JPH08204062A - Ball grid array type semiconductor device and manufacture of the same - Google Patents

Abstract

PURPOSE: To reduce the manufacturing steps and enhance a solder ball group holding force by partially expanding a metal lead frame width, exposing and sealing with resin a metal fine lead for connecting an electrode of semiconductor chip and inner lead, and forming directly a solder ball without polishing a metal fine lead. CONSTITUTION: Both sides of an inner lead 5 of a metal lead frame for mounting a semiconductor chip 1 are formed wider as the extended regions 5a, 5b, 5c. Next, support resins 4a, 4b, 4c are bonded on the expanded regions 5a, 5b, 5c of the inner lead 5 and the expanded regions 5a, 5b, 5c corresponding to the electrode group for signal input and output of the semiconductor chip 1 are wire-bonded with a metal fine lead 3. A solder ball 6c is fused to the metal fine lead 3 on the support resins 4a, 4b, 4c. Thereby, manufacturing and fitting processes of resin substrate are not required and the solder ball group holding force can be enhanced.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ball grid array type semiconductor device and a method for manufacturing the same, and more particularly to a ball grid array type semiconductor device for forming solder balls on fine metal wires exposed on a package surface and a method for manufacturing the same.

[0002]

2. Description of the Related Art In recent years, semiconductor devices have been used in a wide range of fields including industrial equipment and consumer equipment as the degree of integration has been improved. For this reason, a semiconductor device having a package having a shape that is easy to use for each device such as miniaturization, thinning, low cost, and multi-pin has been commercialized.

One of the package forms of these semiconductor devices is a ball grid array type semiconductor device. Referring to FIG. 5, which shows a cross-sectional view of a general example of this type of semiconductor device, a wiring pattern 13 etched with a copper foil or the like is provided on both surfaces of a substrate 11 made of an epoxy resin or the like. One end of the pattern 13 is connected to the electrode of the semiconductor chip 1 fixed and mounted with, for example, a silver paste on the central portion of the substrate 11 by a thin metal wire 3, and the other end is appropriately further around the outside of the semiconductor chip 1. It is arranged and connected to a through hole 12 drilled at the tip. The through hole 12 is connected to a solder ball connection solder pad (not shown) on the back surface of the substrate 11. These members are entirely resin-sealed, and solder balls 6 are melt-bonded to the positions of the solder pads by reflow or the like.

The outline of the conventional method of manufacturing a ball grid array type semiconductor device is as follows. First, a semiconductor chip 1 is mounted on a resin substrate 11 made of glass epoxy resin or the like by an adhesive, and the electrodes of the semiconductor chip 1 are connected to the resin. The wiring pattern electrode of the substrate 11 is connected by bonding with the wire 3.

Next, solder pads are provided in a predetermined arrangement on the back surface of the substrate 11, and the solder balls 6 are melt-bonded to the solder pads through openings in predetermined positions of the solder pads. Since the solder pad and the through hole 12 are connected to the electrode of the semiconductor chip 1 through the through hole 12 on the surface of the substrate 11 by the conductive metal film on the inner surface of the through hole and further to the electrode of the semiconductor chip 1 by the wiring pattern 13, the solder ball 6 and the semiconductor chip 1 The electrical connection with the electrodes is completed.

After the electrical connection is completed, all the members on the surface of the substrate 11 are sealed with resin, thereby completing the manufacturing process.

On the other hand, another example of a ball grid array type semiconductor device in which solder balls are disposed on the surface of a resin package on the surface of a semiconductor chip is described in Japanese Patent Application Laid-Open No. 3-94438. Referring to FIG. 6A showing a cross-sectional view of the semiconductor device before forming solder balls and FIG. 6B showing a cross-sectional view after forming solder balls of the semiconductor device disclosed in the publication, the semiconductor device is a semiconductor chip 1 It has a dummy support 15 formed integrally with the die pad 2 for mounting the semiconductor chip 1, and after bonding the semiconductor chip 1 onto the die pad 2, the electrode 14 of the semiconductor chip 1 and the dummy support 15 are connected by the metal wiring 3. Bonding connection is performed, and the entire members are resin-sealed.

After encapsulation with resin, lines BB ′ and CC ′
Is cut off from the outside to leave a portion on which the semiconductor chip 1 is mounted. The surface of the remaining portion and the thin metal wire 3 are polished to expose the surface of the thin metal wire 3 to a predetermined thickness. The solder balls 6 are formed on the exposed and polished portions of the thin metal wires 3.

That is, the conventional wire bonding method can be used by using the dummy support 15.

[0010]

The conventional ball grid array type semiconductor device shown in FIG. 5 has a structure in which the semiconductor chip 1 is mounted on the resin substrate 11. In the space other than the portion where the is mounted, the space for the through hole 12 and the wiring pattern 13 for connecting the through hole 12 and each forming step are required.

[0011] Therefore, there is a disadvantage that manufacturing costs such as material costs, processing costs, and assembly costs are high.

On the other hand, in the case of the conventional example shown in FIGS. 6A and 6B, a step of polishing the surfaces of the resin 7 and the fine metal wires 3 for forming the solder balls 6 is required. The thickness of the thin metal wire 3 is reduced, and the strength for holding the solder ball 6 must be lower than the predetermined strength of the thin metal wire, and bonding is performed in correspondence with the electrodes arranged in a row around the chip. There is a drawback in that the solder balls are arranged in a line on the thin metal wires to be formed, and the expandability for coping with the increase in the number of pins is insufficient.

SUMMARY OF THE INVENTION An object of the present invention has been made in view of the above-described drawbacks, and is intended to connect a semiconductor chip electrode to an inner lead by partially using the width of a metal lead frame on which the semiconductor chip is mounted. By forming a solder ball directly without exposing the fine metal wire to be exposed and polishing the exposed fine metal wire, the manufacturing cost can be reduced under the existing manufacturing process line, and An object of the present invention is to provide a ball grid array type semiconductor device capable of increasing the number of pins and having an increased holding force.

[0014]

A feature of the ball grid array type semiconductor device of the present invention is that a group of thin metal wires connected to a group of electrodes of a mounted semiconductor chip is exposed on a package surface by a predetermined drawing means. In a ball grid array type semiconductor device in which the input / output terminals made of solder balls are joined to the exposed fine metal wires and the entirety is sealed with a mold resin, the semiconductor chip is mounted on a die pad of a lead frame,
The inner lead group is disposed at a height equal to or greater than the thickness of the semiconductor chip, and the extended regions are formed at a plurality of places on both sides of each of the extended regions. And a support resin group that supports the fine metal wires, the fine metal wire groups that are wired from a plurality of the electrode groups and are in contact with and straddle the upper surface of the support resin, respectively, and It is to be formed by fusion bonding to the metal thin wire group.

[0015] Further, the lead-out means can seal the surface of the semiconductor chip with the mold resin at a height at which the thin metal wire group on the support resin group is exposed.

Further, the support resin group is provided in the vicinity of the edge near the semiconductor chip on the extension area in an elongated shape within a range in which at least the fine metal wires straddling the upper surface can maintain an interval where they do not contact each other. Is done.

Furthermore, the position of the inner lead group is set lower than the height of the semiconductor chip, and the upper surface of the support resin is set higher than the height of the semiconductor chip.

Further, at least one of the plurality of extension regions formed for each of the inner leads is extended in the longitudinal direction, and one row or one row is provided for each adjacent extension region of the inner lead and each side around the die pad. It is formed by being connected annularly.

The feature of the method of manufacturing the ball grid array type semiconductor device of the present invention is that the thin metal wires connected to the electrode group of the mounted semiconductor chip are exposed to the package surface by predetermined drawing means, and these exposed thin metal wires are exposed. In the method of manufacturing a ball grid array type semiconductor device in which the input / output terminals are joined by solder balls to each other and are sealed with a molding resin, the inner lead group has a thickness equal to or greater than the thickness of the semiconductor chip. A lead frame in which the semiconductor chip is mounted on a die pad, and an extension region is formed at a height and formed on both sides with a wide area at a plurality of locations, and the metal thin wire is maintained. A step of forming support resin groups on the expansion region so that their heights are aligned, and A step of bonding a plurality of the electrodes on the same flat surface of the extended region in a state where the thin metal wires are in contact with and straddle each upper surface of the support resin group, and a mold resin sealing after the bonding step. Then, after the resin sealing, a step of cutting the thin metal wire by the opening from the surface of the sealing resin before the bonding point, and a step of backfilling the opening after the cutting with a predetermined insulating resin. , The step of forming the solder ball group by fusion bonding on the thin metal wire exposed on the surface of the sealing resin.

[0020]

Embodiments of the present invention will now be described with reference to the drawings.

FIG. 1A is a plan view showing a main part of a ball grid array type semiconductor device according to a first embodiment of the present invention. For ease of explanation, a solid line portion is resin-sealed. In this case, a dotted line indicates a state in which a solder ball is formed in a state of being sealed with a resin. Figure 1 (b)
3A is a cross-sectional view taken along the line AA ′ in FIG.

Referring to FIGS. 1A and 1B, this ball grid array type semiconductor device has a die pad 2 and an inner lead 5 on which a semiconductor chip 1 is mounted.
The inner lead 5 is provided at a height equal to or higher than the thickness of the semiconductor chip 1, and has an equal length, equal intervals, and four sides (DIP) parallel to each other. In the case of a mold, the expansion regions 5a, 5b, 5c are formed on both sides opposite each other and are widely formed at a plurality of places on each side, for example, three places, and the respective heights are equally formed on these extension regions. In addition, the support resins 4a, 4b, 4c supporting the thin metal wires and one end thereof are wired from a plurality of electrode groups on the semiconductor chip 1, and the expansion regions are in contact with and straddle the upper surfaces of the support resins 4a, 4b, 4c, respectively. The fine metal wire 3 having the other end bonded to the upper side and the solder ball 6a formed by fusion bonding to the fine metal wire 3 on the support resins 4a, 4b, 4c,
6b and 6c.

The above-described thin metal wires 3 are formed in the same extended region 5a, 5a in order to prevent contact due to slack between the thin wires.
The thin wire lengths of b and 5c are arranged symmetrically with the inner lead 5 interposed therebetween. That is, the thin line closest to the inner lead 5 is the shortest, and the thin line farthest from the inner lead 5 is the longest. By wiring in this manner, the short thin wires have little slack in themselves, so that the risk of contact is extremely small even though they are in the closest state.

On the other hand, a predetermined space is provided between the adjacent inner leads 5 and the adjacent expansion regions 5a, 5b, 5c in order to facilitate the flow of the resin during resin encapsulation. That is, the thin line closest to the space between the inner leads 5 is the longest,
The furthest thin line is the shortest. By arranging in this way, the adjacent long thin wires are in a state where their own slack is large, but the interval therebetween is further increased by the space, so that the risk of contact is extremely small.

As described above, the wiring of the fine metal wires 3 is symmetrical on both sides of the inner lead 5 and on both sides of the space between the inner leads 5 in order to prevent contact between the fine metal wires 3. However, if there is some margin for the risk of contact, one of the fine wires located on both sides of the inner lead 5 and closest to each other is the longest, and the inner wire on the same one side is the longest. Asymmetrical wiring in which the fine wire farthest from the lead becomes the shortest may be repeatedly wired for each inner lead 5.

Referring to FIG. 1A again, the inner lead 5 is disposed at a position higher than the height of the semiconductor chip 1 with respect to the die pad 2. By arranging in this manner, the fine metal wires 3 can be reliably brought into contact with the top portions of the support resins 4a, 4b, 4c, and the formation of the solder ball group can be reliably performed. Furthermore, a thin metal wire 3
The slack is prevented, and the edge touch in which the thin metal wire 3 contacts the corner of the semiconductor chip 1 is also prevented.

The extended area 5 of each of the inner lead groups 5
One support resin 4a on each of a, 5b, 5c
Heat is applied in a state where the bottom surfaces of 4b and 4c are bonded with an adhesive, and the electrode group of the semiconductor chip 1 is bonded and connected to the extended regions 5a, 5b and 5c with the wires 3 over the support resins 4a, 4b and 4c. A curable resin, for example, an epoxy pellet (E pellet), which is a well-known technique, is formed by using a low-pressure transfer molding method on a support resin 4a, 4b.
It is resin-sealed so as to be flush with the surfaces of b and 4c. That is, since they are on the same plane, the thin metal wires 3 are exposed on the surface of the resin-sealed package.

Holes 8a, 8b, 8c of a predetermined size are respectively opened from the upper surface of the resin-sealed package toward the bottom surfaces of the extended regions 5a, 5b, 5c.

The positions where these holes 8a, 8b, 8c are to be opened are, for example, vertically on the thin metal wire 3 bonded on one extended area 5a and along the rear edge of the support resin 4a. Support resin 4a
The thin metal wire 3 is cut between the extension area 5a and the extension area 5a. This disconnection cuts off the electrical connection with the other thin metal wires 3 bonded on the same extended region 5a, and becomes an independent wiring. Openings for cutting the wiring are sequentially formed on other thin metal wires.

These holes 8a, 8b, 8c are backfilled with, for example, a polymer resin or the like, but the holes may be left as they are depending on the use environment of the package.

A solder ball group is formed on each of the thin metal wires 3 adjacent to the hole groups 8a, 8b, 8c and disposed on the tops of the support resins 4a, 4b, 4c and exposed on the surface. The thin wire 3 and the solder ball group are melt-bonded to each other.

According to this embodiment described above, for example, the present invention can be applied to a multi-pin compatible semiconductor device in which the electrodes of the semiconductor chip 1 are arranged in a plurality of rows in a staggered manner, so that the flexibility is wide.

In the method of manufacturing the ball grid array type semiconductor device having the above-described structure, a cross-sectional view of the semiconductor device after wire bonding to the semiconductor chip mounted on the lead frame and before resin sealing is included in the manufacturing process. 2 (a) showing the same, FIG. 2 (b) showing a cross-sectional view of the semiconductor device in a resin-sealed state, and FIG. 2 showing a cross-sectional view showing a state in which holes for cutting fine metal wires are opened on the package surface.
(C), FIG. 2 (d) is a cross-sectional view showing a state in which the opened holes are backfilled with a polymer resin, and FIG. 2 is a cross-sectional view showing a state in which a solder ball group is formed on each of the inner leads 3 on the package surface. Referring to (e) together, first, a lead frame is prepared.

As described above, an extended area for bonding the support resins 4a, 4b, 4c to the lead frame, that is, the inner lead 5 formed with, for example, three pieces 5a, 5b, 5c in this embodiment, is the same. Are arranged at equal lengths, at equal intervals, and in parallel with each other, and are arranged on four sides (only one side is shown in FIG. 1) while maintaining a predetermined space.

Next, each extended area 5a,
A support resin 4a, 4b, 4c made of an insulating material according to a known technique is adhered onto 5b, 5c. After this adhesive fixation, the electrode groups for signal input / output of the semiconductor chip 1 and the corresponding extended regions 5a, 5b, 5c are connected by wire bonding (FIG. 2A).

When the wire bonding connection is completed, the semiconductor chip 1 is sealed with the thermosetting resin 7 described above in the sealing step, one package is mounted on one lead frame, and the resin 7 is the support resin 4a. , 4
The discharge amount of the resin is controlled so as to be flush with the surfaces of b and 4c, and a sealed state is obtained (FIG. 2B).

Holes 8a, 8b, 8c are opened in the sealed package, for example, by a laser beam or a small-diameter drill 10 perpendicularly to the direction of the extended region surface from the surface of the package. The opening position is the support resin 4a,
Any position corresponding to the position on the thin metal wire 3 along the trailing edges of 4b and 4c may be used, and the thin metal wire 3 connected to the extended regions 5a, 5b and 5c is cut by this hole opening.

At the positions of the hole groups 8a, 8b, 8c, the spacing in the arrangement direction of the inner leads 5 is determined by the pitch of the expansion regions 5a, 5b, 5c, and the width of each expansion region is melted in the thin metal wire 3. The support resin 4a also supports the metal thin wires 3 adhered to the expansion regions 5b and 5c, although the width may be determined in consideration of the space that at least satisfies the closest space of the solder balls on the expansion regions 5a to be joined. In order to do this, it is desirable to preset the same width as the other areas 5b and 5c.

In order to join the solder ball groups, the wiring interval on the support resin needs to be 100 μm or more at present.

It is sufficient that these holes 8a, 8b, 8c have the same size (diameter) as a lead mounting hole for a resistor or the like in an ordinary printed circuit board (FIG. 2).
(C)).

After cutting the thin metal wires through the openings, the holes 8a, 8b and 8c are backfilled by filling an insulating resin such as a polymer resin. In this case, the same resin as the package encapsulation resin is also conceivable, but since the opening step is performed in a cured state of the resin after the encapsulation, a polymer resin is applied due to the adhesion to the backfilling resin (FIG. 2).
(D)).

Then, the solder balls 6a, 6b, 6c are connected to the support resin 4 by a known solder ball method.
After placing on the exposed metal thin wire 3 on a, 4b, 4c,
Solder balls 6a, 6b, heated in an infrared reflow furnace
6c and the thin metal wire 3 are respectively fusion-bonded.

By this bonding, the electrical connection of the input / output signal line of the semiconductor chip 1 is made through the electrode group for the input / output signal, the thin metal wire 3 and the solder balls 6a, 6b, 6c, respectively. (FIG. 2 (e)).

The lead frame having the package to which the solder balls 6a, 6b and 6c are joined is cut and separated at the portions where the inner leads 5 project from the side surface of the package to the individual packages.

The package having the solder ball group formed as described above is composed of these solder balls 6a, 6
The non-defective products are selected by using b and 6c to carry out an electrical characteristic test of the semiconductor chip 1 mounted and mounted on the LSI test apparatus.

In this embodiment, the inner leads 5 are described using lead frames arranged in parallel with each other, but they need not necessarily be parallel, and other arrangements can be applied. However, in order to linearly and regularly arrange the solder ball group, a lead frame with parallel leads is easier.

Next, FIG. 3 showing a main part of the second embodiment.
This embodiment is a modified example of the first embodiment. The difference from the first embodiment is that the extended regions 5a of the inner leads are respectively extended to both sides and connected to one annular member. That is. The other components are the same as those of the first embodiment, so the same components are denoted by the same reference numerals and description of the configuration will be omitted.

According to the present embodiment, since the extended area 5a is connected to all four sides, the horizontal position between the inner leads is more stable, and the tops of the support resin groups are aligned on the same plane during resin sealing. Becomes easier.

Further, in this embodiment, the extension area 5a is connected to one, but it is obvious that the four sides may be independently provided.

Further, the extension regions 5a, 5b, 5c may be connected to each other to form one flat plate.

Next, FIG. 4 showing the main part of the third embodiment.
This embodiment is also a modification of the first embodiment, and is different from the first embodiment in that the position of the inner lead 5 is disposed at a position lower than the height of the semiconductor chip 1, Support resin 4 provided on extension regions 5a, 5b, 5c
That is, the heights of a, 4b, and 4c are higher than the height of the semiconductor chip 1. The other components are the same as those of the first embodiment, so the same components are denoted by the same reference numerals and description of the configuration will be omitted.

According to the present embodiment, the inner lead 5 can be set arbitrarily within the range from the same plane as the die pad 2 to the height of the semiconductor chip 1. It is possible to reliably contact the top portions of the support resins 4a, 4b, 4c, and it is possible to reliably form the solder balls 6. Further, the slack of the thin metal wire 3 is prevented, and the thin metal wire 3 is
Also prevents edge touches that touch the corners.

It is clear that a combination of this embodiment and the second embodiment may be used.

[0054]

As described above, according to the ball grid array type semiconductor device and the method of manufacturing the same of the present invention, the inner lead groups of the lead frame made of a metal for mounting the semiconductor chip are equal to or more than the thickness of the semiconductor chip. Expansion regions which are arranged at the same height and are formed widely at a plurality of positions on both sides, a support resin group which has the same height on each of these expansion regions and supports the thin metal wires, and one end of which is a semiconductor. A group of thin wires that are wired from multiple electrode groups on the chip and that are in contact with and straddle the upper surface of the support resin group and the other end of which is bonded to the expansion area, respectively, and an opening from the resin-sealed package surface after bonding. A group of holes that cut the thin metal wires from the bonding points on the extended area and the thin metal wires exposed on the support resin surface. Since it has a structure composed of a solder ball group that is bonded and formed on the metal chip, it is not necessary to connect the electrode of the semiconductor chip and the solder ball group through a resin substrate as in the conventional case, and the metal fine wire group exposed on the surface of the support resin is not necessary. By directly joining the solder ball group to the existing manufacturing process line, there is no need to manufacture and mount the resin substrate, and the mounting process is reduced, reducing the manufacturing cost and increasing the holding power of the solder ball group. A grid array type semiconductor device can be provided.

[Brief description of drawings]

FIG. 1A is a plan view showing a main part of a first embodiment of a ball grid array type semiconductor device according to the present invention. (B) It is sectional drawing in the cutting line AA 'of a figure (a).

FIG. 2A is a cross-sectional view of a method of manufacturing a ball grid array type semiconductor device according to the present invention, in which a semiconductor chip is mounted on a lead frame before resin sealing. (B) It is sectional drawing of the state which carried out resin sealing. (C) It is sectional drawing in the state where the hole for cutting metal thin wires was opened. (D) is a sectional view showing a state in which holes are backfilled with a polymer resin after cutting the thin metal wire. (E) is a sectional view showing a state in which solder ball groups are joined to the thin metal wires 5 on the package surface, respectively.

FIG. 3 is a plan view showing a main part of a second embodiment of the present invention.

FIG. 4 is a sectional view showing a main part of a third embodiment of the present invention.

FIG. 5 is a cross-sectional view of an example of a conventional ball grid array type semiconductor device.

FIG. 6A is a cross-sectional view of another example of a conventional ball grid array type semiconductor device before a solder ball is formed. (B) It is a cross-sectional view after forming the solder balls.

[Explanation of symbols]

 Reference Signs List 1 semiconductor chip 2 die pad 3 thin metal wire 4a, 4b, 4c support resin 5 inner lead 6, 6a, 6b, 6c solder ball 7 resin 8a, 8b, 8c hole 9a, 9b, 9c polymer resin 10 drill 11 substrate 12 through hole 13 Wiring pattern 14 Electrode 15 Dummy support

Claims (6)

[Claims] 1. A group of thin metal wires connected to an electrode group of a mounted semiconductor chip are respectively exposed on the package surface by a predetermined drawing means, and an input / output terminal made of a solder ball is formed on the exposed thin metal wire. In addition, in a ball grid array type semiconductor device in which these are entirely sealed with a mold resin, the semiconductor chip is mounted on a die pad of a lead frame, and the inner lead group is arranged at a height equal to or higher than the thickness of the semiconductor chip. Extended areas are provided and formed on both sides of each of the extended areas at a plurality of places, a support resin group formed to have the same height on each of the extended areas and supporting the thin metal wire, And fixed to the support resin upper surface while being in contact with and straddling the upper surface of the support resin. A ball grid array type semiconductor device having a structure including a line group and a solder ball group formed by fusion bonding to the metal fine line group on the support resin group. 2. The ball grid array type semiconductor according to claim 1, wherein said lead-out means resin-encapsulates the surface of said semiconductor chip at a height at which said mold resin exposes said fine metal wire group on said support resin group. apparatus. 3. The support resin group is elongated in the vicinity of an edge near the semiconductor chip on the extension region within a range where at least the metal fine wires straddling the upper surface can be maintained so as not to contact each other. The ball grid array type semiconductor device according to claim 1, wherein: 4. The ball grid according to claim 1, wherein the positions of the inner lead groups are set lower than the height of the semiconductor chip, and the upper surface of the support resin is set higher than the height of the semiconductor chip. Array type semiconductor device. 5. A method according to claim 1, wherein at least one of the plurality of extension regions formed for each inner lead is extended in the longitudinal direction, and one row is provided for each adjacent extension region of the inner lead and each side around the die pad. The ball grid array type semiconductor device according to claim 1, wherein the semiconductor device is formed in a ring shape. 6. A thin metal wire connected to an electrode group of a mounted semiconductor chip is exposed on a package surface by a predetermined drawing means, and an input / output terminal is formed by joining a solder ball to the exposed thin metal wire. ,
In a method of manufacturing a ball grid array type semiconductor device in which the entirety is sealed with a mold resin, the inner lead group is disposed at a height equal to or greater than the thickness of the semiconductor chip, and each side is wide at a plurality of locations. A lead frame in which the formed extended region is formed in the inner lead group and the semiconductor chip is mounted on a die pad, wherein the support resin group for maintaining the thin metal wires aligns the respective heights on the extended region. Forming a plurality of electrodes on the same extended region in a state where the fine metal wires are in contact with and straddle the respective upper surfaces of the support resin group; and After the step, the molded resin is sealed, and after the resin is sealed, the fine metal wire is formed by the opening from the sealing resin surface. A step of cutting before the bonding point, a step of back-filling the opening after the cutting with a predetermined insulating resin, and a step of fusion-bonding the solder ball group to the thin metal wire exposed on the surface of the sealing resin. Forming a ball grid array type semiconductor device.