JPH05275408A - Cleaning device for planar substrate - Google Patents

Cleaning device for planar substrate

Info

Publication number
JPH05275408A
JPH05275408A JP9720592A JP9720592A JPH05275408A JP H05275408 A JPH05275408 A JP H05275408A JP 9720592 A JP9720592 A JP 9720592A JP 9720592 A JP9720592 A JP 9720592A JP H05275408 A JPH05275408 A JP H05275408A
Authority
JP
Japan
Prior art keywords
wafer
cleaning
cleaning liquid
substrate
injection nozzle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP9720592A
Other languages
Japanese (ja)
Inventor
Satoshi Kobayashi
敏 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Nippon Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Corp filed Critical Nippon Steel Corp
Priority to JP9720592A priority Critical patent/JPH05275408A/en
Publication of JPH05275408A publication Critical patent/JPH05275408A/en
Withdrawn legal-status Critical Current

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  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To clean the whole surface of a planar substrate such as wafer uniformly and efficiently at the time of cleaning the substrate by injecting a cleaning solvent while rotating the planar substrate such as wafer. CONSTITUTION:A wafer 1 is held and rotated by a spin chuck 12 and a cleaning solvent 4 is injected to the surface of the wafer 1 by an injection nozzle 20 while the injection nozzle 20 is caused to travel in the manner of scanning the radial direction of the wafer 1. The rotational speed of the wafer 1 and the travelling speed of the injection nozzle 20 are related to each other and controlled by a controller 40. Also, an ultrasonic vibration is given by an ultrasonic generator 34 to the cleaning solvent 4 to be supplied to the injection nozzle 20. Thus, the whole surface of the wafer 1 is cleaned uniformly and efficiently.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、各種の平面状基板を回
転させながら洗浄液を噴射してその基板を洗浄する洗浄
装置に係り、例えば半導体基板であるウエハを洗浄する
のに最適な洗浄装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning device for spraying a cleaning liquid while rotating various types of flat substrates to clean the substrates, and for example, a cleaning device optimal for cleaning a wafer which is a semiconductor substrate. Regarding

【0002】[0002]

【従来の技術】半導体装置の製品歩留りは、各処理工程
におけるウエハへの塵埃等の付着によって左右されると
いっても過言ではない。このため、各処理工程の前後に
ウエハを各種の薬液や純水等の洗浄液によって充分に洗
浄する必要がある。このようなウエハ洗浄装置の一つと
して、従来から、ウエハを一枚ずつ洗浄する枚葉式の洗
浄装置が知られている。この枚葉式の洗浄装置は、洗浄
液が満たされた洗浄槽の中にウエハを一枚ずつ没入さ
せ、ウエハを洗浄液の中で浸漬や揺動させることによっ
て洗浄するものである。しかしながら、上記枚葉式の洗
浄装置においては、ウエハを洗浄液の中で浸漬や揺動さ
せるだけなので、洗浄効果が必ずしも充分ではなかっ
た。
2. Description of the Related Art It is no exaggeration to say that the product yield of semiconductor devices depends on the adhesion of dust or the like to the wafer in each processing step. Therefore, it is necessary to sufficiently clean the wafer before and after each processing step with various chemicals or cleaning solutions such as pure water. As one of such wafer cleaning apparatuses, conventionally, a single wafer cleaning apparatus for cleaning wafers one by one has been known. This single-wafer cleaning apparatus cleans a wafer by immersing the wafers one by one in a cleaning tank filled with a cleaning liquid and dipping or rocking the wafer in the cleaning liquid. However, in the above-mentioned single-wafer cleaning apparatus, the cleaning effect is not always sufficient because the wafer is only immersed or swung in the cleaning liquid.

【0003】そこで、図3に示すようなスピン枚葉式の
洗浄装置が提案されている。即ち、ウエハ1をスピンチ
ャック2によって保持して回転させ、そのウエハ1の表
面の中心部に向けて噴射ノズル3から洗浄液4を噴射す
るものである。これによれば、噴射された洗浄液4によ
ってウエハ1の表面が洗浄されるので、ウエハ1を洗浄
液の中で浸漬や揺動させる一般的な枚葉式洗浄に比較し
て、より効果的な洗浄を行うことができる。
Therefore, a spin single-wafer cleaning device as shown in FIG. 3 has been proposed. That is, the wafer 1 is held and rotated by the spin chuck 2, and the cleaning liquid 4 is sprayed from the spray nozzle 3 toward the center of the surface of the wafer 1. According to this, since the surface of the wafer 1 is cleaned by the sprayed cleaning liquid 4, the cleaning is more effective than the general single-wafer cleaning in which the wafer 1 is immersed or swung in the cleaning liquid. It can be performed.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、上述し
たような従来のスピン枚葉式の洗浄装置においては、洗
浄液4がウエハ1の表面の中心部のみに噴射され、外周
部では洗浄液4がウエハ1の回転の遠心力によって流動
するだけなので、半径方向の各位置で洗浄ムラが生じ易
いという問題があった。即ち、ウエハ1の回転によって
外周部ほど回転速度が大きくなるので、中心部へ噴射さ
れた洗浄液4は急激に外方へ飛散してしまう。しかも近
年はウエハ1が大径化する傾向にあるので、中心部と外
周部との回転速度差が大きくなり、洗浄ムラの発生がよ
り顕著になる。
However, in the conventional spin single-wafer cleaning apparatus as described above, the cleaning liquid 4 is sprayed only on the central portion of the surface of the wafer 1, and the cleaning liquid 4 is sprayed on the peripheral portion of the wafer 1. There is a problem that uneven cleaning is likely to occur at each position in the radial direction because it only flows due to the centrifugal force of the rotation. That is, as the wafer 1 rotates, the rotation speed increases toward the outer peripheral portion, so that the cleaning liquid 4 sprayed to the central portion is suddenly scattered outward. In addition, since the diameter of the wafer 1 tends to increase in recent years, the difference in rotational speed between the central portion and the outer peripheral portion increases, and the uneven cleaning becomes more noticeable.

【0005】なお、ウエハ1の外周部も充分に洗浄され
るように、洗浄液4の噴射時間を長くすると、洗浄時間
が長くなって作業効率が大幅に低下するという問題が生
じる。また、洗浄液4の噴射圧力を高くするには、噴射
ポンプとして高圧で大型のものが必要になるので、装置
全体の大型化並びにコスト高の原因となるという問題が
生じる。
If the cleaning liquid 4 is jetted for a long time so that the outer peripheral portion of the wafer 1 is also sufficiently washed, there arises a problem that the washing time becomes long and the working efficiency is significantly lowered. Further, in order to increase the injection pressure of the cleaning liquid 4, a high-pressure and large-sized injection pump is required, which causes a problem of increasing the size of the entire apparatus and increasing the cost.

【0006】そこで本発明は、例えばウエハ等の平面状
基板を回転させながら洗浄液を噴射してその基板を洗浄
する際に、基板の表面全体を均一にかつ効率よく洗浄す
ることができるようにした平面状基板の洗浄装置を提供
することを目的とする。
In view of the above, the present invention has made it possible to uniformly and efficiently clean the entire surface of a substrate when the cleaning liquid is sprayed while rotating a planar substrate such as a wafer. An object of the present invention is to provide a cleaning device for a flat substrate.

【0007】[0007]

【課題を解決するための手段】上記目的を達成するため
に、本発明による平面状基板の洗浄装置は、洗浄すべき
平面状基板をその面内において回転させる回転駆動手段
と、前記基板の表面に洗浄液を噴射する噴射ノズルと、
この噴射ノズルに洗浄液を所定の圧力で供給する洗浄液
供給手段と、前記噴射ノズルを前記基板の回転による半
径方向に沿って移動させる噴射ノズル移動手段とを具備
するものである。
In order to achieve the above object, a flat substrate cleaning apparatus according to the present invention comprises a rotation driving means for rotating a flat substrate to be cleaned in its plane, and a surface of the substrate. An injection nozzle that injects cleaning liquid into the
A cleaning liquid supply unit that supplies a cleaning liquid to the spray nozzle at a predetermined pressure and a spray nozzle moving unit that moves the spray nozzle along the radial direction of the rotation of the substrate are provided.

【0008】[0008]

【作用】上記のように構成された本発明によれば、回転
駆動手段によって平面状基板が回転され、噴射ノズル移
動手段によって噴射ノズルが基板の回転による半径方向
へ移動されながら、洗浄液供給手段によって供給された
洗浄液が噴射ノズルから基板の表面に噴射される。これ
によって、回転する基板の半径方向をスキャンするよう
に洗浄液が噴射されるので、その基板の表面全体が均一
にかつ効率よく洗浄される。
According to the present invention configured as described above, the flat substrate is rotated by the rotation driving means, and the jet nozzle moving means moves the jet nozzle in the radial direction by the rotation of the substrate, while the cleaning liquid supply means is used. The supplied cleaning liquid is sprayed from the spray nozzle onto the surface of the substrate. As a result, the cleaning liquid is sprayed so as to scan the rotating substrate in the radial direction, so that the entire surface of the substrate is uniformly and efficiently cleaned.

【0009】[0009]

【実施例】以下、本発明をウエハ洗浄装置に適用した一
実施例を図1及び図2を参照して説明する。図1は装置
全体の概略構成図、図2は噴射ノズル移動手段の概略斜
視図である。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment in which the present invention is applied to a wafer cleaning apparatus will be described below with reference to FIGS. FIG. 1 is a schematic configuration diagram of the entire apparatus, and FIG. 2 is a schematic perspective view of an injection nozzle moving means.

【0010】まず、図1に示すように、この洗浄装置1
0は、ウエハ1を洗浄カツプ11内において回転させな
がら、そのウエハ1の表面に洗浄液4を噴射して洗浄す
るように構成されている。洗浄カップ11は偏平円形状
に形成され、その内部にスピンチャック12が配置され
ている。スピンチャック12は、ウエハ1を真空吸着或
いは機械的に水平状に保持するものであり、洗浄カップ
11の下部を挿通する回転軸13の上端に固定されてい
る。そして、回転軸13即ちスピンチャック12は、モ
ータ14によって例えば200〜300rpm程度で回
転駆動される。
First of all, as shown in FIG.
0 is configured to spray the cleaning liquid 4 onto the surface of the wafer 1 for cleaning while rotating the wafer 1 in the cleaning cup 11. The cleaning cup 11 is formed in a flat circular shape, and the spin chuck 12 is arranged inside the cleaning cup 11. The spin chuck 12 holds the wafer 1 in a vacuum state or mechanically holds it horizontally, and is fixed to the upper end of a rotary shaft 13 that passes through the lower portion of the cleaning cup 11. Then, the rotation shaft 13, that is, the spin chuck 12 is rotationally driven by the motor 14 at, for example, about 200 to 300 rpm.

【0011】次に、洗浄カップ11の上部にはウエハ着
脱用の円形状の開口部15が設けられ、この開口部15
内に噴射ノズル20が挿入されて、ウエハ1の半径方向
である矢印a、b方向に往復移動自在に構成されてい
る。図2に示すように、噴射ノズル20はクランプ21
によって移動部材22の一端に垂直状に固定され、その
移動部材22はガイド部23によって長手方向(ウエハ
1の半径方向)に移動自在に支持されている。移動部材
22の上面にはラック24が形成され、このラック24
にモータ25によって回転駆動されるピニオン26が噛
合されている。従って、モータ25の正逆回転によっ
て、移動部材22即ち噴射ノズル20がウエハ1の半径
方向に沿って往復移動される。
Next, a circular opening 15 for attaching and detaching the wafer is provided on the upper portion of the cleaning cup 11, and this opening 15 is formed.
An injection nozzle 20 is inserted therein, and is configured to be reciprocally movable in the directions of arrows a and b which are the radial direction of the wafer 1. As shown in FIG. 2, the injection nozzle 20 has a clamp 21.
Is vertically fixed to one end of the moving member 22, and the moving member 22 is supported by a guide portion 23 so as to be movable in the longitudinal direction (radial direction of the wafer 1). A rack 24 is formed on the upper surface of the moving member 22.
A pinion 26 that is rotationally driven by a motor 25 is meshed with the. Therefore, the forward / reverse rotation of the motor 25 causes the moving member 22, that is, the injection nozzle 20 to reciprocate along the radial direction of the wafer 1.

【0012】そして、図1に示すように、上記噴射ノズ
ル20に洗浄液4を供給する洗浄液供給手段は、洗浄液
4を貯留するタンク31と、洗浄液4を加圧して配管3
2を介して噴射ノズル20に供給する噴射ポンプ33
と、その配管32の途中で洗浄液4に超音波振動を付与
する(乗せる)超音波ジェネレータ34とによって構成
されている。噴射ポンプ33は洗浄液4を例えば1〜2
kg/cm2 程度に加圧する。また、超音波ジェネレー
タ34は例えば30〜60kHzの超音波を発生して洗
浄液4に高周波振動を付与する。
As shown in FIG. 1, the cleaning liquid supply means for supplying the cleaning liquid 4 to the jet nozzle 20 has a tank 31 for storing the cleaning liquid 4 and a pipe 3 for pressurizing the cleaning liquid 4.
Injection pump 33 which supplies the injection nozzle 20 via 2
And an ultrasonic generator 34 that applies (places) ultrasonic vibration to the cleaning liquid 4 in the middle of the pipe 32. The injection pump 33 supplies the cleaning liquid 4 to, for example, 1-2.
Pressurize to about kg / cm 2 . Further, the ultrasonic generator 34 generates ultrasonic waves of 30 to 60 kHz, for example, and applies high frequency vibration to the cleaning liquid 4.

【0013】さらに、スピンチャック12を回転させる
モータ14と、噴射ノズル20を移動させるモータ25
とは、制御部40によって互いに関連して制御されるよ
うに構成されている。即ち、ウエハ1の回転速度は外周
部へ行くほど大きくなるので、その外周部へ行くほど噴
射ノズル20の移動速度が小さくなるように設定されて
いる。なお、制御部40は装置全体を統括制御するもの
でよく、上記噴射ポンプ33や超音波ジェネレータ34
等の作動制御もこの制御部40によって行うことができ
る。
Further, a motor 14 for rotating the spin chuck 12 and a motor 25 for moving the jet nozzle 20.
And are configured to be controlled in relation to each other by the control unit 40. That is, since the rotation speed of the wafer 1 increases toward the outer peripheral portion, the moving speed of the ejection nozzle 20 decreases toward the outer peripheral portion. The control unit 40 may be a unit that integrally controls the entire apparatus, and includes the injection pump 33 and the ultrasonic generator 34.
The operation control of the above can also be performed by the control unit 40.

【0014】上記のように構成された洗浄装置において
は、ウエハ1が図示しない把持手段によって把持されて
開口部15から洗浄カップ11内に挿入され、そのウエ
ハ1がスピンチャック12上に保持される。このとき噴
射ノズル移動手段は、ウエハ1と干渉しないように洗浄
カップ11の上方に退避されている。なお、スピンチャ
ック12に対するウエハ1の着脱は洗浄カップ11を上
下或いは左右に分割して行ってもよく、この場合には洗
浄カップ11の上部にスリット状の開口部を設けて噴射
ノズル20を挿通させるとよい。
In the cleaning apparatus configured as described above, the wafer 1 is held by the holding means (not shown) and inserted into the cleaning cup 11 through the opening 15, and the wafer 1 is held on the spin chuck 12. .. At this time, the spray nozzle moving means is retracted above the cleaning cup 11 so as not to interfere with the wafer 1. The wafer 1 may be attached to and detached from the spin chuck 12 by dividing the cleaning cup 11 into upper and lower parts or left and right parts. In this case, a slit-shaped opening is provided on the upper part of the cleaning cup 11 to insert the injection nozzle 20. You should let me.

【0015】ウエハ1がスピンチャック12上に保持さ
れた後、モータ14が回転されて、スピンチャック12
即ちウエハ1が回転駆動される。その回転が一定になる
と、噴射ポンプ33と超音波ジェネレータ34とが作動
されて、加圧されかつ超音波振動が付与された洗浄液4
が噴射ノズル20に供給されると共に、モータ25が回
転されて、噴射ノズル20が矢印a、b方向に往復移動
される。これによって、回転するウエハ1の半径方向を
スキャンするように噴射ノズル20が往復移動されなが
ら、超音波振動が付与された洗浄液4が噴射ノズル20
からウエハ1の表面に向かって噴射され、ウエハ1が洗
浄される。なお、洗浄後の洗浄液4は、洗浄カップ11
の下部に設けられた適宜個数の排出口16から洗浄カッ
プ11外に排出される。
After the wafer 1 is held on the spin chuck 12, the motor 14 is rotated and the spin chuck 12 is rotated.
That is, the wafer 1 is rotationally driven. When the rotation becomes constant, the injection pump 33 and the ultrasonic generator 34 are operated to pressurize and the ultrasonic vibration is applied to the cleaning liquid 4.
Is supplied to the injection nozzle 20, the motor 25 is rotated, and the injection nozzle 20 is reciprocated in the directions of arrows a and b. As a result, while the jet nozzle 20 is reciprocatingly moved so as to scan the rotating wafer 1 in the radial direction, the cleaning liquid 4 to which ultrasonic vibration is applied is ejected to the jet nozzle 20.
Is sprayed toward the surface of the wafer 1 to clean the wafer 1. The cleaning liquid 4 after cleaning is the cleaning cup 11
It is discharged to the outside of the cleaning cup 11 through an appropriate number of discharge ports 16 provided in the lower part of the.

【0016】このように、回転されるウエハ1の半径方
向をスキャンするように洗浄液4が噴射されるので、ウ
エハ1の半径方向の各位置に洗浄液4を直接当てること
ができ、ウエハ1の表面全体を極めて均一にかつ効率よ
く洗浄することができる。なお、噴射ノズル20の移動
は、ウエハ1や洗浄の種類に応じて、片道移動、往復移
動、さらに往復移動を繰り返してもよい。そして、ウエ
ハ1の中心部のみに洗浄液4を噴射する場合のように、
噴射時間を長くしたり噴射圧力を高くしたりする必要が
ないので、洗浄時間を大幅に短縮することができると共
に、噴射ポンプ33として低圧で小型のものを用いるこ
とができる。
As described above, since the cleaning liquid 4 is sprayed so as to scan the rotating wafer 1 in the radial direction, the cleaning liquid 4 can be directly applied to each position of the wafer 1 in the radial direction, and the surface of the wafer 1 is exposed. The whole can be washed extremely uniformly and efficiently. The movement of the spray nozzle 20 may be repeated by one-way movement, reciprocating movement, and reciprocating movement, depending on the type of the wafer 1 and cleaning. Then, as in the case of spraying the cleaning liquid 4 only on the central portion of the wafer 1,
Since it is not necessary to lengthen the injection time or increase the injection pressure, the cleaning time can be greatly shortened and the injection pump 33 can be a low pressure and small one.

【0017】また、ウエハ1の回転速度は外周部へ行く
ほど大きくなるので、噴射ノズル20の移動速度が一定
であると、外周部へ行くほど単位面積当りの洗浄液4の
被射量が少なくなる。そこで、制御部40によってウエ
ハ1の回転速度に関連させて噴射ノズル20の移動速度
を外周部へ行くほど遅くすることによって、ウエハ1の
半径方向の各位置において単位面積当りの洗浄液4の被
射量を一定にすることができる。
Further, since the rotation speed of the wafer 1 increases toward the outer peripheral portion, if the moving speed of the spray nozzle 20 is constant, the irradiation amount of the cleaning liquid 4 per unit area decreases toward the outer peripheral portion. .. Therefore, the control unit 40 slows the moving speed of the spray nozzle 20 in relation to the rotation speed of the wafer 1 toward the outer peripheral portion, so that the cleaning liquid 4 is sprayed per unit area at each position in the radial direction of the wafer 1. The amount can be constant.

【0018】さらに、噴射される洗浄液4に超音波振動
が付与されているので、その高周波振動によって、単な
る洗浄液4の噴射だけでは除去できないような微小粒子
まで除去することができると共に、洗浄液4のキャビテ
ーション発生も防止することができる。従って、ウエハ
1を不測に損傷させることなく極めて効果的な洗浄を行
うことができる。
Further, since ultrasonic vibration is applied to the cleaning liquid 4 to be sprayed, the high frequency vibration can remove fine particles which cannot be removed by merely spraying the cleaning liquid 4, and the cleaning liquid 4 can be removed. Occurrence of cavitation can also be prevented. Therefore, extremely effective cleaning can be performed without accidentally damaging the wafer 1.

【0019】なお、噴射ノズル20をウエハ1の半径方
向へ移動させる場合、噴射ノズル20をその上端部また
は中央部を中心として揺動させてもよいが、上記実施例
のように噴射ノズル20を垂直状態で移動させると、噴
射ノズル20とウエハ1との間の距離及びウエハ1に対
する噴射角度が常に一定になるので、洗浄液4を常に一
定の圧力及び量でウエハ1に当てることができ、より均
一な洗浄を行うことができる。
When the jet nozzle 20 is moved in the radial direction of the wafer 1, the jet nozzle 20 may be swung about the upper end portion or the central portion thereof, but the jet nozzle 20 may be moved as in the above embodiment. When moved in the vertical state, the distance between the spray nozzle 20 and the wafer 1 and the spray angle with respect to the wafer 1 are always constant, so that the cleaning liquid 4 can be constantly applied to the wafer 1 at a constant pressure and amount. Uniform cleaning can be performed.

【0020】以上、本発明の一実施例に付き説明した
が、本発明は上記実施例に限定されることなく、本発明
の技術的思想に基づいて各種の有効な変更並びに応用が
可能である。例えば、噴射ノズル移動手段の構成は実施
例以外に各種の構成を用いることができる。また本発明
は、ウエハ洗浄装置以外に各種の平面状基板の洗浄装置
に適用可能であり、その基板の形状も円形以外に矩形状
なども可能である。なお本発明でいう洗浄とは、必ずし
も基板に付着した塵埃等を除去するものに限らず、例え
ばエッチング処理等のような種々の薬液洗浄も含むもの
である。
Although one embodiment of the present invention has been described above, the present invention is not limited to the above embodiment, and various effective modifications and applications are possible based on the technical idea of the present invention. .. For example, various structures can be used as the structure of the ejection nozzle moving means other than the embodiment. Further, the present invention can be applied to various types of planar substrate cleaning apparatuses other than the wafer cleaning apparatus, and the shape of the substrate can be rectangular as well as circular. The term "cleaning" as used in the present invention is not limited to removing dust and the like adhering to the substrate, but also includes various chemical cleaning such as etching.

【0021】[0021]

【発明の効果】以上説明したように、本発明によれば、
平面状基板を回転させながら噴射ノズルから洗浄液を噴
射してその基板を洗浄する際に、噴射ノズルを基板の回
転による半径方向をスキャンするように移動させること
によって、その基板の表面全体を極めて均一にかつ効率
よく洗浄することができる。また、洗浄時間を大幅に短
縮することができると共に、洗浄液の噴射ポンプとして
低圧で小型のものを用いることができるので、洗浄効率
の大幅な向上と共に、装置全体の小型化並びに低コスト
化を図ることができる。
As described above, according to the present invention,
When cleaning the substrate by spraying the cleaning liquid from the spray nozzle while rotating the flat substrate, the spray nozzle is moved so as to scan in the radial direction due to the rotation of the substrate, so that the entire surface of the substrate is extremely uniform. It can be cleaned efficiently and efficiently. In addition, the cleaning time can be significantly shortened, and a low-pressure and small-sized cleaning liquid injection pump can be used. Therefore, the cleaning efficiency can be significantly improved, and the overall size and cost of the apparatus can be reduced. be able to.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明をウエハ洗浄装置に適用した一実施例に
おける装置全体の概略構成図である。
FIG. 1 is a schematic configuration diagram of an entire apparatus in an embodiment in which the present invention is applied to a wafer cleaning apparatus.

【図2】上記実施例における噴射ノズル移動手段の概略
斜視図である。
FIG. 2 is a schematic perspective view of an injection nozzle moving means in the above embodiment.

【図3】従来のスピン枚葉式のウエハ洗浄装置における
概略図である。
FIG. 3 is a schematic view of a conventional spin single wafer type wafer cleaning apparatus.

【符号の説明】[Explanation of symbols]

1 ウエハ 4 洗浄液 10 洗浄装置 11 洗浄カップ 12 スピンチャック 14 ウエハ回転用モータ 15 開口部 20 噴射ノズル 22 移動部材 25 ノズル移動用モータ 33 噴射ポンプ 34 超音波ジェネレータ 40 制御部 DESCRIPTION OF SYMBOLS 1 Wafer 4 Cleaning liquid 10 Cleaning device 11 Cleaning cup 12 Spin chuck 14 Wafer rotating motor 15 Opening 20 Injection nozzle 22 Moving member 25 Nozzle moving motor 33 Injection pump 34 Ultrasonic generator 40 Control unit

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 洗浄すべき平面状基板をその面内におい
て回転させる回転駆動手段と、前記基板の表面に洗浄液
を噴射する噴射ノズルと、この噴射ノズルに洗浄液を所
定の圧力で供給する洗浄液供給手段と、前記噴射ノズル
を前記基板の回転による半径方向に沿って移動させる噴
射ノズル移動手段とを具備する平面状基板の洗浄装置。
1. A rotary drive means for rotating a planar substrate to be cleaned in its plane, an injection nozzle for injecting a cleaning liquid onto the surface of the substrate, and a cleaning liquid supply for supplying the cleaning liquid to the injection nozzle at a predetermined pressure. An apparatus for cleaning a planar substrate, comprising: means and an ejection nozzle moving means for moving the ejection nozzle in a radial direction by rotation of the substrate.
【請求項2】 前記回転駆動手段による前記基板の回転
速度と、前記噴射ノズル移動手段による前記噴射ノズル
の移動速度とを、互いに関連させて制御する制御手段を
設けたことを特徴とする請求項1記載の平面状基板の洗
浄装置。
2. A control means for controlling the rotational speed of the substrate by the rotary drive means and the moving speed of the jet nozzle by the jet nozzle moving means in association with each other. 1. The flat substrate cleaning apparatus according to 1.
【請求項3】 前記洗浄液供給手段が、前記洗浄液に超
音波振動を付与するための超音波ジェネレータを有する
ことを特徴とする請求項1または2記載の平面状基板の
洗浄装置。
3. The planar substrate cleaning apparatus according to claim 1, wherein the cleaning liquid supply unit has an ultrasonic generator for applying ultrasonic vibration to the cleaning liquid.
JP9720592A 1992-03-24 1992-03-24 Cleaning device for planar substrate Withdrawn JPH05275408A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9720592A JPH05275408A (en) 1992-03-24 1992-03-24 Cleaning device for planar substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9720592A JPH05275408A (en) 1992-03-24 1992-03-24 Cleaning device for planar substrate

Publications (1)

Publication Number Publication Date
JPH05275408A true JPH05275408A (en) 1993-10-22

Family

ID=14186122

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9720592A Withdrawn JPH05275408A (en) 1992-03-24 1992-03-24 Cleaning device for planar substrate

Country Status (1)

Country Link
JP (1) JPH05275408A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10163153A (en) * 1996-11-29 1998-06-19 Tadahiro Omi Liquid-saving liquid-supply nozzle used for wet treatment including cleaning, etching, development, stripping, etc., as well as apparatus and method for wet treatment
JP2001319902A (en) * 2000-05-09 2001-11-16 Fujikoshi Mach Corp Wafer polishing apparatus
KR100396955B1 (en) * 1995-11-30 2003-11-10 오르가노 코포레이션 Wet treatment method
KR100464118B1 (en) * 1997-08-05 2005-06-17 동경 엘렉트론 주식회사 Substrate cleaning device and substrate cleaning method
WO2006040850A1 (en) * 2004-10-08 2006-04-20 Japan Science And Technology Agency Multivalent ion generation source and charged particle beam apparatus employing such generation source
JP2007289807A (en) * 2006-04-21 2007-11-08 Kaijo Corp Ultrasonic cleaning apparatus
KR100835516B1 (en) * 2003-12-23 2008-06-04 동부일렉트로닉스 주식회사 Megasonic cleaner for chemical mechanical polishing process and cleaning method using the same

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100396955B1 (en) * 1995-11-30 2003-11-10 오르가노 코포레이션 Wet treatment method
JPH10163153A (en) * 1996-11-29 1998-06-19 Tadahiro Omi Liquid-saving liquid-supply nozzle used for wet treatment including cleaning, etching, development, stripping, etc., as well as apparatus and method for wet treatment
KR100464118B1 (en) * 1997-08-05 2005-06-17 동경 엘렉트론 주식회사 Substrate cleaning device and substrate cleaning method
JP2001319902A (en) * 2000-05-09 2001-11-16 Fujikoshi Mach Corp Wafer polishing apparatus
JP4642183B2 (en) * 2000-05-09 2011-03-02 不二越機械工業株式会社 Wafer polishing equipment
KR100835516B1 (en) * 2003-12-23 2008-06-04 동부일렉트로닉스 주식회사 Megasonic cleaner for chemical mechanical polishing process and cleaning method using the same
WO2006040850A1 (en) * 2004-10-08 2006-04-20 Japan Science And Technology Agency Multivalent ion generation source and charged particle beam apparatus employing such generation source
JP2007289807A (en) * 2006-04-21 2007-11-08 Kaijo Corp Ultrasonic cleaning apparatus

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