JPH0817722A - Substrate rotation-type treatment-liquid coating apparatus - Google Patents

Substrate rotation-type treatment-liquid coating apparatus

Info

Publication number
JPH0817722A
JPH0817722A JP17329694A JP17329694A JPH0817722A JP H0817722 A JPH0817722 A JP H0817722A JP 17329694 A JP17329694 A JP 17329694A JP 17329694 A JP17329694 A JP 17329694A JP H0817722 A JPH0817722 A JP H0817722A
Authority
JP
Japan
Prior art keywords
substrate
suction
rotating means
back surface
cleaning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17329694A
Other languages
Japanese (ja)
Inventor
Manabu Yabe
学 矢部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dainippon Screen Manufacturing Co Ltd
Original Assignee
Dainippon Screen Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dainippon Screen Manufacturing Co Ltd filed Critical Dainippon Screen Manufacturing Co Ltd
Priority to JP17329694A priority Critical patent/JPH0817722A/en
Publication of JPH0817722A publication Critical patent/JPH0817722A/en
Pending legal-status Critical Current

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  • Coating Apparatus (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To prevent the rear of a substrate from being contaminated in a chain manner in a substrate rotation-type treatment-liquid coating apparatus. CONSTITUTION:A rotary stand 1 which is provided with a plurality of substrate support pins 6 is coupled to the upper end of a shaft 3 which can be turned around the rotation center PI, a vertical shaft 7 which is coupled to a suction stand 10 which sucks and supports a substrate-'W is fitted internally to the shaft 3 via spline fitting mechanisms 8. The suction stand 10 can be raised and lowered by the expansion and contraction of a rod 16a for an air cylinder 16. By its raising and lowering action, the substrate W is delivered between the substrate support pins 6 and the suction stand 10. While the substrate W which has been supported by the substrate support pins 6 is being turned, a cleaning liquid is jetted from a cleaning-liquid supply nozzle 20, a suction region on the rear of the substrate is cleaned, and the substrate W is then delivered. While the substrate W which has been supported by the suction stand 10 is being turned, the surface of the substrate is coated with a treatment liquid which is discharged from a treatment-liquid supply nozzle 22.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体ウエハや液晶表
示器用ガラス基板、フォトマスク用ガラス基板、光ディ
スク用基板等(以下、これらを基板という)の裏面の吸
着領域を真空吸着して、基板を回転中心周りで水平回転
させながら、基板表面に吐出された、フォトレジスト等
の処理液を基板表面に塗布する基板回転式処理液塗布装
置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate such as a semiconductor wafer, a glass substrate for a liquid crystal display, a glass substrate for a photomask, a substrate for an optical disk, etc. The present invention relates to a substrate rotation type processing liquid coating device for coating a substrate surface with a processing liquid such as a photoresist discharged onto the substrate surface while horizontally rotating the substrate around the rotation center.

【0002】[0002]

【従来の技術】従来のこの種の基板回転式処理液塗布装
置は、基板裏面の回転中心付近の吸着領域を真空吸着し
て、基板を回転中心周りで水平回転させる基板回転台
と、基板回転台に支持された基板の表面に処理液を吐出
する処理液吐出ノズルとが処理室内に設置されて構成さ
れている。
2. Description of the Related Art A conventional substrate rotating type processing liquid coating apparatus of this type includes a substrate rotating table for vacuum-sucking a suction area near a rotation center on a back surface of a substrate to horizontally rotate the substrate around the rotation center, and a substrate rotation table. A processing liquid discharge nozzle for discharging the processing liquid onto the surface of the substrate supported by the table is installed in the processing chamber.

【0003】そして、処理室内に搬入された基板は、そ
の裏面の吸着領域が基板回転台に真空吸着され、基板を
水平回転させながら、その遠心力で処理液吐出ノズルか
ら基板表面に吐出された処理液(フォトレジスト等)を
基板表面全面に均一に塗布する。
The suction area of the back surface of the substrate carried into the processing chamber is vacuum-sucked by the substrate rotating table, and while the substrate is horizontally rotated, the substrate is discharged from the processing liquid discharge nozzle to the surface of the substrate by the centrifugal force. A treatment liquid (photoresist or the like) is uniformly applied to the entire surface of the substrate.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、このよ
うな構成を有する従来例の場合には、次のような問題が
ある。すなわち、従来装置では、基板回転台は基板裏面
の吸着領域を真空吸着しており、基板裏面と基板回転台
とは密着される。このような構成の場合、例えば、基板
裏面(特に、吸着領域)が汚れていた基板が搬入された
とき、その基板の汚れが、基板回転台に付着し基板回転
台に付着した汚れが、以降に搬入されてくる基板の裏面
の吸着領域に付着して、汚れていなかった基板を汚染す
るという悪循環を繰り返すという問題がある。
However, the prior art having such a structure has the following problems. That is, in the conventional apparatus, the substrate turntable vacuum sucks the suction area on the back surface of the substrate, and the back surface of the substrate and the substrate turntable are in close contact with each other. In the case of such a configuration, for example, when a substrate whose back surface (particularly, the suction area) is dirty is carried in, the dirt on the substrate adheres to the substrate turntable and the dirt adhered to the substrate turntable There is a problem that a vicious cycle of repeating the vicious cycle of adhering to the suction area on the back surface of the substrate carried in and contaminating the substrate that has not been soiled.

【0005】基板裏面が汚染されると、処理液(フォト
レジスト)の塗布の次工程である露光工程において、フ
ォーカス異常が起こる等、この種の基板処理工程におい
ては、基板の汚染は製品の品質等の上で無視できないこ
とが知られている。
When the back surface of the substrate is contaminated, a focus abnormality occurs in the exposure step which is the next step of coating the processing liquid (photoresist). In this type of substrate processing step, the contamination of the substrate is the quality of the product. It is known that the above cannot be ignored.

【0006】本発明は、このような事情に鑑みてなされ
たものであって、基板裏面の連鎖的な汚染を防止するこ
とができる基板回転式処理液塗布装置を提供することを
目的とする。
The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a substrate rotary processing liquid coating apparatus capable of preventing chained back surface contamination of the substrate.

【0007】[0007]

【課題を解決するための手段】本発明は、このような目
的を達成するために、次のような構成をとる。すなわ
ち、本発明は、処理室に搬入された基板の裏面の回転中
心付近の吸着領域を真空吸着して前記基板を前記回転中
心周りで水平回転させながら、前記基板表面に吐出され
た処理液を前記基板表面に塗布する基板回転式処理液塗
布装置において、前記基板裏面の吸着領域を真空吸着し
て、前記基板を前記回転中心周りで水平回転させる第1
の基板回転手段と、第1の基板回転手段に吸着支持され
た基板表面に処理液を吐出させる処理液吐出ノズルと、
前記基板裏面の端部を支持して、前記基板を前記回転中
心周りで水平回転させる第2の基板回転手段と、前記第
2の基板回転手段に支持された基板の前記吸着領域に洗
浄液を供給する洗浄液供給ノズルと、前記第1の基板回
転手段と前記第2の基板回転手段との間で基板を受け渡
す基板受渡し手段と、を前記処理室内に備えたものであ
る。
The present invention has the following constitution in order to achieve such an object. That is, according to the present invention, the processing liquid discharged onto the surface of the substrate is vacuum-sucked in the suction area near the rotation center of the back surface of the substrate loaded into the processing chamber to horizontally rotate the substrate around the rotation center. In a substrate rotating type processing liquid coating device for coating on the front surface of the substrate, a suction region of the back surface of the substrate is vacuum-sucked to horizontally rotate the substrate around the rotation center.
Substrate rotating means, a processing liquid discharge nozzle for discharging the processing liquid onto the surface of the substrate suction-supported by the first substrate rotating means,
Second substrate rotating means for supporting the end portion of the back surface of the substrate to horizontally rotate the substrate around the rotation center, and supplying the cleaning liquid to the adsorption area of the substrate supported by the second substrate rotating means. And a substrate transfer means for transferring the substrate between the first substrate rotating means and the second substrate rotating means.

【0008】[0008]

【作用】本発明の作用は次のとおりである。例えば、処
理室内に搬入されてきた基板は第2の基板回転手段に、
端部が保持され、その基板を水平回転しながら、洗浄液
供給ノズルから供給された洗浄液で、基板裏面の吸着領
域が洗浄される。次に、基板受渡し手段は、第2の基板
回転手段に保持された基板を、第1の基板回転手段に受
け渡し、第1の基板回転手段は、受け取った基板の裏面
の吸着領域を真空吸着する。そして、その状態で、基板
を回転中心周りで水平回転させて、処理液吐出ノズルか
ら基板表面に吐出された処理液を塗布する。
The operation of the present invention is as follows. For example, the substrate carried into the processing chamber is transferred to the second substrate rotating means,
The edge is held, and the suction area on the back surface of the substrate is cleaned with the cleaning liquid supplied from the cleaning liquid supply nozzle while horizontally rotating the substrate. Next, the substrate transfer means transfers the substrate held by the second substrate rotating means to the first substrate rotating means, and the first substrate rotating means vacuum-sucks the suction area on the back surface of the received substrate. . Then, in this state, the substrate is horizontally rotated around the rotation center to apply the treatment liquid ejected from the treatment liquid ejection nozzle onto the substrate surface.

【0009】すなわち、基板の裏面の吸着領域が真空吸
着される前に、その吸着領域を洗浄液で洗浄することが
できるので、基板裏面(特に吸着領域)が汚れた基板が
搬入されてきても、その汚れが以後に搬入されてくる基
板に、第1の基板回転手段を介して連鎖的に拡散するの
が防止できる。また、吸着領域の洗浄と処理液の塗布と
は、同一処理室内で行われるので、吸着領域の洗浄の
後、すぐに処理液の塗布が行え、これら各処理間に基板
の吸着領域が汚れることが防止でき、吸着領域のの洗浄
が無駄になることがない。さらに、第1、第2の基板回
転手段、処理液吐出、洗浄液供給の各ノズル、基板受渡
し手段が、同一処理室内に備えられているので、処理液
塗布装置に搬入される前に基板洗浄装置で基板の洗浄を
行うように構成された装置に比べて、省スペース化を図
ることもできる。
That is, since the suction area can be cleaned with the cleaning liquid before the suction area on the back surface of the substrate is vacuum-sucked, even if a substrate whose back surface (particularly the suction area) is dirty is carried in, It is possible to prevent the dirt from being diffused in a chain that is subsequently carried in via the first substrate rotating means. Further, since the cleaning of the adsorption area and the application of the processing liquid are performed in the same processing chamber, the processing liquid can be applied immediately after cleaning the adsorption area, and the adsorption area of the substrate is contaminated between these processings. Can be prevented, and cleaning of the suction area is not wasted. Further, since the first and second substrate rotating means, the processing liquid ejecting nozzles, the cleaning liquid supplying nozzles, and the substrate transferring means are provided in the same processing chamber, the substrate cleaning device before being carried into the processing liquid coating device. It is also possible to save space as compared with an apparatus configured to clean the substrate with.

【0010】また、上記手順と逆に、処理液の塗布を先
に行い、処理液の塗布の後吸着領域の洗浄を行うことも
でき、この場合には、本装置からの基板の搬出時に、吸
着領域が洗浄されるので、結果的に、第1の基板回転手
段を介して起こる基板の汚染の連鎖的な拡散を防止でき
る。
Further, contrary to the above procedure, the application of the treatment liquid may be performed first, and the adsorption area may be washed after the application of the treatment liquid. In this case, when the substrate is unloaded from the apparatus, Since the adsorption area is cleaned, it is possible to prevent the chain diffusion of the contamination of the substrate that occurs via the first substrate rotating means.

【0011】[0011]

【実施例】以下、図面を参照して本発明の一実施例を説
明する。図1は、本発明の第1実施例に係る基板回転式
処理液塗布装置の概略構成を示す平面図であり、図2
は、その縦断面図、図3は、図2のA−A矢視図であ
る。なお、本実施例および以下の各実施例では、半導体
ウエハの基板回転式処理液塗布装置を例に採り説明し、
以下では、半導体ウエハを基板Wという。
An embodiment of the present invention will be described below with reference to the drawings. 1 is a plan view showing a schematic configuration of a substrate rotary type processing liquid coating apparatus according to a first embodiment of the present invention.
Is a longitudinal sectional view thereof, and FIG. 3 is a view taken along the line AA of FIG. In the present embodiment and each of the following embodiments, a substrate rotation type processing liquid coating apparatus for semiconductor wafers will be described as an example.
Hereinafter, the semiconductor wafer is referred to as the substrate W.

【0012】図中、符号1は回転台を示し、この回転台
1は、基台2に回転中心P1周りに回転自在に支持され
た中空の回転軸3の上端に一体的に連結されている。回
転軸3は、ベルト式伝動機構4を介して、モータ5と連
動連結されている。すなわち、モータ5が回転駆動され
ると、回転台1は、回転中心P1周りで回転される構成
である。
In the figure, reference numeral 1 indicates a rotary table, which is integrally connected to an upper end of a hollow rotary shaft 3 which is rotatably supported by a base 2 around a rotation center P1. . The rotating shaft 3 is interlocked with a motor 5 via a belt type transmission mechanism 4. That is, when the motor 5 is rotationally driven, the rotary base 1 is rotated around the rotation center P1.

【0013】また、回転台1の上面には、複数個(図で
は6個)の基板支持ピン6が設けられている。これら基
板支持ピン6は、クランク状に形成されており、第1の
折り曲げ部6aに、基板Wの裏面の端部が載置され、第
2の折り曲げ部6bが、基板Wの側縁に当接して基板W
の水平方向への移動を規制するように構成されている。
なお、本実施例では、回転台1、回転軸3、ベルト式伝
動機構4、モータ5、基板支持ピン6が、本発明の第2
の基板回転手段を構成する。
A plurality of (six in the figure) substrate support pins 6 are provided on the upper surface of the turntable 1. These substrate support pins 6 are formed in a crank shape, the end of the back surface of the substrate W is placed on the first bent portion 6a, and the second bent portion 6b contacts the side edge of the substrate W. Touching substrate W
Is configured to regulate the horizontal movement of the.
In the present embodiment, the rotary base 1, the rotary shaft 3, the belt type transmission mechanism 4, the motor 5, and the substrate support pin 6 are the second parts of the present invention.
Of the substrate rotating means.

【0014】前記回転軸3の中空部内には、中空の鉛直
軸7がスプライン嵌合機構8を介して上下方向に摺動可
能で、回転軸3の回転に連動して回転可能に内嵌されて
いる。鉛直軸7の上端には、複数個の吸着孔9を有する
吸着台10が一体に連結されている。これら吸着孔9
は、吸着台10、鉛直軸7内に配設された管12、後述
するロータリージョイント部11に連結された管13を
介して、真空吸引源14に連通されている。
A hollow vertical shaft 7 is vertically slidable through a spline fitting mechanism 8 in the hollow portion of the rotary shaft 3, and is rotatably fitted in the hollow portion of the rotary shaft 3 in association with the rotation of the rotary shaft 3. ing. A suction base 10 having a plurality of suction holes 9 is integrally connected to the upper end of the vertical shaft 7. These suction holes 9
Is connected to a vacuum suction source 14 via a suction table 10, a tube 12 arranged in the vertical shaft 7, and a tube 13 connected to a rotary joint section 11 described later.

【0015】一方、鉛直軸7の下端はロータリージョイ
ント部11に支持され、ロータリージョイント部11
は、後述するエアーシリンダ16に連結された支持アー
ム15の先端部に支持されている。このロータリージョ
イント部11は、鉛直軸7を回動可能に支持するととも
に、鉛直軸7の停止、回転の状態にかかわらず、常に管
12と13とを連通状態に維持するように構成された連
結部材である。
On the other hand, the lower end of the vertical shaft 7 is supported by the rotary joint portion 11, and the rotary joint portion 11
Are supported by the tip of a support arm 15 connected to an air cylinder 16 described later. The rotary joint portion 11 rotatably supports the vertical shaft 7, and is configured to always maintain the pipes 12 and 13 in a communicating state regardless of the stopped or rotated state of the vertical shaft 7. It is a member.

【0016】すなわち、真空吸引源14が吸引駆動され
ると、吸着台10に載置された基板Wは、吸着台10に
当接する部分(吸着領域)が吸着台10に吸着支持さ
れ、また、モータ5が回転駆動されると、回転軸3、ス
プライン嵌合機構8を介して、鉛直軸7が回転される結
果、基板Wが水平回転される。なお、この回転中、上記
したように、ロータリージョイント部11を介して管1
2と13とが常に連通されているので、基板Wの吸着台
10への真空吸着は維持されている。また、この真空吸
引源14においては、気液分離状態で吸気し、吸引ポン
プなどに水分を吸引することがないように構成されてい
る。
That is, when the vacuum suction source 14 is driven by suction, the portion of the substrate W placed on the suction table 10 (suction area) is suction-supported by the suction table 10, and When the motor 5 is rotationally driven, the vertical shaft 7 is rotated via the rotary shaft 3 and the spline fitting mechanism 8, and as a result, the substrate W is horizontally rotated. During this rotation, as described above, the pipe 1 is inserted through the rotary joint 11.
Since 2 and 13 are always in communication with each other, the vacuum suction of the substrate W on the suction table 10 is maintained. Further, the vacuum suction source 14 is configured so as not to suck air in a gas-liquid separated state and suck water into a suction pump or the like.

【0017】本実施例では、ベルト式伝動機構4、モー
タ5、鉛直軸7、スプライン嵌合機構8、吸着孔9、吸
着台10、ロータリージョイント部11、管12、1
3、真空吸引源14が、本発明における第1の基板回転
手段を構成する。
In this embodiment, the belt type transmission mechanism 4, the motor 5, the vertical shaft 7, the spline fitting mechanism 8, the suction hole 9, the suction base 10, the rotary joint portion 11, the pipes 12 and 1 are provided.
3. The vacuum suction source 14 constitutes the first substrate rotating means in the present invention.

【0018】また、前記支持アーム15の基端部は、エ
アーシリンダ16のロッド16aに連結されており、エ
アーシリンダ16のロッド16aの伸縮により、ロータ
リージョイント部11、鉛直軸7が昇降して、吸着台1
0を上方位置(図2の二点鎖線で示す位置)と下方位置
(図2の実線で示す位置)との間で昇降されるように構
成されている。この吸着台10の昇降動作により、前記
基板支持ピン6と吸着台10との間で基板Wの受渡しを
行う。なお、管13が変形不可能な剛性の材質で構成さ
れている場合には、吸着台10、ロータリージョイント
部11の昇降に応じて伸縮できるように管13が構成さ
れて、管12と管13との連通状態を維持し、また、管
13が変形可能な軟性の材質で構成されている場合に
は、管13を長めにして、吸着台10、ロータリージョ
イント部11の昇降に応じて管13を変形して管12と
管13との連通状態を維持している。
The base end of the support arm 15 is connected to the rod 16a of the air cylinder 16, and the expansion and contraction of the rod 16a of the air cylinder 16 raises and lowers the rotary joint portion 11 and the vertical shaft 7, Adsorption table 1
0 is moved up and down between an upper position (a position indicated by a chain double-dashed line in FIG. 2) and a lower position (a position indicated by a solid line in FIG. 2). The substrate W is transferred between the substrate support pins 6 and the suction table 10 by the lifting operation of the suction table 10. When the pipe 13 is made of a non-deformable rigid material, the pipe 13 is configured so that it can be expanded and contracted according to the elevation of the suction table 10 and the rotary joint portion 11, and the pipe 12 and the pipe 13 When the pipe 13 is made of a deformable soft material, the pipe 13 is made longer and the suction base 10 and the rotary joint portion 11 are moved up and down. Is deformed to maintain the communication state between the pipe 12 and the pipe 13.

【0019】なお、本実施例では、支持アーム15、エ
アーシリンダ16が、本発明における基板受渡し手段を
構成する。
In this embodiment, the support arm 15 and the air cylinder 16 form the substrate transfer means of the present invention.

【0020】また、前記鉛直軸7内には、基台2に立設
された洗浄液供給管17が貫通されており、その基端部
は、管18を介して洗浄液供給源19に連通接続されて
いる。一方、洗浄液供給管17の先端部には洗浄液供給
ノズル20が取り付けられており、吸着台10が下方位
置に位置しているとき、洗浄液供給ノズル20の先端部
は吸着台10から突出した状態にあり、基板支持ピン6
に支持された基板Wの裏面の回転中心P1に臨んで、基
板Wの裏面の回転中心P1を含む吸着領域に向けて洗浄
液を噴射できるように構成されている。なお、吸着台1
0が上方位置に位置しているときには、この洗浄液供給
ノズル20は吸着台10内に収納された状態となり、吸
着台10による基板Wの真空吸着の邪魔にならないよう
になっている。
A cleaning liquid supply pipe 17 standing on the base 2 penetrates through the vertical shaft 7, and a base end portion of the cleaning liquid supply pipe 17 is connected to a cleaning liquid supply source 19 via a pipe 18. ing. On the other hand, the cleaning liquid supply nozzle 20 is attached to the tip of the cleaning liquid supply pipe 17, and when the suction table 10 is located at the lower position, the tip of the cleaning liquid supply nozzle 20 is projected from the suction table 10. Yes, substrate support pin 6
The cleaning liquid can be jetted toward the suction area including the rotation center P1 of the back surface of the substrate W supported by the back surface of the substrate W. In addition, adsorption table 1
When 0 is located at the upper position, the cleaning liquid supply nozzle 20 is accommodated in the suction table 10 so as not to interfere with the vacuum suction of the substrate W by the suction table 10.

【0021】また、前記回転台1の側方の第1の揺動支
点Y1を中心として揺動される処理液供給管21の先端
部には処理液吐出ノズル22が取り付けられている。こ
の処理液供給管21の基端部には、図示しない処理液供
給源が連通接続されている。また、処理液供給管21の
揺動動作により、上方位置に位置した吸着台10に吸着
支持された基板Wの表面の回転中心P1付近の上方の吐
出位置(図1、図2の二点鎖線で示す状態)と、その側
方の待機位置(図1の実線で示す状態)との間で、処理
液吐出ノズル22が変位されるように構成され、吐出位
置において処理液吐出ノズル22から基板表面に処理液
の吐出が行われる。
A processing liquid discharge nozzle 22 is attached to the tip of the processing liquid supply pipe 21 which is swung about the first swing fulcrum Y1 on the side of the rotary table 1. A processing liquid supply source (not shown) is communicatively connected to the base end of the processing liquid supply pipe 21. Further, due to the swing motion of the processing liquid supply pipe 21, the upper discharge position near the rotation center P1 of the surface of the substrate W suction-supported by the suction table 10 located at the upper position (two-dot chain line in FIGS. 1 and 2). Between the processing liquid ejection nozzle 22 and the substrate at the ejection position at the ejection position. The treatment liquid is discharged onto the surface.

【0022】また、本実施例には、処理液の塗布処理中
にバックリンスするためのバックリンス機構が付設され
ている。このバックリンス機構は、前記回転台1の側方
の第2の揺動支点Y2を中心として揺動されるクランク
状の洗浄液供給管23と、その基端部の洗浄液供給源2
4と、洗浄液供給管23を揺動させるモータ25等で構
成されている。洗浄液供給管23の揺動動作により、上
方位置に位置した吸着台10に吸着支持された基板Wの
裏面の、回転中心P1と基板Wの端縁の間のバックリン
ス位置(図1、図2の二点鎖線で示す状態)と、その側
方の待機位置(図1、図2の実線で示す状態)との間
で、洗浄液供給管23の先端部が変位されるように構成
され、処理液の塗布処理中、バックリンス位置に位置さ
れた洗浄液供給管23の先端部から洗浄液が供給するこ
とにより、バックリンスが行われる。
Further, in this embodiment, a back rinse mechanism for back rinsing during the coating treatment of the treatment liquid is additionally provided. This back rinse mechanism includes a crank-shaped cleaning liquid supply pipe 23 that is swung about a second swing fulcrum Y2 on the side of the rotary table 1 and a cleaning liquid supply source 2 at the base end thereof.
4 and a motor 25 for swinging the cleaning liquid supply pipe 23 and the like. The back rinse position between the rotation center P1 and the edge of the substrate W on the back surface of the substrate W suction-supported by the suction table 10 located at the upper position due to the swing motion of the cleaning liquid supply pipe 23 (FIGS. 1 and 2). (The state indicated by the two-dot chain line) and the standby position on the side thereof (the state indicated by the solid line in FIGS. 1 and 2) are configured so that the tip portion of the cleaning liquid supply pipe 23 is displaced. During the liquid application process, the back rinse is performed by supplying the cleaning liquid from the tip of the cleaning liquid supply pipe 23 located at the back rinse position.

【0023】なお、本実施例では、上記した第1、第2
の基板回転手段、基板受渡し手段、処理液吐出ノズル2
2、洗浄液供給ノズル20、バックリンス機構等が、図
の二点鎖線で示す処理室SR内に設けられている。
In this embodiment, the above-mentioned first and second
Substrate rotating means, substrate transfer means, processing liquid discharge nozzle 2
2, the cleaning liquid supply nozzle 20, the back rinse mechanism, and the like are provided in the processing chamber SR indicated by the chain double-dashed line in the figure.

【0024】次に、上記第1実施例装置による処理液の
塗布の手順を図4に示すフローチャートと、図5に示す
動作説明図等を参照して説明する。なお、この手順で
は、基板Wが処理室SR内に搬入されると、基板裏面の
吸着領域の洗浄を行い、その後、基板表面への処理液の
塗布を行う。従って、初期状態においては、吸着台10
等の第1の基板回転手段は下方位置に位置し、真空吸引
は解除されており、また、処理液吐出ノズル22とバッ
クリンス機構の洗浄液供給管23はそれぞれの待機位置
に待機された状態である。
Next, the procedure of applying the treatment liquid by the apparatus of the first embodiment will be described with reference to the flow chart shown in FIG. 4 and the operation explanatory diagram shown in FIG. In this procedure, when the substrate W is carried into the processing chamber SR, the suction area on the back surface of the substrate is cleaned, and then the processing liquid is applied to the front surface of the substrate. Therefore, in the initial state, the suction table 10
The first substrate rotating means such as is positioned at the lower position, the vacuum suction is released, and the processing liquid discharge nozzle 22 and the cleaning liquid supply pipe 23 of the back rinse mechanism are on standby at their respective standby positions. is there.

【0025】まず、前工程から図示しない搬送機構によ
って処理室SR内に搬入された基板Wは、図5(a)に
示すように、基板支持ピン6(第2の基板回転手段)に
支持される(ステップS1)。
First, the substrate W carried into the processing chamber SR by the transport mechanism (not shown) from the previous step is supported by the substrate support pins 6 (second substrate rotating means) as shown in FIG. 5A. (Step S1).

【0026】次に、図5(b)に示すように、回転台1
(第2の基板回転手段)が回転され、その状態で、洗浄
液供給ノズル20から洗浄液が噴射され、基板裏面の吸
着領域の洗浄が行われる(ステップS2)。このとき、
基板Wを回転しながら、洗浄処理を行っているので、基
板裏面の吸着領域に付着していた汚れは、基板Wの端縁
方向に流れる洗浄液とともに、基板Wの端縁から振り切
られ、汚れが基板裏面に残留しない。また、基板支持ピ
ン6による基板Wの支持は、単に基板Wを載置している
だけであるので、基板Wの端縁方向に流れる洗浄液が、
基板Wと基板支持ピン6との接触部分に進入し、基板W
の基板支持ピン6との接触部分の洗浄も同時に行われ、
また、基板支持ピン6の洗浄も行われる。
Next, as shown in FIG. 5B, the turntable 1
The (second substrate rotating means) is rotated, and in this state, the cleaning liquid is sprayed from the cleaning liquid supply nozzle 20 to clean the suction area on the back surface of the substrate (step S2). At this time,
Since the cleaning process is performed while rotating the substrate W, the dirt attached to the suction area on the back surface of the substrate is shaken off from the edge of the substrate W together with the cleaning liquid flowing toward the edge of the substrate W, and the dirt is removed. Does not remain on the backside of the board. Further, since the substrate W is supported by the substrate support pins 6 simply by mounting the substrate W, the cleaning liquid flowing toward the edge of the substrate W is
When the substrate W enters the contact portion between the substrate W and the substrate support pin 6, the substrate W
The contact portion of the substrate supporting pin 6 with is also cleaned at the same time,
The substrate support pins 6 are also cleaned.

【0027】次に、図5(c)に示すように、洗浄液供
給ノズル20から洗浄液の噴射を停止し、第2の基板回
転手段を高速回転して、基板裏面に付着した洗浄液を振
り切り乾燥させる(ステップS3)。
Next, as shown in FIG. 5C, the injection of the cleaning liquid from the cleaning liquid supply nozzle 20 is stopped, the second substrate rotating means is rotated at high speed, and the cleaning liquid adhering to the back surface of the substrate is shaken off and dried. (Step S3).

【0028】基板裏面が乾燥されると、第2の基板回転
手段の回転を停止し、図5(d)に示すように、吸着台
10(第1の基板回転手段)を上方位置まで上昇させ
て、基板支持ピン6から基板Wを吸着台10に受け取り
(吸着領域を吸着台10上に載置して)、真空吸引して
基板Wを吸着台10に吸着支持し、基板Wの受渡しを行
う(ステップS4)。
When the back surface of the substrate is dried, the rotation of the second substrate rotating means is stopped, and as shown in FIG. 5 (d), the suction table 10 (first substrate rotating means) is raised to the upper position. Then, the substrate W is received from the substrate support pins 6 to the suction table 10 (the suction area is placed on the suction table 10), vacuum suction is performed to suction-support the substrate W on the suction table 10, and the substrate W is delivered. Perform (step S4).

【0029】そして、図5(e)に示すように、処理液
吐出ノズル22を吐出位置に、バックリンス機構の洗浄
液供給管23の先端部をバックリンス位置にそれぞれ位
置させ、第1の基板回転手段を回転させながら、処理液
吐出ノズル22から基板Wの表面に所定量吐出された処
理液を遠心力により基板表面に均一に塗布する(ステッ
プS5)。この処理液塗布処理中、バックリンス機構の
洗浄液供給管23の先端部からは洗浄液が噴射されバッ
クリンスされる。この洗浄液は、遠心力で基板裏面の端
縁方向に流れるので、基板表面の端縁から振り切られた
処理液のミストが、基板裏面に回り込んで、基板裏面を
汚染するのが防止される。また、上記ステップS2にお
ける基板Wと基板支持ピン6との接触部分についても、
このバックリンスにより、当該接触部分はより完全に洗
浄される。
Then, as shown in FIG. 5 (e), the treatment liquid discharge nozzle 22 is positioned at the discharge position, and the tip of the cleaning liquid supply pipe 23 of the back rinse mechanism is positioned at the back rinse position to rotate the first substrate. While rotating the means, a predetermined amount of the processing liquid ejected from the processing liquid ejection nozzle 22 onto the surface of the substrate W is uniformly applied to the substrate surface by centrifugal force (step S5). During the process liquid application process, the cleaning liquid is sprayed and back rinsed from the tip of the cleaning liquid supply pipe 23 of the back rinse mechanism. Since this cleaning liquid flows toward the edge of the back surface of the substrate by centrifugal force, mist of the processing liquid shaken off from the edge of the front surface of the substrate is prevented from flowing into the back surface of the substrate and contaminating the back surface of the substrate. Also, regarding the contact portion between the substrate W and the substrate support pin 6 in step S2,
This back rinse cleans the contact area more completely.

【0030】処理液の塗布処理が完了すると、第1の基
板回転手段の回転を停止するとともに、洗浄液の噴射を
停止し、処理液吐出ノズル22とバックリンス機構の洗
浄液供給管23をそれぞれの待機位置に移動させ、基板
Wの真空吸着を解除して第1の基板回転手段を下方位置
に降下させて処理済基板Wを基板支持ピン6に受渡し、
その状態で、図示しない搬送機構によって、処理済基板
Wが処理室SRから搬出され、後工程(露光工程)に搬
送される(ステップS6)。なお、第1の基板回転手段
は、図1の右側に示す基板支持ピン6rが、次に搬入さ
れてくる基板Wのオリエンテーションフラット部ORの
所定部位fpを支持できる状態で回転が停止される必要
があるが、これは、例えば、光学式センサ等を用いて回
転の停止位置を制御すればよい。また、このステップS
6が終了すると、初期状態に戻っており、次に搬入され
てくる基板Wに対して同様の処理が繰り返される。
When the processing liquid application processing is completed, the rotation of the first substrate rotating means is stopped, the injection of the cleaning liquid is stopped, and the processing liquid discharge nozzle 22 and the cleaning liquid supply pipe 23 of the back rinse mechanism stand by respectively. Position, the vacuum suction of the substrate W is released, the first substrate rotating means is lowered to the lower position, and the processed substrate W is delivered to the substrate support pins 6.
In that state, the processed substrate W is carried out of the processing chamber SR by a carrying mechanism (not shown) and carried to a post-process (exposure process) (step S6). The rotation of the first substrate rotating means needs to be stopped in a state in which the substrate supporting pin 6r shown on the right side of FIG. 1 can support the predetermined portion fp of the orientation flat portion OR of the substrate W that is subsequently loaded. However, this may be achieved, for example, by controlling the rotation stop position using an optical sensor or the like. In addition, this step S
When 6 is finished, the initial state is restored, and the same process is repeated for the substrate W that is loaded next.

【0031】上記したように、基板裏面の吸着領域が真
空吸着される前に、その領域が洗浄されるので、吸着領
域が汚れた基板Wが搬入されても、その汚れが第1の基
板回転手段(吸着台10)を介して、以後に搬入されて
くる基板Wを汚染するのが防止できる。また、基板裏面
の吸着領域の洗浄と処理液の塗布を同一の処理室内で行
うので、基板裏面の吸着領域の洗浄の後、すぐに処理液
の塗布が行なえ、その間に吸着領域が汚れるいうことが
ないので、吸着領域の洗浄が無駄になることがない。
As described above, since the suction area on the back surface of the substrate is cleaned before the suction area is vacuum-sucked, even if the substrate W having the suction area contaminated is carried in, the contamination is caused by the first substrate rotation. It is possible to prevent the substrate W that is subsequently carried in from being contaminated via the means (suction table 10). In addition, since the cleaning of the adsorption area on the back surface of the substrate and the application of the processing liquid are performed in the same processing chamber, it is possible to apply the processing liquid immediately after cleaning the adsorption area on the back surface of the substrate, and the adsorption area becomes dirty in the meantime. Therefore, the cleaning of the adsorption area is not wasted.

【0032】なお、上述の手順において、ステップS5
の処理液の塗布処理が完了した後、ステップS6の処理
済の基板Wの搬出の前に、第2の基板回転手段で基板W
を支持して、基板裏面のうちの、第1の基板回転手段に
よる吸着領域の洗浄処理を行うためのステップを挿入し
てもよい。
In the above procedure, step S5
After the coating process of the processing liquid in step S6 is completed and before the processed substrate W is unloaded in step S6, the substrate W is rotated by the second substrate rotating means.
May be supported, and a step for cleaning the suction area of the back surface of the substrate by the first substrate rotating means may be inserted.

【0033】すなわち、処理液吐出ノズル22とバック
リンス機構の洗浄液供給管23をそれぞれの待機位置に
移動させ、第1の基板回転手段を下方位置に降下させ
て、第1の基板回転手段から第2の基板回転手段に基板
Wを受け渡し、次に、ステップS2、S3と同様の処理
で、吸着領域の洗浄と乾燥処理を行い、その後、ステッ
プS6の処理を実行する。
That is, the processing liquid discharge nozzle 22 and the cleaning liquid supply pipe 23 of the back rinse mechanism are moved to their respective standby positions, the first substrate rotating means is lowered to the lower position, and the first substrate rotating means moves to the first substrate rotating means. The substrate W is transferred to the second substrate rotating means, and then the adsorption region is cleaned and dried by the same process as steps S2 and S3, and then the process of step S6 is executed.

【0034】このような手順で行えば、基板Wの搬出の
直前に基板Wの吸着領域を中心とした基板裏面の洗浄を
行うので、基板Wの裏面(特に、吸着領域)の汚れが一
層精度良く除去されて後工程に搬出でき、後工程の露光
工程でのフォーカス異常という不都合を一層低減でき
る。
According to this procedure, the back surface of the substrate centering on the suction area of the substrate W is cleaned immediately before the substrate W is carried out, so that the back surface of the substrate W (particularly, the suction area) is more accurately cleaned. It is well removed and can be carried out to the subsequent process, and the inconvenience of focus abnormality in the exposure process of the subsequent process can be further reduced.

【0035】また、上記図4のフローチャートの手順と
逆の手順、すなわち、基板Wが処理室SR内に搬入され
ると、基板表面への処理液の塗布を行い、その後、基板
裏面の吸着領域の洗浄を行うような手順で装置を動作さ
せてもよい。このような手順で行えば、基板Wの搬出の
直前に基板Wの吸着領域を中心とした基板裏面の洗浄を
行うので、第1の基板回転手段(吸着台10)を介して
基板W間で汚れの転写が起きても、基板Wの裏面(特に
吸着領域)が汚れたままの状態で後工程に搬送されると
いうことはなく、結果的に第1の基板回転手段を介した
汚れの連鎖的拡散を防止することができる。
Further, the procedure opposite to the procedure of the flow chart of FIG. 4 is performed, that is, when the substrate W is loaded into the processing chamber SR, the processing liquid is applied to the front surface of the substrate, and then the adsorption area on the back surface of the substrate is applied. The device may be operated in a procedure such that the cleaning is performed. According to such a procedure, the back surface of the substrate centering on the suction region of the substrate W is cleaned immediately before the substrate W is unloaded, so that the substrate W is transferred between the substrates W via the first substrate rotating means (suction table 10). Even if the transfer of dirt occurs, the back surface of the substrate W (particularly the suction area) is not conveyed to the subsequent process in a state where the back surface is still dirty, and as a result, the chain of dirt through the first substrate rotating means. Diffusion can be prevented.

【0036】なお、上述の第1実施例では、第1の基板
回転手段(吸着台10等)が昇降して基板Wの受渡しと
行うように構成したが、第1の基板回転手段を昇降させ
ず、例えば、回転台1や回転軸3等を昇降させて第2の
基板回転手段側を昇降させるとともに、それに連動して
処理液洗浄ノズル17を昇降させて、基板Wの受渡しを
行うように構成してもよい。
In the first embodiment described above, the first substrate rotating means (suction table 10 or the like) moves up and down to deliver and receive the substrate W, but the first substrate rotating means moves up and down. Instead, for example, the rotary table 1, the rotary shaft 3 and the like are raised and lowered to raise and lower the second substrate rotating means side, and in conjunction with this, the processing liquid cleaning nozzle 17 is raised and lowered to transfer the substrate W. You may comprise.

【0037】次に、本発明の第2実施例装置の構成を図
6ないし図8を参照して説明する。図6は、第2実施例
装置の概略構成を示す一部省略側面図であり、図7は、
図6のB−B矢視図、図8は、第2の基板回転手段の構
成を示す図である。なお、上述した第1実施例と同様の
構成は、図1ないし図3と同一符号を示しその詳述は省
略する。
Next, the configuration of the second embodiment device of the present invention will be described with reference to FIGS. FIG. 6 is a partially omitted side view showing the schematic configuration of the second embodiment device, and FIG.
6 is a view taken along the line BB of FIG. 6, and FIG. 8 is a diagram showing the configuration of the second substrate rotating means. The same components as those in the first embodiment described above are designated by the same reference numerals as those in FIGS. 1 to 3 and their detailed description is omitted.

【0038】具体的構成を以下に説明する。まず、第1
の基板回転手段は、ロータリージョイント部11に鉛直
軸7の基端部が連結され、鉛直軸7の上端には吸着台1
0が一体に連結されて構成される。そして、上記第1実
施例と同様に真空吸引源14による真空吸引により、基
板Wの吸着支持を行うとともに、ベルト式伝動機構4、
モータ5により吸着支持した基板Wを回転中心P1周り
に水平回転させる。ただし、本実施例では、ロータリー
ジョイント部11は基台2に固定されており、第1実施
例のように昇降することはない。
A specific configuration will be described below. First, the first
In the substrate rotating means, the base end of the vertical shaft 7 is connected to the rotary joint 11, and the suction table 1 is attached to the upper end of the vertical shaft 7.
0 is integrally connected. Then, as in the first embodiment, the substrate W is sucked and supported by vacuum suction by the vacuum suction source 14, and the belt type transmission mechanism 4,
The substrate W sucked and supported by the motor 5 is horizontally rotated around the rotation center P1. However, in this embodiment, the rotary joint portion 11 is fixed to the base 2 and does not move up and down as in the first embodiment.

【0039】第1の基板回転手段の側方には、上記第一
実施例と類似の構成のバックリンス機構(洗浄液供給管
23、洗浄液供給源24等)が備えられているととも
に、上記第一実施例と同様の構成の処理液吐出用の機構
(処理液供給管21、処理液吐出ノズル22等)が備え
られている。なお、本実施例においては、バックリンス
機構の洗浄液供給管23は揺動する必要がないので、揺
動のためのモータ等は設けず、固定して取り付けられ
る。
On the side of the first substrate rotating means, a back rinse mechanism (cleaning liquid supply pipe 23, cleaning liquid supply source 24, etc.) having a construction similar to that of the first embodiment is provided and the first A mechanism for discharging the processing liquid (processing liquid supply pipe 21, processing liquid discharge nozzle 22 and the like) having the same configuration as that of the embodiment is provided. In this embodiment, since the cleaning liquid supply pipe 23 of the back rinse mechanism does not need to swing, a motor or the like for swinging is not provided and it is fixedly attached.

【0040】また、第1の基板回転手段の上方に第2の
基板回転手段が配置されている。この第2の基板回転手
段は、開閉自在の複数個(図では4個)の基板支持部材
31を下方に突出させた回転台32と、下端部が回転台
32に一体に連結され、上端部が支持アーム33の先端
部に回転自在に支持され、モータ34の回転により回転
台32を回転中心P1周りで水平回転させる支軸35
と、前記支持アーム33の基端部を昇降させるための直
列的に連結されたエアーシリンダ36、37とで構成さ
れている。
The second substrate rotating means is arranged above the first substrate rotating means. The second substrate rotating means includes a rotary base 32 having a plurality of openable / closable (four in the figure) substrate support members 31 protruding downward, a lower end portion integrally connected to the rotary base 32, and an upper end portion. Is rotatably supported by the tip of the support arm 33, and a spindle 35 that horizontally rotates the rotary table 32 around the rotation center P1 by the rotation of the motor 34.
And air cylinders 36 and 37 connected in series for raising and lowering the base end of the support arm 33.

【0041】各基板支持部材31は、基板裏面の端部を
載置するための水平部31aと基板Wの水平回転時の水
平方向への移動を規制するための鉛直部31bとを備え
ている。これら基板支持部材31は、開閉して基板Wの
支持の解除と基板Wの支持とを行う。この基板支持部材
31の開閉の機構を図8を参照して説明する。
Each substrate supporting member 31 is provided with a horizontal portion 31a for mounting the end portion of the back surface of the substrate and a vertical portion 31b for restricting the horizontal movement of the substrate W during horizontal rotation. . These substrate support members 31 open and close to release the support of the substrate W and support the substrate W. The mechanism for opening and closing the substrate support member 31 will be described with reference to FIG.

【0042】各基板支持部材31は回転台32の下方の
長孔40から突出され、回転台32内の揺動支点41を
中心として揺動されるとともに、その基端部は円板状部
材42に回動自在に取り付けられている。各円板状部材
42は載置台43に載置されている。載置台43はコイ
ルバネ44で上方に付勢され、各円板状部材42が上方
に付勢される結果、図8(a)に示すように、各基板支
持部材31は閉状態が維持される。各円板状部材42の
上方には、エアーシリンダ45のロッド45aの伸長に
より下方に押し下げられる押下部材46が配置されてい
る。この押下部材46が下方に変位すると、図8(b)
に示すように、各円板状部材42、載置台43が下方に
押し下げられ、各基板支持部材31は、揺動支点41を
中心として揺動される結果、開状態となる。また、エア
ーシリンダ45のロッド45aが収縮され押下部材46
が上方に変位されると、コイルバネ44の復元力で、載
置台43、各円板状部材42が上方に戻される結果、各
基板支持部材31が閉状態に戻される。なお、このと
き、長孔40内に設けられたストッパー47により、図
8(a)に示すように、閉状態の基板支持部材31の位
置が規制される。
Each substrate supporting member 31 is projected from the elongated hole 40 below the rotary table 32 and is rocked about a rocking fulcrum 41 in the rotary table 32, and its base end is a disc-shaped member 42. It is rotatably attached to. Each disk-shaped member 42 is mounted on the mounting table 43. The mounting table 43 is urged upward by the coil spring 44, and the disc-shaped members 42 are urged upward. As a result, as shown in FIG. 8A, the substrate support members 31 are maintained in the closed state. . A push-down member 46 that is pushed down by the extension of the rod 45a of the air cylinder 45 is arranged above each disc-shaped member 42. When the pressing member 46 is displaced downward, FIG.
As shown in FIG. 5, the disk-shaped members 42 and the mounting table 43 are pushed downward, and the substrate support members 31 are swung about the swing fulcrums 41, and as a result, they are brought into the open state. Further, the rod 45a of the air cylinder 45 is contracted so that the pushing member 46 is pressed.
Is displaced upward, the mounting table 43 and the disc-shaped members 42 are returned upward by the restoring force of the coil spring 44, and as a result, the substrate support members 31 are returned to the closed state. At this time, the position of the substrate support member 31 in the closed state is regulated by the stopper 47 provided in the elongated hole 40, as shown in FIG.

【0043】上述のように開閉により基板Wの支持とそ
の解除を行う各基板支持部材31を下方に突出させた回
転台32は、モータ34の回転により、支持アーム33
に対して回転中心P1周りで回転されるとともに、支持
アーム33の昇降に応じて、UP、MP、DPの高さの
間で昇降されるように構成されている。この昇降は、エ
アーシリンダ36、37の各ロッド36a、37aの伸
縮の組合わせで実現される。すなわち、両方のエアーシ
リンダ36、37のロッド36a、37aを伸長させる
ことにより回転台32はUPに位置され、一方のエアー
シンリンダ(図6では36)のロッドのみを伸長させる
ことにより回転台32はMPに位置され、両方のエアー
シリンダ36、37のロッド36a、37aを収縮させ
ることにより回転台32はDPに位置される。なお、U
Pは待機位置であり、MPは搬入されてくる基板Wを受
け取ったり、処理済基板Wを引き渡すとともに、基板裏
面の吸着領域の洗浄を行うための位置であり、DPは第
1の基板回転手段との間で基板Wの受渡しを行うための
位置である。
As described above, the rotary table 32, in which the respective substrate supporting members 31 for supporting and releasing the substrate W by opening and closing, are projected downward, the rotating arm 32 rotates the supporting arm 33.
On the other hand, it is configured to be rotated around the rotation center P1 and to be moved up and down between the heights of UP, MP, and DP in accordance with the elevation of the support arm 33. This raising and lowering is realized by a combination of expansion and contraction of the rods 36a and 37a of the air cylinders 36 and 37. That is, the rotary table 32 is positioned at UP by extending the rods 36a and 37a of both air cylinders 36 and 37, and the rotary table 32 is extended by extending only the rod of one of the air cylinders (36 in FIG. 6). Is located at MP, and the rotary base 32 is located at DP by contracting the rods 36a and 37a of both air cylinders 36 and 37. Note that U
P is a standby position, MP is a position for receiving the loaded substrate W, handing over the processed substrate W, and cleaning the suction area on the back surface of the substrate, and DP is the first substrate rotating means. It is a position for delivering the substrate W to and from.

【0044】また、第1の基板回転手段の側方には、基
板裏面の吸着領域を洗浄するための機構が備えられてい
る。この洗浄機構は、モータ51の回転により揺動支点
Y3を中心として揺動されるクランク状の洗浄液供給管
52と、洗浄液供給管52の基端部に連通接続された洗
浄液供給源53と、洗浄液供給管52の先端部に取り付
けられた洗浄液供給ノズル54と防水板55等で構成さ
れている。洗浄液供給管52の揺動動作により、MPに
位置した第2の基板回転手段に支持された基板裏面の回
転中心P1に向けて洗浄液を噴射する洗浄位置(図6、
図7の二点鎖線で示す状態)と、その側方の待機位置
(図6、図7の実線で示す状態)との間で、洗浄液供給
ノズル54が変位されるように構成され、MPに位置し
た第2の基板回転手段に基板Wが支持され、水平回転さ
れた状態で、洗浄液供給ノズル54が洗浄位置において
洗浄液を噴射することにより基板裏面の吸着領域が洗浄
される。なお、防水板55は、基板裏面の吸着領域の洗
浄処理中に、洗浄液が吸着台10上に滴下するのを防止
するために設けている。
A mechanism for cleaning the suction area on the back surface of the substrate is provided on the side of the first substrate rotating means. This cleaning mechanism includes a crank-shaped cleaning liquid supply pipe 52 that is swung about a swing fulcrum Y3 by the rotation of a motor 51, a cleaning liquid supply source 53 that is connected to the base end of the cleaning liquid supply pipe 52, and a cleaning liquid. It is composed of a cleaning liquid supply nozzle 54 attached to the tip of the supply pipe 52, a waterproof plate 55 and the like. By the swinging motion of the cleaning liquid supply pipe 52, the cleaning liquid is ejected toward the rotation center P1 of the back surface of the substrate supported by the second substrate rotating means located at MP (FIG. 6,
The cleaning liquid supply nozzle 54 is configured to be displaced between the standby position (the state indicated by the two-dot chain line in FIG. 7) and the standby position on the side thereof (the state indicated by the solid line in FIGS. 6 and 7). While the substrate W is supported by the positioned second substrate rotating means and is horizontally rotated, the cleaning liquid supply nozzle 54 sprays the cleaning liquid at the cleaning position to clean the adsorption area on the back surface of the substrate. The waterproof plate 55 is provided to prevent the cleaning liquid from dripping on the suction table 10 during the cleaning process of the suction area on the back surface of the substrate.

【0045】この第2実施例装置による処理液の塗布の
手順も上記第1実施例装置の場合と基本的には同じであ
るが、装置構成が異なっているので、装置の動作は第1
実施例とは異なる。これを、図9の動作説明図等を参照
して簡単に説明する。なお、図9では、図4のフローチ
ャートの手順に沿った動作を示しており、以下ではその
手順に沿った処理液の塗布について説明する。
The procedure of applying the treatment liquid by the apparatus of the second embodiment is basically the same as that of the apparatus of the first embodiment, but the operation of the apparatus is the first because the apparatus configuration is different.
Different from the embodiment. This will be briefly described with reference to the operation explanatory diagram of FIG. Note that FIG. 9 shows the operation according to the procedure of the flowchart of FIG. 4, and the application of the processing liquid according to the procedure will be described below.

【0046】この手順の場合の本実施例の初期状態は、
回転台32(第2の基板回転手段)はUPに待機し、各
基板支持部材31は閉状態であり、処理液供給ノズル2
2、洗浄液供給ノズル54はそれぞれの待機位置に待機
し、吸着台10の真空吸引は解除された状態である。
The initial state of this embodiment in the case of this procedure is
The turntable 32 (second substrate rotating means) stands by at the UP, each substrate support member 31 is in the closed state, and the processing liquid supply nozzle 2
2. The cleaning liquid supply nozzle 54 stands by at each standby position, and the vacuum suction of the suction table 10 is released.

【0047】まず、ステップS1では、図示しない搬送
機構が図6の実線で示す位置に基板を搬入すると、第2
の基板回転手段は、各基板支持部材31を開状態にして
回転台32をMPまで降下させ、その位置で各基板支持
部材31を閉状態にして、図9(a)に示すように、搬
入されてきた基板Wを受け取り支持する。
First, in step S1, when the transfer mechanism (not shown) carries in the substrate to the position shown by the solid line in FIG.
The substrate rotating means of FIG. 9 opens each substrate supporting member 31 and lowers the turntable 32 to MP, closes each substrate supporting member 31 at that position, and carries in the substrate as shown in FIG. 9A. The received substrate W is received and supported.

【0048】次に、ステップS2では、洗浄液供給ノズ
ル54を洗浄位置に位置させ、図9(b)に示すよう
に、回転台32を回転させながら、洗浄液供給ノズル5
4から洗浄液を噴射して、基板裏面の吸着領域の洗浄を
行う。なお、このとき防水板55が吸着台10の上方に
配置されるので、洗浄液が吸着台10の上に滴下するの
が防止される。また、その他の効果は、上記第1実施例
の場合と同じである。
Next, in step S2, the cleaning liquid supply nozzle 54 is positioned at the cleaning position, and as shown in FIG. 9B, the cleaning liquid supply nozzle 5 is rotated while rotating the turntable 32.
The cleaning liquid is sprayed from 4 to clean the adsorption area on the back surface of the substrate. At this time, since the waterproof plate 55 is arranged above the suction table 10, the cleaning liquid is prevented from dripping on the suction table 10. The other effects are the same as those of the first embodiment.

【0049】次に、ステップS3では、図9(c)に示
すように、洗浄液供給ノズル54からの洗浄液の噴射を
停止し、回転台32を高速回転させて基板Wの乾燥を行
う。
Next, in step S3, as shown in FIG. 9C, the injection of the cleaning liquid from the cleaning liquid supply nozzle 54 is stopped, and the rotary table 32 is rotated at a high speed to dry the substrate W.

【0050】次に、ステップS4では、洗浄液供給ノズ
ル54を待機位置に待機させ、図9(d)に示すよう
に、回転台32をDPまで降下させて基板Wを吸着台1
0に載置し、次に、各基板支持部材31を開状態にして
回転台32をMP(またはUP)まで上昇させることに
より、第2の基板回転手段から第1の基板回転手段への
基板Wの受け渡しを行い、吸着台10は真空吸引して載
置された基板Wを吸着支持する。
Next, in step S4, the cleaning liquid supply nozzle 54 is made to stand by at the standby position, and as shown in FIG. 9 (d), the rotary table 32 is lowered to DP to pick up the substrate W.
No. 0, and then each substrate support member 31 is opened to raise the turntable 32 to MP (or UP), so that the substrate from the second substrate rotating means to the first substrate rotating means is increased. The W is transferred, and the suction table 10 sucks the vacuum to support the mounted substrate W by suction.

【0051】次に、ステップS5では、処理液吐出ノズ
ル22を吐出位置に位置させ、図9(e)に示すよう
に、第1の基板回転手段を回転させながら、処理液吐出
ノズル22から基板Wの表面に所定量吐出された処理液
を遠心力により基板表面に均一に塗布する。
Next, in step S5, the processing liquid discharge nozzle 22 is positioned at the discharge position, and as shown in FIG. 9E, the substrate is discharged from the processing liquid discharge nozzle 22 while rotating the first substrate rotating means. A predetermined amount of the processing liquid discharged onto the surface of W is uniformly applied to the surface of the substrate by centrifugal force.

【0052】そして、ステップS6では、処理液吐出ノ
ズル22を待機位置に移動させ、吸着台10は基板Wの
吸着支持を解除し、第2の基板回転手段が基板支持部材
31を開状態にして、回転台32をDPまで降下して、
その位置で、基板支持部材31を閉状態にして基板Wを
受け取り、その後回転台32をMPまで上昇して待機
し、処理済基板Wを後工程に搬送する搬送機構が基板W
を受け取ると、第2の基板回転手段は基板支持部材31
を開状態にして回転台32をUPまで上昇させて処理済
基板を搬送機構に引き渡す。なお、その後、第2の基板
回転手段は基板支持部材31を閉状態にして初期状態に
戻し、次に搬入されてくる基板Wの処理に備える。ま
た、本実施例においても、上記第1実施例と同様に基板
Wのオリエンテーションフラット部の位置と、基板支持
部材31との位置を合わせるために、基板Wの回転位置
を光学式センサ等を用いて検出しつつ、第1、第2の基
板回転手段の回転停止位置が制御される。
Then, in step S6, the processing liquid discharge nozzle 22 is moved to the standby position, the suction table 10 releases the suction support of the substrate W, and the second substrate rotating means opens the substrate support member 31. , Descend the turntable 32 to DP,
At that position, the substrate supporting member 31 is closed to receive the substrate W, and then the rotary table 32 is raised to MP and stands by, and a transport mechanism that transports the processed substrate W to a subsequent process is provided.
The second substrate rotating means receives the substrate supporting member 31
Is opened and the rotary table 32 is raised to UP to transfer the processed substrate to the transfer mechanism. After that, the second substrate rotating means closes the substrate support member 31 to return it to the initial state, and prepares for processing of the substrate W which is loaded next. Also, in this embodiment, as in the first embodiment, in order to align the position of the orientation flat portion of the substrate W and the position of the substrate supporting member 31, the rotational position of the substrate W is used with an optical sensor or the like. The rotation stop positions of the first and second substrate rotating means are controlled while being detected.

【0053】なお、本実施例において、処理液が塗布さ
れた後、基板裏面の吸着領域の洗浄を再度行う場合、上
記ステップS6で、処理液が塗布された基板Wを支持し
て回転台32がMPに上昇された状態において、洗浄液
供給ノズル54を洗浄位置に位置させて、ステップS
2、S3(図9(b)、(c)参照)と同様の動作を繰
り返せばよい。
In this embodiment, when the adsorption area on the back surface of the substrate is washed again after the treatment liquid is applied, in step S6, the substrate W on which the treatment liquid is applied is supported to rotate the turntable 32. Is raised to MP, the cleaning liquid supply nozzle 54 is positioned at the cleaning position, and step S
The same operation as 2, S3 (see FIGS. 9B and 9C) may be repeated.

【0054】また、本実施例において、図4、図9の手
順と逆の手順(処理液の塗布の後、基板裏面の吸着領域
を洗浄する手順)で本装置における処理を実行する場合
には、搬入されてくる基板Wを第2の基板回転手段が受
け取り、その基板Wを第1の基板回転手段に引き渡した
後、図9(e)のように処理液の塗布を行い、その後、
第2の基板回転手段が第1の基板回転手段から処理液が
塗布された基板Wを受け取り、MPにおいて、図9
(b)、(c)と同様の処理を行う。
Further, in the present embodiment, when the processing in this apparatus is executed by the procedure opposite to the procedure of FIGS. 4 and 9 (the procedure of cleaning the adsorption area on the back surface of the substrate after the application of the treatment liquid). The second substrate rotating means receives the loaded substrate W, transfers the substrate W to the first substrate rotating means, and then the treatment liquid is applied as shown in FIG.
The second substrate rotating means receives the substrate W coated with the processing liquid from the first substrate rotating means, and in the MP, as shown in FIG.
The same processing as in (b) and (c) is performed.

【0055】このように、本第2実施例においても、第
1実施例と同様の効果を得ることができる。
As described above, also in the second embodiment, the same effect as that of the first embodiment can be obtained.

【0056】なお、上述の第2実施例では、第2の基板
回転手段(回転台32等)が昇降して基板Wの受渡しと
行うように構成したが、例えば、吸着台10や鉛直軸7
等を昇降させて第1の基板回転手段側を昇降させること
によって、基板Wの受渡しを行うように構成してもよ
い。
In the above-described second embodiment, the second substrate rotating means (rotating table 32, etc.) moves up and down to transfer the substrate W. However, for example, the suction table 10 and the vertical shaft 7 are provided.
Alternatively, the substrate W may be delivered by elevating the first substrate rotating means side and the like.

【0057】また、上述の第2実施例の構成では、第2
の基板回転手段を介して、搬入されてきた基板を搬送機
構から受け取ったり、処理済基板を搬送機構に引き渡す
ように構成しているが、図9(図4)の手順の場合であ
れば、処理済基板を第1の基板回転手段を介して搬送機
構に引き渡す(搬送機構が吸着台10に載置された基板
Wを受け取る)ように構成してもよいし、図9(図4)
の手順と逆の手順(処理液の塗布の後、基板裏面の吸着
領域を洗浄する手順)の場合であれば、搬入されてきた
基板を第1の基板回転手段を介して搬送機構から受け取
る(搬送機構が吸着第10に基板を載置する)ように構
成してもよい。さらに、基板裏面の吸着領域の洗浄の
後、処理液を塗布し、その後、基板裏面の吸着領域を洗
浄する手順の場合であれば、搬入されてきた基板を第1
の基板回転手段を介して搬送機構から受け取り、または
/および、処理済基板を第1の基板回転手段を介して搬
送機構に引き渡すように構成してもよい。
In the configuration of the second embodiment described above, the second
It is configured to receive the substrate that has been carried in from the transfer mechanism or to transfer the processed substrate to the transfer mechanism via the substrate rotating means of FIG. 9, but in the case of the procedure of FIG. 9 (FIG. 4), The processed substrate may be delivered to the transfer mechanism via the first substrate rotating means (the transfer mechanism receives the substrate W placed on the suction table 10), or FIG. 9 (FIG. 4).
In the case of the procedure reverse to the procedure (the procedure of cleaning the adsorption area on the back surface of the substrate after applying the processing liquid), the loaded substrate is received from the transport mechanism via the first substrate rotating means ( The transport mechanism may mount the substrate on the suction tenth). Further, in the case of a procedure of applying the treatment liquid after cleaning the suction area on the back surface of the substrate and then cleaning the suction area on the back surface of the substrate, the loaded substrate is first cleaned.
It may be configured to receive from the transport mechanism via the substrate rotating means, and / or deliver the processed substrate to the transport mechanism via the first substrate rotating means.

【0058】なお、上記第1、第2実施例やそれら変形
例は、本発明の一例を示すものであり、それら以外の構
造で第1、第2の基板回転手段や基板受渡し手段などを
構成することは可能であり、それら構成で本発明を実現
してもよい。
The first and second embodiments and their modifications are examples of the present invention, and other structures are used for the first and second substrate rotating means and the substrate transferring means. However, the present invention may be realized with these configurations.

【0059】また、上記第1、第2実施例やそれらの変
形例は、半導体ウエハを処理対象とした装置について説
明したが、本発明は、その他の基板を処理対象とする装
置にも同様に適用できる。例えば、基板が矩形基板の場
合であれば、第2の基板回転手段の基板支持は、図10
に示すように、矩形基板Wの角部付近を基板支持ピン6
(第1実施例の場合)や基板支持部材31(第2実施例
の場合)等で支持するように装置を構成すればよい。
Although the first and second embodiments and their modifications have been described with respect to the apparatus for processing the semiconductor wafer, the present invention is also applicable to the apparatus for processing other substrates. Applicable. For example, if the substrate is a rectangular substrate, the substrate support of the second substrate rotating means is as shown in FIG.
As shown in FIG.
The device may be configured to be supported by (in the case of the first embodiment) or the substrate support member 31 (in the case of the second embodiment).

【0060】[0060]

【発明の効果】以上の説明から明らかなように、本発明
によれば、処理液の塗布を行う装置(処理室)内におい
て基板の吸着領域の洗浄を行えるように構成したので、
基板の裏面の吸着領域が真空吸着される前に、その吸着
領域を洗浄液で洗浄することができ、基板裏面(特に吸
着領域)が汚れた基板が搬入れてきても、その汚れが、
以後に搬入されてくる基板に、基板の真空吸着動作を介
して連鎖的に拡散するのが防止できる。
As is apparent from the above description, according to the present invention, the adsorption area of the substrate can be cleaned in the apparatus (processing chamber) for applying the processing liquid.
Before the suction area on the back surface of the substrate is vacuum-sucked, the suction area can be washed with a cleaning liquid, and even if a substrate whose back surface (particularly the suction area) is dirty is carried in, the dirt is
It is possible to prevent the substrate from being subsequently carried in from being diffused in a chain through the vacuum suction operation of the substrate.

【0061】また、本発明によれば、処理液が塗布され
た後、その吸着領域を洗浄することもでき、このような
手順で処理を実施する場合においても、本装置からの基
板の搬出時に吸着領域が洗浄されるので、結果的に汚れ
の連鎖的拡散が防止できる。
Further, according to the present invention, after the treatment liquid is applied, the adsorption area can be washed, and even when the treatment is carried out by such a procedure, when the substrate is unloaded from the apparatus. As the adsorption area is cleaned, chain diffusion of dirt can be prevented as a result.

【0062】従って、処理液の塗布の前後いずれに吸着
領域を洗浄する場合においても、基板の汚れの拡散が防
止できる。
Therefore, even when the adsorption area is washed before or after the application of the treatment liquid, the diffusion of the dirt on the substrate can be prevented.

【0063】しかも、吸着領域の洗浄と処理液塗布が、
同一処理室内で行われるので、洗浄と処理液塗布との間
で、基板裏面が汚れることなく吸着領域の洗浄が無駄に
なることがない。さらに、吸着領域の洗浄を行う手段と
処理液塗布を行う手段を同一処理室内に備えたので、吸
着領域の洗浄と処理液の塗布とを別の装置で実施する場
合に比べて省スペース化が図れる。
Moreover, the cleaning of the adsorption area and the application of the treatment liquid are
Since the processing is performed in the same processing chamber, the back surface of the substrate is not contaminated between the cleaning and the application of the processing liquid, and the cleaning of the adsorption area is not wasted. Further, since the means for cleaning the adsorption area and the means for applying the processing liquid are provided in the same processing chamber, space saving can be achieved as compared with the case where the cleaning of the adsorption area and the application of the processing liquid are performed by different apparatuses. Can be achieved.

【0064】[0064]

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第1実施例に係る基板回転式処理液塗
布装置の概略構成を示す平面図である。
FIG. 1 is a plan view showing a schematic configuration of a substrate rotary processing liquid coating apparatus according to a first embodiment of the present invention.

【図2】第1実施例装置の縦断面図である。FIG. 2 is a vertical cross-sectional view of the first embodiment device.

【図3】図2のA−A矢視図である。FIG. 3 is a view as viewed in the direction of arrows AA in FIG. 2;

【図4】実施例装置の動作手順を示すフローチャートで
ある。
FIG. 4 is a flowchart showing an operation procedure of the embodiment apparatus.

【図5】第1実施例装置の動作を説明するための図であ
る。
FIG. 5 is a diagram for explaining the operation of the first embodiment device.

【図6】第2実施例装置の概略構成を示す一部省略側面
図である。
FIG. 6 is a partially omitted side view showing a schematic configuration of a second embodiment device.

【図7】図6のB−B矢視図である。FIG. 7 is a view taken along the line BB of FIG.

【図8】第2の基板回転手段の構成を示す図である。FIG. 8 is a diagram showing a configuration of a second substrate rotating means.

【図9】第2実施例装置の動作を説明するための図であ
る。
FIG. 9 is a diagram for explaining the operation of the second embodiment device.

【図10】矩形基板を対象とした装置の第2の基板回転
手段の構成を説明するための図である。
FIG. 10 is a diagram for explaining the configuration of a second substrate rotating unit of the device for a rectangular substrate.

【符号の説明】[Explanation of symbols]

1、32 … 回転台 3 … 回転軸 4 … ベルト式伝動機構 5、34 … モータ 6 … 基板支持ピン 7 … 鉛直軸 10 … 吸着台 20、54 … 洗浄液供給ノズル 22 … 処理液吐出ノズル 31 … 基板支持部材 W … 基板 1, 32 ... Rotating base 3 ... Rotating shaft 4 ... Belt type transmission mechanism 5, 34 ... Motor 6 ... Substrate support pin 7 ... Vertical shaft 10 ... Adsorption base 20, 54 ... Cleaning liquid supply nozzle 22 ... Treatment liquid discharge nozzle 31 ... Substrate Support member W ... Substrate

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 処理室に搬入された基板の裏面の回転中
心付近の吸着領域を真空吸着して前記基板を前記回転中
心周りで水平回転させながら、前記基板表面に吐出され
た処理液を前記基板表面に塗布する基板回転式処理液塗
布装置において、 前記基板裏面の吸着領域を真空吸着して、前記基板を前
記回転中心周りで水平回転させる第1の基板回転手段
と、 第1の基板回転手段に吸着支持された基板表面に処理液
を吐出させる処理液吐出ノズルと、 前記基板裏面の端部を支持して、前記基板を前記回転中
心周りで水平回転させる第2の基板回転手段と、 前記第2の基板回転手段に支持された基板の前記吸着領
域に洗浄液を供給する洗浄液供給ノズルと、 前記第1の基板回転手段と前記第2の基板回転手段との
間で基板を受け渡す基板受渡し手段と、 を前記処理室内に備えたことを特徴とする基板回転式処
理液塗布装置。
1. The processing liquid discharged onto the surface of the substrate is vacuum-sucked in a suction area near the center of rotation of the back surface of the substrate loaded into the processing chamber to horizontally rotate the substrate around the center of rotation. In a substrate rotation type processing liquid coating apparatus for coating a substrate front surface, a first substrate rotating means for vacuum-sucking an adsorption region on the back surface of the substrate to horizontally rotate the substrate around the rotation center; A processing liquid discharge nozzle for discharging a processing liquid onto the surface of the substrate suction-supported by the means; a second substrate rotating means for supporting the end portion of the back surface of the substrate and horizontally rotating the substrate around the rotation center; A cleaning liquid supply nozzle that supplies a cleaning liquid to the adsorption area of the substrate supported by the second substrate rotating means, and a substrate that transfers the substrate between the first substrate rotating means and the second substrate rotating means. Hander When, the substrate rotating treatment liquid application device, wherein a provided in the processing chamber.
JP17329694A 1994-06-30 1994-06-30 Substrate rotation-type treatment-liquid coating apparatus Pending JPH0817722A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17329694A JPH0817722A (en) 1994-06-30 1994-06-30 Substrate rotation-type treatment-liquid coating apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17329694A JPH0817722A (en) 1994-06-30 1994-06-30 Substrate rotation-type treatment-liquid coating apparatus

Publications (1)

Publication Number Publication Date
JPH0817722A true JPH0817722A (en) 1996-01-19

Family

ID=15957819

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17329694A Pending JPH0817722A (en) 1994-06-30 1994-06-30 Substrate rotation-type treatment-liquid coating apparatus

Country Status (1)

Country Link
JP (1) JPH0817722A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100558026B1 (en) * 1996-12-27 2006-05-09 동경 엘렉트론 주식회사 Treatment device and treatment method
WO2022150695A1 (en) * 2021-01-11 2022-07-14 Applied Materials, Inc. Using controlled gas pressure for backside wafer support

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100558026B1 (en) * 1996-12-27 2006-05-09 동경 엘렉트론 주식회사 Treatment device and treatment method
WO2022150695A1 (en) * 2021-01-11 2022-07-14 Applied Materials, Inc. Using controlled gas pressure for backside wafer support

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