JPH08165331A - Resin-sealed semiconductor device - Google Patents

Abstract

PURPOSE: To obtain a high-reliability resin-sealed semiconductor device by coating or molding a semiconductor device with or in an epoxy resin composition prepared by melt-kneading an epoxy resin represented by a specific formula, a curing agent, a cure accelerator and a filter. CONSTITUTION: 100 pts.wt. biphenyl epoxy resin of formula I (wherein R is H or methyl; and N2 is 0-2) is mixed with 0.5-1.5 equivalents of a curing agent containing a phenol/alkyl ether polycondensate of formula II (wherein m is 1-10), 500-1mmol of a cure accelerator comprising an organophosphorus compound of formula III (wherein X is a quaternary ammonium ion; R is 1-4 C alkyl or alkoxy; and N1 is 1-2) and 50-90vol.%, based on the resin composition, inorganic filler of a particle diameter distribution of 0.1-100μm, the obtained mixture is melt-kneaded, and the obtained solid is ground to obtain an epoxy resin composition sealing material. A silicone chip with aluminum wirings is mounted on a lead frame, subjected to wire bonding, and transfer-molded with this sealing agent to obtain a resin-sealed semiconductor device.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-encapsulated semiconductor device which is encapsulated with an epoxy resin composition and is particularly excellent in moldability and solder reflow resistance.

[0002]

2. Description of the Related Art A resin encapsulation method, which is excellent in mass productivity, is widely used for packages of semiconductor elements such as transistors, ICs and LSIs. An epoxy resin composition in which a phenol novolac resin is used as a curing agent in an O-cresol novolac type epoxy resin having excellent moldability, hygroscopicity, heat resistance and the like as a sealing material, and a filler and various additives are added to the epoxy resin composition It is used.

By the way, due to the needs for miniaturization, weight reduction, and high performance of various electronic equipment, there is a strong demand for high-density mounting of semiconductor devices used therein, and recently, surface-mounted semiconductor devices suitable for high-density mounting. Is becoming mainstream. Moreover, packages are becoming smaller and thinner year after year. Along with that, the thickness of the sealing resin layer is significantly reduced. Especially TSOP (Thin Small Outline Package),
TQFJ (Thin QuadOutline J-lead Package), TQF
Among semiconductor devices such as P (Thin Quad Flat Package), the demand for a thin surface mount type package having a thickness of around 1 mm is increasing.

Furthermore, development of an ultra-thin surface mount type package having a thickness of 0.5 mm or less is under way.

In the production of the above-mentioned semiconductor package, the rationalization of the production process has been promoted for the purpose of improving the productivity and reducing the production cost. For example, in order to shorten the molding time, it is necessary to take out the molded product without damaging it. Therefore, the hardness of the molded product and the mold releasability are required. To improve the hardness and releasability, it is important to improve the curability of the molding material. Further, since the flow characteristics of the sealing material change with time during storage, it is stored at a low temperature for the purpose of preventing it, but even then it is not possible to suppress the change and it is impossible to store for a long time. Conventionally, the unused molding material was taken out of the molding machine after the completion of molding and was stored again at low temperature. However, recently, due to the simplification of the production process, there is a case where the molding material is left as it is in the molding machine or in the vicinity thereof without being collected even after the molding is completed. As a result, the change over time in the material properties is increasing, and the reliability of the molded product decreases, which is a major problem for molding manufacturers. That is, it is important to improve the storage stability of the sealing material. That is, as a sealing material, it is necessary to improve storage stability to simplify storage and to improve continuous moldability such as curability and mold releasability.

On the other hand, as the sealing resin layer becomes thinner, water easily enters the package, and the mechanical strength of the resin layer becomes smaller, so that the package is damaged by a small force. Like Further, the surface mount type semiconductor is soldered (mounted) to a printed circuit board by infrared ray or vapor reflow method, and at that time, the package is exposed to a high temperature of 200 ° C. or higher. Therefore, when the package absorbs moisture, the absorbed moisture rapidly evaporates, and the vapor pressure swells the package, causing peeling at the interface between the chip and the sealing resin or cracking in the package. As a result, in the semiconductor device, the element characteristics change, and the aluminum wiring on the element surface easily corrodes,
Various reliability after mounting is reduced. Therefore, improvement in solder reflow resistance (crack resistance of the package at the time of solder reflow) is strongly desired for the thin surface-mounting resin-sealed semiconductor device.

There are the following two paths for the moisture to enter the package. One is diffusion and permeation from the resin sealing layer, and the other is penetration from the interface between the lead frame and the sealing material. In order to improve the solder reflow resistance required for the package of the surface mount type semiconductor device, it is extremely important to reduce such infiltration moisture.

In order to solve the above-mentioned problems, various measures have been studied so far, and it has been particularly effective to reduce the moisture absorption and the adhesion of the sealing material. For example, as proposed in JP-A-3-207714 or JP-A-4-48759, a package is composed of an epoxy resin composition comprising an epoxy resin having a biphenyl skeleton and a phenol aralkyl resin curing agent, or , JP-A-4-50223, JP-A-4-50223
As proposed in 199856 or Japanese Unexamined Patent Publication No. 4-199857, it is possible to significantly improve the solder reflow resistance by configuring the package with a low hygroscopic epoxy resin composition having a naphthalene skeleton. Became.

[0009]

However, although the above-mentioned prior art is considerably effective in improving the solder reflow resistance, the encapsulating material itself is inferior in storage stability even at a relatively low temperature near room temperature. Moreover, there is a drawback that voids are likely to occur inside the molded product during molding, and it has been difficult to obtain a molded product with stable quality. Further, if the sealed product is left at a high temperature, the joint between the aluminum electrode on the surface of the semiconductor element and the gold wire that electrically connects the lead frame is likely to be corroded in a short time, resulting in a problem that the connection reliability is significantly deteriorated. there were.

In view of these circumstances, the object of the present invention is that the storage stability is excellent, there are no internal defects such as voids, and the solder reflow resistance and the connection reliability between the electrode and the gold wire are excellent. To stably provide a resin-encapsulated semiconductor device encapsulated with an epoxy resin composition.

[0011]

[Means for Solving the Problems] The inventors of the present invention include various additives such as a filler, a coupling agent, and a release agent, as well as a curing accelerator that is considered to affect the above-mentioned properties, kneading conditions for each material, Extensive studies were conducted on molding conditions and the like. As a result, they have found that the above problems can be improved by using a specific curing accelerator, and have reached the present invention. The gist of the present invention is as follows. General formula (1)

[0012]

[Chemical 4]

(Wherein X is a quaternary phosphonium ion,
R is a C1-4 alkyl group or alkoxy group, n ₁ is 1
Indicates an integer of ˜2. ) A resin-encapsulated semiconductor device, which is encapsulated with an epoxy resin composition containing an organophosphorus compound represented by

The curing accelerator represented by the general formula (1) is a quaternary phosphonium tetra-substituted phenyl borate. Specifically, tetraphenylphosphonium tetra (methylphenyl) borate, tetraphenylphosphonium tetra (ethylphenyl) borate, tetraphenylphosphonium tetra (propylphenyl) borate, tetraphenylphosphonium tetra (butylphenyl) borate, tetraphenyl Phosphonium tetra (methoxyphenyl) borate, tetraphenylphosphonium tetra (ethoxyphenyl) borate, tetraphenylphosphonium tetra (propoxyphenyl) borate, tetraphenylphosphonium tetra (butoxyphenyl) borate, tetraphenylphosphonium tetra (2,2 4-dimethylphenyl) borate, tetraphenylphosphonium tetra (3,5-dimethoxyphenyl) borate, Scan (4-methylphenyl) phenyl phosphonium tetra (methylphenyl) borate, Buchirutorisu (3-methylphenyl) phosphonium tetra (methylphenyl) is borate. Two or more kinds of these curing accelerators can be used in combination, if necessary. Further, it may be used in combination with a known curing accelerator, if necessary. The above curing accelerator can be used in exactly the same manner as a usual curing accelerator. Moreover, if necessary, it can be used after being heated and melted with the curing agent at 100 ° C. or higher in advance. The curing accelerator is added in an amount of 500 to 1 mmol, preferably 200 to 5 mmol, per 100 parts by weight of the epoxy resin.

The epoxy resin used in the present invention is not particularly limited, and known epoxy resins can be widely used. For example, glycidyl ethers of phenols such as bisphenol A, bisphenol F, resorcinol, phenol novolac and cresol novolac,
Glycidyl ether of glycidyl ethers of alcohols such as butanediol, polyethylene glycol, polypropylene glycol, glycidyl esters of carboxylic acids such as phthalic acid, isophthalic acid and tetrahydrophthalic acid, aniline and isocyanuric acid Glycidyl-type (including methylglycidyl-type) epoxy resins substituted with groups, vinylcyclohexene diepoxide obtained by epoxidizing the olefin bond in the molecule, 3,4-epoxycyclohexylmethyl-
3,4-epoxycyclohexanecarboxylate, 2
-(3,4-epoxy) cyclohexyl-5,5 spiro (3,4-epoxy) cyclohexane-m-dioxane, etc., so-called alicyclic epoxy resin, biphenyl type epoxy resin, polyfunctional epoxy resin having a naphthalene skeleton,
A halogenated phenol novolac type epoxy resin or the like is used. Of these epoxy resins, the most suitable is
The general formula (2)

[0016]

Embedded image

(Wherein R represents a hydrogen atom or a methyl group and may be different from each other; n ₂ represents an integer of 0 to 2), and two or more epoxy groups and biphenyl per molecule. A biphenyl type epoxy resin having a skeleton,
Or general formula (4)

[0018]

[Chemical 6]

An epoxy resin having a dicyclopentadiene skeleton represented by the formula (n = 1 to 10), or a general formula (5)

[0020]

[Chemical 7]

Or the general formula (6)

[0022]

Embedded image

Or the general formula (7)

[0024]

[Chemical 9]

There is an epoxy resin having a naphthalene skeleton represented by the formula (n = 1 to 10). In addition, two or more of these epoxy resins can be used in combination with a liquid epoxy resin, if necessary.

The curing agent used in the present invention is not particularly limited, and known curing agents can be used. For example,
Novolaks obtained by condensing phenol, cresol, xylenol, etc. and formaldehyde, etc. with an acidic catalyst, polycondensates of phenol / aralkyl ethers, dicyclopentadiene compounds, compounds having a naphthalene skeleton, polymers of alkenylphenols, etc. is there. Among them, the curing agent represented by the general formula (3) is

[0027]

[Chemical 10]

(In the formula, m represents an integer of 1 to 10.) 1
It is a polycondensate of a phenol having at least two hydroxyl groups per molecule and an aralkyl ether, and is particularly suitable for the biphenyl type epoxy resin represented by the general formula (2). It is added in an amount of 0.5 to 1.5 equivalents, preferably 0.8 to 1.2 equivalents, relative to the epoxy resin. If it is less than 0.5 equivalent, the curing of the epoxy resin will be insufficient and the cured product will be inferior in heat resistance, moisture resistance and electrical properties. On the other hand, if it exceeds 1.5 equivalents, the curing agent component becomes excessive and a large amount of phenolic hydroxyl groups remain in the cured resin, resulting in poor electrical properties and moisture resistance. As the above-mentioned curing agent, within a range not impairing the object of the present invention, 70% by weight or less of another curing agent is used together with a condensate of phenols and aldehydes such as phenol novolac resin. You can also

As the inorganic filler, fused silica, crystalline silica, alumina, calcium carbonate, zirconium silicate,
Fine powders of calcium silicate, talc, clay, mica, etc. can be used. As for the inorganic filler, it is desirable to add 50 to 90% by volume of the inorganic filler to the entire resin composition. These inorganic fillers are added for the purpose of improving the thermal expansion coefficient, thermal conductivity, elastic modulus, etc. of the cured product, and if the blending amount is less than 50% by volume, these properties cannot be sufficiently improved, and If it exceeds 90% by volume, the viscosity of the resin composition remarkably increases and the fluidity decreases, making molding difficult. The average particle size of the inorganic filler is particularly preferably in the range of 0.1 to 50 μm. If it is less than 0.1 μm, the viscosity of the resin composition will increase, and if it exceeds 100 μm, the resin component and the filler will be easily separated from each other, and the cured product will become uneven or the cured product characteristics will vary. Fillability into narrow gaps is reduced. For example, when the filler is blended in an amount of 75% by volume or more, it is preferable that the filler particles have a spherical shape rather than a square shape and that the particle size distribution is in a wide range of 0.1 to 100 μm. Since such a filler tends to have a close-packed structure, the viscosity of the material does not increase even if the compounding amount is increased, and a composition having excellent fluidity can be obtained.

In the present invention, a flexibilizing agent or the like for increasing the toughness and lowering the elastic modulus of the cured resin can be used if necessary. As the flexibilizer, those which are incompatible or partially compatible with the epoxy resin and the curing agent can lower the elasticity of the cured product without lowering the glass transition temperature so much that the butadiene / acrylonitrile copolymer or A butadiene-based flexibilizing agent such as a modified copolymer having an amino group, an epoxy group or a carboxyl group at its terminal or side chain, an acrylonitrile-butadiene-styrene copolymer, or an amino group or a hydroxyl group at the terminal or side chain, A modified silicone-based elastomer having an epoxy group, a carboxyl group, or the like is used, and the silicone-based flexibilizing agent is particularly effective in terms of moisture resistance and purity. The blending amount of the flexibilizer is 2 to 2 with respect to the total resin composition.
0% by weight is preferred. If the blending amount is less than 2% by weight, there is almost no effect on the toughness and low elastic modulus of the cured product. Also,
If it exceeds 20% by weight, the fluidity of the resin composition and the mechanical strength at high temperature are remarkably reduced, or the flexibilizing agent is raised on the surface of the cured resin to stain the molding die, which is not preferable.

In addition to the above-mentioned various additives, various silane-based compounds, titanium-based compounds, aluminum chelates, aluminum / zirconium-based compounds, etc. are used as coupling agents for increasing the adhesiveness between the resin component and the filler. Known additives can be used. Further, known compounds such as carnauba wax, montanic acid wax, polyethylene wax and polyalkylene wax may be used as a release agent. Known compounds such as carbon black, titanium oxide, red lead and red iron oxide may be used as the colorant.

Each of the above materials can be usually melted and kneaded at 50 to 100 ° C. by using a mixing roll, an extruder, a kneader, etc. to form a sealing material.

[0033]

The reason why the semiconductor device of the present invention exhibits excellent productivity and solder reflow resistance is considered as follows.

First, the epoxy resin composition using the curing accelerator represented by the general formula (1) shows excellent productivity because the curing accelerator of the present invention is extremely stable at a temperature near room temperature. Since it has so-called excellent latent reactivity that cures quickly when heated, it prevents the melt viscosity of the resin composition from increasing during curing and improves the wettability of the object to be sealed. It is considered that this is because a molded product having extremely few voids can be obtained. Moreover, since the encapsulating material has latent curability, it is easy to fill the details of the mold, and since the curing is quick, the mold releasability of the molded product is extremely good. Therefore, the mold release property of the molded product is excellent, and the resin-sealed semiconductor device can be easily taken out from the mold without being damaged. Therefore,
A highly reliable resin-sealed semiconductor device can be obtained.

Further, excellent solder reflow resistance is exhibited because a semiconductor device having few voids and no damage and high molding reliability can be obtained as described above. It is thought to be obtained.

The epoxy resin used in the present invention is not particularly limited, but the reason why it is particularly preferable to use a biphenyl type epoxy resin, a dicyclopentadiene type epoxy resin or a naphthalene type epoxy resin is as follows. It is hydrophobic in terms of chemical structure, and because the cured product has a high density, the packing of the molecular chains is dense, which makes it difficult for the formed network structure to permeate water. It is considered that it has a low hygroscopicity due to the low concentration of hydroxyl groups. Therefore,
It is considered that the sealing material using such a resin itself has low hygroscopicity. In addition, such a resin has a high glass transition temperature of a cured product and has a low cross-linking density, so that the resin is flexible and the residual stress generated by curing is small. The adhesiveness to the frame is excellent, and it is considered that the amount of water entering the package from these interfaces is greatly reduced. Therefore, it is considered that the reason why the solder reflow resistance is remarkably improved is that the amount of water entering the package is significantly reduced as described above.

It is considered that the reason why the solder reflow resistance is remarkably improved is that the amount of water entering the package is significantly reduced as described above.

In particular, when the epoxy resin represented by the above general formula (2) is used, excellent solder reflow resistance is exhibited, in addition to the low hygroscopicity and high adhesiveness of the resin, It is considered that by using the curing accelerator of the invention, the molecular chain packing of the encapsulating resin becomes denser, the moisture absorption rate becomes smaller, and the flexibility of the cured product increases, so that the adhesive strength becomes higher. . Furthermore, since the curing accelerator used in the present invention has a latent reaction accelerating property, it is considered that the melt viscosity of the resin composition at the time of curing is reduced and the wettability with respect to the sealed object is improved.

Further, the resin composition used in the present invention is less likely to cause voids during molding because the curing accelerator selectively reacts with the low molecular weight component in the epoxy resin or the curing agent at a relatively low temperature, This is considered to be due to the effect of reducing volatile components generated when the resin cures.

The above-mentioned curing accelerator has the effect of imparting excellent characteristics to the encapsulating material made of the epoxy resin composition and greatly improving various reliability of the semiconductor device after encapsulation. This is unexpected.

[0041]

EXAMPLES The present invention will be described in more detail below with reference to examples.

[Examples 1 to 8 and Comparative Examples 1 to 7] Table 1 shows the names and abbreviations of the curing accelerators used in Examples and Comparative Examples.

[0043]

[Table 1]

The epoxy resin compositions shown in Tables 2 and 3 were
After kneading with a twin-screw roll heated to 0 to 100 ° C. for about 10 minutes, it was cooled and pulverized to obtain a sealing material. The compounding amounts in the table are shown in parts. In addition, in the compounding method of the curing accelerator,
Single addition is a method of mixing all the components of the encapsulating material in a vinyl bag, and melt addition is a method in which a curing accelerator and a curing agent are heated and melted at 100 ° C or higher in advance, mixed, cooled, pulverized and then mixed with other components. This is a method of mixing in a plastic bag. After making the various encapsulating materials in the table, storing them at 4 ° C for one day and then 180
Transfer molding was performed under the conditions of 70 ° C., 70 kg / cm ² and 90 seconds, and the moldability, the amount of voids in the molded product, the moisture absorption rate, and the storage stability of the sealing material were evaluated.

[0045]

[Table 2]

[0046]

[Table 3]

[0047]

[Table 4]

[0048]

[Table 5]

The results are shown in Tables 4 and 5 and FIG.

In the table, spiral flow is EMMI-1-
The spiral flow measuring mold defined in No. 66 was sandwiched between the upper and lower hot plates of the transfer molding machine, and 25 g of the sealing material was molded under the above conditions, and the length of the molded product was evaluated. The hot hardness was measured by transfer molding a disk having a diameter of 20 mmφ and a thickness of 2 mm under the above conditions, and the hardness immediately after the molding die was opened was measured with a Barcol hardness meter. A burr-generating mold was used to evaluate the burr length. That is, narrow chambers having different gaps were provided in the mold, and the distance flowing into the narrow chamber having a gap of 5 μm when transfer molding was performed under the above conditions was measured. The internal voids of the molded product were evaluated by observing the disk having the diameter of 20 mmφ with a soft X-ray fluoroscope.

The moisture absorption rate is a value obtained by placing a disc having a diameter of 90 mmφ and a thickness of 2 mm in a polytetrafluoroethylene-SUS double pressure vessel and absorbing moisture in an atmosphere of 60 ° C./100% RH for 168 hours. The moisture absorption rate was used.

Further, the sealing material is set at a temperature of 25 ° C. and a humidity of 90%.
The time-dependent change in fluidity (spiral flow) when stored in a RH constant temperature and humidity chamber for a predetermined time was measured, and the results are shown in FIG.

From Tables 4 and 5, the encapsulating material of this embodiment is excellent in moldability such as fluidity and hot hardness, and the moisture absorption of the molded article is small, so that it is suitable as a semiconductor encapsulating material. I understand.

It can be seen from FIG. 1 that the encapsulating material of this example is particularly excellent in storage stability.

Next, a silicone chip (6 × 6 mm) having aluminum zigzag wiring formed on the surface thereof is mounted on a 42 alloy lead frame, and a gold wire (ψ30 μm) is provided between the aluminum electrodes on the chip surface and between the lead frames.
After wire bonding in m), the whole is transfer-molded and sealed under the same conditions as above using the same materials as used in Examples 1-8 and Comparative Examples 1-7, and further at 180 ° C. for 5 minutes.
QFP (Quad Flat Package) -6 after post-curing
4 pins were produced. We performed solder reflow resistance, humidity resistance reliability test, and high temperature storage reliability test of each semiconductor device. The results are shown in Table 6. For the solder reflow resistance test, the above resin-encapsulated semiconductor device was tested at 168 at 85 ° C./85% RH.
After absorbing moisture for 9 hours, in an infrared reflow oven at 240 ° C,
A test of heating for 0 seconds was performed to check the number of cracks in the package.

For the moisture resistance reliability test, the above semiconductor device
After absorbing moisture for 168 hours in a thermo-hygrostat at 95 ° C and 95% RH, vapor reflow treatment is performed at 215 ° C / 90 seconds, and after dipping in salt water, 500 hours at 65 ° C / 95% RH. After standing, the number of elements in which aluminum corrosion occurred was examined.

In the high temperature storage reliability test, the semiconductor device
It was left in a high temperature bath at 00 ° C. for 200 hours, and the connection failure at the joint between the gold wire and the aluminum wiring was examined.

From Table 6, it can be seen that the semiconductor device of this embodiment is excellent in solder reflow resistance, moisture resistance reliability, high temperature storage characteristics and the like.

[0059]

[Table 6]

The encapsulating material of each of the above examples is excellent in moldability,
Moreover, it is understood that the moisture absorption rate of the molded product is small, and high reliability is obtained as a semiconductor device.

[0061]

The resin-encapsulated semiconductor of the present invention is excellent in moldability and moisture resistance reliability, and can achieve high reliability and high density of mounting.

[Brief description of drawings]

FIG. 1 shows a sealing material of the present invention and a material of a comparative example, 2
It shows the change with time of the fluidity of the material when stored at 5 ° C. and a humidity of 90% RH. It can be seen that the encapsulating material of the present invention has excellent storage stability.

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification number Reference number within the agency FI Technical indication location H01L 23/29 23/31 (72) Inventor Akira Nagai 7-1 Omika-cho, Hitachi-shi, Ibaraki Hitachi Ltd., Hitachi Research Laboratory, Ltd. (72) Inventor, Masahiko Ogino, 1-1 1-1 Omika-cho, Hitachi City, Ibaraki Prefecture Hitachi Ltd., Hitachi Research Laboratory, (72) Inventor, Ryo Mogi, 7 Mika-cho, Oita, Ibaraki Prefecture 1-chome 1-1 Hitachi Research Laboratory, Hitachi Ltd. (72) Inventor Kazuhiro Suzuki 7-1-1 Omika-cho, Hitachi-shi, Ibaraki Hitachi Ltd. Hitachi Research Laboratory (72) Inventor Kunihiko Nishi Kodaira, Tokyo 5-20-1 Joumizuhoncho, Ichi, Japan Semiconductor Company, Hitachi Ltd.

Claims (6)

[Claims] 1. A resin-encapsulated semiconductor device coated or molded with an epoxy resin composition obtained by melt-kneading components comprising an epoxy resin, a curing agent, a curing accelerator, and a filler as essential components. The agent has the general formula (1) (In the formula, X is a quaternary phosphonium ion, and R is C1-4.
Is an alkyl group or an alkoxy group, and n ₁ is an integer of ₁ to 2. ) A resin-encapsulated semiconductor device, which is an organic phosphorus compound represented by 2. The epoxy resin has the general formula (2): (In the formula, R represents a hydrogen atom or a methyl group and may be different from each other. N ₂ represents an integer of 0 to 2.) An epoxy resin having a biphenyl skeleton or a dicyclopentadiene skeleton. The resin-encapsulated semiconductor device according to claim 1, comprising at least one kind of epoxy resin or epoxy resin having a naphthalene skeleton. 3. The curing agent is represented by the general formula (3): The resin according to claim 1, wherein the polycondensate of phenol and aralkyl ether represented by the formula (m represents an integer of 1 to 10) is contained in an amount of 100 to 30% by weight based on the total amount of the curing agent. Sealed semiconductor device. 4. The curing accelerator represented by the general formula (1) is 500 to 1 with respect to 100 parts by weight of the epoxy resin.
The resin-encapsulated semiconductor device according to claim 1, wherein the resin-encapsulated semiconductor device is contained in the composition. 5. The resin encapsulation according to claim 1, wherein the curing agent represented by the general formula (3) is blended in an amount of 0.5 to 1.5 equivalents with respect to the epoxy resin. Type semiconductor device. 6. The filler has a particle size distribution of 0.1 to 100 μm.
2. The resin-encapsulated semiconductor device according to claim 1, wherein the resin-encapsulated semiconductor device is a spherical or square-shaped filler, or a combination of both.