JP2005146246A - Epoxy resin composition and semiconductor device - Google Patents
Epoxy resin composition and semiconductor device Download PDFInfo
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- JP2005146246A JP2005146246A JP2004107585A JP2004107585A JP2005146246A JP 2005146246 A JP2005146246 A JP 2005146246A JP 2004107585 A JP2004107585 A JP 2004107585A JP 2004107585 A JP2004107585 A JP 2004107585A JP 2005146246 A JP2005146246 A JP 2005146246A
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- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 79
- 239000004065 semiconductor Substances 0.000 title claims abstract description 79
- 239000003822 epoxy resin Substances 0.000 title claims abstract description 78
- 239000000203 mixture Substances 0.000 title claims abstract description 55
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000006087 Silane Coupling Agent Substances 0.000 claims abstract description 13
- 239000005011 phenolic resin Substances 0.000 claims abstract description 12
- 238000007789 sealing Methods 0.000 claims abstract description 8
- 239000002245 particle Substances 0.000 claims description 33
- 125000004432 carbon atom Chemical group C* 0.000 claims description 16
- 238000005538 encapsulation Methods 0.000 claims description 15
- 229920002545 silicone oil Polymers 0.000 claims description 15
- 238000009826 distribution Methods 0.000 claims description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims description 12
- 239000001257 hydrogen Substances 0.000 claims description 12
- 125000000217 alkyl group Chemical group 0.000 claims description 11
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 10
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 7
- 125000000962 organic group Chemical group 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 238000005476 soldering Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 18
- 229920005989 resin Polymers 0.000 description 17
- 239000011347 resin Substances 0.000 description 17
- 239000011256 inorganic filler Substances 0.000 description 15
- 229910003475 inorganic filler Inorganic materials 0.000 description 15
- 238000000465 moulding Methods 0.000 description 12
- 229910000679 solder Inorganic materials 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 8
- 229920003986 novolac Polymers 0.000 description 6
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 5
- 239000007822 coupling agent Substances 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 238000011049 filling Methods 0.000 description 5
- 230000001771 impaired effect Effects 0.000 description 5
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Natural products P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 150000002989 phenols Chemical class 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000001721 transfer moulding Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000001993 wax Substances 0.000 description 3
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 2
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- 125000002529 biphenylenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C12)* 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 239000004203 carnauba wax Substances 0.000 description 2
- 235000013869 carnauba wax Nutrition 0.000 description 2
- 239000011362 coarse particle Substances 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 239000012954 diazonium Substances 0.000 description 2
- 150000001989 diazonium salts Chemical class 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 150000003003 phosphines Chemical class 0.000 description 2
- 229920003192 poly(bis maleimide) Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000011417 postcuring Methods 0.000 description 2
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- 238000004438 BET method Methods 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 208000034189 Sclerosis Diseases 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000002156 adsorbate Substances 0.000 description 1
- 150000001343 alkyl silanes Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- TZSXPYWRDWEXHG-UHFFFAOYSA-K bismuth;trihydroxide Chemical compound [OH-].[OH-].[OH-].[Bi+3] TZSXPYWRDWEXHG-UHFFFAOYSA-K 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-O diazynium Chemical group [NH+]#N IJGRMHOSHXDMSA-UHFFFAOYSA-O 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 229910001410 inorganic ion Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000007561 laser diffraction method Methods 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- GKTNLYAAZKKMTQ-UHFFFAOYSA-N n-[bis(dimethylamino)phosphinimyl]-n-methylmethanamine Chemical compound CN(C)P(=N)(N(C)C)N(C)C GKTNLYAAZKKMTQ-UHFFFAOYSA-N 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- IYMSIPPWHNIMGE-UHFFFAOYSA-N silylurea Chemical compound NC(=O)N[SiH3] IYMSIPPWHNIMGE-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical compound S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 235000012222 talc Nutrition 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 235000010215 titanium dioxide Nutrition 0.000 description 1
- BIKXLKXABVUSMH-UHFFFAOYSA-N trizinc;diborate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]B([O-])[O-].[O-]B([O-])[O-] BIKXLKXABVUSMH-UHFFFAOYSA-N 0.000 description 1
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical compound [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 1
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical compound [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 1
- XAEWLETZEZXLHR-UHFFFAOYSA-N zinc;dioxido(dioxo)molybdenum Chemical compound [Zn+2].[O-][Mo]([O-])(=O)=O XAEWLETZEZXLHR-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Abstract
Description
本発明は、半導体封止用エポキシ樹脂組成物及び半導体装置に関するものであり、特に、プリント配線板や金属リードフレームの片面に半導体素子を搭載し、その搭載面側の実質的に片面のみが樹脂封止されたエリア実装型半導体装置に好適に用いられるものである。 The present invention relates to an epoxy resin composition for semiconductor encapsulation and a semiconductor device, and in particular, a semiconductor element is mounted on one side of a printed wiring board or a metal lead frame, and only one side of the mounting side is a resin. It is preferably used for a sealed area mounting type semiconductor device.
近年の電子機器の高機能化、高速化に伴い、その発熱量が増大傾向にある。そのため封止用エポキシ樹脂組成物に対しても高熱放散性の要求が高まっており、それを構成する無機充填材においても様々な検討が進められている。これまで高熱伝導性の無機充填材としては窒化アルミニウム、窒化ケイ素及びアルミナが主として使用されているが、いずれもエポキシ樹脂組成物としての要求特性を満足させるレベルには至っていない。窒化アルミニウム、窒化ケイ素は、それ自体が１００Ｗ／ｍ・Ｋ以上の高い熱伝導率を有するが、エポキシ樹脂組成物の流動性が極端に低下する、成形時の金型磨耗性が著しいなどの問題が懸念され、本格的に普及するまでには至っていない。これに対し、アルミナは熱伝導率こそ窒化アルミニウム、窒化ケイ素に比べて劣るものの、球状化して用いることにより流動性と金型磨耗性の観点からは比較的良好である。流動性を向上させるために粒度分布に着目した方法が提案されており、０．４〜０．７μｍ、１２〜１８μｍ、３０〜３８μｍに粒度分布の極大ピークをもたせる方法（たとえば、特許文献１参照）、ロジン・ラムラー線図の回帰式の回帰係数に着目する方法（たとえば、特許文献２参照）などがある。 With the recent increase in functionality and speed of electronic devices, the amount of generated heat tends to increase. For this reason, there is an increasing demand for high heat dissipating properties for the epoxy resin composition for sealing, and various studies are being conducted on the inorganic filler constituting the epoxy resin composition. Until now, aluminum nitride, silicon nitride, and alumina have been mainly used as inorganic fillers with high thermal conductivity, but none of them has reached a level that satisfies the required characteristics as an epoxy resin composition. Aluminum nitride and silicon nitride themselves have high thermal conductivity of 100 W / m · K or more, but the fluidity of the epoxy resin composition is extremely reduced, and the mold wear during molding is remarkable. However, it has not reached the point of widespread use. In contrast, alumina has a thermal conductivity that is inferior to that of aluminum nitride or silicon nitride, but it is relatively good in terms of fluidity and mold wear when used in a spheroidized form. In order to improve fluidity, a method focusing on the particle size distribution has been proposed, and a method of giving a maximum peak of the particle size distribution to 0.4 to 0.7 μm, 12 to 18 μm, and 30 to 38 μm (for example, see Patent Document 1). ), A method of paying attention to the regression coefficient of the regression equation of the Rosin-Rammler diagram (for example, see Patent Document 2).
近年の新たな動きとして、環境対応のため半導体装置を実装する際に従来よりも融点の高い無鉛半田の使用が高まってきている。この半田の適用により実装温度を従来に比べ約２０℃高くする必要があり、実装後の半導体装置の耐熱性が現状に比べ著しく低下する問題が生じており、向上の必要性が加速的に強くなってきている。これを解決し得る半導体装置の低応力化、低吸水化を達成するためには、更なる無機充填材の高充填化が必要となっている。 As a new movement in recent years, the use of lead-free solder having a higher melting point than before is increasing when mounting semiconductor devices for environmental reasons. The application of this solder requires that the mounting temperature be increased by about 20 ° C. compared to the conventional case, and there is a problem that the heat resistance of the semiconductor device after mounting is significantly reduced compared to the current situation. It has become to. In order to achieve low stress and low water absorption of a semiconductor device that can solve this, it is necessary to further increase the filling of the inorganic filler.
また半導体素子の高集積化が進むにつれて増加傾向にあるエリア実装型半導体装置においては、無機充填材の高充填化が更に必要になってくる。エリア実装型半導体装置としては、ＢＧＡ（ボールグリッドアレイ）、或いは更に小型化を追求したＣＳＰ（チップスケールパッケージ）等が代表的であり、これらは従来のＱＦＰ、ＳＯＰなどに代表される表面実装型半導体装置では限界に近づいている多ピン化・高速化への要求に対応するために開発されたものである。構造としては、ＢＴ樹脂／銅箔回路基板（ビスマレイミド・トリアジン樹脂／ガラスクロス基板）に代表される硬質回路基板、或いはポリイミド樹脂フィルム／銅箔回路基板に代表されるフレキシブル回路基板の片面上に半導体素子を搭載し、その半導体素子搭載面、即ち基板の片面のみがエポキシ樹脂組成物等で成形・封止されている。また、基板の半導体素子搭載面の反対面には半田ボールを２次元的に並列して形成し、回路基板と接合させる。この半導体装置を回路基板上に半田接合を行う場合、２００℃以上の加熱工程を経るが、この際に半導体装置の反りが発生すると多数の半田ボールが平坦とならず、回路基板から浮き上がってしまうため電気的接合信頼性が低下する問題が起こる。 Further, in the area mounting type semiconductor device which is increasing as the integration of semiconductor elements is increased, it is necessary to further increase the filling of the inorganic filler. Typical area-mounted semiconductor devices include BGA (ball grid array) or CSP (chip scale package) that pursues further miniaturization, and these are surface-mounted types typified by conventional QFP, SOP, and the like. The semiconductor device was developed to meet the demand for higher pin count and higher speed, which are approaching the limit. As a structure, on one side of a hard circuit board represented by BT resin / copper foil circuit board (bismaleimide / triazine resin / glass cloth board) or a flexible circuit board represented by polyimide resin film / copper foil circuit board. A semiconductor element is mounted, and only the semiconductor element mounting surface, that is, one side of the substrate is molded and sealed with an epoxy resin composition or the like. Also, solder balls are two-dimensionally formed in parallel on the surface opposite to the semiconductor element mounting surface of the substrate and bonded to the circuit substrate. When this semiconductor device is solder-bonded to a circuit board, a heating process of 200 ° C. or higher is performed. If warpage of the semiconductor device occurs at this time, a large number of solder balls do not become flat and float from the circuit board. Therefore, there arises a problem that the reliability of electrical connection is lowered.
基板上の片面のみをエポキシ樹脂組成物で封止した半導体装置において反りを低減するには、基板の熱膨張係数とエポキシ樹脂組成物の硬化物の熱膨張係数とを近づけること、及びエポキシ樹脂組成物の成形硬化時の硬化収縮を小さくすることの二つの方法が重要である。基板としては、有機基板ではＢＴ樹脂やポリイミド樹脂のような高いガラス転移温度（以下、Ｔｇという）を有する樹脂が広く用いられており、これらはエポキシ樹脂組成物の成形温度である１７０℃近辺よりも高いＴｇを有する。従って、成形温度から室温までの冷却過程では有機基板のガラス領域、換言すると線膨張係数がα１の領域のみで収縮する。よってエポキシ樹脂組成物の硬化物も、Ｔｇが成形温度より高く且つα１が有機基板と同じで、更に成形硬化時の硬化収縮がゼロとなれば、反りはほぼゼロとなると考えられる。このため、多官能型エポキシ樹脂と多官能型フェノール樹脂との組み合わせによりＴｇを高くし、無機充填材の配合量でα１を合わせる手法が既に提案されている。しかし多官能型樹脂は吸水性、粘度が高いことから金線変形、耐熱性の低下を引き起こし易いため、多官能型樹脂以外の低粘度樹脂を用い、無機充填材の高充填化によってエポキシ樹脂組成物の熱膨張係数を基板の熱膨張係数に近づけ、成形硬化時の硬化収縮を小さくする、といった手法が用いられている。 To reduce warpage in a semiconductor device in which only one surface on a substrate is sealed with an epoxy resin composition, the thermal expansion coefficient of the substrate and the thermal expansion coefficient of a cured product of the epoxy resin composition are brought close to each other, and the epoxy resin composition Two methods are important for reducing the shrinkage of the cured product when it is molded and cured. As the substrate, a resin having a high glass transition temperature (hereinafter referred to as Tg) such as BT resin and polyimide resin is widely used in the organic substrate, and these are from around 170 ° C. which is the molding temperature of the epoxy resin composition. Also has a high Tg. Accordingly, in the cooling process from the molding temperature to room temperature, the glass shrinks only in the glass region of the organic substrate, in other words, in the region where the linear expansion coefficient is α1. Therefore, it is considered that the cured product of the epoxy resin composition has almost zero warpage if Tg is higher than the molding temperature, α1 is the same as that of the organic substrate, and curing shrinkage at the time of molding and curing is zero. For this reason, a technique for increasing Tg by combining a polyfunctional epoxy resin and a polyfunctional phenol resin and adjusting α1 with the blending amount of the inorganic filler has already been proposed. However, since polyfunctional resins have high water absorption and viscosity, they tend to cause deformation of the gold wire and decrease in heat resistance. Therefore, low viscosity resins other than polyfunctional resins are used, and the epoxy resin composition is increased by increasing the filling of inorganic fillers. A technique has been used in which the thermal expansion coefficient of an object is brought close to the thermal expansion coefficient of a substrate to reduce curing shrinkage during molding and curing.
これらの背景により、前述の様なアルミナを高充填した樹脂成形材料の流動性を向上させる様々な手法、換言するとアルミナをより多く充填できる手法が提案されているが、アルミナ以外のエポキシ樹脂組成物の構成原料には着目していないために十分な性能が得られず、市場の要求を満足させるレベルには至っていない。 Based on these backgrounds, various methods for improving the fluidity of the resin molding material highly filled with alumina as described above, in other words, a method capable of filling more alumina, are proposed. Epoxy resin compositions other than alumina are proposed. Since it does not pay attention to the constituent raw materials of the above, sufficient performance cannot be obtained, and it does not reach a level that satisfies market demands.
本発明は、従来の背景技術の問題点を解決するためになされたものであり、その目的とするところは硬化性及び他の諸特性を劣化させることなく流動性、成形後や実装時の半導体装置の反り、耐半田性を向上させた半導体封止用に適したエポキシ樹脂組成物、及びこれを用いた半導体装置を提供することにある。 The present invention has been made in order to solve the problems of the conventional background art, and the object of the present invention is fluidity without deterioration of curability and other characteristics, semiconductor after molding and mounting An object of the present invention is to provide an epoxy resin composition suitable for semiconductor encapsulation with improved warpage and solder resistance, and a semiconductor device using the same.
本発明は、
［１］ エポキシ樹脂（Ａ）、フェノール樹脂（Ｂ）、一般式（１）で示される硬化促進剤（Ｃ）、一般式（２）で示されるシランカップリング剤（Ｄ）、及び球状アルミナ（Ｅ）を含むことを特徴とする半導体封止用エポキシ樹脂組成物、
The present invention
[1] Epoxy resin (A), phenol resin (B), curing accelerator (C) represented by general formula (1), silane coupling agent (D) represented by general formula (2), and spherical alumina ( E) containing an epoxy resin composition for semiconductor encapsulation,
［２］ 全エポキシ樹脂組成物中に、更に０．０５〜０．５重量％のシリコーンオイル（Ｆ）を含有する第［１］項記載の半導体封止用エポキシ樹脂組成物、
［３］ 前記球状アルミナ（Ｅ）の粒度分布が、０．５〜１μｍ、３〜８μｍ、３６〜５０μｍに極大点を有する第［１］又は［２］項記載の半導体封止用エポキシ樹脂組成物、
［４］ 第［１］、［２］又は［３］項のいずれかに記載のエポキシ樹脂組成物を用いて半導体素子を封止してなることを特徴とする半導体装置、
[2] The epoxy resin composition for semiconductor encapsulation according to item [1], further containing 0.05 to 0.5% by weight of silicone oil (F) in the total epoxy resin composition,
[3] The epoxy resin composition for semiconductor encapsulation according to [1] or [2], wherein the particle size distribution of the spherical alumina (E) has a maximum point at 0.5 to 1 μm, 3 to 8 μm, or 36 to 50 μm. Stuff,
[4] A semiconductor device comprising a semiconductor element sealed with the epoxy resin composition according to any one of [1], [2] or [3],
［５］ 基板の片面に半導体素子が搭載され、この半導体素子が搭載された基板面側の実質的に片面のみの封止に用いるものであって、エポキシ樹脂（Ａ）、フェノール樹脂（Ｂ）、一般式（１）で示される硬化促進剤（Ｃ）、一般式（２）で示されるシランカップリング剤（Ｄ）、球状アルミナ（Ｅ）を含むことを特徴とするエリア実装型半導体封止用エポキシ樹脂組成物、 [5] A semiconductor element is mounted on one side of a substrate, and is used for sealing only substantially on one side of the substrate surface on which the semiconductor element is mounted. The epoxy resin (A) and the phenol resin (B) An area-mounting type semiconductor encapsulation comprising: a curing accelerator (C) represented by the general formula (1); a silane coupling agent (D) represented by the general formula (2); and a spherical alumina (E). Epoxy resin composition for
［６］ 全エポキシ樹脂組成物中に、更に０．０５〜０．５重量％のシリコーンオイル（Ｆ）を含有する第［５］項記載の半導体封止用エポキシ樹脂組成物、
［７］ 球状アルミナ（Ｅ）の粒度分布が、０．５〜１μｍ、３〜８μｍ、３６〜５０μｍに極大点を有する第［５］又は［６］項記載の半導体封止用エポキシ樹脂組成物、
［８］ 基板の片面に半導体素子が搭載され、この半導体素子が搭載された基板面側の実質的に片面のみが第［５］、［６］又は［７］項のいずれかに記載のエポキシ樹脂組成物を用いて封止されていることを特徴とするエリア実装型半導体装置、
である。
[6] The epoxy resin composition for semiconductor encapsulation according to item [5], further containing 0.05 to 0.5% by weight of silicone oil (F) in the total epoxy resin composition,
[7] The epoxy resin composition for semiconductor encapsulation according to [5] or [6], wherein the spherical alumina (E) has a maximum particle size distribution of 0.5 to 1 μm, 3 to 8 μm, and 36 to 50 μm. ,
[8] A semiconductor element is mounted on one side of a substrate, and substantially only one side of the substrate surface side on which the semiconductor element is mounted is the epoxy according to any one of [5], [6], or [7]. An area-mounting semiconductor device characterized by being sealed with a resin composition;
It is.
本発明に従うと、従来の技術では得られなかった流動性、反り、耐半田性における性能を向上させることが出来るので、特にエリア実装型半導体封止用エポキシ樹脂組成物及びこれを用いた半導体装置として好適である。 According to the present invention, it is possible to improve performance in fluidity, warpage, and solder resistance, which could not be obtained with the prior art, and in particular, an epoxy resin composition for area mounting type semiconductor encapsulation and a semiconductor device using the same It is suitable as.
本発明は、エポキシ樹脂、フェノール樹脂、特定構造の硬化促進剤、特定構造のシランカップリング剤、球状アルミナを含むエポキシ樹脂組成物を用いることにより、エポキシ樹脂組成物の低粘度化が可能となるため、無機充填材をより多く充填できるようになる。これによって流動性、反り、耐半田性の性能を向上できるという効果が得られるものである。更に前記手法により反りを低減できるため、低反り化のために多量添加を必要としていたシリコーンオイルの添加量を抑制することが可能となる。その結果、耐湿性低下を防止できるという効果も得られるものである。
以下、本発明について詳細に説明する。
In the present invention, by using an epoxy resin composition containing an epoxy resin, a phenol resin, a curing accelerator having a specific structure, a silane coupling agent having a specific structure, and spherical alumina, the viscosity of the epoxy resin composition can be reduced. Therefore, more inorganic fillers can be filled. As a result, the effect of improving the fluidity, warpage, and solder resistance performance can be obtained. Further, since the warpage can be reduced by the above-described method, it is possible to suppress the amount of silicone oil added that requires a large amount of addition to reduce warpage. As a result, the effect of preventing a decrease in moisture resistance can also be obtained.
Hereinafter, the present invention will be described in detail.
本発明に用いるエポキシ樹脂は、１分子内にエポキシ基を２個以上有するモノマー、オリゴマー、ポリマー全般であり、その分子量、分子構造は特に限定するものではないが、例えば、ビフェニル型エポキシ樹脂、ビスフェノールＡ型エポキシ樹脂、ビスフェノールＦ型エポキシ樹脂、ビフェニレン骨格含有フェノールアラルキル型エポキシ樹脂、スチルベン型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、オルソクレゾールノボラック型エポキシ樹脂、ナフトールノボラック型エポキシ樹脂、トリフェノールメタン型エポキシ樹脂、ジシクロベンタジエン変性フェノール型エポキシ樹脂、テルペン変性フェノール型エポキシ樹脂、ハイドロキノン型エポキシ樹脂などが挙げられる。またこれらは単独でも混合して用いてもよい。なお無機充填材を高充填化する、という観点では、常温で固形、かつ成形時の溶融粘度が非常に低い結晶性エポキシ樹脂を用いることが好ましい。 Epoxy resins used in the present invention are monomers, oligomers, and polymers in general having two or more epoxy groups in one molecule, and their molecular weight and molecular structure are not particularly limited. For example, biphenyl type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, biphenylene skeleton-containing phenol aralkyl type epoxy resin, stilbene type epoxy resin, phenol novolac type epoxy resin, orthocresol novolac type epoxy resin, naphthol novolak type epoxy resin, triphenolmethane type epoxy resin , Dicyclopentadiene-modified phenol type epoxy resin, terpene-modified phenol type epoxy resin, hydroquinone type epoxy resin, and the like. These may be used alone or in combination. In view of increasing the inorganic filler, it is preferable to use a crystalline epoxy resin that is solid at room temperature and has a very low melt viscosity at the time of molding.
本発明に用いるフェノール樹脂は、１分子内にフェノール性水酸基を２個以上有するモノマー、オリゴマー、ポリマー全般であり、その分子量、分子構造を特に限定するものではないが、例えば、フェノールノボラック樹脂、クレゾールノボラック樹脂、ジシクロベンタジエン変性フェノール樹脂、フェノールアラルキル樹脂、ビフェニレン骨格を有するフェノールアラルキル樹脂、テルペン変性フェノール樹脂、トリフェノールメタン型樹脂などが挙げられる。またこれらは単独でも混合して用いてもよい。なお無機充填材を高充填化する、という観点では、エポキシ樹脂と同様に低粘度のものが好ましい。 The phenol resin used in the present invention is a monomer, oligomer, or polymer in general having two or more phenolic hydroxyl groups in one molecule, and its molecular weight and molecular structure are not particularly limited. For example, phenol novolak resin, cresol Examples thereof include novolak resins, dicyclopentadiene-modified phenol resins, phenol aralkyl resins, phenol aralkyl resins having a biphenylene skeleton, terpene-modified phenol resins, and triphenolmethane type resins. These may be used alone or in combination. In addition, from the viewpoint of increasing the inorganic filler, a material having a low viscosity is preferable like the epoxy resin.
本発明に用いる全エポキシ樹脂のエポキシ基数と全フェノール樹脂のフェノール性水酸基数の当量比としては、好ましくは０．５〜２であり、特に０．７〜１．５がより好ましい。上記範囲を外れると、耐湿性、硬化性などが低下する恐れがあるので好ましくない。 The equivalent ratio of the number of epoxy groups of all epoxy resins and the number of phenolic hydroxyl groups of all phenol resins used in the present invention is preferably 0.5 to 2, and more preferably 0.7 to 1.5. If it is out of the above range, the moisture resistance, curability and the like may be lowered, which is not preferable.
本発明に用いる一般式（１）で示される硬化促進剤を使用すると、従来の硬化促進剤よりもエポキシ樹脂組成物の低粘度化が可能となるため、無機充填材をより多く充填させ易くなり、その結果半導体装置の反り及び耐半田性を向上させることができる。一般式（１）で示される硬化促進剤は、例えば第三ホスフィンであるトリ芳香族置換ホスフィンとジアゾニウム塩とを接触させ、前記トリ芳香族置換ホスフィンと前記ジアゾニウム塩が有するジアゾニウム基とを置換させる工程を経て得られる。しかしこれに限定されるものではない。一般式（１）に示す化合物としては、好ましくはＸが水素又はメチル基であり、かつＹが水素又はヒドロキシル基であるものが好ましい。しかしこれらに限定されるものではなく、また単独で用いても併用してもよい。本発明に用いる硬化促進剤の配合量は、全エポキシ樹脂組成物中に０．０５〜０．３重量％が好ましく、下限値未満だと目的とする硬化性が得られず、上限値を越えると流動性が損なわれるおそれがあり好ましくない。
本発明に用いられる一般式（２）で示されるシランカップリング剤を使用すると、従来のシランカップリング剤よりもエポキシ樹脂組成物の低粘度化が可能となるため、無機充填材をより多く充填させ易くなり、その結果半導体装置の反り及び耐半田性を向上させることができる。本発明に用いる一般式（２）で示されるシランカップリング剤は、好ましくはＲ１がフェニル基であり、Ｒ２が炭素数１〜３のアルキル基、かつＲ３、Ｒ４はメチル基もしくはエチル基であることが好ましい。しかしこれらに限定されるものではなく、また単独で用いても併用してもよい。本発明に用いるシランカップリング剤の配合量は、全エポキシ樹脂組成物中に０．０５〜０．５重量％が好ましく、下限値未満だと目的とする流動性が得られず、上限値を超えると硬化性が損なわれるおそれがあり好ましくない。また、一般式（２）で示されるシランカップリング剤を用いることによる効果を損なわない範囲であれば、その他のカップリング剤を併用しても差し支えない。併用できるカップリング剤としては、例えば、エポキシシラン、メルカプトシラン、アミノシラン、アルキルシラン、ウレイドシラン、ビニルシラン等のシランカップリング剤や、チタネートカップリング剤、アルミニウムカップリング剤、アルミニウム／ジルコニウムカップリング剤等が挙げられる。
本発明においては、高熱伝導性を付与する目的で、充填材として球状アルミナを用いる。本発明に用いる球状アルミナの粒度分布は特に規定しないが、粒度分布の極大点を０．５〜１μｍ（以下微粒子と記載する。）、３〜８μｍ（以下中粒子と記載する。）、３６〜５０μｍ（以下粗粒子と記載する。）に有することが好ましい。微粒子の極大点が０．５μｍ未満もしくは１μｍを超えると流動性を損なう場合があり、また中粒子の極大点が３μｍ未満もしくは８μｍを超えると、同様に流動性を損なう場合がある。なお粗粒子については、極大点が５０μｍを超えると、狭い充填領域が存在する小型半導体装置において未充填を引き起こす、及び金線間隔の狭い半導体装置において流動を阻害し、金線変形を引き起こす懸念が生じる。なお、本発明では、充填材として球状アルミナを単独で用いる必要はなく、例えば、溶融球状シリカ、溶融破砕シリカ、結晶シリカ、タルク、チタンホワイト、窒化珪素等と併用してもよい。本発明に用いる球状アルミナの配合量は、全エポキシ樹脂組成物中に８５〜９３重量％が好ましく、下限値未満だと目的とする熱伝導性が得られず、上限値を超えると流動性が損なわれるおそれがあり好ましくない。 In the present invention, spherical alumina is used as a filler for the purpose of imparting high thermal conductivity. The particle size distribution of the spherical alumina used in the present invention is not particularly defined, but the maximum point of the particle size distribution is 0.5 to 1 μm (hereinafter referred to as fine particles), 3 to 8 μm (hereinafter referred to as medium particles), 36 to. It is preferable to have a thickness of 50 μm (hereinafter referred to as coarse particles). If the maximum point of the fine particles is less than 0.5 μm or exceeds 1 μm, the fluidity may be impaired, and if the maximum point of the medium particles is less than 3 μm or more than 8 μm, the fluidity may be similarly impaired. Regarding coarse particles, when the maximum point exceeds 50 μm, there is a concern that unfilling may occur in a small semiconductor device having a narrow filling region, and flow may be hindered in a semiconductor device having a narrow interval between gold wires, thereby causing deformation of the gold wire. Arise. In the present invention, spherical alumina does not need to be used alone as a filler, and may be used in combination with, for example, fused spherical silica, fused crushed silica, crystalline silica, talc, titanium white, or silicon nitride. The blend amount of the spherical alumina used in the present invention is preferably 85 to 93% by weight in the total epoxy resin composition, and if it is less than the lower limit, the intended thermal conductivity cannot be obtained, and if it exceeds the upper limit, the fluidity is There is a possibility that it may be damaged.
ここでの球状アルミナの粒度分布は、ＪＩＳ Ｍ８１００粉塊混合物−サンプリング方法通則に準じて無機充填材を採取し、ＪＩＳ Ｒ １６２２−１９９５ ファインセラミック原料粒子径分布測定のための試料調整通則に準じて、無機充填材を測定用試料として調整し、ＪＩＳ Ｒ １６２９−１９９７ファインセラミック原料のレーザー回折・散乱法による粒子径分布測定方法に準じて（株）島津製作所製のレーザー回折式粒度分布測定装置ＳＡＬＤ−７０００（レーザー波長：４０５ｎｍ）を用いて、溶媒に水を用い無機充填材の屈折率が実数部１．８０、虚数部１．００の条件のもと測定した値である。
また比表面積は、ＪＩＳ Ｒ １６２６−１９９６ ファインセラミックス粉体の気体吸着ＢＥＴ法による比表面積の測定方法に準じて、窒素を吸着質として用い、ＢＥＴ１点法によって測定した値である。
Here, the particle size distribution of the spherical alumina is obtained according to JIS R 1622-1995 Sample preparation general rules for fine ceramic raw material particle size distribution measurement after collecting inorganic fillers according to JIS M8100 lump mixture-sampling method general rules. In addition, an inorganic filler was prepared as a measurement sample, and a laser diffraction particle size distribution measuring device SALD manufactured by Shimadzu Corporation in accordance with a particle size distribution measuring method by a laser diffraction / scattering method of a JIS R 1629-1997 fine ceramic raw material. -7000 (laser wavelength: 405 nm) using water as a solvent and the refractive index of the inorganic filler measured under the conditions of a real part 1.80 and an imaginary part 1.00.
The specific surface area is a value measured by the BET 1-point method using nitrogen as an adsorbate in accordance with the method for measuring the specific surface area of the fine ceramic powder by the gas adsorption BET method of JIS R 1626-1996.
本発明においては、上記成分に加え、更にシリコーンオイルを全エポキシ樹脂組成物に対し０．０５〜０．５重量％添加することができる。本発明に用いるシリコーンオイルは、特に平均重合度に制約は無く、エポキシ樹脂、フェノール樹脂、無機充填材との親和性を付与するために、メチル基、フェニル基の他にＣ、Ｏ、Ｎ、Ｓ原子などを含む有機基を有していても構わない。またシリコーンオイルは単独で用いても２種類以上を混合して用いてもよい。シリコーンオイルを添加することにより、成形時の金型離型性が付与され、シリコーンオイルの種類、添加量によっては低弾性化が可能となるため、半導体装置の反りを低減し、温度サイクル試験時に発生する応力を緩和する効果が得られる。しかしシリコーンオイルの配合量が、上記上限値を超えると、シリコーンオイルの種類によってはガラス転移温度の低下、半導体装置内の部材との界面密着力低下による耐湿性の低下を招きやすくなるので好ましくない。 In the present invention, in addition to the above components, 0.05 to 0.5% by weight of silicone oil can be added to the total epoxy resin composition. The silicone oil used in the present invention is not particularly limited in the average degree of polymerization, and in order to impart affinity with epoxy resin, phenol resin, and inorganic filler, in addition to methyl group and phenyl group, C, O, N, You may have an organic group containing S atom etc. Silicone oils may be used alone or in combination of two or more. By adding silicone oil, mold releasability at the time of molding is given, and depending on the type and amount of silicone oil, low elasticity can be achieved, reducing the warpage of the semiconductor device and during temperature cycle testing An effect of relaxing the generated stress can be obtained. However, if the amount of silicone oil exceeds the upper limit, depending on the type of silicone oil, it is not preferable because it tends to cause a decrease in glass transition temperature and a decrease in moisture resistance due to a decrease in interfacial adhesion with members in a semiconductor device. .
本発明のエポキシ樹脂組成物は、（Ａ）〜（Ｆ）成分の他、必要に応じてカルナバワックス等の天然ワックス、ポリエチレンワックス等の合成ワックス、ステアリン酸やステアリン酸亜鉛等の高級脂肪酸及びその金属塩類若しくはパラフィン等の離型剤、カーボンブラック、ベンガラ等の着色剤、臭素化エポキシ樹脂、三酸化アンチモン、水酸化アルミニウム、水酸化マグネシウム、硼酸亜鉛、モリブデン酸亜鉛、フォスファゼン等の難燃剤、酸化ビスマス水和物等の無機イオン交換体、酸化防止剤等の各種添加剤が適宜配合可能である。 The epoxy resin composition of the present invention comprises components (A) to (F), a natural wax such as carnauba wax, a synthetic wax such as polyethylene wax, a higher fatty acid such as stearic acid and zinc stearate, and the like, if necessary Release agents such as metal salts or paraffin, colorants such as carbon black and bengara, brominated epoxy resins, antimony trioxide, aluminum hydroxide, magnesium hydroxide, zinc borate, zinc molybdate, phosphazene and other flame retardants, oxidation Various additives such as inorganic ion exchangers such as bismuth hydrate and antioxidants can be appropriately blended.
本発明のエポキシ樹脂組成物は、（Ａ）〜（Ｆ）成分、及びその他の添加剤等を、ミキサー等を用いて常温混合し、ロール、ニーダー、押出機等の混練機で加熱混練、冷却後粉砕して得られる。 In the epoxy resin composition of the present invention, the components (A) to (F) and other additives are mixed at room temperature using a mixer or the like, heated and kneaded with a kneader such as a roll, kneader, or extruder, and cooled. Obtained by post-grinding.
本発明のエポキシ樹脂組成物を用いて、半導体素子等の電子部品を封止し、半導体装置を製造するには、トランスファーモールド、コンプレッションモールド、インジェクションモールド等の従来からの成形方法で硬化成形すればよい。その他の半導体装置の製造方法は、公知の方法を用いることができる。 In order to seal an electronic component such as a semiconductor element and manufacture a semiconductor device using the epoxy resin composition of the present invention, it can be cured by a conventional molding method such as transfer molding, compression molding, injection molding, etc. Good. As other semiconductor device manufacturing methods, known methods can be used.
以下に、実施例を挙げて本発明を説明するが、これらの実施例に限定されるものではない。配合割合は重量部とする。
実施例１
ビフェニル型エポキシ樹脂（ジャパンエポキシレジン（株）製、ＹＸ４０００Ｋ、融点１０５℃、エポキシ当量１８５） ４．４６重量部
フェノールノボラック樹脂（軟化点８０℃、水酸基当量１０５） １．６７重量部
ビフェニレン骨格を有するフェノールアラルキル樹脂（明和化成（株）製、ＭＥＨ−７８５１ＳＳ、軟化点６５℃、水酸基当量２０３） １．６７重量部
EXAMPLES The present invention will be described below with reference to examples, but the present invention is not limited to these examples. The blending ratio is parts by weight.
Example 1
Biphenyl type epoxy resin (manufactured by Japan Epoxy Resin Co., Ltd., YX4000K, melting point 105 ° C., epoxy equivalent 185) 4.46 parts by weight Phenol novolac resin (softening point 80 ° C., hydroxyl group equivalent 105) 1.67 parts by weight Biphenylene skeleton Phenol aralkyl resin (Maywa Kasei Co., Ltd., MEH-7851SS, softening point 65 ° C., hydroxyl group equivalent 203) 1.67 parts by weight
式（３）で示される硬化促進剤 ０．２０重量部
式（４）で示されるシランカップリング剤 ０．２０重量部
アルミナＢ（平均粒径３８μｍ、比表面積０．１ｍ2／ｇ、極大点粒径３８μｍ）
５５．００重量部
アルミナＦ（平均粒径３μｍ、比表面積０．８ｍ2／ｇ、極大点粒径３μｍ）
２２．５０重量部
アルミナＩ（平均粒径０．７μｍ、比表面積６．３ｍ2／ｇ、極大点粒径０．７μｍ）
１０．００重量部
シリカＡ（平均粒径０．５μｍ、比表面積６．５ｍ2／ｇ） ３．００重量部
シリカＢ（一次粒子１２ｎｍ、比表面積２００ｍ2／ｇ） ０．５０重量部
Alumina B (average particle size 38 μm, specific surface area 0.1 m 2 / g, maximum point particle size 38 μm)
55.00 parts by weight Alumina F (average particle size 3 μm, specific surface area 0.8 m 2 / g, maximum point particle size 3 μm)
22.50 parts by weight Alumina I (average particle size 0.7 μm, specific surface area 6.3 m 2 / g, maximum point particle size 0.7 μm)
10.00 parts by weight Silica A (average particle size 0.5 μm, specific surface area 6.5 m 2 / g) 3.00 parts by weight Silica B (primary particles 12 nm, specific surface area 200 m 2 / g) 0.50 parts by weight
式（５）で示されるシリコーンオイル ０．３０重量部
カルナバワックス ０．２０重量部
カーボンブラック ０．３０重量部
をミキサーで混合した後、表面温度が９０℃と４５℃の２本ロールを用いて混練し、冷却後粉砕してエポキシ樹脂組成物とした。得られたエポキシ樹脂組成物を以下の方法で評価した。結果を表１に示す。
Carnauba wax 0.20 part by weight Carbon black 0.30 part by weight was mixed with a mixer, then kneaded using two rolls with surface temperatures of 90 ° C. and 45 ° C., cooled and ground to obtain an epoxy resin composition. . The obtained epoxy resin composition was evaluated by the following methods. The results are shown in Table 1.
評価方法
スパイラルフロー：ＥＭＭＩ−１−６６に準じたスパイラルフロー測定用の金型を用い、金型温度１７５℃、注入圧力６．９ＭＰａ、硬化時間２分で測定した。単位はｃｍ。
Evaluation method Spiral flow: Using a mold for spiral flow measurement according to EMMI-1-66, measurement was performed at a mold temperature of 175 ° C., an injection pressure of 6.9 MPa, and a curing time of 2 minutes. The unit is cm.
パッケージ反り量：トランスファー成形機を用い、金型温度１７５℃、注入圧力６．９ＭＰａ、硬化時間２分で３５２ピンＢＧＡ（基板は厚さ０．５６ｍｍのビスマレイミド・トリアジン樹脂／ガラスクロス基板、半導体装置のサイズは３０ｍｍ×３０ｍｍ、厚さ１．１７ｍｍ、半導体素子のサイズ１０ｍｍ×１０ｍｍ、厚さ０．３５ｍｍ、半導体素子と回路基板のボンディングパッドを２５μｍ径の金線でボンディングしている。）を成形し、１７５℃、２時間で後硬化してサンプルを得た。得られた半導体装置各１０個を室温に冷却後、パッケージのゲートから対角線方向に、表面粗さ計を用いて高さ方向の変位を測定し、変異差の最も大きい値を反り量とした。単位はμｍ。 Package warpage amount: Using a transfer molding machine, mold temperature of 175 ° C., injection pressure of 6.9 MPa, curing time of 2 minutes, 352 pin BGA (substrate is bismaleimide / triazine resin / glass cloth substrate with a thickness of 0.56 mm, semiconductor The size of the device is 30 mm × 30 mm, the thickness is 1.17 mm, the size of the semiconductor element is 10 mm × 10 mm, the thickness is 0.35 mm, and the bonding pad of the semiconductor element and the circuit board is bonded with a 25 μm diameter gold wire. A sample was obtained by molding and post-curing at 175 ° C. for 2 hours. After 10 semiconductor devices obtained were cooled to room temperature, the displacement in the height direction was measured using a surface roughness meter in the diagonal direction from the gate of the package, and the value with the largest variation difference was taken as the amount of warpage. The unit is μm.
金線変形率：パッケージ反り量の評価で成形した３５２ピンＢＧＡパッケージを軟Ｘ線透視装置で観察し、金線の変形率を（流れ量）／（金線長）の比率で表した。単位は％。 Gold wire deformation rate: A 352-pin BGA package molded by evaluation of the amount of warpage of the package was observed with a soft X-ray fluoroscope, and the deformation rate of the gold wire was expressed as a ratio of (flow amount) / (gold wire length). Units%.
バリ長さ：パッケージ反り量の評価で成形した３５２ピンＢＧＡパッケージの約３０μｍ厚のベント部から漏れる樹脂バリの長さを測定した。単位はｍｍ。 Burr length: The length of the resin burr leaking from the vent part having a thickness of about 30 μm of the 352-pin BGA package formed by the evaluation of the amount of warping of the package was measured. The unit is mm.
耐半田性：パッケージ反り量の評価で成形した３５２ピンＢＧＡパッケージを１７５℃、２時間で後硬化し、得られた半導体装置各１０個を、６０℃、相対湿度６０％の環境下で１６８時間、又は８５℃、相対湿度６０％の環境下で１６８時間処理した後、ピーク温度２６０℃のＩＲリフロー処理（２５５℃以上が１０秒）を行った。処理後の内部の剥離及びクラックの有無を超音波探傷機で観察し、不良半導体装置の個数を数えた。不良半導体装置の個数がｎ個であるとき、ｎ／１０と表示した。 Solder resistance: 352-pin BGA package molded by evaluation of package warpage amount is post-cured at 175 ° C. for 2 hours, and each of the obtained 10 semiconductor devices is 168 hours in an environment of 60 ° C. and 60% relative humidity. Or, after being treated for 168 hours in an environment of 85 ° C. and 60% relative humidity, IR reflow treatment (255 ° C. or more is 10 seconds) at a peak temperature of 260 ° C. was performed. The presence or absence of internal peeling and cracks after the treatment was observed with an ultrasonic flaw detector, and the number of defective semiconductor devices was counted. When the number of defective semiconductor devices was n, it was displayed as n / 10.
耐湿性：トランスファー成形機を用い、金型温度１７５℃、注入圧９．８ＭＰａ、硬化時間２分で１６ｐＳＯＰ（モールドサイズ１１ｍｍ×７ｍｍ、厚さ１．９５ｍｍ、半導体素子サイズ３．５ｍｍ×３．０ｍｍ、厚さ０．４８ｍｍ、半導体素子のボンディングパッドと４２アロイフレームを２５μｍ径の金線で１２箇所ボンディングしている。半導体素子はアルミ配線幅１０μｍ、配線間距離１０μｍ、アルミ蒸着厚み１μｍ。）を成形し、１７５℃、２時間で後硬化してサンプルを得た。得られた半導体装置１５個を室温に冷却後、１４０℃、相対湿度８５％の環境下で２０Ｖ印加（ボンディングした１２箇所のうち６箇所を陽極、６箇所を陰極）、５００Ｈｒ処理してからパッケージを取り出し、各々の端子にテスターを当てて回路の抵抗値を測定した。抵抗値が初期値の２００％を超えたものを不良とし、不良箇所がｎ箇所であるときｎ／１５と表示した（陽極：３箇所×５個、陰極：３箇所×５個）。 Moisture resistance: Using a transfer molding machine, mold temperature of 175 ° C., injection pressure of 9.8 MPa, curing time of 2 minutes, 16 pSOP (mold size 11 mm × 7 mm, thickness 1.95 mm, semiconductor element size 3.5 mm × 3.0 mm The semiconductor element bonding pad and 42 alloy frame are bonded to each other at 12 locations with a 25 μm diameter gold wire. The semiconductor element has an aluminum wiring width of 10 μm, an inter-wiring distance of 10 μm, and an aluminum deposition thickness of 1 μm. A sample was obtained by molding and post-curing at 175 ° C. for 2 hours. After 15 semiconductor devices obtained were cooled to room temperature, 20 V was applied in an environment of 140 ° C. and 85% relative humidity (6 out of 12 bonded portions were anodes and 6 portions were cathodes), treated for 500 hours, and then packaged. The resistance value of the circuit was measured by applying a tester to each terminal. When the resistance value exceeded 200% of the initial value, it was regarded as defective, and indicated as n / 15 when there were n defective portions (anode: 3 locations × 5, cathode: 3 locations × 5).
実施例１〜１６、比較例１〜３
表１、表２の配合に従い、実施例１と同様にしてエポキシ樹脂組成物を得、同様に評価した。これらの評価結果を表１、表２に示す。
実施例１以外で用いたアルミナ、シリコーンオイルを以下に示す。
アルミナＡ（平均粒径３３μｍ、比表面積０．３ｍ2／ｇ、極大点粒径３３μｍ）
アルミナＣ（平均粒径４９μｍ、比表面積０．１ｍ2／ｇ、極大点粒径４９μｍ）
アルミナＤ（平均粒径５５μｍ、比表面積０．１ｍ2／ｇ、極大点粒径５５μｍ）
アルミナＥ（平均粒径１．５μｍ、比表面積５．０ｍ2／ｇ、極大点粒径１．５μｍ）
アルミナＧ（平均粒径７μｍ、比表面積０．４ｍ2／ｇ、極大点粒径７μｍ）
アルミナＨ（平均粒径１０μｍ、比表面積０．４ｍ2／ｇ、極大点粒径１０μｍ）
式（６）で示されるシリコーンオイル
According to the composition of Table 1 and Table 2, an epoxy resin composition was obtained in the same manner as in Example 1 and evaluated in the same manner. These evaluation results are shown in Tables 1 and 2.
Alumina and silicone oil used in other than Example 1 are shown below.
Alumina A (average particle size 33 μm, specific surface area 0.3 m 2 / g, maximum point particle size 33 μm)
Alumina C (average particle size 49 μm, specific surface area 0.1 m 2 / g, maximum point particle size 49 μm)
Alumina D (average particle size 55 μm, specific surface area 0.1 m 2 / g, maximum point particle size 55 μm)
Alumina E (average particle size 1.5 μm, specific surface area 5.0 m 2 / g, maximum point particle size 1.5 μm)
Alumina G (average particle size 7 μm, specific surface area 0.4 m 2 / g, maximum point particle size 7 μm)
Alumina H (average particle size 10 μm, specific surface area 0.4 m 2 / g, maximum point particle size 10 μm)
Silicone oil represented by formula (6)
本発明の半導体封止用エポキシ樹脂組成物は、流動性、反り、耐半田性、耐湿性に優れたものであり、これらの特性が要求される分野、例えばエリア実装型半導体装置等への適用が有用である。
The epoxy resin composition for semiconductor encapsulation of the present invention is excellent in fluidity, warpage, solder resistance and moisture resistance, and is applied to fields requiring these characteristics, such as area mounting type semiconductor devices. Is useful.
Claims (8)
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006199758A (en) * | 2005-01-18 | 2006-08-03 | Sumitomo Bakelite Co Ltd | Liquid sealing resin composition for semiconductor and semiconductor device sealed therewith |
| JP2007016087A (en) * | 2005-07-06 | 2007-01-25 | Kyocera Chemical Corp | Resin composition for sealing optical semiconductor and optical semiconductor device |
| JP2008013759A (en) * | 2006-06-07 | 2008-01-24 | Sumitomo Chemical Co Ltd | Epoxy resin composition and epoxy resin cured product |
| WO2019131670A1 (en) * | 2017-12-28 | 2019-07-04 | 日立化成株式会社 | Sealing composition and semiconductor device |
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| JPH07278415A (en) * | 1994-04-13 | 1995-10-24 | Shin Etsu Chem Co Ltd | Resin composition for semiconductor sealing and semiconductor device sealed therewith |
| JP2000063491A (en) * | 1998-08-24 | 2000-02-29 | Hitachi Chem Co Ltd | Epoxy resin molding material for sealing and electronic part device |
| JP2001158614A (en) * | 1999-12-01 | 2001-06-12 | Denki Kagaku Kogyo Kk | Spherical inorganic powder and use thereof |
| WO2002024808A1 (en) * | 2000-09-25 | 2002-03-28 | Hitachi Chemical Co., Ltd. | Epoxy resin molding material for sealing |
| JP2003146648A (en) * | 2001-11-15 | 2003-05-21 | Denki Kagaku Kogyo Kk | Spheroidal inorganic powder, and resin composition filled with the same |
| JP2003289123A (en) * | 2000-09-25 | 2003-10-10 | Hitachi Chem Co Ltd | Use of epoxy resin molding material for sealing |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH07278415A (en) * | 1994-04-13 | 1995-10-24 | Shin Etsu Chem Co Ltd | Resin composition for semiconductor sealing and semiconductor device sealed therewith |
| JP2000063491A (en) * | 1998-08-24 | 2000-02-29 | Hitachi Chem Co Ltd | Epoxy resin molding material for sealing and electronic part device |
| JP2001158614A (en) * | 1999-12-01 | 2001-06-12 | Denki Kagaku Kogyo Kk | Spherical inorganic powder and use thereof |
| WO2002024808A1 (en) * | 2000-09-25 | 2002-03-28 | Hitachi Chemical Co., Ltd. | Epoxy resin molding material for sealing |
| JP2003289123A (en) * | 2000-09-25 | 2003-10-10 | Hitachi Chem Co Ltd | Use of epoxy resin molding material for sealing |
| JP2003146648A (en) * | 2001-11-15 | 2003-05-21 | Denki Kagaku Kogyo Kk | Spheroidal inorganic powder, and resin composition filled with the same |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006199758A (en) * | 2005-01-18 | 2006-08-03 | Sumitomo Bakelite Co Ltd | Liquid sealing resin composition for semiconductor and semiconductor device sealed therewith |
| JP2007016087A (en) * | 2005-07-06 | 2007-01-25 | Kyocera Chemical Corp | Resin composition for sealing optical semiconductor and optical semiconductor device |
| JP2008013759A (en) * | 2006-06-07 | 2008-01-24 | Sumitomo Chemical Co Ltd | Epoxy resin composition and epoxy resin cured product |
| WO2019131670A1 (en) * | 2017-12-28 | 2019-07-04 | 日立化成株式会社 | Sealing composition and semiconductor device |
| JPWO2019131670A1 (en) * | 2017-12-28 | 2020-12-24 | 昭和電工マテリアルズ株式会社 | Encapsulation composition and semiconductor device |
| JP7255497B2 (en) | 2017-12-28 | 2023-04-11 | 株式会社レゾナック | Encapsulating composition and semiconductor device |
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