JPH08178779A - Semiconductor pressure sensor and manufacture thereof - Google Patents

Abstract

PURPOSE: To perform the bonding of a chip and the sealing of a stem stage at the same time and to decrease the manufacturing cost by decreasing the bonding manhours. CONSTITUTION: The bonding step for bonding a chip 1, to which a pressure sensitive semiconductor element 2 and a glass stage 3 are bonded, to a stem stage 10 or a pressure introducing pipe 30 and a sealing step for penetrating signal lead-out pins 20 of the pressure sensitive semiconductor element 2 into pinholes 11 of the stem stage 10 and sealing the stem stage 10 are performed at the same time. The bonding of the chip 1 and the sealing of the stem stage 10 become easy, and the simplification of the manufacturing process is achieved.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor pressure sensor for converting pressure into an electric signal and a method for manufacturing the semiconductor pressure sensor.

[0002]

2. Description of the Related Art A conventional semiconductor pressure sensor is a bonded body (hereinafter referred to as a bonded body) in which a pressure sensitive semiconductor element (silicon chip) 2 for measuring the pressure of a fluid introduced from a pressure introducing pipe 30 and a glass pedestal 3 are joined. (Referred to as “chip 1”) is housed inside the housing 90, and the signal lead-out pin 2 of the chip 1 is accommodated.
It is known that 0 is hermetically supported in the pin hole 11 of the stem pedestal 10. In manufacturing this semiconductor pressure sensor, as shown in FIGS. 34 and 35, for example, when the chip 1 is bonded to the stem pedestal 10, the glass pedestal 3 is bonded to the stem pedestal 10 and the sealing material is used. A method is known in which the pressure-sensitive semiconductor element 2 is bonded to the glass pedestal 3 with a bonding material 50 after simultaneously sealing the signal lead-out pin 20 with 40 '. As another manufacturing method, as shown in FIG.
6 to 38, a step of joining the chip 1 to either the stem pedestal 10 or the pressure introducing pipe 30 with the joining material 50, and sealing the pin hole 11 of the stem pedestal 10 with the sealing material 40 '. A method is known in which the stopping step is performed separately.

[0003]

However, as shown in FIG.
In the method of FIGS. 4 and 35, it is necessary to bond the pressure-sensitive semiconductor elements 2 after dicing to the glass pedestal 1 one by one, and there is a problem that the number of bonding steps increases and the bonding becomes extremely difficult. In addition, in the method of FIGS. 36 to 38, the bonding of the silicon wafer and the glass wafer,
And the stem pedestal 10, the chip 1 and the stem pedestal 10, and the housing 60.
Stepwise joining is required, and when soldering the chip 1, a method of gold-plating the entire stem joined body is adopted. Therefore, there is a problem that the number of joining steps increases and the manufacturing cost increases. .

The present invention has been made in view of the above conventional problems, and its purpose is to join a tip and a stem pedestal or a pressure introducing pipe, and to seal the stem pedestal and a signal lead-out pin. Can be done simultaneously,
(EN) Provided are a semiconductor pressure sensor and a manufacturing method thereof, which can reduce the manufacturing cost by reducing the number of joining steps.

[0005]

In order to solve the above-mentioned problems, the invention of claim 1 is provided with a pressure-sensitive semiconductor element 2 for measuring the pressure of a fluid introduced from the outside. In a method of manufacturing a semiconductor pressure sensor in which a signal lead-out pin 20 is supported by a stem pedestal 10, a stem 1 of a pressure-sensitive semiconductor element 2 and a glass pedestal 3 joined together or a pressure introduction pipe for introducing pressure. Thirty
And a sealing step of sealing the signal lead-out pin 20 of the pressure-sensitive semiconductor element 2 on the stem pedestal 10 with a sealing material at the same time. There is.

According to a fourteenth aspect of the invention, there is provided a pressure sensitive semiconductor element 2 for measuring the pressure of a fluid introduced from the outside,
In the semiconductor pressure sensor in which the signal extraction pin 20 of the pressure-sensitive semiconductor element 2 is supported by the stem pedestal 10, the stem 1 or the pressure is introduced to the chip 1 in which the pressure-sensitive semiconductor element 2 and the glass pedestal 3 are joined. It is characterized in that a sealing material is supplied across a joint portion that is joined to the pressure introducing pipe 30 and a seal portion that hermetically seals the signal lead-out pin 20 on the stem pedestal 10. ing.

[0007]

In the present invention, the chip 1 is hermetically bonded to the stem pedestal 10 or the pressure introducing pipe 30 with a bonding material, and the signal pedestal pin 20 of the pressure-sensitive semiconductor element 2 is bonded to the stem pedestal 10 with a sealing material. Since the sealing step for hermetically sealing is performed at the same time, the bonding of the chip 1 and the sealing of the stem pedestal 10 can be performed at the same time in one step, which simplifies the manufacturing method. Becomes

[0008]

EXAMPLES Example 1 FIGS. 1 to 4 show an example of the present invention.
The semiconductor pressure sensor A used in this embodiment is shown in FIG.
As shown in (b), a bonded body (hereinafter referred to as a chip 1) in which the pressure-sensitive semiconductor element 2 for measuring the pressure of the fluid introduced from the pressure introduction pipe 30 and the glass pedestal 3 are joined together. The chip 1 is housed in a housing 90 surrounded by the stem pedestal 10 and the housing 30 and has a pin hole 11 for pulling out the signal lead-out pin 20 of the pressure-sensitive semiconductor element 2 to the outside of the housing 60. It is configured to support. Then, the glass pedestal 3 is attached to the chip 1 and the pressure introducing pipe 30 (or the stem pedestal 2).
0), and a pin hole 11 in the stem pedestal 10 and an insertion hole 1 for the pressure introducing pipe 30.
2 are formed, the signal lead-out pin 20 of the chip 1 penetrates the pin hole 11, and the insertion hole 12 of the stem pedestal 10 is formed.
A pressure-introducing pipe 30 penetrates through, and the sealing material is separately supplied to the joint portion of the chip 1 and the sealing portion of the stem pedestal 10.

Here, the sealing material 40 and the bonding material 50 are used.
For example, low melting point glass (PbO.B ₂O₃Used by
Chips by heating this low melting glass
1 and the pressure introducing pipe 30 and the stem pedestal 10
So that the signal lead-out pin 20 is hermetically sealed.
It has become. Further, as the material of the stem pedestal 10,
For example, Kovar with a linear expansion coefficient close to that of the glass pedestal 3 or 42
Metallic material such as alloy (trade name) is used, and pressure sensitive
The material of the glass pedestal 3 supporting the conductor element 2 is
Materials with a linear expansion coefficient close to that of recon, such as Pyrex gas
Las (trade name) is used.

Next, in manufacturing the semiconductor pressure sensor A, the processing of the stem pedestal 10 and the signal lead-out pin 20 are performed.
Processing, hole forming of the glass wafer 3A shown in FIG. 2 and circuit formation of the silicon wafer 2A are performed (step n1 in FIG. 3), and then the glass wafer 3A and the silicon wafer 2A are joined and the joined body is diced. And (steps n2 and n3 in FIG. 3) are sequentially performed, and thereafter, each member is set to join the tip 1 and the pressure introducing pipe 30, the stem pedestal 10, the signal lead-out pin 20 and the pressure introducing pin. Low melting point glass is supplied to the sealing portion with the pipe 30 to join the chip 1 and the pressure introducing pipe 30 in the atmosphere or nitrogen, the stem pedestal 10 and the signal extraction pin 2
0 and the stem pedestal 10 and the pressure introducing pipe 30 are simultaneously sealed (step n4 in FIG. 3). At this time, the low melting point glass may be in the form of paste, powder or sintered material, but the low melting point glass is sintered to form the pin hole 41 of the signal extraction pin 20 and the insertion hole of the pressure introducing pipe 30. It is preferable to use the sintered sealing material 40 in which 42 is formed, and the holes 41 and 42 are preferably set to be slightly larger than the signal extraction pin 20 and the pressure introducing pipe 30. Further, in order to facilitate the subsequent wire bonding 61, the signal lead-out pin 20 is preferably plated with Ni or the like in advance to 1 to 10 μm, and then Au is plated to the outermost layer in 0.1 to 5 μm. After the chip 1 is bonded and the stem pedestal 10 is sealed in this manner, the wire bonding 61 of the chip 1 and the housing 6
By sequentially installing 0 (step n in FIG. 3)
5, n6), the chip 1 is placed inside the housing 90 shown in FIG.
It is possible to obtain the semiconductor pressure sensor A in which is stored.

As described above, the joining step of joining the chip 1 to the pressure introducing pipe 30 (or the stem pedestal 10), the sealing step of the stem pedestal 10 and the signal lead-out pin 20, the stem pedestal 10 and the pressure introducing pipe 30. By simultaneously performing and, the manufacturing process can be simplified. Further, as in the present embodiment, the bonding material 50 in the bonding step and the sealing material 40 in the sealing step are made of the same material (for example, low melting point glass) made of the bonding material 50 and the sealing material 40. The materials can be easily supplied, and the pressure introducing pipes 30 can be joined at the same time, which has the advantage of further simplifying the manufacturing process. (Embodiment 2) In this embodiment, as shown in FIG. 5, the chip 1 is inserted into the insertion hole 12 of the stem pedestal 10, and the sealing material 40 containing the bonding material is applied to the bonding portion of the chip 1 and the stem pedestal 10.
The sealing material 40 is integrally supplied to the sealing part of
Is supplied across the joint portion of the chip 1 and the sealing portion of the stem pedestal 10 to improve the joint strength of the chip 1. Specific examples thereof are shown in FIGS.
Shown in First, as shown in FIG. 6, a low melting point glass is sintered to form a sintered sealing material 40 having a pin hole 41 for the signal extraction pin 20, a chip 1 and an insertion hole 42 for the pressure introducing pipe 30. . Here, the holes 41 and 42 are set to be slightly larger than the chip 1, the signal lead-out pin 20, and the pressure introducing pipe 30. And FIG. 7 (a)-(c)
As shown in FIG. 1, the chip 1, the signal lead-out pin 20, and the pressure introducing pipe 30 are inserted into the holes 41 and 42 of the sintered sealing material 40, and the sintered sealing material 40 is placed on the lower surface side of the stem pedestal 10. And heat at a bonding temperature of the low-melting glass (which varies depending on the kind of the low-melting glass, about 400 ° C. to 600 ° C.) in the atmosphere or nitrogen to lower the low-melting glass (sintering sealing material 40). The melting point glass is melted and each member (chip 1, signal extraction pin 20, pressure introducing pipe 3
0) is sealed and bonded, the bonding of the chip 1 and the sealing of the stem pedestal 10 can be performed at the same time, as shown in FIGS. Can be increased. On the other hand, as shown in FIGS. 9A to 9C, the sintered sealing material 40 is set on the upper surface side of the stem pedestal 10 and heat-bonded under the same conditions as described above, so that the result shown in FIG. d) (e) As shown in FIG. 10, the chip 1 can be joined and the stem pedestal 10 can be sealed at the same time. In this case, since the sintered sealing material 40 is covered with the stem pedestal 10 from the lower surface side,
The portion where the sintered sealing material 40 is exposed to the outside of the stem pedestal 10 is reduced, and in addition to the improvement in the bonding strength of the chip 1, the sintered sealing material 40 is resistant to corrosiveness and strength from external pressure. Can be structured. (Embodiment 3) In this embodiment, the linear expansion coefficient is the glass pedestal 3
And a sealing material having a linear expansion coefficient close to that of the signal extraction pin 20 or the stem pedestal 10 are separately supplied. The joining method of the chip 1 and the stem pedestal 10
The sealing method is the same as that of the embodiment of FIG. 1 or the embodiment of FIG. In this embodiment, a material having a linear expansion coefficient similar to the linear expansion coefficient with the glass pedestal 3 is preferentially selected as the bonding material 50, and the linear expansion coefficient with the stem pedestal 10 (metal material) is selected as the sealing material 40. Those having a linear expansion coefficient close to are preferentially selected. Specifically, a bonding material having a linear expansion coefficient between glass and metal (for example, LS-1301 manufactured by Nippon Electric Glass) is used as the bonding material 50, and the sealing material 4 is used.
A sealing material (for example, LS-3051 manufactured by Nippon Electric Glass Co., Ltd.) having a coefficient of linear expansion with that of metal is used as 0. Then, by separately supplying the bonding material 50 and the sealing material 40 to the sealing portion of the chip 1 and the sealing portion of the stem pedestal 10, the generation of thermal stress due to heating at the time of bonding is small, and A joint structure that is strong against fatigue can be obtained. In addition, the bonding material 50 and the sealing material 40 are selected with priority on the linear expansion coefficient, so that the bonding portion of the chip 1 and the sealing portion of the stem pedestal 10 can be simultaneously sealed with characteristic materials. And joining can be performed.

As another example, the materials of the bonding material 50 and the sealing material 40 may be selected according to the medium measured by the semiconductor pressure sensor A. An example using a low melting point glass will be described. As the bonding material 50, one in which the corrosion resistance of the measurement medium is prioritized (for example, crystalline low melting point glass) is used, and as the sealing material 40, a linear expansion coefficient with a metal. By using a material (for example, amorphous low-melting glass) that gives priority to (1), the application range of the semiconductor pressure sensor A (measuring various media) can be expanded. (Embodiment 4) In this embodiment, as shown in FIG. 11B, prior to performing the bonding step and the sealing step at the same time,
The surface of the signal lead-out pin 20 is plated with gold 80. In the present embodiment, the entire surface of the signal extraction pin 20 is plated with Ni, and the entire surface of this Ni is plated with gold 80, whereby the gold plating 80 can reduce the electrical resistance of the signal extraction pin 20. By applying the gold plating 80 only to the pull-out pin 20, the cost of joining can be reduced. In addition, the chip 1 to be performed after the signal lead-out pin 20 is plated with gold 80
And the sealing of the stem pedestal 10 are the same as in the embodiment of FIG. 1 or the embodiment of FIG. (Embodiment 5) In this embodiment, as shown in FIGS. 12 to 16, a sintered sealing material 40 is used, and this sintered sealing material 40 is used.
Is supplied to the stem pedestal 10. By the way, if the sintered sealing material 40 is in the form of powder or paste, the chip 1
It is difficult to position the signal lead-out pin 20 and the pressure introducing pipe 30, and the signal lead-out pin 20 may directly contact the stem pedestal 10 to cause a short circuit between the signal lead-out pins 20. In the present embodiment, the chip 1, the signal extraction pin 20,
The positioning of the pressure introducing pipe 30 can be facilitated. That is, as shown in FIG. 13, when the joining portion of the chip 1 is separated from the sealing portion of the stem pedestal 10, the pin hole 41 through which the signal extraction pin 20 penetrates the sintered sealing material 40.
And a circular insertion hole 42 that matches the shape of the pressure introducing pipe 30. On the other hand, when the chip 1 is inserted inside the sintered sealing material 40 as shown in FIGS. 15 and 16,
A pin hole 41 through which the signal extraction pin 20 penetrates the sintered sealing material 40, and a square insertion hole 42 matching the shape of the chip 1.
And, respectively. As described above, by using the sintered sealing material 40, it becomes easy to position each member at the time of setting shown in FIG. 13 (b) or at the time of setting shown in FIG. 16 (b). By heating 40, the chip 1 can be joined and the stem pedestal 10 can be sealed at the same time. (Embodiment 6) In this embodiment, as shown in FIG. 17, the glass pedestal 3 of the chip 1 is penetrated through the square hole 12 formed in the stem pedestal 10 to position the chip 1 in its rotational direction. It was done. In other words, if the positioning of the chip 1 in the rotational direction is not firmly performed, it becomes difficult to wire-bond 61 the signal extraction pin 20 and the chip 1. Therefore, in order to prevent this, the stem base 10
A hole 12 into which the chip 1 is inserted is formed, and the hole 12 is processed into a quadrangle (triangular shape or other square shape), so that the chip 1 can be easily positioned in the rotation direction. As a result, the wire bonding 61 can be easily performed. In addition, joining of the chip 1 and the stem pedestal 10
The sealing is the same as in the above embodiment. (Embodiment 7) In this embodiment, as shown in FIG. 18, the glass pedestal 3 of the chip 1 is provided with a quadrangular flange portion 1a, and the sintered sealing material 40 is attached to the glass pedestal 3 of the chip 1 and pressure. A positioning step 20 for forming a through hole 42 into which the introduction pipe 30 is inserted in a communicating state and positioning the chip 1 and the pressure introduction pipe 30 in the through hole 42.
0 is formed. In this way, the rectangular through hole 42 when viewed from above is formed in the sintered sealing material 40, and the flange portion 1a formed in the chip 1 is locked to the step 200 of the through hole 42 and the chip 1. By abutting against the pressure introducing pipe 30, the chip 1 can be easily positioned with respect to the pressure introducing pipe 30 by utilizing the sintered sealing material 40. (Embodiment 8) In this embodiment, as shown in FIGS. 19 to 21, the glass pedestal 3 of the chip 1 is attached to the sintered sealing material 40.
And the pressure introducing pipe 30 are formed in a communicating state to form a stepped through hole 42. Here, FIG. 19 shows a case where the opening area of the upper part of the stepped through hole 42 is larger than that of the lower part, FIG. 20 shows a case where the lower part of the stepped through hole 42 is smaller than that of the upper part, and FIG. The cross section of the hole 42 shows a case where the upper part is a square and the lower part is a circle. In both cases, the stepped through hole 42 of the sintered sealing material 40 is used to connect the chip 1 and the pressure introducing pipe 30. The positioning can be easily performed. The diameter of the stepped through hole 42 is preferably set to be slightly larger so that the respective members (chip 1, pressure introducing pipe 30) can be easily inserted. (Embodiment 9) In this embodiment, as shown in FIG. 22, a counterbore 30a for dropping the tip 1 and the bonding material 50 into the upper end of the pressure introducing pipe 30 is formed, and the counterbore 3 is formed.
The chip 1 and the bonding material 50 are positioned by 0a. In this embodiment, in order to prevent the position of the chip 1 from becoming too high, FIG.
As shown in (c), the stem pedestal 10 has a concave step 13 at the center thereof. And the pressure introducing pipe 3
By inserting the sintered bonding material 50 into the counterbore 30a of 0 and setting the chip 1 on the bonding material 50, the positioning of the chip 1 with respect to the pressure introducing pipe 30 can be performed more easily. it can. (Embodiment 10) In this embodiment, as shown in FIGS. 23 to 26, a storage recess 13 for housing the chip 1 and the bonding material 50 is formed in the stem pedestal 10 and sintered around the chip 1. The bonding material 40a is supplied. Here, FIG. 23 and FIG. 24 show that the sintered joint sintered material 40a housed in the housing recess 13 of the stem pedestal 10 is formed in a circular shape, and the joint sintered material 40a has a quadrangular shape when viewed from a plane. 2 shows the case where the holes are formed, and the bonding sintered material 40a and the chip 1 are housed in the housing recess 13 of the stem pedestal 10 to facilitate the positioning of the chip 1 and the bonded sintered material 40a. . On the other hand, the sealing material 40 supplied to the lower surface side of the stem pedestal 10 is sintered in a form having a step so that the central portion is recessed according to the shape of the storage recess 13 of the stem pedestal 10, By heating the sintered sealing material 40 and the chip 1 and the bonded sintered material 40a in the state of being set on the stem pedestal 10, as shown in FIG. Drawer pin 2
0 and the pressure introducing pipe 30 can be simultaneously sealed and joined.

Further, in FIG. 25, a square hole 42 having a quadrangular shape in plan view is formed in the joined sintered material 40a, and a circular hole 42a smaller than the square hole 42 is formed at the lower end of the square hole 42. 42a is connected to the pressure introducing pipe 30. As a result, the bonding and sintering material 40 is bonded to the lower surface of the chip 1.
In addition to the ease of positioning the chip 1 with respect to the stem pedestal 10, the contact area between the chip 1 and the bonding and sintering material 40a increases, and the bonding strength of the chip 1 can be increased. it can.

Further, in FIG. 26, a recess 90 'is formed in a part of the outer peripheral surface of the sintered sintered material 40a, while the stem pedestal 10 is formed.
The protrusion 91 fitted in the recess 90 ′ is provided on a part of the inner peripheral surface of the storage recess 13 to position the bonded sintered material 40 a in the rotational direction thereof. By stopping the rotation of the bonded sintered material 40a with respect to the stem pedestal 10, the rotation of the chip 1 with respect to the stem pedestal 10 is stopped, and the positioning of the chip 1 in the rotational direction becomes easier. (Embodiment 11) In this embodiment, as shown in FIGS. 27 and 28, the joining material 50 is printed on the upper end of the pressure introducing pipe 30 by screen printing, so that the joining material 5 is formed.
0 is supplied between the chip 1 and the pressure introducing pipe 30. That is, as shown in FIG. 27A, a large number of pressure introducing pipes 30 are fixed to a jig (not shown), and a paste-like bonding material 50 (for example, low melting point glass) is pressure introduced by screen printing. Pipe 3
Print on top of 0. Although it depends on the type of the low-melting glass, the binder of the bonding material 50 is evaporated by screen-baking the bonding material 50 screen-printed at about 300 ° C. to 600 ° C., and the low-melting glass is applied to the pressure introducing pipe 30. Can be fixed (FIG. 27 (b))
State). Therefore, as shown in FIG. 28, by mounting the glass pedestal 3 of the chip 1 on the upper end of the pressure introducing pipe 30 via the bonding material 50 and heating the bonding material 50,
The tip 1 and the pressure introducing pipe 30 can be easily joined. By thus forming the bonding material 50 by screen printing, the bonding material 50 can be easily supplied and positioned, and the cost of the bonding material 50 can be reduced. (Embodiment 12) In this embodiment, as shown in FIGS. 29 and 30, the bonding material 50 has a bonding material 50a having a linear expansion coefficient similar to that of the glass pedestal 3 of the chip 1,
It has a two-layer structure with the sealing material 50b having a linear expansion coefficient similar to that of the pressure introducing pipe 30 (or the stem pedestal 10). Here, the bonding material 50a
Is preferably a material having a linear expansion coefficient between glass and metal (for example, LS-1301 manufactured by Nippon Electric Glass), and the sealing material 50b is the same as the linear expansion coefficient of metal (for example, LS-made by Nippon Electric Glass). 3051) is preferable. Then, as shown in FIG. 29 (a), when the bonding part of the chip 1 is separated from the sealing part of the stem pedestal 10, the bonding material 50 a and the sealing material 50 b are laminated in upper and lower two layers. Then, the bonding material 50a is brought into contact with the glass pedestal 3 and the sealing material 50b is brought into contact with the pressure introducing pipe 30, so that the bonding material 50 is interposed between the chip 1 and the pressure introducing pipe 30. On the other hand, as shown in FIG. 30A, the tip 1 is stored in the storage recess 13 of the stem pedestal 10,
When the bonding material 50 is supplied to the periphery of the chip 1, the bonding material 50a and the sealing material 50b are laminated in two layers inside and outside, and the bonding material 50a comes into contact with the periphery of the glass pedestal 3 of the chip 1. The bonding material 50 is supplied to the periphery of the chip 1 such that the sealing material 50 b contacts the inner surface of the storage recess 13 of the stem pedestal 10. As described above, the bonding material 50 has a two-layer structure having linear expansion coefficients close to those of the glass pedestal 3 of the chip 1 and the metal (the pressure introducing pipe 30 or the stem pedestal 10), thereby improving the measurement accuracy. The temperature dependence is reduced, and the thermal stress at the time of joining can be relaxed. (Embodiment 13) In this embodiment, as shown in FIG. 31, a holding means for holding the sealing material 40 on the stem pedestal 10 is provided in the signal lead-out pin 20 of the pressure-sensitive semiconductor element 2 or the pressure introducing pipe 30. It is provided on at least one side. 31 (a) and 31 (b) show a case where an annular flange portion 31 is projected on the outer periphery of the pressure introducing pipe 30, and FIGS. 31 (c) and 31 (d) are annular flange portions on the outer periphery of the signal extraction pin 20. The case where 21 is projected is shown. Then, the pressure introducing pipe 30 and the signal lead-out pin 2
When the sealing material 40 (low melting point glass) supplied to the lower surface side of the stem pedestal 10 is heated by setting 0 as shown in FIG. 32 or FIG. 33, the outflow of the sealing material 40 is caused by an annular flange portion. It becomes possible to prevent by 21 and 31, and the positioning of each member (the pressure introducing pipe 30, the signal lead-out pin 20) by the sealing material 40 becomes easy. The flange 21 or 32 may be provided on only one of the signal lead-out pin 20 and the pressure introducing pipe 30, but from the viewpoint of preventing the sealing material 40 from flowing out, the signal lead-out pin 20 and the pressure introducing pipe 30 may be provided. Flange portion 21 on both of the pipes 30,
32 is preferably provided.

[0015]

As described above, according to the first aspect of the present invention, the chip in which the pressure-sensitive semiconductor element and the glass pedestal are joined is airtightly joined to the stem pedestal or the pressure introducing pipe for introducing pressure by the joining material. Since the bonding step and the sealing step of hermetically sealing the signal lead-out pin of the pressure-sensitive semiconductor element to the stem pedestal with the sealing material are performed simultaneously, the chip bonding and the stem pedestal sealing in one step. It is possible to simultaneously perform the above, and it is possible to reduce the number of joining steps, simplify the manufacturing method, and reduce the manufacturing cost.

According to the invention of claim 2, since the bonding material in the bonding step of claim 1 and the sealing material in the sealing step are the same composed of the bonding material and the sealing material, the effect of claim 1 In addition to,
The material supply becomes easy, and the manufacturing process can be further simplified. According to the invention of claim 3, the bonding material having a linear expansion coefficient close to that of the glass pedestal and the sealing material having a linear expansion coefficient close to that of the signal extraction pin or the stem pedestal are separately supplied. In addition to the effect of the above, it becomes possible to make a structure in which thermal stress due to heating at the time of joining is small and it is resistant to thermal fatigue. Furthermore, by selecting a joining material and a sealing material by a linear expansion coefficient, It is possible to simultaneously perform sealing and joining with materials having different characteristics in the sealing portion.

The invention of claim 4 is the invention of claim 1 or claim 2.
Alternatively, in addition to the effect of claim 1 or claim 2 or claim 3, by performing the bonding step and the sealing step at the same time after the surface of the signal extraction pin of claim 3 is plated with gold, the signal extraction pin is obtained. You only have to apply gold plating on the
It is possible to achieve bonding while achieving cost reduction.

According to the invention of claim 5, by supplying the sintered sealing material of claim 3 to the sealing portion of the stem pedestal, in addition to the effect of claim 3, setting is performed by the sintered sealing material. The positioning of each member at this time becomes easy, and the manufacturing process is further simplified. According to the invention of claim 6, the glass pedestal of the chip is made to penetrate through the square hole formed in the stem pedestal of claim 1, 2 or 3, whereby the glass pedestal of claim 1 or 2 or 3 is formed. In addition to the effect, the stem pedestal can be used to easily position the chip in the rotation direction, and wire bonding of the signal lead-out pin becomes easy.

According to the invention of claim 7, in addition to the effect of claim 1, the glass pedestal of claim 1 is provided with a square flange portion, and in addition to the effect of claim 1, positioning of the tip and the pressure introducing pipe or the stem pedestal is easy. Becomes The invention of claim 8 is the invention of claim 5.
For the positioning for positioning the chip and the pressure introducing pipe into this through hole, the through hole into which the glass pedestal of the chip and the pressure introducing pipe are inserted in communication with each other is formed in the sintered sealing material. Since the step is formed, in addition to the effect of the fifth aspect, it is possible to easily position the chip and the pressure introducing pipe by using the sintered sealing material.

According to a ninth aspect of the present invention, a counterbore is formed at the tip of the pressure introducing pipe according to the first aspect for dropping the chip and the bonding material, respectively, and the chip and the bonding material are positioned by the counterbore, and at the same time the chip is positioned. In addition to the effect of the third aspect, the tip can be easily positioned and joined to the pressure introducing pipe, and the tip can be joined at an accurate position.

According to the invention of claim 10, a storage recess for accommodating the chip and the bonding material is formed in the stem pedestal of claim 1, and the bonding material is supplied to the periphery of the chip. In addition, the stem pedestal can be used to join the tip in the correct position. According to the invention of claim 11, since the bonding material of claim 3 is supplied to the bonding portion by screen printing, in addition to the effect of claim 3,
The cost of the bonding material can be reduced, the bonding material can be easily supplied to the bonding portion of the chip, and the positioning of the bonding material can be facilitated.

According to a twelfth aspect of the present invention, the joining material according to the third aspect is similar to a joining material having a linear expansion coefficient close to that of the glass pedestal of the chip and an expansion coefficient of the stem pedestal or the pressure introducing pipe. Since it has a two-layer structure with a sealing material having a linear expansion coefficient, in addition to the effect of claim 3, the glass pedestal of the chip, the stem pedestal, and the stem pedestal have a linear expansion coefficient close to that of the pressure introducing pipe, respectively. By using the bonding material, the temperature dependence on the measurement accuracy is reduced, and the thermal stress at the time of bonding is relaxed.

According to a thirteenth aspect of the present invention, holding means for holding the sealing material of the second or third aspect on the stem pedestal is provided on at least one of the signal lead-out pin or the pressure introducing pipe of the pressure-sensitive semiconductor element. Thereby, in addition to the effect of claim 2 or claim 3, the holding means can effectively prevent the sealing material from flowing out of the stem pedestal when the sealing material is heated. This can be performed reliably, and the positioning function of each member in the sealing material is not impaired.

According to a fourteenth aspect of the present invention, the pressure-sensitive semiconductor element and the glass pedestal are joined to the stem pedestal or a pressure introducing pipe for introducing pressure to the chip, and the stem pedestal is provided with the signal lead-out pin. Since the sealing material is supplied across the airtightly sealed portion, the chip bonding and the stem pedestal sealing material can be facilitated and the chip bonding strength can be increased. it can.

According to a fifteenth aspect of the present invention, the sealing material according to the fourteenth aspect is provided by straddling the joint portion and the sealing portion on the inner surface of the stem pedestal on the housing side.
In addition to the effect of 4, the portion exposed to the outside of the sealing material is reduced, so that it is possible to prevent corrosion of the sealing portion and improve the strength against external pressure. According to the sixteenth aspect of the present invention, since the entire surface of the signal lead-out pin of the fourteenth aspect is plated with gold, the electric resistance of the signal lead-out pin can be reduced in addition to the effect of the fourteenth aspect.

[Brief description of drawings]

1A and 1B are cross-sectional views of an embodiment of the present invention.

2 (a) to 2 (d) are perspective views illustrating a manufacturing process of the above chip.

FIG. 3 is a flowchart of the above.

FIG. 4 is a cross-sectional view of the above finished product.

5A and 5B are cross-sectional views of another embodiment of the present invention.

6 (a) and 6 (b) are a plan view and a cross-sectional view of the above-mentioned sintered bonding material.

FIG. 7 (a) is an exploded cross-sectional view of each member of the above, (b).
(C) is a plan view and a sectional view for explaining a setting state of each member, and (d) and (e) are a plan view and a sectional view for explaining a heating and joining state of each member.

FIG. 8 is a cross-sectional view of the above finished product.

9A and 9B show still another embodiment of the present invention, in which FIG. 9A is an exploded sectional view of each member, FIGS. 9B and 9C are plan views and sectional views for explaining a setting state of each member, and FIG. (E) is a plan view and a sectional view for explaining a heating and joining state of each member.

FIG. 10 is a cross-sectional view of the above finished product.

11A and 11B show still another embodiment of the present invention, FIG. 11A is a flowchart, and FIG. 11B is a sectional view of a signal lead-out pin.

12 (a) and (b) are a plan view and a sectional view of still another embodiment of the present invention.

FIG. 13 (a) is an exploded sectional view of each member of the above, (b).
Is a sectional view for explaining the setting state of each member, (c)
FIG. 4 is a cross-sectional view illustrating a heating and joining state of each member.

14 (a) and (b) are a plan view and a sectional view of still another embodiment of the present invention.

FIG. 15 (a) is an exploded cross-sectional view of each member of the above, (b).
Is a sectional view for explaining the setting state of each member, (c)
FIG. 4 is a cross-sectional view illustrating a heating and joining state of each member.

FIG. 16 is a cross-sectional view of the above finished product.

17 (a) to 17 (f) are explanatory views of yet another embodiment of the present invention.

18 (a) to 18 (d) are explanatory views of still another embodiment of the present invention.

19 (a) to (d) are explanatory views of still another embodiment of the present invention.

20 (a) to (d) are explanatory views of still another embodiment of the present invention.

21 (a) to (d) are explanatory views of still another embodiment of the present invention.

22 (a) to (d) are explanatory views of still another embodiment of the present invention.

23A to 23C are a plan view of a stem pedestal, a plan view of a bonding material, and a cross-sectional view of the bonding material according to still another embodiment of the present invention.

FIGS. 24 (a) and 24 (b) are cross-sectional views for explaining setting and heat bonding of the respective members of the same.

FIG. 25 (a) to (d) are explanatory views of still another embodiment of the present invention.

26 (a) to (d) are explanatory views of still another embodiment of the present invention.

27 (a) and 27 (b) are perspective views of still another embodiment of the present invention.

28 (a) and 28 (b) are cross-sectional views for explaining setting and heat bonding of the above respective members.

29 (a) and 29 (b) are sectional views of still another embodiment of the present invention.

30 (a) and 30 (b) are cross-sectional views illustrating a usage state of the bonding material of FIG. 29.

31 (a) and (b) are a sectional view and a plan view of still another embodiment of the present invention, and (c) and (d) are a sectional view and a plan view of yet another embodiment of the present invention.

32 (a) and 32 (b) are cross-sectional views for explaining setting and heat bonding of the above members.

FIGS. 33 (a) and 33 (b) are cross-sectional views for explaining setting and heat bonding of the above respective members.

34A to 34D are cross-sectional views illustrating a conventional manufacturing process.

FIG. 35 is a conventional flowchart.

36A and 36B are cross-sectional views illustrating another conventional manufacturing process.

FIG. 37 is another conventional flowchart.

FIG. 38 is still another conventional flowchart.

[Explanation of symbols]

 1 chip 2 pressure-sensitive semiconductor element 3 glass pedestal 10 stem pedestal 20 signal extraction pin 40 sealing material 50 joining material 60 housing

Claims (16)

[Claims] 1. A method for manufacturing a semiconductor pressure sensor, comprising: a pressure-sensitive semiconductor element for measuring a pressure of a fluid introduced from the outside; and a signal lead-out pin of the pressure-sensitive semiconductor element supported on a stem pedestal. A bonding step in which a chip in which a pressure semiconductor element and a glass pedestal are joined is airtightly joined to a stem pedestal or a pressure introducing pipe for introducing pressure with a joining material, and a signal lead-out pin of the pressure-sensitive semiconductor element is sealed to the stem pedestal A method of manufacturing a semiconductor pressure sensor, characterized in that a sealing step of hermetically sealing with a stopper is performed at the same time. 2. The method of manufacturing a semiconductor pressure sensor according to claim 1, wherein the bonding material in the bonding step and the sealing material in the sealing step are the same composed of the bonding material and the sealing material. . 3. The semiconductor pressure according to claim 1, wherein the bonding material having a linear expansion coefficient close to that of the glass pedestal and the sealing material having a linear expansion coefficient close to that of the signal extraction pin or the stem pedestal are separately supplied. Sensor manufacturing method. 4. The manufacturing of a semiconductor pressure sensor according to claim 1, wherein the bonding step and the sealing step are performed at the same time after gold plating is applied to the surface of the signal lead-out pin. Method. 5. The method for manufacturing a semiconductor pressure sensor according to claim 3, wherein the sintered sealing material is supplied to the sealing portion of the stem pedestal. 6. The method for manufacturing a semiconductor pressure sensor according to claim 1, wherein the glass pedestal of the chip is penetrated through a square hole formed in the stem pedestal. 7. The method of manufacturing a semiconductor pressure sensor according to claim 1, wherein the glass pedestal is provided with a rectangular collar portion. 8. A through hole into which the glass pedestal of the chip and the pressure introducing pipe are inserted in communication with each other is formed in the sintered sealing material, and the chip and the pressure introducing pipe are positioned in this through hole. 6. The method for manufacturing a semiconductor pressure sensor according to claim 5, wherein a positioning step is formed for this purpose. 9. A counterbore for dropping a tip and a joining material into the tip of a pressure introducing pipe, respectively, and positioning the tip and the joining material by the counterbore and simultaneously joining the tip. Item 2. A method of manufacturing a semiconductor pressure sensor according to item 1. 10. The method for manufacturing a semiconductor pressure sensor according to claim 1, wherein a storage recess for storing the chip and the bonding material is formed in the stem pedestal, and the bonding material is supplied around the chip. 11. The method of manufacturing a semiconductor pressure sensor according to claim 3, wherein the bonding material is supplied to the bonding portion by screen printing. 12. A bonding material, wherein the bonding material has a linear expansion coefficient close to that of the glass pedestal of the chip, and a sealing material having a linear expansion coefficient close to that of the stem pedestal or pressure introducing pipe. 4. The method for manufacturing a semiconductor pressure sensor according to claim 3, wherein the method has a two-layer structure. 13. The holding means for holding the sealing material on the stem pedestal is provided on at least one of the signal lead-out pin and the pressure introducing pipe of the pressure-sensitive semiconductor element. Of manufacturing semiconductor pressure sensor of. 14. A semiconductor pressure sensor comprising a pressure-sensitive semiconductor element for measuring the pressure of a fluid introduced from the outside, wherein a signal lead-out pin of the pressure-sensitive semiconductor element is supported by a stem pedestal. The glass pedestal is sealed by straddling the joint where the chip is joined to the stem pedestal or the pressure introducing pipe that introduces pressure, and the sealing portion that hermetically seals the signal extraction pin on the stem pedestal. A semiconductor pressure sensor characterized in that a stop material is supplied. 15. The semiconductor pressure sensor according to claim 14, wherein the sealing material is supplied across the joint portion and the sealing portion on the inner surface of the stem pedestal on the housing side. 16. The semiconductor pressure sensor according to claim 14, wherein the entire surface of the signal lead-out pin is plated with gold.