JPH08107176A - Semiconductor device - Google Patents

Abstract

PURPOSE: To prevent tie leads from touching the end of a semiconductor chip by moving the leads due to a resin being charged. CONSTITUTION: A semiconductor device has a die pad 2 which mounts a semiconductor chip 1, tie lead supporting pad 4 coupled with the pad 2 and disposed around this pad at a higher position than it, TAB leads 9 supported with the pad 4 wherein one end of each lead 9 is connected to an electrode pad 11, and inner leads 6 connected to the other ends of the leads 9. Since the pad 4 is held higher than the pad 2, the leads 9 moves due to the charging of a resin so as to prevent them from touching the end 1A of the chip 1.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a technique effective when applied to a semiconductor device manufactured using a semiconductor chip having electrode pads formed at a fine pitch.

[0002]

2. Description of the Related Art In recent semiconductor devices represented by LSIs, the demands for miniaturization, high integration, and multi-functionality are increasing more and more. It is formed with a finer pitch.
Further, in response to such a semiconductor chip, a lead frame on which the semiconductor chip is mounted tends to have a multi-pin structure with a finer pitch.

Such a lead frame having a fine pitch and a large number of pins is disclosed in, for example, "VLSI Packaging Technology (above)", published by Nikkei BP, May 31, 1993, P157. The lead frame disclosed in this document has a shape in which a die pad (tab) for mounting a semiconductor chip is provided in the central portion and a large number of inner leads are arranged at a fine pitch around the die pad. There is. Here, the die pad is supported by the lead frame main body by tab suspension, and the many inner leads are supported by the lead frame main body by the dam.

Between the electrode pad of the semiconductor chip mounted on the die pad of the lead frame and the corresponding inner lead, wire bonding using a gold wire or the like is performed, and then the semiconductor chip is mounted. The die pad, bonding wires, and inner leads are sealed in a resin package by the transfer molding method. Then, after sealing, the unnecessary lead frame body is cut, and the outer leads connected to the inner leads are molded to be suitable for mounting.

As a package technology corresponding to such a lead frame having a fine pitch and a large number of pins, Q
FP (Quad Flat Package) or SOP (Small Outline Package)
e) is known. As an example, issued by Nikkei BP,
"VLSI Packaging Technology (above)", May 1993.
Issued March 31st, P78 shows the structure of the SOP which copes with such a lead frame.

Further, as a semiconductor device manufactured by using a semiconductor chip in which electrode pads are formed with such a fine pitch, "VLSI Packaging Technology (above)", published by Nikkei BP, May 31, 1993. Issued, TAB (Tape Automated) as described in P79
TCP (TapeCa) using Bonding tape
The rrier package) structure is known. The above-mentioned document “VLSI packaging technology (bottom)”, 199.
Issued May 31, 2013, P167, such TAB
TAB-FP (Flat Pack) manufactured by using
age) is shown. In this TAB-FP, TA
The B lead connects the electrode pad of the semiconductor chip to the inner lead. These TAB lead and bonding wire act as a connecting lead that connects the electrode pad of the semiconductor chip and the inner lead.

[0007]

When a semiconductor device is manufactured using a lead frame having a fine pitch and a large number of pins as described above, or a semiconductor device is manufactured using a TAB tape, the transfer molding method is used. There is a problem that when the resin is filled with the resin, the bonding wire or the TAB lead connected between the electrode pad of the semiconductor chip and the inner lead is changed by the resin and comes into contact with the end of the semiconductor chip to cause a short circuit defect.

That is, as shown in FIG. 9, the electrode pad 31 of the semiconductor chip 21 mounted on the die pad 22.
When the bonding wire 33 is connected between the inner lead 25 and the inner lead 25, if the resin is filled as shown by the arrow for sealing, the bonding wire 33 is pushed toward the semiconductor chip 21 by the resin and fluctuates. As a result, there is a case where the semiconductor chip 21 comes into contact with the end 21A. Alternatively, as shown in FIG.
Similar to the bonding wire 33 of FIG. 9, the TAB lead 39 is pushed in the direction of the semiconductor chip 21 and fluctuates, so that the end 21A of the semiconductor chip 21 may come into contact with the semiconductor chip 21.

It is an object of the present invention to provide a semiconductor device which prevents contact leads from fluctuating due to the resin and coming into contact with the ends of the semiconductor chip when the resin is filled.

The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

[0011]

Among the inventions disclosed in the present application, the outline of typical ones will be briefly described as follows.

The semiconductor device of the present invention includes a die pad on which a semiconductor chip is mounted, a connecting lead supporting pad which is connected to the die pad and is arranged at a position higher than the die pad, and the connecting lead supporting pad. In a supported state, one end has a connecting lead connected to the electrode pad of the semiconductor chip, and an inner lead connected to the other end of the connecting lead.

[0013]

According to the above-mentioned means, the semiconductor device of the present invention includes a die pad on which a semiconductor chip is mounted, a connecting lead supporting pad which is arranged around the die pad and which is arranged at a position higher than the die pad. Since the contact lead has one end connected to the electrode pad of the semiconductor chip and the inner lead connected to the other end of the contact lead while being supported by the contact lead support pad, Since the lead support pad is held higher than the die pad, it is possible to prevent the contact lead from fluctuating due to the resin when the resin is filled and coming into contact with the end portion of the semiconductor chip.

[0014]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a partially cutaway perspective view showing a main part of a semiconductor device according to an embodiment of the present invention, and an example applied to a QFP has been described. FIG. 2 is an enlarged sectional view showing the portion A of FIG. For example, around the die pad 2 on which the semiconductor chip 1 made of an Fe—Ni alloy material is mounted, a connecting lead supporting pad 4 connected to the die pad 2 by a tab suspension 3 is arranged at a position higher than the die pad 2. . In addition, an inner lead 6 connected to the contact lead supporting pad 4 by a tab suspension 5 is arranged around the contact lead supporting pad 4 at an intermediate height position between the die pad 2 and the contact lead supporting pad 4. Has been done. Outer leads 7 are connected to the ends of the inner leads 6.

A TAB tape 8 is used in an intermediate portion between the semiconductor chip 1 and the inner leads 6, and one end of the TAB tape 8 of the TAB tape 8 is supported by the connecting lead supporting pad 4 while the TAB tape 9 is supported by the connecting lead supporting pad 4. And the other end is connected to the inner lead 6. That is, the TAB lead 9 acts as a connecting lead between the electrode pad 11 of the semiconductor chip 1 and the inner lead 6. The TAB lead 9 is fixed to an insulating film 10 such as polyimide. The TAB tape 8 is merely supported by the connecting lead supporting pad 4, and is not adhered.

The die pad 2 on which the semiconductor chip 1 is mounted, the connecting lead supporting pads 3, the TAB tape 8 and the inner leads 6 are sealed by a resin package 12 by a transfer molding method. The outer leads 7 connected to the inner leads 6 are exposed to the outside of the package 12 and are used as terminals for mounting on various wiring boards.

Next, a method of manufacturing the semiconductor device of this embodiment will be described.

First, as shown in FIG. 3, a lead frame 13 formed into a desired pattern by a processing means such as an etching method or a pressing method is prepared using a plate material made of a Fe--Ni alloy material. That is, the die pad 2,
Connecting lead supporting pad 4 connected to the periphery of the die pad 2 by a tab suspension 3, inner leads 6 connected to the periphery of the connecting lead supporting pad 4 by a tab suspension 5, and an outer connected to the inner lead 6. The lead 7 is formed. Each inner lead 6 is connected to a lead frame body 15 by a dam 14. Note that the number of inner leads 6 is shown as an example of four in order to simplify the description.

Next, as shown in FIG. 4, the connecting lead supporting pad 4 is formed on the lead frame 13 at a position higher than the die pad 2, and the inner lead 5 is formed on the die pad 2 and the connecting lead supporting pad 4. Mold so that it will be at an intermediate height position. This molding method can be easily realized by the pressing method.

Subsequently, as shown in FIG. 5, the semiconductor chip 1 is mounted on the die pad 2 by die bonding. This is done using a suitable braze material such as a gold-silicon eutectic alloy, silver braze.

On the other hand, as shown in FIG. 6, a TAB tape 8 having a desired pattern is prepared. That is, TA fixed to the insulating film 10 such as polyimide
The B lead 9 is formed into a desired pattern. The TAB lead 9 is made of a conductive material such as copper and is formed with a fine pitch corresponding to the fine pitch of the electrode pads of the semiconductor chip by a processing means by an etching method. In addition,
The number of TAB leads 9 is shown as an example of four.

Next, as shown in FIG. 7, the lead frame 13 of FIG. 5 and the TAB tape 8 of FIG. 6 are integrated with each other, and one end of the TAB lead 9 of the TAB tape 8 is connected to the semiconductor chip 2. The other end is connected to the inner lead 6 while being connected to the electrode pad 11. This connection method can be performed by a thermocompression bonding method or the like.

Then, as shown in FIG. 8, the lead frame 13 in which the TAB tape 8 is integrated is set between the upper mold 17 and the lower mold 18 of the transfer molding apparatus,
Resin is filled into the cavity 20 from the gate 19 and transfer molding is performed. As a result, as shown in FIG. 1, the die pad 2 on which the semiconductor chip 1 is mounted,
A semiconductor device is obtained in which the connecting lead support pad 4, the TAB tape 8 and the inner lead 6 are sealed by the resin package 12.

According to such an embodiment, the following effects can be obtained.

The contact lead supporting pad 4 is the die pad 2
Since it is held higher, the electrode pad 11 of the semiconductor chip 1 is filled at the time of resin filling by the transfer molding method.
Since the TAB lead 9 connected between the inner lead 6 and the inner lead 6 does not change due to the resin, it is possible to prevent the TAB lead 9 from contacting the end portion 1A of the semiconductor chip 1. Therefore, a short circuit defect does not occur.

As described above, the invention made by the present inventor is
Although the present invention has been specifically described based on the above-mentioned embodiments, the present invention is not limited to the above-mentioned embodiments, and it goes without saying that various modifications can be made without departing from the scope of the invention.

For example, in the above-described embodiment, the example in which the TAB lead is used as the connecting lead has been described, but the same effect can be obtained by applying the bonding wire as the connecting lead.

Further, the material forming the die pad and the contact lead supporting pad or the material forming the contact lead is not limited to those shown in the embodiments, and any material can be selected.

In the above description, the case where the invention made by the present inventor is mainly applied to the manufacturing technology of the semiconductor device which is the field of application which is the background of the invention has been described, but the invention is not limited thereto. The present invention is applicable at least under the condition of manufacturing a semiconductor device using a semiconductor chip having electrode pads formed at a fine pitch.

[0031]

The effects obtained by the typical ones of the inventions disclosed in the present application will be briefly described as follows.

It is possible to prevent the contact lead from changing due to the resin when it is filled with the resin and coming into contact with the end portion of the semiconductor chip.

[Brief description of drawings]

FIG. 1 is a partially cutaway perspective view showing a main part of a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view showing an enlarged part A of FIG.

FIG. 3 is a plan view showing a lead frame used in a method for manufacturing a semiconductor device according to an embodiment of the present invention.

FIG. 4 is a cross-sectional view showing a step of the method of manufacturing the semiconductor device according to the embodiment of the present invention.

FIG. 5 is a sectional view showing another step of the method for manufacturing the semiconductor device according to the embodiment of the present invention.

FIG. 6 is a plan view showing a TAB tape used in a method of manufacturing a semiconductor device according to an embodiment of the present invention.

FIG. 7 is a cross-sectional view showing another step of the method for manufacturing the semiconductor device according to the embodiment of the present invention.

FIG. 8 is a cross-sectional view showing another step of the method for manufacturing the semiconductor device according to the embodiment of the present invention.

FIG. 9 is a sectional view illustrating a defect of a conventional semiconductor device.

FIG. 10 is a sectional view illustrating a defect of another conventional semiconductor device.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Semiconductor chip, 1A ... End of semiconductor chip, 2 ... Die pad, 3, 5 ... Tab suspension, 4 ... Communication lead support pad, 6 ... Inner lead, 7 ... Outer lead, 8 ...
TAB tape, 9 ... TAB lead, 10 ... Insulating film, 11 ... Semiconductor chip electrode pad, 12 ... Resin package, 13 ... Lead frame, 14 ... Dam, 15 ...
Lead frame body, 17 ... upper mold, 18 ... lower mold, 19 ...
Gate, 20 ... cavity.

Claims (5)

[Claims] A die pad on which a semiconductor chip is mounted;
A contact lead supporting pad which is connected to the periphery of the die pad and is arranged at a higher position than the die pad, and a contact whose one end is connected to the electrode pad of the semiconductor chip while being supported by the contact lead supporting pad. A semiconductor device having a lead and an inner lead connected to the other end of the connecting lead. 2. The semiconductor device according to claim 1, wherein the connecting lead is supported by the connecting lead supporting pad via an insulating film. 3. The semiconductor device according to claim 1, wherein the connecting lead is a TAB lead. 4. The semiconductor device according to claim 1, wherein the die pad and the contact lead supporting pad are divided from the same member. 5. The die pad on which the semiconductor chip is mounted, the connecting lead supporting pad, the connecting lead, and the inner lead are encapsulated by a resin package, according to any one of claims 1 to 4. The semiconductor device according to.