inorganic powder such as crystalline silica, fused silica, calcium silicate, alumina, calcium carbonate, silicon nitride, silicon carbide, aluminum nitride and talc.
【００１０】バリ止め剤の粒度分布は平均粒径が０．６
〜５μｍである。平均粒径が０．６μｍ未満では樹脂組
成物のスパイラルフローが低下し、また５μｍをこえる
とバリを小さくする効果が乏しくなる。また、バリ止め
剤の１μｍ以下の粒子の含有率は１０〜８０重量％であ
り、２μｍ以下の粒子の含有率は２０〜９０重量％であ
る。１μｍ以下の粒子の含有率が１０重量％未満である
か、又は２μｍ以下の粒子の含有率が２０重量％未満で
あるとバリ止め効果が乏しくなる。一方、１μｍ以下の
粒子の含有率が８０重量％をこえるか、又は２μｍ以下
の粒子の含有率が９０重量％をこえるとスパイラルフロ
ーが低下する。The particle size distribution of the deburring agent is such that the average particle size is 0.6.
~ 5 μm. If the average particle size is less than 0.6 μm, the spiral flow of the resin composition will be reduced, and if it exceeds 5 μm, the effect of reducing burrs will be poor. The content of particles having a size of 1 μm or less in the deburring agent is 10 to 80% by weight, and the content of particles having a size of 2 μm or less is 20 to 90% by weight. If the content of particles of 1 μm or less is less than 10% by weight, or if the content of particles of 2 μm or less is less than 20% by weight, the deburring effect becomes poor. On the other hand, if the content of particles of 1 μm or less exceeds 80% by weight or the content of particles of 2 μm or less exceeds 90% by weight, the spiral flow decreases.
【００１１】バリ止め剤は、粉砕による方法、分級等に
よる方法、合成による方法等で製造することができ、ま
たその粒子形状については特に制限はない。The deburring agent can be produced by a method of pulverization, a method of classification or the like, a method of synthesis, and the like, and the particle shape is not particularly limited.
【００１２】基本充填材とバリ止め剤の割合は、基本充
填材８５〜９９．５重量％、バリ止め剤０．５〜１５重
量％である。バリ止め剤が０．５重量％未満ではバリ止
め効果が得られず、また１５重量％をこえるとスパイラ
ルフローが低下する。The ratio between the basic filler and the deburring agent is 85 to 99.5% by weight of the basic filler and 0.5 to 15% by weight of the deburring agent. When the amount of the burr-inhibiting agent is less than 0.5% by weight, the burr-inhibiting effect cannot be obtained, and when it exceeds 15% by weight, the spiral flow decreases.
【００１３】本発明の半導体樹脂封止用充填材の配合さ
れる樹脂としては、一般市販のエポキシ樹脂の他、シリ
コーン樹脂、アルキド樹脂、不飽和ポリエステル樹脂、
ポリアミノビスマレイミド、ジアリルフタレート樹脂、
フッ素樹脂、ポリアミドイミド、ポリアミド、ポリエス
テル、液晶ポリマー、ポリフェニレンスルフィド、ポリ
フェニレンエーテル、アクリル樹脂、フェノール樹脂等
を使用することができる。The resin in which the filler for encapsulating a semiconductor resin of the present invention is blended may be a commercially available epoxy resin, a silicone resin, an alkyd resin, an unsaturated polyester resin, or the like.
Polyamino bismaleimide, diallyl phthalate resin,
Fluorine resin, polyamide imide, polyamide, polyester, liquid crystal polymer, polyphenylene sulfide, polyphenylene ether, acrylic resin, phenol resin and the like can be used.
【００１４】[0014]
【実施例】次に、実施例、比較例、参考例をあげて更に
具体的に本発明を説明する。Next, the present invention will be described more specifically with reference to examples, comparative examples and reference examples.
【００１５】実施例１〜５ 比較例１〜５ 参考例１〜
３ （充填材の製造）平均粒径６．０μｍの球状溶融シリカ
粉末を分級し表１に示す種々の粒度分布を有するバリ止
め剤Ａ、Ｂ、Ｃ、Ｄを製造した。バリ止め剤Ｅは日本ア
エロジル社製商品名「アエロジル」である。これらのバ
リ止め剤と基本充填材（平均粒径１７μｍの溶融シリカ
粉末）とを表２に示す割合で種々混合し充填材とした。Examples 1 to 5 Comparative Examples 1 to 5 Reference Examples 1 to 5
3 (Production of Filler) Spherical fused silica powder having an average particle size of 6.0 μm was classified to produce deburring agents A, B, C and D having various particle size distributions shown in Table 1. The deburring agent E is trade name “Aerosil” manufactured by Nippon Aerosil Co., Ltd. The deburring agent and the basic filler (fused silica powder having an average particle size of 17 μm) were mixed in various proportions shown in Table 2 to obtain a filler.
【００１６】（樹脂組成物の製造）上記で得られた充填
材３５０重量部、エポキシ当量２３０のクレゾールノボ
ラック樹脂８５重量部、臭素化エポキシ樹脂１５重量
部、フェノールノボラック型樹脂５０重量部、２−ウン
デシルイミダゾール５重量部、カルナバワックス２．５
重量部、カーボンブラック１重量部、三酸化アンチモン
１０重量部をミキシングロールで混練後冷却・粉砕して
樹脂組成物を製造した。(Production of resin composition) 350 parts by weight of the filler obtained above, 85 parts by weight of a cresol novolak resin having an epoxy equivalent of 230, 15 parts by weight of a brominated epoxy resin, 50 parts by weight of a phenol novolak type resin, 2- 5 parts by weight of undecyl imidazole, carnauba wax 2.5
Parts by weight, 1 part by weight of carbon black, and 10 parts by weight of antimony trioxide were kneaded with a mixing roll, then cooled and pulverized to produce a resin composition.
【００１７】得られた樹脂組成物について、スパイラル
フローとバリを測定した。それらの結果を表２に示す。
なお、表１及び表２に示す物性は以下に従って測定し
た。The spiral flow and burr of the obtained resin composition were measured. Table 2 shows the results.
The physical properties shown in Tables 1 and 2 were measured according to the following.
【００１８】（１）粒度分布及び平均粒径 粒度分布測定装置（シーラス社製「モデル７１５」）を
用いて１μｍと２μｍの粒度分布を測定した。また、粒
度分布の累積重量％が５０％のときの粒径を平均粒径と
した。 （２）スパイラルフロー トランスファー成形機を使用し、ＥＭＭＩ規格に準じた
金型を用いて成形温度１７５℃、成形圧力７０ｋｇ／ｃ
ｍ2 で成形し測定した。 （３）バリ ２μｍ、５μｍ、１０μｍ、３０μｍのスリットをもつ
バリ測定金型を用い、成形温度１７５℃、成形圧力１０
０ｋｇ／ｃｍ2 で成形した際にスリットに流れ出た樹脂
をノギスで測定し、それぞれのスリットで測定された値
を平均しバリ長さとした。(1) Particle Size Distribution and Average Particle Size Particle size distributions of 1 μm and 2 μm were measured using a particle size distribution measuring device (“Model 715” manufactured by Cirrus). The particle size when the cumulative weight% of the particle size distribution was 50% was defined as the average particle size. (2) Using a spiral flow transfer molding machine, a molding temperature of 175 ° C. and a molding pressure of 70 kg / c using a mold conforming to the EMMI standard.
It was molded at m 2 and measured. (3) Burrs Using a burr measurement mold having slits of 2 μm, 5 μm, 10 μm, and 30 μm, a molding temperature of 175 ° C. and a molding pressure of 10
The resin flowing out of the slits at the time of molding at 0 kg / cm 2 was measured with calipers, and the values measured in each slit were averaged to obtain a burr length.
【００１９】[0019]
【表１】 [Table 1]
【００２０】[0020]
【表２】 [Table 2]
【００２１】[0021]
【発明の効果】本発明によれば、スパイラルフローを低
下させることなくバリ止め効果の著大な半導体封止用樹
脂組成物を提供することができる。According to the present invention, it is possible to provide a resin composition for semiconductor encapsulation having a remarkable deburring effect without lowering the spiral flow.
Claims (1)
８５〜９９．５重量％と、平均粒径が０．６〜５μｍで
１μｍ以下の粒子の含有率が１０〜８０重量％でありし
かも２μｍ以下の粒子の含有率が２０〜９０重量％であ
る無機質粉末０．５〜１５重量％とからなることを特徴
とする半導体樹脂封止用充填材。1. An inorganic powder having an average particle size of 10 to 30 μm, 85 to 99.5% by weight, an average particle size of 0.6 to 5 μm and a content of particles of 1 μm or less being 10 to 80% by weight, and A filler for semiconductor resin sealing, comprising: 0.5 to 15% by weight of an inorganic powder having a content of particles of 2 μm or less of 20 to 90% by weight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7314998A JP2601255B2 (en) | 1995-12-04 | 1995-12-04 | Filler for semiconductor resin sealing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7314998A JP2601255B2 (en) | 1995-12-04 | 1995-12-04 | Filler for semiconductor resin sealing |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21650987A Division JP2505485B2 (en) | 1987-09-01 | 1987-09-01 | Additive for semiconductor resin encapsulation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08208882A true JPH08208882A (en) | 1996-08-13 |
| JP2601255B2 JP2601255B2 (en) | 1997-04-16 |
Family
ID=18060186
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7314998A Expired - Lifetime JP2601255B2 (en) | 1995-12-04 | 1995-12-04 | Filler for semiconductor resin sealing |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2601255B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003048957A (en) * | 2001-08-07 | 2003-02-21 | Sumitomo Bakelite Co Ltd | Epoxy resin composition |
| JP2005225970A (en) * | 2004-02-12 | 2005-08-25 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| JP2008248004A (en) * | 2007-03-29 | 2008-10-16 | Admatechs Co Ltd | Inorganic powder for addition to resin composition, and resin composition |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57123249A (en) * | 1981-01-26 | 1982-07-31 | Toshiba Corp | Epoxy resin molding compound |
| JPS61268750A (en) * | 1985-05-22 | 1986-11-28 | Shin Etsu Chem Co Ltd | Epoxy resin composition for semiconductor sealing use |
| JPS6274924A (en) * | 1985-09-30 | 1987-04-06 | Toshiba Corp | Epoxy resin composition for sealing semiconductor device |
-
1995
- 1995-12-04 JP JP7314998A patent/JP2601255B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57123249A (en) * | 1981-01-26 | 1982-07-31 | Toshiba Corp | Epoxy resin molding compound |
| JPS61268750A (en) * | 1985-05-22 | 1986-11-28 | Shin Etsu Chem Co Ltd | Epoxy resin composition for semiconductor sealing use |
| JPS6274924A (en) * | 1985-09-30 | 1987-04-06 | Toshiba Corp | Epoxy resin composition for sealing semiconductor device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003048957A (en) * | 2001-08-07 | 2003-02-21 | Sumitomo Bakelite Co Ltd | Epoxy resin composition |
| JP4710195B2 (en) * | 2001-08-07 | 2011-06-29 | 住友ベークライト株式会社 | Epoxy resin composition |
| JP2005225970A (en) * | 2004-02-12 | 2005-08-25 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| JP2008248004A (en) * | 2007-03-29 | 2008-10-16 | Admatechs Co Ltd | Inorganic powder for addition to resin composition, and resin composition |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2601255B2 (en) | 1997-04-16 |
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