JPH0793254B2 - Method for treating substrate for forming resist film - Google Patents

Description

Description: TECHNICAL FIELD The present invention relates to a silicon substrate used in a manufacturing process of a semiconductor integrated circuit, a silicon substrate having a surface treated (oxide film, polysilicon film, nitride film, etc.), or a photo The present invention relates to a treatment method of an adhesion enhancer used when a resist film is applied to a glass substrate (a substrate in which quartz or the like is surface-treated with chromium, chromium oxide or the like) used in a mask manufacturing process.

2. Description of the Related Art In the photoetching process, a resist is applied to a substrate to form a thin film, and ultraviolet rays are applied to this film by an aligner to form a circuit element pattern. Next, the substrate is selectively etched using this formation pattern. This etching is usually performed by wet etching using a chemical or dry etching using a gas phase chemical reaction.

If the adhesion of the resist film to the substrate is weak, the resist film is peeled off from the substrate when forming a resist pattern or during etching, which causes a defect. This pattern defect becomes more remarkable as the product becomes finer.

In order to strengthen the adhesion between the substrate and the resist film, there is a method of removing the OH group by reacting with an OH group on the surface of the substrate with an adhesion enhancer such as hexamethyldisilazane.

The method for applying the adhesion enhancer is usually as shown in FIG.
A method of applying a thin coating on the surface of a substrate using a spinner is used. This method, as shown in FIG.
This is a method in which the adhesion strengthening agent 2 is dropped from the tip of the nozzle 1 onto the surface of the silicon substrate 3 and is rotated by a spinner 4 as shown in FIG.

Problems to be Solved by the Invention When coating with a spinner, a large amount of adhesion enhancer is necessary, and the applied adhesion enhancer remains thick, resulting in insufficient adhesion strengthening.

Means for Solving the Problems The present invention relates to a method for treating a substrate for forming a resist film, which is carried out by using a treatment apparatus in which a substrate is disposed above a treatment box and a liquid adhesion enhancer is disposed below the treatment box. A method of treating a substrate for forming a resist film, characterized in that the adhesion enhancer is vaporized by spraying an inert gas from above the liquid surface of the adhesion enhancer, and the vaporized vapor is adhered to the substrate. Is.

Effect According to the present invention, by the process of exposing the resist film forming substrate to the vaporization vapor of the adhesion enhancer, it reacts with the OH groups on the surface of the substrate and removes this, so that the resist film on the surface of the substrate is removed. The adhesion strength increases.

Embodiment 1 FIG. 1 is a schematic diagram of a processing apparatus used in an embodiment of the present invention, in which a silicon substrate 12 to be processed is placed in a cassette in a processing box 11 and a gas is provided below the silicon substrate 12. An inert gas is supplied while being metered by a flow meter 14 through a pipe 13 provided with a hole for blowing out. The adhesion strengthening agent 15 is placed in a dish-shaped container 16. With this processor,
An inert gas is applied to an adhesion-strengthening agent to vaporize it, and the vapor is applied to a silicon substrate to react with OH groups on the surface of the substrate to perform adhesion-strengthening treatment.

Thermal oxide film 6000 on silicon surface in semiconductor manufacturing process
An experiment was performed using a substrate on which Å was formed. After processing this substrate using the apparatus shown in FIG. 1, a positive photoresist was applied. As the treatment conditions, hexamethyldisilazane was used as the adhesion enhancer and N ₂ = 2 l / min was used as the inert gas, and the treatment was performed for 10 to 20 minutes.

Next, a semiconductor circuit pattern was baked using an aligner, and development and post-baking were performed. For the etching, the thermosetting film was etched using hydrofluoric acid (HF). as a result,
In the conventional spinner-treated pattern, bleeding immediately below the opening pattern generated during etching was observed, but in the case of the processing of this example, bleeding just below the opening pattern did not occur, and the effect is remarkable. there were.

Example 2 The same method as in Example 1 was used to perform an experiment using a silicon substrate on which a silicon nitride film, a polysilicon film, an aluminum film, etc. were adhered. As a result, no bleeding occurred in etching by any method, and the effect was remarkable.

EFFECTS OF THE INVENTION According to the present invention, the treatment of exposing the resist film forming substrate to the vaporization vapor of the adhesion enhancer significantly increases the adhesion strength of the resist film to the substrate, and the resist film is used as an etching mask. The accuracy of the pattern can be improved by the etching process of the formed substrate.

Further, as shown in FIG. 1, according to the present invention, the adhesion strengthening agent is vaporized by spraying an inert gas from above the liquid surface of the adhesion strengthening agent, so that vapor is always stably generated. Can be generated, and the film thickness of the resist film becomes more uniform.

[Brief description of drawings]

FIG. 1 is a schematic diagram of a processing apparatus used in an embodiment of the present invention, and FIG. 2 is a schematic explanatory diagram of a conventional example apparatus. 11 …… Processing box, 12 …… Processed silicon substrate, 13
…… Pipe, 14 …… Flowmeter, 15 …… Adhesion enhancer, 16 ……
A dish-shaped container.

Claims (1)

[Claims] 1. A substrate is arranged above a processing box,
And a method for treating a resist film forming substrate using a treatment device in which a liquid adhesion enhancer is disposed below the treatment box, wherein an inert gas is applied from above the liquid surface of the adhesion enhancer. A method for treating a substrate for forming a resist film, which comprises a step of vaporizing the adhesion strengthening agent by spraying and adhering the vaporized vapor to the substrate.