JP4913617B2 - Thermo module and manufacturing method thereof - Google Patents

Description

  The present invention relates to a thermomodule in which a large number of thermoelectric elements are arranged and a method for manufacturing the same, which can prevent the thermoelectric semiconductor elements from being damaged by vibration or the like.

  A thermoelectric element is generally formed by connecting a p-type thermoelectric semiconductor element and an n-type thermoelectric semiconductor element in series with a metal electrode to form a pn junction pair. The thermoelectric element generates electric power by applying a current to the pn junction pair, thereby cooling one of the junctions and generating heat at the other junction and generating a temperature difference between the junction pairs. It is effective and is used as a cooling device or a power generation device.

  Usually, several tens to several hundreds of pn junction pairs are connected in series, and a metal electrode is sandwiched between two substrates provided on the surface, thereby being used as a thermoelectric element of an integral structure. .

  It is most desirable that the p-type thermoelectric semiconductor elements (also referred to as elements) and the n-type thermoelectric semiconductor elements are alternately arranged along the vertical and horizontal directions. Thereby, elements that are generally rectangular parallelepipeds can be arranged with the highest density. Here, the density of element arrangement refers to the ratio of the sum of the bottom area of the element to the area of the thermoelectric element substrate.

  In addition, since the electrodes of the connection portion appear alternately on the high temperature side substrate and the low temperature side substrate, the wiring length by the electrodes can be minimized and the width can be maximized by arranging the elements as described above. The electrical resistance of the electrode is minimized. In addition, since the electrode pattern is the simplest, it is easy to perform soldering for connection between the element and the electrode, and there is an advantage that a short circuit due to a bridge between the adjacent electrodes hardly occurs.

  Conventionally, as shown in FIG. 11, the thermomodule 100 has a large number of p-type thermoelectric semiconductor elements 101 and n-type thermoelectric semiconductor elements 102 arranged alternately between a heat absorption side alumina substrate 110 and a heat dissipation side alumina substrate 109. An electronic device that generates heat absorption and heat dissipation by electrically connecting in series through electrodes 107 formed on the heat absorption side alumina substrate 110 and the heat dissipation side alumina substrate 109, respectively, and energizing through these electrodes. is there.

  Furthermore, a method of sealing a substrate between a p-type thermoelectric semiconductor element and an n-type thermoelectric semiconductor element with a silicon resin or the like, and a method of holding a thermoelectric semiconductor element with an electrically insulating material including a hard urethane foam material (Japanese Patent Laid-Open No. Hei. No. 8-018109 and JP-A-12-124510) have been proposed.

Further, a thermo module using an insulating plate member is disclosed in Japanese Patent Application Laid-Open No. 11-298053. Furthermore, Japanese Patent Application Laid-Open No. 11-298053 discloses the use of a finned electrode as an electrode.
JP-A-8-018109 JP-A-12-124510 Japanese Patent Laid-Open No. 11-298053 JP 2003-8087 A

In the above-described prior art (Japanese Patent Laid-Open No. 11-298053), a finned electrode formed from an electrode body and fins integrally connected to the left and right of the electrode body is joined to a thermoelectric semiconductor element via a joining layer. Yes. That is, the thermoelectric semiconductor element is disposed in a guide hole provided in the plate member of the insulator, and the thermoelectric semiconductor element and the electrode body of the finned electrode are joined by welding with a conductive material such as solder.
In general, heat dissipation fins are larger in size than thermoelectric semiconductor elements, and the force applied to the heat dissipation fins is easily transmitted directly to the thermoelectric semiconductor elements, and the thermoelectric semiconductor elements are mechanically fragile. When an external force is applied to the fin or an external force is applied to the heat radiating fin due to vibration, there is a problem that the thermoelectric semiconductor element easily breaks in the vicinity of the junction between the thermoelectric semiconductor element and the electrode body.

  The present invention has been made in view of the above-described conventional problems, and an object thereof is to provide a thermomodule in which a large number of thermoelectric semiconductor elements are arranged so that the thermoelectric semiconductor elements are not broken by vibration or the like.

  The inventor has intensively studied to solve the above-described problems. As a result, a reinforcing material is provided at the peripheral portion of the hole portion in which a plurality of pairs of p-type and n-type thermoelectric semiconductor elements are inserted, which is provided on a resin base material having excellent heat resistance and insulation properties used as a base material. By providing the metal layer, the metal layer and the flat bottom surface part that forms the electric circuit are firmly joined, and even if external force such as vibration is applied to the radiating fins arranged perpendicular to the bottom surface part and mutually closed It has been found that since no force is directly applied to the thermoelectric semiconductor element, breakage of the thermoelectric semiconductor element can be reliably prevented.

The present invention is based on the above-described research results.
A first aspect of the thermo module of the present invention includes a plurality of pairs of p-type and n-type thermoelectric semiconductor elements arranged in a predetermined form,
A resin base material formed corresponding to the thermoelectric semiconductor element and provided with a plurality of holes into which the entire thermoelectric semiconductor element is inserted;
A metal layer formed on at least a part of the periphery of the hole at both ends in the thickness direction of the resin substrate;
And a heat radiation fin and Tona Ru electric circuit connecting member disposed in parallel with bottom and bottom surface perpendicular to an electrical circuit,
The plurality of pairs of p-type and n-type thermoelectric semiconductor elements are electrically connected in series by a bottom surface portion of the electric circuit connecting member via a first bonding material formed thereon, and the electric circuit The bottom surface portion of the connecting member is fixed to the metal layer via a second bonding material formed separately from the first bonding material ,
The metal layer is a thermo module having a portion protruding from a side surface of the electric circuit connecting member in plan view .

A second aspect of the thermo module of the present invention includes a plurality of pairs of p-type and n-type thermoelectric semiconductor elements arranged in a predetermined form,
A resin base material formed corresponding to the thermoelectric semiconductor element and provided with a plurality of holes into which the entire thermoelectric semiconductor element is inserted;
A metal layer formed on at least a part of the periphery of the hole at both ends in the thickness direction of the resin substrate;
A bottom surface part forming an electric circuit, a first vertical part perpendicular to the bottom surface part and arranged parallel to each other; a second vertical part arranged parallel to each other outside the first vertical part; and a first vertical portion and a second heat radiating fins and Tona Ru electric circuit connecting member M-shaped comprising a top part of the vertical portion and a top surface respectively connecting,
The plurality of pairs of p-type and n-type thermoelectric semiconductor elements are electrically connected in series by a bottom surface portion of the electric circuit connecting member via a first bonding material formed thereon, and the electric circuit A second vertical portion of the connection member is fixed to the metal layer via a second bonding material formed separately from the first bonding material ;
The metal layer is a thermo module having a portion protruding from a side surface of a second vertical portion of the electric circuit connecting member in plan view .

  According to a third aspect of the thermomodule of the present invention, in addition to the first or second aspect, at least a central part of both end portions in the thickness direction of the thermoelectric semiconductor element and at least a part of the metal layer are used. The thermomodule further includes a resin layer disposed so as to cover the entire surface of both surface portions in the thickness direction of the substrate.

  A fourth aspect of the thermo module of the present invention is a thermo module in which element metal layers are respectively formed on the entire surface of both ends of the thermoelectric semiconductor element in addition to the first or second aspect.

  A fifth aspect of the thermo module of the present invention is a thermo module in which element metal layers are respectively formed on the entire surface of both end portions of the thermoelectric semiconductor element in addition to the third aspect.

  A sixth aspect of the thermo module of the present invention is a thermo module in which the metal layer is formed on the entire circumference of the hole in addition to the fourth aspect.

  A seventh aspect of the thermo module of the present invention is a thermo module in which the metal layer is formed all around the hole in addition to the fifth aspect.

  An eighth aspect of the thermomodule of the present invention includes, in addition to the sixth aspect, a wall surface forming the hole of the resin base material, the metal layer, the second bonding material, and the element metal layer. It is a thermo module having a heat insulating layer formed by being sealed by a side surface of the thermoelectric semiconductor element, the first bonding material, and the electric circuit connecting member.

  According to a ninth aspect of the thermomodule of the present invention, in addition to the seventh aspect, a wall surface forming the hole of the resin base, a side surface of the thermoelectric semiconductor element including the element metal layer, and the resin It is a thermomodule having a heat insulating layer formed by being sealed with a layer.

The first aspect of the thermomodule manufacturing method of the present invention is to prepare a resin substrate of a predetermined shape,
Providing the resin base material with holes into which a plurality of pairs of p-type and n-type thermoelectric semiconductor elements arranged alternately are inserted,
Forming a metal layer on at least a part around the hole of the resin base material,
Inserting the thermoelectric semiconductor element in which element metal layers are formed at both ends in the thickness direction in the plurality of holes,
An electrical circuit connecting member on the element metal layer and the metal layer, the metal layer is placed so as to have the protruding from the side surface of the electric circuit connecting member portion in a plan view, the said element metal layer electrically The first bonding material is separated between the circuit connecting member, the second bonding material is separated between the metal layer and the electric circuit connecting member, and the first bonding material and the second bonding material are separated. It is the manufacturing method of a thermo module which supplies each so that it may be formed in a body, joins an electric circuit connection member, and manufactures a thermo module.

According to a second aspect of the thermomodule manufacturing method of the present invention, a resin base material having a predetermined shape is prepared,
Providing the resin base material with holes into which a plurality of pairs of p-type and n-type thermoelectric semiconductor elements arranged alternately are inserted,
Forming a metal layer on at least a part around the hole of the resin base material,
Inserting the thermoelectric semiconductor element in which element metal layers are formed at both ends in the thickness direction in the plurality of holes,
Forming a resin layer on the entire surface of the resin substrate except for a portion corresponding to the central portion of the element metal layer and the metal layer of the thermoelectric semiconductor element;
An electrical circuit connecting member on the element metal layer and the metal layer, the metal layer is placed so as to have the protruding from the side surface of the electric circuit connecting member portion in a plan view, the said element metal layer electrically The first bonding material is separated between the circuit connecting member, the second bonding material is separated between the metal layer and the electric circuit connecting member, and the first bonding material and the second bonding material are separated. It is the manufacturing method of a thermo module which supplies each so that it may be formed in a body, joins an electric circuit connection member, and manufactures a thermo module.

    According to the thermo module of the present invention, the metal layer is provided on the peripheral edge of the hole of the resin base material into which a plurality of pairs of p-type and n-type thermoelectric semiconductor elements are inserted. Even when an external force such as vibration is applied to the thermoelectric semiconductor element, no force is directly applied to the thermoelectric semiconductor element, so that the thermoelectric semiconductor element can be prevented from being broken.

Hereinafter, the thermo module of the present invention will be described with reference to embodiments shown in the drawings.
One aspect of the thermo module of the present invention includes a plurality of pairs of p-type and n-type thermoelectric semiconductor elements arranged in a predetermined form,
A resin base material formed corresponding to the thermoelectric semiconductor element and provided with a plurality of holes into which the entire thermoelectric semiconductor element is inserted;
A metal layer formed on at least a part of the periphery of the hole at both ends in the thickness direction of the resin substrate;
And a heat radiation fin and Tona Ru electric circuit connecting member disposed in parallel with bottom and bottom surface perpendicular to an electrical circuit,
The plurality of pairs of p-type and n-type thermoelectric semiconductor elements are electrically connected in series by a bottom surface portion of the electric circuit connecting member via a first bonding material formed thereon, and the electric circuit The bottom surface portion of the connecting member is fixed to the metal layer via a second bonding material formed separately from the first bonding material ,
The metal layer is a thermo module having a portion protruding from a side surface of the electric circuit connecting member in plan view .

  That is, in the thermo module of the present invention, the reinforcing metal layer is formed on a part of the peripheral edge of the hole of the resin base material into which the thermoelectric semiconductor element is inserted, and the shoulder of the electric circuit connecting member is formed on the metal layer. The part is fixed by the bonding layer.

  Fig.1 (a) is a top view explaining the state by which the metal layer was formed in the whole peripheral part of the hole of the resin base material of this invention. FIG.1 (b) is a top view explaining the state by which the thermoelectric semiconductor element was inserted in the hole of the resin base material in which the metal layer was formed in the peripheral part.

  As shown in FIG. 1A, the resin base 4 is provided with a plurality of holes 5 that are arranged corresponding to the thermoelectric semiconductor elements 2 and into which the thermoelectric semiconductor elements 2 are inserted. A metal layer 7 is formed on the peripheral edge of the hole 5 of the resin base material 4 that forms the hole 5. In the embodiment shown in FIG. 1A, the metal layer 7 is formed on the entire circumference of the hole 5. As shown in FIG. 1B, the thermoelectric semiconductor element 2 is inserted in the center of the hole 5 of the resin base material 4 in which the metal layer 7 is formed at the peripheral edge. In the thermoelectric semiconductor element 2, p-type thermoelectric semiconductor elements and n-type thermoelectric semiconductor elements are alternately arranged. For example, an n-type thermoelectric semiconductor element 2-2 is disposed below the upper right p-type thermoelectric semiconductor element 2-1, and an n-type thermoelectric semiconductor element 2 is disposed on the left of the upper right p-type thermoelectric semiconductor element 2-1. -2 is arranged. A space between the metal layer 7 and the thermoelectric semiconductor element 2 becomes the heat insulating layer 6.

  FIG. 2 is a cross-sectional view illustrating the thermo module of the present invention. As shown in FIG. 2, the thermoelectric semiconductor element 2 having the element metal layer 3 formed at both ends is disposed in a hole 5 formed through the resin base material 4. In the thermoelectric semiconductor element 2, p-type thermoelectric semiconductor elements and n-type thermoelectric semiconductor elements are alternately arranged. For example, an n-type thermoelectric semiconductor element 2-2 is disposed on the left side of the right p-type thermoelectric semiconductor element 2-1, and a p-type thermoelectric semiconductor element 2-1 is disposed on the left side thereof. For example, the metal layer 7 described with reference to FIGS. 1A and 1B is formed on the peripheral edge of the hole 5 of the resin base material 4. A gap is formed as a heat insulating layer 6 between the thermoelectric semiconductor element 2 and the hole 5 of the resin base material 4.

  That is, in this embodiment in which the metal layer 7 is formed on the entire circumference of the hole 5, the heat insulating layer 6 is formed so as to cover the four circumferences of the thermoelectric semiconductor element 2 including the element metal layer 3. On the element metal layer 3, a first bonding material is supplied to form a bonding layer 9, and the electric circuit connecting member 8 is bonded via the bonding layer 9. The electric circuit connecting member 8 has, for example, a flat bottom surface portion 11 that forms an electric circuit and a plate-like heat radiation fin 12 that is perpendicular to the bottom surface portion 11 and parallel to each other at both ends of the bottom surface portion. It is a letter shape. A flat bottom surface portion 11 forming an electric circuit electrically connects adjacent p-type and n-type thermoelectric semiconductor elements in series.

  The shoulder 13 of the electric circuit connecting member 8 is joined to the metal layer 7 formed on the peripheral edge of the hole 5 from the outside by a second joining material. That is, even if a force is applied to the radiating fin 12 from the outside, the radiating fin 12 is firmly fixed and supported by the metal layer 7 formed on the resin base material 4, so that the force applied from the outside is applied to the thermoelectric semiconductor element. 2 is not transmitted. Accordingly, it is possible to prevent the thermoelectric semiconductor element 2 from being broken even in an environment where an external force due to vibration or the like is applied.

  As described above, the first bonding material is supplied, and the electric circuit connecting member 8 is bonded to the element metal layers 3 formed in advance at both upper and lower ends of the thermoelectric semiconductor element 2 through the bonding layers 9 and 10. And the heat insulating layer 6 is the wall surface forming the hole 5 of the resin base material 4, the metal layer 7, the side surface of the thermoelectric semiconductor element 2 including the element metal layer 3, the bottom surface part 11 of the electric circuit connecting member 8, and the bonding layer 9. 10 is formed as a space sealed by 10. This prevents the thermoelectric semiconductor element 2 from being exposed to the outside air.

  In FIG. 2, a p-type thermoelectric semiconductor element 2-1 is arranged at the right end, an n-type thermoelectric semiconductor element 2-2 is arranged in the middle, and a p-type thermoelectric semiconductor element 2-1 is arranged at the left end. Between the adjacent thermoelectric semiconductor elements 2, the resin base material 4 in which the metal layer 7 is formed on the peripheral edge portion of the hole portion 5 at the upper and lower end portions is disposed, and as described above, the shoulder portion of the electric circuit connecting member 8 13 is firmly bonded to the metal layer 7 by the bonding layer 10.

  In addition, according to the thermomodule of the aspect shown in FIG. 2, since it has the sealed heat insulation layer, damage to the module accompanying dew condensation can be avoided.

  Fig.3 (a) is a partial top view explaining the state in which the metal layer was formed over the perimeter of the peripheral part of the hole of a resin base material. FIG. 3B is a partial plan view for explaining a state in which the electric circuit connecting member is disposed on the metal layer shown in FIG. As shown to Fig.3 (a), the metal layer 7 is formed over the perimeter of the peripheral part of the hole 5 provided by penetrating in the thickness direction of the resin base material 4. FIG. In the center of the hole 5, p-type thermoelectric semiconductor elements 2-1 and n-type thermoelectric semiconductor elements 2-2 are alternately arranged. Gaps are provided around the four circumferences of the thermoelectric semiconductor element 2. As shown in FIG. 3B, the flat bottom surface portion 11 that forms the electric circuit of the electric circuit connecting member 8 is disposed on the metal layer 7 formed on the entire circumference of the peripheral edge portion of the hole portion 5.

  In this embodiment, as described with reference to FIG. 2, the first bonding material is supplied between the element metal layer 3 formed on the thermoelectric semiconductor element 2 and the electric circuit connecting member 8, and the bonding layer 9. The element metal layer 3 and the electric circuit connecting member 8 are joined via the. Since the metal layer 7 is formed in a wider range than the flat bottom surface portion 11 of the electric circuit connecting member 8, when viewed from above, it can be seen that the metal layer 7 is sandwiched on the four side surfaces of the bottom surface portion 11. . The periphery of the bottom surface portion 11 of the electric circuit connecting member 8 is bonded to the metal layer 7 by the bonding layer 10. Therefore, in this aspect, the electric circuit connecting member 8 is firmly fixed to the metal layer 7 and the entire circumference of the metal layer 7 and the electric circuit connecting member 8 are joined to block the thermoelectric semiconductor element 2 from the outside air. Can do. The radiating fins 12 that are perpendicular to the bottom surface portion 11 and arranged in parallel with each other are provided at both ends along the major axis direction of the bottom surface portion 11.

  In the embodiment shown in FIG. 3 as well, since the sealed heat insulating layer is provided, it is possible to avoid damage to the module due to condensation.

  Fig.4 (a) is a partial top view explaining the state by which the metal layer was formed in a part of peripheral part of the hole of a resin base material. FIG. 4B is a partial plan view for explaining a state in which the electric circuit connecting member is disposed on the metal layer shown in FIG. As shown in FIG. 4A, a metal layer 7 is formed on the opposing surface of the peripheral edge of the hole 5 provided so as to penetrate in the thickness direction of the resin base material 4. That is, the metal layer 7 is formed so as to connect each side (the upper side in the figure) of the same side of the two adjacent hole portions 5, and the two adjacent hole portions 5 are opposite to each other. A metal layer 7 is formed so as to connect one side of each side (lower side in the figure). In the center of the hole 5, p-type thermoelectric semiconductor elements 2-1 and n-type thermoelectric semiconductor elements 2-2 are alternately arranged. Gaps are provided around the four circumferences of the thermoelectric semiconductor element 2. As shown in FIG. 4B, a flat bottom surface portion 11 for forming an electric circuit of the electric circuit connecting member 8 on the metal layer 7 formed so as to communicate two opposing sides of the hole portion 5 respectively. Is placed.

  In this aspect, it can join to the bottom face part 11 of the electric circuit connection member 8 without interruption over the whole length direction of each metal layer 7, and joining strength increases. As described with reference to FIG. 2, the first bonding material is supplied between the element metal layer 3 formed on the thermoelectric semiconductor element 2 and the electric circuit connecting member 8, via the bonding layer 9. The element metal layer 3 and the bottom surface portion 11 of the electric circuit connecting member 8 are joined together. Since the metal layer 7 is formed in a range wider than the flat bottom surface portion 11 of the electric circuit connecting member 8, the metal layer 7 protrudes on two opposite side surfaces of the bottom surface portion 11 when viewed from above. Can be seen. Two side surfaces of the bottom surface portion 11 of the electric circuit connecting member 8 are bonded to the metal layer 7 by the bonding layer 10. Therefore, in this aspect, the electric circuit connecting member 8 is firmly fixed to the metal layer 7. The radiating fins 12 that are perpendicular to the bottom surface portion 11 and arranged in parallel with each other are provided at both ends along the major axis direction of the bottom surface portion 11.

  FIG. 5A is a partial plan view illustrating a state in which the metal layer 7 is formed on the other part of the peripheral edge of the hole 5 of the resin base material 4. FIG. 5B is a partial plan view for explaining a state where the electric circuit connecting member 8 is disposed on the metal layer 7 shown in FIG. As shown in FIG. 5 (a), metal layers 7 are formed in parallel on the two opposing sides of the peripheral edge of the hole 5 provided penetrating in the thickness direction of the resin base material 4.

  That is, the metal layer 7 is formed in parallel along two opposing sides (two sides on the right and left in the figure) that form the respective holes 5. Adjacent hole portions 5 are also formed with metal layers 7 in parallel along the same two sides. In the center of the hole 5, p-type thermoelectric semiconductor elements 2-1 and n-type thermoelectric semiconductor elements 2-2 are alternately arranged. Gaps are provided on the four circumferences of each thermoelectric semiconductor element 2. As shown in FIG. 5B, the flat bottom surface portion 11 forming the electric circuit of the electric circuit connecting member 8 is connected to the metal layer 7 formed along the two opposing sides of the hole portion 5. Be placed. That is, both end portions in the longitudinal direction of the flat bottom surface portion 11 are in contact with the metal layer 7 over the entire area. The metal layer 7 formed along the inner side of the adjacent hole portion 5 extends along the minor axis direction of the flat bottom surface portion 11, and the end portion protrudes from the bottom surface portion.

  In this embodiment, as described with reference to FIG. 2, the first bonding material is supplied between the element metal layer 3 formed on the thermoelectric semiconductor element 2 and the electric circuit connecting member 8, and the bonding layer 9. The element metal layer 3 and the electric circuit connecting member 8 are joined via the. The flat bottom surface portion 11 of the metal layer 7 and the electric circuit connecting member 8 is joined by the joining layer 10 at a portion where both end portions in the longitudinal direction of the bottom surface portion 11 and the central metal layer 7 protrude. Therefore, in this aspect, the electric circuit connecting member 8 is firmly fixed to the metal layer 7. In this aspect, the space | interval of the adjacent radiation fin 11 can be narrowed.

  FIG. 6A is a partial plan view illustrating a state in which a metal layer is formed on the other part of the peripheral edge of the hole 5 of the resin base material 4. FIG. 6B is a partial plan view for explaining a state in which the electric circuit connecting member is disposed on the metal layer shown in FIG. As shown to Fig.6 (a), the metal layer 7 is formed in the whole region of the area | region between the hole parts 5 which adjoined and provided in the thickness direction of the resin base material 4 in the horizontal direction.

  That is, the minor axis direction of the metal layer 7 is formed over the entire region between two holes adjacent in the lateral direction, and the longitudinal direction of the metal layer 7 is formed to be longer than one side of the hole 5. In the center of the hole 5 adjacent in the lateral direction, p-type thermoelectric semiconductor elements 2-1 and n-type thermoelectric semiconductor elements 2-2 are alternately arranged. As in the other embodiments, gaps are provided on the four sides of each thermoelectric semiconductor element 2. As shown in FIG. 6B, the central portion of the flat bottom surface portion 11 of the electric circuit connecting member 8 is in contact with the metal layer 7.

  In this embodiment, as described with reference to FIG. 2, the first bonding material is supplied between the element metal layer 3 formed on the thermoelectric semiconductor element 2 and the electric circuit connecting member 8, and the bonding layer 9. The element metal layer 3 and the electric circuit connecting member 8 are joined via the. The flat bottom surface portion 11 of the metal layer 7 and the electric circuit connecting member 8 is bonded to the metal layer by the bonding layer 9 at the center portion in the longitudinal direction of the bottom surface portion 11 and the side surface of the bottom surface portion is bonded to the metal layer by the bonding layer 10. . Therefore, in this aspect, since the metal layer 7 is formed over the entire area between the adjacent hole portions 5, the electric circuit connecting member 8 is firmly fixed by the metal layer 7.

  Another aspect of the thermomodule of the present invention is that both the thickness direction of the resin base material except for the central portion and the metal layer at both ends in the thickness direction of the thermoelectric semiconductor element of the thermomodule according to one aspect of the above-described thermomodule. A resin layer is further provided so as to cover the entire surface portion. That is, in this embodiment, the electric circuit connecting member is firmly bonded, and the entire surface of both surfaces (parts other than the bonding layer and the metal layer) is covered with the resin layer, the heat insulating layer is sealed, and the thermoelectric semiconductor element is completely formed. Shielded from outside air. This will be specifically described below.

  FIG. 7 is a partial plan view for explaining a state in which a metal layer is formed on the peripheral portion of the hole portion of the resin base material and the resin layer is formed on the entire surface except for the central portion and the metal layer of the element metal layer. As shown in FIG. 7, the metal layer 7 is formed over the entire periphery of the peripheral edge of the hole 5 provided penetrating in the thickness direction of the resin base material 4. A resin layer 14 is formed on the entire outer side of each metal layer 7 formed on the resin substrate 4. Further, a resin layer 14 is also formed inside each metal layer 7 except for the central portion of the element metal layer 3 formed on the upper and lower end faces of the thermoelectric semiconductor element 2.

  That is, the resin layer 14 inside the metal layer 7 is formed so as to completely seal the heat insulating layer 6 formed by the wall surface of the hole 5 and the side wall surface of the thermoelectric semiconductor element 2 from above and below. In other words, both surfaces of the resin base material 4 are completely covered with the resin layer 14 and the metal layer 7 except for the central portion of each element metal layer 3 located inside the metal layer 7. Also in this embodiment, p-type thermoelectric semiconductor elements 2-1 and n-type thermoelectric semiconductor elements 2-2 are alternately arranged in the center of adjacent hole portions 5. The electric circuit connecting member 8 is bonded to the metal layer 7 via the bonding layer 10 in a state covered with the resin layer 14 and the metal layer 7 in this manner. In this way, the thermoelectric semiconductor element 2 is completely sealed and is not exposed to the outside air. Therefore, condensation can be prevented.

  FIG. 8 is a cross-sectional view illustrating another embodiment of the thermo module of the present invention. As shown in FIG. 8, the thermoelectric semiconductor element 2 in which the element metal layer 3 is formed at both ends is disposed in a hole 5 formed through the resin base material 4. In the thermoelectric semiconductor element 2, p-type thermoelectric semiconductor elements and n-type thermoelectric semiconductor elements are alternately arranged. For example, a p-type thermoelectric semiconductor element 2-1 is arranged at the right end, an n-type thermoelectric semiconductor element 2-2 is arranged at the left side, that is, the center, and a p-type thermoelectric semiconductor element 2-1 is arranged at the left side, that is, the left end. Yes. For example, the metal layer 7 described with reference to FIG. 7 is formed on the peripheral edge of the hole 5 of the resin base 4. Sealed by the side wall surface of the thermoelectric semiconductor element 2 including the element metal layer 3, the wall surface of the hole 5 of the resin base material 4, and the resin layer 14 formed inside the metal layer 7 (described in FIG. 7). A gap portion is formed as the heat insulating layer 6. Furthermore, a resin layer 14 is formed outside the metal layer 7 so as to cover the entire surface (as described in FIG. 7).

  A first bonding material is supplied to the central portion of the element metal layer 3 located inside the metal layer 7 to form the bonding layer 9, and the electric circuit connecting member 8 is bonded via the bonding layer 9. The electric circuit connecting member 8 has a substantially U-shaped cross section including a flat bottom surface portion 11 forming an electric circuit and plate-like heat radiation fins 12 perpendicular to the bottom surface portion and arranged in parallel to both ends of the bottom surface portion. A flat bottom surface portion 11 forming an electric circuit electrically connects adjacent p-type and n-type thermoelectric semiconductor elements in series.

  The shoulder 13 of the electric circuit connecting member 8 is joined to the metal layer 7 formed on the peripheral edge of the hole 5 from the outside by a second joining material. Thereby, even if a force is applied to the radiating fin 12 from the outside, the force applied from the outside is transmitted to the thermoelectric semiconductor element 2 because it is firmly fixed and supported by the metal layer 7 formed on the resin base material 4. There is nothing. Accordingly, it is possible to prevent the thermoelectric semiconductor element 2 from being broken even in an environment where an external force due to vibration or the like is applied. Further, since the thermoelectric semiconductor element 2 is disposed in a completely sealed state, it is not exposed to the outside air, and condensation can be prevented.

  In this manner, the thermoelectric semiconductor element 2 is sealed with the heat insulating layer 6 around it, and the bonding layer 9 is formed in the recess formed by one surface of the element metal layer 3 and the opening of the resin layer, The electric circuit connecting member 8 is formed so that a plurality of pairs of p-type and n-type thermoelectric semiconductor elements are electrically connected in series via the bonding layer. In this way, the thermoelectric semiconductor element 2 is disposed in the hole 5 of the resin base 4 via the heat insulating layer 6 and sandwiched by the electric circuit connecting member 8 via the resin layer 14, the metal layer 7, and the bonding layers 9 and 10. The thermo module is formed in a sealed state.

  As described above, each of the thermoelectric semiconductor elements 2 is surrounded by the heat insulating layer 6 on the four sides, and the resin base material 4, the element metal layer 3, the metal layer 7, and the bonding layers 9 and 10 (the resin layer 14 may be included). Is completely sealed. The resin base material 4 is excellent in heat resistance and insulation. The resin layer connecting the thermoelectric semiconductor element 2 and the resin base material 4 has a stress relaxation function.

  FIG. 9 is a cross-sectional view for explaining one embodiment of the thermo module of the present invention provided with heat radiation fins according to another embodiment. As shown in FIG. 9, the electric circuit connecting member 8 includes a flat bottom surface portion 11 that forms an electric circuit, a first vertical portion 12 that is perpendicular to the bottom surface portion 11 and arranged in parallel to each other, and a first A second vertical portion 16 disposed parallel to each other outside the vertical portion 12 and a flat upper surface 15 respectively connecting the first vertical portion 12 and the top of the second vertical portion 16 are integrally formed. It has been done. In this aspect, the flat bottom surface portion 11 of the electric circuit connecting member 8 is bonded to the element metal layers formed on the upper and lower surfaces of the thermoelectric semiconductor element via the first bonding material, and the second vertical portion is a hole portion. It is fixed by a metal layer formed around and a second bonding material. According to the electric circuit connecting member of this aspect, a large number of solder fillets can be formed in each part bonding layer, and thus a higher proof stress can be obtained from an external force due to vibration or the like. Further, since the solder fillet can be formed, bubbles can be easily removed from the bonding layer, and the bonding strength can be increased. The other portions are substantially the same as those of the thermo module described with reference to FIG.

  FIG. 10 is a cross-sectional view for explaining another embodiment of the thermo module of the present invention provided with heat radiation fins of another embodiment. The difference from the embodiment shown in FIG. 9 is that the embodiment shown in FIG. 10 further includes a resin layer 14. As shown in FIG. 10, the electric circuit connecting member 8 includes a flat bottom surface portion 11 that forms an electric circuit, a first vertical portion 12 that is perpendicular to the bottom surface portion 11 and arranged in parallel with each other, and a first A second vertical portion 16 disposed parallel to each other outside the vertical portion 12 and a flat upper surface 15 respectively connecting the first vertical portion 12 and the top of the second vertical portion 16 are integrally formed. It has been done. In this aspect, the flat bottom surface portion 11 of the electric circuit connecting member 8 is bonded to the element metal layers formed on the upper and lower surfaces of the thermoelectric semiconductor element via the first bonding material, and the second vertical portion is a hole portion. It is fixed by a metal layer formed around and a second bonding material.

  Further, the surface of the resin base 4 and the entire area from the periphery of the thermoelectric semiconductor element to the periphery of the second bonding material are covered with a resin layer so as to close the hole, and the heat insulation is sealed around the thermoelectric semiconductor element. A layer is formed. According to the electric circuit connecting member of this aspect, a large number of solder fillets can be formed in each part bonding layer, and thus a higher proof stress can be obtained from an external force due to vibration or the like. Further, since the solder fillet can be formed, bubbles can be easily removed from the bonding layer, and the bonding strength can be increased. The other portions are substantially the same as those of the thermo module described with reference to FIG.

  In the thermo module of the present invention described above, since a resin base material having excellent heat resistance and insulation is used as the base material, it can be provided with heat resistance in the assembly process of the module using lead-free solder, The thermal resistance of the thermo module can be minimized.

Next, a method for manufacturing a thermo module will be described.
The thermo module of the present invention is manufactured as follows.
First, a plate-shaped resin substrate having a predetermined shape, for example, a predetermined thickness is prepared.
Next, a plurality of holes into which a plurality of pairs of p-type and n-type thermoelectric semiconductor elements arranged alternately are inserted are provided in the resin base material.

Next, a metal layer is formed on at least a part (for example, the entire circumference) around the hole of the resin base material.
Next, thermoelectric semiconductor elements having element metal layers formed at both ends in the thickness direction are inserted into the holes.

  Next, an electric circuit connecting member is disposed on the element metal layer and the metal layer, and a first bonding material is provided between the element metal layer and the electric circuit connecting member, and between the metal layer and the electric circuit connecting member. The thermoelectric module is manufactured by supplying the second bonding material and bonding the electric circuit connecting members.

  Further, as described above, after the thermoelectric semiconductor element is inserted into the hole and before the electric circuit connecting member is disposed, the resin base except the central portion of the element metal layer of the thermoelectric semiconductor element and the portion corresponding to the metal layer is removed. A resin layer may be formed on the entire surface of the material.

  As described above, the thickness of the resin substrate 4 is substantially the same as the height of the p-type and n-type thermoelectric semiconductor elements 2-1 and 2-2, and the p-type and n-type thermoelectric semiconductor elements 2 are resin-based. The material 4, the metal layer 7, the bonding layers 9 and 10, the electric circuit connecting member 8, and a structure further sealed by a resin layer 14 depending on the situation are provided. The resin base material 4 is preferably a material excellent in heat resistance and insulation. Among them, the lower the thermal conductivity, the better the performance. For example, a resin base material having a thermal conductivity at 60 ° C. of 0.05 to 0.6 W / mk is preferable. In addition, when rigidity is expected, a material having excellent heat resistance and insulation can be selected from resin base materials that can obtain desired rigidity.

  The metal layer 7 is made of copper, nickel, or an alloy thereof, and may be any metal that can be soldered to the electric circuit connecting member 8.

  Examples of the resin substrate 4 include glass epoxy, PET (polyethylene terephthalate), PPS (polyphenylene sulfide), PEI (polyetherimide), PEEK (polyetheretherketone), PBI, PFA, PI (polyimide), and LCP (liquid crystal). Polymer) or SPS (syndiotactic polystyrene).

  The heat insulating layer 6 formed between the wall surface of the hole 5 of the resin base material 4 and the p-type and n-type thermoelectric semiconductor elements inserted therein is made of air, inert gas, or foamed resin. The thickness of the heat insulating layer 6, that is, the distance between the thermoelectric semiconductor element 2 and the wall surface of the hole 5 of the resin base material 4 is preferably in the range of 0.005 mm to 0.5 mm. From the restriction of the processed surface, 0.005 mm or more is preferable. If the thickness of the heat insulating layer exceeds 0.5 mm, the filling factor of the element is lowered, which is not preferable.

  The resin layer 14 is made of a heat-sensitive photosensitive cover lay, a thermoplastic film, or a film with an adhesive. The thickness of the resin layer 14 is preferably in the range of 0.0125 mm to 0.1 mm where it can be expected to reduce the thermal stress during operation of the thermo module.

  The bonding layers 9 and 10 are made of, for example, an SnBi solder layer. When the electric circuit connecting member 8 is made of Cu foil, the bonding layer 9 and the electric circuit connecting member 8 are bonded to Sn. Layer diffusion can be utilized.

  The electric circuit connecting member 8 can be in any shape and arrangement according to the application. For example, when used as a heat exchanger, a fin-shaped electrode or an electrode obtained by joining and integrating a fin and an electrode can be used, and the thermal resistance can be reduced. Furthermore, the heat history to the thermoelectric semiconductor element 2 can be minimized, and the reliability is improved.

  According to the present invention, since the metal layer 7 is provided on the peripheral portion of the hole 5 of the resin base material 4, the electric circuit connecting member 8 having the radiation fins 12 is firmly fixed to the metal layer 7 and an external force such as vibration is applied. Even in this case, it is possible to provide a high-performance thermo module that can prevent the thermoelectric semiconductor element 2 from being broken.

Fig.1 (a) is a top view explaining the state in which the metal layer was formed in the peripheral part of the hole of the resin base material of this invention. FIG.1 (b) is a top view explaining the state by which the thermoelectric semiconductor element was inserted in the hole of the resin base material in which the metal layer was formed in the peripheral part. FIG. 2 is a cross-sectional view illustrating the high performance thermo module of the present invention. Fig.3 (a) is a partial top view explaining the state in which the metal layer was formed over the perimeter of the peripheral part of the hole of a resin base material. FIG. 3B is a partial plan view for explaining a state in which the electric circuit connecting member is disposed on the metal layer shown in FIG. Fig.4 (a) is a partial top view explaining the state by which the metal layer was formed in a part of peripheral part of the hole of a resin base material. FIG. 4B is a partial plan view for explaining a state in which the electric circuit connecting member is disposed on the metal layer shown in FIG. FIG. 5A is a partial plan view illustrating a state in which a metal layer is formed on the other part of the peripheral edge of the hole of the resin base material. FIG. 5B is a partial plan view for explaining a state in which the electric circuit connecting member is disposed on the metal layer shown in FIG. Fig.6 (a) is a fragmentary top view explaining the state by which the metal layer was formed in the other part of the peripheral part of the hole of a resin base material. FIG. 6B is a partial plan view for explaining a state in which the electric circuit connecting member is disposed on the metal layer shown in FIG. FIG. 7 is a partial plan view for explaining a state in which a metal layer is formed on the peripheral edge portion of the hole portion of the resin base material and the resin layer is formed on the entire surface excluding the central portion of the element metal layer. FIG. 8 is a cross-sectional view illustrating another aspect of the high performance thermo module of the present invention. FIG. 9 is a cross-sectional view for explaining one embodiment of the thermo module of the present invention provided with heat radiation fins according to another embodiment. FIG. 10 is a cross-sectional view for explaining another embodiment of the thermo module of the present invention provided with heat radiation fins of another embodiment. FIG. 11 is a cross-sectional view illustrating a conventional thermo module.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Thermo module 2 Thermoelectric semiconductor element 3 Element metal layer 4 Resin base material 5 Hole 6 Heat insulation layer 7 Metal layer 8 Electric circuit connection member 9 (1st joining material) Joining layer 10 (2nd joining material) Joining layer 11 Bottom part 12 Radiation fin (first vertical part)
13 shoulder 14 of electric circuit connecting member 14 resin layer 15 flat upper surface 16 second vertical portion

Claims (11)

A plurality of pairs of p-type and n-type thermoelectric semiconductor elements arranged in a predetermined form;
A resin base material formed corresponding to the thermoelectric semiconductor element and provided with a plurality of holes into which the entire thermoelectric semiconductor element is inserted;
A metal layer formed on at least a part of the periphery of the hole at both ends in the thickness direction of the resin substrate;
An electric circuit connecting member comprising a bottom surface portion forming an electric circuit and heat dissipating fins arranged perpendicular to and parallel to the bottom surface portion;
The plurality of pairs of p-type and n-type thermoelectric semiconductor elements are electrically connected in series by a bottom surface portion of the electric circuit connecting member via a first bonding material formed thereon, and the electric circuit The bottom surface portion of the connecting member is fixed to the metal layer via a second bonding material formed separately from the first bonding material,
The thermo module, wherein the metal layer has a portion protruding from a side surface of the electric circuit connecting member in plan view. A plurality of pairs of p-type and n-type thermoelectric semiconductor elements arranged in a predetermined form;
A resin base material formed corresponding to the thermoelectric semiconductor element and provided with a plurality of holes into which the entire thermoelectric semiconductor element is inserted;
A metal layer formed on at least a part of the periphery of the hole at both ends in the thickness direction of the resin substrate;
A bottom surface part forming an electric circuit, a first vertical part perpendicular to the bottom surface part and arranged parallel to each other; a second vertical part arranged parallel to each other outside the first vertical part; An electrical circuit connecting member comprising M-shaped heat radiation fins each composed of an upper surface connecting the tops of the first vertical part and the second vertical part,
The plurality of pairs of p-type and n-type thermoelectric semiconductor elements are electrically connected in series by a bottom surface portion of the electric circuit connecting member via a first bonding material formed thereon, and the electric circuit A second vertical portion of the connection member is fixed to the metal layer via a second bonding material formed separately from the first bonding material;
The thermoelectric module according to claim 1, wherein the metal layer has a portion protruding from a side surface of the second vertical portion of the electric circuit connecting member in plan view.   A resin layer disposed so as to cover the entire surface of both surface portions in the thickness direction of the resin base material, excluding at least a central portion of both end portions in the thickness direction of the thermoelectric semiconductor element and at least a part of the metal layer. The thermo module according to claim 1, further comprising:   The thermomodule according to claim 1 or 2, wherein element metal layers are respectively formed on the entire surface of both end portions of the thermoelectric semiconductor element.   The thermomodule according to claim 3, wherein element metal layers are respectively formed on the entire surface of both end portions of the thermoelectric semiconductor element.   The thermo module according to claim 4, wherein the metal layer is formed all around the hole.   The thermo module according to claim 5, wherein the metal layer is formed all around the hole.   Wall surface forming the hole of the resin substrate, the metal layer, the second bonding material, a side surface of the thermoelectric semiconductor element including the element metal layer, the first bonding material, and the electric circuit connection The thermo module according to claim 6, further comprising a heat insulating layer formed by being sealed by a member.   The thermo of Claim 7 which has the heat insulation layer sealed and formed by the wall surface which forms the said hole part of the said resin base material, the side surface of the said thermoelectric-semiconductor element containing the said element metal layer, and the said resin layer. module. Prepare a resin substrate of a predetermined shape,
Providing the resin base material with holes into which a plurality of pairs of p-type and n-type thermoelectric semiconductor elements arranged alternately are inserted,
Forming a metal layer on at least a part around the hole of the resin base material,
Inserting the thermoelectric semiconductor element in which element metal layers are formed at both ends in the thickness direction in the plurality of holes,
An electrical circuit connecting member on the element metal layer and the metal layer, the metal layer is placed so as to have the protruding from the side surface of the electric circuit connecting member portion in a plan view, the said element metal layer electrically The first bonding material is separated between the circuit connecting member, the second bonding material is separated between the metal layer and the electric circuit connecting member, and the first bonding material and the second bonding material are separated. A method for manufacturing a thermo module, wherein the thermo module is manufactured by supplying each of the electric circuit connecting members so as to be formed on the body and joining the electric circuit connecting members. Prepare a resin substrate of a predetermined shape,
Providing the resin base material with holes into which a plurality of pairs of p-type and n-type thermoelectric semiconductor elements arranged alternately are inserted,
Forming a metal layer on at least a part around the hole of the resin base material,
Inserting the thermoelectric semiconductor element in which element metal layers are formed at both ends in the thickness direction in the plurality of holes,
Forming a resin layer on the entire surface of the resin substrate except for a portion corresponding to the central portion of the element metal layer and the metal layer of the thermoelectric semiconductor element;
An electrical circuit connecting member on the element metal layer and the metal layer, the metal layer is placed so as to have the protruding from the side surface of the electric circuit connecting member portion in a plan view, the said element metal layer electrically The first bonding material is separated between the circuit connecting member, the second bonding material is separated between the metal layer and the electric circuit connecting member, and the first bonding material and the second bonding material are separated. A method for manufacturing a thermo module, wherein the thermo module is manufactured by supplying each of the electric circuit connecting members so as to be formed on the body and joining the electric circuit connecting members.

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