JPH08139117A - Formation of enclosure for semiconductor device - Google Patents

Formation of enclosure for semiconductor device

Info

Publication number
JPH08139117A
JPH08139117A JP27075894A JP27075894A JPH08139117A JP H08139117 A JPH08139117 A JP H08139117A JP 27075894 A JP27075894 A JP 27075894A JP 27075894 A JP27075894 A JP 27075894A JP H08139117 A JPH08139117 A JP H08139117A
Authority
JP
Japan
Prior art keywords
frame
mold
envelope
elastic frame
elastic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP27075894A
Other languages
Japanese (ja)
Inventor
Tsutomu Seito
勉 清塘
Original Assignee
Toshiba Corp
株式会社東芝
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, 株式会社東芝 filed Critical Toshiba Corp
Priority to JP27075894A priority Critical patent/JPH08139117A/en
Publication of JPH08139117A publication Critical patent/JPH08139117A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a method for forming an enclosure of semiconductor device using a die having simple structure which can easily deal with an enclosure of different shape. CONSTITUTION: The sealed part of a semiconductor chip 27 or the like, mounted on a lead frame 28 is surrounded by upper and lower elastic frames 31, 24. A sealing resin 26 is fed to the inside and fused and then it is pressed and hardened by means of upper and lower dies 34, 23 while deforming the upper and lower elastic frames 31, 24 elastically in the vertical direction. When the supply of sealing resin 26 fluctuates, elastic deformation of the upper and lower elastic frames 31, 24 varies to absorb the fluctuation without requiring a die having intricate structure. Furthermore, an enclosure having different shape can be dealt with easily by replacing the upper and lower elastic frames 31, 24 with corresponding ones.

Description

【発明の詳細な説明】Detailed Description of the Invention
【0001】[0001]
【産業上の利用分野】本発明は、樹脂封止による半導体
装置の外囲器の形成方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming an envelope of a semiconductor device by resin sealing.
【0002】[0002]
【従来の技術】従来、樹脂封止された半導体装置は、リ
ードフレームやガラスエポキシ樹脂基板あるいはフィル
ム基板に半導体チップを搭載し電気的接続を行った後
に、外囲器がモールド金型を使用したトランスファー成
形や圧縮成形によって形成されていた。
2. Description of the Related Art Conventionally, in a resin-sealed semiconductor device, a semiconductor die is mounted on a lead frame, a glass epoxy resin substrate, or a film substrate, and electrical connection is made, and then an envelope uses a molding die. It was formed by transfer molding or compression molding.
【0003】すなわち、トランスファー成形は図6に示
すように、例えば半導体チップ1をリードフレーム2の
マウント部3に搭載し対応するリード部4との電気的接
続を行う。次に、半導体チップ1を搭載したリードフレ
ーム2をトランスファー成形機の外囲器形状が削設され
たモールド金型5にセットする。
That is, in transfer molding, as shown in FIG. 6, for example, the semiconductor chip 1 is mounted on the mount portion 3 of the lead frame 2 and electrically connected to the corresponding lead portion 4. Next, the lead frame 2 on which the semiconductor chip 1 is mounted is set in the molding die 5 in which the envelope shape of the transfer molding machine is cut.
【0004】この後、溶融した樹脂6をモールド金型5
内に成形機の射出部7から供給して硬化させる。そし
て、モールド金型5から外囲器が成形され樹脂封止され
た半導体装置を取り出すようにして成形は行われてい
た。
Thereafter, the molten resin 6 is poured into the molding die 5
It is supplied from the injection section 7 of the molding machine and cured. Then, the molding is performed so that the envelope is molded and the resin-sealed semiconductor device is taken out from the molding die 5.
【0005】また、圧縮成形は図7に示すように圧縮成
形機のモールド金型8が、成形機に固定され外囲器の上
下面を形成する上型9及び下型10と、成形機に発条1
1を介して取り付けられ外囲器の側面を形成する上側型
12及び下側型13とが形成されている。
In the compression molding, as shown in FIG. 7, the molding die 8 of the compression molding machine is fixed to the molding machine, and the upper die 9 and the lower die 10 which form the upper and lower surfaces of the envelope and the molding machine. Spring 1
An upper die 12 and a lower die 13 which are attached via 1 and form the side surface of the envelope are formed.
【0006】そして、半導体チップ1を搭載し電気的接
続がなされたリードフレーム2を、シート状樹脂14が
充填されたモールド金型8の下型10と下側型13にセ
ットする。続いてシート状樹脂14を半導体チップ1等
の上に被せた後、下型10と下側型13とを上昇させて
上型9と上側型12とに型合わせして所定外囲器形状が
得られるようにする。
Then, the lead frame 2 on which the semiconductor chip 1 is mounted and electrically connected is set in the lower mold 10 and the lower mold 13 of the molding die 8 filled with the sheet-shaped resin 14. Subsequently, after covering the semiconductor chip 1 or the like with the sheet-shaped resin 14, the lower mold 10 and the lower mold 13 are raised to match the upper mold 9 and the upper mold 12 to form a predetermined envelope shape. Get it.
【0007】次にシート状樹脂14を加熱し溶融させた
後、加圧、硬化させる。このとき充填したシート状樹脂
14の重量のばらつきは上型9及び下型10の間隔を調
節して吸収するようにしている。そして、モールド金型
8から外囲器が成形され樹脂封止された半導体装置を取
り出すようにして成形は行われていた。
Next, the sheet-shaped resin 14 is heated and melted, and then pressed and cured. At this time, the variation in the weight of the sheet-shaped resin 14 filled is absorbed by adjusting the interval between the upper mold 9 and the lower mold 10. Then, the molding is performed so that the envelope is molded and the resin-sealed semiconductor device is taken out from the molding die 8.
【0008】しかしながら上記の従来の各技術では、ト
ランスファ成形においては半導体装置の外囲器の形状に
応じてそれぞれ専用のモールド金型5を必要とし、その
モールド金型5は形状が複雑で制作に多くの日数を要す
ると共に型コストが高いものであった。またモールド金
型5は180度前後の温度に常時加熱した状態で使用さ
れるため、製造する半導体装置の品種切り換えで外囲器
形状が異なり別のモールド金型5に切り換える場合、成
形機から取り外す際の金型の冷却と取り付け後の加熱を
伴いモールド金型5の交換は大変な作業であり、交換時
間も長く要するものであった。
However, in each of the above-mentioned conventional techniques, a dedicated molding die 5 is required in accordance with the shape of the envelope of the semiconductor device in the transfer molding, and the molding die 5 has a complicated shape and is difficult to manufacture. It took many days and the mold cost was high. Further, since the molding die 5 is used while being constantly heated to a temperature of around 180 degrees, when the type of the semiconductor device to be manufactured has a different envelope shape and is switched to another molding die 5, it is removed from the molding machine. Replacing the mold 5 with the cooling of the mold and the heating after mounting was a difficult task and required a long replacement time.
【0009】また、圧縮成形においても半導体装置の外
囲器の形状に応じてそれぞれ専用のモールド金型8を必
要とする。さらにモールド金型8は、充填するシート状
樹脂14の重量ばらつきを外囲器の厚みを変えるように
して吸収する構造となるため、トランスファ成形のモー
ルド金型5よりも構造が複雑なものとなり、型コストも
高いものであった。
Also in compression molding, a dedicated molding die 8 is required depending on the shape of the envelope of the semiconductor device. Further, since the molding die 8 has a structure that absorbs the variation in weight of the sheet-shaped resin 14 to be filled by changing the thickness of the envelope, the molding die 8 has a more complicated structure than the molding die 5 for transfer molding. The mold cost was also high.
【0010】[0010]
【発明が解決しようとする課題】上記のように従来の技
術では、半導体装置の外囲器を形成するモールド金型は
形状に応じた専用のモールド金型を必要とし、その構造
は複雑なものとなていた。このような状況に鑑みて本発
明はなされたもので、その目的とするところは型構造が
簡単であって、製造する半導体装置の外囲器形状が異な
る場合でも容易に対応することができる半導体装置の外
囲器の形成方法を提供することにある。
As described above, in the conventional technique, the molding die for forming the envelope of the semiconductor device requires a dedicated molding die corresponding to the shape, and its structure is complicated. It was. The present invention has been made in view of such circumstances, and an object thereof is a semiconductor having a simple mold structure and capable of easily coping with a case where a semiconductor device to be manufactured has a different envelope shape. It is to provide a method of forming an envelope of a device.
【0011】[0011]
【課題を解決するための手段】本発明の半導体装置の外
囲器の形成方法は、半導体チップを含む封止部分を、封
止樹脂を成形することによって所定形状の外囲器により
封止するに際し、封止部分の周囲を弾性材料でなる枠で
囲うと共に該枠で囲まれた内側部分に封止樹脂を供給し
溶融状態とし、枠内に封止樹脂を閉じ込めるように設け
た金型により該枠を弾性変形させると共に該封止樹脂を
加圧硬化させることを特徴とするものであり、さらに、
枠が、弾性材料でなる複数の枠体を環状に配置して形成
されていることを特徴とするものであり、また、下金型
の上面に配置された下弾性枠の内側に封止樹脂を充填し
た後に該下弾性枠上に半導体チップが搭載されたリード
フレームを封止部分が内側に位置するよう載置し、さら
に封止部分の上側を囲うように上弾性枠を載置し該上弾
性枠の内側に封止樹脂を充填し該封止樹脂を溶融した
後、上弾性枠の上面に上金型の下面を当接し、その後に
下金型と上金型とで下弾性枠と上弾性枠とを圧縮し弾性
変形させると共に封止樹脂を加圧硬化させることを特徴
するものである。
According to a method of forming an envelope of a semiconductor device of the present invention, a sealing portion including a semiconductor chip is sealed with an envelope having a predetermined shape by molding a sealing resin. At this time, the sealing part is surrounded by a frame made of an elastic material, and the sealing resin is supplied to the inner part surrounded by the frame to be in a molten state, and the mold is provided so as to confine the sealing resin in the frame. It is characterized in that the frame is elastically deformed and the sealing resin is cured under pressure.
The frame is characterized in that it is formed by arranging a plurality of frame bodies made of an elastic material in an annular shape, and a sealing resin is provided inside the lower elastic frame arranged on the upper surface of the lower mold. After filling with, the lead frame on which the semiconductor chip is mounted is placed on the lower elastic frame so that the sealing portion is located inside, and the upper elastic frame is placed so as to surround the upper side of the sealing portion. After filling the sealing resin inside the upper elastic frame and melting the sealing resin, the lower surface of the upper mold is brought into contact with the upper surface of the upper elastic frame, and then the lower elastic frame is formed by the lower mold and the upper mold. The upper elastic frame is compressed and elastically deformed, and the sealing resin is cured under pressure.
【0012】[0012]
【作用】上記のように構成された半導体装置の外囲器の
形成方法は、半導体チップを含む封止部分の周囲を弾性
材料でなる枠で囲い、該枠の内側部分に封止樹脂を供給
して溶融状態とし、さらに枠内の封止樹脂を金型により
該枠を弾性変形させるようにしながら加圧硬化させるも
ので、封止樹脂の供給量がばらついた場合には、枠の弾
性変形量が変化することでばらつきを吸収することがで
き、複雑な型構造をとる必要が無く、また半導体装置の
品種の切り換え等で外囲器の形状が変わる場合には、そ
の外囲器に対応する枠に切り換えるのみでよいため、製
作容易な枠のみによって種々の異なる外囲器の形状に対
応することができる。さらに、外囲器の開発期間の短縮
や開発コストの低減が図れ、品種の切り換えも長時間を
要することなく簡単に行える。
According to the method of forming the envelope of the semiconductor device having the above structure, the sealing portion including the semiconductor chip is surrounded by the frame made of the elastic material, and the sealing resin is supplied to the inner portion of the frame. Then, it is melted, and the sealing resin in the frame is pressure-cured while the frame is elastically deformed by a mold. If the amount of the sealing resin supplied varies, the elastic deformation of the frame The variation can be absorbed by changing the quantity, and it is not necessary to have a complicated mold structure. Also, when the shape of the envelope changes due to the change of the type of semiconductor device, it corresponds to the envelope. Since it is only necessary to switch to the frame to be used, it is possible to cope with various different envelope shapes by using only the frame that is easy to manufacture. Further, the development period of the envelope can be shortened and the development cost can be reduced, and the type change can be easily performed without requiring a long time.
【0013】[0013]
【実施例】以下、本発明の実施例を図面を参照して説明
する。先ず、第1の実施例の圧縮成形による外囲器の形
成方法について図1乃至図4により説明する。図1は第
1の工程を示す側面図であり、図2は第2の工程を示す
図で、図2(a)は上面図、図2(b)は要部の側面図
であり、図3は第3の工程を示す側面図であり、図4は
第4の工程を示す側面図である。
Embodiments of the present invention will be described below with reference to the drawings. First, a method of forming an envelope by compression molding according to the first embodiment will be described with reference to FIGS. 1 is a side view showing the first step, FIG. 2 is a view showing the second step, FIG. 2 (a) is a top view, and FIG. 2 (b) is a side view of a main part. 3 is a side view showing the third step, and FIG. 4 is a side view showing the fourth step.
【0014】以下、外囲器の形成を工程順に説明する。
図1に示す第1の工程において、圧縮成形機の下基盤2
1に固定したモールド金型22の下型23上に、角環状
に形成した下弾性枠24を配置する。下弾性枠24は対
象とする半導体装置の外囲器の下側部分の形状、すなわ
ち封止部分の形状に合わせ、縦断面形状が方形状の例え
ばポリイミド樹脂等の耐熱性樹脂からなる4個の弾性枠
部材25を4隅部分に小間隙を設け角環状に配置して形
成してある。
The formation of the envelope will be described below in the order of steps.
In the first step shown in FIG. 1, the lower substrate 2 of the compression molding machine
The lower elastic frame 24 formed in a square ring shape is arranged on the lower mold 23 of the molding die 22 fixed to 1. The lower elastic frame 24 is made up of four heat-resistant resins, such as a polyimide resin, having a rectangular vertical cross-section according to the shape of the lower portion of the envelope of the target semiconductor device, that is, the shape of the sealing portion. The elastic frame member 25 is formed by arranging small gaps at four corners and arranging in a square ring shape.
【0015】そして下弾性枠24で囲まれた内側部分
に、外囲器の下側部分の容積に合わせ例えばエポキシ樹
脂等でなるシート状封止樹脂26aを所定量だけ充填す
る。なお、下型23は半導体装置の外囲器の下面を形成
し、下型23上の下弾性枠24は外囲器の下部側面を形
成する。
Then, the inner portion surrounded by the lower elastic frame 24 is filled with a predetermined amount of a sheet-shaped sealing resin 26a made of, for example, an epoxy resin or the like in accordance with the volume of the lower portion of the envelope. The lower die 23 forms the lower surface of the envelope of the semiconductor device, and the lower elastic frame 24 on the lower die 23 forms the lower side surface of the envelope.
【0016】一方、半導体チップ27をリードフレーム
28のマウント部29に搭載し対応するリード部30と
の電気的接続を行う。その後、半導体チップ27を搭載
したリードフレーム28を、内側にシート状封止樹脂2
6aが充填されている下弾性枠24上にリード部30が
配置されるように載置する。
On the other hand, the semiconductor chip 27 is mounted on the mount portion 29 of the lead frame 28 and electrically connected to the corresponding lead portion 30. After that, the lead frame 28 on which the semiconductor chip 27 is mounted is placed inside the sheet-shaped sealing resin 2
The lead portion 30 is placed on the lower elastic frame 24 filled with 6a.
【0017】次に、図2に示す第2の工程において、下
弾性枠体24の上面に載置されたリードフレーム28の
リード部30上に、下弾性枠24に対応させ外囲器の上
側部分の形状、すなわち半導体チップ27を含む封止部
分の形状に合わせて角環状に形成した上弾性枠31を配
置する。この上弾性枠31は外囲器の上部側面を形成す
るもので、下弾性枠24と同様にポリイミド樹脂等の耐
熱性樹脂からなる4個の弾性枠部材32を4隅部分に小
間隙を設け角環状に配置して形成してある。また下弾性
枠24の上面と上弾性枠31の下面との間には、図2
(b)に示すようにリード部30を挟持しない部分にリ
ード部30の厚さに相当する間隙が形成された状態とな
る。
Next, in the second step shown in FIG. 2, the upper portion of the envelope is made to correspond to the lower elastic frame 24 on the lead portion 30 of the lead frame 28 placed on the upper surface of the lower elastic frame body 24. An upper elastic frame 31 formed in a square ring shape is arranged according to the shape of the portion, that is, the shape of the sealing portion including the semiconductor chip 27. The upper elastic frame 31 forms the upper side surface of the envelope, and like the lower elastic frame 24, four elastic frame members 32 made of heat-resistant resin such as polyimide resin are provided with small gaps at the four corners. It is formed by arranging in a square ring shape. In addition, between the upper surface of the lower elastic frame 24 and the lower surface of the upper elastic frame 31, as shown in FIG.
As shown in (b), a gap corresponding to the thickness of the lead portion 30 is formed in a portion where the lead portion 30 is not sandwiched.
【0018】次に、図3に示す第3の工程において、上
弾性枠31で囲まれた内側部分に、外囲器の上側部分の
容積に合わせ例えばエポキシ樹脂等でなるシート状封止
樹脂26bを所定量だけ充填する。そして赤外線の照射
や高温の雰囲気に当てる等して下弾性枠24及び上弾性
枠31の内側に充填されたシート状封止樹脂26a,2
6bを加熱し、溶融状態の封止樹脂26とする。
Next, in a third step shown in FIG. 3, a sheet-shaped sealing resin 26b made of, for example, an epoxy resin is formed in the inner portion surrounded by the upper elastic frame 31 in accordance with the volume of the upper portion of the envelope. Is filled with a predetermined amount. Then, the sheet-like sealing resin 26a, 2 filled inside the lower elastic frame 24 and the upper elastic frame 31 by being irradiated with infrared rays or exposed to a high temperature atmosphere.
6b is heated to form the molten sealing resin 26.
【0019】次に、図4に示す第4の工程において、封
止樹脂26の加熱を停止し、圧縮成形機の下基盤21を
上昇させ、上基盤33に固定したモールド金型22の上
型34の下面を上弾性枠31の上面に当接させる。これ
により下型23と上型34の間に、半導体チップ27が
設けられたリードフレーム28を保持して下弾性枠24
と上弾性枠31が挟持される。なお、上型34は下型2
3に対応して半導体装置の外囲器の上面を形成する。
Next, in the fourth step shown in FIG. 4, the heating of the sealing resin 26 is stopped, the lower base 21 of the compression molding machine is raised, and the upper die of the molding die 22 fixed to the upper base 33. The lower surface of 34 is brought into contact with the upper surface of the upper elastic frame 31. As a result, the lead frame 28 having the semiconductor chip 27 is held between the lower mold 23 and the upper mold 34 to hold the lower elastic frame 24.
The upper elastic frame 31 is clamped. The upper mold 34 is the lower mold 2
The upper surface of the envelope of the semiconductor device is formed corresponding to 3.
【0020】続いて、さらに下型23を上昇させること
により下弾性枠24と上弾性枠31とを所定の外囲器形
状が得られる状態まで圧縮し弾性変形させる。そして、
下弾性枠24及び上弾性枠31内の封止樹脂26を加
圧、硬化させる。
Subsequently, the lower mold 23 is further raised to compress and elastically deform the lower elastic frame 24 and the upper elastic frame 31 until a predetermined envelope shape is obtained. And
The sealing resin 26 in the lower elastic frame 24 and the upper elastic frame 31 is pressed and cured.
【0021】その後、圧縮成形機の下基盤21を下降さ
せ、モールド金型22から下弾性枠24と上弾性枠31
とが付着したままの成形品を取り出し、さらに成形品か
ら下弾性枠24と上弾性枠31を外す。こうして外囲器
が成形され樹脂封止された半導体装置を得る。
After that, the lower base 21 of the compression molding machine is lowered, and the lower elastic frame 24 and the upper elastic frame 31 are moved from the molding die 22.
The molded product with and is attached is taken out, and the lower elastic frame 24 and the upper elastic frame 31 are removed from the molded product. Thus, a semiconductor device in which the envelope is molded and resin-sealed is obtained.
【0022】以上のような各工程を経て半導体装置の外
囲器の成形が行われるが、第4の工程における下弾性枠
24と上弾性枠31とを弾性変形させる過程では、下弾
性枠24及び上弾性枠31の内側に取り込まれた空気
が、下弾性枠24及び上弾性枠31の4隅部分の小間隙
や下弾性枠24と上弾性枠31間のリード部30の厚さ
に相当する間隙から外部に放出される。また、それぞれ
の間隙は下弾性枠24及び上弾性枠31が弾性変形し密
着して閉塞されるか、あるいは微小間隙となり溶融した
封止樹脂26が流れ込んで閉塞される。
Although the envelope of the semiconductor device is molded through the above-described steps, in the process of elastically deforming the lower elastic frame 24 and the upper elastic frame 31 in the fourth step, the lower elastic frame 24 is formed. The air taken into the upper elastic frame 31 corresponds to the small gaps at the four corners of the lower elastic frame 24 and the upper elastic frame 31 and the thickness of the lead portion 30 between the lower elastic frame 24 and the upper elastic frame 31. It is released to the outside from the gap. In addition, the respective gaps are closed due to the lower elastic frame 24 and the upper elastic frame 31 being elastically deformed and closely contacted with each other, or the gaps become minute gaps and the melted sealing resin 26 flows in and is closed.
【0023】そして、下弾性枠24及び上弾性枠31の
内側に充填されたシート状封止樹脂26a,26bの量
にばらつきが生じた場合には、そのばらつきは、下弾性
枠24と上弾性枠31が変形し下弾性枠24及び上弾性
枠31と下型23及び上型34による内側容積が変わる
ことによって吸収される。
When the amount of the sheet-shaped sealing resin 26a, 26b filled inside the lower elastic frame 24 and the upper elastic frame 31 is varied, the variation is caused by the lower elastic frame 24 and the upper elastic frame. The frame 31 is deformed, and the lower elastic frame 24 and the upper elastic frame 31, and the inner volumes of the lower mold 23 and the upper mold 34 are changed to be absorbed.
【0024】さらに、別の品種の半導体装置で外囲器の
形状が異なる場合には、外囲器の上下面を形成する下型
23及び上型34はそのまま同一のものを用い、外囲器
の側面を形成する比較的加工容易な耐熱性樹脂でなる下
弾性枠24、上弾性枠31を対象品種に応じて形成して
用いる。そして下型23と上型34の間隔を外囲器の厚
さに応じて調節し、所定量のシート状封止樹脂を充填す
るようにして上記と同様の工程により成形する。
Further, when the shape of the envelope is different for different types of semiconductor devices, the same lower mold 23 and upper mold 34 that form the upper and lower surfaces of the envelope are used as they are. The lower elastic frame 24 and the upper elastic frame 31 which are made of a heat-resistant resin and which form the side surfaces of the above are formed and used according to the target product type. Then, the distance between the lower mold 23 and the upper mold 34 is adjusted according to the thickness of the envelope, and a predetermined amount of the sheet-shaped sealing resin is filled, and molding is performed by the same process as above.
【0025】この結果、外囲器を形成するモールド金型
22は、簡単な形状の下型23及び上型34と、加工容
易な下弾性枠24及び上弾性枠31によってなり、さら
にシート状封止樹脂26a,26bの充填量のばらつき
が下弾性枠24と上弾性枠31の変形によって吸収され
るため、複雑な構造とならず型コストは安価なものとな
る。
As a result, the molding die 22 forming the envelope is composed of the lower mold 23 and the upper mold 34 having a simple shape, the lower elastic frame 24 and the upper elastic frame 31 which can be easily processed, and further the sheet-like sealing. Since the variation in the filling amount of the stopping resins 26a and 26b is absorbed by the deformation of the lower elastic frame 24 and the upper elastic frame 31, the structure does not become complicated and the die cost becomes low.
【0026】そして下弾性枠24と上弾性枠31を、製
造する半導体装置の外囲器形状に応じて種々用意するこ
とにより異なる外囲器の形状に対応することができ、ま
た外囲器開発に手間が掛からず開発期間の短縮や開発コ
ストの低減が図れる。さらに製造品種の切り換えに際し
ても、品種に対応する下弾性枠24や上弾性枠31を変
える等するだけでよく、切り換えが長時間を要すること
なく簡単に行え、製造途中でも素早く品種切り換えに対
応できる。
By preparing the lower elastic frame 24 and the upper elastic frame 31 variously according to the shape of the envelope of the semiconductor device to be manufactured, different envelope shapes can be accommodated, and the envelope development This saves time and effort, and shortens the development period and development costs. Further, even when the manufacturing type is changed, it is only necessary to change the lower elastic frame 24 and the upper elastic frame 31 corresponding to the type, the switching can be easily performed without requiring a long time, and the type can be quickly switched during the manufacturing. .
【0027】なお、上記の実施例では半導体チップ27
をリードフレーム28に搭載したものについて説明した
が、ガラスエポキシ基板やフィルム状基板に搭載したも
のであってもよい。さらに上記の実施例ではシート状封
止樹脂26a,26bを充填した後に溶融し外囲器を形
成したが、粉末状あるいは粒状封止樹脂を用いる等して
もよい。
The semiconductor chip 27 is used in the above embodiment.
Although the above is described as being mounted on the lead frame 28, it may be mounted on a glass epoxy substrate or a film substrate. Furthermore, in the above embodiment, the sheet-shaped sealing resins 26a and 26b were filled and then melted to form the envelope, but a powdery or granular sealing resin may be used.
【0028】次に、第2の実施例のトランスファ成形に
よる外囲器の形成方法について図5により説明する。図
5は封止樹脂の射出工程を示す側面図である。
Next, a method of forming an envelope by transfer molding according to the second embodiment will be described with reference to FIG. FIG. 5 is a side view showing the step of injecting the sealing resin.
【0029】図5において、41は下型42及び上型4
3を組み合わせてなるモールド金型で、下型42及び上
型43にはそれぞれ凹部44,45が削設されている。
これらの凹部44,45によって下型42と上型43を
組み合わせた際に外囲器を成形するための空所46が形
成される。
In FIG. 5, 41 is a lower mold 42 and an upper mold 4.
The lower mold 42 and the upper mold 43 are formed with recesses 44 and 45, respectively.
These recesses 44 and 45 form a cavity 46 for molding the envelope when the lower mold 42 and the upper mold 43 are combined.
【0030】そして空所46内には、製造する半導体装
置の外囲器形状に応じて角環状に形成した下弾性枠47
と上弾性枠48がそれぞれ凹部44,45内に配置され
ている。下弾性枠47と上弾性枠48はポリイミド樹脂
等の耐熱性樹脂からなり、その高さ寸法は凹部44,4
5の深さ寸法より大きなものとなっている。
In the space 46, a lower elastic frame 47 formed in a square ring shape according to the shape of the envelope of the semiconductor device to be manufactured.
And the upper elastic frame 48 are arranged in the recesses 44 and 45, respectively. The lower elastic frame 47 and the upper elastic frame 48 are made of a heat resistant resin such as a polyimide resin, and the height dimension thereof is the recesses 44, 4
It is larger than the depth dimension of 5.
【0031】このため、下型42と上型43を組み合わ
せた際には下弾性枠47の上面と上弾性枠48の下面の
間に、半導体チップ27を搭載したリードフレーム28
のリード部30を押圧するようにして挟持するようにな
っている。
Therefore, when the lower mold 42 and the upper mold 43 are combined, the lead frame 28 having the semiconductor chip 27 mounted between the upper surface of the lower elastic frame 47 and the lower surface of the upper elastic frame 48.
The lead portion 30 is pressed and held.
【0032】さらに空所46にはゲート49を介して射
出部50が接続され、外囲器の成形時には射出部50か
らゲート49を通じ空所46内に設けられた下弾性枠4
7と上弾性枠48の内側部分に例えばエポキシ樹脂等で
なる溶融状態の封止樹脂51が射出される。
Further, an injection part 50 is connected to the space 46 via a gate 49, and the lower elastic frame 4 provided in the space 46 through the gate 49 from the injection part 50 at the time of molding the envelope.
A molten sealing resin 51 made of, for example, an epoxy resin or the like is injected into the inner portion of the upper elastic frame 7 and the upper portion 7.
【0033】そして、このような型構造を有するモール
ド金型41によるトランスファ成形は次のように行われ
る。先ず、モールド金型41の下型42及び上型43の
凹部44,45内に、対象とする外囲器形状に応じた下
弾性枠47と上弾性枠48をセットする。
Then, transfer molding by the molding die 41 having such a mold structure is performed as follows. First, the lower elastic frame 47 and the upper elastic frame 48 according to the target envelope shape are set in the recesses 44 and 45 of the lower mold 42 and the upper mold 43 of the molding die 41.
【0034】次に、半導体チップ27を搭載したリード
フレーム28を下弾性枠47の上面と上弾性枠48の下
面の間にセットする。続いて下型42と上型43を組み
合わせ、リード部30を押圧するようにして挟持して所
定温度に保持する。
Next, the lead frame 28 on which the semiconductor chip 27 is mounted is set between the upper surface of the lower elastic frame 47 and the lower surface of the upper elastic frame 48. Subsequently, the lower mold 42 and the upper mold 43 are combined, and the lead portion 30 is sandwiched so as to be pressed and held at a predetermined temperature.
【0035】その後、射出部50からゲート49を介し
て下弾性枠47と上弾性枠48の内側部分に溶融状態の
封止樹脂51を射出し、下弾性枠47と上弾性枠48と
で囲まれた内側部分に充填された封止樹脂51を硬化さ
せる。そして下型42と上型43を離し、下弾性枠47
と上弾性枠48とが付着したままの成形品を取り出し、
さらに成形品から下弾性枠47と上弾性枠48を外す。
こうして外囲器が成形され樹脂封止された半導体装置を
得る。
Thereafter, the sealing resin 51 in a molten state is injected from the injection section 50 through the gate 49 into the inner portions of the lower elastic frame 47 and the upper elastic frame 48, and is surrounded by the lower elastic frame 47 and the upper elastic frame 48. The encapsulating resin 51 filled in the filled inner portion is cured. Then, the lower mold 42 and the upper mold 43 are separated, and the lower elastic frame 47
Take out the molded product with the upper elastic frame 48 attached and
Further, the lower elastic frame 47 and the upper elastic frame 48 are removed from the molded product.
Thus, a semiconductor device in which the envelope is molded and resin-sealed is obtained.
【0036】その結果、本実施例においても第1の実施
例と同様の作用、効果が得られる。
As a result, also in this embodiment, the same operation and effect as in the first embodiment can be obtained.
【0037】なお、上記の実施例では封止樹脂51をエ
ポキシ樹脂等で形成したが、熱可塑性樹脂を使用し、溶
融させた樹脂をモールド金型内に射出し充填した後に型
温度を冷却して樹脂を硬化させて樹脂封止された半導体
装置を得るようにしてもよい。
In the above embodiment, the sealing resin 51 was formed of epoxy resin or the like. However, a thermoplastic resin is used, and the melted resin is injected into the mold to fill it, and then the mold temperature is cooled. The resin may be cured to obtain a resin-sealed semiconductor device.
【0038】[0038]
【発明の効果】以上の説明から明らかなように本発明
は、半導体チップを含む封止部分の周囲を弾性材料でな
る枠で囲い、該枠の内側部分に封止樹脂を供給して溶融
状態とし、さらに枠内の封止樹脂を金型により該枠を弾
性変形させるようにしながら加圧硬化させる構成とした
ことにより、型構造が簡単であると共に容易に異なる形
状の外囲器の成形に対応することができる等の効果を奏
する。
As is apparent from the above description, according to the present invention, the sealing portion including the semiconductor chip is surrounded by a frame made of an elastic material, and the sealing resin is supplied to the inner portion of the frame to be in a molten state. In addition, since the sealing resin in the frame is pressure-cured while the frame is elastically deformed by a mold, the mold structure is simple and easy to mold envelopes of different shapes. There is an effect such as being able to cope.
【図面の簡単な説明】[Brief description of drawings]
【図1】本発明の第1の実施例における第1の工程を示
す側面図である。
FIG. 1 is a side view showing a first step in the first embodiment of the present invention.
【図2】本発明の第1の実施例における第2の工程を示
す図で、図2(a)は上面図、図2(b)は要部の側面
図である。
FIG. 2 is a diagram showing a second step in the first embodiment of the present invention, FIG. 2 (a) is a top view and FIG. 2 (b) is a side view of a main part.
【図3】本発明の第1の実施例における第3の工程を示
す側面図である。
FIG. 3 is a side view showing a third step in the first embodiment of the present invention.
【図4】本発明の第1の実施例における第4の工程を示
す側面図である。
FIG. 4 is a side view showing a fourth step in the first embodiment of the present invention.
【図5】本発明の第2の実施例における封止樹脂の射出
工程を示す側面図である。
FIG. 5 is a side view showing a step of injecting a sealing resin in the second embodiment of the present invention.
【図6】従来のトランスファー成形の概略を示す図であ
る。
FIG. 6 is a diagram showing an outline of conventional transfer molding.
【図7】従来の圧縮成形の概略を示す図である。FIG. 7 is a diagram showing an outline of conventional compression molding.
【符号の説明】[Explanation of symbols]
22…モールド金型 23…下型 24…下弾性枠 26…封止樹脂 27…半導体チップ 28…リードフレーム 31…上弾性枠 34…上型 22 ... Mold die 23 ... Lower mold 24 ... Lower elastic frame 26 ... Sealing resin 27 ... Semiconductor chip 28 ... Lead frame 31 ... Upper elastic frame 34 ... Upper mold

Claims (3)

    【特許請求の範囲】[Claims]
  1. 【請求項1】 半導体チップを含む封止部分を、封止樹
    脂を成形することによって所定形状の外囲器により封止
    するに際し、前記封止部分の周囲を弾性材料でなる枠で
    囲うと共に該枠で囲まれた内側部分に封止樹脂を供給し
    溶融状態とし、前記枠内に前記封止樹脂を閉じ込めるよ
    うに設けた金型により該枠を弾性変形させると共に該封
    止樹脂を加圧硬化させることを特徴とする半導体装置の
    外囲器の形成方法。
    1. When a sealing portion including a semiconductor chip is sealed with an envelope having a predetermined shape by molding a sealing resin, the sealing portion is surrounded by a frame made of an elastic material, and The sealing resin is supplied to the inner portion surrounded by the frame to be in a molten state, and the frame is elastically deformed by a mold provided so as to confine the sealing resin in the frame and the sealing resin is pressure-cured. A method of forming an envelope of a semiconductor device, comprising:
  2. 【請求項2】 枠が、弾性材料でなる複数の枠体を環状
    に配置して形成されていることを特徴とする請求項1記
    載の半導体装置の外囲器の形成方法。
    2. The method for forming an envelope of a semiconductor device according to claim 1, wherein the frame is formed by arranging a plurality of frame bodies made of an elastic material in an annular shape.
  3. 【請求項3】 下金型の上面に配置された下弾性枠の内
    側に封止樹脂を充填した後に該下弾性枠上に半導体チッ
    プが搭載されたリードフレームを封止部分が内側に位置
    するよう載置し、さらに前記封止部分の上側を囲うよう
    に上弾性枠を載置し該上弾性枠の内側に封止樹脂を充填
    し該封止樹脂を溶融した後、前記上弾性枠の上面に上金
    型の下面を当接し、その後に前記下金型と前記上金型と
    で前記下弾性枠と前記上弾性枠とを圧縮し弾性変形させ
    ると共に前記封止樹脂を加圧硬化させることを特徴とす
    る半導体装置の外囲器の形成方法。
    3. A lower elastic frame disposed on the upper surface of the lower mold is filled with a sealing resin, and then a lead frame having a semiconductor chip mounted on the lower elastic frame is sealed inside. And then the upper elastic frame is placed so as to surround the upper side of the sealing portion, the inside of the upper elastic frame is filled with the sealing resin, and the sealing resin is melted. The lower surface of the upper mold is brought into contact with the upper surface, and thereafter, the lower mold and the upper mold are compressed and elastically deformed by the lower mold and the upper mold, and the sealing resin is pressure-cured. A method of forming an envelope of a semiconductor device, comprising:
JP27075894A 1994-11-04 1994-11-04 Formation of enclosure for semiconductor device Pending JPH08139117A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27075894A JPH08139117A (en) 1994-11-04 1994-11-04 Formation of enclosure for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27075894A JPH08139117A (en) 1994-11-04 1994-11-04 Formation of enclosure for semiconductor device

Publications (1)

Publication Number Publication Date
JPH08139117A true JPH08139117A (en) 1996-05-31

Family

ID=17490584

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27075894A Pending JPH08139117A (en) 1994-11-04 1994-11-04 Formation of enclosure for semiconductor device

Country Status (1)

Country Link
JP (1) JPH08139117A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006070197A (en) * 2004-09-03 2006-03-16 Kyocera Chemical Corp Compression molding resin composition, resin sealed semiconductor device and its manufacturing method
WO2014123196A1 (en) * 2013-02-08 2014-08-14 日東電工株式会社 Method for manufacturing semiconductor device
JP2015153757A (en) * 2014-02-10 2015-08-24 アサヒ・エンジニアリング株式会社 Resin molding device and method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006070197A (en) * 2004-09-03 2006-03-16 Kyocera Chemical Corp Compression molding resin composition, resin sealed semiconductor device and its manufacturing method
WO2014123196A1 (en) * 2013-02-08 2014-08-14 日東電工株式会社 Method for manufacturing semiconductor device
JP2015153757A (en) * 2014-02-10 2015-08-24 アサヒ・エンジニアリング株式会社 Resin molding device and method

Similar Documents

Publication Publication Date Title
JP4336499B2 (en) Resin sealing molding method and apparatus for electronic parts
US6261501B1 (en) Resin sealing method for a semiconductor device
US4900485A (en) Method and apparatus for transfer molding
JP2003174124A (en) Method of forming external electrode of semiconductor device
US6444500B1 (en) Split-mold and method for manufacturing semiconductor device by using the same
CN104112679B (en) resin encapsulation equipment and resin encapsulation method
US5043199A (en) Resin tablet for plastic encapsulation and method of manufacturing of plastic encapsulation using the resin tablet
US20130140737A1 (en) Stacked substrate molding
JPH08139117A (en) Formation of enclosure for semiconductor device
US3397429A (en) Pressure-molding apparatus
CN107437510A (en) Resin seal product manufacture method and resin sealing apparatus
KR102266607B1 (en) Resin molding apparatus and method for manufacturing resin molded article
US3352953A (en) Pressure-molding method
JP2019111692A (en) Resin molding apparatus and method of manufacturing resin molded article
JP2004103917A (en) Method for molding flip chip mold and molding die for injecting resin
JPH05138691A (en) Mold for injection molding of liquid resin
JP2666630B2 (en) Method for manufacturing semiconductor device
KR101964034B1 (en) Molding system for applying a uniform clamping pressure onto a substrate
KR102259426B1 (en) Compression molding apparatus, compression molding method, and manufacturing method of compression molded products
JPH06254910A (en) Resin sealing mold for electronic part
JP3999909B2 (en) Resin sealing device and sealing method
JPH06126771A (en) Resin mold
JPH1022314A (en) Die for sealing semiconductor with resin
JP3543742B2 (en) Resin sealing molding equipment
JPS62145751A (en) Semiconductor device