JPH0795563B2 - パスゲートマルチプレクサレシーバ集積回路 - Google Patents

パスゲートマルチプレクサレシーバ集積回路

Info

Publication number
JPH0795563B2
JPH0795563B2 JP2411551A JP41155190A JPH0795563B2 JP H0795563 B2 JPH0795563 B2 JP H0795563B2 JP 2411551 A JP2411551 A JP 2411551A JP 41155190 A JP41155190 A JP 41155190A JP H0795563 B2 JPH0795563 B2 JP H0795563B2
Authority
JP
Japan
Prior art keywords
pass gate
integrated circuit
transistor
field effect
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2411551A
Other languages
English (en)
Japanese (ja)
Other versions
JPH04114465A (ja
Inventor
ポール マスレイド ロバート
フルック セクラー ロバート
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPH04114465A publication Critical patent/JPH04114465A/ja
Publication of JPH0795563B2 publication Critical patent/JPH0795563B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/998—Input and output buffer/driver structures

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2411551A 1990-01-29 1990-12-18 パスゲートマルチプレクサレシーバ集積回路 Expired - Lifetime JPH0795563B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US471893 1990-01-29
US07/471,893 US5036215A (en) 1990-01-29 1990-01-29 Pass gate multiplexer receiver circuit

Publications (2)

Publication Number Publication Date
JPH04114465A JPH04114465A (ja) 1992-04-15
JPH0795563B2 true JPH0795563B2 (ja) 1995-10-11

Family

ID=23873406

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2411551A Expired - Lifetime JPH0795563B2 (ja) 1990-01-29 1990-12-18 パスゲートマルチプレクサレシーバ集積回路

Country Status (3)

Country Link
US (1) US5036215A (en:Method)
EP (1) EP0440331A2 (en:Method)
JP (1) JPH0795563B2 (en:Method)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5200907A (en) * 1990-04-16 1993-04-06 Tran Dzung J Transmission gate logic design method
US5111069A (en) * 1990-08-27 1992-05-05 Dallas Semiconductor Corporation Layout of integrated circuit with very large transistors
JP3375659B2 (ja) * 1991-03-28 2003-02-10 テキサス インスツルメンツ インコーポレイテツド 静電放電保護回路の形成方法
US5519355A (en) * 1992-11-19 1996-05-21 At&T Global Information Solutions Company High speed boundary scan multiplexer
US5453719A (en) * 1993-12-17 1995-09-26 Nec Corporation Oscillator circuit generating oscillation signal responsive to one of resonant element and external clock signal
US5543650A (en) * 1995-01-12 1996-08-06 International Business Machines Corporation Electrostatic discharge protection circuit employing a mosfet device
US5815354A (en) * 1997-03-21 1998-09-29 International Business Machines Corporation Receiver input voltage protection circuit
US6028758A (en) * 1998-01-16 2000-02-22 Vantis Corporation Electrostatic discharge (ESD) protection for a 5.0 volt compatible input/output (I/O) in a 2.5 volt semiconductor process
US6219812B1 (en) * 1998-06-11 2001-04-17 Sun Microsystems, Inc. Apparatus and method for interfacing boundary-scan circuitry with DTL output drivers
US6380022B1 (en) * 2000-04-20 2002-04-30 Hewlett-Packard Company Method for creating a useful biopolar junction transistor from a parasitic bipolar junction transistor on a MOSFET
US6362653B1 (en) 2001-02-06 2002-03-26 International Business Machines Corporation High voltage tolerant receivers
KR100468787B1 (ko) * 2003-05-02 2005-01-29 삼성전자주식회사 래치-업(Ｌａｔｃｈ-ｕｐ)에 의한 전류 흐름을 방지할 수있는 반도체 장치
US8230281B2 (en) * 2009-04-13 2012-07-24 Altera Corporation Techniques for boundary scan testing using transmitters and receivers
US8482029B2 (en) * 2011-05-27 2013-07-09 Infineon Technologies Austria Ag Semiconductor device and integrated circuit including the semiconductor device
US11211342B1 (en) * 2020-07-21 2021-12-28 Taiwan Semiconductor Manufacturing Company Ltd. Multiplexer cell and semiconductor device having camouflage design, and method for forming multiplexer cell

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4286173A (en) * 1978-03-27 1981-08-25 Hitachi, Ltd. Logical circuit having bypass circuit
US4763020B1 (en) * 1985-09-06 1997-07-08 Ricoh Kk Programmable logic device having plural programmable function cells
JPS62220879A (ja) * 1986-03-22 1987-09-29 Hitachi Ltd 半導体装置
US4710649A (en) * 1986-04-11 1987-12-01 Raytheon Company Transmission-gate structured logic circuits
JP2679046B2 (ja) * 1987-05-22 1997-11-19 ソニー株式会社 メモリ装置
JPS63300529A (ja) * 1987-05-29 1988-12-07 Nec Corp 半導体集積回路
US4755696A (en) * 1987-06-25 1988-07-05 Delco Electronics Corporation CMOS binary threshold comparator
JPH0196573A (ja) * 1987-10-08 1989-04-14 Matsushita Electron Corp 集積回路
JPH01130554A (ja) * 1987-11-17 1989-05-23 Fujitsu Ltd 静電保護回路
JPH0671203B2 (ja) * 1987-12-23 1994-09-07 株式会社東芝 論理回路

Also Published As

Publication number Publication date
EP0440331A3 (en:Method) 1994-02-02
EP0440331A2 (en) 1991-08-07
US5036215A (en) 1991-07-30
JPH04114465A (ja) 1992-04-15

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