JP4795103B2 - Thermo module and manufacturing method thereof - Google Patents

Description

  The present invention relates to a thermomodule having a large number of thermoelectric elements arranged and capable of being manufactured at a low cost with a high heat-absorbing and radiating efficiency, and a manufacturing method thereof.

  A thermoelectric element is generally formed by connecting a p-type thermoelectric semiconductor element and an n-type thermoelectric semiconductor element in series with a metal electrode to form a pn junction pair. The thermoelectric element generates electric power by applying a current to the pn junction pair, thereby cooling one of the junctions and generating heat at the other junction and generating a temperature difference between the junction pairs. It is effective and is used as a cooling device or a power generation device.

  Usually, several tens to several hundreds of pn junction pairs are connected in series, and a metal electrode is sandwiched between two substrates provided on the surface, thereby being used as a thermoelectric element of an integral structure. .

  Here, it is most desirable that the p-type thermoelectric semiconductor elements (also referred to as elements) and the n-type thermoelectric semiconductor elements are alternately arranged along the vertical and horizontal directions. Thereby, elements that are generally rectangular parallelepipeds can be arranged with the highest density. Here, the density of element arrangement refers to the ratio of the sum of the bottom area of the element to the area of the thermoelectric element substrate.

  In addition, since the electrodes of the connection portion appear alternately on the high temperature side substrate and the low temperature side substrate, the wiring length by the electrodes can be minimized and the width can be maximized by arranging the elements as described above. The electrical resistance of the electrode is minimized. In addition, since the electrode pattern is the simplest, it is easy to perform soldering for connection between the element and the electrode, and there is an advantage that a short circuit due to a bridge between the adjacent electrodes hardly occurs.

Conventionally, the thermo-module 100, as shown in FIG. 11, between the heat-absorbing-side alumina substrate 110 and the heat radiating side alumina substrate 109, an array of a number of the p-type thermoelectric semiconductor elements 101 and the n-type thermoelectric semiconductor elements 102 alternately Electronic devices that generate heat absorption and heat dissipation by being arranged and electrically connected in series via electrodes 107 formed on the heat absorption side alumina substrate 110 and the heat dissipation side alumina substrate 109, respectively, and energized through these electrodes It is.

  The thermo module having such a structure has the following structural problems.

  Since the thermo module is fixed to the upper and lower alumina substrates, thermal stress is applied to the joint between the element and the electrode due to thermal deformation during operation, and cracks are generated. Due to such reliability problems, the size of the thermo module could not be increased.

  Since the thermoelectric semiconductor element and the electrode are exposed to the outside air, there is a problem that the thermoelectric semiconductor element corrodes due to dew condensation generated on the heat absorption side and the applied voltage.

  Examples of prior art for reducing or eliminating these problems include, for example, a method of sealing a substrate between a p-type thermoelectric semiconductor element and an n-type thermoelectric semiconductor element with silicon resin or the like, or rigid urethane foam A method of holding a thermoelectric semiconductor element with an electrically insulating material including a material (JP-A-8-018109, JP-A-12-124510) has been proposed.

  The material for holding the thermoelectric semiconductor element is required to have heat insulation, low moisture permeability, and heat resistance to lead-free soldering used when assembling the thermo module.

Further, a thermo module using an insulating plate member is disclosed in Japanese Patent Application Laid-Open No. 11-298053.
JP-A-8-018109 JP-A-12-124510 Japanese Patent Laid-Open No. 11-298053

  In the prior art described above (Japanese Patent Laid-Open Nos. 8-018109 and 12-124510), the thermal conductivity of the insulating material itself holding the thermoelectric semiconductor element is an important factor in increasing the heat absorption and heat dissipation efficiency of the thermomodule. Become. When the thermal conductivity of the insulating material is large, heat conduction is performed through the insulating material, so that the temperature difference between the heat absorption side and the heat radiation side of the thermo module becomes small.

  In addition, as the thermoelectric semiconductor element absorbs heat (temperature decrease), moisture in the atmosphere is condensed on the surface of the element, and there is a problem that the material constituting the thermoelectric semiconductor element is corroded by the applied voltage. As a countermeasure, a thermoelectric semiconductor element is coated so that it does not come into direct contact with moisture. Alternatively, the thermoelectric semiconductor element needs to have a sealed structure.

  Furthermore, as a thermomodule structure, a heat sink is joined to each of the heat absorption side and the heat dissipation side. In order to efficiently transfer the heat of the thermoelectric element to the heat sink, it is necessary to solder the thermoelectric element and the heat sink directly or via an electrode pad. In recent years, since lead-free solder containing no harmful lead is used, the soldering temperature is increased to 230 ° C. or higher, and the material constituting the electronic cooling module is required to have heat resistance that can withstand lead-free soldering.

  Further, according to the above-described prior art (Japanese Patent Laid-Open No. 11-298053), the thermoelectric semiconductor element is disposed in the guide hole provided in the plate member of the insulator, and the thermoelectric semiconductor element and the electrode are electrically conductive such as solder. Bonded by welding with a conductive material. That is, the provision of the guide hole prevents molten solder from leaking and forming a solder bridge. However, molten solder or the like penetrates into the guide hole by the capillary phenomenon and adheres around the thermoelectric semiconductor element, thereby degrading the function of the thermoelectric semiconductor element. Furthermore, since the electrode and the insulating plate-like member are in direct contact with each other, there is a problem that stress is generated by the heat of the electrode and the thermoelectric semiconductor element or element metal layer is destroyed.

  The present invention has been made in view of the above-described conventional problems, and provides a thermo module that has high heat absorption and dissipation efficiency, avoids damage to the module due to dew condensation, and supports a lead-free soldering process at low cost. For the purpose.

    The inventor has intensively studied to solve the above-described problems. As a result, (a) a resin base material excellent in heat resistance and insulation is used as the base material, and (b) a plurality of pairs of p-type and n-type thermoelectric semiconductor elements arranged alternately are inserted. A hole to be formed in the resin substrate, (c) the element is inserted into the hole with a heat insulating layer provided between the thermoelectric semiconductor element and the hole, and (d) center portions of both ends of the thermoelectric semiconductor element A resin layer is disposed so as to cover the entire surface except for the opening of (1), and (e) the opening portion is filled with a bonding member, and the electric circuit metal layer is disposed on the resin layer via the bonding layer so as to close the opening. By forming a thermo module having a structure in which the p-type and n-type thermoelectric semiconductor elements are sealed by the resin base material, the resin layer, and the electric circuit metal layer through the heat insulating layer, the heat absorption and radiation efficiency is improved. High, avoids module damage due to condensation and leads to lead-free soldering It has been found that can provide a thermo-module corresponding to Seth at low cost.

  The present invention is based on the above-described research results.

According to a first aspect of the thermomodule of the present invention, a plurality of pairs of p-type and n-type thermoelectric semiconductor elements arranged in a predetermined form are formed corresponding to the thermoelectric semiconductor elements, and the thermoelectric semiconductor elements are inserted. A resin base material having a plurality of holes, a heat-insulating layer having a sealed structure formed between the thermoelectric semiconductor element and the holes, and both end portions in the thickness direction of the resin base material, Except at least a part of both ends of the thermoelectric semiconductor element, a resin layer arranged to cover the entire surface, and a plurality of pairs of p-type and n-type thermoelectric semiconductor elements arranged outside each of the resin layers, comprising an electric circuit metal layer are electrically connected in series via a junction layer formed thereon, the thickness of the resin base material, the height substantially of the p-type and n-type thermoelectric semiconductor elements The sides are surrounded by the heat insulating layer Further, the thermoelectric semiconductor element is a thermomodule that is sealed by the resin base material via the heat insulating layer, the resin layer, and the electric circuit metal layer via the bonding layer. .

According to a second aspect of the thermomodule of the present invention, in the first aspect of the thermomodule of the present invention described above, the thermoelectric module has element metal layers formed on the entire surface of both end portions thereof.

According to a third aspect of the thermo module of the present invention, in the second aspect of the thermo module of the present invention described above, the heat insulating layer includes the wall surface forming the hole portion of the resin base material and the element metal layer. It is a thermomodule that is hermetically sealed by a side surface of a thermoelectric semiconductor element and an inner side surface of the resin layer.

A fourth aspect of the thermo module of the present invention is the thermo module according to the first aspect of the thermo module of the present invention described above, in which element metal layers are respectively formed at the center portions of both ends of the thermoelectric semiconductor element. .

According to a fifth aspect of the thermo module of the present invention, in the fourth aspect of the thermo module of the present invention described above, the heat insulating layer forms a wall surface forming the hole of the resin base material, a side surface of the thermoelectric semiconductor element, And a thermomodule that is hermetically sealed by the inner surface of the resin layer.

According to a sixth aspect of the thermomodule of the present invention, in any one of the first to fifth aspects of the thermomodule of the present invention described above, the bonding layer is filled in the central portion at both ends of the thermoelectric semiconductor element. It is a thermo module formed.

According to a seventh aspect of the thermo module of the present invention, there is provided a flat bottom surface portion and a bottom surface portion in which the electric circuit metal layer forms an electric circuit in any one of the first to sixth aspects of the thermo module of the present invention described above. It is a thermo module that consists of heat dissipating fins that are vertical and parallel to each other.

In the first aspect of the thermomodule manufacturing method of the present invention, a resin substrate having a predetermined shape is prepared,
Providing the resin base material with holes into which a plurality of pairs of p-type and n-type thermoelectric semiconductor elements arranged alternately are inserted,
Affixing a resin layer on one surface of the resin base material,
Inserting the thermoelectric semiconductor element, in which element metal layers are formed at both ends in the thickness direction , into the hole so that a heat insulating layer is formed around the side surface of the thermoelectric semiconductor element,
Affixing a resin layer on the other surface of the resin base material,
Forming an opening in at least a portion of the resin layer corresponding to the element metal layer of the thermoelectric semiconductor element;
Supplying a bonding material to the opening to form a bonding layer;
It is a manufacturing method of a thermo module in which an electric circuit metal layer is bonded to the bonding layer to manufacture a thermo module.

According to a second aspect of the thermomodule manufacturing method of the present invention, a resin base material having a predetermined shape is prepared,
Providing the resin base material with holes into which a plurality of pairs of p-type and n-type thermoelectric semiconductor elements arranged alternately are inserted,
Affixing a resin layer on one surface of the resin base material,
The way the heat insulating layer around a side surface of the thermoelectric semiconductor elements are formed, a pre Kinetsuden semiconductor device, is inserted into the hole,
Affixing a resin layer on the other surface of the resin base material,
Forming an opening in a portion of the resin layer corresponding to a central portion of both end portions in the thickness direction of the thermoelectric semiconductor element;
Forming a device metal layer on the thermoelectric semiconductor elements and thus exposed to the opening,
Supplying a bonding material to the space above the element metal layer formed in the opening to form a bonding layer;
It is a manufacturing method of a thermo module in which an electric circuit metal layer is bonded to the bonding layer to manufacture a thermo module.

    According to the thermo module of the present invention, since an inexpensive resin base material is used as compared with a substrate using ceramic, the thermo module can be manufactured at low cost. Further, since the periphery of the thermoelectric semiconductor element is a sealed air layer or a heat insulating layer made of a foamed resin layer, it is possible to prevent the occurrence of condensation due to the use environment and use conditions, and to prevent the thermoelectric semiconductor element from being damaged. I can do it. In addition, deterioration of performance due to oxidation can be prevented. Furthermore, by using a resin base material with excellent heat resistance and insulation as the base material, heat resistance in the assembly process of the module using lead-free solder can be provided, and the thermal resistance of the thermo module is minimized. can do.

  The present invention will be described below with reference to embodiments shown in the drawings.

  One aspect of the thermomodule of the present invention includes a plurality of pairs of p-type and n-type thermoelectric semiconductor elements arranged in a predetermined form, and a plurality of thermoelectric semiconductor elements that are formed corresponding to the thermoelectric semiconductor elements. Cover the entire surface of the resin base material provided with the hole, the heat insulating layer formed between the thermoelectric semiconductor element and the hole, and cover both ends of the resin base material except for the central part of both ends of the thermoelectric semiconductor element. And a plurality of pairs of p-type and n-type thermoelectric semiconductor elements are electrically connected in series via a bonding layer formed thereon. A thermo module comprising an electric circuit metal layer.

  In this embodiment, element metal layers are formed on the entire surface of both ends of the thermoelectric semiconductor element. The heat insulating layer is hermetically sealed by the wall surface forming the hole of the resin base material, the side surface of the thermoelectric semiconductor element including the element metal layer, and the inner side surface of the resin layer.

  FIG. 1A is a partial cross-sectional view illustrating a thermomodule according to one embodiment of the present invention. FIG.1 (b) is an enlarged view of the A section of Fig.1 (a). FIG. 1A shows a state where an electric circuit layer (including a bonding layer) is not formed. As shown in FIG. 1A, a plurality of pairs of p-type and n-type thermoelectric semiconductor elements 1 are inserted into through-hole portions 10 formed in the resin base material 2, respectively. A heat insulating layer 4 is formed between the thermoelectric semiconductor element 1 and the hole 10 of the resin base material 2. That is, the heat insulating layer 4 is formed so as to cover the four circumferences of the thermoelectric semiconductor element 1. In this embodiment, element metal layers 5 are formed in advance on both upper and lower ends of the thermoelectric semiconductor element 1. Thus, the thermoelectric semiconductor element 1 in which the element metal layer 5 is formed at both the upper and lower ends is inserted into the hole 10 described above, and the heat insulation layer 4 covers the four circumferences. Resin layers 3 are formed on the entire upper and lower surfaces of the resin substrate 2 except for the central portion of the thermoelectric semiconductor element 1.

  The details will be described with reference to FIG. As shown in FIG. 1 (b), a thermoelectric semiconductor element 1 having an element metal layer 5 formed at an end portion is disposed in a hole 10 formed through a resin base material 2, and the thermoelectric semiconductor element has four rounds. A heat insulating layer 4 is formed on the surface. The resin layer 3 is formed over the entire surface except for the opening 9 at the center of the element metal layer 5. That is, since the resin layer 3 is disposed so as to cover the peripheral portion of the element metal layer 5, the heat insulating layer 4 is the resin layer 3, the wall surface of the hole 10 of the resin base material 2, the side wall surface of the thermoelectric semiconductor element, the element It is completely sealed by the side wall surface of the metal layer. Thus, the thermoelectric semiconductor element is completely sealed and is not exposed to the outside air. Therefore, condensation can be prevented.

  The resin layer described above may be provided with the opening 9 using, for example, a thermosetting bonding film. The bonding layer and the electric circuit metal layer will be described later with reference to another drawing.

  In another aspect, element metal layers are respectively formed at the center of both end portions of the thermoelectric semiconductor element. The heat insulating layer is hermetically sealed by the wall surface forming the hole of the resin base material, the side surface of the thermoelectric semiconductor element, and the inner side surface of the resin layer.

  FIG. 2A is a partial cross-sectional view illustrating a thermo module according to another embodiment of the present invention. FIG. 2B is an enlarged view of the A ′ portion of FIG. Similarly, FIG. 2A shows a state where an electric circuit layer (including a bonding layer) is not formed. As shown in FIG. 2A, a plurality of pairs of p-type and n-type thermoelectric semiconductor elements 1 are inserted into the through-hole portions 10 formed in the resin base material 2. A heat insulating layer 4 is formed between the thermoelectric semiconductor element 1 and the hole 10 of the resin base material 2. That is, the heat insulating layer 4 is formed so as to cover the four circumferences of the thermoelectric semiconductor element 1. In this embodiment, the element metal layer 5 is not formed in advance on the upper and lower ends of the thermoelectric semiconductor element 1. The thermoelectric semiconductor element 1 in a state where the element metal layers are not formed on the upper and lower ends is inserted into the hole 10 described above, and the heat insulating layer 4 covers the four circumferences. Resin layers 3 are formed on the entire upper and lower surfaces of the resin substrate 2 except for the central portion of the thermoelectric semiconductor element 1.

  The details will be described with reference to FIG. As described above, in this aspect, the element metal layers are not formed in advance on the upper and lower ends of the thermoelectric semiconductor element. As shown in FIG. 2B, the thermoelectric semiconductor element 1 is disposed in the hole 10 formed through the resin base material 2, and the heat insulating layer 4 is formed on the four circumferences of the thermoelectric semiconductor element. Resin layer 3 is formed over the entire surface except for opening 9 at the center of the end of thermoelectric semiconductor element 1. In this way, the element metal layer 5 is formed at the end of the thermoelectric semiconductor element exposed to the opening, with the resin layer formed with the opening so as to cover the periphery of the thermoelectric semiconductor element. That is, since the resin layer 3 is disposed with an opening so as to cover the peripheral portion of the thermoelectric semiconductor element 1 and the element metal layer is formed in the opening, the heat insulating layer 4 is the resin layer 3 and the resin base material 2. Are completely sealed by the wall surface of the hole 10 and the side wall surface of the thermoelectric semiconductor element. Thus, the thermoelectric semiconductor element is completely sealed and is not exposed to the outside air. Therefore, condensation can be prevented.

  FIG. 3 is a partial top view for explaining the thermo module of the present invention. FIG. 3 is a view seen from above in a state where the electric circuit metal layer described with reference to FIGS. 1 and 2 is not formed. That is, each of the thermoelectric semiconductor elements is disposed in the hole portion of the resin base material, and the resin layer is formed on the entire surface except for the central portion of the thermoelectric semiconductor element. As shown in FIG. 3, the element metal layer 5 formed at the end of the thermoelectric semiconductor element appears in the opening 9 of the resin layer 3. In the thermoelectric semiconductor element, p-type and n-type thermoelectric semiconductor elements are alternately arranged. As described above, all of the plural pairs of p-type and n-type thermoelectric semiconductor elements are completely sealed by the resin layer and the element metal layer of the opening.

  FIG. 4 is a partial cross-sectional view for explaining the thermo module of the present invention. FIG. 4 is a cross-sectional view of the thermoelectric semiconductor element of the thermomodule of the present invention described with reference to FIGS. That is, a cross section cut along a plane parallel to the upper and lower surfaces of the thermomodule is shown. As shown in FIG. 4, the thermoelectric semiconductor element 1 is disposed in the hole 10 of the resin base material 2 with the heat insulating layer 4 provided around the circumference. As described with reference to FIGS. 1 and 2, the heat insulating layer 4 is completely sealed by the resin base material, the resin layer, and the thermoelectric semiconductor element (including the element metal layer).

  FIG. 5 is a cross-sectional view illustrating a thermomodule according to one embodiment of the present invention. The thermo module shown in FIG. 5 corresponds to the thermo module partially described with reference to FIG. That is, a plurality of pairs of p-type and n-type thermoelectric semiconductor elements 1 are inserted into the through-hole portions 10 formed in the resin base material 2. A heat insulating layer 4 is formed between the thermoelectric semiconductor element 1 and the hole 10 of the resin base material 2 so as to cover the four circumferences of the thermoelectric semiconductor element 1. The thermoelectric semiconductor element 1 in which the element metal layer 5 is formed at both upper and lower ends is inserted into the hole 10 described above, and the heat insulation layer 4 covers the four circumferences. Resin layers 3 are formed on the entire upper and lower surfaces of the resin substrate 2 except for the central portion of the thermoelectric semiconductor element 1.

  Thus, in a state where the thermoelectric semiconductor element is hermetically sealed with a heat insulating layer around it, the bonding layer 6 is formed in the concave portion formed by the central portion of the element metal layer 5 and the opening 9 of the resin layer. The electric circuit metal layer 7 is formed so that a plurality of pairs of p-type and n-type thermoelectric semiconductor elements are electrically connected in series via In this manner, the thermoelectric semiconductor element is disposed in the hole of the resin base material via the heat insulating layer, and is sealed in a sandwich shape by the electric circuit metal layer via the resin layer and the bonding layer, thereby forming a thermo module.

  FIG. 6 is a cross-sectional view illustrating a thermomodule according to one embodiment of the present invention. The thermo module shown in FIG. 6 corresponds to the thermo module partially described with reference to FIG. That is, a plurality of pairs of p-type and n-type thermoelectric semiconductor elements 1 are inserted into the through-hole portions 10 formed in the resin base material 2. A heat insulating layer 4 is formed between the thermoelectric semiconductor element 1 and the hole 10 of the resin base material 2 so as to cover the four circumferences of the thermoelectric semiconductor element 1. In this embodiment, the element metal layer 5 is not formed in advance on the upper and lower ends of the thermoelectric semiconductor element 1. The thermoelectric semiconductor element 1 in a state where the element metal layers are not formed on the upper and lower ends is inserted into the hole 10 described above, and the heat insulating layer 4 covers the four circumferences. Resin layers 3 are formed on the entire upper and lower surfaces of the resin substrate 2 except for the central portion of the thermoelectric semiconductor element 1.

  Thus, in a state where the thermoelectric semiconductor element is hermetically sealed with a heat insulating layer around it, the bonding layer 6 is formed in the recess formed by one surface of the element metal layer 5 and the opening 9 of the resin layer. The electric circuit metal layer 7 is formed so that a plurality of pairs of p-type and n-type thermoelectric semiconductor elements are electrically connected in series via the layers. In this manner, the thermoelectric semiconductor element is disposed in the hole of the resin base material via the heat insulating layer, and is sealed in a sandwich shape by the electric circuit metal layer via the resin layer and the bonding layer, thereby forming a thermo module.

  In any of the above-described cases, each of the thermoelectric semiconductor elements is surrounded by a heat insulating layer on all four sides and is completely sealed by the resin base material, the resin layer, the element metal layer, and the bonding layer. The resin base material is excellent in heat resistance and insulation. The resin layer connecting the thermoelectric semiconductor element and the resin base material has a stress relaxation function.

  In one aspect of the present invention, the electric circuit metal layer described above is composed of a flat bottom surface portion that forms an electric circuit and a heat dissipating fin disposed perpendicular to and parallel to the bottom surface portion.

  FIG. 7 is a cross-sectional view illustrating a thermo module according to one aspect of the present invention. The thermo module shown in FIG. 7 corresponds to the thermo module described with reference to FIGS. 1 and 5. That is, in a state where the thermoelectric semiconductor element is hermetically sealed with a heat insulating layer around the thermoelectric semiconductor element, the bonding layer 6 is formed in the concave portion formed by the central portion of the element metal layer 5 and the opening 9 of the resin layer. Thus, the electric circuit metal layer 8 is formed so that a plurality of pairs of p-type and n-type thermoelectric semiconductor elements are electrically connected in series. The electric circuit layer 8 is composed of a flat bottom surface portion that forms an electric circuit and heat dissipating fins arranged perpendicular to the bottom surface portion and parallel to each other.

  FIG. 8 is a cross-sectional view illustrating a thermo module according to one aspect of the present invention. The thermo module shown in FIG. 8 corresponds to the thermo module described with reference to FIGS. 2 and 6. That is, in a state where the thermoelectric semiconductor element is hermetically sealed with a heat insulating layer around the thermoelectric semiconductor element, the bonding layer 6 is formed in the recess formed by one surface of the element metal layer 5 and the opening 9 of the resin layer. The electric circuit metal layer 8 is formed so that a plurality of pairs of p-type and n-type thermoelectric semiconductor elements are electrically connected in series via the. The electric circuit layer 8 is composed of a flat bottom surface portion that forms an electric circuit and heat dissipating fins arranged perpendicular to the bottom surface portion and parallel to each other.

  The thermo-module of this aspect can be used as a heat exchanger with one side supplying hot air and the other supplying cold air.

  FIG. 9 is an exploded view of a thermo module according to one embodiment of the present invention. The thermo module shown in FIG. 9 corresponds to the thermo module described with reference to FIG. As shown in FIG. 9, the resin base material 2 having a through-hole portion 10 into which a plurality of pairs of p-type and n-type thermoelectric semiconductor elements 1 are inserted and arranged is centered, and the thermoelectric semiconductor elements are formed on both side surfaces thereof. A resin layer 3 having an opening 9 having an area smaller than the cross-sectional area, and an electric circuit metal layer 8 to which p-type and n-type thermoelectric semiconductor elements are electrically connected in series are arranged. As described above, in the thermomodule of the present invention, each of the thermoelectric semiconductor elements is surrounded by the heat insulating layer on the four sides and is completely sealed by the resin base material, the resin layer, the element metal layer, and the bonding layer.

  Next, a method for manufacturing a thermo module will be described.

  One aspect of the method for manufacturing a thermomodule according to the present invention is to prepare a resin base material having a predetermined shape and insert a plurality of pairs of p-type and n-type thermoelectric semiconductor elements that are alternately arranged adjacent to each other. The element metal layer is formed on both ends of the hole so that a heat insulating layer is formed around the side surface of the thermoelectric semiconductor element. The thermoelectric semiconductor element is inserted, a resin layer is attached to the other surface of the resin base material, an opening is formed in the resin layer corresponding to the center of the element metal layer of the thermoelectric semiconductor element, and the opening is bonded to the opening. This is a method for manufacturing a thermo module, in which a material is supplied to form a bonding layer, and an electric circuit metal layer is bonded to the bonding layer to manufacture a thermo module.

  FIG. 10 is a diagram showing an example of a method for manufacturing the thermomodule of the present invention. As shown to Fig.10 (a), the resin base material excellent in heat resistance and insulation is prepared. Next, as shown in FIG. 10B, through-hole portions into which a plurality of pairs of p-type and n-type thermoelectric semiconductor elements arranged alternately are inserted are formed in the resin base material. Next, as shown in FIG. 10C, a resin layer is formed over the entire surface of one surface (the lower surface in the drawing) of the resin base material in which the holes are formed.

  Next, as shown in FIG. 10D, the heat transfer semiconductor elements having element metal layers formed on both upper and lower surfaces are inserted and arranged in the holes so that the heat insulating layers are formed on the four sides. Next, as shown in FIG. 10E, a resin layer is formed over the entire surface of the other surface (the upper surface in the drawing) of the resin base material with the thermoelectric semiconductor element inserted in the hole. Next, as shown in FIG. 10 (f), the central portion of the thermoelectric semiconductor is exposed at a position corresponding to the thermoelectric semiconductor element of the resin layer formed on both surfaces of the resin base (formed on the thermoelectric semiconductor element). The opening is formed so that the element metal layer is exposed.

  Next, as shown in FIG. 10G, a bonding member is formed by filling a bonding member into a recess formed by the opening of the resin layer and the surface of the element metal layer. Next, as shown in FIG. 10H, an electric circuit metal layer is formed on the resin layer via the bonding layer. In this way, the thermo module is manufactured.

  As described above, the thickness of the resin base material 2 is substantially the same as the height of the p-type and n-type thermoelectric semiconductor elements 1, and the p-type and n-type thermoelectric semiconductor elements 1 are sealed by the resin base material and the resin layer. It has a structured. The resin base material is preferably a material excellent in heat resistance and insulation. Among them, the lower the thermal conductivity, the better the performance. For example, a resin base material having a thermal conductivity at 60 ° C. of 0.05 to 0.6 W / mk is preferable. In addition, when rigidity is expected, a material having excellent heat resistance and insulation can be selected from resin base materials that can obtain desired rigidity.

  Examples of resin substrates include glass epoxy, PET (polyethylene terephthalate), PPS (polyphenylene sulfide), PEI (polyetherimide), PEEK (polyetheretherketone), PBI, PFA, PI (polyimide), LCP (liquid crystal polymer) ) Or SPS (syndiotactic polystyrene).

  The heat insulating layer formed between the wall surface of the hole of the resin base material and the p-type and n-type thermoelectric semiconductor elements inserted therein is made of air, an inert gas, or a foamed resin. The thickness of the heat insulating layer, that is, the distance between the thermoelectric semiconductor element and the wall surface of the hole of the resin base material is preferably in the range of 0.005 mm to 0.5 mm. From the restriction of the processed surface, 0.005 mm or more is preferable. If the thickness of the heat insulating layer exceeds 0.5 mm, the filling factor of the element is lowered, which is not preferable.

  The resin layer is composed of a photosensitive cover lay having heat resistance, a thermoplastic film, or a film with an adhesive. The thickness of the resin layer is preferably in the range of 0.0125 mm to 0.1 mm where it can be expected to relax the thermal stress during operation of the thermomodule.

  The bonding layer is made of, for example, a SnBi solder layer. When the electric circuit metal layer is made of Cu foil, the solid layer diffusion of Sn existing at the contact interface between the bonding layer and the electric circuit metal layer should be used. Can do.

  The electric circuit metal layer can have any shape and arrangement according to the application. For example, when used as a heat exchanger, a fin-shaped electrode or an electrode obtained by joining and integrating a fin and an electrode can be used, and the thermal resistance can be reduced. Furthermore, the heat history to the thermoelectric semiconductor element can be minimized, and the reliability is improved.

    According to the present invention, since the p-type and n-type thermoelectric semiconductor elements are held on the resin base material having excellent heat resistance and low thermal conductivity, the heat conduction between the heat absorption side and the heat dissipation side can be reduced. The heat absorption and heat dissipation efficiency as a module can be improved, and the thermoelectric semiconductor element inserted in the hole is covered with a heat insulating layer on all four sides and sealed by an electric circuit metal layer through a resin base material, resin layer, and bonding layer Since the structure is provided, the thermoelectric semiconductor element can be prevented from being damaged without causing dew condensation in the heat absorbing portion, and industrial applicability is great.

FIG. 1A is a partial cross-sectional view illustrating a thermomodule according to one embodiment of the present invention. FIG.1 (b) is an enlarged view of the A section of Fig.1 (a). FIG. 2A is a partial cross-sectional view illustrating a thermo module according to another embodiment of the present invention. FIG. 2B is an enlarged view of the A ′ portion of FIG. FIG. 3 is a partial top view for explaining the thermo module of the present invention. FIG. 4 is a partial cross-sectional view for explaining the thermo module of the present invention. FIG. 5 is a cross-sectional view illustrating a thermomodule according to one embodiment of the present invention. It is a partial top view explaining the thermo module of this invention. FIG. 6 is a cross-sectional view illustrating a thermomodule according to one embodiment of the present invention. FIG. 7 is a cross-sectional view illustrating a thermo module according to one aspect of the present invention. FIG. 8 is a cross-sectional view illustrating a thermo module according to one aspect of the present invention. FIG. 9 is an exploded view of a thermo module according to one embodiment of the present invention. FIG. 10 is a diagram showing an example of a method for manufacturing the thermomodule of the present invention. FIG. 11 is a cross-sectional view illustrating a conventional thermo module.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Thermoelectric semiconductor element 2 Resin base material 3 Resin layer 4 Heat insulation layer 5 Element metal layer 6 Bonding layer 7 Electric circuit metal layer 8 Fin-integrated electric circuit metal layer 9 Opening 10 Hole

Claims (9)

A plurality of pairs of p-type and n-type thermoelectric semiconductor elements arranged in a predetermined form;
A resin base material formed corresponding to the thermoelectric semiconductor element and provided with a plurality of holes into which the thermoelectric semiconductor element is inserted;
A heat-insulating layer having a sealed structure formed between the thermoelectric semiconductor element and the hole;
Resin layers arranged to cover the entire surface, excluding at least a part of both end portions of the thermoelectric semiconductor element at both end portions in the thickness direction of the resin base material,
Are arranged on each of the outside of the resin layer, and the electric circuit metal layer are electrically connected in series via a bonding layer in which the plurality of pairs of p-type and n-type thermoelectric semiconductor elements are formed thereon,
Equipped with a,
The thickness of the resin substrate is substantially the same as the height of the p-type and n-type thermoelectric semiconductor elements,
The thermoelectric semiconductor element whose side surface is surrounded by the heat insulating layer is sealed by the resin base material through the heat insulating layer, the resin layer, and the electric circuit metal layer through the bonding layer. Thermo module characterized by   The thermomodule according to claim 1, wherein element metal layers are respectively formed on the entire surface of both end portions of the thermoelectric semiconductor element.   The heat insulating layer is formed to be sealed by a wall surface forming the hole portion of the resin base material, a side surface of the thermoelectric semiconductor element including the element metal layer, and an inner side surface of the resin layer. Thermo module as described in.   The thermomodule according to claim 1, wherein element metal layers are respectively formed at center portions of both end portions of the thermoelectric semiconductor element.   The thermo module according to claim 4, wherein the heat insulating layer is hermetically sealed with a wall surface forming the hole of the resin base material, a side surface of the thermoelectric semiconductor element, and an inner side surface of the resin layer.   The thermomodule according to any one of claims 1 to 5, wherein the thermoelectric semiconductor element is formed by filling the center portion at both ends of the thermoelectric semiconductor element with the bonding layer. The thermo module according to any one of claims 1 to 6, wherein the electric circuit metal layer includes a flat bottom surface portion that forms an electric circuit, and heat dissipating fins arranged perpendicular to and parallel to each other. . Prepare a resin substrate of a predetermined shape,
Providing the resin base material with holes into which a plurality of pairs of p-type and n-type thermoelectric semiconductor elements arranged alternately are inserted,
Affixing a resin layer on one surface of the resin base material,
Inserting the thermoelectric semiconductor element, in which element metal layers are formed at both ends in the thickness direction, into the hole so that a heat insulating layer is formed around the side surface of the thermoelectric semiconductor element,
Affixing a resin layer on the other surface of the resin base material,
Forming an opening in at least a portion of the resin layer corresponding to the element metal layer of the thermoelectric semiconductor element;
Supplying a bonding material to the opening to form a bonding layer;
A method for manufacturing a thermo module, wherein an electric circuit metal layer is bonded to the bonding layer to manufacture a thermo module . Prepare a resin substrate of a predetermined shape,
Providing the resin base material with holes into which a plurality of pairs of p-type and n-type thermoelectric semiconductor elements arranged alternately are inserted,
Affixing a resin layer on one surface of the resin base material,
The way the heat insulating layer around a side surface of the thermoelectric semiconductor elements are formed, a pre Kinetsuden semiconductor device, is inserted into the hole,
Affixing a resin layer on the other surface of the resin base material,
The opening is formed in parts of the said resin layer corresponding to the central portion of both ends in the thickness direction of the thermoelectric semiconductor element,
Forming an element metal layer on the thermoelectric semiconductor element exposed by the opening;
Supplying the bonding material to the space above the element metal layer Oite formed in the opening to form a bonding layer,
A method for manufacturing a thermo module, wherein an electric circuit metal layer is bonded to the bonding layer to manufacture a thermo module.

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