JPH08162680A - Thermo-electric converter - Google Patents

Abstract

PURPOSE: To improve the integration rate of a semiconductor element and the thermo-electric effect, to reduce the cost and to simplify the assembly steps in a thermo-electric converter which can be applied to a cooler, a heater or a temperature controller having both functions. CONSTITUTION: A thermo-electric converter comprises a conductive plate 6a connected to both end faces of at least a pair of N-type semiconductor element 5a and a P-type semiconductor element 5b in such a manner that both outer surfaces are sandwiched between insulating boards 8 each formed of electrically insulating and thermally conductive materials, the elements 5a, 5b are connected electrically in series to absorb heat at one side and to radiate heat at the other side, wherein the shape of the plate 6a is extended in a horizontal surface direction to increase its area.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION The present invention relates to a cooling device, a heating device,
Alternatively, regarding a thermoelectric conversion device that can be applied to a temperature control device that has both of them, it is possible to improve the semiconductor element integration rate and thermoelectric effect, reduce the cost, and simplify the assembly process, especially by configuring parts with a new structure. The present invention relates to a thermoelectric conversion device.

[0002]

2. Description of the Related Art The basic structure of a conventional thermoelectric conversion device will be described with reference to FIG. FIG. 13 shows a main part of a device that performs cooling and the like using a thermoelectric conversion device, and its basic configuration is composed of a thermoelectric conversion device 1, a cooling plate 2, a heat dissipation plate 3 and a DC power supply 4. In the thermoelectric conversion device 1, a plurality of N-type semiconductor elements 5a and P-type semiconductor elements 5b for thermoelectric conversion are alternately arranged at regular intervals, while the N-type and P-type semiconductor elements 5a and 5b are adjacent to each other on the opposite side. A conductive plate (electrode plate) 6 is provided between the upper surfaces of the polar semiconductor elements and between the lower surfaces of the opposite-polarity semiconductor elements adjacent to each other on the other side, and the upper and lower conductive plates 6 and the respective semiconductor elements 5a and 5b are soldered respectively. 7 and the like, and the N-type semiconductor element 5a and the P-type semiconductor element 5b are alternately electrically connected in series. Further, the semiconductor element rows thus connected are vertically sandwiched and supported and fixed by an insulating substrate 8 made of an electrically insulating and thermally conductive material.

When a voltage is applied from the DC power source 4 to both ends of the series connection in this way, that is, to both ends of the lower conductive plate 6, the Peltier effect causes an endothermic action on the upper surface side of the thermoelectric conversion device 1 to generate heat. Is conveyed to the heat dissipation plate 3 on the lower surface side through the thermoelectric conversion device 1. The heat transfer at this time is N
In the type semiconductor element 5a, heat is transferred in the direction opposite to the direction of the direct current I, while in the P-type semiconductor element 5b, heat is transferred in the same direction as the direction of the current I. The heat absorption and the amount of heat corresponding to the electric input are radiated on the lower surface side of the thermoelectric conversion device 1.

Therefore, when the heat of the heat dissipation plate 3 is efficiently dissipated, the heat is continuously transferred from the cooling plate 2 to the heat dissipation plate 3. Therefore, it is necessary to suppress the thermal resistance of both the cooling plate 2 and the heat dissipation plate 3, and because of this necessity, both are in contact with the thermoelectric conversion device 1 via the heat conductive grease 9.
Further, as the material of the cooling plate 2 and the heat dissipation plate 3, a metal material such as a finned aluminum extruded material is mainly used.

FIG. 12 shows the structure of the main part of a conventional thermoelectric conversion device. FIG. 12 (a) is a front sectional view thereof, and FIG. 12 (b) is a plan view when the upper and lower insulating substrates 8 are removed. In (a), the shape of the copper conductive plate (electrode plate) 6 is a flat plate, and the width thereof is slightly wider than the width (outer diameter) of the semiconductor element 5, but they are almost the same.

Further, Japanese Patent Laid-Open No. 2-103349 has been disclosed as an example in which the shape of the conductive plate is partially deformed. This is formed by forming a deformable portion (constricted portion) between the N-type semiconductor element and the P-type semiconductor element, the deformable portion (constricted portion) being deformable in the plane direction of the conductive plate joined at both ends thereof. A thermoelectric element (thermoelectric conversion device) such as a spiral arrangement or a U-turn parallel arrangement can be arranged in various ways according to the application. Further, as an example of using a heat insulating material between each semiconductor element of a thermoelectric conversion device, Japanese Patent Laid-Open No. 62-28
Japanese Patent No. 7678 is disclosed. This is a thermoelectric effect element (thermoelectric conversion device) configured by filling a space between the N-type semiconductor element, the P-type semiconductor element, and the upper and lower thin plates (insulating substrate) with a foaming heat insulating material, and is a thin plate having a heat generating action. Side (high temperature side)
To reduce the amount of heat transfer due to convection and radiation of air through the space between the upper and lower thin plates to the thin plate side (low temperature side) having an endothermic effect, and improve the performance of the thermoelectric effect element.

By the way, FIG. 11 shows an example of displacement of each element when N-type and P-type semiconductor elements are mounted and soldered on a conductive plate of the present invention described later. The N-type semiconductor element and the P-type semiconductor element 5 are placed on the conductive plate 6d coated with the solder paste 10 and reflow soldering is performed while applying pressure from above. Since the tool is not used, each semiconductor element may be displaced from the predetermined position in the lateral direction shown by the arrow when pressed from above.

Japanese Patent Laid-Open No. 58-199578 and Japanese Patent Laid-Open No. 63-128681 disclose examples of preventing the displacement of each semiconductor element with respect to the conductive plate. In the former, when mounting and fixing each semiconductor element on a conductive plate, a semiconductor element arranging jig for positioning is used to prevent displacement of each element, and each semiconductor element is placed in the jig. Put in.

The N-type semiconductor element and the P-type semiconductor element are placed on the conductive plate thus coated with the solder paste, and reflow soldering is performed while applying pressure from above. On the other hand, the latter is an N-type thermoelectric element using an insulating holder having a plurality of thermoelectric element insertion holes punched at predetermined positions and dimensions so that both ends of each thermoelectric element (semiconductor element) are respectively positioned. A P-type thermoelectric element is inserted, and a conductive layer (conductive plate) is positioned and fixed to both ends of each element at predetermined opposing positions.

[0010]

However, the above-mentioned conventional thermoelectric conversion device has the following problems.

In the structure shown in FIG. 12A,
Since the width of the conductive plate joined to both end surfaces of the pair of N-type and P-type semiconductor elements is almost the same as the width of each semiconductor element for the above-mentioned reason, the area of the conductive plate in contact with the insulating substrate is limited. Therefore, the efficiency of heat conduction from the heat absorption side to the heat radiation side via the semiconductor element or the like is not improved, and as a result, the thermoelectric effect is not good. Further, in the process of assembling the thermoelectric conversion device, a conductive plate arranging jig is required in order to arrange the conductive plates at fixed positions.

In the thermoelectric conversion device described in Japanese Patent Laid-Open No. 62-287678, a foam insulating material is filled in each space between the N-type semiconductor element, the P-type semiconductor element, and the upper and lower thin plates (insulating substrate). Therefore, a large amount of filling is required, and since the foam insulation material is filled into each space after the thermoelectric effect element (thermoelectric conversion device) is assembled, the filling work becomes complicated and the cost is reduced. High work efficiency.

In the thermoelectric conversion device described in Japanese Patent Laid-Open No. 58-199578, an N-type semiconductor element and a P-type semiconductor element are placed at predetermined positions on a conductive plate and soldered without causing positional displacement. In order to perform the above, a positioning semiconductor element arranging jig is required. Further, in the thermoelectric conversion device described in Japanese Patent Laid-Open No. 63-128681, a plurality of thermoelectric element (semiconductor element) insertion holes are formed in an insulating holder formed of an insulating material such as foam polystyrene and solid paper. Therefore, the dimensional error during manufacturing is larger than that of the array jig, and the error increases as the number of insertion holes increases, and the placement of the thermoelectric element in the fixed position shifts, or when the thermoelectric element is inserted. There was a problem in terms of quality and the assembling process due to the play being too large. Furthermore, since each element and the conductive layer (conductive plate) are positioned at predetermined positions by using the insulating holder, they are fixed. Therefore, depending on the type of the insulating material, a fixing means by soldering that has a large thermal effect may be used. It had the problem of not being suitable.

The present invention has been made in view of the above-mentioned various problems, and improves the semiconductor element integration rate and heat transfer efficiency of a thermoelectric conversion device and suppresses heat transfer due to convection and radiation of air. To improve the thermoelectric effect,
It is an object of the present invention to prevent positional displacement of semiconductor elements and the like without using an arranging jig, simplify the assembly process, and reduce equipment jig costs.

[0015]

In order to achieve the above object, the present invention is to bond conductive plates to both end faces of at least a pair of an N-type semiconductor element and a P-type semiconductor element, and to electrically connect both outer surfaces thereof to each other. Electrically insulating, and sandwiched between insulating substrates made of a thermally conductive material, the elements are alternately electrically connected in series, while absorbing heat on one side, In the thermoelectric conversion device that radiates heat on the other side, the following measures are taken.

That is, according to the first aspect of the present invention, the shape of the conductive plate is stretched in the horizontal plane direction to enlarge the area thereof. In the invention according to claim 2, the shape of the conductive plate is formed in a U-shaped cross section or an L-shaped cross section, and the surface of the insulating substrate facing the conductive plate is fitted in the shape of the conductive plate. A convex portion is formed.

Further, according to a third aspect of the present invention, the conductive plate is formed in a box shape having a recess at the center, and the recess of the conductive plate is fitted to the surface of the insulating substrate facing the conductive plate. The convex portions are formed so as to match each other. In addition to the configuration of the invention according to claim 1, claim 2 or claim 3, the invention according to claim 4 is between the insulating substrate on the heat absorption side and the conductive plates adjacent to each other, and on the heat dissipation side. A heat insulating material such as a foaming heat insulating material is disposed in the space between the insulating substrate and the conductive plates adjacent to each other.

According to the invention of claim 5, in addition to the structure of the invention of claim 1, claim 2 or claim 3, both end faces of the N-type semiconductor element and the P-type semiconductor element are A plurality of positioning protrusions are provided on the surface of the conductive plate so that the conductive plate is positioned at a predetermined opposing position.

[0019]

The thermoelectric conversion device according to the present invention has the above-mentioned structure.
According to the first aspect of the invention, the shape of the conductive plate is stretched in the horizontal plane direction to enlarge the area of the conductive plate in contact with the insulating substrate, so that the heat conduction efficiency from the heat absorbing side to the heat radiating side via the semiconductor element is increased. Is improved, and as a result, the thermoelectric effect of the thermoelectric conversion device is improved.

According to the second aspect of the present invention, the conductive plate is formed in a U-shaped cross section or an L-shaped cross section as compared with the structure of the first aspect to reduce the gap between the semiconductor elements. By increasing the area of the conductive plate in contact with the insulating substrate, the semiconductor element integration rate per unit area is improved, and the heat transfer efficiency from the heat absorbing side to the heat radiating side via the semiconductor element is improved. The thermoelectric effect of the thermoelectric conversion device is improved.

According to the third aspect of the present invention, the conductive plate is formed into a box shape having a recess in the center, and the area of the conductive plate contacting the insulating substrate is set to the two embodiments described above. In comparison with the above, the efficiency of heat transfer from the heat absorption side to the heat dissipation side via the semiconductor element or the like is further improved, and as a result, the thermoelectric effect of the thermoelectric conversion device is improved. Further, in the assembly process of the thermoelectric conversion device, the recesses of the box-shaped conductive plate can be easily placed and arranged by an automatic mounter or the like so as to fit into the protrusions of the insulating substrate. Therefore, in the above structure, a jig for arranging the conductive plates is not required, and the assembling workability is improved.

According to the fourth aspect of the present invention, the heat insulating material such as the foaming heat insulating material is provided in each space between the heat absorbing side insulating board and the heat radiating side insulating substrate and the conductive plates adjacent to each other. It is possible to prevent heat transfer due to air convection and radiation from the insulating substrate on the heat radiating side to the insulating substrate on the low temperature side (heat absorbing side). As a result, the heat loss through the space of the thermoelectric conversion device can be reduced, and the thermoelectric effect is improved.

According to the fifth aspect of the present invention, in the assembling process of the thermoelectric conversion device, the plurality of positioning protrusions are provided on the surface of the conductive plate, so that each semiconductor element can be easily placed at a predetermined position on the conductive plate. Further, it is possible to perform soldering while applying pressure from above without causing positional displacement. Therefore, in the above structure, the jig for arranging the semiconductor elements is not required, and the assembling workability is improved.

[0024]

EXAMPLES Examples of the present invention (first to sixth examples) are described below.
Will be described with reference to the drawings. In the present embodiment, constituent elements common to those of the conventional example will be designated by common reference numerals.

(First Embodiment) FIG. 1 shows a structure of a main part of a thermoelectric conversion device according to a first embodiment of the present invention.
(A) is a front sectional view, and (b) is a plan view when upper and lower insulating substrates are removed.

In FIG. 1A, at least a pair of N
-Type and P-type semiconductor elements 5a and 5b have conductive plates 6a made of metal electrodes made of copper or the like solder-bonded to both end faces thereof, and the outer both surfaces thereof are electrically insulating such as ceramic or alumite, and It is sandwiched and fixed by an insulating substrate 8 made of a thermally conductive material.

Here, the shape of the copper conductive plate (electrode plate) 6a in contact with the insulating substrate 8 is a flat plate shape like the conventional shape, but its width is the width of the N-type and P-type semiconductor elements 5a, 5b. Since it is stretched in the horizontal direction so as to be larger than the (outer diameter), compared to the shape of the conventional conductive plate 6 shown in FIG.
The area has expanded significantly.

In this embodiment, by using such a plate-shaped conductive plate 6a, the area of the conductive plate in contact with the upper and lower insulating substrates 8 is enlarged, so that the semiconductor element 5 from the heat absorption side 11 is increased.
The efficiency of heat conduction to the heat radiation side 12 via the a and 5b is improved. Therefore, as a result, the thermoelectric effect of the thermoelectric conversion device can be improved.

(Second Embodiment) FIG. 2 shows a structure of a main part of a thermoelectric conversion device according to a second embodiment of the present invention.
(A) is a front sectional view, (b) is a side view, and (c) is a plan view when upper and lower insulating substrates are removed. In addition, FIG.
FIG. 3 is a front cross-sectional view taken along the line AA of FIG.

2 and 3, the shape of the conductive plate 6b made of a metal electrode made of copper or the like solder-bonded to the upper and lower surfaces of the pair of basic semiconductor elements 5a and 5b of N-type and P-type is shown in FIG. It has a U-shaped cross section. The opposing surfaces of the insulating substrate 8a, which are in contact with the outer side surfaces of the upper and lower conductive plates 6b, are formed with projections 8a 'so as to fit the shape of the conductive plate having a U-shaped cross section. The convex portion 8 is provided so that a plurality of pairs of semiconductor elements 5a and 5b configured by PN junction with the upper and lower conductive plates 6b can be sandwiched and fixed.
A plurality of a'is formed to form a step shape.

In the meantime, in the first embodiment, the shape of the flat conductive plate is stretched in the horizontal direction to form the insulating substrate 8.
When the area of the conductive plate 6a in contact with is increased, the heat conduction efficiency is improved, but the gap x (pitch) between the semiconductor elements is increased.
As a result, the new problem arises that the semiconductor element integration rate per unit area becomes worse.

In this embodiment, with respect to the structure of the first embodiment (the flat conductive plate 6a), the area of the conductive plate 6b is made the same and the shape is made to have a U-shaped cross section so that the conductive plate 6b can be fitted therein. By forming the convex portion 8a 'on the opposing surface of the insulating substrate, as shown in FIG. 2C, the vertical and horizontal dimensions of the conductive plate in the horizontal plane direction are reduced, and the gap x between the adjacent semiconductor elements is reduced. Since the size is reduced, the semiconductor element integration rate per unit area is improved.

In addition, as in the first embodiment, the area of the conductive plate in contact with the insulating substrate is enlarged as compared with the conventional structure, so that the heat radiating side 12 from the heat absorbing side 11 via the semiconductor elements 5a and 5b. The efficiency of heat transfer to heat is improved. Therefore, as a result, the thermoelectric effect of the thermoelectric conversion device is improved.

(Third Embodiment) Next, FIG. 4 shows a structure of a main part of a thermoelectric conversion device according to a third embodiment of the present invention.
(A) is a front view, (b) is a side view, and (c) is a plan view when upper and lower insulating substrates are removed. Further, FIG. 5 is a front cross-sectional view taken along the line AA as viewed from the arrow in FIG.

The third embodiment is a modification of the second embodiment, in which the cross section of the conductive plate is formed in an L shape. That is, in FIG. 4 and FIG. 5, the shape of the conductive plate 6c made of a metal electrode made of copper or the like soldered to the upper and lower surfaces of the pair of basic semiconductor elements 5a and 5b composed of N-type and P-type is L. It has a V-shaped cross section.

The facing surface of the insulating substrate 8b, which is in contact with both outer side surfaces of the upper and lower conductive plates 6c, is the same as the adjacent L-shaped conductive plate 6c facing the L-shaped conductive plate 6c, as is particularly apparent in FIG. A convex portion 8b 'is formed so as to be fitted over the pair of semiconductor elements 5a, and a pair of semiconductor elements 5a configured by PN junction with the upper and lower conductive plates 6c, which are the bases thereof, are formed similarly to the second embodiment. , 5b can be clamped and fixed,
It has a stepped shape in which a plurality of convex portions 8b 'are formed.

In this embodiment, in contrast to the structure of the first embodiment, the conductive plate 6c is formed in an L-shaped cross section, so that as shown in FIG. 4C, the conductive plate 6c extends in the horizontal and vertical directions. And the gap x between the adjacent semiconductor elements is smaller than that of the second embodiment (having the U-shaped conductive plate 6b).
Since it is the second smallest, the semiconductor element integration rate per unit area is improved.

In addition, as in the first and second embodiments, the area of the conductive plate in contact with the insulating substrate is increased as compared with the conventional structure, so that the semiconductor elements 5a, 5b from the heat absorbing side 11 are expanded.
The efficiency of heat conduction to the heat radiation side 12 via the heat conduction is improved. Therefore, as a result, the thermoelectric effect of the thermoelectric conversion device is improved.

(Fourth Embodiment) As is clear from the second and third embodiments, it is possible to increase the area of the conductive plate in contact with the insulating substrate of the thermoelectric conversion device and reduce the gap between the semiconductor elements. The heat conduction efficiency and the semiconductor element integration rate can be improved, and as a result, the thermoelectric effect of the thermoelectric conversion device can be improved. Therefore, in the fourth embodiment, the U-shaped cross section on both sides of the conductive plate of the second embodiment is used. Is made into a box shape having a U-shaped cross section all around, and is composed of a box-shaped conductive plate having a concave portion at the center and an insulating substrate having a convex portion that fits into the concave portion. .

FIG. 6 shows a structure of a main part of a thermoelectric conversion device according to a fourth embodiment of the present invention, in which (a) is a front view,
(B) is a side view and (c) is a plan view when upper and lower insulating substrates are removed. Further, FIG. 7 is a front sectional view taken along the line AA of FIG. 6B.

In FIGS. 6 and 7, the conductive plate 6d solder-bonded to the upper and lower surfaces of the semiconductor elements 5a and 5b composed of a pair of basic N-type and P-type semiconductors has a concave portion 6 at the center.
It is formed in a box shape having d '. The opposing surfaces of the insulating substrate 8c, which are in contact with the outer side surfaces of the upper and lower conductive plates 6d, are formed with convex portions 8c 'so as to fit in the box-shaped concave portions 6d' of the conductive plates, and the convex portions 8c 'are further formed. Are formed at regular intervals so that a plurality of pairs of semiconductor elements 5a and 5b configured by PN junction with the upper and lower conductive plates 6d, which are the basis, can be sandwiched and fixed.

As described above, in this embodiment, the U-shaped cross sections on both sides of the conductive plate of the second embodiment are box-shaped with the entire circumference being a U-shaped cross section. ), The gap x between adjacent semiconductor elements is kept small, and the area of the conductive plate in contact with the insulating substrate is maximized as compared with the second and third embodiments.
The efficiency of heat conduction from 1 to the heat radiation side 12 via the semiconductor elements 5a and 5b is further improved, and as a result, the thermoelectric effect of the thermoelectric conversion device is improved.

In addition, in the process of assembling the thermoelectric converter, an automatic mounter or the like can be used easily so that the concave portion 6d 'of the box-shaped conductive plate 6d fits into the convex portion 8c' of the insulating substrate 8c. Since it can be placed and arranged securely,
The conductive plate arranging jig that has been used conventionally is no longer necessary.

(Fifth Embodiment) The Peltier effect in the thermoelectric conversion device is that heat is absorbed on one side which is 10 mm or less in thickness and is close to one side.
Heat radiation is generated on the other side, and since the space between the N-type and P-type semiconductor elements is an air layer, air convection from the high temperature side with heat radiation to the low temperature side with heat absorption Since heat transfer (heat loss) occurs due to radiation, and as a result, it affects the thermoelectric effect of the thermoelectric conversion device, in this embodiment, a heat insulating material such as a foaming heat insulating material is used, particularly workability and economical efficiency at the time of filling. In consideration of the above, the heat absorbing side insulating board and the heat radiating side insulating board are arranged in each space between the adjacent conductive plates to reduce heat loss.

That is, FIG. 8 shows an example of disposing a heat insulating material in the thermoelectric conversion device according to the second embodiment of the present invention.
(A) is a front view, (b) is a side view, and (c) is a plan view when upper and lower insulating substrates are removed. In addition, FIG.
It is a front sectional view taken along the line A-A of FIG.

As shown in FIGS. 8 and 9, on the heat absorbing side 11 and the heat radiating side 12 of the thermoelectric converter, the conductive plate 6b having the same shape and adjacent to the conductive plate 6b having the U-shaped cross section of the second embodiment. Further, a heat insulating material 13 such as a foaming heat insulating material is arranged in each space above and below the insulating substrate 8a. This insulation has a thermal conductivity of 0.017 kcal / mh
It has a heat insulating property of not higher than 0 ° C., and is, for example, a foamed polyurethane heat insulating material, a vacuum heat insulating material containing silica (SiO ₂ ) or a continuous urethane foam as a component.

Conventionally, as a method for reducing the heat loss through the air layer in the thermoelectric converter, each space between the upper and lower insulating substrates and the semiconductor element has been filled with a foaming heat insulating material. However, it requires a large amount of filling, and since the foam insulation material is filled into each space after the thermoelectric conversion device is assembled, the filling work becomes complicated, and the cost is high and the work efficiency is poor. It was

By adopting the above configuration in this embodiment, in the assembly process of the thermoelectric converter, first, the conductive plate 6b having a U-shaped cross section is placed and arranged on the convex portion 8a 'of the insulating substrate 8a. Since the heat insulating material 13 can be disposed in the space between the insulating substrate 8b and the conductive plates 6a adjacent to each other after soldering by soldering, the semiconductor element is assembled after the conventional thermoelectric conversion device is assembled. Compared to the method of filling the heat insulating material after sandwiching and fixing it with the upper and lower insulating substrates, the heat insulating material can be filled more easily and surely, and the filling amount is smaller, so that the cost is reduced and the assembly workability is greatly improved. improves.

In addition, convection of air from the insulating substrate on the high temperature side (heat radiation side 12) to the insulating substrate on the low temperature side (heat absorption side 11),
The transfer of heat due to radiation can be prevented. as a result,
Since the heat loss through the space of the thermoelectric conversion device can be reduced, the thermoelectric effect is improved.

(Sixth Embodiment) Finally, FIG. 10 shows an example in which a positioning projection is provided on a conductive plate according to a fourth embodiment of the present invention. (A) is a front view and (b) is a side view. FIG. 1C is a plan view when the insulating substrate is removed.

As shown in FIG. 10, the box-shaped conductive plate 6d of the fourth embodiment is mounted so that the concave portion 6d 'thereof fits into the convex portion 8c' of the insulating substrate 8c. This conductive plate 6d
Positioning protrusions 14 are provided on the surface of the device at predetermined positions (four peripheral positions) on which a pair of semiconductor elements 5 of N type and P type are mounted.

A plurality of these positioning protrusions 14 are formed on the conductive plate.
By providing the semiconductor element 5, it is possible to easily mount each semiconductor element 5 at a predetermined position on the conductive plate without using a semiconductor element arranging jig which has been conventionally required in the assembly process of the thermoelectric conversion device. it can. Further, even when soldering is performed while pressing each semiconductor element 5 from above, it is possible to prevent the displacement of the semiconductor element 5 as in the conventional case, so that the assembling workability is greatly improved.

Although the present invention has been described with respect to the first to sixth embodiments, the present invention is not limited to the above embodiments, and many modifications and alterations are made to the above embodiments within the scope of the present invention. Of course, changes can be made. For example,
In the fifth embodiment, the case where the heat insulating material is provided between the insulating substrate 8a of the second embodiment and the U-shaped conductive plates 6b adjacent to each other has been described, but the present invention is not particularly limited to this. It is also applicable as appropriate to the other first, third and fourth embodiments.

Further, in the sixth embodiment, an example in which the positioning projections 14 are provided on the surface of the box-shaped conductive plate 6d of the fourth embodiment which does not require a jig for arranging the conductive plates has been shown, but it is particularly limited to this. Instead, the positioning protrusions may be provided on the conductive plates of the other first to third embodiments.

In the present invention, the cooling surface and the heat radiating surface are reversed by switching the direction of the direct current to the thermoelectric conversion device utilizing the Peltier effect by a switching device (not shown), so that the thermoelectric conversion device of the present invention is cooled. It can be used as a device or a heating device.

[0056]

As described above, in the thermoelectric conversion device according to the first aspect of the present invention, the area of the conductive plate in contact with the upper and lower insulating substrates is increased by using the flat conductive plate, so that the heat absorption The heat conduction efficiency from the side to the heat dissipation side via the semiconductor element is improved, and as a result, the thermoelectric effect of the thermoelectric conversion device is improved.

Further, in the thermoelectric conversion device according to claim 2 of the present invention, as compared with the structure according to claim 1, the shape of the conductive plate is formed in a U-shaped cross section or an L-shaped cross section to form a semiconductor. By reducing the gap between the elements and expanding the area of the conductive plate in contact with the insulating substrate, the semiconductor element integration rate per unit area is improved, and heat from the heat absorbing side to the heat radiating side via the semiconductor element is increased. It has an excellent effect that the conduction efficiency is improved, and as a result, the thermoelectric effect of the thermoelectric conversion device is improved.

Further, in the thermoelectric conversion device according to the third aspect of the present invention, in addition to the effect of the second aspect, the conductive plate is formed into a box shape having a recess in the center. Even in the process of assembling the thermoelectric conversion device, the concave part of the box-shaped conductive plate can be easily and securely attached to the convex part of the insulating substrate with an automatic mounter, etc. without using the jigs for arranging the conductive plates that were required in the past. Can be placed on and arrayed. Therefore, the assembly workability is improved, and the excellent effects that the equipment jig cost can be reduced and the assembly process can be simplified are provided.

In the thermoelectric conversion device according to the fourth aspect of the present invention, a heat insulating material such as a foaming heat insulating material is provided in each space between the heat absorbing side insulating substrate and the heat radiating side insulating substrate and the conductive plates adjacent to each other. By arranging, after assembling the thermoelectric conversion device,
That is, as compared with the conventional method of filling the heat insulating material after sandwiching and fixing the semiconductor element with the upper and lower insulating substrates and the like, the heat insulating material can be easily and reliably filled, and the filling amount can be small, Cost reduction and assembly workability are greatly improved. In addition, convection of air from the insulating substrate on the heat radiation side to the insulating substrate on the heat absorption side and heat transfer due to radiation can be prevented. As a result, the heat loss through the space of the thermoelectric conversion device can be reduced, so that the thermoelectric effect is improved.

Further, in the thermoelectric conversion device according to claim 5 of the present invention, a plurality of positioning projections are provided on the surface of the conductive plate in the assembling step, so that the semiconductor element arranging jig which has been conventionally required is arranged. Each semiconductor element can be easily placed at a predetermined position on the conductive plate without using a tool, and soldering can be performed while applying pressure from above without displacement. Therefore, the assembly workability is improved, and the excellent effects that the equipment jig cost can be reduced and the assembly process can be simplified are provided.

[Brief description of drawings]

FIG. 1 shows a structure of a main part of a thermoelectric conversion device according to a first embodiment of the present invention, (a) is a front sectional view, and (b) is a plan view when an insulating substrate is removed.

2A and 2B show a structure of a main part of a thermoelectric conversion device according to a second embodiment of the present invention, where FIG. 2A is a front view, FIG. 2B is a side view, and FIG. FIG.

FIG. 3 is a front sectional view taken along the line AA of FIG.

FIG. 4 shows a structure of a main part of a thermoelectric conversion device according to a third embodiment of the present invention, where (a) is a front view, (b) is a side view, and (c) is a case where an insulating substrate is removed. FIG.

5 is a front sectional view taken along the line AA of FIG. 4 (b).

6A and 6B show a structure of a main part of a thermoelectric conversion device according to a fourth embodiment of the present invention, where FIG. 6A is a front view, FIG. 6B is a side view, and FIG. FIG.

7 is a front sectional view taken along the line AA of FIG. 6 (b).

FIG. 8 shows an example in which a heat insulating material is arranged in a thermoelectric conversion device according to a second embodiment of the present invention, (a) is a front view,
(B) is a side view and (c) is a plan view without an insulating substrate.

9 is a front sectional view taken along the line AA of FIG. 8 (b).

FIG. 10 shows an example in which a positioning protrusion is provided on a conductive plate of a fourth embodiment of the present invention, (a) is a front view and (b) is a view.
Is a side view, and (c) is a plan view without an insulating substrate.

FIG. 11 is a side view showing an example in the case of soldering without providing a positioning protrusion on the conductive plate in relation to FIG.

12A and 12B show a structure of a main part of a conventional thermoelectric conversion device, FIG. 12A is a front sectional view, and FIG. 12B is a plan view when an insulating substrate is removed.

FIG. 13 is a schematic cross-sectional view showing the basic structure of a conventional thermoelectric conversion device.

[Explanation of symbols]

 1 Thermoelectric Converter 5a N-type Semiconductor Element 5b P-type Semiconductor Element 6, 6a, 6b, 6c, 6d Conductive Plate 6d 'Recess (Conductive Plate) 8, 8a, 8b, 8c Insulating Substrate 8a', 8b ', 8c' Convex Part (insulating substrate) 11 Heat absorption side 12 Heat dissipation side 13 Heat insulating material 14 Positioning protrusion

Claims (5)

[Claims] 1. A conductive plate is bonded to both end surfaces of at least a pair of an N-type semiconductor element and a P-type semiconductor element, and both outer surfaces thereof are made of an electrically insulating and thermally conductive material. In the thermoelectric conversion device configured to be sandwiched between insulating substrates, the elements are alternately electrically connected in series, and heat is absorbed on one side and heat is radiated on the other side. A thermoelectric conversion device, wherein the shape is expanded in the horizontal direction to expand the area. 2. A conductive plate is bonded to both end surfaces of at least a pair of an N-type semiconductor element and a P-type semiconductor element, and both outer surfaces thereof are made of an electrically insulating and thermally conductive material. In the thermoelectric conversion device configured to be sandwiched between insulating substrates, the elements are alternately electrically connected in series, and heat is absorbed on one side and heat is radiated on the other side. A thermoelectric conversion device, characterized in that the shape is formed in a U-shaped cross section or an L-shaped cross section, and a convex portion that fits in the shape of a conductive plate is formed on a surface of the insulating substrate facing the conductive plate. 3. A conductive plate is bonded to both end surfaces of at least a pair of an N-type semiconductor element and a P-type semiconductor element, and both outer surfaces thereof are made of an electrically insulating and thermally conductive material. In the thermoelectric conversion device configured to be sandwiched between insulating substrates, the elements are alternately electrically connected in series, and heat is absorbed on one side and heat is radiated on the other side. A thermoelectric conversion device, characterized in that the thermoelectric conversion device is formed in a box shape having a concave portion in the center, and a convex portion that fits into the concave portion of the conductive plate is formed on a surface of the insulating substrate facing the conductive plate. 4. A heat insulating material such as a foaming heat insulating material is arranged in the space between the heat absorbing side insulating substrate and the conductive plates adjacent to each other, and the space between the heat radiating side insulating substrate and the conductive plates adjacent to each other. The thermoelectric conversion device according to claim 1, 2 or 3, wherein the thermoelectric conversion device is provided. 5. A plurality of positioning protrusions are provided on a surface of the conductive plate so that both end surfaces of the N-type semiconductor element and the P-type semiconductor element are positioned at predetermined facing positions of the conductive plate. The thermoelectric conversion device according to claim 1, claim 2, or claim 3.