JPH0817332A - Field emission electronic device and its manufacture - Google Patents

Abstract

PURPOSE:To reduce the radius of curvature of a cathode so as to decrease operating voltage by using as a cathode the line of intersection of a stepped level that is at an acute angle to the higher surface of the upper side of a semiconducting substrate and the higher surface, and providing over a lower surface a gate electrode that is insulated and located near the cathode. CONSTITUTION:A stepped level 3 that is at an acute angle theta to a higher surface 2 is formed on a semiconducting substrate 1 made of Si single crystals. The line 4 of intersection of the stepped level 3 and the higher surface 2 serves as a cathode. The lower end of the stepped level 3 intersects a lower surface 5. A gate electrode 7 is formed on the lower surface 5 and near the cathode 4 with an insulating film 6 between the lower surface 5 and the electrode 7. An electric field is applied between the cathode 4 and the electrode 7 to cause emission of electrons from the cathode 4.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION The present invention relates to an electron beam pumped laser,
The present invention relates to a cold electron source applied to a flat-type solid-state display device, an ultra-high speed micro vacuum device, and the like, and more particularly to a field emission type electronic device capable of realizing integration and low voltage, and a manufacturing method thereof.

[0002]

2. Description of the Related Art Advances in fine processing technology for semiconductors have made it possible to form minute field emission cathodes. Spindt et al. Have proposed a cone type (vertical type) field emission cathode, and attention has been paid to a minute field emission type electron source (Reference 1: C.
A. Spindt, J .; Appl. Phys, Vol.
47, p. 5248 (1976)). The structure and manufacturing method of the field emission cathode proposed by Spindt will be described as a first conventional example with reference to FIG.

First, as shown in (a), an insulating layer 101 is formed on a semiconductive substrate (silicon) 100, and the insulating layer 101 is formed.
A metal film 102 to be a gate electrode is formed on the above. A circular small hole 103 is formed in the metal film 102 and the insulating layer 101 by a normal photolithography process. Next, as shown in (b), a sacrificial layer 104 such as alumina is vapor-deposited on the semiconductive substrate 100 at a shallow angle. By this step, the gate diameter is reduced and the gate electrode is covered with the sacrificial layer 104. Next, as shown in (c), a metal 105 such as molybdenum serving as a cathode is vertically vapor-deposited on the semiconductive substrate 100. Since the gate opening becomes smaller with vapor deposition, a conical cathode 106 is formed inside the hole. Then, as shown in (d), the sacrificial layer 104 is etched and unnecessary metal is removed by a lift-off method to complete the process. The field emission cathode operates by drawing electrons into the vacuum from the tip of the cathode 106 by the gate electrode 102 and receiving the electrons by an anode electrode (not shown) installed facing the cathode 106.

Thereafter, Gray et al. Have proposed a method of forming a field emission cathode having a sharper tip shape with a similar vertical structure using anisotropic crystal plane orientation etching of silicon or thermal oxidation ( Reference 2: HF Gra
y et al. , IEDM Tech. Dig. p. 7
76, (1986), Reference 3: Betsui, Proceedings of the Annual Conference of the Institute of Electronics, Information and Communication Engineers of the Autumn 1990, SC-8-2.
(1990)).

As a second conventional example, there is a field emission cathode having a planar structure with respect to a vertical structure (reference document 4: Ito et al.,
Vacuum 34 volumes P. 867 (1991)). As for the structure, as shown in FIG. 13A, the metal on the quartz substrate 107 is etched in a comb shape to form a cathode 108, a gate electrode 109,
Since an anode (not shown) and the like can be formed on the same substrate, field emission cathodes of various structures are possible and the capacitance is small, so that it can be applied to an ultra-high speed device. In particular, the one using a silicon substrate instead of the quartz substrate is expected to have a new application because it can be integrated with an LSI or the like. The creation method will be described with reference to FIG.

First, as shown in (1), the quartz substrate 107 is used.
Tungsten (W) is formed as the metal 108 for the cathode on the above, and then, as shown in (2), the resist 109 is used as a mask to outline the shape of the cathode by RIE (reactive).
processing by ion etching). Next, as shown in (3), the quartz substrate 107 is etched with hydrofluoric acid. Next, as shown in (4), the metal to be the gate electrode is vacuum-deposited, and then the gate electrode 110 is processed by wet etching to remove the resist 109 on the cathode. Next, as shown in (5), the gate electrode 110 is processed by photolithography and wet etching using the resist 111 as a mask, and finally, as shown in (6) and (7), the comb-shaped cathode 112 is formed by photolithography of the resist 113. Then, it is formed by wet etching and completed.

[0007]

However, in the conventional cone type field emission cathode, the radius of curvature of the cathode tip is 20 nm, the distance between the cathode and the gate electrode is about 0.5 μm, and this processing is performed with good uniformity. In order to realize it, the electron beam exposure method had to be used. In addition, conventional photolithography can be used for conventional planar field emission cathodes, and the distance between the cathode and the gate electrode can be easily controlled by submicron depending on the film thickness, resulting in high reproducibility and uniformity of the device structure. There is a feature called. However, in this method, the radius of curvature of the cathode tip is about 4
It was 0 nm, and the operating voltage was relatively high at 150V.

The present invention solves the above problems, and an object thereof is to provide a field emission type electronic device having a small radius of curvature of the cathode and a low operating voltage, and a method for manufacturing the same.

[0009]

In order to achieve the above-mentioned object, a field emission type electronic device of the present invention is provided with a high surface and a low surface on one surface, and a high surface and a low surface are formed between the high surface and the low surface. Of the conductive substrate or the semiconductive substrate in which the step of is formed at an acute angle with the high surface and the intersection of the high surface and the step becomes the cathode, and the lower surface of the conductive substrate or the semiconductive substrate. And a gate electrode which is insulated from the cathode and is formed in the vicinity of the cathode, and an electron is emitted from the cathode by applying an electric field between the gate electrode and the cathode.

[0010]

According to the present invention, the radius of curvature of the cathode and the distance between the cathode and the gate electrode can be precisely controlled by the above structure.

[0011]

Embodiments of the present invention will be described below with reference to the drawings.

(Embodiment 1) An embodiment of the present invention will be described with reference to FIGS.

In FIG. 1, reference numeral 1 denotes a semiconductive substrate made of silicon single crystal, on which a step 3 which intersects a high surface 2 at an acute angle θ is formed. The intersection line 4 between the step 3 and the upper surface 2 acts as a cathode. The radius of curvature of the cathode 4 is about 10 nm. The lower end of the step 3 intersects the lower surface 5. A gate electrode 7 is formed on the lower surface 5 in close proximity to the cathode 4 with an insulating film 6 interposed therebetween.
The distance between the gate electrode 7 and the upper surface 2 is 100 nm, the width of the device is 1 mm, and 50 V is applied between the cathode 4 and the gate electrode 7.
When an electric field of 1 was applied, 10 μA of electrons were emitted from the linear cathode 4.

Next, the manufacturing method will be described with reference to FIG. First, as shown in (a), a silicon single crystal substrate 1
A silicon oxide film 8 is formed thereon. Next, as shown in (b), an etching protection mask 9 having a linear boundary portion is formed on the silicon single crystal substrate 1 by photolithography. Next, as shown in (c), dry etching is performed from a direction inclined with respect to the vertical direction of the surface of the silicon single crystal substrate 1 to form a step 3 that forms an acute angle with the upper surface along the boundary of the etching protection mask 9. To do. The cathode 4 is a straight line intersecting with the surface of the high portion and the step makes an acute angle.
Next, as shown in (d), the insulating layer 10 and the gate electrodes 7, 7 ′ are arranged in a direction perpendicular to the surface of the silicon single crystal substrate 1.
Is vapor-deposited on the entire surface. At this time, the etching protection mask 9 functions as a vapor deposition mask, and a gate electrode is formed on the lower surface in the vicinity of the cathode without adjustment. At this time, the distance between the cathode and the gate electrode is adjusted by the thickness of the insulating film. Next, as shown in (e), the etching protection mask 9, the insulating film 10, and the gate electrode 7'on the upper surface are removed by lift-off using a hydrofluoric acid-based aqueous solution.

When a voltage is applied between the gate electrode 7 and the upper surface 2, electrons are emitted from the cathode 4 in a direction perpendicular to the step 3 in a direction substantially parallel to the surface of the silicon single crystal substrate 1 due to the electric field effect.

In the above embodiment, dry etching was carried out to form a step having an acute angle with the surface of the high portion. However, the etching was carried out under the condition that side etching was caused by wet etching at the boundary of the etching protection mask. Also, the gate electrode is formed without adjustment. Also, instead of dry etching from the oblique direction, wet anisotropic etching can be used to form a cathode with a sharp tip. In this case, since the tip of the cathode is determined by the orientation of the crystal plane, a field emission type electronic device having excellent characteristics can be manufactured with good reproducibility. The manufacturing method will be described with reference to FIG.

First, as shown in (a), a silicon oxide film 8 is formed on the (100) plane of the silicon single crystal substrate 1. Next, as shown in (b), an etching protection mask 9 having a boundary along the <011> direction of the surface of the silicon single crystal substrate 1 is formed by photolithography. Next, as shown in (c), dry etching is performed on the surface of the silicon single crystal substrate 1 in the vertical direction to form a step 11 perpendicular to the boundary of the etching protection mask 9. Next, as shown in (d), a V-shaped step 12 is formed on the side surface of the step portion by performing wet anisotropic etching with a potassium hydroxide aqueous solution on the side surface and the lower surface of the step portion. At this time, at the boundary portion of the etching mask, the step is etched inward, so that the cathode 13 having an acute cross section is formed here. Next, as shown in (e), the insulating film 10 and the gate electrodes 14 and 14 'are deposited on almost the entire surface of the silicon single crystal substrate 1. At this time, the etching protection mask 9 functions as a vapor deposition mask, and the gate electrode 14 is formed on the lower surface in the vicinity of the cathode 13 without adjustment.

Finally, as shown in (f), the etching protection mask 9 is lifted off to remove the etching protection mask 9 on the upper surface, the insulating film 10 and the gate electrode 1.
When 4'is removed, the cathode 13 is exposed.

According to this manufacturing method, although the surface of the gate electrode is not flat near the cathode, a flat gate electrode can be manufactured. The manufacturing method will be described with reference to FIG.

First, as shown in (a), a silicon oxide film 8 is formed on the surface of the silicon single crystal substrate 1. Next, as shown in (b), an etching protection mask 9 having a boundary along the <011> direction of the silicon single crystal substrate 1 is formed by photolithography. Next, as shown in (c), dry etching is performed from a direction inclined from the direction perpendicular to the surface of the silicon single crystal substrate 1 to form a step 15 at the boundary of the etching protection mask 9 that forms an acute angle with the surface.
To form. Next, as shown in (d), the V-shaped step is formed by exposing the (111) plane to the side surface of the step by performing wet anisotropic etching on the side surface and the lower surface of the step with an aqueous solution of potassium hydroxide. 16 is formed. At this time, a step 16 is formed at the boundary of the etching protection mask 9.
Is etched inside, so that the cathode 17 having an acute cross section is formed here. Next, as shown in (e), the insulating film 10 and the gate electrodes 18 and 18 'are deposited on almost the entire surface of the silicon single crystal substrate 1. At this time, the etching protection mask 9 functions as a vapor deposition mask, and the gate electrode 18 is formed on the lower surface in the vicinity of the cathode 17 without adjustment. Finally, as shown in (f), the etching protection mask 9 is lifted off to remove the etching protection mask 9, the insulating film 10, and the gate electrode 1 on the upper surface.
8'is removed and the cathode 17 is exposed.

(Embodiment 2) In Embodiment 1, the field emission type electronic device having the linear cathode and the manufacturing method thereof have been described. In this embodiment, the cathode and the gate electrode are zigzag field emission type. The electronic element will be described with reference to FIG.

In FIG. 5, 1 is (1) of a silicon single crystal.
00) substrate, and a zigzag-shaped upper surface 2 is formed on the surface thereof in the <011> direction. A zigzag gate electrode 2 is formed on the lower surface 5 with an insulating film 6 interposed therebetween.
Zeros are formed in combination with the zigzag cathode 19 in the width direction at regular intervals, and since the radius of curvature of the corners of each zigzag is small, electrons are easily emitted from there. Therefore, the field emission type electronic device of this embodiment operates at a lower voltage than that of the first embodiment. As the manufacturing method, the method described in the first embodiment can be applied.

(Embodiment 3) In Embodiments 1 and 2, the field emission type electronic device in which the cathode and the gate electrode face each other has been described. The cathode is surrounded by the gate electrode with reference to FIGS. 6 and 7. The field emission type electronic device will be described.

In FIG. 6, a plurality of rectangular upper surfaces 21 are provided on the silicon single crystal substrate 1, and a gate electrode 24 is formed on the lower surfaces 22 around the upper surfaces via an insulating film 23. Has been done. When a voltage is applied between the upper surface 21 and the gate electrode 24, the cathode 25 emits electrons. Figure 7
Is a substantially circular upper surface 26 on the silicon single crystal substrate 1.
A plurality of gate electrodes 27 are formed, and a gate electrode 27 is formed on the lower surface 22 around the upper surface with an insulating film 23 interposed. When a voltage is applied between the upper surface 26 and the gate electrode 27, electrons are emitted from the cathode 28. According to the present embodiment,
A field emission type electronic device having one or more cathodes on the same substrate can be obtained. The field emission electronic device of FIGS. 6 and 7 can be manufactured by the method described in the first embodiment.

(Embodiment 4) A fourth embodiment of the present invention will be described with reference to FIGS.

FIG. 8 is a perspective view of a field emission type electronic device having a high density of a triangular pyramidal cathode 30 having a sharp tip. In the figure, 1 is a silicon single crystal substrate having a step 29, and 30 is a cathode having a triangular pyramid tip formed in the <011> direction on the (100) plane of the silicon single crystal substrate 1. The shape of the cathode 30 is a steep triangular pyramid shape protruding from the upper surface 31 toward the lower surface 32 because it is formed by wet anisotropic etching. The gate electrode 33 is formed on the lower surface 32 near the cathode 30 with an insulating film 34 interposed. 35 is the cathode 30
It is a terminal provided to supply power to the. By applying a voltage between the gate electrode 33 and the cathode 30, electrons are radiated from the triangular pyramidal cathode 30 in a direction perpendicular to the step 29 and in a direction substantially parallel to the surface of the silicon single crystal substrate 1 due to the electric field effect. Details of the field emission electronic device according to the present embodiment will be described with reference to FIG.

(A) shows a silicon single crystal substrate and an etching protection mask before wet anisotropic etching for forming a steep triangular pyramid-shaped cathode 30.
1 is a silicon single crystal substrate, on which a step having a boundary in the <011> direction is formed on the (100) plane,
It is separated into a high surface 31 and a low surface 32. A linear etching protection mask 36 having a substantially constant width in the <011> direction perpendicular to the step and having an end at the step is formed on the surface of the high portion. (B) shows the surface of the silicon single crystal substrate after wet anisotropic etching was performed with an aqueous solution of potassium hydroxide and the etching protection mask was removed. A triangular pyramidal cathode 30 surrounded by the (111) plane is formed at the tip. (C) shows the structure of (a) before anisotropic etching (dotted line),
And the cross section after anisotropic etching (solid line) is shown. However, (c-1) and (c-2) show cross sections in the line direction along the broken line AB in (b) and in the direction perpendicular thereto. As shown in (c-2), a linear convex portion having a triangular cross section with the (111) plane as a side surface is formed below the linear mask 36. Further, as shown in (c-1), the (111) plane appears toward the inside of the etching protection mask at the terminal end where the step is formed, and the silicon single crystal substrate 1
A surface having an acute angle (an acute angle in the lateral direction) with respect to the surface is formed.
As a result, a sharp tip is formed at the end of the cathode 30, and a cathode 30 having a precise structure protruding from the upper surface to the lower surface is formed. Furthermore, the gate electrode can be accurately formed on the lower surface by self-alignment using the thus-projected cathode 30 as a mask.

In this embodiment, the step is shown as being formed substantially perpendicular to the substrate surface, but dry etching is performed from the direction inclined to the silicon single crystal substrate to form the step. If it is formed at an acute angle with respect to the mask, it is possible to form a flat lower surface just below the tip. By forming the inclined step structure in this way, it is possible to further improve the accuracy of the gate electrode. A sectional view taken along the line in this case is shown in FIG. A dotted line shows a sectional view before anisotropic etching, and a solid line shows a sectional view after anisotropic etching. Reference numeral 37 denotes an inclined step formed by inclined dry etching.

According to the present embodiment, a field emission type electronic device operating at a lower voltage than that of the second embodiment can be obtained because the cathode 30 has a steep triangular pyramid shape.

Next, the manufacturing method will be described with reference to FIG. In the figure, the left is a top view of the silicon single crystal substrate, the center is a cross-sectional view in one direction of the substrate, and the right is a cross-sectional view in the other direction of the substrate.

First, as shown in (a), a silicon oxide film is formed on the surface of the silicon single crystal substrate 1, and <011> of the surface of the silicon single crystal substrate 1 is formed by photolithography.
Etching protection mask 36 having boundaries along the direction
To form. Next, as shown in (b), dry etching is performed from a direction inclined with respect to the vertical direction of the surface of the silicon single crystal substrate 1 to form a step 38 at the boundary of the etching protection mask 36 that forms an acute angle with the surface. Next, as shown in (c), the silicon oxide film is processed again by photolithography to form an etching protection mask 39 including a linear region having a constant width in the <011> direction perpendicular to the step. Next, as shown in (d), a V-shaped step is formed by anisotropically etching the wet with an aqueous potassium hydroxide solution. As a result, the cathode is formed inside the step by etching and thus has a sharp triangular pyramid shape. Next, as shown in (e), the insulating film 39 and the gate electrode 33 are vapor-deposited on almost the entire surface. At this time, the etching protection mask acts as a vapor deposition mask, and the gate electrode 33 is formed on the lower surface in the vicinity of the cathode 30 without adjustment. Finally, as shown in (f), the etching protection mask 36 and the like of the cathode 30 are removed by lift-off to complete the process.

(Embodiment 5) A fifth embodiment of the present invention is shown in FIG.
1 will be described.

The difference between this embodiment and Embodiment 1 is that an anode electrode 40 insulated from the lower surface 5 is provided on the side opposite to the side close to the upper surface 2 of the gate electrode 7.

According to this structure, the cathode 4, the gate electrode 7, and the anode electrode 40 have a planar structure.

Although the silicon single crystal substrate has been described in the embodiments, in the field emission type electronic element formed by dry etching, the silicon single crystal substrate is used instead of the silicon single crystal substrate.
The same effect can be obtained by using a conductive substrate such as molybdenum or tungsten. Further, the same effect can be obtained by using a gallium arsenide substrate as the semiconductive substrate.
Furthermore, if an N-type silicon substrate is used as the semiconductive substrate, the cathode is made P-type in advance by ion implantation or diffusion, and a PN junction is formed under the cathode, the breakdown voltage between the gate electrode and the cathode can be increased. it can. Further, if the oxide film on the cathode surface is removed by performing thermal oxidation after performing anisotropic etching, a sharper cathode is formed. Furthermore, if a control electrode is installed in another area on the substrate, a functional element can be formed. Further, when an impurity-doped region is formed on the substrate, it can be integrated with another integrated circuit or the like.

[0036]

As described above, according to the field emission type electronic device of the present invention, the following effects can be obtained.

(1) The radius of curvature of the cathode is smaller than before,
Since the distance between the cathode and the gate electrode can be controlled to about submicron, the operating voltage becomes low.

(2) Since the cathode and the gate electrode are formed by etching and photolithography, it is possible to obtain a field emission type electronic device having a cathode with a sharp tip and a high distance from the gate electrode.

(3) Since the cathode and the gate electrode are formed on the same substrate, various types of field emission type electronic devices can be obtained.

[Brief description of drawings]

FIG. 1 is a perspective view of a field emission type electronic device according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view for explaining the method for manufacturing the field emission electronic device according to the first embodiment.

FIG. 3 is a cross-sectional view for explaining another method for manufacturing the field emission electronic device according to the first embodiment.

FIG. 4 is a cross-sectional view for explaining another method of manufacturing the field emission type electronic device of the first embodiment.

FIG. 5 is a perspective view of a field emission type electronic device according to a second embodiment of the present invention.

FIG. 6 is a perspective view of a field emission type electronic device according to a third embodiment of the present invention.

FIG. 7 is a perspective view of another field emission type electronic device according to the third embodiment of the present invention.

FIG. 8 is a perspective view of a field emission type electronic device according to a fourth embodiment of the present invention.

FIG. 9 is a top view and a cross-sectional view for explaining details of a fourth embodiment of the present invention.

FIG. 10 is a top view and a sectional view for explaining a method for manufacturing a field emission type electronic device according to a fourth embodiment of the present invention.

FIG. 11 is a perspective view of a field emission type electronic device according to a fifth embodiment of the present invention.

FIG. 12 is a cross-sectional view for explaining a method for manufacturing a conventional cone-type (vertical type) field emission electronic device.

FIG. 13 is a perspective view of a conventional planar (horizontal) field emission electronic device and a cross-sectional view for explaining a manufacturing method.

[Explanation of symbols]

 1 Semiconductive Substrate 2, 21, 26, 31 High Surface 3, 12, 16, 29 Step 4, 13, 17, 19, 25, 28, 30 Cathode 5, 22, 32 Low Surface 7, 14, 18 , 20, 24, 27, 33 Gate electrode 40 Anode electrode

Claims (15)

[Claims] 1. A high surface and a low surface are formed on one surface, a step between the high surface and the low surface is formed at an acute angle with the high surface, and a line of intersection between the high surface and the step is formed. A conductive substrate or a semiconducting substrate to be a cathode, and a gate electrode insulated from the lower surface of the conductive substrate or the semiconducting substrate and formed in the vicinity of the cathode, wherein the gate A field emission type electronic device in which electrons are emitted from the cathode by applying an electric field between an electrode and the cathode. 2. A high surface and a low surface are formed on one surface, a step between the high surface and the low surface is formed at an acute angle with the high surface, and a line of intersection between the high surface and the step is formed. A conductive substrate or a semiconductive substrate to be a cathode, a gate electrode insulated from the lower surface of the conductive substrate or the semiconductive substrate and formed in the vicinity of the cathode, and the gate electrode An anode electrode is formed on the side opposite to the side close to the cathode so as to be insulated from the lower surface, and by applying an electric field between the cathode and the gate electrode, the direction from the cathode to the anode electrode is increased. Field-emission electronic device that emits electrons to the inside. 3. A high surface and a low surface are formed on one surface, a step between the high surface and the low surface is formed at an acute angle with the high surface, and a line of intersection between the high surface and the step is formed. A conductive substrate or a semiconductive substrate to be a cathode, and a gate electrode formed so as to be insulated from the lower surface of the conductive substrate or the semiconductive substrate and surround the cathode, A field emission type electronic device in which electrons are emitted from the cathode by applying an electric field between a gate electrode and the cathode. 4. A high surface and a low surface are formed on one surface, and a V-shaped step formed between the high surface and the low surface is formed at an acute angle with the high surface and the high surface. And a V-shaped step intersects with the semiconductive substrate serving as a cathode, and a gate electrode insulated from the lower surface of the semiconductive substrate and formed adjacent to the cathode. A field emission type electronic device in which electrons are emitted from the cathode by applying an electric field between the gate electrode and the cathode. 5. A triangular pyramid-shaped cathode formed at an acute angle with the high surface at a step formed between the high surface and the low surface on one surface and between the high surface and the low surface. A semiconductive substrate and a gate electrode that is insulated from the lower surface of the semiconductive substrate and is formed close to the cathode, and applies an electric field between the gate electrode and the cathode. A field emission type electronic device that emits electrons from the cathode by doing so. 6. The radius of curvature of the cathode is less than 20 nm and the distance between the cathode and the gate electrode is less than 1 micron.
The field emission type electronic device of 2, 3, 4 or 5. 7. The field emission type electronic device according to claim 1 or 2, wherein the cathode and the gate electrode linearly face each other at a constant interval in the width direction. 8. The field emission type electronic device according to claim 1, wherein the cathode and the gate electrode are zigzag-shaped in the width direction at regular intervals. 9. The field emission type electronic device according to claim 3, wherein the upper surface is polygonal or substantially circular. 10. The field emission type electronic device according to claim 1, 2 or 3, wherein the conductive substrate is molybdenum or tungsten. 11. The field emission type electronic device according to claim 1, wherein the semiconductive substrate is silicon or gallium arsenide. 12. The semiconductive substrate has a high surface and a low surface of (1
The field emission electronic element according to claim 1, 2, 3, 4, or 5, wherein the (00) plane and the step are (111) planes or (331) planes. 13. An etching protection mask is formed on a conductive substrate or a semiconducting substrate, a boundary is formed on the etching protection mask by photolithography, and then an oblique direction is formed along the boundary. Etching is performed to form a cathode with an acute angle between the surface of the high portion and the step, and then an insulating film and its insulating film are formed on the conductive substrate or the semiconductive substrate through the etching protection mask. 3. A gate electrode is formed on the gate electrode, and then the etching protection mask and the insulating film and the gate electrode formed on the etching protection mask are removed by lift-off.
Alternatively, the method for manufacturing a field emission type electronic device according to the item 3. 14. An etching protection mask is formed on a semiconductive substrate, a boundary is formed on the etching protection mask by photolithography, and then dry etching is performed along the boundary from a vertical or oblique direction. To form a high surface and a low surface through the step, and then perform anisotropic wet etching to form a V-shaped step having an acute angle with the high surface, An insulating film and a gate electrode are formed on the insulating film on the surface of the semiconductive substrate through the etching protection mask, and then an etching protection mask on the upper surface and its etching protection mask are formed by lift-off. The method for manufacturing a field emission type electronic device according to claim 4, wherein the insulating film and the gate electrode formed above are removed. 15. An etching protection mask is formed on a semiconductive substrate, and then a boundary portion and a linear portion are formed on the etching protection mask by photolithography, and then a vertical or oblique line is formed along the boundary portion. Dry etching from the direction to form the upper surface and the lower surface through the steps, then wet anisotropic etching to form the triangular pyramid-shaped cathode, and then through the etching protection mask. An insulating film on the surface of the semiconductive substrate, and a gate electrode on the insulating film, and then an etching protection mask on the upper surface by lift-off and an insulating film formed on the etching protection mask. The method for manufacturing a field emission electronic device according to claim 5, wherein the gate electrode is removed.