JPS62173718A - Cleaning method for semiconductor wafer - Google Patents

Cleaning method for semiconductor wafer

Info

Publication number
JPS62173718A
JPS62173718A JP1464586A JP1464586A JPS62173718A JP S62173718 A JPS62173718 A JP S62173718A JP 1464586 A JP1464586 A JP 1464586A JP 1464586 A JP1464586 A JP 1464586A JP S62173718 A JPS62173718 A JP S62173718A
Authority
JP
Japan
Prior art keywords
semiconductor wafer
wafer
cleaning liquid
cleaning
cleaning fluid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1464586A
Other languages
Japanese (ja)
Inventor
Tetsuo Iwata
哲郎 岩田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP1464586A priority Critical patent/JPS62173718A/en
Publication of JPS62173718A publication Critical patent/JPS62173718A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To prevent the generation of the damage of a semiconductor wafer by ejecting cleaning fluid while a nozzle of cleaning fluid is moved slowly in the upper section of the peripheral section of the rotating semiconductor wafer and shifted fast in the central section of revolution. CONSTITUTION:A semiconductor wafer 11 is rotated at constant speed by a chuck 10. A pulse signal having predetermined device characteristics is transmit ted over a stepping motor 15, and a cleaning fluid such as high-pressure water 13 or the like is sprayed against the surface of the wafer 1 while a nozzle 14 of cleaning fluid is moved slowly in the peripheral section of the wafer 11 and shifted fast with an approach to the central section of the revolution of the wafer. Consequently, the cleaning fluid in uniforms quantity is sprayed against the whole surface of the wafer 11. Accordingly, the generation of the damage of the wafer 1 is prevented.

Description

【発明の詳細な説明】 口発明の目的〕 (産業上の利用分野) 本発明は、半導体ウェハの洗浄方法に関する。[Detailed description of the invention] Purpose of invention] (Industrial application field) The present invention relates to a method for cleaning semiconductor wafers.

(従来の技術) 従来、半導体ウェハの表面に付着したごみや不純物を除
去するために、第4図に示すような洗浄装装置を用いて
半導体ウェハの洗浄を行っている。図中1は、被処理体
の半導体ウェハ2を固着するチャックである。チャック
1は、その直下に接続されたモータ3により一定速度で
回転するようになっている。チャック1の上方には、洗
浄液である高圧水を噴出する洗浄液ノズル4が半導体ウ
ェハ2の上方を横切って往復動するように設けられてい
る。洗浄液ノズル4の往復動作は、第5図に示す定速度
回転のモータ5や図示しないシリンダによって行われる
ようになっている。
(Prior Art) Conventionally, semiconductor wafers have been cleaned using a cleaning device as shown in FIG. 4 in order to remove dust and impurities adhering to the surfaces of semiconductor wafers. In the figure, reference numeral 1 denotes a chuck for fixing a semiconductor wafer 2 as an object to be processed. The chuck 1 is rotated at a constant speed by a motor 3 connected directly below it. A cleaning liquid nozzle 4 that spouts high-pressure water as a cleaning liquid is provided above the chuck 1 so as to reciprocate across the top of the semiconductor wafer 2. The reciprocating movement of the cleaning liquid nozzle 4 is performed by a constant speed rotating motor 5 shown in FIG. 5 or a cylinder (not shown).

(発明が解決しようとする問題点) しかしながら、従来の方法によるものでは、第6図に示
す如く、半導体ウェハ2の上方を横切る洗浄液ノズル4
の移動速度は一定に設定されている。このため、回転す
る半導体ウェハ2の周速度は中心部より周辺部が大きい
から、中心部のB点近傍では、周辺部に比べて洗浄液ノ
ズル4が長時間に亘って対峙していることになる。その
結果、高圧水が半導体ウェハ2の中心部では他の領域よ
りも長時間当たるため、損傷が起き易い。また、半導体
ウエノ・2の表面全面に均一な洗浄処理を安定して施す
ことができない問題があった。
(Problems to be Solved by the Invention) However, in the conventional method, as shown in FIG.
The moving speed of is set constant. Therefore, since the peripheral speed of the rotating semiconductor wafer 2 is higher at the periphery than at the center, the cleaning liquid nozzle 4 faces the wafer for a longer period of time near point B at the center than at the periphery. . As a result, the high-pressure water hits the center of the semiconductor wafer 2 for a longer time than other areas, making it more likely to be damaged. Further, there was a problem in that it was not possible to stably and uniformly perform a cleaning treatment on the entire surface of the semiconductor wafer 2.

口発明の構成コ (問題点を解決するための手段) 本発明は、半導体ウエノ・を所定速度で回転させる工程
と、該半導体ウェハの外側から回転中心を通る軌跡で該
半導体ウェハの周辺部で遅く、かつ、中心部で速い移動
速度により洗浄液ノズルを被洗浄面である該半導体ウェ
ハの表面に対向させて移動しつつ該表面に前記洗浄液ノ
ズルから洗浄液を吹き付ける工程とを具備することを特
徴とする半導体ウェハの洗浄方法である。
Structure of the Invention (Means for Solving Problems) The present invention comprises a process of rotating a semiconductor wafer at a predetermined speed, and a process of rotating a semiconductor wafer from the outside of the semiconductor wafer with a trajectory passing through the center of rotation. A step of spraying the cleaning liquid from the cleaning liquid nozzle onto the surface of the semiconductor wafer, which is the surface to be cleaned, while moving the cleaning liquid nozzle to face the surface of the semiconductor wafer, which is the surface to be cleaned, at a slow moving speed and a high moving speed at the center. This is a method for cleaning semiconductor wafers.

ここで、洗浄液ノズルを可変の速度で駆動させる手段と
しては、ステッピングモータを用いて供給・セルス数を
変化させるもの等如何なるものでも良い。要は、回転す
る半導体ウェハの周速度の大きいところでは、遅い速度
で洗浄液ノズルを移動させ周速度の小さいところでは速
い速度で洗浄液ノズルを移動させるものであれば良い。
Here, as a means for driving the cleaning liquid nozzle at a variable speed, any means such as a means for changing the supply/cell number using a stepping motor may be used. In short, it is sufficient that the cleaning liquid nozzle is moved at a slow speed when the circumferential speed of the rotating semiconductor wafer is high, and at a high speed when the circumferential speed is low.

洗浄液ノズルから吹き付ける洗浄液は、高圧水、有機溶
剤等洗浄するごみの種類に応じて適宜選定するのが望ま
しい。
The cleaning liquid sprayed from the cleaning liquid nozzle is preferably selected as appropriate, such as high-pressure water or organic solvent, depending on the type of garbage to be cleaned.

(作用) 本発明に係る半導体ウェハの洗浄方法によれば、洗浄液
ノズルを回転する半導体ウェハの周辺部上方では遅く移
動させ、回転中心部では速く移動させながら洗浄液の噴
出を行うので、半導体ウェハの表面全面に亘って均一な
情で洗浄液を吹き付けることができる。その結果、半導
体ウェハに損傷が発生するのを防止して、がっ、効果的
な洗浄処理を安定して施すことができる。
(Function) According to the semiconductor wafer cleaning method of the present invention, the cleaning liquid nozzle is moved slowly above the periphery of the rotating semiconductor wafer and moved quickly above the rotating center while ejecting the cleaning liquid. The cleaning liquid can be sprayed evenly over the entire surface. As a result, it is possible to prevent damage to the semiconductor wafer and to stably perform an effective cleaning process.

(実施例) 以下、本発明の実施例について図面を参照して説明する
。第1図は、本発明方法により半導体ウェハを洗浄する
洗浄装置の説明図である。
(Example) Hereinafter, an example of the present invention will be described with reference to the drawings. FIG. 1 is an explanatory diagram of a cleaning apparatus for cleaning semiconductor wafers according to the method of the present invention.

図中10は、被処理体の半導体ウェハ11を固着するチ
ャックである。チャック10は、その直下に接続された
モータ12によって一定速度で回転するようになってい
る。チャック10の上方には、洗浄液である高圧水13
を噴出する洗浄液ノズル14が半導体ウェハ11の上方
をその回転中心点Cを経て横切って往復動するようにな
っている。洗浄液ノズル14の往復動作は、第2図に示
す如く、その移動速度を可変できるようにステッピング
モータ15にて行うようになっている。ステッピングモ
ータ15には、9りえば第3図(A)に示す如く、三角
駆動特性(1)に従って周速度の最も小さい半導体ウェ
ハ11の中心点Cで洗浄液ノズル14の移動速度が最大
となり、周速度の最も大きい半導体ウェハ1ノの周辺部
(A点、E点の近傍)では洗浄液ノズルJ4の移動速度
が最小となるように、所定の可変・!ルス信号が供給さ
れるようになっている。
In the figure, 10 is a chuck that fixes a semiconductor wafer 11 as an object to be processed. The chuck 10 is rotated at a constant speed by a motor 12 connected directly below it. Above the chuck 10, high-pressure water 13, which is a cleaning liquid, is provided.
A cleaning liquid nozzle 14 that spouts out a cleaning liquid nozzle 14 reciprocates above the semiconductor wafer 11 through its rotation center point C. As shown in FIG. 2, the reciprocating movement of the cleaning liquid nozzle 14 is performed by a stepping motor 15 so that its moving speed can be varied. As shown in FIG. 3(A), if the stepping motor 15 has nine steps, the moving speed of the cleaning liquid nozzle 14 becomes maximum at the center point C of the semiconductor wafer 11 where the circumferential speed is the smallest, according to the triangular drive characteristic (1), and the circumferential speed increases. A predetermined variable speed is set so that the moving speed of the cleaning liquid nozzle J4 is the minimum in the vicinity of the semiconductor wafer 1 where the speed is highest (near points A and E). signal is supplied.

ステッピングモータ15の駆動特性は、第3図中)に示
す如く、台形、駆動特性(It)を示すものであっても
良い。要は、周速度の小さい半導体ウェハ11の上方で
は洗浄液ノズル14を速く移動させ1周速度の大きい半
導体ウェハ11の周辺部では、洗浄液ノズル14をゆっ
くり移動させて、結果的に半導体ウニ6110表面の全
域に亘って一定の時間の間流浄液を噴出できるものであ
れば良い。
The driving characteristic of the stepping motor 15 may be a trapezoidal driving characteristic (It) as shown in FIG. 3). In short, the cleaning liquid nozzle 14 is moved quickly above the semiconductor wafer 11 where the circumferential speed is low, and the cleaning liquid nozzle 14 is moved slowly around the semiconductor wafer 11 where the circumferential speed is high. Any device that can eject flowing cleaning liquid for a certain period of time over the entire area may be used.

このように構成した洗浄装置により、先ず被処理体の半
導体ウェハ11をチャック1oによって一定速度で回転
させる。次いで、ステッピングモータ15に所定の駆動
特性をもった・Iルス信号を供給し、洗浄液ノズル14
を半導体ウェハ1ノの周辺部では遅く移動させ、かつ、
その回転中心部に近づくに従って速く移動させつつ、高
圧水13等の洗浄液を半導体ウェハ1ノの表面に吹き付
け、ごみ等の洗浄処理を行う。
In the cleaning apparatus configured as described above, first, the semiconductor wafer 11 as the object to be processed is rotated at a constant speed by the chuck 1o. Next, an I pulse signal having predetermined drive characteristics is supplied to the stepping motor 15, and the cleaning liquid nozzle 14 is
is moved slowly at the periphery of the semiconductor wafer 1, and
The cleaning liquid such as high-pressure water 13 is sprayed onto the surface of the semiconductor wafer 1 while moving it faster as it approaches the center of rotation to clean dust and the like.

このように本発明方法によれば、回転する半導体ウェハ
11の表面全面に均一な量の洗浄液を吹き付けることが
できる。その結果、半導体ウェハ1ノに損傷が発生する
のを防止して、かつ、効果的な洗浄処理を安定して施す
ことができる。
As described above, according to the method of the present invention, a uniform amount of cleaning liquid can be sprayed over the entire surface of the rotating semiconductor wafer 11. As a result, damage to the semiconductor wafer 1 can be prevented, and an effective cleaning process can be stably performed.

C発明の効果コ 以上説明した如く、本発明に係る半導体ウェハの洗浄方
法によれば、半導体ウエノ・の表面全面に亘って均一な
愈の洗浄液を吹き付けることにより、半導体ウェハに損
傷が発生するのを防止して、かつ効果的な洗浄処理を安
定して施すことができるものである。
C. Effects of the Invention As explained above, according to the semiconductor wafer cleaning method of the present invention, by spraying a uniform amount of cleaning liquid over the entire surface of the semiconductor wafer, damage to the semiconductor wafer can be prevented. It is possible to prevent this and to stably perform effective cleaning treatment.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は1本発明方法により半導体ウニノーを洗浄する
洗浄装置の説明図、第2図は、同洗浄装置における洗浄
液ノズルの動きを示す説明図、第3図及び第6図は、洗
浄液ノズルの移動速度と洗浄液ノズルの位置との関係を
示す特性図、第4図は、従来の方法により半導体ウェハ
を洗浄する洗浄装置の説明図、第5図は、同洗浄装置に
おける洗浄液ノズルの動きを示す説明図である。
Fig. 1 is an explanatory diagram of a cleaning device for cleaning a semiconductor unit by the method of the present invention, Fig. 2 is an explanatory diagram showing the movement of the cleaning liquid nozzle in the same cleaning device, and Figs. 3 and 6 are diagrams showing the movement of the cleaning liquid nozzle. A characteristic diagram showing the relationship between the moving speed and the position of the cleaning liquid nozzle, FIG. 4 is an explanatory diagram of a cleaning apparatus for cleaning semiconductor wafers by a conventional method, and FIG. 5 shows the movement of the cleaning liquid nozzle in the same cleaning apparatus. It is an explanatory diagram.

Claims (1)

【特許請求の範囲】[Claims] 半導体ウェハを所定速度で回転させる工程と、該半導体
ウェハの外側から回転中心を通る軌跡で該半導体ウェハ
の周辺部で遅く、かつ、中心部で速い移動速度により洗
浄液ノズルを被洗浄面である該半導体ウェハの表面に対
向させて移動しつつ該表面に前記洗浄液ノズルから洗浄
液を吹き付ける工程とを具備することを特徴とする半導
体ウェハの洗浄方法。
A step of rotating the semiconductor wafer at a predetermined speed, and moving a cleaning liquid nozzle onto the surface to be cleaned by moving the semiconductor wafer at a slower speed at the periphery and faster at the center with a trajectory passing from the outside of the semiconductor wafer through the center of rotation. A method for cleaning a semiconductor wafer, comprising the step of spraying a cleaning liquid from the cleaning liquid nozzle onto the surface of the semiconductor wafer while moving the semiconductor wafer in opposition to the surface.
JP1464586A 1986-01-28 1986-01-28 Cleaning method for semiconductor wafer Pending JPS62173718A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1464586A JPS62173718A (en) 1986-01-28 1986-01-28 Cleaning method for semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1464586A JPS62173718A (en) 1986-01-28 1986-01-28 Cleaning method for semiconductor wafer

Publications (1)

Publication Number Publication Date
JPS62173718A true JPS62173718A (en) 1987-07-30

Family

ID=11866929

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1464586A Pending JPS62173718A (en) 1986-01-28 1986-01-28 Cleaning method for semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS62173718A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010039409A2 (en) * 2008-10-01 2010-04-08 Applied Materials, Inc. Apparatus and method for cleaning semiconductor substrate using pressurized fluid
JP2013004705A (en) * 2011-06-16 2013-01-07 Ebara Corp Substrate processing method and substrate processing unit
US9799536B2 (en) 2005-02-07 2017-10-24 Planar Semiconductor, Inc. Apparatus and method for cleaning flat objects in a vertical orientation with pulsed liquid jet
US10179351B2 (en) 2005-02-07 2019-01-15 Planar Semiconductor, Inc. Method and apparatus for cleaning flat objects with pulsed liquid jet
KR20190104073A (en) * 2017-01-27 2019-09-05 티이엘 에프에스아이, 인코포레이티드 Systems and Methods for Rotating and Translation of Substrates in a Process Chamber
US11476129B2 (en) 2016-11-29 2022-10-18 Tel Manufacturing And Engineering Of America, Inc. Translating and rotating chuck for processing microelectronic substrates in a process chamber
US11545387B2 (en) 2018-07-13 2023-01-03 Tel Manufacturing And Engineering Of America, Inc. Magnetic integrated lift pin system for a chemical processing chamber

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9799536B2 (en) 2005-02-07 2017-10-24 Planar Semiconductor, Inc. Apparatus and method for cleaning flat objects in a vertical orientation with pulsed liquid jet
US10179351B2 (en) 2005-02-07 2019-01-15 Planar Semiconductor, Inc. Method and apparatus for cleaning flat objects with pulsed liquid jet
US10828677B2 (en) 2005-02-07 2020-11-10 Planar Semiconductor, Inc. Cleaning flat objects with a pulsed-liquid jet
WO2010039409A2 (en) * 2008-10-01 2010-04-08 Applied Materials, Inc. Apparatus and method for cleaning semiconductor substrate using pressurized fluid
WO2010039409A3 (en) * 2008-10-01 2010-05-20 Applied Materials, Inc. Apparatus and method for cleaning semiconductor substrate using pressurized fluid
US8844546B2 (en) 2008-10-01 2014-09-30 Applied Materials, Inc. Apparatus and method for cleaning semiconductor substrate using pressurized fluid
JP2013004705A (en) * 2011-06-16 2013-01-07 Ebara Corp Substrate processing method and substrate processing unit
US11476129B2 (en) 2016-11-29 2022-10-18 Tel Manufacturing And Engineering Of America, Inc. Translating and rotating chuck for processing microelectronic substrates in a process chamber
KR20190104073A (en) * 2017-01-27 2019-09-05 티이엘 에프에스아이, 인코포레이티드 Systems and Methods for Rotating and Translation of Substrates in a Process Chamber
JP2020505778A (en) * 2017-01-27 2020-02-20 ティーイーエル エフエスアイ,インコーポレイティド System and method for rotating and translating a substrate in a process chamber
US11458512B2 (en) 2017-01-27 2022-10-04 Tel Manufacturing And Engineering Of America, Inc. Systems and methods for rotating and translating a substrate in a process chamber
US11545387B2 (en) 2018-07-13 2023-01-03 Tel Manufacturing And Engineering Of America, Inc. Magnetic integrated lift pin system for a chemical processing chamber

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