JPH08148459A - Cleaning method of semiconductor substrate - Google Patents
Cleaning method of semiconductor substrateInfo
- Publication number
- JPH08148459A JPH08148459A JP28479094A JP28479094A JPH08148459A JP H08148459 A JPH08148459 A JP H08148459A JP 28479094 A JP28479094 A JP 28479094A JP 28479094 A JP28479094 A JP 28479094A JP H08148459 A JPH08148459 A JP H08148459A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- cleaning
- nozzle
- cleaning liquid
- rotation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、洗浄液をノズルから噴
射させて行うようにした半導体基板の洗浄方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for cleaning a semiconductor substrate, which is carried out by spraying a cleaning liquid from a nozzle.
【０００２】[0002]
【従来の技術】周知の通り、半導体基板の表面に付着し
た微細粒子等の除去は、その表面に向けて洗浄液をノズ
ルから噴射させ、主にその液圧により行っている。例え
ば回転する半導体基板の中央部に向けて固定されたノズ
ルから洗浄液を噴射させる洗浄方法では、直接洗浄液が
当たる部位と当たらない部位が生じ、当たらなかった部
位では周囲を覆う洗浄液での洗浄となるため洗浄効果が
低いものとなっていた。2. Description of the Related Art As is well known, the removal of fine particles and the like adhering to the surface of a semiconductor substrate is performed mainly by the liquid pressure of a cleaning liquid jetted from the nozzle toward the surface. For example, in a cleaning method in which a cleaning liquid is sprayed from a nozzle fixed toward the central portion of a rotating semiconductor substrate, there are a portion directly contacted with the cleaning liquid and a portion not contacted with the cleaning liquid, and the portion not contacted is cleaned with a cleaning liquid covering the surroundings. Therefore, the cleaning effect was low.
【０００３】これに対し、さらに半導体基板のより広範
囲に洗浄液が吹き当てられるように、ノズル位置や洗浄
液の噴射方向を変化させるようにノズルを設け、半導体
基板の表面全体に直接洗浄液が当たるようにして洗浄効
果を高めるようにした洗浄方法などがある。On the other hand, in order to spray the cleaning liquid on a wider area of the semiconductor substrate, nozzles are provided so as to change the nozzle position and the spray direction of the cleaning liquid, so that the cleaning liquid is directly applied to the entire surface of the semiconductor substrate. There is a cleaning method that enhances the cleaning effect.
【０００４】以下、従来技術を図４及び図５を参照して
説明する。図４は洗浄装置の概略構成を示す側面図であ
り、図５は洗浄の概要を説明するために示す半導体基板
の上面図である。The prior art will be described below with reference to FIGS. 4 and 5. FIG. 4 is a side view showing a schematic configuration of the cleaning apparatus, and FIG. 5 is a top view of a semiconductor substrate shown for explaining an outline of cleaning.
【０００５】図４及び図５において、１は洗浄装置の回
転支持機構であり、この回転支持機構１の垂直な回転軸
２の上部には被洗浄物である半導体基板３をその上面が
水平になるよう支持する支持枠４が設けられている。５
は支持枠４の上方に設けられた洗浄液を噴射するノズル
であり、このノズル５の下端に設けられた断面形状が円
形の噴射口６は支持枠４に支持された半導体基板３の上
面に対向するように設けられている。In FIG. 4 and FIG. 5, reference numeral 1 denotes a rotation support mechanism of the cleaning apparatus, and a semiconductor substrate 3 as an object to be cleaned has a horizontal upper surface on an upper part of a vertical rotation shaft 2 of the rotation support mechanism 1. A support frame 4 for supporting the above is provided. 5
Is a nozzle provided above the support frame 4 for injecting the cleaning liquid, and an injection port 6 having a circular cross section provided at the lower end of the nozzle 5 faces the upper surface of the semiconductor substrate 3 supported by the support frame 4. It is provided to do.
【０００６】またノズル５は、支持枠４に支持された半
導体基板３の回転中心近傍の上方と周縁部の上方との間
を半径方向に直線的に等速度で移動し往復するように設
けられている。The nozzle 5 is provided so as to reciprocate linearly at a constant speed in the radial direction between above the vicinity of the center of rotation of the semiconductor substrate 3 supported by the support frame 4 and above the peripheral portion. ing.
【０００７】そして、支持枠４に支持され一定の回転数
で回転する半導体基板３の上面に向けて、直線的に往復
移動するノズル５の噴射口６から洗浄液を噴射させ、半
導体基板３の上面の洗浄を行うようになっている。この
とき噴射口６から噴射された洗浄液は、半導体基板３の
上面の半径ｐの円形領域に直接当たり、この円形領域が
移動して行くことによって半導体基板３の上面が液圧に
よって洗浄される。Then, the cleaning liquid is jetted from the jet port 6 of the nozzle 5 which linearly reciprocates toward the upper surface of the semiconductor substrate 3 which is supported by the support frame 4 and rotates at a constant rotation speed, and the upper surface of the semiconductor substrate 3 is ejected. It is designed to be washed. At this time, the cleaning liquid sprayed from the spray port 6 directly hits a circular area having a radius p on the upper surface of the semiconductor substrate 3, and the circular area moves to clean the upper surface of the semiconductor substrate 3 by hydraulic pressure.
【０００８】このような洗浄装置で半導体基板３の洗浄
を行うと、等速度ｕで半径方向に移動するノズル５に対
し一定の回転数Ｎで回転する半導体基板３上では、半径
方向の異なる位置により回転方向の移動速度が異なって
おり、回転中心近傍の回転方向の移動速度に比べ周縁部
での回転方向の移動速度が速くなる。例えば、図５示す
ように半導体基板３の半径がｒa の円周上の点Ａの移動
速度がｖa であるのに対し、半径がｒb ＝２ｒa の円周
上の点Ｂでの移動速度はｖb ＝２ｖa である。When the semiconductor substrate 3 is cleaned by such a cleaning device, different positions in the radial direction are formed on the semiconductor substrate 3 which rotates at a constant rotation speed N with respect to the nozzle 5 which moves in the radial direction at a constant velocity u. Therefore, the moving speed in the rotating direction is different, and the moving speed in the rotating direction at the peripheral portion is faster than the moving speed in the rotating direction near the rotation center. For example, the radius of the semiconductor substrate 3 as shown FIG Whereas the moving speed of the point A on the circumference of r a is v a, radius at a point B on the circumference of r b = 2r a movement speed is v b = 2v a.
【０００９】このため、ノズル５から噴射された洗浄液
が半導体基板３の上面に当たっている時間、すなわち半
導体基板３の上面の部位が噴射を受けている時間は半径
方向の位置により異なる。例えば半径がｒa の円周上の
点Ａでは、噴射口６から噴射された洗浄液が半導体基板
３の上面に当たる半径ｐの円形領域を横切る時間に略等
しいｔa だけ噴射を受けているのに対し、ノズル５が等
速度ｕで半径方向に移動するので半径がｒb ＝２ｒa の
円周上の点Ｂでは、半径ｐの円形領域を横切る時間に略
等しいｔb ＝ｔa ／２だけ噴射を受け、点Ｂが洗浄液の
噴射を受けている時間は点Ａの半分である。このように
噴射を受けている時間は回転中心近傍では長く、周縁部
に行くにしたがって短くなる。Therefore, the time during which the cleaning liquid sprayed from the nozzle 5 is in contact with the upper surface of the semiconductor substrate 3, that is, the time during which the upper surface portion of the semiconductor substrate 3 is sprayed differs depending on the radial position. For example, at a point A on the circumference having a radius r a , the cleaning liquid sprayed from the spray port 6 is sprayed for a time t a substantially equal to the time it takes to traverse the circular region having the radius p hitting the upper surface of the semiconductor substrate 3. On the other hand, since the nozzle 5 moves in the radial direction at the constant velocity u, at the point B on the circumference of the radius of r b = 2r a , t b = t a / 2 which is approximately equal to the time of crossing the circular area of the radius p. The time during which the point B receives the injection of the cleaning liquid after the injection is half that of the point A. In this way, the time of receiving the injection is long in the vicinity of the center of rotation, and becomes shorter toward the peripheral portion.
【００１０】その結果、半導体基板３の上面の洗浄は、
周縁部での洗浄が確実に行われるよう回転中心近傍の洗
浄が十分に行われた後でもノズル５を繰り返し半径方向
に往復移動させ、周縁部に洗浄液が所定時間以上当てら
れるようにしている。こうしたことから半導体基板３の
上面を洗浄する時間は、周縁部を確実に洗浄することが
できる時間によって決められることになり、比較的長時
間を要するものとなっていた。As a result, the cleaning of the upper surface of the semiconductor substrate 3 is
The nozzle 5 is repeatedly reciprocally moved in the radial direction even after the cleaning in the vicinity of the rotation center is sufficiently performed so that the cleaning is surely performed at the peripheral portion, and the cleaning liquid is applied to the peripheral portion for a predetermined time or longer. For this reason, the time for cleaning the upper surface of the semiconductor substrate 3 is determined by the time for which the peripheral portion can be reliably cleaned, which requires a relatively long time.
【００１１】また、洗浄に要する時間が長いことから、
使用する洗浄液も多量に必要とするものとなっていた。Since the time required for cleaning is long,
A large amount of cleaning liquid has to be used.
【００１２】[0012]
【発明が解決しようとする課題】上記のように従来は、
半導体基板の上面周縁部に洗浄液が所定時間以上当たり
洗浄が確実に行われるようノズルを繰り返し半径方向に
往復移動させており、洗浄に比較的長時間を要すると共
に多量の洗浄液を必要としていた。このような状況に鑑
みて本発明はなされたもので、その目的とするところは
半導体基板の上面の洗浄が回転中心近傍から周縁部まで
が短時間のうちに確実に行え、多量の洗浄液を必要とし
ない半導体基板の洗浄方法を提供することにある。SUMMARY OF THE INVENTION As described above, conventionally,
The nozzle is repeatedly moved back and forth in the radial direction so that the cleaning liquid can be reliably carried out on the peripheral portion of the upper surface of the semiconductor substrate for a predetermined time or more, and the cleaning requires a relatively long time and a large amount of cleaning liquid. The present invention has been made in view of such a situation, and an object thereof is to reliably clean the upper surface of the semiconductor substrate from the vicinity of the rotation center to the peripheral portion in a short time, and a large amount of cleaning liquid is required. Another object of the present invention is to provide a method of cleaning a semiconductor substrate that does not meet the requirements.
【００１３】[0013]
【課題を解決するための手段】本発明の半導体基板の洗
浄方法は、回転支持された半導体基板の表面に回転半径
方向に移動するノズルから洗浄液を噴射させて該表面を
洗浄する半導体基板の洗浄方法において、半導体基板の
表面が洗浄液の噴射を受けている時間が、ノズルの各移
動位置で略一定となるようにしたことを特徴とするもの
であり、さらに、ノズルから噴射する洗浄液に超音波振
動を加えるようにしたことを特徴とするものであり、さ
らに、ノズルから噴射する洗浄液が半導体基板の表面の
中心部と周縁部の間を一度移動もしくは往復する間に該
表面の洗浄が完了するものであることを特徴とするもの
であり、さらに、半導体基板の表面が洗浄液の噴射を受
けている時間が、半導体基板の回転数もしくはノズルの
移動速度の少なくとも一方を制御することによって調整
されていることを特徴とするものであり、さらに、半導
体基板の回転数もしくはノズルの移動速度の少なくとも
一方の制御が、ノズルの各移動位置での該ノズルの移動
速度と半導体基板の回転方向の移動速度との積が略一定
となるようにするものであることを特徴とするものであ
る。According to the method of cleaning a semiconductor substrate of the present invention, a cleaning liquid is sprayed from a nozzle moving in the radial direction of rotation onto the surface of a semiconductor substrate that is rotationally supported to clean the surface of the semiconductor substrate. The method is characterized in that the time during which the surface of the semiconductor substrate is being sprayed with the cleaning liquid is set to be substantially constant at each movement position of the nozzle, and ultrasonic waves are added to the cleaning liquid sprayed from the nozzle. It is characterized in that vibration is applied, and further, while the cleaning liquid sprayed from the nozzle once moves or reciprocates between the central part and the peripheral part of the surface of the semiconductor substrate, the cleaning of the surface is completed. In addition, the time during which the surface of the semiconductor substrate is being sprayed with the cleaning liquid is small when the rotation speed of the semiconductor substrate or the moving speed of the nozzle is small. Is controlled by controlling one of them, and further, at least one of the rotation speed of the semiconductor substrate and the moving speed of the nozzle is controlled by the movement of the nozzle at each moving position of the nozzle. It is characterized in that the product of the speed and the moving speed of the semiconductor substrate in the rotating direction is made substantially constant.
【００１４】[0014]
【作用】上記のように構成された半導体基板の洗浄方法
は、回転する半導体基板の表面を回転半径方向に移動す
るノズルから噴射された洗浄液によって洗浄する際、半
導体基板表面が洗浄液の噴射を受けている時間が、ノズ
ルの各移動位置で略一定となるようになっており、ノズ
ルから噴射される洗浄液が直接半導体基板表面に当たり
洗浄している時間が回転中心近傍から周縁部に至るまで
略等しく、余分な洗浄を回避することができて洗浄時間
の無駄がなくなり、半導体基板の表面の洗浄が回転中心
近傍から周縁部まで短時間のうちに確実に行え、また余
分な洗浄を行うことなく短時間の内に洗浄が終わるた
め、多量の洗浄液を必要としないで済むことになる。According to the method of cleaning a semiconductor substrate having the above structure, when cleaning the surface of the rotating semiconductor substrate with the cleaning liquid sprayed from the nozzle moving in the radial direction of rotation, the surface of the semiconductor substrate is not sprayed with the cleaning liquid. The cleaning time is approximately constant at each movement position of the nozzle, and the cleaning liquid sprayed from the nozzle directly contacts the surface of the semiconductor substrate, and the cleaning time is substantially equal from the rotation center to the peripheral edge. The extra cleaning can be avoided, the cleaning time is not wasted, the surface of the semiconductor substrate can be reliably cleaned from the vicinity of the rotation center to the peripheral portion in a short time, and the cleaning can be performed without extra cleaning. Since the cleaning is completed within the time, it is not necessary to use a large amount of cleaning liquid.
【００１５】[0015]
【実施例】以下、本発明の一実施例を図１乃至図３を参
照して説明する。図１は洗浄装置の概略構成を示す側面
図であり、図２はノズルの移動速度を示す図であり、図
３は洗浄の概要を説明するために示す半導体基板の上面
図である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS. FIG. 1 is a side view showing a schematic configuration of a cleaning apparatus, FIG. 2 is a view showing a moving speed of a nozzle, and FIG. 3 is a top view of a semiconductor substrate shown for explaining an outline of cleaning.
【００１６】る。[0016]
【００１７】図１乃至図３において、１１は洗浄装置の
回転支持機構であり、この回転支持機構１１の垂直な回
転軸１２の上部には被洗浄物である半径ｒ0 の半導体基
板１３をその上面が水平になるよう支持する支持枠１４
が設けられている。そして回転軸１２は回転駆動部１５
によって所定の回転数Ｎ0 で回転するよう駆動される。In FIGS. 1 to 3, reference numeral 11 denotes a rotation support mechanism of the cleaning apparatus, and a semiconductor substrate 13 having a radius r 0 , which is an object to be cleaned, is provided on an upper portion of a vertical rotation shaft 12 of the rotation support mechanism 11. Support frame 14 that supports the upper surface to be horizontal
Is provided. The rotary shaft 12 is rotated by the rotary drive unit 15.
Is driven to rotate at a predetermined rotation speed N 0 .
【００１８】さらに、支持枠１４の上方には図示しない
供給源から液管１６を介し供給された洗浄液ｓを噴射す
るノズル１７が設けられている。このノズル１７は下部
が先細形状に形成されていて、その先端部には断面形状
が円形の噴射口１８が、支持枠１４に支持された半導体
基板１３の上面に対向するように設けられている。Further, a nozzle 17 for injecting the cleaning liquid s supplied from a supply source (not shown) via a liquid pipe 16 is provided above the support frame 14. A lower portion of the nozzle 17 is formed in a tapered shape, and an injection port 18 having a circular cross-sectional shape is provided at a tip portion thereof so as to face the upper surface of the semiconductor substrate 13 supported by the support frame 14. .
【００１９】また、ノズル１７には内部に超音波駆動部
１９によって駆動される超音波振動子２０が設けられ、
噴射口１８から噴射される洗浄液ｓに超音波振動が加え
られるようになっている。さらにノズル１７は図示しな
い直線駆動部によって、支持枠１４に支持された半導体
基板１３の回転中心の上方と周縁部の上方との範囲ｒ0
の間を半径方向に直線的に往復移動可能に設けられてい
る。An ultrasonic transducer 20 driven by an ultrasonic driving unit 19 is provided inside the nozzle 17,
Ultrasonic vibration is applied to the cleaning liquid s ejected from the ejection port 18. Further, the nozzle 17 has a range r 0 above the center of rotation and above the peripheral edge of the semiconductor substrate 13 supported by the support frame 14 by a linear drive unit (not shown).
Are provided so as to be linearly reciprocable in the radial direction.
【００２０】そして支持枠１４に支持された半導体基板
１３は、図２に示すように回転数Ｎ0 が変化するよう回
転駆動部１５によって制御される。すなわち、ノズル１
７が回転中心近傍に位置するときには定速で回転し、そ
の後中間部から周縁部に向けたノズル１７が移動すると
きには回転数Ｎ0 を直線的に減じるようになっている。The semiconductor substrate 13 supported by the support frame 14 is controlled by the rotation driving unit 15 so that the rotation speed N 0 changes as shown in FIG. That is, the nozzle 1
When 7 is located near the center of rotation, it rotates at a constant speed, and when the nozzle 17 moves from the intermediate portion toward the peripheral portion thereafter, the rotational speed N 0 is linearly reduced.
【００２１】この回転数Ｎ0 の直線的な減速は、ノズル
１７の回転中心からの位置が２倍となると回転数Ｎ0 が
１／２となるものである。なお、周縁部まで移動したノ
ズル１７は、回転中心方向に移動方向を逆転し比較的速
い定速度で回転中心近傍に戻り、再び周縁部方向への移
動を繰り返すようになっている。The linear deceleration of the rotational speed N 0, the rotational speed N 0 and is twice the position from the rotational center of the nozzle 17 is made 1/2. The nozzle 17, which has moved to the peripheral portion, reverses its moving direction in the direction of the rotation center, returns to the vicinity of the rotation center at a relatively constant speed, and repeats movement in the peripheral direction again.
【００２２】そして、回転中心から周縁部に向け定速度
で直線的に移動するノズル１７の噴射口１８から、回転
数Ｎ0 を変化させながら回転する半導体基板１３の上面
に向けて洗浄液ｓを噴射させ、半導体基板１３の上面の
洗浄を行うようになっている。このとき噴射口１８から
噴射された洗浄液は、半導体基板１３の上面の半径ｐ0
の円形領域に直接当たり、この円形領域が移動して行く
ことによって半導体基板１３の上面が液圧によって洗浄
される。Then, the cleaning liquid s is jetted from the jet port 18 of the nozzle 17 which linearly moves from the center of rotation toward the peripheral portion at a constant speed toward the upper surface of the semiconductor substrate 13 which rotates while changing the rotation speed N 0. Then, the upper surface of the semiconductor substrate 13 is cleaned. At this time, the cleaning liquid sprayed from the spray port 18 has a radius p 0 of the upper surface of the semiconductor substrate 13.
Directly hits the circular area and the upper surface of the semiconductor substrate 13 is cleaned by hydraulic pressure as the circular area moves.
【００２３】このような洗浄装置での半導体基板１３の
洗浄は次のようにして行われる。先ず、回転支持機構１
１の支持枠１４上に半導体基板１３をその上面が水平に
なるよう支持させる。そして回転駆動部１５によって支
持枠１４を回転させ、半導体基板１３を回転させる。The cleaning of the semiconductor substrate 13 with such a cleaning device is performed as follows. First, the rotation support mechanism 1
The semiconductor substrate 13 is supported on the first support frame 14 so that its upper surface is horizontal. Then, the support frame 14 is rotated by the rotation driving unit 15, and the semiconductor substrate 13 is rotated.
【００２４】続いて、半導体基板１３の回転中心上方に
位置させたノズル１７に供給源から液管１６を介し洗浄
液ｓを供給し、この洗浄液ｓに超音波駆動部１９によっ
て超音波振動子２０を駆動し超音波振動を与え噴射口１
８から噴射させる。これと同時にノズル１７を直線駆動
部によって回転中心から周縁部の半径方向に定速度で直
線的に移動させる。Subsequently, the cleaning liquid s is supplied from the supply source to the nozzle 17 located above the center of rotation of the semiconductor substrate 13 via the liquid pipe 16, and the ultrasonic transducer 20 is applied to the cleaning liquid s by the ultrasonic transducer 20. Driving and giving ultrasonic vibration, injection port 1
Eject from 8. At the same time, the nozzle 17 is linearly moved at a constant speed in the radial direction of the peripheral portion from the center of rotation by the linear drive unit.
【００２５】また、ノズル１７の移動に同期させて半導
体基板１３の回転数Ｎ0 を変化させる。ノズル１７が回
転中心からｐ0 の位置まで移動する間は一定の回転数Ｎ
0pで回転させる。その後中間部から周縁部に向けたノズ
ル１７の移動に同期させて直線的に減じ、周縁部に至っ
た時点での回転数をＮ0rとなるようにする。Further, the rotation speed N 0 of the semiconductor substrate 13 is changed in synchronization with the movement of the nozzle 17. While the nozzle 17 moves from the center of rotation to the position of p 0 , the rotation speed N is constant.
Rotate at 0p . Then, it is linearly reduced in synchronism with the movement of the nozzle 17 from the intermediate portion toward the peripheral portion, and the rotation speed at the time of reaching the peripheral portion is N 0r .
【００２６】この変速回転する半導体基板１３の上面
に、定速移動するノズル１７からの洗浄液ｓが半径ｐ0
の円形領域に当たり、この領域が半径方向に移動し、超
音波振動が与えられた洗浄液ｓの液圧によって半導体基
板１３の上面が洗浄される。洗浄は洗浄液ｓに超音波振
動が加えられているので、振動数に応じた所定の大きさ
までの微細粒子が確実に半導体基板１３の上面から除去
される。The cleaning liquid s from the nozzle 17 moving at a constant speed has a radius p 0 on the upper surface of the semiconductor substrate 13 which rotates at a variable speed.
This region moves in the radial direction, and the upper surface of the semiconductor substrate 13 is cleaned by the hydraulic pressure of the cleaning liquid s to which ultrasonic vibration is applied. Since ultrasonic vibration is applied to the cleaning liquid s during cleaning, fine particles up to a predetermined size corresponding to the frequency of vibration are reliably removed from the upper surface of the semiconductor substrate 13.
【００２７】また、半導体基板１３の回転数Ｎ0pから回
転数Ｎ0rまでの変速回転は、ノズル１７の回転中心から
の移動距離に反比例し、回転中心からの距離が２倍にな
るとその部分での回転数が１／２となるようになってお
り、ノズル１７の回転中心からの距離が変化してもその
位置でのノズル１７の移動速度と半導体基板１３の回転
方向の移動速度との積が略一定となっている。The variable speed rotation of the semiconductor substrate 13 from the rotation speed N 0p to the rotation speed N 0r is inversely proportional to the moving distance of the nozzle 17 from the rotation center, and when the distance from the rotation center doubles, that portion is changed. Is 1/2, and even if the distance from the center of rotation of the nozzle 17 changes, the product of the moving speed of the nozzle 17 at that position and the moving speed of the semiconductor substrate 13 in the rotating direction. Is almost constant.
【００２８】例えば、ノズル１７が等速度ｕ0 で移動
し、半導体基板１３の半径がｒ0aの円周上の点Ａ0 にノ
ズル１７が位置した時の半導体基板１３の回転数がＮ0a
であり、点Ａ0 の回転方向の移動速度がｖa であるとす
る。このときには半径がｒ0b＝２ｒ0aの円周上の点Ｂ0
の回転方向の移動速度は２ｖa となている。さらにノズ
ル１７が等速度ｕ0 で移動し、点Ｂ0 にノズル１７が位
置した時には半導体基板１３の回転数がＮ0b＝Ｎ0a／２
となるように制御されて、この点Ｂ0 の回転方向の移動
速度ｖb は、回転数がＮ0aの場合１／２となり、ｖb ＝
ｖa となる。そして、点Ａ0 の位置ではｖ0a×ｕ0 、点
Ｂ0 の位置ではｖb ×ｕ0 ＝ｖa ×ｕ0 となる。[0028] For example, the nozzle 17 is moved at a constant speed u 0, speed N 0a semiconductor substrate 13 when the radius of the semiconductor substrate 13 is positioned a nozzle 17 at a point A 0 on the circumference of r 0a
And the moving speed of the point A 0 in the rotation direction is v a . At this time, a point B 0 on the circumference having a radius of r 0b = 2r 0a
The moving speed of the rotating direction is Do and 2v a of. Further, when the nozzle 17 moves at a constant velocity u 0 and the nozzle 17 is located at the point B 0 , the rotation speed of the semiconductor substrate 13 is N 0b = N 0a / 2.
The moving speed v b of the point B 0 in the rotation direction becomes 1/2 when the rotation speed is N 0a , and v b =
v a . Then, v 0a × u 0 at the position of point A 0, a v b × u 0 = v a × u 0 at the position of point B 0.
【００２９】このため、ノズル１７から噴射された洗浄
液ｓが半導体基板１３の上面に当たっている時間、すな
わち半導体基板１３の上面の部位が噴射を受けている時
間は、回転中心近傍を除き半径方向の位置に拘らず略一
定となる。例えば半径がｒ0aの円周上の点Ａ0 にノズル
１７が移動した状態では、点Ａ0 は噴射口１８から噴射
された洗浄液ｓが半導体基板１３の上面に当たる半径ｐ
0 の円形領域を移動速度ｖa で横切る時間に略等しいｔ
0aだけ噴射を受けている。Therefore, the time during which the cleaning liquid s sprayed from the nozzle 17 is in contact with the upper surface of the semiconductor substrate 13, that is, the time during which the portion of the upper surface of the semiconductor substrate 13 is being sprayed is in the radial position except near the center of rotation. It becomes almost constant regardless of. For example, when the nozzle 17 moves to a point A 0 on the circumference having a radius of r 0a , the point A 0 is a radius p at which the cleaning liquid s ejected from the ejection port 18 hits the upper surface of the semiconductor substrate 13.
T, which is approximately equal to the time to cross the circular region of 0 at the moving speed v a
Only 0a is being jetted.
【００３０】これに対し、半径がｒ0b＝２ｒ0aの円周上
の点Ｂ0 にノズル１７が移動した状態では、半導体基板
１３の回転数がＮ0b＝Ｎ0a／２となり点Ａ0 の場合の１
／２であるため移動速度ｖb ＝ｖa となって、点Ｂ0 は
半径ｐ0 の円形領域を横切る時間に略等しいｔ0b＝ｔ0a
の噴射を受け、点Ｂ0 と点Ａ0 が洗浄液ｓの噴射を受け
ている時間は等しいものとなる。そして噴射口１８から
噴射された洗浄液ｓの円形領域の半径ｐ0 を考慮し、半
導体基板１３が噴射を受けている時間ｔ0a＝ｔ0bを所望
の洗浄結果が得られるよう適正に設定しておくことで、
ノズル１７を回転中心から周縁部に一度移動させること
で洗浄を終えることができる。On the other hand, when the nozzle 17 moves to the point B 0 on the circumference of the radius of r 0b = 2r 0a , the rotation speed of the semiconductor substrate 13 becomes N 0b = N 0a / 2, and the rotation speed of the point A 0 becomes. Case 1
/ 2 and is turned the moving speed v b = v a Therefore, the point B 0 substantially equal to the time across the circular area of radius p 0 is t 0b = t 0a
The point B 0 and the point A 0 are receiving the cleaning liquid s for the same period of time. Then, in consideration of the radius p 0 of the circular region of the cleaning liquid s ejected from the ejection port 18, the time t 0a = t 0b during which the semiconductor substrate 13 is being ejected is appropriately set to obtain a desired cleaning result. By putting
Cleaning can be completed by moving the nozzle 17 once from the center of rotation to the peripheral portion.
【００３１】周縁部まで移動し半導体基板１３の洗浄を
終えたノズル１７は、回転中心に移動し、再び支持枠１
４に新たに支持された半導体基板１３の洗浄を上記を繰
り返すことで実行する。The nozzle 17, which has moved to the peripheral portion and has finished cleaning the semiconductor substrate 13, moves to the center of rotation and again supports the support frame 1.
The cleaning of the semiconductor substrate 13 newly supported by No. 4 is performed by repeating the above.
【００３２】その結果、半導体基板１３の上面の洗浄
は、回転中心から周縁部までの洗浄がノズル１７の回転
中心から周縁部への片道移動によって確実に行われ、短
時間で終えることができる。また、洗浄に要する時間が
短くなることから、使用する洗浄液ｓも少量で済むこと
になる。As a result, the cleaning of the upper surface of the semiconductor substrate 13 can be completed in a short time because the cleaning from the center of rotation to the peripheral portion is surely performed by the one-way movement from the center of rotation of the nozzle 17 to the peripheral portion. Further, since the time required for cleaning is shortened, a small amount of cleaning liquid s can be used.
【００３３】尚、上記の実施例においてはノズル１７を
定速度で移動させた状態で、半導体基板１３の回転数Ｎ
0 をノズル１７の回転中心から移動距離に同期させ、中
間部から周縁部に向かって移動する間に直線的に減ずる
ものとしたが、半導体基板の回転数を一定にし、ノズル
１７の移動速度を回転中心から周縁部に向かって移動す
る間に略直線的に減ずるようにしてもよく、さらに半導
体基板１３の回転速度とノズル１７の移動速度の両者を
同期させるようにして変化させてもよい。また、速度の
変化をノズル１７の移動に合わせ直線的に行うようにし
ているが、２次曲線等のような連続曲線的に行うように
してもよい。In the above embodiment, the number of revolutions N of the semiconductor substrate 13 is changed with the nozzle 17 being moved at a constant speed.
Although 0 was synchronized with the movement distance from the rotation center of the nozzle 17 and linearly decreased while moving from the intermediate portion to the peripheral portion, the rotation speed of the semiconductor substrate was kept constant and the movement speed of the nozzle 17 was changed. It may be reduced substantially linearly while moving from the rotation center toward the peripheral portion, and both the rotation speed of the semiconductor substrate 13 and the movement speed of the nozzle 17 may be changed in synchronization. Further, although the change in speed is made linear in accordance with the movement of the nozzle 17, it may be made in a continuous curve such as a quadratic curve.
【００３４】[0034]
【発明の効果】以上の説明から明らかなように本発明
は、回転する半導体基板の表面を回転半径方向に移動す
るノズルから噴射された洗浄液によって洗浄する際、半
導体基板表面が洗浄液の噴射を受けている時間が、ノズ
ルの各移動位置で略一定となるようにしたことにより、
半導体基板表面の洗浄が短時間のうちに確実に行え、ま
た多量の洗浄液を必要としないでよい等の効果を奏す
る。As is apparent from the above description, according to the present invention, when cleaning the surface of a rotating semiconductor substrate with a cleaning liquid sprayed from a nozzle moving in the radial direction of rotation, the surface of the semiconductor substrate is not sprayed with the cleaning liquid. By making the time to be substantially constant at each movement position of the nozzle,
It is possible to surely clean the surface of the semiconductor substrate within a short time, and it is not necessary to use a large amount of cleaning liquid.
【図１】本発明の一実施例に係る洗浄装置の概略構成を
示す側面図である。FIG. 1 is a side view showing a schematic configuration of a cleaning device according to an embodiment of the present invention.
【図２】本発明の一実施例におけるノズルの移動速度を
示す図である。FIG. 2 is a diagram showing a moving speed of a nozzle in one embodiment of the present invention.
【図３】本発明の一実施例における洗浄の概要を説明す
るために示す半導体基板の上面図である。FIG. 3 is a top view of a semiconductor substrate shown for explaining an outline of cleaning in one embodiment of the present invention.
【図４】従来の洗浄装置の概略構成を示す側面図であ
る。FIG. 4 is a side view showing a schematic configuration of a conventional cleaning device.
【図５】従来技術における洗浄の概要を説明するために
示す半導体基板の上面図である。FIG. 5 is a top view of a semiconductor substrate shown for explaining an outline of cleaning in a conventional technique.
１１…回転支持機構 １３…半導体基板 １７…ノズル １８…噴射口 ２０…超音波振動子 ｓ…洗浄液 11 ... Rotation support mechanism 13 ... Semiconductor substrate 17 ... Nozzle 18 ... Jet port 20 ... Ultrasonic transducer s ... Cleaning liquid
Claims (5)
転半径方向に移動するノズルから洗浄液を噴射させて該
表面を洗浄する半導体基板の洗浄方法において、前記半
導体基板の表面が前記洗浄液の噴射を受けている時間
が、前記ノズルの各移動位置で略一定となるようにした
ことを特徴とする半導体基板の洗浄方法。1. A method for cleaning a semiconductor substrate in which a cleaning liquid is sprayed onto a surface of a semiconductor substrate that is rotatably supported by a nozzle that moves in a radial direction of rotation, and the surface of the semiconductor substrate is sprayed with the cleaning liquid. A method for cleaning a semiconductor substrate, wherein the time during which the nozzle is exposed is made substantially constant at each moving position of the nozzle.
を加えるようにしたことを特徴とする請求項１記載の半
導体基板の洗浄方法。2. The method for cleaning a semiconductor substrate according to claim 1, wherein ultrasonic cleaning is applied to the cleaning liquid sprayed from the nozzle.
の表面の中心部と周縁部の間を一度移動もしくは往復す
る間に該表面の洗浄が完了するものであることを特徴と
する請求項１記載の半導体基板の洗浄方法。3. A cleaning liquid sprayed from a nozzle completes the cleaning of the surface of the semiconductor substrate while the cleaning liquid once moves or reciprocates between the central portion and the peripheral portion of the surface. Method for cleaning semiconductor substrate.
ている時間が、半導体基板の回転数もしくはノズルの移
動速度の少なくとも一方を制御することによって調整さ
れていることを特徴とする請求項１記載の半導体基板の
洗浄方法。4. The time during which the surface of the semiconductor substrate is being sprayed with the cleaning liquid is adjusted by controlling at least one of the rotational speed of the semiconductor substrate and the moving speed of the nozzle. A method for cleaning a semiconductor substrate as described above.
動速度の少なくとも一方の制御が、前記ノズルの各移動
位置での該ノズルの移動速度と前記半導体基板の回転方
向の移動速度との積が略一定となるようにするものであ
ることを特徴とする請求項４記載の半導体基板の洗浄方
法。5. The control of at least one of the rotational speed of the semiconductor substrate and the moving speed of the nozzle is such that the product of the moving speed of the nozzle at each moving position of the nozzle and the moving speed of the semiconductor substrate in the rotating direction is substantially equal. The method for cleaning a semiconductor substrate according to claim 4, wherein the cleaning is performed so as to be constant.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28479094A JPH08148459A (en) | 1994-11-18 | 1994-11-18 | Cleaning method of semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28479094A JPH08148459A (en) | 1994-11-18 | 1994-11-18 | Cleaning method of semiconductor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08148459A true JPH08148459A (en) | 1996-06-07 |
Family
ID=17683061
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28479094A Pending JPH08148459A (en) | 1994-11-18 | 1994-11-18 | Cleaning method of semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08148459A (en) |
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| JP2002217159A (en) * | 2001-01-17 | 2002-08-02 | Sony Corp | Semiconductor substrate cleaning apparatus |
| WO2005119748A1 (en) * | 2004-06-04 | 2005-12-15 | Tokyo Electron Limited | Substrate cleaning method and computer readable recording medium |
| WO2006018948A1 (en) * | 2004-08-20 | 2006-02-23 | Aqua Science Corporation | Object processing device and its method |
| KR100568388B1 (en) * | 1997-07-23 | 2006-07-11 | 동경 엘렉트론 주식회사 | Substrate cleaning device and substrate cleaning method |
| CN100362629C (en) * | 2005-05-13 | 2008-01-16 | 中芯国际集成电路制造(上海)有限公司 | Method for cleaning semiconductor wafer |
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| WO2005119748A1 (en) * | 2004-06-04 | 2005-12-15 | Tokyo Electron Limited | Substrate cleaning method and computer readable recording medium |
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