JPH0817751A - Horizontal type process tube - Google Patents

Abstract

PURPOSE:To uniformize the concentration of a process gas in a process part by constituting a gas exhaust part of a plurality of openings which are formed in the tube of an intermediate part between the process part and the entrance and an exhaust tube to which a plurality of exhaust tubes are connected together. CONSTITUTION:A gas exhaust part 150A is formed between a process part 140 and an entrance 120. The gas exhaust part 150A is constituted of three small openings 51A, 51B, 51C formed in both side surfaces and in the lower part of a tube main body 101, an exhaust tube 52A which is a straight tube connected to an opening 51A at its one end, an exhaust tube 52B which is nearly L-type, and an exhaust tube 52C which is nearly reverse L-type and connected to the opposite side surface to the side surface to which the exhaust tube 52B is connected. When the exhaust gas is discharged from the openings 51A, 51B, 51C and the exhaust tubes 52A, 52B, 52C, the concentration of a process gas in the process part 140 by the openings 51A, 51B, 51C of the tube main body can be kept uniform.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a horizontal process tube such as a process tube for a horizontal diffusion furnace which is suitable for use in diffusing impurities into a surface-treated workpiece such as a semiconductor wafer. is there.

[0002]

2. Description of the Related Art FIG. 5 and FIG. 6 show a case where a horizontal diffusion furnace process tube is used as a conventional horizontal process tube and a semiconductor wafer is taken as a surface-treated workpiece, and impurities are diffused on the surface of the semiconductor wafer. Will be explained. FIG. 5 shows a prior art tube,
5A is a cross-sectional side view, FIG. 6B is a cross-sectional view taken along the line AA in FIG. 5A, and FIG. 6 shows distribution of various gases in the tube in the cross-sectional view taken along the line BB in FIG. 5A. It is a distribution map.

Reference numeral 100 generally refers to a prior art horizontal process tube. This horizontal process tube 10
Reference numeral 0 denotes a tube body 101 made of quartz, a gas supply port 110 is formed at one end of the dome shape, and an inlet / outlet 120 having an entire surface opened at the other end, and a shutter for opening / closing the inlet / outlet 120. 130 is attached. The process section 140 extends from the gas supply port 110 to the middle of the tube body 101.
A gas exhaust unit 150 is formed between the inlet / outlet port 40 and the inlet / outlet port 120. The gas exhaust unit 150 includes a small opening 151 formed in a sidewall of the tube body 101 and an exhaust pipe 152 communicating with the opening 151. It is configured.

The horizontal process tube 1 having such a configuration
When the impurities are diffused on the surface of the semiconductor wafer at 00, the boat 160 holding a plurality of semiconductor wafers S at a predetermined interval is opened by the shutter 130 and the door 12 is opened.
0 to the process part 140 of the tube body 101
, And after closing the shutter 130, process gas is supplied from the gas supply port 110 while heating with a heater (not shown), and the opening 15
1 and the exhaust pipe 152 to exhaust the exhaust gas.

When phosphorus is diffused as an impurity on the surface of the semiconductor wafer S, the inside of the horizontal process tube 100 is
It is heated to 00 to 1000 ° C., and N ₂ 19.5 liters POCl ₃ 73 mg O ₃ 320 cc is used as a process gas every minute. Thus, phosphorus diffuses on the surface of the semiconductor wafer S, and Cl ₂ or the like is exhausted from the exhaust pipe 152.

[0006]

However, the opening 1
Since the 51 and the exhaust pipe 152 are formed only at one place on the side wall of the tube body 101, the shutter 13
Due to the action of the air that has entered through the gap between 0 and the inlet / outlet 120, the various gas distributions in the process section 140 from the opening 151 of the tube body 101 are as shown in FIG. On the other hand, the process gas concentration in the exhaust pipe 152 is low, and the lower part becomes almost air, and the process gas concentration in the tube body 101 becomes non-uniform, so that phosphorus cannot be uniformly diffused on the surfaces of all the semiconductor wafers S. There was a flaw. Therefore,
An object of the present invention is to provide a tube capable of making the process gas concentration of the process section 140 uniform.

[0007]

Therefore, the first aspect of the present invention
In the horizontal process tube, the process gas supply port, the process part, the inlet / outlet of the surface-treated workpiece, the gas exhaust part, etc., in the horizontal process tube, the gas exhaust part is connected to the process part and the inlet / outlet port. The above problem is solved by configuring a plurality of openings formed in the tube in the middle part of the above and a plurality of exhaust pipes connected to these openings into a single exhaust pipe.

Further, in the second horizontal process tube of the present invention, in the horizontal process tube comprising a process gas supply port, a process section, an inlet / outlet port for a surface-treated workpiece, a gas exhaust section, etc. The above-described problem is solved by configuring the exhaust part with a plurality of openings formed in the entire circumference of the tube in the intermediate part between the process part and the entrance and exit and an exhaust pipe covered so as to surround these openings.

[0009]

Therefore, since the reaction gas can be exhausted from the plurality of openings, the flow of the process gas can be made uniform, and the suction of the air can be suppressed, so that the process can be stabilized in the process section.

[0010]

EXAMPLES Next, examples of the horizontal process tube of the present invention will be described with reference to FIGS. 1 shows a horizontal type process tube according to a first embodiment of the present invention. FIG. 1A is a sectional side view, FIG. 1B is a sectional view taken along the line AA in FIG. 1A, and FIG. FIG. 4 is a distribution diagram showing distributions of various gases in the horizontal process tube in a cross-sectional view taken along the line BB of FIG. 1A, and FIG. 3 shows a horizontal process tube according to a second embodiment of the present invention, FIG. A is a sectional side view, and FIG. B is a sectional view taken along the line AA of FIG.
FIG. 4 is a distribution diagram showing distributions of various gases in the horizontal process tube in the cross-sectional view taken along the line BB of FIG. 3A. The same components as those of the conventional horizontal process tube will be described with the same reference numerals.

Next, a horizontal type process tube according to a first embodiment of the present invention will be described with reference to FIGS. 1 and 2. Reference numeral 1 generally refers to the horizontal process tube of the present invention. The horizontal process tube 1 has a gas supply port 110 formed at one end of a dome-shaped tube body 101, as in the prior art.
The other end of 1 is formed with an entrance / exit 120 whose entire surface is open, and a shutter 130 for opening / closing the entrance / exit 120 is attached to the entrance / exit 120. The process unit 140 extends from the gas supply port 110 to the middle of the tube body 101.

The process section 140 and the doorway 120
A gas exhaust part 150A is formed between the gas exhaust part 150A and the gas exhaust part 150A, and three small openings 51A, 51B, 5B formed in the lower part and both side surfaces of the tube body 101 are connected to the gas exhaust part 150A.
1C and a straight pipe exhaust pipe 5 having one end connected to the opening 51A
2A and an opening 51B, one end of which is connected to the side surface of the exhaust pipe 52A and the other end of which is substantially L-shaped exhaust pipe 52B.
And a substantially inverted L-shaped exhaust pipe 52C having one end connected to the opening 51C and the other end connected to a side surface of the exhaust pipe 52A opposite to a side surface to which the exhaust pipe 52B is connected. did.

The horizontal process tube 1 having such a configuration
When diffusing impurities on the surface of a semiconductor wafer with,
As in the case of the horizontal process tube 100 according to the related art, the boat 160 holding a plurality of semiconductor wafers S at a predetermined interval is opened by opening the shutter 130, and the entrance 12 is opened.
From 0 to the process part 140 of the tube body 101, and after closing the shutter 130, the gas supply port 11 is heated while being heated by a heater (not shown).
Supply process gas from 0 and said opening 51A,
The exhaust gas is exhausted from 51B, 51C and the exhaust pipes 52A, 52B, 52C.

Therefore, the three openings 51A, 51B,
By providing 51C and the three exhaust pipes 52A, 52B, 52C, even if air enters through the gap between the shutter 130 and the inlet / outlet 120, the process unit 140 near the openings 51A, 51B, 51C of the tube body 101. 2, the process gas concentration in the tube body 101 is kept relatively uniform as shown in FIG. 2, and can be greatly improved as compared with the gas distribution in the conventional horizontal process tube 100. Impurities such as phosphorus can be uniformly diffused on the surfaces of all the semiconductor wafers S.

Next, a horizontal process tube according to a second embodiment of the present invention will be described with reference to FIGS. 3 and 4. Reference numeral 10 generally indicates the horizontal process tube of the present invention. As in the prior art and the first embodiment, the horizontal process tube 10 also has a gas supply port 110 formed at one end of a dome-shaped tube body 101, and the other end of the tube body 101 has an entire surface. A doorway 120 that is open is formed, and a shutter 130 that opens and closes the doorway 120 is attached to the doorway 120. From the gas supply port 110 to the tube body 101
Up to the middle, the process unit 140.

The process section 140 and the entrance / exit 120
A gas exhaust unit 150B, which is a feature of the horizontal process tube 10, is formed between the two. The gas exhaust unit 150B has a plurality of small openings 51 formed at predetermined intervals all around a predetermined portion of the tube body 101 and the tube body 10 so as to cover the plurality of openings 51.
1. An annular exhaust pipe 52 having a certain thickness and formed concentrically with 1.
And a common exhaust pipe 53 connected to the exhaust pipe 52.

Therefore, in the horizontal process tube 10 of this embodiment, the exhaust pipe 52 is formed integrally with the tube body 101, so that the horizontal process tube 10 can be structured more robustly than the horizontal process tube 1 of the first embodiment. Easy and easy to manufacture.

The plurality of openings 51 and the exhaust pipe 52 are also provided.
Is formed on the entire circumference of a part of the tube body 101, so that even if air enters through the gap between the shutter 130 and the inlet / outlet 120, various gas distributions in the process section 140 near the opening 51 of the tube body 101 are achieved. Is shown in FIG.
As shown in FIG. 5, the process gas concentration in the tube body 101 is kept more uniform as compared with the horizontal process tube 1 of the first embodiment, and phosphorus is uniformly diffused on the surfaces of all the semiconductor wafers S. can do.

In the above description, the case where impurities are diffused on the surface of the semiconductor wafer S has been described as an example, but the horizontal process tube of the present invention can also be used when forming an insulating film on the surface of the semiconductor wafer S. It goes without saying that you can do it.

[0020]

As described above, according to the horizontal process tube of the present invention, the reaction gas can be exhausted from the plurality of openings formed around the tube body, so that the flow of the process gas becomes uniform and Since the intake of air can be suppressed, the process can be stabilized in the process section. Therefore, the surface of the surface-treated workpiece such as a semiconductor wafer can be uniformly processed, and the number of processed wafers per batch can be increased.

[Brief description of drawings]

1A and 1B show a horizontal process tube according to a first embodiment of the present invention, wherein FIG. 1A is a sectional side view and FIG. 1B is a sectional view taken along the line AA of FIG. 1A.

FIG. 2 is a distribution diagram showing distributions of various gases in a horizontal process tube in a cross-sectional view taken along the line BB of FIG. 1A.

3 shows a horizontal process tube according to a second embodiment of the present invention, FIG. 3A is a sectional side view, and FIG. 3B is a sectional view taken along the line AA of FIG.

FIG. 4 is a distribution diagram showing distributions of various gases in a horizontal process tube in a cross-sectional view taken along the line BB of FIG. 3A.

FIG. 5 shows a conventional process tube for a horizontal diffusion furnace, in which FIG. 5A is a sectional side view and FIG. 3B is A in FIG.
It is a sectional view on the -A line.

FIG. 6 is a distribution diagram showing distributions of various gases in a horizontal diffusion furnace process tube in a cross-sectional view taken along the line BB of FIG. 5A.

[Explanation of symbols]

S Semiconductor wafer 1 Horizontal process tube which is the first embodiment of the present invention 10 Horizontal process tube which is the second embodiment of the present invention 101 Tube body 110 Gas supply port 120 Entrance / exit 130 Shutter 140 Process part 150A Gas exhaust part 150B Gas exhaust part 160 Boat 51 Opening 51A Opening 51B Opening 51C Opening 52 Exhaust pipe 52A Exhaust pipe 52B Exhaust pipe 52C Exhaust pipe 53 Common exhaust pipe

Claims (2)

[Claims] 1. A horizontal process tube comprising a tube having a process gas supply port, a process part, an inlet / outlet for a surface-treated workpiece, a gas exhaust part, etc., wherein the gas exhaust part is intermediate between the process part and the inlet / outlet. A horizontal process tube comprising a plurality of openings formed in the tube of the section and a plurality of exhaust pipes connected to these openings, which are connected to a single exhaust pipe. 2. A horizontal process tube comprising a tube formed by a process gas supply port, a process part, an inlet / outlet of a surface-treated workpiece, a gas exhaust part, etc., wherein the gas exhaust part is intermediate between the process part and the inlet / outlet. A horizontal process tube comprising a plurality of openings formed in the entire circumference of the tube and an exhaust pipe covering the openings so as to surround the openings.